Bradley, R. M., & Hobler, G. (2023). Sputter yields of surfaces with nanoscale textures: Analytical results and Monte Carlo simulations. Journal of Applied Physics, 133(6), 065303. https://doi.org/10.1063/5.0137324 ( reposiTUm)

Balden, M., Schlueter, K., Dhard, D., Bauer, P., Nilsson, R., Granberg, F., Nordlund, K., & Hobler, G. (2023). Crystal-orientation-dependent physical sputtering from four elemental metals. Nuclear Materials and Energy, 37, Article 101559. https://doi.org/10.1016/j.nme.2023.101559 ( reposiTUm)

Wilhelm, R. A., Deuzeman, M. J., Rai, S., Husinsky, W., Szabo, P. S., Biber, H. A., Stadlmayr, R., Cupak, C., Hundsbichler, J., Lemell, C., Möller, W., Mutzke, A., Hobler, G., Versolato, O. O., Aumayr, F., & Hoekstra, R. (2023). On the missing single collision peak in low energy heavy ion scattering. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 544, Article 165123. https://doi.org/10.1016/j.nimb.2023.165123 ( reposiTUm)

Titze, M., Poplawsky, J. D., Kretschmer, S., Krasheninnikov, A. V., Doyle, B. L., Bielejec, E. S., Hobler, G., & Belianinov, A. (2023). Measurement and Simulation of Ultra-Low-Energy Ion–Solid Interaction Dynamics. Micromachines, 14(10), 1884. https://doi.org/10.3390/mi14101884 ( reposiTUm)

Höflich, K., Hobler, G., Allen, F. I., Wirtz, T., Rius, G., McElwee-White, L., Krasheninnikov, A. V., Schmidt, M., Utke, I., Klingner, N., Osenberg, M., Córdoba, R., Djurabekova, F., Manke, I., Moll, P., Manoccio, M., de Teresa, J. M., Bischoff, L., Michler, J., … Hlawacek, G. (2023). Roadmap for focused ion beam technologies. Applied Physics Reviews, 10(4), 1–93. https://doi.org/10.1063/5.0162597 ( reposiTUm)

Bradley, R. M., & Hobler, G. (2021). Second order corrections to the sputter yield of a curved surface. Journal of Applied Physics, 129(19), 194301. https://doi.org/10.1063/5.0047520 ( reposiTUm)

Schlueter, K., Nordlund, K., Hobler, G., Balden, M., Granberg, F., Flinck, O., da Silva, T. F., & Neu, R. (2020). Absence of a Crystal Direction Regime in which Sputtering Corresponds to Amorphous Material. Physical Review Letters, 125(225502). https://doi.org/10.1103/physrevlett.125.225502 ( reposiTUm)

Hobler, G., Maciążek, D., & Postawa, Z. (2019). Ion bombardment induced atom redistribution in amorphous targets: MD versus BCA. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 447, 30–33. https://doi.org/10.1016/j.nimb.2019.03.028 ( reposiTUm)

Hobler, G., & Nordlund, K. (2019). Channeling maps for Si ions in Si: Assessing the binary collision approximation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 449, 17–21. https://doi.org/10.1016/j.nimb.2019.04.029 ( reposiTUm)

Hobler, G., Maciążek, D., & Postawa, Z. (2018). Crater function moments: Role of implanted noble gas atoms. Physical Review B, 97(155307). https://doi.org/10.1103/physrevb.97.155307 ( reposiTUm)

Urbassek, H. M., Nietiadi, M. L., Bradley, R. M., & Hobler, G. (2018). Sputtering of SicGe₁₋c nanospheres. Physical Review B, 97(155408). https://doi.org/10.1103/physrevb.97.155408 ( reposiTUm)

Nordlund, K., & Hobler, G. (2018). Dependence of ion channeling on relative atomic number in compounds. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 435, 61–69. https://doi.org/10.1016/j.nimb.2017.11.020 ( reposiTUm)

Lindsey, S. J., Hobler, G., Maciążek, D., & Postawa, Z. (2017). Simple model of surface roughness for binary collision sputtering simulations. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 393, 17–21. https://doi.org/10.1016/j.nimb.2016.09.028 ( reposiTUm)

Hobler, G., Nietiadi, M., Bradley, R. M., & Urbassek, H. M. (2016). Sputtering of silicon membranes with nanoscale thickness. Journal of Applied Physics, 119, 245105. http://hdl.handle.net/20.500.12708/149009 ( reposiTUm)

Hobler, G., Bradley, R. M., & Urbassek, H. M. (2016). Probing the limitations of Sigmund’s model of spatially resolved sputtering using Monte Carlo simulations. Physical Review B, 93(205443). https://doi.org/10.1103/physrevb.93.205443 ( reposiTUm)

Nordlund, K., Djurabekova, F., & Hobler, G. (2016). Large fraction of crystal directions leads to ion channeling. Physical Review B, 94(214109). https://doi.org/10.1103/physrevb.94.214109 ( reposiTUm)

