Wissenschaftliche Artikel

Vitanov, S., Palankovski, V., Maroldt, S., Quay, R., Murad, S., Rödle, T., & Selberherr, S. (2012). Physics-Based Modeling of GaN HEMTs. IEEE Transactions on Electron Devices, 59(3), 685–693. https://doi.org/10.1109/ted.2011.2179118 ( reposiTUm)
Vitanov, S., Palankovski, V., Maroldt, S., & Quay, R. (2010). High-Temperature Modeling of AlGaN/GaN HEMTs. Solid-State Electronics, 54(10), 1105–1112. https://doi.org/10.1016/j.sse.2010.05.026 ( reposiTUm)
Maroldt, S., Wiegner, D., Vitanov, S., Palankovski, V., Quay, R., & Ambacher, O. (2010). Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz. IEICE Transactions on Electronics, E93-C(8), 1238–1244. http://hdl.handle.net/20.500.12708/167178 ( reposiTUm)

Beiträge in Tagungsbänden

Vitanov, S., Palankovski, V., Maroldt, S., & Quay, R. (2010). Non-Linearity of Transconductance and Source-Gate Resistance of HEMTs. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (p. 4). http://hdl.handle.net/20.500.12708/71691 ( reposiTUm)
Vitanov, S., Palankovski, V., Maroldt, S., & Quay, R. (2009). A Simulation Study of Enhancement-Mode AlGaN/GaN HEMTs with Recessed Gates. In HETECH 2009 Book of Abstracts (pp. 109–110). http://hdl.handle.net/20.500.12708/71069 ( reposiTUm)
Vitanov, S., Palankovski, V., Maroldt, S., & Quay, R. (2009). High-temperature modeling of AlGaN/GaN HEMTs. In 2009 International Semiconductor Device Research Symposium. International Semiconductor Device Research Symposium (ISDRS), College Park, MD, USA, Non-EU. https://doi.org/10.1109/isdrs.2009.5378300 ( reposiTUm)
Vitanov, S., Palankovski, V., Pozzovivo, G., Kuzmik, J., & Quay, R. (2008). Systematical Study of InAlN/GaN Devices by Numerical Simulation. In HETECH 2008 Book of Abstracts (pp. 159–160). http://hdl.handle.net/20.500.12708/70461 ( reposiTUm)
Vitanov, S., Palankovski, V., Murad, S., Rödle, T., Quay, R., & Selberherr, S. (2007). Predictive Simulation of AlGaN/GaN HEMTs. In 2007 IEEE Compound Semiconductor Integrated Circuits Symposium. IEEE Compound Semiconductor IC Symposium (CSICS), San Antonio, Non-EU. https://doi.org/10.1109/csics07.2007.31 ( reposiTUm)
Vitanov, S., Palankovski, V., Murad, S., Rödle, T., Quay, R., & Selberherr, S. (2007). Hydrodynamic Modeling of AlGaN/GaN HEMTs. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 273–276). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_65 ( reposiTUm)
Vitanov, S., Palankovski, V., Quay, R., & Langer, E. (2007). Modeling of Electron Transport in GaN-Based Materials and Devices. In AIP Conference Proceedings, Vol. 893 (pp. 1399–1400). American Institute of Physics. http://hdl.handle.net/20.500.12708/176121 ( reposiTUm)
Vitanov, S., Palankovski, V., Quay, R., & Langer, E. (2007). Modeling of Electron Transport in GaN-based Materials and Devices. In 28#^{th} International Conference on the Physics of Semiconductors (p. 244). http://hdl.handle.net/20.500.12708/69307 ( reposiTUm)
Schuberth, C., Arthaber, H., Mayer, M., Magerl, G., Quay, R., & Van Raay, F. (2006). Load Pull Characterization of GaN/AlGaN HEMTs. In 2006 INMMIC Proceedings (p. 3). http://hdl.handle.net/20.500.12708/69155 ( reposiTUm)
Vitanov, S., Palankovski, V., Quay, R., & Langer, E. (2006). Two-Dimensional Numerical Simulation of AlGaN/GaN HEMTs. In TARGET Days 2006 Book of Proceedings (pp. 81–84). http://hdl.handle.net/20.500.12708/69308 ( reposiTUm)
Palankovski, V., Vitanov, S., & Quay, R. (2006). Field-Plate Optimization of AlGaN/GaN HEMTs. In 2006 IEEE Compound Semiconductor Integrated Circuit Symposium. IEEE Compound Semiconductor IC Symposium (CSICS), San Antonio, Non-EU. https://doi.org/10.1109/csics.2006.319926 ( reposiTUm)
O´Droma, M., Goacher, A. A., Aschbacher, E., Bertran, E., Colantonio, P., Donati Guerrieri, S., Filicori, F., Gadringer, M., Luger, J., Meazza, A., Olavsbraten, M., Portilla, J., Quay, R., Zhu, A., Aamo, K., Berenguer, J., Camarchia, V., Carpenzano, N., Casas, F. J., … Magerl, G. (2006). RF Power Amplifier Linearisation - an Overview. In Target Days 2006, Book of Proceedings (pp. 9–12). http://hdl.handle.net/20.500.12708/69448 ( reposiTUm)
Quay, R., Würfl, J., Wiegner, D., Fischer, G., Schuberth, C., & Magerl, G. (2005). GaN/AlGaN HEMTs for Highly Linear Communication Applications in L-Frequency band. In GigaHertz 2005 (p. 4). http://hdl.handle.net/20.500.12708/69157 ( reposiTUm)

Bücher

Gallium Nitride Electronics. (2008). In R. Quay (Ed.), Springer Series in Materials Science. Springer-Verlag, Berlin-Heidelberg. https://doi.org/10.1007/978-3-540-71892-5 ( reposiTUm)

Hochschulschriften

Quay, R. (2009). Gallium nitride electronics [Professorial Dissertation, Technische Universität Wien]. reposiTUm. http://hdl.handle.net/20.500.12708/177799 ( reposiTUm)
Quay, R. (2001). Analysis and simulation of high electron mobility transistors [Dissertation, Technische Universität Wien]. reposiTUm. https://doi.org/10.34726/hss.2001.03341873 ( reposiTUm)