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| | Preview | Author(s) | Title | Type | Issue Date |
| 1 | | Aichinger, T. ; Nelhiebel, M. ; Grasser, Tibor | A Combined Study of p- and n-Channel MOS Devices to Investigate the Energetic Distribution of Oxide Traps After NBTI | Artikel Article | 2009 |
| 2 | | Vasicek, Martin ; Cervenka, Johann ; Esseni, David ; Palestri, Pierpaolo ; Grasser, Tibor | Applicability of Macroscopic Transport Models to Decananometer MOSFETs | Artikel Article | 2012 |
| 3 | | Ruch, Bernhard ; Jech, Markus ; Pobegen, Gregor ; Grasser, Tibor | Applicability of Shockley-Read-Hall Theory for Interface States | Artikel Article  | 2021 |
| 4 | | Stradiotto, Roberta ; Pobegen, Gregor ; Ostermaier, Clemens ; Waltl, Michael ; Grill, Alexander ; Grasser, Tibor | Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs | Artikel Article | 2017 |
| 5 | | Puschkarsky, Katja ; Reisinger, Hans ; Rott, Gunnar Andreas ; Schlünder, Christian ; Gustin, Wolfgang ; Grasser, Tibor | An Efficient Analog Compact NBTI Model for Stress and Recovery Based on Activation Energy Maps | Artikel Article | 2019 |
| 6 | | Michl, Jakob ; Grill, Alexander ; Waldhoer, Dominic ; Goes, Wolfgang ; Kaczer, Ben ; Linten, Dimitri ; Parvais, Bertrand ; Govoreanu, Bogdan ; Radu, Iuliana ; Waltl, Michael ; Grasser, Tibor | Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory | Artikel Article | 2021 |
| 7 | | Michl, Jakob ; Grill, Alexander ; Waldhoer, Dominic ; Goes, Wolfgang ; Kaczer, Ben ; Linten, Dimitri ; Parvais, Bertrand ; Govoreanu, Bogdan ; Radu, Iuliana ; Grasser, Tibor ; Waltl, Michael | Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: Experimental | Artikel Article | 2021 |
| 8 | | Grasser, Tibor ; Kaczer, Ben | Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs | Artikel Article | 2009 |
| 9 | | Illarionov, Yury ; Bina, Markus ; Tyaginov, Stanislav ; Rott, Karina ; Kaczer, Ben ; Reisinger, Hans ; Grasser, Tibor | Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs | Artikel Article | 2015 |
| 10 | | Jungemann, C. ; Grasser, Tibor ; Neinhüs, Burkhard ; Meinerzhagen, Bernd | Failure of Moments-Based Transport Models in Nanoscale Devices Near Equilibrium | Artikel Article | 2005 |
| 11 | | Dhar, Siddhartha ; Kosina, Hans ; Karlowatz, Gerhard ; Ungersboeck, Stephan Enzo ; Grasser, Tibor ; Selberherr, Siegfried | High-Field Electron Mobility Model for Strained-Silicon Devices | Artikel Article | 2006 |
| 12 | | Illarionov, Yury ; Smith, Anderson ; Vaziri, Sam ; Ostling, Mikael ; Mueller, Thomas ; Lemme, Max ; Grasser, Tibor | Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences | Artikel Article | 2015 |
| 13 | | Ullmann, Bianka ; Jech, Markus ; Puschkarsky, Katja ; Rott, Gunnar Andreas ; Waltl, Michael ; Illarionov, Yury ; Reisinger, Hans ; Grasser, Tibor | Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: Experimental | Artikel Article | 2019 |
| 14 | | Jech, Markus ; Ullmann, Bianka ; Rzepa, Gerhard ; Tyaginov, Stanislav ; Grill, Alexander ; Waltl, Michael ; Jabs, Dominic ; Jungemann, Christoph ; Grasser, Tibor | Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory | Artikel Article | 2019 |
| 15 | | Ruch, Bernhard ; Pobegen, Gregor ; Grasser, Tibor | Investigation of the Temperature Dependence of Hot-Carrier Degradation in Si MOSFETs Using Spectroscopic Charge Pumping | Artikel Article | 2020 |
| 16 | | Ruch, Bernhard ; Pobegen, Gregor ; Grasser, Tibor | Localizing Hot-Carrier Degradation in Silicon Trench MOSFETs | Artikel Article | 2021 |
| 17 | | Jech, Markus ; Rott, Gunnar ; Reisinger, Hans ; Tyaginov, Stanislav ; Rzepa, Gerhard ; Grill, Alexander ; Jabs, Dominic ; Jungemann, Christoph ; Waltl, Michael ; Grasser, Tibor | Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities | Artikel Article | Aug-2020 |
| 18 | | Sharma, Prateek ; Tyaginov, S. E. ; Wimmer, Yannick ; Rudolf, Florian ; Rupp, Karl ; Bina, Markus ; Enichlmair, H. ; Park, J.M. ; Minixhofer, R. ; Ceric, Hajdin ; Grasser, Tibor | Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation | Artikel Article | 2015 |
| 19 | | Giering, K.-U. ; Puschkarsky, K. ; Reisinger, H. ; Rzepa, G. ; Rott, G. ; Vollertsen, R. ; Grasser, T. ; Jancke, R. | NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling | Artikel Article | 2019 |
| 20 | | Grasser, Tibor ; Rott, Karina ; Reisinger, Hans ; Waltl, Michael ; Schanovsky, Franz ; Kaczer, Ben | NBTI in Nanoscale MOSFETs-The Ultimate Modeling Benchmark | Artikel Article | 2014 |
