IEEE Transactions on Electron Devices

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Journal description

Title Titel
IEEE Transactions on Electron Devices
 
e-ISSN
1557-9646
 
ISSN
0018-9383
 
Publisher Herausgeber
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Publisher's Address Herausgeber Adresse
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

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Date Issued:  [1900 TO 1999]

Results 1-12 of 12 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Abramo, A. ; Baudry, L. ; Brunetti, R. ; Castagne, R. ; Charef, M. ; Dessene, F. ; Dollfus, P. ; Dutton, R. ; Engl, W.L. ; Fauquembergue, R. ; Fiegna, C. ; Fischetti, M.V. ; Galdin, S. ; Goldsman, N. ; Hackel, Michael ; Hamaguchi, C. ; Hess, K. ; Hennacy, K. ; Hesto, P. ; Higman, J.M. ; Iizuka, T. ; Jungemann, C. ; Kamakura, Y. ; Kosina, Hans ; Kunikiyo, T. ; Laux, S.E. ; Lin, H. ; Maziar, C. ; Mizuno, H. ; Peifer, H.J. ; Ramaswamy, S. ; Sano, N. ; Scrobohaci, P.G. ; Selberherr, Siegfried ; Takenaka, M. ; Tang, T.-W. ; Taniguchi, K. ; Thobel, J.L. ; Thoma, R. ; Tomizawa, K. ; Tomizawa, M. ; Vogelsang, T. ; Wang, S.-L. ; Wang, X ; Yao, C.-S. ; Yoder, P.D. ; Yoshii, A. A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport SiliconArtikel Article 1994
2Machek, J. ; Selberherr, S. A Novel Finite-Element Approach to Device ModelingArtikel Article1983
3Markowich, P.A. ; Ringhofer, C.A. ; Selberherr, S. ; Lentini, M. A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor EquationsArtikel Article1983
4Puchner, H. ; Selberherr, S. An Advanced Model for Dopant Diffusion in PolysiliconArtikel Article1995
5Franz, A.F. ; Franz, G.A. ; Selberherr, S. ; Ringhofer, C. ; Markowich, P. Finite Boxes - A Generalization of the Finite Difference Method Suitable for Semiconductor Device SimulationArtikel Article 1983
6Habas, P. ; Faricelli, J.V. Investigation of the Physical Modeling of the Gate-Depletion EffectArtikel Article1992
7Selberherr, Siegfried ; Schütz, A. ; Pötzl, Hans MINIMOS - A Two-Dimensional MOS Transistor AnalyzerArtikel Article 1980
8Hänsch, W. ; Selberherr, Siegfried MINIMOS 3: A MOSFET Simulator that Includes Energy BalanceArtikel Article 1987
9Selberherr, S. MOS Device Modeling at 77KArtikel Article1989
10Jüngling, Werner ; Pichler, P. ; Selberherr, Siegfried ; Guerrero, E. ; Pötzl, Hans Simulation of Critical IC Fabrication Processes Using Advanced Physical and Numerical MethodsArtikel Article 1985
11Pichler, P. ; Jüngling, Werner ; Selberherr, Siegfried ; Guerrero, E. ; Pötzl, Hans Simulation of Critical IC-Fabrication StepsArtikel Article 1985
12Brand, H. ; Selberherr, S. Two-Dimensional Simulation of Thermal Runaway in a Nonplanar GTO-ThyristorArtikel Article1995