Hobler, G. (2015). Combined binary collision and continuum mechanics model applied to focused ion beam milling of a silicon membrane. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 352, 22–26. http://hdl.handle.net/20.500.12708/151220 ( reposiTUm)

Lindsey, S., Waid, S., Hobler, G., Wanzenböck, H. D., & Bertagnolli, E. (2014). Inverse modeling of FIB milling by dose profile optimization. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 341, 77–83. https://doi.org/10.1016/j.nimb.2014.09.006 ( reposiTUm)

Lindsey, S., & Hobler, G. (2013). Sputtering of silicon at glancing incidence. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 303, 142–147. https://doi.org/10.1016/j.nimb.2012.12.087 ( reposiTUm)

Hobler, G. (2013). Assessment of surface potential models by molecular dynamics simulations of atom ejection from (100)-Si surfaces. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 303, 165–169. http://hdl.handle.net/20.500.12708/155178 ( reposiTUm)

Kim, H.-B., Hobler, G., Steiger, A., Lugstein, A., Bertagnolli, E., Platzgummer, E., & Loeschner, H. (2012). Sputter-Redeposition Method for the Fabrication of Automatically Sealed Micro/Nanochannel using FIBs. International Journal of Precision Engineering and Manufacturing, 12(5), 893–898. https://doi.org/10.1007/s12541-011-0119-3 ( reposiTUm)

Lindsey, S., & Hobler, G. (2012). The significance of redeposition and backscattering in nanostructure formation by focused ion beams. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 282, 12–16. https://doi.org/10.1016/j.nimb.2011.08.051 ( reposiTUm)

Hobler, G., & Kovač, D. (2011). Dynamic binary collision simulation of focused ion beam milling of deep trenches. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 269(14), 1609–1613. https://doi.org/10.1016/j.nimb.2010.12.076 ( reposiTUm)

Ebm, C., Hobler, G., Waid, S., & Wanzenboeck, H. D. (2011). Quantitative simulation of ion-beam induced deposition of nanostructures. Journal of Vacuum Science & Technology B, 29(1), 011031. https://doi.org/10.1116/1.3533951 ( reposiTUm)

Budil, M., & Hobler, G. (2011). Topography simulation of sputtering using an algorithm with second order approximation in space. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 269(14), 1614–1618. https://doi.org/10.1016/j.nimb.2010.11.010 ( reposiTUm)

Ebm, C., Hobler, G., Waid, S., & Wanzenboeck, H. D. (2010). Modeling of precursor coverage in ion-beam induced etching and verification with experiments using XeF2 on SiO2. Journal of Vacuum Science & Technology B, 28(5), 946–951. https://doi.org/10.1116/1.3481139 ( reposiTUm)

Ebm, C., & Hobler, G. (2009). Assessment of approximations for efficient topography simulation of ion beam processes: 10 keV Ar on Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 267(18), 2987–2990. https://doi.org/10.1016/j.nimb.2009.06.014 ( reposiTUm)

Ebm, C., Platzgummer, E., Löschner, H., Eder-Kapl, S., Jöchl, P., Kümmel, M., Reitinger, R., Hobler, G., Köck, A., Hainberger, R., Wellenzohn, M., Letzkus, F., & Irmscher, M. (2009). Ion multibeam nanopatterning for photonic applications: Experiments and simulations, including study of precursor gas induced etching and deposition. Journal of Vacuum Science & Technology B, 27(6), 2668–2673. http://hdl.handle.net/20.500.12708/166285 ( reposiTUm)

Kovač, D., & Hobler, G. (2009). Amorphous pocket model based on the modified heat transport equation and local lattice collapse. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 267(8–9), 1229–1231. https://doi.org/10.1016/j.nimb.2009.01.032 ( reposiTUm)

Kim, H.-B., Hobler, G., Steiger-Thirsfeld, A., Lugstein, A., & Bertagnolli, E. (2007). Full three-dimensional simulation of focused ion beam micro/nanofabrication. Nanotechnology, 18, 2453031–2453038. http://hdl.handle.net/20.500.12708/168574 ( reposiTUm)

MoberlyChan, W. J., Adams, D. P., Aziz, M. J., Hobler, G., & Schenkel, T. (2007). Fundamentals of Focused Ion Beam Nanostructural Processing: Below, At, and Above the Surface. MRS Bulletin, 32, 424–432. http://hdl.handle.net/20.500.12708/168570 ( reposiTUm)

Rong, Z., Gao, F., Weber, W. J., & Hobler, G. (2007). Monte Carlo simulations of defect recovery within a 10 keV collision cascade in 3C-SiC. Journal of Applied Physics, 102, 1035081–1035087. http://hdl.handle.net/20.500.12708/168575 ( reposiTUm)

Kim, H.-B., Hobler, G., Steiger-Thirsfeld, A., Lugstein, A., & Bertagnolli, E. (2007). Level set approach for the simulation of focused ion beam processing on the micro/nano scale. Nanotechnology, 18, 2653071–2653076. http://hdl.handle.net/20.500.12708/168572 ( reposiTUm)

