Wissenschaftliche Artikel

Bendra, M., Lacerda de Orio, R., Selberherr, S., Wolfgang Goes, & Sverdlov, V. (2025). A multi-level cell for ultra-scaled STT-MRAM realized by back-hopping. Solid-State Electronics, 223, Article 109027. https://doi.org/10.1016/j.sse.2024.109027 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2024). Electron and Spin Transport in Semiconductor and Magnetoresistive Devices. Solid-State Electronics, 218, Article 108962. https://doi.org/10.1016/j.sse.2024.108962 ( reposiTUm)

Bendra, M., Lacerda de Orio, R., Selberherr, S., Goes, W., & Sverdlov, V. (2024). Advanced modeling and simulation of multilayer spin–transfer torque magnetoresistive random access memory with interface exchange coupling. Micromachines, 15(5), Article 568. https://doi.org/10.3390/mi15050568 ( reposiTUm)

Pruckner, B., Fiorentini, S., Goes, W., Selberherr, S., & Sverdlov, V. (2024). Micromagnetic modeling of double spin-torque magnetic tunnel junction devices. PHYSICA B-CONDENSED MATTER, 688, Article 416124. https://doi.org/10.1016/j.physb.2024.416124 ( reposiTUm)

Jorstad, N. P., Fiorentini, S., Ender, J., Wolfgang Goes, Selberherr, S., & Sverdlov, V. (2024). Micromagnetic modeling of SOT-MRAM dynamics. PHYSICA B-CONDENSED MATTER, 676, Article 415612. https://doi.org/10.1016/j.physb.2023.415612 ( reposiTUm)

Hadamek, T., Jorstad, N. P., Goes, W., Selberherr, S., & Sverdlov, V. (2024). Numerical study of two-terminal SOT-MRAM. Physica B: Condensed Matter, 673, 1–6. https://doi.org/10.1016/j.physb.2023.415362 ( reposiTUm)

Ceric, H., Lacerda de Orio, R., & Selberherr, S. (2023). Statistical Study of Electromigration in Gold Interconnects. Microelectronics Reliability, 147, 1–7. https://doi.org/10.1016/j.microrel.2023.115061 ( reposiTUm)

Knobloch, T., Selberherr, S., & Grasser, T. (2023). High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI Circuits. ECS Transactions, 111(1), 219–228. https://doi.org/10.1149/11101.0219ecst ( reposiTUm)

Bendra, M., Fiorentini, S., Selberherr, S., Gös, W., & Sverdlov, V. (2023). A multi-level cell for ultra-scaled STT-MRAM realized by back-hopping. Solid-State Electronics, 208, Article 108738. https://doi.org/10.1016/j.sse.2023.108738 ( reposiTUm)

Ceric, H., Lacerda de Orio, R., & Selberherr, S. (2023). Microstructural impact on electromigration reliability of gold interconnects. Solid-State Electronics, 200, Article 108528. https://doi.org/10.1016/j.sse.2022.108528 ( reposiTUm)

Medina-Bailon, C., Nedialkov, M. H., Georgiev, V., Selberherr, S., & Asenov, A. (2023). Comprehensive mobility study of silicon nanowire transistors using multi-subband models. Nano Express, 4(2), Article 025005. https://doi.org/10.1088/2632-959X/acdb8a ( reposiTUm)

Yazdanpanah Goharrizi, A., Mojarani Barzoki, A., Selberherr, S., & Filipovic, L. (2023). A Theoretical Study of Armchair Antimonene Nanoribbons in the Presence of Uniaxial Strain Based on First-Principles Calculations. ACS Applied Electronic Materials, 5(8), 4514–4522. https://doi.org/10.1021/acsaelm.3c00686 ( reposiTUm)

Ceric, H., Zahedmanesh, H., Croes, K., Lacerda de Orio, R., & Selberherr, S. (2023). Electromigration-Induced Void Evolution and Failure of Cu/SiCN Hybrid Bonds. Journal of Applied Physics, 133(10), Article 105101. https://doi.org/10.1063/5.0134692 ( reposiTUm)

Fiorentini, S., Ender, J., Selberherr, S., Lacerda de Orio, R., Goes, W., & Sverdlov, V. (2023). Comprehensive evaluation of torques in ultra-scaled MRAM devices. Solid-State Electronics, 199, Article 108491. https://doi.org/10.1016/j.sse.2022.108491 ( reposiTUm)

Bendra, M., Fiorentini, S., Goes, W., Selberherr, S., & Sverdlov, V. (2023). The Influence of Interface Effects on the Switching Behavior in Ultra-Scaled MRAM Cells. Solid-State Electronics, 201, Article 108590. https://doi.org/10.1016/j.sse.2023.108590 ( reposiTUm)

Hadamek, T., Selberherr, S., Wolfgang Goes, & Sverdlov, V. (2023). Modeling Thermal Effects in STT-MRAM. Solid-State Electronics, 200, Article 108522. https://doi.org/10.1016/j.sse.2022.108522 ( reposiTUm)

Hadamek, T., Jorstad, N. P., Lacerda de Orio, R., Goes, W., Selberherr, S., & Sverdlov, V. (2023). A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices. Micromachines, 14(8), 1–14. https://doi.org/10.3390/mi14081581 ( reposiTUm)

Fiorentini, S., Pruckner, B., Goes, W., Selberherr, S., & Sverdlov, V. (2023). Accurate Torque Evaluation in Elongated Ultra-Scaled STT-MRAM Devices. ECS Transactions, 111(1), 181–186. https://doi.org/10.1149/11101.0181ecst ( reposiTUm)

Selberherr, S., & Sverdlov, V. (2022). About electron transport and spin control in semiconductor devices. Solid-State Electronics, 197, Article 108443. https://doi.org/10.1016/j.sse.2022.108443 ( reposiTUm)

Ender, J., Lacerda de Orio, R., Fiorentini, S., Selberherr, S., Goes, W., & Sverdlov, V. (2022). Reinforcement learning to reduce failures in SOT-MRAM switching. Microelectronics Reliability, 135(114570), 114570. https://doi.org/10.1016/j.microrel.2022.114570 ( reposiTUm)

Knobloch, T., Selberherr, S., & Grasser, T. (2022). Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials. Nanomaterials, 12(20), 3548. https://doi.org/10.3390/nano12203548 ( reposiTUm)

Ferry, D. K., Weinbub, J., Nedjalkov, M., & Selberherr, S. (2022). A Review of Quantum Transport in Field-Effect Transistors. Semiconductor Science and Technology, 37(4), 043001. https://doi.org/10.1088/1361-6641/ac4405 ( reposiTUm)

Hadámek, T., Fiorentini, S., Bendra, M., Ender, J., de Orio, R. L., Goes, W., Selberherr, S., & Sverdlov, V. (2022). Temperature Increase in STT-MRAM at Writing: A Fully Three-Dimensional Finite Element Approach. Solid-State Electronics, 193(108269), 108269. https://doi.org/10.1016/j.sse.2022.108269 ( reposiTUm)

Filipovic, L., & Selberherr, S. (2022). Application of two-dimensional materials towards CMOS-integrated gas sensors. Nanomaterials, 12(20), Article 3651. https://doi.org/10.3390/nano12203651 ( reposiTUm)

Loch, W. J., Fiorentini, S., Jørstad, N. P., Goes, W., Selberherr, S., & Sverdlov, V. (2022). Double Reference Layer STT-MRAM Structures with Improved Performance. Solid-State Electronics, 194(108335), Article 108335. https://doi.org/10.1016/j.sse.2022.108335 ( reposiTUm)

Jørstad, N. P., Fiorentini, S., Loch, W. J., Goes, W., Selberherr, S., & Sverdlov, V. (2022). Finite Element Modeling of Spin-Orbit Torques. Solid-State Electronics, 194, Article 108323. https://doi.org/10.1016/j.sse.2022.108323 ( reposiTUm)

Bendra, M., Fiorentini, S., Goes, W., Selberherr, S., & Sverdlov, V. (2022). The influence of interface effects on the switching behavior in ultra-scaled MRAM cells. Solid-State Electronics, 201, Article 108590. https://doi.org/10.1016/j.sse.2023.108590 ( reposiTUm)

Fiorentini, S., Bendra, M., Ender, J., Lacerda de Orio, R., Goes, W., Selberherr, S., & Sverdlov, V. (2022). Spin and charge drift-diffusion in ultra-scaled MRAM cells. Scientific Reports, 12, Article 20958. https://doi.org/10.1038/s41598-022-25586-4 ( reposiTUm)

Fiorentini, S., Lacerda de Orio, R., Ender, J., Selberherr, S., Bendra, M., Jorstad, N. P., Goes, W., & Sverdlov, V. (2022). Finite Element Method for MRAM Switching Simulations. WSEAS Transactions on Systems and Controls, 17, 585–588. https://doi.org/10.37394/23203.2022.17.64 ( reposiTUm)

Fiorentini, S., Ender, J., Selberherr, S., Goes, W., & Sverdlov, V. (2022). Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach. Journal on Systemics, Cybernetics and Informatics, 20(4), 40–44. https://doi.org/10.54808/JSCI.20.04.40 ( reposiTUm)

Filipovic, L., & Selberherr, S. (2021). Microstructure and Granularity Effects in Electromigration. IEEE Journal of the Electron Devices Society, 9, 476–483. https://doi.org/10.1109/jeds.2020.3044112 ( reposiTUm)

Benam, M., Ballicchia, M., Weinbub, J., Selberherr, S., & Nedjalkov, M. (2021). A Computational Approach for Investigating Coulomb Interaction Using Wigner-Poisson Coupling. Journal of Computational Electronics, 20(2), 775–784. https://doi.org/10.1007/s10825-020-01643-x ( reposiTUm)

Ender, J., Fiorentini, S., De Orio, R. L., Goes, W., Sverdlov, V., & Selberherr, S. (2021). Emerging CMOS Compatible Magnetic Memories and Logic. IEEE Journal of the Electron Devices Society, 9, 456–463. https://doi.org/10.1109/jeds.2021.3066679 ( reposiTUm)

Fiorentini, S., Ender, J., Selberherr, S., de Orio, R. L., Goes, W., & Sverdlov, V. (2021). Coupled Spin and Charge Drift-Diffusion Approach Applied to Magnetic Tunnel Junctions. Solid-State Electronics, 186(108103), 108103. https://doi.org/10.1016/j.sse.2021.108103 ( reposiTUm)

de Orio, R. L., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., & Sverdlov, V. (2021). Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning. Micromachines, 12(4), 443. https://doi.org/10.3390/mi12040443 ( reposiTUm)

Ceric, H., Selberherr, S., Zahedmanesh, H., de Orio, R. L., & Croes, K. (2021). Review - Modeling Methods for Analysis of Electromigration Degradation in Nano-Interconnects. ECS Journal of Solid State Science and Technology, 10(3), 035003. https://doi.org/10.1149/2162-8777/abe7a9 ( reposiTUm)

de Orio, R. L., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., & Sverdlov, V. (2021). Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell. IEEE Journal of the Electron Devices Society, 9, 61–67. https://doi.org/10.1109/jeds.2020.3039544 ( reposiTUm)

de Orio, R. L., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., & Sverdlov, V. (2021). Two-Pulse Switching Scheme and Reinforcement Learning for Energy Efficient SOT-MRAM Simulations. Solid-State Electronics, 185(108075), 108075. https://doi.org/10.1016/j.sse.2021.108075 ( reposiTUm)

Sverdlov, V., El-Sayed, A.-M. B., Seiler, H., Kosina, H., & Selberherr, S. (2021). Subbands in a Nanoribbon of Topologically Insulating MoS₂ in the 1T′ Phase. Solid-State Electronics, 184(108081), 108081. https://doi.org/10.1016/j.sse.2021.108081 ( reposiTUm)

Klemenschits, X., Selberherr, S., & Filipovic, L. (2021). Geometric Advection and Its Application in the Emulation of High Aspect Ratio Structures. Computer Methods in Applied Mechanics and Engineering, 386(114196), 114196. https://doi.org/10.1016/j.cma.2021.114196 ( reposiTUm)

Ender, J., Lacerda de Orio, R., Fiorentini, S., Selberherr, S., Goes, W., & Sverdlov, V. (2021). Improving failure rates in pulsed SOT-MRAM switching by reinforcement learning. Microelectronics Reliability, 126, 1–5. https://doi.org/10.1016/j.microrel.2021.114231 ( reposiTUm)

Toifl, A., Quell, M., Klemenschits, X., Manstetten, P., Hössinger, A., Selberherr, S., & Weinbub, J. (2020). The Level-Set Method for Multi-Material Wet Etching and Non-Planar Selective Epitaxy. IEEE Access, 8, 115406–115422. https://doi.org/10.1109/access.2020.3004136 ( reposiTUm)

de Orio, R. L., Makarov, A., Selberherr, S., Goes, W., Ender, J., Fiorentini, S., & Sverdlov, V. (2020). Robust Magnetic Field-Free Switching of a Perpendicularly Magnetized Free Layer for SOT-MRAM. Solid-State Electronics, 168(107730), 107730. https://doi.org/10.1016/j.sse.2019.107730 ( reposiTUm)

Sverdlov, V., El-Sayed, E. A.-M., Kosina, H., & Selberherr, S. (2020). Ballistic Conductance in a Topological 1T ’-MoS₂ Nanoribbon. Semiconductors, 54(12), 1713–1715. https://doi.org/10.1134/s1063782620120386 ( reposiTUm)

Fiorentini, S., de Orio, R. L., Selberherr, S., Ender, J., Goes, W., & Sverdlov, V. (2020). Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM. IEEE Journal of the Electron Devices Society, 8, 1249–1256. https://doi.org/10.1109/jeds.2020.3023577 ( reposiTUm)

Ferry, D. K., Nedjalkov, M., Weinbub, J., Ballicchia, M., Welland, I., & Selberherr, S. (2020). Complex Systems in Phase Space. Entropy, 22(10), 1103. https://doi.org/10.3390/e22101103 ( reposiTUm)

Sverdlov, V., El-Sayed, A.-M. B., Kosina, H., & Selberherr, S. (2020). Conductance in a Nanoribbon of Topologically Insulating MoS₂ in the 1T’ Phase. IEEE Transactions on Electron Devices, 67(11), 4687–4690. https://doi.org/10.1109/ted.2020.3023921 ( reposiTUm)

Nedjalkov, M., Weinbub, J., Ballicchia, M., Selberherr, S., Dimov, I., & Ferry, D. K. (2019). Wigner Equation for General Electromagnetic Fields: The Weyl-Stratonovich Transform. Physical Review B, 99(014423). https://doi.org/10.1103/physrevb.99.014423 ( reposiTUm)

Filipovic, L., & Selberherr, S. (2019). Thermo-Electro-Mechanical Simulation of Semiconductor Metal Oxide Gas Sensors. Materials, 12(15), 2410. https://doi.org/10.3390/ma12152410 ( reposiTUm)

Diamantopoulos, G., Hössinger, A., Selberherr, S., & Weinbub, J. (2019). A Shared Memory Parallel Multi-Mesh Fast Marching Method for Re-Distancing. Advances in Computational Mathematics, 45(4), 2029–2045. https://doi.org/10.1007/s10444-019-09683-z ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2019). Current and Shot Noise at Spin-Dependent Hopping through Junctions with Ferromagnetic Contacts. Solid-State Electronics, 159, 43–50. https://doi.org/10.1016/j.sse.2019.03.053 ( reposiTUm)

Woerle, J., Šimonka, V., Müller, E., Hössinger, A., Sigg, H., Selberherr, S., Weinbub, J., Camarda, M., & Grossner, U. (2019). Surface Morphology of 4H-SiC After Thermal Oxidation. Materials Science Forum, 963, 180–183. https://doi.org/10.4028/www.scientific.net/msf.963.180 ( reposiTUm)

Medina-Bailon, C., Sadi, T., Nedjalkov, M., Carrillo-Nuñez, H., Lee, J., Badami, O., Georgiev, V., Selberherr, S., & Asenov, A. (2019). Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism. IEEE Electron Device Letters, 40(10), 1571–1574. https://doi.org/10.1109/led.2019.2934349 ( reposiTUm)

Sverdlov, V., Makarov, A., & Selberherr, S. (2019). Two-Pulse Sub-ns Switching Scheme for Advanced Spin-Orbit Torque MRAM. Solid-State Electronics, 155, 49–56. https://doi.org/10.1016/j.sse.2019.03.010 ( reposiTUm)

Toifl, A., Simonka, V., Hössinger, A., Selberherr, S., Grasser, T., & Weinbub, J. (2019). Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics. IEEE Transactions on Electron Devices, 66(7), 3060–3065. https://doi.org/10.1109/ted.2019.2916929 ( reposiTUm)

Lahlalia, A., Le Neel, O., Shankar, R., Selberherr, S., & Filipovic, L. (2019). Improved Sensing Capability of Integrated Semiconducting Metal Oxide Gas Sensor Devices. Sensors, 19(2), 374. https://doi.org/10.3390/s19020374 ( reposiTUm)

Sadi, T., Medina-Bailon, C., Nedjalkov, M., Lee, J., Badami, O., Berrada, S., Carillo-Nunez, H., Georgiev, V., Selberherr, S., & Asenov, A. (2019). Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors. Materials, 12(1), 124. https://doi.org/10.3390/ma12010124 ( reposiTUm)

Klemenschits, X., Selberherr, S., & Filipovic, L. (2019). Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review. Micromachines, 105–135. http://hdl.handle.net/20.500.12708/30045 ( reposiTUm)

Šimonka, V., Hössinger, A., Weinbub, J., & Selberherr, S. (2018). Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide. Materials Science Forum, 924, 192–195. https://doi.org/10.4028/www.scientific.net/msf.924.192 ( reposiTUm)

Simonka, V., Hössinger, A., Weinbub, J., & Selberherr, S. (2018). Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon Carbide. IEEE Transactions on Electron Devices, 65(2), 674–679. https://doi.org/10.1109/ted.2017.2786086 ( reposiTUm)

Lahlalia, A., Filipovic, L., & Selberherr, S. (2018). Modeling and Simulation of Novel Semiconducting Metal Oxide Gas Sensors for Wearable Devices. IEEE Sensors Journal, 18(5), 1960–1970. https://doi.org/10.1109/jsen.2018.2790001 ( reposiTUm)

Nedjalkov, M., Ellinghaus, P., Weinbub, J., Sadi, T., Asenov, A., Dimov, I., & Selberherr, S. (2018). Stochastic Analysis of Surface Roughness Models in Quantum Wires. Computer Physics Communications, 228, 30–37. https://doi.org/10.1016/j.cpc.2018.03.010 ( reposiTUm)

Šimonka, V., Toifl, A., Hössinger, A., Selberherr, S., & Weinbub, J. (2018). Transient Model for Electrical Activation of Aluminium and Phosphorus-Implanted Silicon Carbide. Journal of Applied Physics, 123(23), 235701. https://doi.org/10.1063/1.5031185 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2018). Demands For Spin-based Nonvolatility In Emerging Digital Logic And Memory Devices For Low Power Computing. Facta Universitatis. Series Electronics and Energetics, 31(4), 529–545. https://doi.org/10.2298/fuee1804529s ( reposiTUm)

Meller, G., & Selberherr, S. (2018). Simulation of Injection Currents into Disordered Molecular Conductors. Materials Today: Proceedings, 5(9), 17472–17477. https://doi.org/10.1016/j.matpr.2018.06.051 ( reposiTUm)

Sverdlov, V., Makarov, A., & Selberherr, S. (2018). Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell without External Magnetic Field. Journal on Systemics, Cybernetics and Informatics, 16(2), 55–59. http://hdl.handle.net/20.500.12708/144476 ( reposiTUm)

Gnam, L., Manstetten, P., Hössinger, A., Selberherr, S., & Weinbub, J. (2018). Accelerating Flux Calculations Using Sparse Sampling. Micromachines, 9(11), 1–18. https://doi.org/10.3390/mi9110550 ( reposiTUm)

Klemenschits, X., Selberherr, S., & Filipovic, L. (2018). Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review. Micromachines, 9(12), Article 631. https://doi.org/10.3390/mi9120631 ( reposiTUm)

Šimonka, V., Hössinger, A., Weinbub, J., & Selberherr, S. (2017). ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation. The Journal of Physical Chemistry A, 121(46), 8791–8798. https://doi.org/10.1021/acs.jpca.7b08983 ( reposiTUm)

Manstetten, P., Weinbub, J., Hössinger, A., & Selberherr, S. (2017). Using Temporary Explicit Meshes for Direct Flux Calculation on Implicit Surfaces. Procedia Computer Science, 108, 245–254. https://doi.org/10.1016/j.procs.2017.05.067 ( reposiTUm)

Ellinghaus, P., Weinbub, J., Nedjalkov, M., & Selberherr, S. (2017). Analysis of Lense-Governed Wigner Signed Particle Quantum Dynamics. Physica Status Solidi (RRL) - Rapid Research Letters, 11(7), 1700102-1-1700102–1700105. http://hdl.handle.net/20.500.12708/146705 ( reposiTUm)

Šimonka, V., Nawratil, G., Hössinger, A., Weinbub, J., & Selberherr, S. (2017). Anisotropic Interpolation Method of Silicon Carbide Oxidation Growth Rates for Three-Dimensional Simulation. Solid-State Electronics, 128, 135–140. https://doi.org/10.1016/j.sse.2016.10.032 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2017). Editorial: Special Issue of Solid-State Electronics, dedicated to EUROSOI-ULIS 2016. Solid-State Electronics, 128, 1–2. https://doi.org/10.1016/j.sse.2016.10.015 ( reposiTUm)

Manstetten, P., Filipovic, L., Hössinger, A., Weinbub, J., & Selberherr, S. (2017). Framework to Model Neutral Particle Flux in Convex High Aspect Ratio Structures using One-Dimensional Radiosity. Solid-State Electronics, 128, 141–147. https://doi.org/10.1016/j.sse.2016.10.029 ( reposiTUm)

Sverdlov, V., Weinbub, J., & Selberherr, S. (2017). Spintronics as a Non-Volatile Complement to Modern Microelectronics. Informacije Midem - Journal of Microelectronics Electronic Components and Materials, 47(4), 195–210. http://hdl.handle.net/20.500.12708/147561 ( reposiTUm)

Filipovic, L., & Selberherr, S. (2016). Stress in Three-Dimensionally Integrated Sensor Systems. Microelectronics Reliability, 61, 3–10. https://doi.org/10.1016/j.microrel.2015.09.013 ( reposiTUm)

