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Full name Familienname, Vorname
Hoffmann, T. Y.
 

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PreviewAuthor(s)TitleTypeIssue Date
1Franco, J. ; Kaczer, B. ; Eneman, G. ; Roussel, Ph. J. ; Cho, M. ; Mitard, J. ; Witters, L. ; Hoffmann, T. Y. ; Groeseneken, G. ; Crupi, F. ; Grasser, T. On the recoverable and permanent components of Hot Carrier and NBTI in Si pMOSFETs and their implications in Si<inf>0.45</inf>Ge<inf>0.55</inf> pMOSFETsKonferenzbeitrag Inproceedings2011
2Franco, J. ; Kaczer, Ben ; Toledano-Luque, M. ; Roussel, Ph. J. ; Hehenberger, Philipp Paul ; Grasser, Tibor ; Mitard, J. ; Eneman, G. ; Witters, L. ; Hoffmann, T. Y. ; Groeseneken, G. On the impact of the Si passivation layer thickness on the NBTI of nanoscaled Si0.45Ge0.55 pMOSFETsArtikel Article 2011