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Full name Familienname, Vorname
Vitanov, Stanislav
 
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Results 1-20 of 34 (Search time: 0.007 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Vitanov, Stanislav ; Palankovski, Vassil ; Maroldt, S. ; Quay, Rüdiger ; Murad, S. ; Rödle, T. ; Selberherr, Siegfried Physics-Based Modeling of GaN HEMTsArtikel Article Mar-2012
2Kuzmik, Jan ; Vitanov, Stanislav ; Dua, Christian ; Carlin, Jean-Francois ; Ostermaier, Clemens ; Alexewicz, Alexander ; Strasser, Gottfried ; Pogany, Dionyz ; Gornik, Erich ; Grandjean, Nicolas ; Delage, Sylvain ; Palankovski, Vassil Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility TransistorsArtikel Article2012
3Aloise, Giulliano Rocco ; Vitanov, Stanislav ; Palankovski, Vassil Performance Study of Nitride-Based Gunn DiodesKonferenzbeitrag Inproceedings2011
4Aloise, Giulliano Rocco ; Vitanov, Stanislav ; Palankovski, Vassil Temperature Dependence of the Transport Properties of InNKonferenzbeitrag Inproceedings2011
5Vitanov, Stanislav ; Kuzmik, Jan ; Palankovski, Vassil Normally-off InAlN/GaN HEMTs with n<sup>++</sup> GaN cap layer: A simulation studyKonferenzbeitrag Inproceedings2011
6Vitanov, Stanislav ; Kuzmik, J. ; Palankovski, Vassil Study of the Conduction Properties of the n++ GaN Cap Layer in GaN/InAlN/GaN E-HEMTsKonferenzbeitrag Inproceedings2011
7Vitanov, Stanislav ; Palankovski, Vassil High-Temperature Small-Signal Analysis of AlGaN/GaN HEMTsKonferenzbeitrag Inproceedings 2010
8Vitanov, Stanislav ; Palankovski, Vassil Electron Mobility Models for III-NitridesKonferenzbeitrag Inproceedings2010
9Vitanov, Stanislav ; Palankovski, Vassil ; Maroldt, S. ; Quay, Rüdiger Non-Linearity of Transconductance and Source-Gate Resistance of HEMTsKonferenzbeitrag Inproceedings2010
10Vitanov, Stanislav ; Palankovski, Vassil ; Selberherr, Siegfried Hydrodynamic Models for GaN-Based HEMTsKonferenzbeitrag Inproceedings2010
11Vitanov, S. ; Palankovski, V. ; Maroldt, S. ; Quay, R. High-Temperature Modeling of AlGaN/GaN HEMTsArtikel Article2010
12Maroldt, S. ; Wiegner, Dirk ; Vitanov, Stanislav ; Palankovski, Vassil ; Quay, Rüdiger ; Ambacher, O. Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHzArtikel Article2010
13Vitanov Stanislav - 2010 - Simulation of high electron mobility transistors.pdf.jpgVitanov, Stanislav Simulation of high electron mobility transistorsThesis Hochschulschrift 2010
14Vitanov, Stanislav ; Palankovski, Vassil Influence of the Gate Recess on the Performance of Enhancement-Mode AlGaN/GaN HEMTsKonferenzbeitrag Inproceedings2009
15Vitanov, Stanislav ; Palankovski, Vassil ; Maroldt, S. ; Quay, Rüdiger A Simulation Study of Enhancement-Mode AlGaN/GaN HEMTs with Recessed GatesKonferenzbeitrag Inproceedings2009
16Vitanov, Stanislav ; Palankovski, Vassil ; Maroldt, Stephan ; Quay, Rudiger High-temperature modeling of AlGaN/GaN HEMTsKonferenzbeitrag Inproceedings2009
17Vitanov, Stanislav ; Palankovski, Vassil Enhancement Mode HEMTs: Evaluation of Two Approaches by Numerical SimulationKonferenzbeitrag Inproceedings 2008
18Vitanov, Stanislav ; Palankovski, Vassil Simulation of AlGaN/GaN HEMTs with InGaN Cap LayerKonferenzbeitrag Inproceedings2008
19Vitanov, S. ; Palankovski, V. Monte Carlo Study of Transport Properties of InNKonferenzbeitrag Inproceedings2008
20Vitanov, Stanislav ; Vitanov, P ; Palankovski, Vassil Two-Dimensional Numerical Optimization of MIS Solar Cell on N-Type SiliconKonferenzbeitrag Inproceedings2008