Kim, H.-B., Hobler, G., Lugstein, A., & Bertagnolli, E. (2007). Simulation of ion beam induced micro/nano fabrication. Journal of Micromechanics and Microengineering, 17(6), 1178–1183. https://doi.org/10.1088/0960-1317/17/6/011 ( reposiTUm)

Kim, H.-B., Hobler, G., Steiger-Thirsfeld, A., Lugstein, A., & Bertagnolli, E. (2007). Simulation-based approach for the accurate fabrication of blazed grating sturctures by FIB. Optics Express, 15(15), 9444–9449. http://hdl.handle.net/20.500.12708/168571 ( reposiTUm)

Kim, H.-B., & Hobler, G. (2007). Ion Beam Induced Micro/Nano Fabrication: Shape Fabrication. Journal of the Korean Society for Precision Engineering, 24(10), 109–116. http://hdl.handle.net/20.500.12708/171292 ( reposiTUm)

Kim, H.-B., & Hobler, G. (2007). Ion Beam Induced Micro/Nano Fabrication: Modeling. Journal of the Korean Society for Precision Engineering, 24(8), 108–115. http://hdl.handle.net/20.500.12708/171291 ( reposiTUm)

Otto, G., Hobler, G., Palmetshofer, L., & Pongratz, P. (2007). Amorphous pockets in Si: Comparison of coupled molecular dynamics and TEM image contrast simulations with experimental results. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 255(1), 105–109. http://hdl.handle.net/20.500.12708/168990 ( reposiTUm)

Moutanabbir, O., Terreault, B., Chicoine, M., Simpson, J., Zahel, T., & Hobler, G. (2006). Hydrogen/Deuterium-defect complexes involved in the ion cutting of Si (0 0 1) at the sub-100 nm scale. Physica B: Condensed Matter, 376, 36–40. http://hdl.handle.net/20.500.12708/171772 ( reposiTUm)

Kovac, D., & Hobler, G. (2006). Investigation of the impact of defect models on Monte Carlo simulations of RBS/C spectra. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 249, 776–779. http://hdl.handle.net/20.500.12708/171751 ( reposiTUm)

Hobler, G., Bourdelle, K. K., & Akatsu, T. (2006). Random and channeling stopping power of H in Si below 100keV. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 242, 617–619. http://hdl.handle.net/20.500.12708/171752 ( reposiTUm)

Otto, G., Hobler, G., Pongratz, P., & Palmetshofer, L. (2006). Is there an influence of ion-beam-induced interfacial amorphization on the a/c-interface depth in silicon at common implantation energies? Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 253(1–2), 227–231. https://doi.org/10.1016/j.nimb.2006.10.031 ( reposiTUm)

Otto, G., Hobler, G., Palmetshofer, L., Mayerhofer, K. E., Piplits, K., & Hutter, H. (2006). Dose-rate dependence of damage formation in Si by N implantation as determined from channeling profile measurements. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 242, 667–669. http://hdl.handle.net/20.500.12708/171753 ( reposiTUm)

Mayerhofer, K. E., Foisner, J., Piplits, K., Hobler, G., Palmetshofer, L., & Hutter, H. (2005). Range evaluation in SIMS depth profiles of Er - implantations in silicon. Applied Surface Science, 252(1), 271–277. http://hdl.handle.net/20.500.12708/172887 ( reposiTUm)

Hobler, G., & Kresse, G. (2005). Ab initio calculations of the interaction between native point defects in silicon. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 124–125, 368–371. http://hdl.handle.net/20.500.12708/171632 ( reposiTUm)

Hobler, G., & Selberherr, S. (1989). Monte Carlo Simulation of Ion Implantation into Two- and Three-Dimensional Structures. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 8(5), 450–459. https://doi.org/10.1109/43.24873 ( reposiTUm)

Hobler, G., & Selberherr, S. (1988). Two-Dimensional Modeling of Ion Implantation Induced Point Defects. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 7(2), 174–180. https://doi.org/10.1109/43.3147 ( reposiTUm)

Hobler, G., Langer, E., & Selberherr, S. (1987). Two-Dimensional Modeling of Ion Implantation with Spatial Moments. Solid-State Electronics, 30(4), 445–455. https://doi.org/10.1016/0038-1101(87)90175-4 ( reposiTUm)

Hobler, G., & Nordlund, K. (2024). Finite-range repulsive interatomic potentials for binary collision simulations. In IBMM2024: International Conference on Ion Beam Modification of materials (IBMM): Abstract Book. 23rd International Conference on Ion Beam Modification of Materials (IBMM2024), London, United Kingdom of Great Britain and Northern Ireland (the). http://hdl.handle.net/20.500.12708/204127 ( reposiTUm)