Makarov, A., Windbacher, T., Sverdlov, V., & Selberherr, S. (2016). CMOS-Compatible Spintronic Devices: A Review. Semiconductor Science and Technology, 31(11), 113006. https://doi.org/10.1088/0268-1242/31/11/113006 ( reposiTUm)

Papaleo, S., Zisser, W. H., Singulani, A. P., Ceric, H., & Selberherr, S. (2016). Stress Evolution During Nanoindentation in Open TSVs. IEEE Transactions on Device and Materials Reliability, 16(4), 470–474. https://doi.org/10.1109/tdmr.2016.2622727 ( reposiTUm)

Filipovic, L., & Selberherr, S. (2016). Stress Considerations for System-on-Chip Gas Sensor Integration in CMOS Technology. IEEE Transactions on Device and Materials Reliability, 16(4), 483–495. https://doi.org/10.1109/tdmr.2016.2625461 ( reposiTUm)

Rupp, K., Tillet, P., Rudolf, F., Weinbub, J., Morhammer, A., Grasser, T., Jüngel, A., & Selberherr, S. (2016). ViennaCL---Linear Algebra Library for Multi- and Many-Core Architectures. SIAM Journal on Scientific Computing, 38(5), S412–S439. https://doi.org/10.1137/15m1026419 ( reposiTUm)

Šimonka, V., Hössinger, A., Weinbub, J., & Selberherr, S. (2016). Growth Rates of Dry Thermal Oxidation of 4H-Silicon Carbide. Journal of Applied Physics, 120(13), 135705. https://doi.org/10.1063/1.4964688 ( reposiTUm)

Ghosh, J., Osintsev, D., Sverdlov, V., & Selberherr, S. (2016). Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stress. Journal of Nano Research, 39, 34–42. https://doi.org/10.4028/www.scientific.net/jnanor.39.34 ( reposiTUm)

Windbacher, T., Makarov, A., Sverdlov, V., & Selberherr, S. (2015). Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop. Solid-State Electronics, 108, 2–7. https://doi.org/10.1016/j.sse.2014.12.023 ( reposiTUm)

Windbacher, T., Ghosh, J., Makarov, A., Sverdlov, V., & Selberherr, S. (2015). Modelling of Multipurpose Spintronic Devices. International Journal of Nanotechnology, 12(3/4), 313. https://doi.org/10.1504/ijnt.2015.067215 ( reposiTUm)

Ellinghaus, P., Weinbub, J., Nedjalkov, M., Selberherr, S., & Dimov, I. (2015). Distributed-Memory Parallelization of the Wigner Monte Carlo Method Using Spatial Domain Decomposition. Journal of Computational Electronics, 14(1), 151–162. https://doi.org/10.1007/s10825-014-0635-3 ( reposiTUm)

Filipovic, L., & Selberherr, S. (2015). Performance and Stress Analysis of Metal Oxide Films for CMOS-Integrated Gas Sensors. Sensors, 15(4), 7206–7227. https://doi.org/10.3390/s150407206 ( reposiTUm)

Dimov, I., Nedjalkov, M., Sellier, J.-M., & Selberherr, S. (2015). Boundary Conditions and the Wigner Equation Solution. Journal of Computational Electronics, 14(4), 859–863. https://doi.org/10.1007/s10825-015-0720-2 ( reposiTUm)

Nedjalkov, M., Weinbub, J., Ellinghaus, P., & Selberherr, S. (2015). The Wigner Equation in the Presence of Electromagnetic Potentials. Journal of Computational Electronics, 14(4), 888–893. https://doi.org/10.1007/s10825-015-0732-y ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2015). Silicon Spintronics: Progress and Challenges. Physics Reports, 585, 1–40. https://doi.org/10.1016/j.physrep.2015.05.002 ( reposiTUm)

Sellier, J. M., Nedjalkov, M., Dimov, I., & Selberherr, S. (2015). A Comparison of Approaches for the Solution of the Wigner Equation. Mathematics and Computers in Simulation, 107, 108–119. https://doi.org/10.1016/j.matcom.2014.06.001 ( reposiTUm)

Baer, E., Evanschitzky, P., Lorenz, J., Roger, F., Minixhofer, R., Filipovic, L., de Orio, R. L., & Selberherr, S. (2015). Coupled Simulation to Determine the Impact of Across Wafer Variations in Oxide PECVD on Electrical and Reliability Parameters of Through-Silicon Vias. Microelectronic Engineering, 137, 141–145. https://doi.org/10.1016/j.mee.2014.11.014 ( reposiTUm)

Weinbub, J., Wastl, M., Rupp, K., Rudolf, F., & Selberherr, S. (2015). ViennaMaterials - A Dedicated Material Library for Computational Science and Engineering. Applied Mathematics and Computation, 267, 282–293. https://doi.org/10.1016/j.amc.2015.03.094 ( reposiTUm)

Rudolf, F., Rupp, K., Weinbub, J., Morhammer, A., & Selberherr, S. (2015). Transformation Invariant Local Element Size Specification. Applied Mathematics and Computation, 267, 195–206. https://doi.org/10.1016/j.amc.2015.04.027 ( reposiTUm)

Filipovic, L., Singulani, A. P., Roger, F., Carniello, S., & Selberherr, S. (2015). Intrinsic Stress Analysis of Tungsten-Lined Open TSVs. Microelectronics Reliability, 55(9–10), 1843–1848. https://doi.org/10.1016/j.microrel.2015.06.014 ( reposiTUm)

Axelevitch, A., Palankovski, V., Selberherr, S., & Golan, G. (2015). Investigation of Novel Silicon PV Cells of a Lateral Type. Silicon, 7(3), 283–291. https://doi.org/10.1007/s12633-014-9227-x ( reposiTUm)

Osintsev, D., Sverdlov, V., & Selberherr, S. (2015). Electron Mobility and Spin Lifetime Enhancement in Strained Ultra-Thin Silicon Films. Solid-State Electronics, 112, 46–50. https://doi.org/10.1016/j.sse.2015.02.007 ( reposiTUm)

Ghosh, J., Osintsev, D., Sverdlov, V., & Selberherr, S. (2015). Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures. Microelectronic Engineering, 147, 89–91. https://doi.org/10.1016/j.mee.2015.04.072 ( reposiTUm)

Mahmoudi, H., Windbacher, T., Sverdlov, V., & Selberherr, S. (2014). Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates. Advanced Materials Research, 854, 89–95. https://doi.org/10.4028/www.scientific.net/amr.854.89 ( reposiTUm)

Ghosh, J., Sverdlov, V., Windbacher, T., & Selberherr, S. (2014). Spin injection and diffusion in silicon based devices from a space charge layer. Journal of Applied Physics, 115(17), 17C503. https://doi.org/10.1063/1.4856056 ( reposiTUm)

Filipovic, L., Selberherr, S., Mutinati, G. C., Brunet, E., Steinhauer, S., Köck, A., Teva, J., Kraft, J., Siegert, J., & Schrank, F. (2014). Methods of simulating thin film deposition using spray pyrolysis techniques. Microelectronic Engineering, 117, 57–66. https://doi.org/10.1016/j.mee.2013.12.025 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2014). Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer. International Journal of High Speed Electronics and Systems, 23(03n04), 1450014. https://doi.org/10.1142/s0129156414500141 ( reposiTUm)

Ceric, H., Orio, R., Zisser, W., & Selberherr, S. (2014). Microstructural Impact on Electromigration: A TCAD Study. Facta Universitatis - Series: Electronics and Energetics, 27(1), 1–11. https://doi.org/10.2298/fuee1401001c ( reposiTUm)

Sellier, J. M., Nedjalkov, M., Dimov, I., & Selberherr, S. (2014). A Benchmark Study of the Wigner Monte Carlo Method. Monte Carlo Methods and Applications, 20(1). https://doi.org/10.1515/mcma-2013-0018 ( reposiTUm)

Filipovic, L., Selberherr, S., Mutinati, G. C., Brunet, E., Steinhauer, S., Köck, A., Teva, J., Kraft, J., Siegert, J., Schrank, F., Gspan, C., & Grogger, W. (2014). Modeling the Growth of Tin Dioxide Using Spray Pyrolysis Deposition for Gas Sensor Applications. IEEE Transactions on Semiconductor Manufacturing, 27(2), 269–277. https://doi.org/10.1109/tsm.2014.2298883 ( reposiTUm)

Weinbub, J., Rupp, K., & Selberherr, S. (2014). ViennaX: A Parallel Plugin Execution Framework for Scientific Computing. Engineering with Computers, 30(4), 651–668. https://doi.org/10.1007/s00366-013-0314-1 ( reposiTUm)

Filipovic, L., & Selberherr, S. (2014). The Effects of Etching and Deposition on the Performance and Stress Evolution of Open Through Silicon Vias. Microelectronics Reliability, 54(9–10), 1953–1958. https://doi.org/10.1016/j.microrel.2014.07.014 ( reposiTUm)

Zisser, W. H., Ceric, H., Weinbub, J., & Selberherr, S. (2014). Electromigration Reliability of Open TSV Structures. Microelectronics Reliability, 54(9–10), 2133–2137. https://doi.org/10.1016/j.microrel.2014.07.099 ( reposiTUm)

Ghosh, J., Windbacher, T., Sverdlov, V., & Selberherr, S. (2014). Spin Injection in a Semiconductor Through a Space-Charge Layer. Solid-State Electronics, 101, 116–121. https://doi.org/10.1016/j.sse.2014.06.035 ( reposiTUm)

Rudolf, F., Weinbub, J., Rupp, K., & Selberherr, S. (2014). The Meshing Framework ViennaMesh for Finite Element Applications. Journal of Computational and Applied Mathematics, 270, 166–177. https://doi.org/10.1016/j.cam.2014.02.005 ( reposiTUm)

Weinbub, J., Rupp, K., & Selberherr, S. (2014). Highly Flexible and Reusable Finite Element Simulations with ViennaX. Journal of Computational and Applied Mathematics, 270, 484–495. https://doi.org/10.1016/j.cam.2013.12.013 ( reposiTUm)

Sellier, J. M., Amoroso, S. M., Nedjalkov, M., Selberherr, S., Asenov, A., & Dimov, I. (2014). Electron Dynamics in Nanoscale Transistors by Means of Wigner and Boltzmann Approaches. PHYSICA A-STATISTICAL MECHANICS AND ITS APPLICATIONS, 398, 194–198. https://doi.org/10.1016/j.physa.2013.12.045 ( reposiTUm)

Windbacher, T., Makarov, A., Mahmoudi, H., Sverdlov, V., & Selberherr, S. (2014). Novel Bias-Field-Free Spin Transfer Oscillator. Journal of Applied Physics, 115(17), 17C901. https://doi.org/10.1063/1.4862936 ( reposiTUm)

Osintsev, D., Sverdlov, V., & Selberherr, S. (2014). Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films. Advanced Materials Research, 854, 29–34. https://doi.org/10.4028/www.scientific.net/amr.854.29 ( reposiTUm)

Filipovic, L., Selberherr, S., Mutinati, G. C., Brunet, E., Seinhauer, S., Köck, A., Teva, J., Kraft, J., Siegert, J., Schrank, F., Gspan, C., & Grogger, W. (2013). A Method for Simulating Spray Pyrolysis Deposition in the Level Set Framework. Engineering Letters, 21(4), 224–240. http://hdl.handle.net/20.500.12708/155538 ( reposiTUm)

Windbacher, T., Mahmoudi, H., Makarov, A., Sverdlov, V., & Selberherr, S. (2013). Multiple Purpose Spin Transfer Torque Operated Devices. Facta Universitatis - Series: Electronics and Energetics, 26(3), 227–238. https://doi.org/10.2298/fuee1303227w ( reposiTUm)

Schwaha, P., Querlioz, D., Dollfus, P., Saint-Martin, J., Nedjalkov, M., & Selberherr, S. (2013). Decoherence Effects in the Wigner Function Formalism. Journal of Computational Electronics, 12(3), 388–396. https://doi.org/10.1007/s10825-013-0480-9 ( reposiTUm)

Nedjalkov, M., Selberherr, S., Ferry, D. K., Vasileska, D., Dollfus, P., Querlioz, D., Dimov, I., & Schwaha, P. (2013). Physical Scales in the Wigner-Boltzmann Equation. Annals of Physics, 328, 220–237. https://doi.org/10.1016/j.aop.2012.10.001 ( reposiTUm)

Mahmoudi, H., Windbacher, T., Sverdlov, V., & Selberherr, S. (2013). Reliability Analysis and Comparison of Implication and Reprogrammable Logic Gates in Magnetic Tunnel Junction Logic Circuits. IEEE Transactions on Magnetics, 49(12), 5620–5628. https://doi.org/10.1109/tmag.2013.2278683 ( reposiTUm)

Singulani, A. P., Ceric, H., & Selberherr, S. (2013). Stress Evolution in the Metal Layers of TSVs with Bosch Scallops. Microelectronics Reliability, 53(9–11), 1602–1605. https://doi.org/10.1016/j.microrel.2013.07.132 ( reposiTUm)

Sellier, J. M., Nedjalkov, M., Dimov, I., & Selberherr, S. (2013). Decoherence and Time Reversibility: The Role of Randomness at Interfaces. Journal of Applied Physics, 114(17), 174902. https://doi.org/10.1063/1.4828736 ( reposiTUm)

Mahmoudi, H., Windbacher, T., Sverdlov, V., & Selberherr, S. (2013). Implication Logic Gates Using Spin-Transfer-Torque-Operated Magnetic Tunnel Junctions for Intrinsic Logic-In-Memory. Solid-State Electronics, 84, 191–197. https://doi.org/10.1016/j.sse.2013.02.017 ( reposiTUm)

Mahmoudi, H., Sverdlov, V., & Selberherr, S. (2013). Influence of Geometry on the Memristive Behavior of Domain Wall Spintronic Memristors and its Applications for Measurement. Journal of Superconductivity and Novel Magnetism, 26(5), 1745–1748. https://doi.org/10.1007/s10948-012-2034-y ( reposiTUm)

Nedjalkov, M., Schwaha, P., Selberherr, S., Sellier, J. M., & Vasileska, D. (2013). Wigner Quasi-Particle Attributes - An Asymptotic Perspective. Applied Physics Letters, 102(16), 163113. https://doi.org/10.1063/1.4802931 ( reposiTUm)

Filipovic, L., & Selberherr, S. (2013). A Method for Simulating Atomic Force Microscope Nanolithography in the Level Set Framework. Microelectronic Engineering, 107, 23–32. https://doi.org/10.1016/j.mee.2013.02.083 ( reposiTUm)

Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., & Selberherr, S. (2013). Subband Splitting and Surface Roughness Induced Spin Relaxation in (001) Silicon SOI MOSFETs. Solid-State Electronics, 90, 34–38. https://doi.org/10.1016/j.sse.2013.02.055 ( reposiTUm)

Osintsev, D., Sverdlov, V., Makarov, A., & Selberherr, S. (2013). Current and Conductance Modulation at Elevated Temperature in Silicon and InAs-based Spin Field-Effect Transistors. SAINS MALAYSIANA, 42(2), 205–211. http://hdl.handle.net/20.500.12708/154721 ( reposiTUm)

Windbacher, T., Triebl, O., Osintsev, D., Makarov, A., Sverdlov, V., & Selberherr, S. (2013). Simulation Study of an Electrically Read- and Writable Magnetic Logic Gate. Microelectronic Engineering, 112, 188–192. https://doi.org/10.1016/j.mee.2012.12.030 ( reposiTUm)

Ceric, H., de Orio, R. L., & Selberherr, S. (2012). Interconnect Reliability Dependence on Fast Diffusivity Paths. Microelectronics Reliability, 52(8), 1532–1538. https://doi.org/10.1016/j.microrel.2011.09.035 ( reposiTUm)

de Orio, R. L., Ceric, H., & Selberherr, S. (2012). Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via. Microelectronics Reliability, 52(9–10), 1981–1986. https://doi.org/10.1016/j.microrel.2012.07.021 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2012). Emerging Memory Technologies: Trends, Challenges, and Modeling Methods. Microelectronics Reliability, 52(4), 628–634. https://doi.org/10.1016/j.microrel.2011.10.020 ( reposiTUm)

Vitanov, S., Palankovski, V., Maroldt, S., Quay, R., Murad, S., Rödle, T., & Selberherr, S. (2012). Physics-Based Modeling of GaN HEMTs. IEEE Transactions on Electron Devices, 59(3), 685–693. https://doi.org/10.1109/ted.2011.2179118 ( reposiTUm)

Yazdanpanah, A., Pourfath, M., Fathipour, M., Kosina, H., & Selberherr, S. (2012). A Numerical Study of Line-Edge Roughness Scattering in Graphene Nanoribbons. IEEE Transactions on Electron Devices, 59(2), 433–440. https://doi.org/10.1109/ted.2011.2173690 ( reposiTUm)

Osintsev, D., Sverdlov, V., Stanojević, Z., Makarov, A., & Selberherr, S. (2012). Temperature Dependence of the Transport Properties of Spin Field-Effect Transistors Built with InAs and Si Channels. Solid-State Electronics, 71, 25–29. https://doi.org/10.1016/j.sse.2011.10.015 ( reposiTUm)

Makarov, A., Sverdlov, V., Osintsev, D., & Selberherr, S. (2012). Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic Modeling. IEEE Transactions on Magnetics, 48(4), 1289–1292. https://doi.org/10.1109/tmag.2011.2173565 ( reposiTUm)

Lorenz, J., Bär, E., Clees, T., Evanschitzky, P., Jancke, R., Kampen, C., Paschen, U., Salzig, C., & Selberherr, S. (2011). Hierarchical Simulation of Process Variations and Their Impact on Circuits and Systems: Results. IEEE Transactions on Electron Devices, 58(8), 2227–2234. https://doi.org/10.1109/ted.2011.2150226 ( reposiTUm)

Lorenz, J., Bär, E., Clees, T., Jancke, R., Salzig, C., & Selberherr, S. (2011). Hierarchical Simulation of Process Variations and Their Impact on Circuits and Systems: Methodology. IEEE Transactions on Electron Devices, 58(8), 2218–2226. https://doi.org/10.1109/ted.2011.2150225 ( reposiTUm)

Sangiorgi, E., Asenov, A., Bennett, H. S., Dutton, R. W., Esseni, D., Giles, M. D., Hane, M., Nishi, K., Ranaweera, J., & Selberherr, S. (2011). Foreword Special Issue on Characterization of Nano CMOS Variability by Simulation and Measurements. IEEE Transactions on Electron Devices, 58(8), 2190–2196. https://doi.org/10.1109/ted.2011.2160884 ( reposiTUm)

Ceric, H., & Selberherr, S. (2011). Electromigration in Submicron Interconnect Features of Integrated Circuits. Materials Science and Engineering: R: Reports, 71(5–6), 53–86. https://doi.org/10.1016/j.mser.2010.09.001 ( reposiTUm)

Rupp, K., & Selberherr, S. (2011). The Economic Limit to Moore’s Law. IEEE Transactions on Semiconductor Manufacturing, 24(1), 1–4. https://doi.org/10.1109/tsm.2010.2089811 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2011). Stochastic Model of the Resistive Switching Mechanism in Bipolar Resistive Random Access Memory: Monte Carlo Simulations. Journal of Vacuum Science & Technology B, 29(1), 01AD03. https://doi.org/10.1116/1.3521503 ( reposiTUm)

de Orio, R. L., Ceric, H., & Selberherr, S. (2011). A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects. Microelectronics Reliability, 51(9–11), 1573–1577. https://doi.org/10.1016/j.microrel.2011.07.049 ( reposiTUm)

Cervenka, J., Kosina, H., Selberherr, S., Zhang, J., Hrauda, N., Stangl, J., Bauer, G., Vastola, G., Marzegalli, A., Montalenti, F., & Miglio, L. (2011). Strained MOSFETs on Ordered SiGe Dots. Solid-State Electronics, 65–66, 81–87. https://doi.org/10.1016/j.sse.2011.06.041 ( reposiTUm)

Goharrizi, A. Y., Pourfath, M., Fathipour, M., Kosina, H., & Selberherr, S. (2011). An Analytical Model for Line-Edge Roughness Limited Mobility of Graphene Nanoribbons. IEEE Transactions on Electron Devices, 58(11), 3725–3735. https://doi.org/10.1109/ted.2011.2163719 ( reposiTUm)

Baumgartner, O., Sverdlov, V., Windbacher, T., & Selberherr, S. (2011). Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Thin Films. IEEE Transactions on Nanotechnology, 10(4), 737–743. https://doi.org/10.1109/tnano.2010.2074211 ( reposiTUm)

Manavizadeh, N., Raissi, F., Soleimani, E. A., Pourfath, M., & Selberherr, S. (2011). Performance Assessment of Nanoscale Field Effect Diodes. IEEE Transactions on Electron Devices, 58(8), 2378–2384. https://doi.org/10.1109/ted.2011.2152844 ( reposiTUm)

Makarov, A., Sverdlov, V., Osintsev, D., & Selberherr, S. (2011). Reduction of Switching Time in Pentalayer Magnetic Tunnel Junctions with a Composite-Free Layer. Physica Status Solidi (RRL) - Rapid Research Letters, 5(12), 420–422. http://hdl.handle.net/20.500.12708/162501 ( reposiTUm)

Ertl, O., & Selberherr, S. (2010). Three-Dimensional Level Set Based Bosch Process Simulations using Ray Tracing for Flux Calculation. Microelectronic Engineering, 87(1), 20–29. https://doi.org/10.1016/j.mee.2009.05.011 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2010). Stochastic Modeling of Bipolar Resistive Switching in Metal-Oxide based Memory by Monte Carlo Technique. Journal of Computational Electronics, 9(3–4), 146–152. https://doi.org/10.1007/s10825-010-0317-8 ( reposiTUm)

Windbacher, T., Sverdlov, V., Baumgartner, O., & Selberherr, S. (2010). Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 1 Analytical Consideration and Strain-Induced Valley Splitting. Solid-State Electronics, 54(2), 137–142. https://doi.org/10.1016/j.sse.2009.12.008 ( reposiTUm)

Rupp, K., & Selberherr, S. (2010). The Economic Limit to Moore’s Law [Point of View]. Proceedings of the IEEE, 98(3), 351–353. https://doi.org/10.1109/jproc.2010.2040205 ( reposiTUm)

Neophytou, N., Wagner, M., Kosina, H., & Selberherr, S. (2010). Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model. Journal of Electronic Materials, 39(9), 1902–1908. https://doi.org/10.1007/s11664-009-1035-5 ( reposiTUm)

