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| | Preview | Author(s) | Title | Type | Issue Date |
| 41 | | Lorenz, J. ; Bär, E. ; Clees, T. ; Evanschitzky, P. ; Jancke, Roland ; Kampen, C. ; Paschen, U. ; Salzig, C. ; Selberherr, Siegfried | Hierarchical Simulation of Process Variations and Their Impact on Circuits and Systems: Results | Artikel Article  | 16-Jun-2011 |
| 42 | | Schmid, U. ; Sheppard, S.T. ; Wondrak, W. | High Temperature Performance of NMOS Integrated Inverters and Ring Oscillators in 6HSiC | Artikel Article | 2000 |
| 43 | | Dhar, Siddhartha ; Kosina, Hans ; Karlowatz, Gerhard ; Ungersboeck, Stephan Enzo ; Grasser, Tibor ; Selberherr, Siegfried | High-Field Electron Mobility Model for Strained-Silicon Devices | Artikel Article | 2006 |
| 44 | | Illarionov, Yury ; Smith, Anderson ; Vaziri, Sam ; Ostling, Mikael ; Mueller, Thomas ; Lemme, Max ; Grasser, Tibor | Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences | Artikel Article | 2015 |
| 45 | | Tapajna, Milan ; Killat, Nicole ; Palankovski, Vassil ; Gregusova, Dagmar ; Cico, Karol ; Carlin, Jean-Francois ; Grandjean, Nicolas ; Kuball, Martin ; Kuzmik, Jan | Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors | Artikel Article | 2014 |
| 46 | | Ullmann, Bianka ; Jech, Markus ; Puschkarsky, Katja ; Rott, Gunnar Andreas ; Waltl, Michael ; Illarionov, Yury ; Reisinger, Hans ; Grasser, Tibor | Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: Experimental | Artikel Article | 2019 |
| 47 | | Jech, Markus ; Ullmann, Bianka ; Rzepa, Gerhard ; Tyaginov, Stanislav ; Grill, Alexander ; Waltl, Michael ; Jabs, Dominic ; Jungemann, Christoph ; Grasser, Tibor | Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory | Artikel Article | 2019 |
| 48 | | Wang, L. ; Brown, A.R. ; Nedjalkov, Mihail ; Alexander, Craig ; Cheng, B. ; Millar, C. ; Asenov, A | Impact of Self-Heating on the Statistical Variability in Bulk and SOI FinFETs | Artikel Article | 2015 |
| 49 | | Kuzmik, Jan ; Kostopoulos, T ; Konstantinidis, G. ; Carlin, J.-F ; Georgakilas, A ; Pogany, Dionyz | InAlN/GaN HEMTs: A first insight into technological optimization | Artikel Article | 2006 |
| 50 | | Habas, P. ; Faricelli, J.V. | Investigation of the Physical Modeling of the Gate-Depletion Effect | Artikel Article | 1992 |
| 51 | | Ruch, Bernhard ; Pobegen, Gregor ; Grasser, Tibor | Investigation of the Temperature Dependence of Hot-Carrier Degradation in Si MOSFETs Using Spectroscopic Charge Pumping | Artikel Article | 2020 |
| 52 | | Ruch, Bernhard ; Pobegen, Gregor ; Grasser, Tibor | Localizing Hot-Carrier Degradation in Silicon Trench MOSFETs | Artikel Article | 2021 |
| 53 | | Pogany, D. ; Johnsson, D. ; Bychikhin, S. ; Esmark, K. ; Rodin, P. ; Stecher, M. ; Gornik, E. ; Gossner, H. | Measuring Holding Voltage Related to Homogeneous Current Flow in Wide ESD Protection Structures Using Multilevel TLP | Artikel Article | 2011 |
| 54 | | Butej, Boris ; Padovan, Valeria ; Pogany, Dionyz ; Pobegen, Gregor ; Ostermaier, Clemens ; Koller, Christian | Method to Distinguish Between Buffer and Surface Trapping in Stressed Normally-ON GaN GITs Using the Gate-Voltage Dependence of Recovery Time Constants | Artikel Article | 2022 |
| 55 | | Selberherr, Siegfried ; Schütz, A. ; Pötzl, Hans | MINIMOS - A Two-Dimensional MOS Transistor Analyzer | Artikel Article | 1980 |
| 56 | | Hänsch, W. ; Selberherr, Siegfried | MINIMOS 3: A MOSFET Simulator that Includes Energy Balance | Artikel Article | 1987 |
| 57 | | Jech, Markus ; Rott, Gunnar ; Reisinger, Hans ; Tyaginov, Stanislav ; Rzepa, Gerhard ; Grill, Alexander ; Jabs, Dominic ; Jungemann, Christoph ; Waltl, Michael ; Grasser, Tibor | Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities | Artikel Article | Aug-2020 |
| 58 | | Sharma, Prateek ; Tyaginov, S. E. ; Wimmer, Yannick ; Rudolf, Florian ; Rupp, Karl ; Bina, Markus ; Enichlmair, H. ; Park, J.M. ; Minixhofer, R. ; Ceric, Hajdin ; Grasser, Tibor | Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation | Artikel Article | 2015 |
| 59 | | Raleva, K. ; Vasileska, Dragica ; Goodnick, S.M. ; Nedjalkov, Mihail | Modeling Thermal Effects in Nanodevices | Artikel Article | 2008 |
| 60 | | Amoroso, Salvatore Maria ; Gerrer, Louis ; Nedjalkov, Mihail ; Hussin, Razaidi ; Alexander, Craig ; Asenov, Asen | Modelling Carriers Mobility in nano-MOSFETs in the Presence of Discrete Trapped Charges: Accuracy and Issues | Artikel Article | 2014 |