Höflich, K., Hobler, G., Allen, F., Wirtz, T., Rius, G., & Hlawacek, G. (2024). Roadmap for Focused Ion Beam Technologies. In EIPBN 2024 Abstracts. 67th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN 2024), La Jolla, United States of America (the). http://hdl.handle.net/20.500.12708/203821 ( reposiTUm)

Höflich, K., Hobler, G., Allen, F., Wirtz, T., Ruis Gemma, & Hlawacek, G. (2024). Roadmap for Focused Ion Beam Technologies. In IBMM2024 International Conference on Ion Beam Modification of Materials (IBMM): Abstract Book. 23rd International Conference on Ion Beam Modification of Materials (IBMM2024), London, United Kingdom of Great Britain and Northern Ireland (the). http://hdl.handle.net/20.500.12708/204129 ( reposiTUm)

Andersen, D., Mousley, M., Tabean, S., Holeňák, R., Ntemou, E., Hobler, G., Wirtz, T., Primetzhofer, D., & Eswara, S. (2024). 5D-ToF-STIM Hyperspectral Imaging with a keV He+ Focused Ion Beam. In K. Qvortrup & K. Weede Alexander (Eds.), The 17th European Microscopy Congress (EMC 2024). https://doi.org/10.1051/bioconf/202412906006 ( reposiTUm)

Hobler, G., & Bradley, R. M. (2023). Sputtering from Sinusoidal Surfaces: Monte Carlo Simulations and Comparison to Analytical Results. In SKM 2023 - scientific programme. Verhandlungen der Deutschen Physikalischen Gesellschaft e.V., Dresden, Germany. Deutsche Physikalische Gesellschaft e.V. http://hdl.handle.net/20.500.12708/188245 ( reposiTUm)

Tabean, S., Mousley, M., Hobler, G., De Castro, O., Wirtz, T., & Eswara, S. (2023). Analyses of Contrast in keV Scanning Transmission Helium Ion Microscopy. In IUMRS-ICAM & ICMAT2023 Programme E-Guide. IUMRS International Conference on Advanced Materials & 11th International Conference on Materials for Advanced Technologies, Singapore, Singapore. http://hdl.handle.net/20.500.12708/189434 ( reposiTUm)

Höflich, K., Hobler, G., Allen, F., Wirtz, T., Rius, G., & Hlawacek, G. (2023). IB-ThP-2 Roadmap for Focused Ion Beam Technologies. In AVS 69th International Symposium & Exhibition: Abstract Book (pp. 190–190). http://hdl.handle.net/20.500.12708/193678 ( reposiTUm)

Current, M., Hobler, G., & Kawasaki, Y. (2019). Aspects of Highly-channeled MeV Implants of Dopants in Si(100). In 19th International Workshop on Junction Technology 2019 (pp. 40–45). http://hdl.handle.net/20.500.12708/76659 ( reposiTUm)

Hobler, G., Nordlund, K., Current, M., & Schustereder, W. (2018). Simulation Study of Al Channeling in 4H-SiC. In 22nd International Conference on Ion Implantation Technology (pp. 247–250). http://hdl.handle.net/20.500.12708/76429 ( reposiTUm)

Current, M., Hobler, G., Kawasaki, Y., & Sugitani, M. (2018). Channeled MeV B, P and As Profiles in Si(100): Monte-Carlo Models and SIMS. In 22nd International Conference on Ion Implantation Technology (pp. 251–254). http://hdl.handle.net/20.500.12708/76428 ( reposiTUm)

Hobler, G., Maciazek, D., Postawa, Z., & Bradley, R. M. (2017). Crater function moments: The influence of implanted noble gas atoms. In Book of Abstracts (p. 33). http://hdl.handle.net/20.500.12708/76038 ( reposiTUm)

Hobler, G., Bradley, R. M., & Urbassek, H. M. (2015). Testing Sigmund’s Model of Sputtering. In Book of Abstracts (p. 7). http://hdl.handle.net/20.500.12708/74768 ( reposiTUm)

Waid, S., Wanzenböck, H. D., Hobler, G., Zahel, T., Bertagnolli, E., Mühlberger, M., & Schöftner, R. (2010). Topography Extraction Of 3d Structures Through Afm Of Nanoimprints. In 9th International Conference on Nanoimprint and Nanoprint. 9th International Conference on Nanoimprint and Nanoprint, Kopenhagen, EU. http://hdl.handle.net/20.500.12708/72003 ( reposiTUm)

Ebm, C., & Hobler, G. (2009). Simulation of Ion-beam Induced Etching and Deposition Using a Non-local Recoil-based Algorithm. In MRS online Proceedings library (p. 6). http://hdl.handle.net/20.500.12708/71245 ( reposiTUm)

Zahel, T., Hobler, G., & Bourdelle, K. K. (2008). Investigation of defect evolution during hydrogen implantation using kinetic Monte Carlo simulations. In Abstracts. E-MRS Spring Meeting, Strasbourg, France. http://hdl.handle.net/20.500.12708/70451 ( reposiTUm)

