Name Card

Full name Familienname, Vorname
Esseni, David
 

Own Publications Eigene Publikationen

Results 1-7 of 7 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Hosseini, Manouchehr ; Elahi, Mohammad ; Pourfath, Mahdi ; Esseni, David Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX₂ ( M = Mo, W ; X = S , Se)Artikel Article 2015
2Hosseini, Manouchehr ; Elahi, Mohammad ; Pourfath, Mahdi ; Esseni, David Strain Induced Mobility Modulation in Single-Layer MoS₂Artikel Article 2015
3Hosseini, Manouchehr ; Elahi, Mohammad ; Pourfath, Mahdi ; Esseni, David Very Large Strain Gauges Based on Single Layer MoSe₂ and WSe₂ for Sensing ApplicationsArtikel Article2015
4Vasicek, Martin ; Cervenka, Johann ; Esseni, David ; Palestri, Pierpaolo ; Grasser, Tibor Applicability of Macroscopic Transport Models to Decananometer MOSFETsArtikel Article2012
5Sangiorgi, Enrico ; Asenov, Asen ; Bennett, Herbert S. ; Dutton, Robert W. ; Esseni, David ; Giles, Martin D. ; Hane, Masami ; Nishi, Kenji ; Ranaweera, Jeewika ; Selberherr, Siegfried Foreword Special Issue on Characterization of Nano CMOS Variability by Simulation and MeasurementsArtikel Article2011
6Sverdlov, Viktor ; Baumgartner, Oskar ; Kosina, Hans ; Selberherr, Siegfried ; Schanovsky, Franz ; Esseni, David The Linear Combination of Bulk Bands-Method for Electron and Hole Subband Calculations in Strained Silicon Films and Surface LayersKonferenzbeitrag Inproceedings2009
7Sangiorgi, Enrico ; Asenov, Asen ; Bennett, Herbert S. ; Dutton, Robert W. ; Esseni, David ; Giles, Martin D. ; Hane, Masami ; Jungemann, Christoph ; Nishi, Kenji ; Selberherr, Siegfried ; Takagi, Shinichi Foreword Special Issue on Simulation and Modeling of Nanoelectronics DevicesArtikel Article2007