Selberherr, S. (2010). Physically based Models of Electromigration: From Black’s Equation to Modern TCAD Models. Microelectronics Reliability, 50(6), 775–789. https://doi.org/10.1016/j.microrel.2010.01.007 ( reposiTUm)

Sverdlov, V., Baumgartner, O., Windbacher, T., & Selberherr, S. (2009). Modeling of Modern MOSFETs with Strain. Journal of Computational Electronics, 8(3–4), 192–208. https://doi.org/10.1007/s10825-009-0291-1 ( reposiTUm)

Kosina, H., & Selberherr, S. (2009). Guest Editorial. Journal of Computational Electronics, 8(3–4), 173. https://doi.org/10.1007/s10825-009-0302-2 ( reposiTUm)

Schwaha, P., Heinzl, R., Stimpfl, F., & Selberherr, S. (2009). Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages for High-Performance Applications. International Journal of Parallel, Emergent and Distributed Systems, 24(6), 539–549. https://doi.org/10.1080/17445760902758552 ( reposiTUm)

Heinzl, R., Schwaha, P., Stimpfl, F., & Selberherr, S. (2009). GUIDE: Parallel Library-Centric Application Design by a Generic Scientific Simulation Environment. International Journal of Parallel, Emergent and Distributed Systems, 24(6), 505–520. https://doi.org/10.1080/17445760902758545 ( reposiTUm)

Sverdlov, V. A., Windbacher, T., Schanovsky, F., & Selberherr, S. (2009). Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress. Journal of Integrated Circuits and Systems, 4(2), 55–60. https://doi.org/10.29292/jics.v4i2.298 ( reposiTUm)

De Orio, R. L., Ceric, H., & Selberherr, S. (2009). Analysis of Electromigration in Dual-Damascene Interconnect Structures. Journal of Integrated Circuits and Systems, 4(2), 67–72. https://doi.org/10.29292/jics.v4i2.300 ( reposiTUm)

Ertl, O., & Selberherr, S. (2009). A Fast Level Set Framework for Large Three-Dimensional Topography Simulations. Computer Physics Communications, 180(8), 1242–1250. https://doi.org/10.1016/j.cpc.2009.02.002 ( reposiTUm)

Poschalko, C., & Selberherr, S. (2009). Cavity Model for the Slot Radiation of an Enclosure Excited by Printed Circuit Board Traces With Different Loads. IEEE Transactions on Electromagnetic Compatibility, 51(1), 18–24. https://doi.org/10.1109/temc.2008.2008815 ( reposiTUm)

Ceric, H., de Orio, R. L., Cervenka, J., & Selberherr, S. (2009). A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects. IEEE Transactions on Device and Materials Reliability, 9(1), 9–19. https://doi.org/10.1109/tdmr.2008.2000893 ( reposiTUm)

Ceric, H., & Selberherr, S. (2009). Editorial Preface to the Special Section on Electromigration Published in March 2009. IEEE Transactions on Device and Materials Reliability, 9(2), 103–103. https://doi.org/10.1109/tdmr.2009.2020086 ( reposiTUm)

Ungersboeck, E., Gös, W., Dhar, S., Kosina, H., & Selberherr, S. (2008). The Effect of Uniaxial Stress on Band Structure and Electron Mobility of Silicon. Mathematics and Computers in Simulation, 79(4), 1071–1077. https://doi.org/10.1016/j.matcom.2007.10.004 ( reposiTUm)

Sverdlov, V., Karlowatz, G., Dhar, S., Kosina, H., & Selberherr, S. (2008). Two-Band k.p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility. Solid-State Electronics, 52(10), 1563–1568. https://doi.org/10.1016/j.sse.2008.06.019 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2008). Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond. Solid-State Electronics, 52(12), 1861–1866. https://doi.org/10.1016/j.sse.2008.06.054 ( reposiTUm)

Pourfath, M., Kosina, H., & Selberherr, S. (2008). Numerical Study of Quantum Transport in Carbon Nanotube Transistors. Mathematics and Computers in Simulation, 79(4), 1051–1059. https://doi.org/10.1016/j.matcom.2007.09.004 ( reposiTUm)

Sverdlov, V., Ungersboeck, E., Kosina, H., & Selberherr, S. (2008). Current Transport Models for Nanoscale Semiconductor Devices. Materials Science and Engineering: R: Reports, 58(6), 228–270. https://doi.org/10.1016/j.mser.2007.11.001 ( reposiTUm)

Cervenka, J., Ceric, H., & Selberherr, S. (2008). Three-Dimensional Simulation of Sacrificial Etching. Microsystem Technologies, 14(4–5), 665–671. https://doi.org/10.1007/s00542-007-0491-1 ( reposiTUm)

Sverdlov, V., Kosina, H., & Selberherr, S. (2008). Electron Subband Dispersions in Ultra-Thin Silicon Films from a Two-Band k·p Theory. Journal of Computational Electronics, 7(3), 164–167. https://doi.org/10.1007/s10825-008-0177-7 ( reposiTUm)

Pourfath, M., Kosina, H., & Selberherr, S. (2008). The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance. Journal of Physics: Conference Series, 109, 012029. https://doi.org/10.1088/1742-6596/109/1/012029 ( reposiTUm)

Lacerda de Orio, R., Ceric, H., & Selberherr, S. (2008). Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress. Journal of Computational Electronics, 7(3), 128–131. https://doi.org/10.1007/s10825-008-0211-9 ( reposiTUm)

Movahhedi, M., Abdipour, A., Nentchev, A., Dehghan, M., & Selberherr, S. (2007). Alternating-Direction Implicit Formulation of the Finite-Element Time-Domain Method. IEEE Transactions on Microwave Theory and Techniques, 55(6), 1322–1331. https://doi.org/10.1109/tmtt.2007.897777 ( reposiTUm)

Kosina, H., & Selberherr, S. (2007). Editorial. Journal of Computational Electronics, 5(4), 283–283. https://doi.org/10.1007/s10825-006-0001-1 ( reposiTUm)

Sverdlov, V., Ungersboeck, E., Kosina, H., & Selberherr, S. (2007). Volume Inversion Mobility in SOI MOSFETs for Different Thin Body Orientations. Solid-State Electronics, 51(2), 299–305. https://doi.org/10.1016/j.sse.2007.01.022 ( reposiTUm)

Pourfath, M., Kosina, H., & Selberherr, S. (2007). Tunneling CNTFETs. Journal of Computational Electronics, 6(1–3), 243–246. https://doi.org/10.1007/s10825-006-0099-1 ( reposiTUm)

Pourfath, M., Kosina, H., & Selberherr, S. (2007). Dissipative Transport in CNTFETs. Journal of Computational Electronics, 6(1–3), 321–324. https://doi.org/10.1007/s10825-006-0113-7 ( reposiTUm)

Dhar, S., Ungersböck, S. E., Kosina, H., Grasser, T., & Selberherr, S. (2007). Electron Mobility Model for 〈110〉 Stressed Silicon Including Strain-Dependent Mass. IEEE Transactions on Nanotechnology, 6(1), 97–100. https://doi.org/10.1109/tnano.2006.888533 ( reposiTUm)

Grasser, T., & Selberherr, S. (2007). Editorial. Microelectronics Reliability, 47(6), 839–840. https://doi.org/10.1016/j.microrel.2006.10.005 ( reposiTUm)

Ungersboeck, E., Dhar, S., Karlowatz, G., Kosina, H., & Selberherr, S. (2007). Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon. Journal of Computational Electronics, 6(1–3), 55–58. https://doi.org/10.1007/s10825-006-0047-0 ( reposiTUm)

Ungersboeck, E., Dhar, S., Karlowatz, G., Sverdlov, V., Kosina, H., & Selberherr, S. (2007). The Effect of General Strain on the Band Structure and Electron Mobility of Silicon. IEEE Transactions on Electron Devices, 54(9), 2183–2190. https://doi.org/10.1109/ted.2007.902880 ( reposiTUm)

Krishnamohan, T., Jungemann, C., Kim, D., Ungersboeck, E., Selberherr, S., Pham, A.-T., Meinerzhagen, B., Wong, P., Nishi, Y., & Saraswat, K. C. (2007). High Performance, Uniaxially-Strained, Silicon and Germanium, Double-Gate p-MOSFETs. Microelectronic Engineering, 84(9–10), 2063–2066. https://doi.org/10.1016/j.mee.2007.04.085 ( reposiTUm)

Wittmann, R., & Selberherr, S. (2007). A Study of Ion Implantation into Crystalline Germanium. Solid-State Electronics, 51(6), 982–988. https://doi.org/10.1016/j.sse.2007.03.019 ( reposiTUm)

Sangiorgi, E., Asenov, A., Bennett, H. S., Dutton, R. W., Esseni, D., Giles, M. D., Hane, M., Jungemann, C., Nishi, K., Selberherr, S., & Takagi, S. (2007). Foreword Special Issue on Simulation and Modeling of Nanoelectronics Devices. IEEE Transactions on Electron Devices, 54(9), 2072–2078. https://doi.org/10.1109/ted.2007.905342 ( reposiTUm)

Grasser, T., & Selberherr, S. (2007). Modeling of Negative Bias Temperature Instability. Journal of Telecommunications and Information Technology, 7(2), 92–102. http://hdl.handle.net/20.500.12708/168523 ( reposiTUm)

Heitzinger, C., Ringhofer, C., & Selberherr, S. (2007). Finite Difference Solutions of the Nonlinear Schrödinger Equation and their Conservation of Physical Quantities. Communications in Mathematical Sciences, 5(4), 779–788. https://doi.org/10.4310/cms.2007.v5.n4.a2 ( reposiTUm)

Pourfath, M., Kosina, H., & Selberherr, S. (2007). Geometry Optimization for Carbon Nanotube Transistors. Solid-State Electronics, 51(11–12), 1565–1571. https://doi.org/10.1016/j.sse.2007.09.021 ( reposiTUm)

Karner, M., Gehring, A., Wagner, M., Entner, R., Holzer, S., Goes, W., Vasicek, M., Grasser, T., Kosina, H., & Selberherr, S. (2007). VSP - A Gate Stack Analyzer. Microelectronics Reliability, 47(4–5), 704–708. https://doi.org/10.1016/j.microrel.2007.01.059 ( reposiTUm)

Holzer, S., Sheikholeslami, A., Karner, M., Grasser, T., & Selberherr, S. (2007). Comparison of Deposition Models for a TEOS LPCVD Process. Microelectronics Reliability, 47(4–5), 623–625. https://doi.org/10.1016/j.microrel.2007.01.058 ( reposiTUm)

Sheikholeslami, A., Parhami, F., Puchner, H., & Selberherr, S. (2007). Planarization of Silicon Dioxide and Silicon Nitride Passivation Layers. Journal of Physics: Conference Series, 61, 1051–1055. https://doi.org/10.1088/1742-6596/61/1/208 ( reposiTUm)

Movahhedi, M., Abdipour, A., Ceric, H., Sheikholeslami, A., & Selberherr, S. (2007). Optimization of the Perfectly Matched Layer for the Finite-Element Time-Domain Method. IEEE Microwave and Wireless Components Letters, 17(1), 10–12. https://doi.org/10.1109/lmwc.2006.887240 ( reposiTUm)

Karner, M., Gehring, A., Holzer, S., Pourfath, M., Wagner, M., Goes, W., Vasicek, M., Baumgartner, O., Kernstock, C., Schnass, K., Zeiler, G., Grasser, T., Kosina, H., & Selberherr, S. (2007). A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications. Journal of Computational Electronics, 6(1–3), 179–182. https://doi.org/10.1007/s10825-006-0077-7 ( reposiTUm)

Pourfath, M., Kosina, H., & Selberherr, S. (2006). Rigorous Modeling of Carbon Nanotube Transistors. Journal of Physics: Conference Series, 38, 29–32. https://doi.org/10.1088/1742-6596/38/1/008 ( reposiTUm)

Cervenka, J., Wessner, W., Al-Ani, E., Grasser, T., & Selberherr, S. (2006). Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 25(10), 2118–2128. https://doi.org/10.1109/tcad.2006.876514 ( reposiTUm)

Pourfath, M., Kosina, H., & Selberherr, S. (2006). A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors. Journal of Computational Electronics, 5(2–3), 155–159. https://doi.org/10.1007/s10825-006-8836-z ( reposiTUm)

Wessner, W., Cervenka, J., Heitzinger, C., Hossinger, A., & Selberherr, S. (2006). Anisotropic Mesh Refinement for the Simulation of Three-Dimensional Semiconductor Manufacturing Processes. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 25(10), 2129–2139. https://doi.org/10.1109/tcad.2005.862750 ( reposiTUm)

Dhar, S., Kosina, H., Karlowatz, G., Ungersboeck, S. E., Grasser, T., & Selberherr, S. (2006). High-Field Electron Mobility Model for Strained-Silicon Devices. IEEE Transactions on Electron Devices, 53(12), 3054–3062. https://doi.org/10.1109/ted.2006.885639 ( reposiTUm)

Sverdlov, V., Kosina, H., & Selberherr, S. (2006). Modeling Current Transport in Ultra-Scaled Field-Effect Transistors. Microelectronics Reliability, 47(1), 11–19. https://doi.org/10.1016/j.microrel.2006.03.009 ( reposiTUm)

Sverdlov, V., Grasser, T., Kosina, H., & Selberherr, S. (2006). Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices. Journal of Computational Electronics, 5(4), 447–450. https://doi.org/10.1007/s10825-006-0041-6 ( reposiTUm)

Kosina, H., & Selberherr, S. (2006). Device Simulation Demands of Upcoming Microelectronic Devices. International Journal of High Speed Electronics and Systems, 16(01), 115–136. https://doi.org/10.1142/s0129156406003576 ( reposiTUm)

Ungersboeck, E., Pourfath, M., Kosina, H., Gehring, A., Cheong, B.-H., Park, W.-J., & Selberherr, S. (2005). Optimization of Single-Gate Carbon-Nanotube Field-Effect Transistors. IEEE Transactions on Nanotechnology, 4(5), 533–538. https://doi.org/10.1109/tnano.2005.851402 ( reposiTUm)

Sverdlov, V., Gehring, A., Kosina, H., & Selberherr, S. (2005). Quantum Transport in Ultra-Scaled Double-Gate MOSFETs: A Wigner Function-Based Monte Carlo Approach. Solid-State Electronics, 49(9), 1510–1515. https://doi.org/10.1016/j.sse.2005.07.013 ( reposiTUm)

Kim, S. C., Bahng, W., Kim, N. K., Kim, E. D., Ayalew, T., Grasser, T., & Selberherr, S. (2005). Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication. Materials Science Forum, 483–485, 793–796. https://doi.org/10.4028/www.scientific.net/msf.483-485.793 ( reposiTUm)

Ayalew, T., Grasser, T., Kosina, H., & Selberherr, S. (2005). Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices. Materials Science Forum, 483–485, 845–848. https://doi.org/10.4028/www.scientific.net/msf.483-485.845 ( reposiTUm)

Pourfath, M., Gehring, A., Ungersboeck, E., Kosina, H., Selberherr, S., Cheong, B. H., & Park, W. J. (2005). Separated Carrier Injection Control in Carbon Nanotube Field-Effect Transistors. Journal of Applied Physics, 97(10), 106103. https://doi.org/10.1063/1.1897491 ( reposiTUm)

Dhar, S., Kosina, H., Palankovski, V., Ungersböck, S. E., & Selberherr, S. (2005). Electron Mobility Model for Strained-Si Devices. IEEE Transactions on Electron Devices, 52(4), 527–533. https://doi.org/10.1109/ted.2005.844788 ( reposiTUm)

Gehring, A., & Selberherr, S. (2005). Gate Current Modeling for MOSFETs. Journal of Computational and Theoretical Nanoscience, 2(4), 473–491. https://doi.org/10.1166/jctn.2005.002 ( reposiTUm)

Ayalew, T., Kim, S. C., Grasser, T., & Selberherr, S. (2005). Numerical Analysis of SiC Merged PiN Schottky Diodes. Materials Science Forum, 483–485, 949–952. https://doi.org/10.4028/www.scientific.net/msf.483-485.949 ( reposiTUm)

Pourfath, M., Ungersboeck, E., Gehring, A., Cheong, B. H., Park, W. J., Kosina, H., & Selberherr, S. (2005). Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors. Microelectronic Engineering, 81(2–4), 428–433. https://doi.org/10.1016/j.mee.2005.03.043 ( reposiTUm)

Pourfath, M., Ungersboeck, E., Gehring, A., Kosina, H., Selberherr, S., PARK, W.-J., & Cheong, B.-H. (2005). Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors. Journal of Computational Electronics, 4(1–2), 75–78. https://doi.org/10.1007/s10825-005-7111-z ( reposiTUm)

Heitzinger, C., Sheikholeslami, A., Park, J. M., & Selberherr, S. (2005). A Method for Generating Structurally Aligned Grids for Semiconductor Device Simulation. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 24(10), 1485–1491. https://doi.org/10.1109/tcad.2005.852297 ( reposiTUm)

Grasser, T., Kosik, R., Jungemann, C., Kosina, H., & Selberherr, S. (2005). Nonparabolic Macroscopic Transport Models for Device Simulation Based on Bulk Monte Carlo Data. Journal of Applied Physics, 97(9), 093710. https://doi.org/10.1063/1.1883311 ( reposiTUm)

Wagner, S., Grasser, T., Fischer, C., & Selberherr, S. (2005). An Advanced Equation Assembly Module. Engineering with Computers, 21(2), 151–163. https://doi.org/10.1007/s00366-005-0319-5 ( reposiTUm)

Grasser, T., Kosik, R., Jungemann, C., Meinerzhagen, B., Kosina, H., & Selberherr, S. (2004). A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Semiconductor Devices. Journal of Computational Electronics, 3(3–4), 183–187. https://doi.org/10.1007/s10825-004-7041-1 ( reposiTUm)

Gehring, A., & Selberherr, S. (2004). Evolution of Current Transport Models for Engineering Applications. Journal of Computational Electronics, 3(3–4), 149–155. https://doi.org/10.1007/s10825-004-7035-z ( reposiTUm)

Harlander, C., Sabelka, R., & Selberherr, S. (2003). Efficient Inductance Calculation in Interconnect Structures by Applying the Monte Carlo Method. Microelectronics Journal, 34(9), 815–821. https://doi.org/10.1016/s0026-2692(03)00147-2 ( reposiTUm)

Kaiblinger-Grujin, G., Kosina, H., Köpf, Ch., & Selberherr, S. (1997). Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors. Materials Science Forum, 258–263, 939–944. https://doi.org/10.4028/www.scientific.net/msf.258-263.939 ( reposiTUm)

Mukai, M., Tatsumi, T., Nakauchi, N., Kobayashi, T., Koyama, K., Komatsu, Y., Bauer, R., Rieger, G., & Selberherr, S. (1995). The Simulation System for Three-Dimensional Capacitance and Current Density Calculation with a User Friendly GUI. Technical Report of IEICE, 95(223), 63–68. http://hdl.handle.net/20.500.12708/174358 ( reposiTUm)

Strasser, E., & Selberherr, S. (1995). Algorithms and Models for Cellular Based Topography Simulation. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 14(9), 1104–1114. https://doi.org/10.1109/43.406712 ( reposiTUm)

Puchner, H., & Selberherr, S. (1995). An Advanced Model for Dopant Diffusion in Polysilicon. IEEE Transactions on Electron Devices, 42(10), 1750–1755. https://doi.org/10.1109/16.464423 ( reposiTUm)

Halama, S., Pichler, C., Rieger, G., Schrom, G., Simlinger, T., & Selberherr, S. (1995). VISTA - User Interface, Task Level, and Tool Integration. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 14(10), 1208–1222. https://doi.org/10.1109/43.466337 ( reposiTUm)

Brand, H., & Selberherr, S. (1995). Two-Dimensional Simulation of Thermal Runaway in a Nonplanar GTO-Thyristor. IEEE Transactions on Electron Devices, 42(12), 2137–2146. https://doi.org/10.1109/16.477772 ( reposiTUm)

Bohmayr, W., Burenkov, A., Lorenz, J., Ryssel, H., & Selberherr, S. (1995). Trajectory Split Method for Monte Carlo Simulation of Ion Implantation. IEEE Transactions on Semiconductor Manufacturing, 8(4), 402–407. https://doi.org/10.1109/66.475181 ( reposiTUm)

Stippel, H., Leitner, E., Pichler, Ch., Puchner, H., Strasser, E., & Selberherr, S. (1995). Process Simulation for the 1990s. Microelectronics Journal, 26(2–3), 203–215. https://doi.org/10.1016/0026-2692(95)98922-e ( reposiTUm)

Kosina, H., Langer, E., & Selberherr, S. (1995). Device Modelling for the 1990s. Microelectronics Journal, 26(2–3), 217–233. https://doi.org/10.1016/0026-2692(95)98923-f ( reposiTUm)

Halama, S., Fasching, F., Fischer, C., Kosina, H., Leitner, E., Lindorfer, P., Pichler, Ch., Pimingstorfer, H., Puchner, H., Rieger, G., Schrom, G., Simlinger, T., Stiftinger, M., Stippel, H., Strasser, E., Tuppa, W., Wimmer, K., & Selberherr, S. (1995). The Viennese Integrated System for Technology CAD Applications. Microelectronics Journal, 26(2–3), 137–158. https://doi.org/10.1016/0026-2692(95)98918-h ( reposiTUm)

Khalil, N., Faricelli, J., Bell, D., & Selberherr, S. (1995). The Extraction of Two-Dimensional MOS Transistor Doping via Inverse Modeling. IEEE Electron Device Letters, 16(1), 17–19. https://doi.org/10.1109/55.363213 ( reposiTUm)

Fasching, F., Tuppa, W., & Selberherr, S. (1994). VISTA - The Data Level. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 13(1), 72–81. https://doi.org/10.1109/43.273748 ( reposiTUm)

Strasser, E., Schrom, G., Wimmer, K., & Selberherr, S. (1994). Accurate Simulation of Pattern Transfer Processes Using Minkowski Operations. IEICE Transactions on Electronics, E77-C(2), 92–97. http://hdl.handle.net/20.500.12708/174354 ( reposiTUm)

Kosina, H., & Selberherr, S. (1994). A Hybrid Device Simulator that Combines Monte Carlo and Drift-Diffusion Analysis. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 13(2), 201–210. https://doi.org/10.1109/43.259943 ( reposiTUm)