Hobler, G., & Kim, H. B. (2008). 3D FIB process simulation for photonic applications. In Proceedings of the First International Workshop on FIB for Photonics (pp. 8–11). http://hdl.handle.net/20.500.12708/70696 ( reposiTUm)

Terreault, B., Chicoine, M., Desrosiers, N., Giguere, A., Hobler, G., Moutanabbir, O., Ross, G., Schiettekatte, F., Simpson, P., & Zahel, T. (2005). Isotope effects in low-energy ion-induced splitting. In Silicon-on-Insulator Technology and Devices XII (pp. 155–166). http://hdl.handle.net/20.500.12708/68949 ( reposiTUm)

Kim, H. B., Hobler, G., Lugstein, A., & Bertagnolli, E. (2005). “AMADEUS” Software for Ion Beam Nano Patterning and Characteristics of Nano Fabrication. In Proc. 2005 Autumn Conference of the Korean Society of Precision Engineering (pp. 322–325). http://hdl.handle.net/20.500.12708/68968 ( reposiTUm)

Kim, H. B., & Hobler, G. (2005). Analysis of Ion Beam-Solid Interactions for Nano Fabrication. In Proc. 2005 Autumn Conference of the Korean Society of Precision Engineering (pp. 581–584). http://hdl.handle.net/20.500.12708/68969 ( reposiTUm)

Zahel, T., Otto, G., & Hobler, G. (2005). Atomistic Simulation of Hydrogen Implantation for SOI Wafer Production. In EUROSOI 2005, Book of Abstracts (pp. 35–36). http://hdl.handle.net/20.500.12708/68946 ( reposiTUm)

Zahel, T., Otto, G., & Hobler, G. (2005). Atomistic simulation of the isotope effect on defect formation in H/D-implanted Si. In Silicon-on-Insulator Technology and Devices XI (pp. 179–184). http://hdl.handle.net/20.500.12708/68948 ( reposiTUm)

Hobler, G. (2004). Simulation of Focused Ion Beam Milling. In Proc. 5th Int. Symp. MEMS and Nanotechnology (pp. 46–51). http://hdl.handle.net/20.500.12708/68456 ( reposiTUm)

Stippel, H., Halama, S., Hobler, G., Wimmer, K., & Selberherr, S. (1992). Adaptive Grid for Monte Carlo Simulation of Ion Implantation. In Proceedings NUPAD IV (pp. 231–236). http://hdl.handle.net/20.500.12708/68376 ( reposiTUm)

Halama, S., Hobler, G., Wimmer, K., & Selberherr, S. (1991). Eine neue Methode zur Simulation der Diffusion in allgemeinen Strukturen. In Tagungsbericht Seminar Grundlagen und Technologie elektronischer Bauelemente (pp. 20–26). http://hdl.handle.net/20.500.12708/68356 ( reposiTUm)

Wimmer, K., Bauer, R., Halama, S., Hobler, G., & Selberherr, S. (1991). Simulation nichtplanarer Herstellungsprozesse mit PROMIS. In Tagungsbericht Seminar Grundlagen und Technologie elektronischer Bauelemente (pp. 10–19). http://hdl.handle.net/20.500.12708/68357 ( reposiTUm)

Wimmer, K., Bauer, R., Halama, S., Hobler, G., & Selberherr, S. (1991). Transformation Methods for Nonplanar Process Simulation. In Proceedings SISDEP 91 (pp. 131–138). http://hdl.handle.net/20.500.12708/68366 ( reposiTUm)

Halama, S., Wimmer, K., Hobler, G., & Selberherr, S. (1990). Finite-Differenzen Dreiecksnetzgenerierung für die Prozess-Simulation mit PROMIS. In Proceedings NuTech (p. 3). http://hdl.handle.net/20.500.12708/68364 ( reposiTUm)

Hobler, G., Halama, S., Wimmer, K., Selberherr, S., & Pötzl, H. (1990). RTA-Simulations with the 2-D Process Simulator PROMIS. In NUPAD III Techn. Digest (pp. 13–14). http://hdl.handle.net/20.500.12708/68347 ( reposiTUm)

Wimmer, K., Bauer, R., Halama, S., Hobler, G., & Selberherr, S. (1990). Prozess-Simulation in nichtplanaren Strukturen mit PROMIS. In Proceedings NuTech (p. 4). http://hdl.handle.net/20.500.12708/68358 ( reposiTUm)

Hobler, G., & Selberherr, S. (1988). Monte Carlo Simulation of Ion Implantation into Two- and Three-Dimensional Structures. In Proceedings of the International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits. International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Honolulu, Austria. http://hdl.handle.net/20.500.12708/69842 ( reposiTUm)

Hobler, G., & Selberherr, S. (1987). Efficient Two-Dimensional Monte-Carlo Simulation of Ion Implantation. In Proceedings Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits (pp. 225–230). http://hdl.handle.net/20.500.12708/68435 ( reposiTUm)

Hobler, G., Langer, E., & Selberherr, S. (1986). Two-Dimensional Modeling of Ion-Implantation. In Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes (pp. 256–270). http://hdl.handle.net/20.500.12708/68442 ( reposiTUm)

