2016 IEEE International Electron Devices Meeting (IEDM)

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2016 IEEE International Electron Devices Meeting (IEDM)
 

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PreviewAuthor(s)TitleTypeIssue Date
1Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor On the subthreshold drain current sweep hysteresis of 4H-SiC nMOSFETsKonferenzbeitrag Inproceedings2016
2Karner, M ; Baumgartner, Oskar ; Stanojevic, Zlatan ; Schanovsky, Franz ; Strof, G ; Kernstock, Christian ; Karner, H.W. ; Rzepa, Gerhard ; Grasser, Tibor Vertically stacked nanowire MOSFETs for sub-10nm nodes: Advanced topography, device, variability, and reliability simulationsKonferenzbeitrag Inproceedings 2016