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Full name Familienname, Vorname
Bukhori, Muhammad Faiz
 

Own Publications Eigene Publikationen

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PreviewAuthor(s)TitleTypeIssue Date
1Franco, J. ; Kaczer, Ben ; Toledano-Luque, M. ; Bukhori, Muhammad Faiz ; Roussel, Ph. J. ; Grasser, Tibor ; Asenov, A ; Groeseneken, G. Impact of Individual Charged Gate-Oxide Defects on the Entire ID -VG Characteristic of Nanoscaled FETsArtikel Article2012
2Franco, J. ; Kaczer, Ben ; Toledano-Luque, M. ; Roussel, Ph. J. ; Mitard, J. ; Ragnarsson, L. A. ; Witters, L. ; Chiarella, T. ; Togo, M. ; Horiguchi, N. ; Groeseneken, G. ; Bukhori, Muhammad Faiz ; Grasser, Tibor ; Asenov, A Impact of Single Charged Gate Oxide Defects on the Performance and Scaling of Nanoscaled FETsKonferenzbeitrag Inproceedings2012
3Kaczer, Ben ; Franco, J. ; Toledano-Luque, M. ; Roussel, Ph. J. ; Bukhori, Muhammad Faiz ; Asenov, A ; Schwarz, Benedikt ; Bina, Markus ; Grasser, Tibor ; Groeseneken, G. The Relevance of Deeply-Scaled FET Threshold Voltage Shifts for Operation LifetimesKonferenzbeitrag Inproceedings2012
4Bukhori, Muhammad Faiz ; Grasser, Tibor ; Kaczer, Ben ; Reisinger, Hans. ; Asenov, Asen ‘Atomistic’ simulation of RTS amplitudes due to single and multiple charged defect states and their interactionsKonferenzbeitrag Inproceedings2010