Hobler, G., Guerrero, E., & Selberherr, S. (1986). Two-Dimensional Modeling of Ion Implantation Induced Point Defects. In Proceedings of the International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (pp. 10–11). http://hdl.handle.net/20.500.12708/68445 ( reposiTUm)

Kim, H. B., & Hobler, G. (2012). Simulation of Focused Ion Beam Milling. In I. Utke, S. Moshkalev, & Ph. St. J. Russell (Eds.), Nanofabrication Using Focused Ion and Electron Beam (pp. 226–247). Oxford University Press. http://hdl.handle.net/20.500.12708/27738 ( reposiTUm)

Rüdenauer, F., Hobler, G., Mitterauer, J., Koops, H. W. P., Palmetshofer, L., & Bluhm, H. (2008). Ion beam devices for material processing and analysis. In Vacuum Electronics, Components and Devices (pp. 231–263). Springer. http://hdl.handle.net/20.500.12708/26312 ( reposiTUm)

Nordlund, K., Lehtola, S., & Hobler, G. (2024, June 20). Comparative study of repulsive interatomic potentials from different levels of quantum chemical calculations [Conference Presentation]. 16th international conference on computer simulation of radiation effects in solids (COSIRES 2024), Kingston, Canada. http://hdl.handle.net/20.500.12708/203808 ( reposiTUm)

Hobler, G. (2023, March 28). IMSIL: Recent Developments and Future Plans [Presentation]. fit4nano WG2 Meeting, Dresden, Germany. ( reposiTUm)

Schlueter, K., Nordlund, K., Balden, M., Silva, T. F., Hobler, G., & Neu, R. (2019). Crystal-Orientation-Dependent Sputtering of Tungsten. 24th International Conference on Ion Beam Analysis (IBA2019), Antibes, France. http://hdl.handle.net/20.500.12708/91206 ( reposiTUm)

Hobler, G., & Nordlund, K. (2018). Channeling maps: Assessing the binary collision approximation. International Conference on Simulation of Radiation Effects in Solids, Krakow, Poland. http://hdl.handle.net/20.500.12708/91130 ( reposiTUm)

Hobler, G., Maciazek, D., & Postawa, Z. (2018). Ion bombardment-induced atom redistribution in amorphous silicon: MD versus BCA. International Conference on Simulation of Radiation Effects in Solids, Krakow, Poland. http://hdl.handle.net/20.500.12708/91129 ( reposiTUm)

Nordlund, K., Djurabekova, F., & Hobler, G. (2017). Effect of atom sizes in ionic compounds on channeling: channeling map analysis. International Conference on Radiation Effects in Insulators, Versailles, France. http://hdl.handle.net/20.500.12708/90929 ( reposiTUm)

Lindsey, S., Hobler, G., Maciazek, D., & Postawa, Z. (2016). Simple model of surface roughness for binary collision sputtering simulations. International Conference on Simulation of Radiation Effects in Solids, Krakow, Polen, EU. http://hdl.handle.net/20.500.12708/90846 ( reposiTUm)

Hobler, G. (2016). Combined binary collision and continuum mechanics model applied to focused ion beam milling of a silicon membrane. International Conference on Computer Simulation on Radiation Effects in Solids, Alicante, Spanien, EU. http://hdl.handle.net/20.500.12708/90847 ( reposiTUm)

Hobler, G., Nietiadi, M., Bradley, R. M., & Urbassek, H. M. (2016). Sputtering of silicon membranes with nanoscale thickness. International Conference on Simulation of Radiation Effects in Solids, Krakow, Polen, EU. http://hdl.handle.net/20.500.12708/90845 ( reposiTUm)

Wanzenböck, H. D., Waid, S., Hobler, G., & Lindsey, S. (2014). 2.5D-Nanoimprint Lithography. NIL Industrial Day, Linz, Austria. http://hdl.handle.net/20.500.12708/90492 ( reposiTUm)

Lindsey, S., Waid, S., Hobler, G., Wanzenböck, H. D., & Bertagnolli, E. (2013). Inverse Modeling of FIB Milling by Dose Profile Optimization. European Materials Research Society (EMRS), Strasbourg, France, EU. http://hdl.handle.net/20.500.12708/90217 ( reposiTUm)

Lindsey, S., & Hobler, G. (2013). Simulation of Glancing Angle Sputtering with a Density Gradient Model to Represent Surface Roughness. Particle-surface interactions: from surface analysis to materials processing (PASI), Luxemburg, EU. http://hdl.handle.net/20.500.12708/90218 ( reposiTUm)

Lindsey, S., & Hobler, G. (2012). Sputtering of Silicon at Glancing Incidence. International Conference on Simulation of Radiation Effects in Solids, Krakow, Polen, EU. http://hdl.handle.net/20.500.12708/90043 ( reposiTUm)

