European Solid-State Device Research Conference (ESSDERC)

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Description

Event name
European Solid-State Device Research Conference (ESSDERC)
 
Event type
Event for scientific audience
 
Start date
16-09-1991
End date
19-09-1991
 
Location
Montreux
Country
Austria
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

Filter:
Author:  Grasser, T.

Results 1-11 of 11 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Sharma, Prateek ; Tyaginov, Stanislav ; Rauch, Stewart E. ; Franco, Jacopo ; Kaczer, Ben ; Makarov, Alexander ; Vexler, Mikhail I. ; Grasser, Tibor A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETsKonferenzbeitrag Inproceedings 2016
2Hehenberger, Philipp Paul ; Wagner, Paul-Jürgen ; Reisinger, H. ; Grasser, Tibor Comparison of Fast Measurement Methods for Short-Term Negative Bias Temperature Stress and RelaxationKonferenzbeitrag Inproceedings2009
3Gerrer, Louis ; Hussin, Razaidi ; Amoroso, Salvatore M. ; Franco, J. ; Weckx, P. ; Simicic, M. ; Horiguchi, N. ; Kaczer, Ben ; Grasser, T. ; Asenov, Asen Experimental evidences and simulations of trap generation along a percolation pathKonferenzbeitrag Inproceedings2015
4Puschkarsky, Katja ; Reisinger, H. ; Schlünder, C. ; Gustin, W. ; Grasser, Tibor Fast Acquisition of Activation Energy Maps Using Temperature Ramps for Lifetime Modeling of BTIKonferenzbeitrag Inproceedings 2018
5Tyaginov, S. E. ; Starkov, Ivan ; Jungemann, C. ; Enichlmair, H. ; Park, Jong Mun ; Grasser, Tibor Impact of the Carrier Distribution Function on Hot-Carrier Degradation ModelingKonferenzbeitrag Inproceedings2011
6Illarionov, Yury ; Waltl, Michael ; Smith, Anderson ; Vaziri, Sam ; Ostling, Mikael ; Lemme, Max ; Grasser, Tibor Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistorsKonferenzbeitrag Inproceedings2015
7Grasser, Tibor ; Kaczer, Ben Negative Bias Temperature Instability: Recoverable versus Permanent DegradationKonferenzbeitrag Inproceedings2007
8Stradiotto, Roberta ; Pobegen, Gregor ; Ostermaier, Clemens ; Grasser, Tibor On The Fly Characterization of Charge Trapping Phenomena at GaN/Dielectric and GaN/AlGaN/Dielectric Interfaces Using Impedance MeasurementsKonferenzbeitrag Inproceedings2015
9Knobloch, Theresia ; Rzepa, Gerhard ; Illarionov, Yury ; Waltl, Michael ; Schanovsky, Franz ; Jech, Markus ; Stampfer, Bernhard ; Furchi, Marco Mercurio ; Müller, Thomas ; Grasser, Tibor Physical modeling of the hysteresis in M0S2 transistorsKonferenzbeitrag Inproceedings 2017
10Makarov, Alexander ; Kaczer, Ben ; Roussel, Philippe ; Chasin, A ; Vandemaele, Michiel ; Hellings, Geert ; El-Sayed, Al-Moatasem ; Jech, Markus ; Grasser, Tibor ; Linten, D ; Tyaginov, S. E. Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random DopantsKonferenzbeitrag Inproceedings 2019
11Kaczer, B. ; Franco, J. ; Weckx, P. ; Roussel, Ph. J. ; Bury, E. ; Cho, M. ; Degraeve, R. ; Linten, D. ; Groeseneken, G. ; Kukner, H. ; Raghavan, P. ; Catthoor, F. ; Rzepa, G. ; Goes, W. ; Grasser, T. The defect-centric perspective of device and circuit reliability — From individual defects to circuitsKonferenzbeitrag Inproceedings2015