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Bahat-Treidel, E.
 

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PreviewAuthor(s)TitleTypeIssue Date
1Meneghini, M. ; Hilt, O. ; Fleury, C. ; Silvestri, R. ; Capriotti, M. ; Strasser, G. ; Pogany, D. ; Bahat-Treidel, E. ; Brunner, F. ; Knauer, A. ; Würfl, J. ; Rossetto, I. ; Zanoni, E. ; Meneghesso, G. ; Dalcanale, S. Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate-stress and ESD failureArtikel Article 2016
2Capriotti, M ; Bahat-Treidel, E. ; Fleury, Clement ; Bethge, Ole ; Brunner, Frank ; Hilt, O ; Würfl, Joachim ; Pogany, Dionyz ; Strasser, Gottfried High performances normally-off AlGaN/GaN True-MOS with sub-micrometric gate featuresPräsentation Presentation2015