Stippel, H., & Selberherr, S. (1994). Monte Carlo Simulation of Ion Implantation for Three-Dimensional Structures Using an Octree. IEICE Transactions on Electronics, E77-C(2), 118–123. http://hdl.handle.net/20.500.12708/174355 ( reposiTUm)

Brand, H., & Selberherr, S. (1994). Electrothermal Analysis of Latch-Up in an Insulated Gate Transistor (IGT). IEICE Transactions on Electronics, E77-C(2), 179–186. http://hdl.handle.net/20.500.12708/174356 ( reposiTUm)

Abramo, A., Baudry, L., Brunetti, R., Castagne, R., Charef, M., Dessene, F., Dollfus, P., Dutton, R., Engl, W. L., Fauquembergue, R., Fiegna, C., Fischetti, M. V., Galdin, S., Goldsman, N., Hackel, M., Hamaguchi, C., Hess, K., Hennacy, K., Hesto, P., … Yoshii, A. (1994). A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon. IEEE Transactions on Electron Devices, 41(9), 1646–1654. https://doi.org/10.1109/16.310119 ( reposiTUm)

Halama, S., & Selberherr, S. (1993). Future Aspects of Process and Device Simulation. Electron Technology, 26, 49–57. http://hdl.handle.net/20.500.12708/174349 ( reposiTUm)

Fischer, C., Nanz, G., & Selberherr, S. (1993). Finite Difference, Boundary-Fitted Grid Generation for Arbitrarily Shaped Two-Dimensional Simulation Areas. Computer Methods in Applied Mechanics and Engineering, 110(1–2), 17–24. https://doi.org/10.1016/0045-7825(93)90016-q ( reposiTUm)

Selberherr, S. (1993). Technology Computer-Aided Design. South African Journal of Physics, 16(1/2), 1–5. http://hdl.handle.net/20.500.12708/174351 ( reposiTUm)

Heinreichsberger, O., Selberherr, S., Stiftinger, M., & Traar, K. P. (1992). Fast Iterative Solution of Carrier Continuity Equations for Three-Dimensional Device Simulation. SIAM Journal on Scientific and Statistical Computing, 13(1), 289–306. https://doi.org/10.1137/0913015 ( reposiTUm)

Nanz, G., Dickinger, P., & Selberherr, S. (1992). Calculation of Contact Currents in Device Simulation. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 11(1), 128–136. https://doi.org/10.1109/43.108625 ( reposiTUm)

Selberherr, S. (1991). Device Modeling and Physics. Physica Scripta, T35, 293–298. https://doi.org/10.1088/0031-8949/1991/t35/057 ( reposiTUm)

Selberherr, S., Stiftinger, M., Heinreichsberger, O., & Traar, K. P. (1991). On the Numerical Solution of the Three-Dimensional Semiconductor Device Equations on Vector-Concurrent Computers. Computer Physics Communications, 67(1), 145–156. https://doi.org/10.1016/0010-4655(91)90227-c ( reposiTUm)

Nanz, G., Kausel, W., & Selberherr, S. (1991). Self-Adaptive Space and Time Grids in Device Simulation. International Journal for Numerical Methods in Engineering, 31(7), 1357–1374. https://doi.org/10.1002/nme.1620310709 ( reposiTUm)

Demel, J., & Selberherr, S. (1991). Application of the Complete Tableau Approach in JANAP. Electrosoft, 2(6), 243–260. http://hdl.handle.net/20.500.12708/174342 ( reposiTUm)

Kausel, W., Nylander, J. O., Nanz, G., Selberherr, S., & Poetzl, H. (1990). BAMBI - A Transient 2D-MESFET Model with General Boundary Conditions Including Schottky and Current Controlled Contacts. Microelectronics Journal, 21(5), 5–21. https://doi.org/10.1016/0026-2692(90)90014-t ( reposiTUm)

Selberherr, S., Hänsch, W., Seavey, M., & Slotboom, J. (1990). The Evolution of the MINIMOS Mobility Model. Solid-State Electronics, 33(11), 1425–1436. https://doi.org/10.1016/0038-1101(90)90117-w ( reposiTUm)

Selberherr, S., Hänsch, W., Seavey, M., & Slotboom, J. (1990). The Evolution of the MINIMOS Mobility Model. AEÜ - International Journal of Electronics and Communications, 44(3), 161–172. http://hdl.handle.net/20.500.12708/174331 ( reposiTUm)

Kosina, H., & Selberherr, S. (1990). Coupling of Monte Carlo and Drift Diffusion Method with Applications to Metal Oxide Semiconductor Field Effect Transistors. Japanese Journal of Applied Physics, 29(12A), L2283. https://doi.org/10.1143/jjap.29.l2283 ( reposiTUm)

Habaš, P., & Selberherr, S. (1990). On the Effect of Non-Degenerate Doping of Polysilicon Gate in Thin Oxide MOS-Devices - Analytical Modeling. Solid-State Electronics, 33(12), 1539–1544. https://doi.org/10.1016/0038-1101(90)90134-z ( reposiTUm)

Habas, P., & Selberherr, S. (1990). Impact of the Non-Degenerate Gate Effect on the Performance of Submicron MOS-Devices. Informacije Midem - Journal of Microelectronics Electronic Components and Materials, 20(4), 185–188. http://hdl.handle.net/20.500.12708/174337 ( reposiTUm)

Thurner, M., Lindorfer, P., & Selberherr, S. (1990). Numerical Treatment of Nonrectangular Field-Oxide for 3-D MOSFET Simulation. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 9(11), 1189–1197. https://doi.org/10.1109/43.62756 ( reposiTUm)

Thurner, M., & Selberherr, S. (1990). Three-Dimensional Effects Due to the Field Oxide in MOS Devices Analyzed with MINIMOS 5. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 9(8), 856–867. https://doi.org/10.1109/43.57786 ( reposiTUm)

Hobler, G., & Selberherr, S. (1989). Monte Carlo Simulation of Ion Implantation into Two- and Three-Dimensional Structures. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 8(5), 450–459. https://doi.org/10.1109/43.24873 ( reposiTUm)

Nylander, J. O., Masszi, F., Selberherr, S., & Berg, S. (1989). Computer Simulations of Schottky Contacts with a Non-Constant Recombination Velocity. Solid-State Electronics, 32(5), 363–367. https://doi.org/10.1016/0038-1101(89)90125-1 ( reposiTUm)

Selberherr, S., & Langer, E. (1989). Three Dimensional Process and Device Modeling. Microelectronics Journal, 20(1–2), 113–127. https://doi.org/10.1016/0026-2692(89)90126-2 ( reposiTUm)

Selberherr, S. (1989). MOS Device Modeling at 77K. IEEE Transactions on Electron Devices, 36(8), 1464–1474. https://doi.org/10.1109/16.30960 ( reposiTUm)

Kausel, W., Poetzl, H., Nanz, G., & Selberherr, S. (1989). Two-Dimensional Transient Simulation of the Turn-Off Behavior of a Planar MOS-Transistor. Solid-State Electronics, 32(9), 685–709. https://doi.org/10.1016/0038-1101(89)90002-6 ( reposiTUm)

Selberherr, S. (1989). Process Modeling. Microelectronic Engineering, 9(1–4), 605–610. https://doi.org/10.1016/0167-9317(89)90129-9 ( reposiTUm)

Hobler, G., & Selberherr, S. (1988). Two-Dimensional Modeling of Ion Implantation Induced Point Defects. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 7(2), 174–180. https://doi.org/10.1109/43.3147 ( reposiTUm)

Hobler, G., Langer, E., & Selberherr, S. (1987). Two-Dimensional Modeling of Ion Implantation with Spatial Moments. Solid-State Electronics, 30(4), 445–455. https://doi.org/10.1016/0038-1101(87)90175-4 ( reposiTUm)

BUDIL, M., GUERRERO, E., BRABEC, T., SELBERHERR, S., & POETZL, H. (1987). A New Model for the Determination of Point Defect Equilibrium Concentrations in Silicon. COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 6(1), 37–44. https://doi.org/10.1108/eb010299 ( reposiTUm)

Hänsch, W., & Selberherr, S. (1987). MINIMOS 3: A MOSFET Simulator that Includes Energy Balance. IEEE Transactions on Electron Devices, 34(5), 1074–1078. https://doi.org/10.1109/t-ed.1987.23047 ( reposiTUm)

Baghai-Wadji, A. R., Selberherr, S., & Seifert, F. J. (1986). Two-Dimensional Green’s Function of a Semi-Infinite Anisotropic Dielectric in the Wavenumber Domain. IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 33(3), 315–317. https://doi.org/10.1109/t-uffc.1986.26834 ( reposiTUm)

Pichler, P., Jüngling, W., Selberherr, S., Guerrero, E., & Pötzl, H. (1985). Simulation of Critical IC-Fabrication Steps. IEEE Transactions on Electron Devices, 32(10), 1940–1953. https://doi.org/10.1109/t-ed.1985.22226 ( reposiTUm)

Jüngling, W., Pichler, P., Selberherr, S., Guerrero, E., & Pötzl, H. (1985). Simulation of Critical IC Fabrication Processes Using Advanced Physical and Numerical Methods. IEEE Transactions on Electron Devices, 32(2), 156–167. https://doi.org/10.1109/t-ed.1985.21925 ( reposiTUm)

Jüngling, W., Pichler, P., Selberherr, S., Guerrero, E., & Pötzl, H. (1985). Simulation of Critical IC Fabrication Processes Using Advanced Physical and Numerical Methods. IEEE Journal of Solid-State Circuits, 20(1), 76–87. https://doi.org/10.1109/jssc.1985.1052279 ( reposiTUm)

Pichler, P., Jüngling, W., Selberherr, S., Guerrero, E., & Pötzl, H. (1985). Simulation of Critical IC-Fabrication Steps. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 4(4), 384–397. https://doi.org/10.1109/tcad.1985.1270136 ( reposiTUm)

Pichler, P., Jüngling, W., Selberherr, S., & Pötzl, H. (1985). Two-Dimensional Coupled Diffusion Modeling. Physica B: Condensed Matter, 129(1–3), 187–191. https://doi.org/10.1016/0378-4363(85)90566-2 ( reposiTUm)

Demel, J., & Selberherr, S. (1984). VDPACK - Ein benutzerorientiertes Unterprogrammpaket zur Realisierung einer dynamischen Speicherverwaltung in Fortran. Angewandte Informatik, 6, 244–247. http://hdl.handle.net/20.500.12708/174377 ( reposiTUm)

Selberherr, S. (1984). Process and Device Modeling for VLSI. Microelectronics Reliability, 24(2), 225–257. https://doi.org/10.1016/0026-2714(84)90450-5 ( reposiTUm)

Markowich, P. A., & Selberherr, S. (1984). A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations - Analysis and Numerical Experiments. Computational and Applied Mathematics, 3(2), 131–156. http://hdl.handle.net/20.500.12708/174378 ( reposiTUm)

JÜNGLING, W., GUERRERO, E., & SELBERHERR, S. (1984). On Modeling the Intrinsic Number and Fermi Levels for Device and Process Simulation. COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 3(2), 79–105. https://doi.org/10.1108/eb009989 ( reposiTUm)

Schütz, A., Selberherr, S., & Pötzl, H. (1984). Modeling MOS-Transistors in the Avalanche Breakdown Regime. Transactions on Computer Simulation, 1(1), 1–14. http://hdl.handle.net/20.500.12708/174381 ( reposiTUm)

Selberherr, S., & Ringhofer, C. A. (1984). Implications of Analytical Investigations about the Semiconductor Equations on Device Modeling Programs. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 3(1), 52–64. https://doi.org/10.1109/tcad.1984.1270057 ( reposiTUm)

Schütz, A., Selberherr, S., & Pötzl, H. W. (1984). Temperature Distribution and Power Dissipation in MOSFETs. Solid-State Electronics, 27(4), 394–395. https://doi.org/10.1016/0038-1101(84)90175-8 ( reposiTUm)

Ringhofer, Ch., & Selberherr, S. (1983). Implications of Analytical Investigations about the Semiconductor Equations on Device Modeling Programs. MRC Technical Summary Report, 2513, 1–49. http://hdl.handle.net/20.500.12708/174389 ( reposiTUm)

Markowich, P. A., Ringhofer, Ch., & Selberherr, S. (1983). A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor Devices. MRC Technical Summary Report, 2482, 1–50. http://hdl.handle.net/20.500.12708/174390 ( reposiTUm)

Markowich, P. A., Ringhofer, C. A., Selberherr, S., & Lentini, M. (1983). A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor Equations. IEEE Transactions on Electron Devices, 30(9), 1165–1180. https://doi.org/10.1109/t-ed.1983.21273 ( reposiTUm)

Franz, A. F., Franz, G. A., Selberherr, S., Ringhofer, C., & Markowich, P. (1983). Finite Boxes - A Generalization of the Finite Difference Method Suitable for Semiconductor Device Simulation. IEEE Transactions on Electron Devices, 30(9), 1070–1082. https://doi.org/10.1109/t-ed.1983.21261 ( reposiTUm)

Langer, E., Selberherr, S., Markowich, P. A., & Ringhofer, C. A. (1983). Numerical Analysis of Acoustic Wave Generation in Anisotropic Piezoelectric Materials. Sensors and Actuators, 4, 71–76. https://doi.org/10.1016/0250-6874(83)85010-0 ( reposiTUm)

Markowich, P. A., Ringhofer, Ch., Langer, E., & Selberherr, S. (1983). An Asymptotic Analysis of Single-Junction Semiconductor Devices. MRC Technical Summary Report, 2527, 1–62. http://hdl.handle.net/20.500.12708/174388 ( reposiTUm)

Machek, J., & Selberherr, S. (1983). A Novel Finite-Element Approach to Device Modeling. IEEE Transactions on Electron Devices, 30(9), 1083–1092. https://doi.org/10.1109/t-ed.1983.21262 ( reposiTUm)

Goebl, H., Selberherr, S., Rase, W. D., & Pudlatz, H. (1982). Atlas, Matrices et Similarités: Petit Aperçu Dialectométrique. Computers and the Humanities, 16(2), 69–84. https://doi.org/10.1007/bf02259737 ( reposiTUm)

Langer, E., Selberherr, S., & Mader, H. (1982). Numerische Analyse der Bulk-Barrier Diode. AEÜ - International Journal of Electronics and Communications, 36(2), 86–91. http://hdl.handle.net/20.500.12708/174395 ( reposiTUm)

Schütz, A., Selberherr, S., & Pötzl, H. W. (1982). A Two-Dimensional Model of the Avalanche Effect in MOS Transistors. Solid-State Electronics, 25(3), 177–183. https://doi.org/10.1016/0038-1101(82)90105-8 ( reposiTUm)

Selberherr, S., Schütz, A., & Pötzl, H. (1982). Investigation of Parameter Sensitivity of Short Channel MOSFETs. Solid-State Electronics, 25(2), 85–90. https://doi.org/10.1016/0038-1101(82)90035-1 ( reposiTUm)

Schütz, A., Selberherr, S., & Pötzl, H. (1982). Analysis of Breakdown Phenomena in MOSFET’s. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1(2), 77–85. https://doi.org/10.1109/tcad.1982.1269997 ( reposiTUm)

Langer, E., Selberherr, S., & Mader, H. (1982). A Numerical Analysis of Bulk-Barrier Diodes. Solid-State Electronics, 25(4), 317–324. https://doi.org/10.1016/0038-1101(82)90141-1 ( reposiTUm)

Markowich, P. A., Ringhofer, Ch., Selberherr, S., & Langer, E. (1982). A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device. MRC Technical Summary Report, 2388, 1–57. http://hdl.handle.net/20.500.12708/174391 ( reposiTUm)

Selberherr, S., & Guerrero, E. (1981). Simple and Accurate Representation of Implantation Parameters by Low Order Polynomals. Solid-State Electronics, 24(6), 591–593. https://doi.org/10.1016/0038-1101(81)90081-2 ( reposiTUm)

Selberherr, S., Schütz, A., & Pötzl, H. (1981). Two-Dimensional MOS Transistor Modelling. European Electronics, 1(3), 20–30. http://hdl.handle.net/20.500.12708/174398 ( reposiTUm)

Selberherr, S., Schütz, A., & Pötzl, H. (1980). MINIMOS - A Two-Dimensional MOS Transistor Analyzer. IEEE Transactions on Electron Devices, 27(8), 1540–1550. https://doi.org/10.1109/t-ed.1980.20068 ( reposiTUm)

Selberherr, S., Schütz, A., & Pötzl, H. (1980). MINIMOS - Zweidimensionale Modellierung von MOS-Transistoren (Teil 1). Elektronikschau, 9, 18–23. http://hdl.handle.net/20.500.12708/174400 ( reposiTUm)

Selberherr, S., Schütz, A., & Pötzl, H. (1980). MINIMOS - A Two-Dimensional MOS Transistor Analyzer. IEEE Journal of Solid-State Circuits, 15(4), 605–615. https://doi.org/10.1109/jssc.1980.1051444 ( reposiTUm)

Selberherr, S., Schütz, A., & Pötzl, H. (1980). MINIMOS - Zweidimensionale Modellierung von MOS-Transistoren (Teil 2). Elektronikschau, 10, 54–58. http://hdl.handle.net/20.500.12708/174399 ( reposiTUm)

Beiträge in Tagungsbänden

Pruckner, B., Jorstad, N. P., Goes, W., Selberherr, S., & Sverdlov, V. (2024). Magnetic Spin Hall Induced Field-Free Magnetization Switching in SOT-MRAM Devices. In 10th International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2024: Abtract Book (pp. 154–155). ( reposiTUm)

Pruckner, B., Jorstad, N. P., Goes, W., Selberherr, S., & Sverdlov, V. (2024). Field-free Perpendicular Magnetization Switching of SOT-MRAM Devices with Non-Collinear Antiferromagnets. In International Conference on Magnetism: Book of Abstracts (pp. 1842–1842). ( reposiTUm)

Bendra, M., Lacerda de Orio, R., Selberherr, S., Goes, W., & Sverdlov, V. (2024). Influence of Interface Exchange Coupling in Multilayered Spintronic Structures. In Proceedings 2024 47th MIPRO ICT and Electronics Convention (MIPRO) (pp. 1579–1583). https://doi.org/10.1109/MIPRO60963.2024.10569798 ( reposiTUm)

Bendra, M., Ender, J., Lacerda de Orio, R., Selberherr, S., Goes, W., & Sverdlov, V. (2024). Interlayer Exchange Coupling for Enhanced Performance in Spin-Transfer Torque MRAM Devices. In 10th International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2024: Abstract Book (pp. 94–95). ( reposiTUm)

Jorstad, N. P., Goes, W., Selberherr, S., & Sverdlov, V. (2024). Optimizing Unconventional Trilayer SOTs for Field-Free Switching. In 10th International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2024: Abstract Book (pp. 84–85). ( reposiTUm)

Jorstad, N. P., Goes, W., Selberherr, S., & Sverdlov, V. (2024). Optimization of Spin-Orbit Torque for Field-Free Switching of Ferromagnetic Trilayers. In International Conference on Magnetism: Book of Abstract (pp. 1286–1286). ( reposiTUm)

Sverdlov, V., Jorstad, N. P., Bendra, M., Pruckner, B., Hadamek, T., Goes, W., & Selberherr, S. (2024). Modeling Spin and Charge Transport in Magnetic Multilayers: From Emerging Memories to Terahertz Emitters. In Technical Program and Abstract Booklet: TeraTech 2024: The 11th International Symposium of Terahertz Related Devices and Technologies (pp. 13–14). ( reposiTUm)

Pruckner, B., Jorstad, N. P., Hadamek, T., Gös, W., Selberherr, S., & Sverdlov, V. (2024). Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices by Magnetic Spin Hall Effect. In Proceedings 2024 47th MIPRO ICT and Electronics Convention (MIPRO) (pp. 1584–1589). https://doi.org/10.1109/MIPRO60963.2024.10569617 ( reposiTUm)

Bendra, M., Pruckner, B., Lacerda de Orio, R., Selberherr, S., Goes, W., & Sverdlov, V. (2024). Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling. In Proceedings 2024 Device Research Conference (DRC) (pp. 1–2). https://doi.org/10.1109/DRC61706.2024.10605512 ( reposiTUm)

Bendra, M., Lacerda de Orio, R., Goes, W., Selberherr, S., & Sverdlov, V. (2024). Investigating Reliability Issues in Multi-Layered STT-MRAM with Synthetic Antiferromagnets. In 2024 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2024, Singapur, Singapore. https://doi.org/10.1109/IPFA61654.2024.10690971 ( reposiTUm)

Jørstad, N. P., Pruckner, B., Goes, W., Selberherr, S., & Sverdlov, V. (2024). Magnetic Field Free SOT-MRAM Switching. In 2024 Workshop on Innovative Nanoscale Devices and Systems. Book of Abstracts (pp. 44–45). TU Wien. ( reposiTUm)

Pruckner, B., Jorstad, N. P., Bendra, M., Hadamek, T., Goes, W., Selberherr, S., & Sverdlov, V. (2024). Simulation of Advanced MRAM Devices for sub-ns Switching. In B. Pruckner (Ed.), 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 1–4). https://doi.org/10.1109/SISPAD62626.2024.10733317 ( reposiTUm)

Pruckner, B., Jorstad, N. P., Goes, W., Selberherr, S., & Sverdlov, V. (2024). Field-Free Magnetization Switching in SOT-MRAM Devices with Noncollinear Antiferromagnets. In 2024 Austrochip Workshop on Microelectronics (Austrochip) (pp. 1–4). https://doi.org/10.1109/Austrochip62761.2024.10716227 ( reposiTUm)

Bendra, M., Goes, W., Selberherr, S., & Sverdlov, V. (2024). Simulation of SAF-Enhanced Multilayered STT-MRAM Structures. In 2024 Austrochip Workshop on Microelectronics (Austrochip) (pp. 1–4). https://doi.org/10.1109/Austrochip62761.2024.10716241 ( reposiTUm)

Jorstad, N. P., Pruckner, B., Goes, W., Selberherr, S., & Sverdlov, V. (2024). Out-of-plane Polarized Spin Current Generation for Field-free Switching of Perpendicular SOT-MRAM. In Book of abstracts of the Device Research Conference (DRC-2024) (pp. 143–143). http://hdl.handle.net/20.500.12708/202619 ( reposiTUm)

Pruckner, B., Jørstad, N. P., Bendra, M., Hadamek, T., Wolfgang Goes, Selberherr, S., & Sverdlov, V. (2024). Simulation of Advanced MRAM Devices for sub-ns Switching. In 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Jose, United States of America (the). https://doi.org/10.1109/SISPAD62626.2024.10733317 ( reposiTUm)

