IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

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Journal description

Title Titel
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
 
e-ISSN
1937-4151
 
ISSN
0278-0070
 
Publisher Herausgeber
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Publisher's Address Herausgeber Adresse
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

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Author:  Selberherr, Siegfried

Results 1-15 of 15 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Kosina, H. ; Selberherr, S. A Hybrid Device Simulator that Combines Monte Carlo and Drift-Diffusion AnalysisArtikel Article1994
2Strasser, E. ; Selberherr, S. Algorithms and Models for Cellular Based Topography SimulationArtikel Article1995
3Schütz, A. ; Selberherr, Siegfried ; Pötzl, Hans Analysis of Breakdown Phenomena in MOSFET'sArtikel Article 1982
4Wessner, Wilfried ; Cervenka, Johann ; Heitzinger, Clemens ; Hossinger, Andreas ; Selberherr, Siegfried Anisotropic Mesh Refinement for the Simulation of Three-Dimensional Semiconductor Manufacturing ProcessesArtikel Article 2006
5Nanz, G. ; Dickinger, P. ; Selberherr, S. Calculation of Contact Currents in Device SimulationArtikel Article1992
6Cervenka, J. ; Wessner, W. ; Al-Ani, E. ; Grasser, T. ; Selberherr, S. Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential EquationsArtikel Article 2006
7Selberherr, S. ; Ringhofer, C.A. Implications of Analytical Investigations about the Semiconductor Equations on Device Modeling ProgramsArtikel Article1984
8Heitzinger, Clemens ; Sheikholeslami, Alireza ; Park, Jong Mun ; Selberherr, Siegfried A Method for Generating Structurally Aligned Grids for Semiconductor Device SimulationArtikel Article 2005
9Hobler, G. ; Selberherr, S. Monte Carlo Simulation of Ion Implantation into Two- and Three-Dimensional StructuresArtikel Article1989
10Thurner, M. ; Lindorfer, P. ; Selberherr, S. Numerical Treatment of Nonrectangular Field-Oxide for 3-D MOSFET SimulationArtikel Article1990
11Pichler, P. ; Jüngling, Werner ; Selberherr, Siegfried ; Guerrero, E. ; Pötzl, Hans Simulation of Critical IC-Fabrication StepsArtikel Article 1985
12Thurner, M. ; Selberherr, S. Three-Dimensional Effects Due to the Field Oxide in MOS Devices Analyzed with MINIMOS 5Artikel Article1990
13Hobler, G. ; Selberherr, S. Two-Dimensional Modeling of Ion Implantation Induced Point DefectsArtikel Article1988
14Fasching, F. ; Tuppa, W. ; Selberherr, S. VISTA - The Data LevelArtikel Article1994
15Halama, S. ; Pichler, C. ; Rieger, G. ; Schrom, G. ; Simlinger, T. ; Selberherr, S. VISTA - User Interface, Task Level, and Tool IntegrationArtikel Article1995