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Full name Familienname, Vorname
Zanoni, Enrico
 

Own Publications Eigene Publikationen

Results 1-10 of 10 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Meneghini, M ; Cibin, Giulia ; Bertin, Marco ; Carraro, S ; Marconi, S ; Marioli, M ; la Grassa, M ; Ferretti, M ; Bychikhin, Sergey ; Pogany, Dionyz ; Strasser, Gottfried ; Zanoni, Enrico ; Meneghesso, Gaudenzio Comparison of breakdown characteristics of AlGaN/GaN HEMTs in voltage and current controlled mode: electrical and optical characterizationPräsentation Presentation2013
2Meneghini, Matteo ; Zanandrea, Alberto ; Rampazzo, Fabiana ; Stocco, Antonio ; Bertin, Marco ; Cibin, Giulia ; Pogany, Dionyz ; Zanoni, Enrico ; Meneghesso, Gaudenzio Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown ConditionsArtikel Article2013
3Fleury, Clément ; Zhytnytska, Rimma ; Bychikhin, Sergey ; Cappriotti, Mattia ; Hilt, Oliver ; Visalli, Domenica ; Meneghesso, Gaudenzio ; Zanoni, Enrico ; Würfl, Joachim ; Derluyn, Joff ; Strasser, Gottfried ; Pogany, Dionyz Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applicationsArtikel Article2013
4Fleury, Clement ; Zhytnytska, Rimma ; Bychikhin, Sergey ; Cappriotti, Mattia ; Hilt, O ; Visalli, Domenica ; Meneghesso, Gaudenzio ; Zanoni, Enrico ; Würfl, Joachim ; Derluyn, Joff ; Strasser, Gottfried ; Pogany, Dionyz Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applicationsPräsentation Presentation2013
5Marko, Paul ; Alexewicz, Alexander ; Hilt, O ; Meneghesso, Gaudenzio ; Würfl, Joachim ; Zanoni, Enrico ; Strasser, Gottfried ; Pogany, Dionyz Random telegraph noise and bursts in reverse-bias-stressed AlGaN/GaN HEMTsKonferenzbeitrag Inproceedings2012
6Marko, Paul ; Alexewicz, Alexander ; Meneghini, M ; Meneghesso, Gaudenzio ; Zanoni, Enrico ; Hilt, O ; Würfl, Joachim ; Strasser, Gottfried ; Pogany, Dionyz Pre-breakdown current fluctuations and RTS noise in reverse-bias-stressed AlGaN/GaN HEMTsPräsentation Presentation2012
7Meneghesso, Gaudenzio ; Meneghini, M ; Zanandrea, A ; Rampazzo, Fabiana ; Stocco, Antonio ; Bertin, Marco ; Pogany, Dionyz ; Zanoni, Enrico Evidence for breakdown luminescence in AlGaN/GaN HEMTsPräsentation Presentation2012
8Marko, Paul ; Meneghini, M ; Bychikhin, Sergey ; Marcon, D ; Meneghesso, Gaudenzio ; Zanoni, Enrico ; Pogany, Dionyz IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistorsPräsentation Presentation2012
9Bychikhin, Sergey ; Vandamme, L.K.J. ; Kuzmik, Jan ; Meneghesso, Gaudenzio ; Levada, S ; Zanoni, Enrico ; Pogany, Dionyz Accelerated Aging of GaN Light Emitting Diodes Studied by 1/f and RTS NoiseKonferenzbeitrag Inproceedings2005
10Bychikhin, Sergey ; Vandamme, L.K.J. ; Pogany, Dionyz ; Meneghesso, Gaudenzio ; Zanoni, Enrico Low frequency noise sources in as-prepared and aged GaN-based light emitting diodesArtikel Article2005