Knobloch, T., Selberherr, S., & Grasser, T. (2023). High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI Circuits. In ECS Meeting Abstracts (pp. 1864–1864). ECS Transactions. https://doi.org/10.1149/MA2023-01331864mtgabs ( reposiTUm)

Bendra, M., Lacerda de Orio, R., Goes, W., Sverdlov, V., & Selberherr, S. (2023). Modeling of Ultra-Scaled Magnetoresistive Random Access Memory. In Proceedings of the 5th International Conferenceon Microelectronic Devices and Technologies (MicDAT ’2023) (pp. 28–30). ( reposiTUm)

Sverdlov, V., Bendra, M., Jorstad, N. P., Pruckner, B., Hadamek, T., Goes, W., & Selberherr, S. (2023). Multi-bit Operation in an MRAM Cell with a Composite Free Layer. In 2023 Workshop on Innovative Nanoscale Devices and Systems: Book of Abstracts (pp. 143–144). ( reposiTUm)

Hadamek, T., Jorstad, N. P., Goes, W., Selberherr, S., & Sverdlov, V. (2023). Numerical study of two-terminal SOT-MRAM. In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (pp. 1–1). ( reposiTUm)

Pruckner, B., Fiorentini, S., Jorstad, N. P., Hadamek, T., Selberherr, S., Gös, W., & Sverdlov, V. (2023). Switching Performance of Mo-based pMTJ and dsMTJ Structures. In Book of Abstracts of the International Workshop on Computational Nanotechnology (pp. 144–145). ( reposiTUm)

Sverdlov, V., Bendra, M., Goes, W., Fiorentini, S., Garcia-Barrientos, A., & Selberherr, S. (2023). Multi-level Operation in Ultra-scaled MRAM. In 2023 IEEE Latin American Electron Devices Conference (LAEDC) Proceedings. 2023 IEEE Latin American Electron Devices Conference (LAEDC), Puebla, Mexico. https://doi.org/10.1109/LAEDC58183.2023.10209117 ( reposiTUm)

Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Jorstad, N. P., Pruckner, B., Selberherr, S., Goes, W., & Sverdlov, V. (2023). Back-Hopping in Ultra-Scaled MRAM Cells. In Proceedings of the International Convention MIPRO (pp. 159–162). IEEE. https://doi.org/10.23919/MIPRO57284.2023.10159764 ( reposiTUm)

Sverdlov, V., Bendra, M., Pruckner, B., Fiorentini, S., Goes, W., & Selberherr, S. (2023). Comprehensive Modeling of Advanced Composite Magnetoresistive Devices. In Proceedings of the IEEE European Solid-State Device Research Conference (ESSDERC) (pp. 93–96). https://doi.org/10.1109/ESSDERC59256.2023.10268508 ( reposiTUm)

Bendra, M., Fiorentini, S., Selberherr, S., Goes, W., & Sverdlov, V. (2023). Simulation of Spin-Torque and Magnetization Dynamics in STT-MRAM Multi-Level Cells. In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (pp. 1–1). ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2023). Charge and Spin Transport in Semiconductor Devices. In 2023 IEEE 15th International Conference on ASIC (ASICON) (pp. 1–4). https://doi.org/10.1109/ASICON58565.2023.10396645 ( reposiTUm)

Bendra, M., Jorstad, N. P., Lacerda de Orio, R., Selberherr, S., Goes, W., & Sverdlov, V. (2023). Unified Modeling of Ultra-Scaled STT-MRAM Cells: Harnessing Parasitic Effects for Enhanced Data Storage Dynamics. In IEDM 2023 Special MRAM poster session. International Electron Devices Meeting (IEDM 2023), San Francisco, United States of America (the). http://hdl.handle.net/20.500.12708/193762 ( reposiTUm)

Hadamek, T., Jorstad, N. P., Goes, W., Selberherr, S., & Sverdlov, V. (2023). Study of Self-Heating and its Effects in SOT-STT-MRAM. In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 337–340). IEEE. https://doi.org/10.23919/SISPAD57422.2023.10319549 ( reposiTUm)

Bendra, M., Fiorentini, S., Selberherr, S., Goes, W., & Sverdlov, V. (2023). A Multi-Level Cell for Ultra-Scaled STT-MRAM Realized by Back-Hopping. In 9th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2023 (pp. 1–2). http://hdl.handle.net/20.500.12708/189602 ( reposiTUm)

Bendra, M., Fiorentini, S., Hadamek, T., Jorstad, N. P., Ender, J., Lacerda de Orio, R., Selberherr, S., Goes, W., & Sverdlov, V. (2023). Switching Composite Free Layers in Ultra-Scaled MRAM Cells. In 22nd International Winterschool - New Developments in Solid State Physics - Abstract Book (pp. 184–185). http://hdl.handle.net/20.500.12708/188886 ( reposiTUm)

Jorstad, N. P., Fiorentini, S., Goes, W., Selberherr, S., & Sverdlov, V. (2023). Micromagnetic Modeling of SOT-MRAM Dynamics. In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (pp. 1–1). http://hdl.handle.net/20.500.12708/188154 ( reposiTUm)

Pruckner, B., Fiorentini, S., Goes, W., Selberherr, S., & Sverdlov, V. (2023). Impact of Spin-Flip Length in dsMTJ Spacer Layers on Switching Performance. In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023). 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023), Vienna, Austria. http://hdl.handle.net/20.500.12708/189409 ( reposiTUm)

Jorstad, N. P., Goes, W., Selberherr, S., & Sverdlov, V. (2023). Spin Drift-Diffusion Boundary Conditions for FEM Modeling of Multilayer SOT Devices. In Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 357–360). https://doi.org/10.23919/SISPAD57422.2023.10319650 ( reposiTUm)

Fiorentini, S., Pruckner, B., Goes, W., Selberherr, S., & Sverdlov, V. (2023). Accurate Torque Evaluation in Elongated Ultra-Scaled STT-MRAM Devices. In 243rd ECS Meeting with the Eighteenth International Symposium on Solid Oxide Fuel Cells May 28, 2023 - June 2, 2023 Boston, USA (pp. 1–1). https://doi.org/10.1149/MA2023-01331859mtgabs ( reposiTUm)

Hadámek, T., Fiorentini, S., Bendra, M., Orio, R., Loch, W. J., Jorstad, N. P., Selberherr, S., Goes, W., & Sverdlov, V. (2022). Temperature Modeling in STT-MRAM:A Fully Three-Dimensional Finite Element Approach. In Book of Abstracts of the International Conference on Nanostructured Materials (NANO). 16th International Conference on Nanostructured Materials, Sevilla, Spain. http://hdl.handle.net/20.500.12708/153564 ( reposiTUm)

Jørstad, N. P., Fiorentini, S., Selberherr, S., Goes, W., & Sverdlov, V. (2022). Modeling Interfacial and Bulk Spin-Orbit torques. In Book of Abstracts of the International Conference on Nanostructured Materials (NANO). 16th International Conference on Nanostructured Materials, Sevilla, Spain. http://hdl.handle.net/20.500.12708/153565 ( reposiTUm)

Loch, W. J., Selberherr, S., & Sverdlov, V. (2022). Simulation of Novel MRAM Devices with Enhanced Performance. In Book of Abstracts of the International Conference on Nanostructured Materials (NANO). 16th International Conference on Nanostructured Materials, Sevilla, Spain. http://hdl.handle.net/20.500.12708/153566 ( reposiTUm)

Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W. J., Jørstad, N. P., & Selberherr, S. (2022). Modeling Advanced Magnetoresistive Memory: A Journey from Finite Element Methods to Machine Learning Approaches. In 2nd Global Webinar on Nanoscience & Nanotechnology. 2 nd Global Webinar on Nanoscience & Nanotechnology, online, Unknown. http://hdl.handle.net/20.500.12708/153568 ( reposiTUm)

Fiorentini, S., Ender, J., Orio, R., Selberherr, S., Goes, W., & Sverdlov, V. (2022). Comprehensive Evaluation of Torques in Ultra Scaled MRAM Devices. In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 11–12). http://hdl.handle.net/20.500.12708/153578 ( reposiTUm)

Hadámek, T., Goes, W., Selberherr, S., & Sverdlov, V. (2022). Modeling Thermal Effects in STT-MRAM. In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 132–133). http://hdl.handle.net/20.500.12708/153579 ( reposiTUm)

Selberherr, S., & Sverdlov, V. (2022). About Electron Transport and Spin Control in Semiconductor Devices. In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet. 2022 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain. http://hdl.handle.net/20.500.12708/153582 ( reposiTUm)

Ceric, H., de Orio, R. L., & Selberherr, S. (2022). Electromigration Degradation of Gold Interconnects: A Statistical Study. In 2022 IEEE International Interconnect Technology Conference (IITC). 2022 IEEE International Interconnect Technology Conference (IITC), San Jose, USA, United States of America (the). https://doi.org/10.1109/iitc52079.2022.9881313 ( reposiTUm)

Ceric, H., de Orio, R. L., & Selberherr, S. (2022). Microstructural Impact on Electromigration Reliability of Gold Interconnects. In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 178–179). http://hdl.handle.net/20.500.12708/153576 ( reposiTUm)

Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W. J., Jørstad, N. P., Goes, W., & Selberherr, S. (2022). Modeling Advanced Spintronic Based Magnetoresistive Memory. In International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022). International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022), Yerevan, Armenia, Armenia. http://hdl.handle.net/20.500.12708/153572 ( reposiTUm)

Fiorentini, S., Loch, W. J., Bendra, M., Jørstad, N. P., Ender, J., Orio, R., Hadámek, T., Goes, W., Sverdlov, V., & Selberherr, S. (2022). Design Analysis of Ultra-Scaled MRAM Cells. In Proceedings of 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, Nanjing, China, China. http://hdl.handle.net/20.500.12708/153535 ( reposiTUm)

Fiorentini, S., Bendra, M., Ender, J., Orio, R., Goes, W., Selberherr, S., & Sverdlov, V. (2022). Spin Torques in ULTRA-Scaled MRAM Devices. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 348–351). http://hdl.handle.net/20.500.12708/153549 ( reposiTUm)

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Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., & Selberherr, S. (2011). Ballistic Spin Field-Effect Transistors Built on Silicon Fins. In Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits (pp. 59–60). http://hdl.handle.net/20.500.12708/72140 ( reposiTUm)

Makarov, A., Sverdlov, V., Osintsev, D., Weinbub, J., & Selberherr, S. (2011). Modeling of the Advanced Spin Transfer Torque Memory: Macro- and Micromagnetic Simulations. In Proceedings of the 25th European Simulation and Modelling Conference (pp. 177–181). http://hdl.handle.net/20.500.12708/72370 ( reposiTUm)

Makarov, A., Sverdlov, V., Osintsev, D., & Selberherr, S. (2011). Micromagnetic Modeling of Penta-Layer Magnetic Tunnel Junctions with a Composite Soft Layer. In Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems (p. 1). http://hdl.handle.net/20.500.12708/72224 ( reposiTUm)

Makarov, A., Sverdlov, V., Osintsev, D., & Selberherr, S. (2011). Modeling of the Switching Process in Multi-Layered Magnetic Tunnel Junctions. In Proceedings of International School and Conference on Spintronics and Quantum Information Technology (p. 238). http://hdl.handle.net/20.500.12708/72232 ( reposiTUm)

Makarov, A., Sverdlov, V., Osintsev, D., & Selberherr, S. (2011). About the Switching Process in Magnetic Tunnel Junctions with Two Fixed Layers and One Soft Magnetic Layer. In Abstracts Book of The 20th International Conference on Soft Magnetic Materials (p. 444). http://hdl.handle.net/20.500.12708/72295 ( reposiTUm)

Makarov, A., Sverdlov, V., Osintsev, D., & Selberherr, S. (2011). Optimization of the Penta-Layer Magnetic Tunnel Junction for Fast STTRAM Switching. In Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN) (p. 2). http://hdl.handle.net/20.500.12708/72493 ( reposiTUm)

Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Weinbub, J., & Selberherr, S. (2011). Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors. In Meeting Abstracts (p. 1). ECS. http://hdl.handle.net/20.500.12708/75949 ( reposiTUm)

Makarov, A., Sverdlov, V., Osintsev, D., & Selberherr, S. (2011). Switching Time and Current Reduction Using a Composite Free Layer in Magnetic Tunnel Junctions. In Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011) (p. 2). http://hdl.handle.net/20.500.12708/72502 ( reposiTUm)

Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., & Selberherr, S. (2011). Transport properties of spin field-effect transistors built on Si and InAs. In Ulis 2011 Ultimate Integration on Silicon. International Conference on Ultimate Integration of Silicon (ULIS), Bologna, Austria. IEEE. https://doi.org/10.1109/ulis.2011.5757998 ( reposiTUm)

Sverdlov, V., Stanojevic, Z., Baumgartner, O., & Selberherr, S. (2010). Confinement-Enhanced Valley Splitting for Spin-Driven Silicon Devices. In Proceedings of the 6#^{th} International Conference on the Physics and Application of Spin Related Phenomena in Semiconductors (PASPS-VI) (pp. 273–274). http://hdl.handle.net/20.500.12708/71955 ( reposiTUm)

Sverdlov, V., Stanojevic, Z., Baumgartner, O., & Selberherr, S. (2010). Enhanced Valley Splitting in Silicon Nanowires and Point Contacts. In Abstract Book of the Nanoelectronics Days 2010 (p. 118). JARA-FIT. http://hdl.handle.net/20.500.12708/72133 ( reposiTUm)

Sverdlov, V., Baumgartner, O., & Selberherr, S. (2010). Large Valley Splitting in Slightly Misaligned Uniaxially Strained Silicon Films. In Bulletin American Physical Society (APS March Meeting 2010) (p. B9.00001). http://hdl.handle.net/20.500.12708/71956 ( reposiTUm)

Stimpfl, F., Weinbub, J., Heinzl, R., Schwaha, P., & Selberherr, S. (2010). A Unified Topological Layer for Finite Element Space Discretization. In AIP Conference Proceedings (pp. 1655–1658). http://hdl.handle.net/20.500.12708/71619 ( reposiTUm)

Weinbub, J., Schwaha, P., Heinzl, R., Stimpfl, F., & Selberherr, S. (2010). A Dispatched Covariant Type System for Numerical Applications in C++. In AIP Conference Proceedings (pp. 1663–1666). http://hdl.handle.net/20.500.12708/71618 ( reposiTUm)

Mach, G., Heinzl, R., Schwaha, P., Stimpfl, F., Weinbub, J., & Selberherr, S. (2010). A Modular Tool Chain for High Performance CFD Simulations in Intracranial Aneurysms. In AIP Conference Proceedings (pp. 1647–1650). http://hdl.handle.net/20.500.12708/71620 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2010). Modelling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations. In Abstracts of the International Conference on Numerical Methods and Applications (NM&A) (p. B-39). http://hdl.handle.net/20.500.12708/71599 ( reposiTUm)

Nedjalkov, M., Selberherr, S., & Dimov, I. (2010). Stochastic Algorithm for Solving the Wigner-Boltzmann Correction Equation. In Abstracts of the International Conference on Numerical Methods and Applications (NM&A) (p. B-43). http://hdl.handle.net/20.500.12708/71600 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2010). Modeling of Resistive Switching in RRAM Using Monte Carlo Simulations. In Book of Abstracts (p. 141). http://hdl.handle.net/20.500.12708/71606 ( reposiTUm)

Ertl, O., Filipovic, L., & Selberherr, S. (2010). Three-dimensional simulation of focused ion beam processing using the level set method. In 2010 International Conference on Simulation of Semiconductor Processes and Devices. 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy. IEEE. https://doi.org/10.1109/sispad.2010.5604573 ( reposiTUm)

Makarov, A., Weinbub, J., Sverdlov, V., & Selberherr, S. (2010). First-Principles Modeling of Bipolar Resistive Switching in Metal-Oxide Based Memory. In Proceedings of the European Simulation and Modelling Conference (ESM) (pp. 181–186). http://hdl.handle.net/20.500.12708/71666 ( reposiTUm)

Weinbub, J., Heinzl, R., Schwaha, P., Stimpfl, F., & Selberherr, S. (2010). A Lightweight Material Library for Scientific Computing in C++. In Proceedings of the European Simulation and Modelling Conference (ESM) (pp. 454–458). http://hdl.handle.net/20.500.12708/71667 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2010). Monte Carlo Simulation of Bipolar Resistive Switching Memories. In Proceedings of the Nanoelectronics Days 2010 (p. 22). http://hdl.handle.net/20.500.12708/71665 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2010). A Monte Carlo simulation of reproducible hysteresis in RRAM. In 2010 14th International Workshop on Computational Electronics. International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA, Non-EU. https://doi.org/10.1109/iwce.2010.5677934 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2010). Stochastic modeling hysteresis and resistive switching in bipolar oxide-based memory. In 2010 International Conference on Simulation of Semiconductor Processes and Devices. 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy. IEEE. https://doi.org/10.1109/sispad.2010.5604517 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2010). Stochastic Modeling of the Resistive Switching Mechanism in Oxide-Based Memory. In Proceedings of the 17#^{th} International Symposium on the Physics & Failure Analysis of Integrated Circuits (pp. 309–312). http://hdl.handle.net/20.500.12708/71664 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2010). A Stochastic Model of Bipolar Resistive Switching in Metal-Oxide-Based Memory. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 396–399). http://hdl.handle.net/20.500.12708/71668 ( reposiTUm)

Vitanov, S., Palankovski, V., & Selberherr, S. (2010). Hydrodynamic Models for GaN-Based HEMTs. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (p. 4). http://hdl.handle.net/20.500.12708/71690 ( reposiTUm)

Pourfath, M., Sverdlov, V., & Selberherr, S. (2010). Transport Modeling for Nanoscale Semiconductor Devices. In Proceedings of the International Conference on Solid-State and Integrated Circuit Technology (ICSICT) (pp. 1737–1740). http://hdl.handle.net/20.500.12708/71692 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2010). Scalability of a Second Generation Z-RAM Cell: A Computational Study. In Proceedings of the International Conference on Computational & Experimental Engineering and Sciences (ICCES) (pp. 232–247). http://hdl.handle.net/20.500.12708/71386 ( reposiTUm)

Poschalko, C., & Selberherr, S. (2010). Relation between the PCB Near Field and the Common Mode Coupling from the PCB to Cables. In Proceedings of the Asia-Pacific International Symposium on Electromagnetic Compatibility (EMC) (pp. 1102–1105). http://hdl.handle.net/20.500.12708/71457 ( reposiTUm)

Pourfath, M., Sverdlov, V., & Selberherr, S. (2010). Modeling Demands for Nanoscale Devices. In Proceedings of the Device Research Conference (DRC) (pp. 211–214). http://hdl.handle.net/20.500.12708/71474 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2010). Modeling floating body Z-RAM storage cells. In 2010 27th International Conference on Microelectronics Proceedings. International Conference on Microelectronics (MIEL), Beograd, Non-EU. https://doi.org/10.1109/miel.2010.5490533 ( reposiTUm)

Weinbub, J., Rupp, K., & Selberherr, S. (2010). ViennaIPD - An Input Control Language for Scientific Computing. In Proceedings of the Industrial Simulation Conference (pp. 34–38). http://hdl.handle.net/20.500.12708/71465 ( reposiTUm)

Baumgartner, O., Sverdlov, V., Kosina, H., & Selberherr, S. (2010). Strain-Induced Valley Splitting in Slightly Misaligned Silicon Films. In Conference Proceedings of the Sixth Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits (pp. 91–92). http://hdl.handle.net/20.500.12708/71369 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2010). Modeling of Modern MOSFETs with Strain. In Proceedings of the 1st International Workshop on Semiconductor Devices Modeling and Electronic (SDMEM2010) (pp. 1–11). http://hdl.handle.net/20.500.12708/72491 ( reposiTUm)

Ceric, H., Orio, R., & Selberherr, S. (2010). Electromigration Anisotropy and Mechanical Stress in Modern Copper Interconnect. In Proceedings of the 17#^{th} International Symposium on the Physical & Failure Analysis of Integrated Circuits (pp. 167–170). http://hdl.handle.net/20.500.12708/71856 ( reposiTUm)

Ceric, H., de Orio, R. L., & Selberherr, S. (2010). Impact of parameter variability on electromigration lifetime distribution. In 2010 International Conference on Simulation of Semiconductor Processes and Devices. 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy. IEEE. https://doi.org/10.1109/sispad.2010.5604523 ( reposiTUm)

Sverdlov, V., Stanojevic, Z., Baumgartner, O., & Selberherr, S. (2010). Spin-Driven Silicon Devices Utilizing Enhanced Valley Splitting. In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. TH-06). http://hdl.handle.net/20.500.12708/71853 ( reposiTUm)

Cervenka, J., Kosina, H., Selberherr, S., Zhang, J., Hrauda, N., Stangl, J., Bauer, G., Vastola, G., Marzegalli, A., & Miglio, L. (2010). Strained MOSFETs on Ordered SiGe Dots. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 297–300). http://hdl.handle.net/20.500.12708/71877 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2010). Strain Engineering Techniques: A Rigorous Physical Review. In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. TH-05). http://hdl.handle.net/20.500.12708/71852 ( reposiTUm)

Vasicek, M., Sverdlov, V., Cervenka, J., Grasser, T., Kosina, H., & Selberherr, S. (2010). Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models. In I. Lirkov, S. Margenov, & J. Waśniewski (Eds.), Large-Scale Scientific Computing: 7th International Conference, LSSC 2009 (pp. 443–450). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-642-12535-5_52 ( reposiTUm)

Nedjalkov, M., Schwaha, P., Baumgartner, O., & Selberherr, S. (2010). Particle Model of the Scattering-Induced Wigner Function Correction. In I. Lirkov, S. Margenov, & J. Waśniewski (Eds.), Large-Scale Scientific Computing: 7th International Conference, LSSC 2009 (pp. 411–418). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-642-12535-5_48 ( reposiTUm)

Sverdlov, V., Vasicek, M., Cervenka, J., Grasser, T., Kosina, H., & Selberherr, S. (2009). Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models. In Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC) (p. 93). http://hdl.handle.net/20.500.12708/71598 ( reposiTUm)

Nedjalkov, M., Schwaha, P., Baumgartner, O., & Selberherr, S. (2009). Particle Model of the Scattering-Induced Wigner Function Correction. In Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC) (p. 79). http://hdl.handle.net/20.500.12708/71597 ( reposiTUm)