Hobler, G. (2012). Molecular dynamics study of atom ejection from an eroding (100)-Si surface. International Conference on Simulation of Radiation Effects in Solids, Krakow, Polen, EU. http://hdl.handle.net/20.500.12708/90042 ( reposiTUm)

Waid, S., Mika, J., Lindsey, S., Wanzenböck, H. D., Hobler, G., & Bertagnolli, E. (2012). Fabrication of 3D Axon Isolation Channels by Inverse Modelling Assisted Focused Ion Beam Patterning. Micro- and Nano-Engineering Conference, Vienna, Austria, Austria. http://hdl.handle.net/20.500.12708/89967 ( reposiTUm)

Lindsey, S., & Hobler, G. (2011). The Role/Relevance/Significance/Implications of Redeposition and Backscattering in Focused Ion Beam Milling/Nanostructure Formation by Focused Ion Beams. E-MRS Spring Meeting 2008, Strasbourg, France. http://hdl.handle.net/20.500.12708/90041 ( reposiTUm)

Hobler, G. (2010). Simulation of Nanostructuring with Focused Ion Beams. FIB-Workshop, Wien, Austria. http://hdl.handle.net/20.500.12708/90038 ( reposiTUm)

Budil, M., & Hobler, G. (2010). Topography Simulation of Sputtering using an Algorithm with Second Order Approximation in Space. International Conference on Simulation of Radiation Effects in Solids, Krakow, Polen, EU. http://hdl.handle.net/20.500.12708/90040 ( reposiTUm)

Hobler, G. (2010). Binary Collision Simulation of Focused Ion Beam Milling of Deep Trenches. International Conference on Simulation of Radiation Effects in Solids, Krakow, Polen, EU. http://hdl.handle.net/20.500.12708/90039 ( reposiTUm)

Ebm, C., Budil, M., & Hobler, G. (2008). oeAssessment of approximations for efficient topography simulation of ion beam processes: 10 keV Ar on Si. 9th International Conference on Simulation of Radiation Effects in Solids, Beijing, China, Non-EU. http://hdl.handle.net/20.500.12708/88977 ( reposiTUm)

Kovac, D., & Hobler, G. (2008). oeAmorphous pocket model based on the modified heat transport equation and local lattice collapse. International Conference on Ion Beam Modification of Materials (IBMM), Taormina, Italy, EU. http://hdl.handle.net/20.500.12708/88978 ( reposiTUm)

Pongratz, P., Otto, G., Hobler, G., & Palmetshofer, L. (2007). Analysis of Experimental TEM Image Contrast of Amorphous Pockets using Molecular Dynamics Computer Simulations aof Collision Cascades in Silicon. ICDS -24, 24th International Conference on Defects in Semiconductors, New Mexico, USA, Non-EU. http://hdl.handle.net/20.500.12708/126763 ( reposiTUm)

Hobler, G. (2006). Simulation von Topographie- und Materialmodifikation mittels fokussierter Ionenstrahlen. Seminar Institut für Allgemeine Physik (IAP), TU Wien, Austria. http://hdl.handle.net/20.500.12708/125915 ( reposiTUm)

Otto, G., Hobler, G., Palmetshofer, L., & Pongratz, P. (2006). Comparison of TEM image contrast simulations of amorphous pockets in Si as obtained by molecular dynamics simulations with experimental results. 8th Intern. Conf. on Computer Simulation of Radiation Effects in Solids (COSIRES 2006), Richland, Oregon/USA, Non-EU. http://hdl.handle.net/20.500.12708/126318 ( reposiTUm)

Otto, G., Hobler, G., Palmetshofer, L., & Pongratz, P. (2006). Verification of MD Results on Amorphous Pockets in Si using TEM Image Contrast Simulations. 8th Intern. Conf. on Computer Simulation of Radiation Effects in Solids (COSIRES 2006), Richland, Oregon/USA, Non-EU. http://hdl.handle.net/20.500.12708/126317 ( reposiTUm)

Hobler, G., & Kresse, G. (2005). Ab-initio calculations of the interaction between native point defects in silicon. Materials Research Society Spring Meeting (MRS), San Francisco, Non-EU. http://hdl.handle.net/20.500.12708/88443 ( reposiTUm)

Moutanabbir, O., Terreault, B., Chicoinec, M., Simpson, J., Zahel, T., & Hobler, G. (2005). Hydrogen/Deuterium-defect complexes involved in the ion-cutting of Si(001) at the sub-100 nm scale. International Conference on Defects in Semiconductors, Awaji Island, Hyogo, Japan, Austria. http://hdl.handle.net/20.500.12708/88428 ( reposiTUm)

Wanzenböck, H. D., Harasek, S., Hobler, G., Hutter, H., Störi, H., Pongratz, P., & Bertagnolli, E. (2002). Dielectric nanostructure fabricatio using a focused ion beam. IBMM 2002, Kobe, Japan, Austria. http://hdl.handle.net/20.500.12708/126321 ( reposiTUm)

