IEEE Transactions on Electron Devices

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Journal description

Title Titel
IEEE Transactions on Electron Devices
 
e-ISSN
1557-9646
 
ISSN
0018-9383
 
Publisher Herausgeber
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Publisher's Address Herausgeber Adresse
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

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Author:  Pobegen, Gregor

Results 1-9 of 9 (Search time: 0.004 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Ruch, Bernhard ; Jech, Markus ; Pobegen, Gregor ; Grasser, Tibor Applicability of Shockley-Read-Hall Theory for Interface StatesArtikel Article 2021
2Stradiotto, Roberta ; Pobegen, Gregor ; Ostermaier, Clemens ; Waltl, Michael ; Grill, Alexander ; Grasser, Tibor Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTsArtikel Article 2017
3Koller, Christian ; Pobegen, Gregor ; Ostermaier, Clemens ; Pogany, Dionyz Effect of carbon doping on charging/discharging dynamics and leakage behavior of carbon-doped GaNArtikel Article 2018
4Ruch, Bernhard ; Pobegen, Gregor ; Grasser, Tibor Investigation of the Temperature Dependence of Hot-Carrier Degradation in Si MOSFETs Using Spectroscopic Charge PumpingArtikel Article 2020
5Ruch, Bernhard ; Pobegen, Gregor ; Grasser, Tibor Localizing Hot-Carrier Degradation in Silicon Trench MOSFETsArtikel Article 2021
6Butej, Boris ; Padovan, Valeria ; Pogany, Dionyz ; Pobegen, Gregor ; Ostermaier, Clemens ; Koller, Christian Method to Distinguish Between Buffer and Surface Trapping in Stressed Normally-ON GaN GITs Using the Gate-Voltage Dependence of Recovery Time ConstantsArtikel Article 2022
7Berens, Judith ; Pobegen, Gregor ; Rescher, Gerald ; Aichinger, Thomas ; Grasser, Tibor NH₃ and NO + NH₃ Annealing of 4H-SiC Trench MOSFETs: Device Performance and ReliabilityArtikel Article 2019
8Pobegen, Gregor ; Grasser, Tibor On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time ScaleArtikel Article2013
9Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement TechniqueArtikel Article 2018