Sverdlov, V., Baumgartner, O., & Selberherr, S. (2009). Subband Parameters in Strained (110) Silicon Films from the Hensel-Hasegawa-Nakayama Model of the Conduction Band. In Proceedings of the International Semiconductor Device Research Symposium (ISDRS) (pp. TP6-03.1-2). http://hdl.handle.net/20.500.12708/71287 ( reposiTUm)

Sverdlov, V., Baumgartner, O., Windbacher, T., & Selberherr, S. (2009). Modeling Techniques for Strained CMOS Technology. In 216#^{th} ECS Meeting (pp. 3–18). http://hdl.handle.net/20.500.12708/71288 ( reposiTUm)

Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovsky, F., & Selberherr, S. (2009). Thickness Dependence of the Effective Masses in a Strained Thin Silicon Film. In 2009 International Conference on Simulation of Semiconductor Processes and Devices. 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, United States of America (the). IEEE. https://doi.org/10.1109/sispad.2009.5290252 ( reposiTUm)

Neophytou, N., Kosina, H., Selberherr, S., & Klimeck, G. (2009). Dependence of Injection Velocity and Capacitance of Si Nanowires on Diameter, Orientation, and Gate Bias: An Atomistic Tight-Binding Study. In 2009 International Conference on Simulation of Semiconductor Processes and Devices. 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, United States of America (the). IEEE. https://doi.org/10.1109/sispad.2009.5290245 ( reposiTUm)

Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovsky, F., & Selberherr, S. (2009). Impact of Confinement and Stress on the Subband Parameters in Ultra-Thin Silicon Films. In ECS Transactions (pp. 389–396). http://hdl.handle.net/20.500.12708/71019 ( reposiTUm)

Ertl, O., & Selberherr, S. (2009). Three-Dimensional Plasma Etching Simulation using Advanced Ray Tracing and Level Set Techniques. In ECS Transactions (pp. 61–68). http://hdl.handle.net/20.500.12708/71018 ( reposiTUm)

Neophytou, N., Wagner, M., Kosina, H., & Selberherr, S. (2009). Analysis of Thermoelectric Properties of Scaled Silicon Nanostructures using an Atomistic Thight-Binding Model. In Book of Abstracts (p. 91). http://hdl.handle.net/20.500.12708/71021 ( reposiTUm)

Orio, R., Ceric, H., Cervenka, J., & Selberherr, S. (2009). The Effect of Microstructure on Electromigration-Induced Failure Development. In ECS Transactions (pp. 345–352). http://hdl.handle.net/20.500.12708/71020 ( reposiTUm)

Pourfath, M., Kosina, H., & Selberherr, S. (2009). Theoretical Study of Graphene Nanoribbon Photo-Detectors. In Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN) (pp. 178–179). http://hdl.handle.net/20.500.12708/71072 ( reposiTUm)

Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., & Ringhofer, Ch. (2009). Study of the Properties of Biotin-Streptavidin Sensitive BioFETs. In Proceedings of the International Conference on Biomedical Electronics and Devices (BIODEVICES) (pp. 24–30). http://hdl.handle.net/20.500.12708/71321 ( reposiTUm)

Pourfath, M., Baumgartner, O., Kosina, H., & Selberherr, S. (2009). Performance Evaluation of Graphene Nanoribbon Infrared Photodetectors. In Proceedings of the 9#^{th} International Conference on Numerical Simulation of Optoelectronic Devices (pp. 13–14). http://hdl.handle.net/20.500.12708/70970 ( reposiTUm)

Orio, R., Ceric, H., Cervenka, J., & Selberherr, S. (2009). Electromigration Failure Development in Modern Dual-Damascene Interconnects. In Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC) (p. 5). http://hdl.handle.net/20.500.12708/70971 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2009). Scaling of Advanced Floating Body Z-RAM Storage Cells: A Modeling Approach. In Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC) (p. 4). http://hdl.handle.net/20.500.12708/70972 ( reposiTUm)

de Orio, R. L., Ceric, H., Cervenka, J., & Selberherr, S. (2009). The Effect of Copper Grain Size Statistics on the Electromigration Lifetime Distribution. In 2009 International Conference on Simulation of Semiconductor Processes and Devices. 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, United States of America (the). IEEE. https://doi.org/10.1109/sispad.2009.5290219 ( reposiTUm)

Ertl, O., & Selberherr, S. (2009). A Fast Void Detection Algorithm for Three-Dimensional Deposition Simulation. In 2009 International Conference on Simulation of Semiconductor Processes and Devices. 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, United States of America (the). IEEE. https://doi.org/10.1109/sispad.2009.5290221 ( reposiTUm)

Ceric, H., de Orio, R. L., Cervenka, J., & Selberherr, S. (2009). Copper Microstructure Impact on Evolution of Electromigration Induced Voids. In 2009 International Conference on Simulation of Semiconductor Processes and Devices. 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, United States of America (the). IEEE. https://doi.org/10.1109/sispad.2009.5290222 ( reposiTUm)

Sverdlov, V., Baumgartner, O., Kosina, H., Selberherr, S., Schanovsky, F., & Esseni, D. (2009). The Linear Combination of Bulk Bands-Method for Electron and Hole Subband Calculations in Strained Silicon Films and Surface Layers. In 2009 13th International Workshop on Computational Electronics. International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA, Non-EU. https://doi.org/10.1109/iwce.2009.5091158 ( reposiTUm)

Schwaha, P., Baumgartner, O., Heinzl, R., Nedjalkov, M., Selberherr, S., & Dimov, I. (2009). Classical Approximation of the Scattering Induced Wigner Correction Equation. In 2009 13th International Workshop on Computational Electronics. International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA, Non-EU. https://doi.org/10.1109/iwce.2009.5091092 ( reposiTUm)

Windbacher, T., Sverdlov, V., & Selberherr, S. (2009). Modeling of Low Concentrated Buffer DNA Detection with Suspend Gate Field-Effect Transistors (SGFET). In 2009 13th International Workshop on Computational Electronics. International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA, Non-EU. https://doi.org/10.1109/iwce.2009.5091122 ( reposiTUm)

Sverdlov, V., Windbacher, T., Baumgartner, O., Schanovsky, F., & Selberherr, S. (2009). Valley Splitting in Thin Silicon Films from a Two-Band k·p Model. In Proceedings of the 10#^{th} International Conference on Ultimate Integration of Silicon (pp. 277–280). http://hdl.handle.net/20.500.12708/70760 ( reposiTUm)

Sverdlov, V., Baumgartner, O., Windbacher, T., & Selberherr, S. (2009). Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Ultra-Thin Films. In Proceedings of 2009 Silicon Nanoelectronics Workshop (pp. 95–96). http://hdl.handle.net/20.500.12708/70865 ( reposiTUm)

Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovsky, F., & Selberherr, S. (2009). Impact of Confinement of Semiconductor and Band Engineering on Future Device Performance. In 215#^{th} ECS Meeting (pp. 15–26). http://hdl.handle.net/20.500.12708/70835 ( reposiTUm)

Sverdlov, V., Baumgartner, O., Windbacher, T., & Selberherr, S. (2009). Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting. In Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Unmapped Roads (p. 58). http://hdl.handle.net/20.500.12708/70836 ( reposiTUm)

Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., & Ringhofer, Ch. (2009). Study of the Properties of Biotin-Streptavidin Sensitive Biofets. In Final Program and Book of Abstracts (p. 42). http://hdl.handle.net/20.500.12708/70726 ( reposiTUm)

Sverdlov, V., Windbacher, T., Baumgartner, O., & Selberherr, S. (2009). Electron Subband Structure and Valley Splitting in Silicon Ultra-Thin Body SOI Structures from the Two-Band k.p Model. In EUROSOI 2009 Conference Proceedings (pp. 81–82). http://hdl.handle.net/20.500.12708/70775 ( reposiTUm)

Sverdlov, V., Baumgartner, O., Tyaginov, S. E., Windbacher, T., & Selberherr, S. (2009). Subband Structure in Ultra-Thin Silicon Films. In Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology (pp. 62–63). http://hdl.handle.net/20.500.12708/70881 ( reposiTUm)

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Ceric, H., Orio, R., Cervenka, J., & Selberherr, S. (2009). The Effect of Microstructure on Electromigration Induced Voids. In Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (pp. 694–697). http://hdl.handle.net/20.500.12708/71257 ( reposiTUm)

Pourfath, M., & Selberherr, S. (2009). Modeling Optical Sensors Based on Carbon Nanotubes. In Proceedings of the International Symposium on Microwave and Optical Technology (ISMOT) (pp. 1381–1384). http://hdl.handle.net/20.500.12708/71115 ( reposiTUm)

Pourfath, M., & Selberherr, S. (2009). Carbon-Based Electronics: A Computational Study. In Proceedings of the International Workshop on the Physics of Semiconductor Devices (IWPSD) (p. 6). http://hdl.handle.net/20.500.12708/71114 ( reposiTUm)

Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovski, F., & Selberherr, S. (2009). Enhanced by Shear Strain Splitting of Unprimed Subbands in (001) Silicon Films and Point Contacts. In Abstracts of the International Conference on Spintronics and Quantum Information Technology (SPINTECH) (p. 301). http://hdl.handle.net/20.500.12708/71269 ( reposiTUm)

Cervenka, J., & Selberherr, S. (2008). Analysis of microstructure impact on electromigration. In 2008 International Conference on Simulation of Semiconductor Processes and Devices. 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kanagawa, Japan. IEEE. https://doi.org/10.1109/sispad.2008.4648282 ( reposiTUm)

Windbacher, T., & Selberherr, S. (2008). Mobility enhancement in thin silicon films: Strain and thickness dependences of the effective masses and non-parabolicity parameter. In 2008 International Conference on Simulation of Semiconductor Processes and Devices. 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kanagawa, Japan. IEEE. https://doi.org/10.1109/sispad.2008.4648258 ( reposiTUm)

Ertl, O., & Selberherr, S. (2008). Three-dimensional topography simulation using advanced level set and ray tracing methods. In 2008 International Conference on Simulation of Semiconductor Processes and Devices. 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kanagawa, Japan. IEEE. https://doi.org/10.1109/sispad.2008.4648303 ( reposiTUm)

Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., & Ringhofer, C. (2008). Simulation of field-effect Biosensors (BioFETs). In 2008 International Conference on Simulation of Semiconductor Processes and Devices. 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kanagawa, Japan. IEEE. https://doi.org/10.1109/sispad.2008.4648270 ( reposiTUm)

Poschalko, C., & Selberherr, S. (2008). Radiated Emission from the Slot of a Slim Cubical Enclosure with Multiple Sources Inside. In Proceedings of the 8#^{th} International Symposium on Electromagnetic Compatibility (pp. 109–114). http://hdl.handle.net/20.500.12708/70464 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2008). Modeling and Simulation of Advanced Floating Body Z-RAM Memory Cells. In Proceedings European Simulation and Modeling Conference (ESM) (pp. 380–384). http://hdl.handle.net/20.500.12708/70465 ( reposiTUm)

Pourfath, M., Kosina, H., & Selberherr, S. (2008). Reduction of the Dark-Current in Carbon Nanotube Photo-Detectors. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 214–217). http://hdl.handle.net/20.500.12708/70436 ( reposiTUm)

Windbacher, T., Sverdlov, V., Selberherr, S., & Heitzinger, C. (2008). A General Bottom-Up Modeling Approach for BioFETs. In Abstracts Conf.on Nanosensors for Industrial Applications (NANOSENS). 2. Internationale Konferenz NanoSens2008, Vienna, Austria. http://hdl.handle.net/20.500.12708/70466 ( reposiTUm)

Poschalko, C., & Selberherr, S. (2008). Domain separation with port interfaces for calculation of emissions from enclosure slots. In 2008 IEEE International Symposium on Electromagnetic Compatibility. International Symposium on Electromagnetic Compatibility (EMC), Detroit, Non-EU. https://doi.org/10.1109/isemc.2008.4652083 ( reposiTUm)

Heinzl, R., Schwaha, P., Stimpfl, F., & Selberherr, S. (2008). Parallel Library-Centric Application Design by a Generic Scientific Simulation Environment. In 7th Workshop on Parallel/High-Performance Object-Oriented Scientific Computing (POOSC’08) (p. 5). http://hdl.handle.net/20.500.12708/70538 ( reposiTUm)

Pourfath, M., & Selberherr, S. (2008). Modeling Current Transport in Carbon Nanotube Transistors. In IEEE International Conference on Electron Devices and Solid-State Circuit 2008 (p. 6). http://hdl.handle.net/20.500.12708/70584 ( reposiTUm)

Yazdanpanah Goharrizi, A., Pourfath, M., Fathipour, M., Kosina, H., & Selberherr, S. (2008). A Numerical Study of Graphene Nano-Ribbon based Resonant Tunneling Diodes. In International Symposium on Graphene Devices: Technology, Physics, and Modeling (pp. 66–67). http://hdl.handle.net/20.500.12708/70599 ( reposiTUm)

Sverdlov, V., Windbacher, T., Kosina, H., & Selberherr, S. (2008). Stress-Induced Valley Splitting in Silicon Thin Films. In Proceedings of the 9th International Conference on Ultimate Integration on Silicon (pp. 93–96). http://hdl.handle.net/20.500.12708/70594 ( reposiTUm)

Sverdlov, V., Kosina, H., & Selberherr, S. (2008). Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond. In Proceedings of the 4#^{th} Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (pp. 41–42). http://hdl.handle.net/20.500.12708/70595 ( reposiTUm)

Pourfath, M., Kosina, H., & Selberherr, S. (2008). Current Transport in Carbon Nanotube Transistors. In The 9#^{th} Internationl Conference on Solid-State and Integrated-Circuit Technology (pp. 361–364). http://hdl.handle.net/20.500.12708/70598 ( reposiTUm)

Pourfath, M., & Selberherr, S. (2008). Analysis of Carbon Nanotube Photo-Detectors. In Abstracts Advanced Heterostructures and Nanostructures Workshop (AHNW) (p. TU-06). http://hdl.handle.net/20.500.12708/70513 ( reposiTUm)

Schwaha, P., Heinzl, R., Stimpfl, F., & Selberherr, S. (2008). Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages for High-Performance Applications. In 7th Workshop on Parallel/High-Performance Object-Oriented Scientific Computing (POOSC’08) (p. 6). http://hdl.handle.net/20.500.12708/70539 ( reposiTUm)

Orio, R., Carniello, S., Ceric, H., & Selberherr, S. (2008). Analysis of Electromigration in Dual-Damascene Interconnect Structures. In ECS Transactions (pp. 337–348). http://hdl.handle.net/20.500.12708/70642 ( reposiTUm)

Poschalko, C., & Selberherr, S. (2008). Calculation of the Radiation from the Slot of a Slim Enclosure with a Cavity Resonator Model. In 19th International Zurich Symposium on Electromagnetic Compatibility, (pp. 634–637). http://hdl.handle.net/20.500.12708/70214 ( reposiTUm)

Stimpfl, F., Heinzl, R., Schwaha, P., & Selberherr, S. (2008). High Performance Parallel Mesh Generation and Adaption. In Proceedings Intl. Workshop on State-of-the-Art in Scientific and Parallel Computing. Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Umea, EU. http://hdl.handle.net/20.500.12708/70207 ( reposiTUm)

Ceric, H., Orio, R., Cervenka, J., & Selberherr, S. (2008). Stress-Induced Anisotropy of Electromigration in Copper Interconnects. In Proceedings of the Stress-Induced Phenomena in Metallization: 10#^{th} International Workshop (pp. 56–62). http://hdl.handle.net/20.500.12708/70895 ( reposiTUm)

Ceric, H., Orio, R., Cervenka, J., & Selberherr, S. (2008). TCAD Solutions for Submicron Copper Interconnect. In Proceedings 15#^{th} International Symposium on the Physical and Failure Analysis of Integrated Circuits (pp. 78–81). http://hdl.handle.net/20.500.12708/70253 ( reposiTUm)

Pourfath, M., & Selberherr, S. (2008). Current Transport in Carbon Nanotube Transistors. In Proceedings of the 7th International Caribbean Conference on Devices, Circuits and Systems (p. 6). http://hdl.handle.net/20.500.12708/70169 ( reposiTUm)

Ceric, H., Lacerda de Orio, R., & Selberherr, S. (2008). Comprehensive modeling of electromigration induced interconnect degradation mechanisms. In 2008 26th International Conference on Microelectronics. International Conference on Microelectronics (MIEL), Beograd, Non-EU. https://doi.org/10.1109/icmel.2008.4559225 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2008). Strain-Controlled Valley Splitting in Si-SiGe Heterostructures. In Abstract Book (pp. 20–21). http://hdl.handle.net/20.500.12708/70213 ( reposiTUm)

Heinzl, R., Schwaha, P., Stimpfl, F., & Selberherr, S. (2008). A Parallel Generic Scientific Simulation Environment. In Proceedings Intl. Workshop on State-of-the-Art in Scientific and Parallel Computing. Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Umea, EU. http://hdl.handle.net/20.500.12708/70210 ( reposiTUm)

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Sverdlov, V., & Selberherr, S. (2008). Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress. In ECS Transactions (pp. 159–168). http://hdl.handle.net/20.500.12708/70748 ( reposiTUm)

Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., & Ringhofer, Ch. (2008). Simulation of Field-Effect Biosensors (BioFETs) for Biotin-Streptavidin Complexes. In PHYSICS OF SEMICONDUCTORS: 29#^{th} International Conference on the Physics of Semiconductors (pp. 507–508). http://hdl.handle.net/20.500.12708/71358 ( reposiTUm)

Sverdlov, V., Kosina, H., & Selberherr, S. (2008). Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations with an Analytical Two-Band k·p Model: Conduction Band of Silicon. In K. A. Valiev & A. A. Orlikovsky (Eds.), Micro- and Nanoelectronics 2007 (pp. 70251I-1-70251I – 8). https://doi.org/10.1117/12.802503 ( reposiTUm)

Stimpfl, F., Heinzl, R., Schwaha, P., & Selberherr, S. (2008). A Delaunay Mesh Generation Approach without the Use of Convex Hulls. In Proceedings Intl. Conf.on Numerical Geometry, Grid Generation and Scientific Computing (p. 2). http://hdl.handle.net/20.500.12708/72783 ( reposiTUm)

Schwaha, P., Stimpfl, F., Heinzl, R., & Selberherr, S. (2008). A Parallel Delaunay and Advancing Front Mesh Generation Approach. In Proceedings Intl. Conf.on Numerical Geometry, Grid Generation and Scientific Computing (p. 2). http://hdl.handle.net/20.500.12708/72784 ( reposiTUm)

Okhonin, S., Nagoga, M., Lee, C. W., Colinge, J. P., Afzalian, A., Yan, R., Akhavan, N. D., Xiong, W., Sverdlov, V., Selberherr, S., & Mazure, C. (2008). Ultra-Scaled Z-RAM Cell. In 2008 IEEE International SOI Conference Proceedings (pp. 157–158). https://doi.org/10.1109/SOI.2008.4656342 ( reposiTUm)

Schwaha, P., Schwaha, M., Heinzl, R., Ungersböck, S. E., & Selberherr, S. (2007). Simulation Methodologies for Scientific Computing - Modern Application Design. In Proceedings of the 2#^{nd} ICSOFT 2007 (pp. 270–276). http://hdl.handle.net/20.500.12708/69694 ( reposiTUm)

Heinzl, R., Schwaha, P., & Selberherr, S. (2007). Modern Concepts for High-Perfomance Scientific Computing - Library Centric Application Design. In Proceedings of the 2#^{nd} ICSOFT 2007 (pp. 100–107). http://hdl.handle.net/20.500.12708/69695 ( reposiTUm)

Schwaha, P., Giani, C., Heinzl, R., & Selberherr, S. (2007). Visualization of Polynomials Used in Series Expansions. In Proceedings of the 4#^{th} High-End Visualization Workshop (pp. 139–148). http://hdl.handle.net/20.500.12708/69676 ( reposiTUm)

Schwaha, P., Heinzl, R., Mach, G., Pogoreutz, C., Fister, S., & Selberherr, S. (2007). A High Performance Webapplication for an Electro-Biological Problem. In ECMS 2007 Proceedings edited by: I. Zelinka, Z. Oplatkova, A. Orsoni. 21st European Conference on Modelling and Simulation, Prag, EU. https://doi.org/10.7148/2007-0218 ( reposiTUm)

Heinzl, R., Schwaha, P., Giani, C., & Selberherr, S. (2007). Modeling of Non-Trivial Data-Structures with a Generic Scientific Simulation Environment. In Proceedings of the 4#^{th} High-End Visualization Workshop (pp. 5–13). http://hdl.handle.net/20.500.12708/69674 ( reposiTUm)

Hollauer, C., Ceric, H., van Barel, G., Witvrouw, A., & Selberherr, S. (2007). Investigation of Intrinsic Stress Effects in Cantilever Structures. In Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems (CD ROM) (p. 4). http://hdl.handle.net/20.500.12708/69558 ( reposiTUm)

Sverdlov, V., Karlowatz, G., Kosina, H., & Selberherr, S. (2007). Two-Band k.p Model for the Conduction Band in Silicon. In Proceedings European Simulation and Modeling Conference (pp. 220–224). http://hdl.handle.net/20.500.12708/70037 ( reposiTUm)

Heinzl, R., Mach, G., Schwaha, P., & Selberherr, S. (2007). A Performance Test Platform. In Proceedings European Simulation and Modeling Conference (pp. 483–487). http://hdl.handle.net/20.500.12708/70036 ( reposiTUm)

Schwaha, P., Heinzl, R., Mach, G., Pogoreutz, C., Fister, S., & Selberherr, S. (2007). Electro-Biological Simulation using a Web Front-End. In Proceedings European Simulation and Modeling Conference (pp. 493–495). http://hdl.handle.net/20.500.12708/70035 ( reposiTUm)

Stimpfl, F., Heinzl, R., Schwaha, P., & Selberherr, S. (2007). A Multi-Mode Mesh Generation Approach for Scientific Computing. In Proceedings European Simulation and Modeling Conference (pp. 506–513). http://hdl.handle.net/20.500.12708/70032 ( reposiTUm)

Pourfath, M., Kosina, H., & Selberherr, S. (2007). The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance. In International Symposium on Advanced Nanodevices and Nanotechnology (pp. 37–38). http://hdl.handle.net/20.500.12708/70058 ( reposiTUm)

Sverdlov, V., Kosina, H., & Selberherr, S. (2007). Conduction Band in Silicon: Numerical Versus Analytical Two-Band k·p Model. In 8#^{th} Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics (p. 4). http://hdl.handle.net/20.500.12708/70060 ( reposiTUm)