Hobler, G. (2002). Status and open problems in silicon implant damage modeling. 3rd Int. Meeting Challenges in Predictive Process Simulation, Prague, Czech Republic, Austria. http://hdl.handle.net/20.500.12708/87926 ( reposiTUm)

Wanzenböck, H. D., Hobler, G., Langfischer, H., Harasek, S., Brezna, W., Smoliner, J., & Bertagnolli, E. (2002). Characterization of Doping and intermixing effects of focused ion beam processing. IBMM 2002, Kobe, Japan, Austria. http://hdl.handle.net/20.500.12708/87916 ( reposiTUm)

Hobler, G., & Otto, G. (2002). Detailed modeling of ion implantation damage in silicon using a binary collision approach with information from molecular dynamics simulations. IBMM 2002, Kobe, Japan, Austria. http://hdl.handle.net/20.500.12708/87917 ( reposiTUm)

Otto, G., Hobler, G., & Gärtner, K. (2002). Defect characterization of 10-200 eV recoil events in silicon using classical molecular dynamcs. 6th Int. Conf. Computer Simulation of Radiation Effects in Solids, Dresden, Deutschland, Austria. http://hdl.handle.net/20.500.12708/87899 ( reposiTUm)

Hobler, G. (2000). Modeling of Focused Ion Beam Milling. Bell Laboratories, Lucent Technologies, Austria. http://hdl.handle.net/20.500.12708/87739 ( reposiTUm)

Palmetshofer, L., Gritsch, M., & Hobler, G. (2000). Range ot ion-implanted rare earth element in Si and Si02. Materials Research Society Spring Meeting (MRS), San Francisco, Non-EU. http://hdl.handle.net/20.500.12708/87705 ( reposiTUm)

Boxleitner, W., & Hobler, G. (2000). FIBSIM -- Dynamic Monte Carlo simulation of compositional and topography changes caused by focused ion beam milling. 5th Interanional Conference Computer Simulation of Radiation Effects in Solids, Penn State University, USA, Austria. http://hdl.handle.net/20.500.12708/87710 ( reposiTUm)

Hobler, G., & Betz, G. (2000). On the useful range of application of molecular dynamics simulations in the recoil interaction approximation. 5th Interanional Conference Computer Simulation of Radiation Effects in Solids, Penn State University, USA, Austria. http://hdl.handle.net/20.500.12708/87711 ( reposiTUm)

Boxleitner, W., Hobler, G., Klüppel, V., & Cerva, H. (2000). Dynamic simulation of topography evolution and damage formation in TEM sample preparation using focused ion beams. 12th International Conference Ion Beam Modification of Materials, Gramado-Canela, Brasil, Austria. http://hdl.handle.net/20.500.12708/87713 ( reposiTUm)

Lindsey, S., Hobler, G., Rue, C., & Maazouz, M. (2012). Focused Ion Beam Simulation - Investigation of the Curtaining Effect in TEM Sample Preparation. http://hdl.handle.net/20.500.12708/37616 ( reposiTUm)

Zahel, T., & Hobler, G. (2009). IMSIL-kLMC. http://hdl.handle.net/20.500.12708/35977 ( reposiTUm)

Zahel, T., & Hobler, G. (2009). Kinetic Monte Carlo studies of Smart Cut technology in Si: Final report. http://hdl.handle.net/20.500.12708/35978 ( reposiTUm)

Zahel, T., & Hobler, G. (2008). Kinetic Monte Carlo studies of Smart Cut technology in Si: Platelet model and influence of He damage on platelet formation. http://hdl.handle.net/20.500.12708/35976 ( reposiTUm)

Zahel, T., & Hobler, G. (2008). Kinetic Monte Carlo studies of Smart Cut technology in Si: The influence of He damage on defects generated by H and He co-implantation. http://hdl.handle.net/20.500.12708/36006 ( reposiTUm)

Beck, P., Hobler, G., Köck, A., Rollet, S., Wachmann, E., & Wind, M. (2008). RADSI - Radiation Hardness of Silicon Nanostructures, Technical final report. http://hdl.handle.net/20.500.12708/35991 ( reposiTUm)

Hobler, G., & Kovac, D. (2007). Interim Report on FIBSIM Code Development. http://hdl.handle.net/20.500.12708/31367 ( reposiTUm)

Hobler, G., & Zahel, T. (2007). Kinetic Monte Carlo studies of Smart Cut technology in Si. http://hdl.handle.net/20.500.12708/31369 ( reposiTUm)

Hobler, G. (2007). IMSIL Code Modification and Calibration for H inplantations into GaN. http://hdl.handle.net/20.500.12708/31368 ( reposiTUm)

Beck, P., Hobler, G., & Wachmann, E. (2007). RADSI Progress Report. http://hdl.handle.net/20.500.12708/31370 ( reposiTUm)

Boxleitner, W., & Hobler, G. (2000). High Quality Sample Operation for Nanometric Analysis and Testing Equipments. http://hdl.handle.net/20.500.12708/31053 ( reposiTUm)