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Waldron, N.

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		Preview	Author(s)	Title	Type	Issue Date
	1		Franco, J. ; Putcha, V. ; Vais, A. ; Sioncke, S. ; Waldron, N. ; Zhou, D. ; Rzepa, G. ; Roussel, Ph. J. ; Groeseneken, G. ; Heyns, M. ; Collaert, N. ; Linten, D. ; Grasser, T. ; Kaczer, B.	Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs (invited)	Konferenzbeitrag Inproceedings	2017
	2		Franco, J. ; Kaczer, B. ; Waldron, N. ; Roussel, Ph.J. ; Alian, A. ; Pourghaderi, M. A. ; Ji, Z. ; Grasser, T. ; Kauerauf, T. ; Sioncke, S. ; Collaert, N. ; Thean, A. ; Groeseneken, G.	RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs	Konferenzbeitrag Inproceedings	2014