Sverdlov, V., Karlowatz, G., Dhar, S., Kosina, H., & Selberherr, S. (2007). Two-Band k·p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility. In 2007 International Semiconductor Device Research Symposium (p. 2). http://hdl.handle.net/20.500.12708/70046 ( reposiTUm)

Vitanov, S., Palankovski, V., Murad, S., Rödle, T., Quay, R., & Selberherr, S. (2007). Predictive Simulation of AlGaN/GaN HEMTs. In 2007 IEEE Compound Semiconductor Integrated Circuits Symposium. IEEE Compound Semiconductor IC Symposium (CSICS), San Antonio, Non-EU. https://doi.org/10.1109/csics07.2007.31 ( reposiTUm)

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Sverdlov, V., Ungersböck, S. E., Kosina, H., & Selberherr, S. (2007). Effects of Shear Strain on the Conduction Band in Silicon: An Efficient Two-Band k.p Theory. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 386–389). http://hdl.handle.net/20.500.12708/69752 ( reposiTUm)

Gös, W., & Grasser, T. (2007). First-Principles Investigation on Oxide Trapping. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 157–160). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_38 ( reposiTUm)

Vasicek, M., Karner, M., Ungersboeck, E., Wagner, M., Kosina, H., & Grasser, T. (2007). Modeling of Macroscopic Transport Parameters in Inversion Layers. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 201–204). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_48 ( reposiTUm)

Kosina, H., Triebl, O., & Grasser, T. (2007). Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 317–320). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_76 ( reposiTUm)

Li, L., Meller, G., & Kosina, H. (2007). Charge Injection Model in Organic Light-Emitting Diodes Based on a Master Equation. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 377–380). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_91 ( reposiTUm)

Meller, G., Li, L., Holzer, S., & Kosina, H. (2007). Dynamic Monte Carlo Simulation of an Amorphous Organic Device. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 373–376). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_90 ( reposiTUm)

Ceric, H., Nentchev, A., Langer, E., & Selberherr, S. (2007). Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 37–40). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_9 ( reposiTUm)

Vitanov, S., Palankovski, V., Murad, S., Rödle, T., Quay, R., & Selberherr, S. (2007). Hydrodynamic Modeling of AlGaN/GaN HEMTs. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 273–276). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_65 ( reposiTUm)

Ceric, H., & Selberherr, S. (2007). Electromigration in Interconnect Structures of Microelectronic Circuits. In Microelectronics, Electronics, and Electronic Technologies (MEET) (pp. 23–28). http://hdl.handle.net/20.500.12708/69827 ( reposiTUm)

Ceric, H., & Selberherr, S. (2007). Electromigration Modeling for Interconnect Structures in Microelectronics. In ECS Transactions (pp. 295–304). http://hdl.handle.net/20.500.12708/69826 ( reposiTUm)

Heitzinger, C., Ringhofer, Ch., & Selberherr, S. (2007). Investigations of the Potential Jump at the Surface of BioFETs Using a Multi-scale Model. In 211#^{th} ECS Meeting. Meeting of the Electrochemical Society, Multi-Scale Simulations of Electrochemical Systems, Chicago, Non-EU. http://hdl.handle.net/20.500.12708/69845 ( reposiTUm)

Nentchev, A., & Selberherr, S. (2007). Three-dimensional on-chip inductance and resistance extraction. In Proceedings of the 20th annual conference on Integrated circuits and systems design - SBCCI ’07. Sociedade Brasileira da Microeltronica 2007 (SBCCI 2007), Rio de Janeiro, Non-EU. https://doi.org/10.1145/1284480.1284540 ( reposiTUm)

Sverdlov, V. A., Karlowatz, G., Ungersboeck, E., & Kosina, H. (2007). Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparabolicity Parameter. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 329–332). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_79 ( reposiTUm)

Pourfath, M., Kosina, H., & Selberherr, S. (2007). The Role of Inelastic Electron-Phonon Interaction on the On-Current and Gate Delay Time of CNT-FETs. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 239–242). http://hdl.handle.net/20.500.12708/69830 ( reposiTUm)

Nentchev, A., & Selberherr, S. (2007). On the Magnetic Field Extraction for On-Chip Inductance Calculation. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 349–352). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_84 ( reposiTUm)

Cervenka, J., Ceric, H., Ertl, O., & Selberherr, S. (2007). Three-Dimensional Sacrificial Etching. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 433–436). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_105 ( reposiTUm)

Ertl, O., Heitzinger, C., & Selberherr, S. (2007). Efficient Coupling of Monte Carlo and Level Set Methods for Topography Simulation. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 417–420). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_101 ( reposiTUm)

Pourfath, M., & Kosina, H. (2007). The Effect of Optical Phonon Scattering on the On-Current and Gate Delay Time of CNT-FETs. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 309–312). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_74 ( reposiTUm)

Orio, R., Ceric, H., & Selberherr, S. (2007). Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 62–63). http://hdl.handle.net/20.500.12708/69804 ( reposiTUm)

Heinzl, R., Mach, G., Schwaha, P., & Selberherr, S. (2007). Labtool - A Managing Software for Computer Courses. In Proceedings European Simulation and Modeling Conference (pp. 488–492). http://hdl.handle.net/20.500.12708/69987 ( reposiTUm)

Pourfath, M., Kosina, H., & Selberherr, S. (2007). Carbon Nanotube Based Transistors: A Computational Study. In AIP Conference Proceedings. American Institute of Physics. https://doi.org/10.1063/1.2730253 ( reposiTUm)

Ungersboeck, E., Sverdlov, V., Kosina, H., & Selberherr, S. (2007). Low-Field Mobility in Strained Silicon Inversion Layers and UTB MOSFETs for Different Substrate Orientations. In AIP Conference Proceedings. American Institute of Physics. https://doi.org/10.1063/1.2730422 ( reposiTUm)

Sverdlov, V., Kosina, H., Grasser, T., & Selberherr, S. (2007). Self-Consistent Wigner Monte Carlo Simulations of Current in Emerging Nanodevices: Role of Tunneling and Scattering. In AIP Conference Proceedings. American Institute of Physics. https://doi.org/10.1063/1.2730425 ( reposiTUm)

Cervenka, J., Ceric, H., & Selberherr, S. (2007). Three-Dimensional Simulation of Sacrificial Etching. In T. Becker, C. Cané, & N. S. Barker (Eds.), Smart Sensors, Actuators, and MEMS III (pp. 452–460). SPIE. https://doi.org/10.1117/12.721979 ( reposiTUm)

Ceric, H., Langer, E., & Selberherr, S. (2007). Modeling of Residual Stresses in Thin Metal Films. In 9#^{th} International Workshop on Stress-Induced Phenomena in Metallization (p. 18). http://hdl.handle.net/20.500.12708/70078 ( reposiTUm)

Ceric, H., Langer, E., & Selberherr, S. (2007). Three-Phase Model for the Volmer-Weber Crystal Growth. In Nanostructures and Carrier Interactions (p. 127). http://hdl.handle.net/20.500.12708/70077 ( reposiTUm)

Karner, M., Gehring, A., Wagner, M., Entner, R., Holzer, S., Gös, W., Vasicek, M., Grasser, T., Kosina, H., & Selberherr, S. (2006). VSP-A Gate Stack Analyzer. In WODIM 2006 14#^{th} Workshop on Dielectrics in Microelectronics Workshop Program and Abstracts (pp. 101–102). http://hdl.handle.net/20.500.12708/69106 ( reposiTUm)

Sverdlov, V., Kosina, H., & Selberherr, S. (2006). Current Transport in Nanoelectronic Semiconductor Devices. In Proceedings IEEE Conference on Emerging Technologies - Nanoelectronics (pp. 490–495). http://hdl.handle.net/20.500.12708/68929 ( reposiTUm)

Selberherr, S. (2006). Tools, Methodologies and Scientific Issues for the Modeling of Advanced Semiconductor Devices. In Abstracts of Workshop on Semiconductors and Micro- & Nano-Technology (pp. 12–15). http://hdl.handle.net/20.500.12708/68999 ( reposiTUm)

Ceric, H., Hollauer, C., & Selberherr, S. (2006). Simulation of Texture Development Caused Stress Build-Up in Electroplated Copper Lines. In Proceedings 13#^{th} International Symposium on the Physical and Failure Analysis of Integrated Circuits (pp. 359–363). http://hdl.handle.net/20.500.12708/69128 ( reposiTUm)

Wittmann, R., Puchner, H., Ceric, H., & Selberherr, S. (2006). Impact of Random Bit Values on NBTI Lifetime of an SRAM Cell. In Proceedings 13#^{th} International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (pp. 41–44). http://hdl.handle.net/20.500.12708/69130 ( reposiTUm)

Holzer, S., Hollauer, C., Ceric, H., Karner, M., Grasser, T., Langer, E., & Selberherr, S. (2006). Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress. In Proceedings 13#^{th} International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (pp. 154–157). http://hdl.handle.net/20.500.12708/69129 ( reposiTUm)

Riedling, K., & Selberherr, S. (2006). A Flexible Web-Based Publication Database. In F. Malpica, A. Tremante, & F. Welsch (Eds.), Proceedings Volume 1 of the 4th International Conference on Education and Information Systems: Technologies and Applications (EISTA 2006) (pp. 262–267). International Institute of Informatics and Systemics (IIIS). http://hdl.handle.net/20.500.12708/69132 ( reposiTUm)

Riedling, K., & Selberherr, S. (2006). A Web-Based Publication Database for Performance Evaluation and Research Documentation. In Proceedings of the ICEE 2006 (pp. R2F-5-R2F-10). International Network for Engineering Education and Research. http://hdl.handle.net/20.500.12708/69135 ( reposiTUm)

Dhar, S., Ungersboeck, E., Kosina, H., Grasser, T., & Selberherr, S. (2006). Analytical Modeling of Electron Mobility in Strained Germanium. In 2006 International Conference on Simulation of Semiconductor Processes and Devices. 2006 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, California, United States of America (the). IEEE. https://doi.org/10.1109/sispad.2006.282833 ( reposiTUm)

Pourfath, M., Kosina, H., Cheong, B. h., Park, W. j., & Selberherr, S. (2006). The Effect of Electron-Phonon Interaction on the Static and Dynamic Response of CNTFETs. In 2006 International Conference on Simulation of Semiconductor Processes and Devices. 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, California, United States of America (the). IEEE. https://doi.org/10.1109/sispad.2006.282873 ( reposiTUm)

Karner, M., Ungersboeck, E., Gehring, A., Holzer, S., Kosina, H., & Selberherr, S. (2006). Strain Effects on Quasi-Bound State Tunneling in Advanced SOI CMOS Technologies. In 2006 International Conference on Simulation of Semiconductor Processes and Devices. 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, California, United States of America (the). IEEE. https://doi.org/10.1109/sispad.2006.282898 ( reposiTUm)

Wittmann, R., Hössinger, A., Cervenka, J., Uppal, S., & Selberherr, S. (2006). Monte Carlo Simulation of Boron Implantation into (100) Germanium. In 2006 International Conference on Simulation of Semiconductor Processes and Devices. 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, California, United States of America (the). IEEE. https://doi.org/10.1109/sispad.2006.282914 ( reposiTUm)

Ceric, H., Hollauer, C., & Selberherr, S. (2006). Three-Dimensional Simulation of Intrinsic Stress Build-Up in Thin Films. In 2006 International Conference on Simulation of Semiconductor Processes and Devices. 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, California, United States of America (the). IEEE. https://doi.org/10.1109/sispad.2006.282869 ( reposiTUm)

Ungersboeck, E., Sverdlov, V., Kosina, H., & Selberherr, S. (2006). Electron Inversion Layer Mobility Enhancement by Uniaxial Stress on (001) and (110) Oriented MOSFETs. In 2006 International Conference on Simulation of Semiconductor Processes and Devices. 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, California, United States of America (the). IEEE. https://doi.org/10.1109/sispad.2006.282834 ( reposiTUm)

Hollauer, C., Ceric, H., & Selberherr, S. (2006). Modeling of Intrinsic Stress Effects in Deposited Thin Films. In Eurosensors 20#^{th} Anniversary Vol. 1 (pp. 324–325). http://hdl.handle.net/20.500.12708/69244 ( reposiTUm)

Holzer, S., Wagner, M., Friembichler, L., Langer, E., Grasser, T., & Selberherr, S. (2006). A Multi-Purpose Optimization Framework for TCAD Applications. In ICCAM 2006 Abstracts of Talks (p. 76). http://hdl.handle.net/20.500.12708/69234 ( reposiTUm)

Ceric, H., Cervenka, J., Langer, E., & Selberherr, S. (2006). Moving Boundary Applications in Process and Interconnect TCAD. In Proceedings Mini-Workshop on Anisotropic Motion Laws (pp. 13–16). http://hdl.handle.net/20.500.12708/69233 ( reposiTUm)

Spevak, M., Heinzl, R., Schwaha, P., Grasser, T., & Selberherr, S. (2006). A Generic Discretization Library. In OOPSLA Proceedings (pp. 95–100). http://hdl.handle.net/20.500.12708/69288 ( reposiTUm)

Wittmann, R., Uppal, S., Hössinger, A., Cervenka, J., & Selberherr, S. (2006). A Study of Boron Implantation into High Ge Content SiGe Alloys. In 210#^{th} ECS Meeting (p. 1). http://hdl.handle.net/20.500.12708/69293 ( reposiTUm)

Ungersböck, S. E., Sverdlov, V., Kosina, H., & Selberherr, S. (2006). Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations. In 210#^{th} ECS Meeting (p. 1). http://hdl.handle.net/20.500.12708/69275 ( reposiTUm)

Ungersböck, S. E., Kosina, H., & Selberherr, S. (2006). The Influence of Stress on Inversion Layer Mobility. In Abstracts Advanced Heterostructure Workshop (p. TH-2). http://hdl.handle.net/20.500.12708/69337 ( reposiTUm)

Karner, M., Holzer, S., Vasicek, M., Gös, W., Wagner, M., Kosina, H., & Selberherr, S. (2006). Numerical Analysis of Gate Stacks. In 210#^{th} ECS Meeting (p. 1). http://hdl.handle.net/20.500.12708/69380 ( reposiTUm)

Sverdlov, V., Kosina, H., & Selberherr, S. (2006). Current Flow in Upcoming Microelectronic Devices. In Proceedings International Caribbean Conference on Devices, Circuits and Systems (pp. 3–8). http://hdl.handle.net/20.500.12708/69021 ( reposiTUm)

Grasser, T., & Selberherr, S. (2006). Modeling of Negative Bias Temperature Instability. In Abstracts 7#^{th} Symposium Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI ERA (pp. 1–2). http://hdl.handle.net/20.500.12708/69092 ( reposiTUm)

Dhar, S., Ungersböck, S. E., Kosina, H., Grasser, T., & Selberherr, S. (2006). Electron Mobility Model for #lt110#gt Stressed Si Including Strain-Dependent Mass. In Abstracts IEEE 2006 Silicon Nanoelectronics Workshop (pp. 153–154). http://hdl.handle.net/20.500.12708/69095 ( reposiTUm)

Sverdlov, V., Ungersböck, S. E., Kosina, H., & Selberherr, S. (2006). Comparative Study of Low-Field Mobilities in Double- and Single-Gate Ultra-Thin Body SOI for Different Substrate Orientations. In Abstracts IEEE 2006 Silicon Nanoelectronics Workshop (pp. 17–18). http://hdl.handle.net/20.500.12708/69094 ( reposiTUm)

Dhar, S., Kosina, H., Karlowatz, G., Ungersböck, S. E., Grasser, T., & Selberherr, S. (2006). A Tensorial High-Field Electron Mobility Model for Strained Silicon. In 2006 International SiGe Technology and Device Meeting Conference Digest (pp. 72–73). http://hdl.handle.net/20.500.12708/69074 ( reposiTUm)

Pourfath, M., Kosina, H., & Selberherr, S. (2006). On the Effect of Scattering on the Performance of Carbon Nanotube Field-Effect Transistors. In Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006 (p. 5). http://hdl.handle.net/20.500.12708/69055 ( reposiTUm)

Dhar, S., Karlowatz, G., Kosina, H., & Selberherr, S. (2006). Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 141–142). http://hdl.handle.net/20.500.12708/69065 ( reposiTUm)

Pourfath, M., Kosina, H., & Selberherr, S. (2006). A Comprehensive Study of Carbon Nanotube Based Transistors: The Effects of Geometrical, Interface Barrier, and Scattering Parameters. In 2006 International Electron Devices Meeting. IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, Non-EU. https://doi.org/10.1109/iedm.2006.346739 ( reposiTUm)

Krishnamohan, T., Jungemann, C., Kim, D., Ungersboeck, E., Selberherr, S., Wong, P., Nishi, Y., & Saraswat, K. (2006). Theoretical Investigation Of Performance In Uniaxially- and Biaxially-Strained Si, SiGe and Ge Double-Gate p-MOSFETs. In 2006 International Electron Devices Meeting. IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, Non-EU. https://doi.org/10.1109/iedm.2006.346938 ( reposiTUm)

Palankovski, V., Marchlewski, A., Ungersböck, S. E., & Selberherr, S. (2006). Identification of Transport Parameters for Gallium Nitride Based Semiconductor Devices. In 5#^{th} Mathmod Vienna Proceedings (pp. 14-1-14–19). http://hdl.handle.net/20.500.12708/69240 ( reposiTUm)

Ungersböck, S. E., Sverdlov, V., Kosina, H., & Selberherr, S. (2006). Modeling of Advanced Semiconductor Devices. In ECS Transactions (pp. 207–216). http://hdl.handle.net/20.500.12708/69241 ( reposiTUm)

Movahhedi, M., Nentchev, A., Ceric, H., Abdipour, A., & Selberherr, S. (2006). A Finite Element Time-Domain Algorithm Based on the Alternating-Direction Implicit Method. In European Microwave Week 2006 Book of Abstracts (pp. 1–4). http://hdl.handle.net/20.500.12708/69243 ( reposiTUm)

Heinzl, R., Spevak, M., Schwaha, P., & Selberherr, S. (2006). A Generic Topology Library. In OOPSLA Proceedings (pp. 85–93). http://hdl.handle.net/20.500.12708/69287 ( reposiTUm)

Pourfath, M., Kosina, H., & Selberherr, S. (2006). Optimizing the Performance of Carbon Nanotube Transistors. In 2006 Sixth IEEE Conference on Nanotechnology. IEEE Conference on Nanotechnology (NANO), Nagoya, Austria. https://doi.org/10.1109/nano.2006.247702 ( reposiTUm)

Ungersböck, S. E., Sverdlov, V., Kosina, H., & Selberherr, S. (2006). Strain Engineering for CMOS Devices. In 2006 8#^{th} International Conference on Solid-State and Integrated Circuit Technology Proceedings (Part 1 of 3) (pp. 124–127). http://hdl.handle.net/20.500.12708/69276 ( reposiTUm)

Nentchev, A., Cervenka, J., Marnaus, G., Enichlmair, H., & Selberherr, S. (2006). Heatring - Smart Investigation of Temperature Impact on Integrated Circuit Devices. In Collection of Papers Presented at the 12#^{th} International Workshop on Thermal Investigation of ICs and Systems (pp. 235–238). http://hdl.handle.net/20.500.12708/69238 ( reposiTUm)

Heinzl, R., Spevak, M., Schwaha, P., Grasser, T., & Selberherr, S. (2006). Performance Analysis for High-Precision Interconnect Simulation. In The 2006 European Simulation and Modelling Conference (pp. 113–116). http://hdl.handle.net/20.500.12708/69280 ( reposiTUm)

Karlowatz, G., Ungersböck, S. E., Wessner, W., Kosina, H., & Selberherr, S. (2006). Analysis of Hole Transport in Arbitrarily Strained Germanium. In 210#^{th} ECS Meeting (p. 1). http://hdl.handle.net/20.500.12708/69284 ( reposiTUm)

Sverdlov, V., Ungersböck, S. E., Kosina, H., & Selberherr, S. (2006). Orientation Dependence of the Low Field Mobility in Double- and Single-Gate SOI FETs. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 178–181). http://hdl.handle.net/20.500.12708/69231 ( reposiTUm)

Pourfath, M., Kosina, H., & Selberherr, S. (2006). Optimal Design for Carbon Nanotube Transistors. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 210–213). http://hdl.handle.net/20.500.12708/69232 ( reposiTUm)

Sheikholeslami, A., Parhami, F., Puchner, H., & Selberherr, S. (2006). Planarization of Silicon Dioxide and Silicon Nitride Passivation Layers. In International Conference on Nanoscience and Technology (ICNT 2006) (pp. 163–164). http://hdl.handle.net/20.500.12708/69229 ( reposiTUm)

Sheikholeslami, A., Heinzl, R., Holzer, S., Heitzinger, C., Spevak, M., Leicht, M., Häberlen, O., Fugger, J., Badrieh, F., Parhami, F., Puchner, H., Grasser, T., & Selberherr, S. (2006). Applications of Two- and Three-Dimensional General Topography Simulator in Semiconductor Manufacturing Processes. In Proceedings of the 14#^{th} Iranian Conference on Electrical Engineering ICEE 2006 (p. 4). http://hdl.handle.net/20.500.12708/69060 ( reposiTUm)

Sheikholeslami, A., Selberherr, S., Parhami, F., & Puchner, H. (2006). Planarization of Passivation Layers during Manufacturing Processes of Image Sensors. In Proceedings of the 6#^{th} International Conference on Numerical Simulation of Optoelectronic Devices (pp. 35–36). http://hdl.handle.net/20.500.12708/69198 ( reposiTUm)

Holzer, S., Wagner, M., Sheikholeslami, A., Karner, M., Span, G., Grasser, T., & Selberherr, S. (2006). An Extendable Multi-Purpose Simulation and Optimization Framework for Thermal Problems in TCAD Applications. In Collection of Papers Presented at the 12#^{th} International Workshop on Thermal Investigation of ICs and Systems (pp. 239–244). http://hdl.handle.net/20.500.12708/69237 ( reposiTUm)

Sverdlov, V., Kosina, H., Ringhofer, C., Nedjalkov, M., & Selberherr, S. (2006). Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator. In I. Lirkov, S. Margenov, & J. Waśniewski (Eds.), Large-Scale Scientific Computing (pp. 594–601). Springer Berlin Heidelberg. https://doi.org/10.1007/11666806_68 ( reposiTUm)

Gehring, A., Sverdlov, V., Kosina, H., & Selberherr, S. (2005). Quantum Transport in Ultra-Scaled Double-gate MOSFETs: A Wigner Function-based Monte Carlo Approach. In EUROSOI 2005 First Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (pp. 71–72). http://hdl.handle.net/20.500.12708/68452 ( reposiTUm)

Pourfath, M., Kosina, H., Cheong, B. H., Park, W. J., & Selberherr, S. (2005). The effect of device geometry on the static and dynamic response of carbon nanotube field effect transistors. In 5th IEEE Conference on Nanotechnology, 2005. IEEE Conference on Nanotechnology (NANO), Nagoya, Austria. https://doi.org/10.1109/nano.2005.1500641 ( reposiTUm)

Pourfath, M., Kosina, H., & Selberherr, S. (2005). A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors. In 15#^{th} Workshop on Modelling and Simulation of Electron Devices (pp. 95–96). http://hdl.handle.net/20.500.12708/68508 ( reposiTUm)

Pourfath, M., Cheong, B.-H., Park, W., Kosina, H., & Selberherr, S. (2005). High Performance Carbon Nanotube Field Effect Transistor with the Potential for Tera Level Integration. In ULIS 2005 6#^{th} International Conference on Ultimate Integration of Silicon Proceedings of the Conference (pp. 95–98). http://hdl.handle.net/20.500.12708/68461 ( reposiTUm)

Holzer, S., Hollauer, C., Ceric, H., Wagner, S., Entner, R., Langer, E., Grasser, T., & Selberherr, S. (2005). Three-Dimensional Transient Electro-Thermal Interconnect Simulation for Stress and Electromigration Analysis. In NSTI Nanotech Technical Proceedings (pp. 620–623). http://hdl.handle.net/20.500.12708/68483 ( reposiTUm)

Gehring, A., & Selberherr, S. (2005). Current Transport Models for Nano-Scale Semiconductor Devices. In Proc. 9th World Multi-Conf.on Systemics, Cybernetics and Informatics (pp. 366–371). http://hdl.handle.net/20.500.12708/68512 ( reposiTUm)

Wittmann, R., Puchner, H., Hinh, L., Ceric, H., Gehring, A., & Selberherr, S. (2005). Simulation of Dynamic NBTI Degradation for a 90 nm CMOS Technology. In NSTI Nanotech Technical Proceedings (pp. 29–32). http://hdl.handle.net/20.500.12708/68488 ( reposiTUm)

Dhar, S., Kosina, H., Palankovski, V., Ungersböck, S. E., & Selberherr, S. (2005). A Physically-Based Electron Mobility Model for Strained Si Devices. In NSTI Nanotech Technical Proceedings (pp. 13–16). http://hdl.handle.net/20.500.12708/68487 ( reposiTUm)

Pourfath, M., Gehring, A., Cheong, B.-H., Park, W. J., Kosina, H., & Selberherr, S. (2005). Vertically Grown Coaxial Double Gate Carbon Nanotube Field Effect Transistors for Tera Level Integration. In NSTI Nanotech Technical Proceedings (pp. 128–131). http://hdl.handle.net/20.500.12708/68486 ( reposiTUm)

Kosina, H., Sverdlov, V., Ringhofer, Ch., Nedjalkov, M., & Selberherr, S. (2005). Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator. In Abstracts of the 5th International Conference on Large-Scale Scientific Computations (pp. 36–37). http://hdl.handle.net/20.500.12708/68494 ( reposiTUm)

Pourfath, M., Park, W. J., Kosina, H., & Selberherr, S. (2005). Fast Convergent Schrödinger-Poisson Solver for the Static and Dynamic Analysis of Carbon Nanotube Field Effect Transistors. In Abstracts of the 5th International Conference on Large-Scale Scientific Computations (pp. 50–51). http://hdl.handle.net/20.500.12708/68495 ( reposiTUm)

Entner, R., Gehring, A., Kosina, H., Grasser, T., & Selberherr, S. (2005). Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices. In NSTI Nanotech Technical Proceedings (pp. 45–48). http://hdl.handle.net/20.500.12708/68484 ( reposiTUm)

Dhar, S., Karlowatz, G., Ungersböck, S. E., Kosina, H., & Selberherr, S. (2005). Modeling of Velocity-Field Characteristics in Strained Silicon. In Proceedings of the XIII International Workshop on Physics of Semiconductor Devices (pp. 1060–1063). http://hdl.handle.net/20.500.12708/68922 ( reposiTUm)

Wittmann, R., Puchner, H., Hinh, L., Ceric, H., Gehring, A., & Selberherr, S. (2005). Impact of NBTI-driven Parameter Degradation on Lifetime of a 90nm p-MOSFET. In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 99–102). http://hdl.handle.net/20.500.12708/68996 ( reposiTUm)

Pourfath, M., Kosina, H., & Selberherr, S. (2005). Rigorous Modeling of Carbon Nanotube Field Effect Transistors. In Abstracts Collection Seventh International Conference on New Phenomena in Mesoscopic Systems Fifth International Conference on Surface and Interfaces in Mesoscopic Devices (pp. 155–156). http://hdl.handle.net/20.500.12708/68917 ( reposiTUm)

Sverdlov, V., Kosina, H., & Selberherr, S. (2005). Modeling Current Transport in Ultra-Scaled Field Effect Transistors. In Proceedings of the 2005 IEEE Conference on Electron Devices and Solid-State Circuits (pp. 385–390). http://hdl.handle.net/20.500.12708/68918 ( reposiTUm)

Holzer, S., & Selberherr, S. (2005). Material Parameter Identification for Interconnect Analysis. In Proceedings of the XIII International Workshop on Physics of Semiconductor Devices (pp. 635–641). http://hdl.handle.net/20.500.12708/68920 ( reposiTUm)

Hollauer, C., Ceric, H., & Selberherr, S. (2005). Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress. In 208#^{th} ECS Meeting (p. 1). http://hdl.handle.net/20.500.12708/68909 ( reposiTUm)

Ceric, H., Hollauer, C., & Selberherr, S. (2005). Microstructure and Stress Aspects of Electromigration Modeling. In 8#^{th} International Workshop on Stress-Induced Phenomena in Metallization (p. P 17). http://hdl.handle.net/20.500.12708/68911 ( reposiTUm)

Ceric, H., Deshpande, V., Hollauer, C., Holzer, S., Grasser, T., & Selberherr, S. (2005). Comprehensive Analysis of Vacancy Dynamics Due to Electromigration. In Proceedings of the 12#^{th} International Symposium on the Physical & Failure Analysis of Integrated Circuits (pp. 100–103). http://hdl.handle.net/20.500.12708/68912 ( reposiTUm)

Karner, M., Gehring, A., Holzer, S., Kosina, H., & Selberherr, S. (2005). Efficient Calculation of Quasi-Bound State Tunneling through Stacked Dielectrics. In 208#^{th} ECS Meeting (p. 1). http://hdl.handle.net/20.500.12708/68910 ( reposiTUm)

Hollauer, C., Holzer, S., Ceric, H., Wagner, S., Grasser, T., & Selberherr, S. (2005). Investigation of Thermo-Mechanical Stress in Modern Interconnect Layouts. In Proceedings of The Sixth International Congress on Thermal Stresses (pp. 637–640). Schriftenreihe der Technischen Universität Wien. http://hdl.handle.net/20.500.12708/68513 ( reposiTUm)

Wittmann, R., Hössinger, A., & Selberherr, S. (2005). Monte Carlo Simulation of Ion Implantation for Doping of Strained Silicon MOSFETs. In 2005 International Conference On Simulation of Semiconductor Processes and Devices. 2005 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. IEEE. https://doi.org/10.1109/sispad.2005.201505 ( reposiTUm)

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Hollauer, Ch., Ceric, H., & Selberherr, S. (2005). Three-Dimensional Simulation of Stress Dependent Thermal Oxidation. In 2005 International Conference On Simulation of Semiconductor Processes and Devices. 2005 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. IEEE. https://doi.org/10.1109/sispad.2005.201503 ( reposiTUm)

Entner, R., Gehring, A., Kosina, H., Grasser, T., & Selberherr, S. (2005). Modeling of Tunneling Currents for Highly Degraded CMOS Devices. In 2005 International Conference On Simulation of Semiconductor Processes and Devices. 2005 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. IEEE. https://doi.org/10.1109/sispad.2005.201512 ( reposiTUm)

Pourfath, M., Kosina, H., Cheong, B.-H., Park, W. J., & Selberherr, S. (2005). Improving DC and AC Characteristics of Ohmic Contact Carbon Nanotube Field Effect Transistors. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 541–544). http://hdl.handle.net/20.500.12708/68625 ( reposiTUm)

Sverdlov, V., Gehring, A., Kosina, H., & Selberherr, S. (2005). Tunneling and Intersubband Coupling in Ultra-Thin Body Double-Gate MOSFETs. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 93–96). http://hdl.handle.net/20.500.12708/68624 ( reposiTUm)

Wessner, W., Ceric, H., Cervenka, J., & Selberherr, S. (2005). Dynamic Mesh Adaptation for Three-Dimensional Electromigration Simulation. In 2005 International Conference On Simulation of Semiconductor Processes and Devices. 2005 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. IEEE. https://doi.org/10.1109/sispad.2005.201494 ( reposiTUm)

Nentchev, A., Sabelka, R., & Selberherr, S. (2005). Simplification of Spacial Structures by Simulation with Periodic Boundary Conditions. In 2005 Proceedings Twenty Second International VLSI Multilevel Interconnection Conference (pp. 547–552). http://hdl.handle.net/20.500.12708/68736 ( reposiTUm)

Nentchev, A., Sabelka, R., Wessner, W., & Selberherr, S. (2005). On-Chip Interconnect Simulation of Parasitic Capacitances in Periodic Structures. In The 2005 European Simulation and Modelling Conference Proceedings (pp. 420–424). http://hdl.handle.net/20.500.12708/68731 ( reposiTUm)

Al-Ani, E., Heinzl, R., Schwaha, P., Grasser, T., & Selberherr, S. (2005). Three-Dimensional State-Of-The-Art Topography Simulation. In The 2005 European Simulation and Modelling Conference Proceedings (pp. 430–432). http://hdl.handle.net/20.500.12708/68733 ( reposiTUm)

Sheikholeslami, A., Parhami, F., Heinzl, R., Al-Ani, E., Heitzinger, C., Badrieh, F., Puchner, H., Grasser, T., & Selberherr, S. (2005). Applications of Three-Dimensional Topography Simulation in the Design of Interconnect Lines. In 2005 International Conference On Simulation of Semiconductor Processes and Devices. 2005 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. IEEE. https://doi.org/10.1109/sispad.2005.201504 ( reposiTUm)

Sheikholeslami, A., Al-Ani, E., Heinzl, R., Heitzinger, C., Parhami, F., Badrieh, F., Puchner, H., Grasser, T., & Selberherr, S. (2005). Level Set Method Based General Topography Simulator and its Application in Interconnect Processes. In ULIS 2005 6#^{th} International Conference on Ultimate Integration of Silicon (pp. 139–142). http://hdl.handle.net/20.500.12708/68462 ( reposiTUm)

Sheikholeslami, A., Holzer, S., Heitzinger, C., Leicht, M., Häberlen, O., Fugger, J., Grasser, T., & Selberherr, S. (2005). Inverse Modeling of Oxid Deposition Using Measurements of a TEOS CVD Process. In 2005 PhD Research in Microelectronics and Electronics (pp. 279–282). http://hdl.handle.net/20.500.12708/68518 ( reposiTUm)

Holzer, S., Hollauer, C., Ceric, H., Wagner, S., Langer, E., Grasser, T., & Selberherr, S. (2005). Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress. In J. Lopez, F. V. Fernandez, J. M. Lopez-Villegas, & J. M. de la Rosa (Eds.), VLSI Circuits and Systems II (pp. 380–387). SPIE. https://doi.org/10.1117/12.608414 ( reposiTUm)

Sheikholeslami, A., Heitzinger, C., Al-Ani, E., Heinzl, R., Grasser, T., & Selberherr, S. (2004). Three-Dimensional Surface Evolution Using a Level Set Method. In Proceedings of the Iranian Ph.D. Students Seminar on Computer Science, Mathematics and Statistics (ICSMS). Iranian Ph.D. Students Seminar on Computer Science, Mathematics and Statistics (ICSMS), Paris, Austria. http://hdl.handle.net/20.500.12708/68457 ( reposiTUm)

Heitzinger, C., Sheikholeslami, A., Fugger, J., Häberlen, O., Leicht, M., & Selberherr, S. (2004). A Case Study in Predictive Three-Dimensional Topography Simulation Based on a Level-Set Algorithm. In 205#^{th} ECS Meeting (pp. 132–142). http://hdl.handle.net/20.500.12708/68427 ( reposiTUm)

Gehring, A., Kosina, H., & Selberherr, S. (2003). Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 105–106). http://hdl.handle.net/20.500.12708/68423 ( reposiTUm)

Kosina, H., Nedjalkov, M., & Selberherr, S. (2003). A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 35–36). http://hdl.handle.net/20.500.12708/69016 ( reposiTUm)

Kosina, H., Gritsch, M., Grasser, T., Linton, T., Yu, S., Giles, M., & Selberherr, S. (2001). An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (p. 67). http://hdl.handle.net/20.500.12708/68337 ( reposiTUm)

Nedjalkov, M., Kosina, H., Kosik, R., & Selberherr, S. (2001). A Space Dependent Wigner Equation Including Phonon Interaction. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (p. 4). http://hdl.handle.net/20.500.12708/68338 ( reposiTUm)

Heitzinger, C., & Selberherr, S. (2000). Extensible TCAD optimization framework combining gradient-based and genetic optimizers. In B. Courtois, S. N. Demidenko, & L. Y. Lau (Eds.), Design, Modeling, and Simulation in Microelectronics (pp. 279–289). SPIE. https://doi.org/10.1117/12.405424 ( reposiTUm)

Kirchauer, H., & Selberherr, S. (1998). A Three-Dimensional Photolithography Simulator Including Rigorous Nonplanar Exposure Simulation for Off-Axis Illumination. In Proceedings of SPIE Optical Microlithography (p. 3334·86). http://hdl.handle.net/20.500.12708/74569 ( reposiTUm)

Strasser, R., & Selberherr, S. (1998). Parallel and Distributed TCAD Simulations using Dynamic Load Balancing. In Simulation of Semiconductor Processes and Devices 1998 (pp. 89–92). Springer-Verlag. https://doi.org/10.1007/978-3-7091-6827-1_25 ( reposiTUm)

Selberherr, S. (1997). The State of the Art in Technology Computer-Aided Design. In Abstracts Ultra Low Voltage Low Power Research Symposium (p. 1). http://hdl.handle.net/20.500.12708/74572 ( reposiTUm)

Köpf, C., Kosina, H., & Selberherr, S. (1996). Anisotropic Mobility Model for GaInAs Covering Full Composition and Strain Range in the GaAs-InAs System. In Abstracts International Symposium on Compound Semiconductors (ISCS) (p. 30). http://hdl.handle.net/20.500.12708/74570 ( reposiTUm)

Selberherr, S. (1996). The MINIMOS Simulator and TUV Perspective on TCAD. In Symposium on Computer-Aided Design of IC Processes and Devices (pp. 1–14). http://hdl.handle.net/20.500.12708/68315 ( reposiTUm)

Mlekus, R., Ledl, Ch., Strasser, E., & Selberherr, S. (1995). Polygonal Geometry Reconstruction after Cellular Etching or Deposition Simulation. In Simulation of Semiconductor Devices and Processes (pp. 50–53). https://doi.org/10.1007/978-3-7091-6619-2_11 ( reposiTUm)

Pichler, Ch., Khalil, N., Schrom, G., & Selberherr, S. (1995). TCAD Optimization Based on Task-Level Framework Services. In Simulation of Semiconductor Devices and Processes (pp. 70–73). https://doi.org/10.1007/978-3-7091-6619-2_16 ( reposiTUm)

Rieger, G., Halama, S., & Selberherr, S. (1995). A Programmable Tool for Interactive Wafer-State Level Data Processing. In Simulation of Semiconductor Devices and Processes (pp. 58–61). https://doi.org/10.1007/978-3-7091-6619-2_13 ( reposiTUm)

Köpf, C., Kosina, H., & Selberherr, S. (1995). Mobility Model for III-V Compounds Suited for Hydrodynamic Device Simulation. In Proceedings Intl.Symposium on Compound Semiconductors (pp. 1255–1260). http://hdl.handle.net/20.500.12708/68401 ( reposiTUm)

Leitner, E., Bohmayr, W., Fleischmann, P., Strasser, E., & Selberherr, S. (1995). 3D TCAD at TU Vienna. In 3-Dimensional Process Simulation (pp. 136–161). https://doi.org/10.1007/978-3-7091-6905-6_7 ( reposiTUm)

Burenkov, A., Bohmayr, W., Lorenz, J., Ryssel, H., & Selberherr, S. (1995). Analytical Model for Phosphorus Large Angle Tilted Implantation. In Simulation of Semiconductor Devices and Processes (pp. 488–491). https://doi.org/10.1007/978-3-7091-6619-2_118 ( reposiTUm)

Bohmayr, W., Burenkov, A., Lorenz, J., Ryssel, H., & Selberherr, S. (1995). Statistical Accuracy and CPU Time Characteristic of Three Trajectory Split Methods for Monte Carlo Simulation of Ion Implantation. In Simulation of Semiconductor Devices and Processes (pp. 492–495). https://doi.org/10.1007/978-3-7091-6619-2_119 ( reposiTUm)

Leitner, E., & Selberherr, S. (1995). Three-Dimensional Grid Adaptation Using a Mixed-Element Decomposition Method. In Simulation of Semiconductor Devices and Processes (pp. 464–467). https://doi.org/10.1007/978-3-7091-6619-2_112 ( reposiTUm)

Selberherr, S., Fischer, C., Halama, S., Pichler, C., Rieger, G., Schrom, G., & Simlinger, T. (1995). The IC Processes of the Future: Advances in Device Structures and Device Simulation Techniques. In Proceedings IV EBMICRO (pp. 87–114). http://hdl.handle.net/20.500.12708/68395 ( reposiTUm)

Khalil, N., Faricelli, J., Huang, C.-L., & Selberherr, S. (1995). Two-Dimensional Dopant Profiling of Submicron MOSFETs Using Nonlinear Least Squares Inverse Modeling. In Proceedings Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors (pp. 6.1-6.9). http://hdl.handle.net/20.500.12708/68396 ( reposiTUm)

Mukai, M., Tatsumi, T., Nakauchi, N., Kobayashi, T., Koyama, K., Komatsu, Y., Bauer, R., Rieger, G., & Selberherr, S. (1995). The Simulation System for Three-Dimensional Capacitance and Current Density Calculation with a User Friendly GUI. In Simulation of Semiconductor Devices and Processes (pp. 151–154). https://doi.org/10.1007/978-3-7091-6619-2_35 ( reposiTUm)

Leitner, E., & Selberherr, S. (1995). Adaptive Tessellation for the Three-Dimensional Simulation of Doping Profiles. In Proceedings Solid-State and Integrated-Circuit Technology Conference (pp. 610–612). http://hdl.handle.net/20.500.12708/68419 ( reposiTUm)

Bohmayr, W., & Selberherr, S. (1995). Trajectory Split Method for Monte Carlo Simulation of Ion Implantation Demonstrated by Three-Dimensional Poly-Buffered LOCOS Field Oxide Corners. In Proceedings VLSI Technology, Systems and Applications Symposium (pp. 104–107). http://hdl.handle.net/20.500.12708/68400 ( reposiTUm)

Puchner, H., & Selberherr, S. (1995). A Two-Dimensional Dopant Diffusion Model for Polysilicon. In Abstracts Meeting on Impurity Diffusion and Defects in Silicon and Related Materials (pp. 16–17). http://hdl.handle.net/20.500.12708/68399 ( reposiTUm)

Simlinger, T., Kosina, H., Rottinger, M., & Selberherr, S. (1995). MINIMOS-NT: A Generic Simulator for Complex Semiconductor Devices. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 83–86). http://hdl.handle.net/20.500.12708/68413 ( reposiTUm)

Rieger, G., & Selberherr, S. (1995). The PIF Editor - a Data Processor for the VISTA TCAD Framework. In Proceedings High Performance Computing Asia 1995 Conference (p. 11). http://hdl.handle.net/20.500.12708/68412 ( reposiTUm)

Kosina, H., Harrer, M., Vogl, P., & Selberherr, S. (1995). A Monte Carlo Transport Model Based on Spherical Harmonics Expansion of the Valence Bands. In Simulation of Semiconductor Devices and Processes (pp. 396–399). https://doi.org/10.1007/978-3-7091-6619-2_96 ( reposiTUm)

Rottinger, M., Simlinger, T., & Selberherr, S. (1995). Two-Dimensional Transient Simulation of Charge-Coupled Devices Using MINIMOS NT. In Simulation of Semiconductor Devices and Processes (pp. 440–443). https://doi.org/10.1007/978-3-7091-6619-2_106 ( reposiTUm)

Bohmayr, W., & Selberherr, S. (1995). Effiziente Methoden für die Monte Carlo Simulation der Ionenimplantation in multidimensionale kristalline Halbleiterstrukturen. In Tagungsbericht Seminar Grundlagen und Technologie elektronischer Bauelemente (pp. 63–66). http://hdl.handle.net/20.500.12708/68397 ( reposiTUm)

Leitner, E., & Selberherr, S. (1995). Simulation von thermischen Diffusionsprozessen in dreidimensionalen Halbleiterstrukturen. In Seminar Grundlagen und Technologie elektronischer Bauelemente (pp. 67–70). http://hdl.handle.net/20.500.12708/68398 ( reposiTUm)

Puchner, H., & Selberherr, S. (1995). Simulation of Ion Implantation Using the Four-Parameter Kappa Distribution Function. In Proceedings Solid-State and Integrated-Circuit Technology Conference (pp. 295–297). http://hdl.handle.net/20.500.12708/68415 ( reposiTUm)

Khalil, N., Nanz, G., Rios, R., & Selberherr, S. (1995). A B-Splines Regression Technique to Determine One-Dimensional MOS Doping Profiles. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 191–194). http://hdl.handle.net/20.500.12708/68414 ( reposiTUm)

Bohmayr, W., & Selberherr, S. (1995). Investigation of Channeling in Field Oxide Corners by Three-Dimensional Monte Carlo Simulation of Ion Implantation. In Proceedings Solid-State and Integrated-Circuit Technology Conference (pp. 304–306). http://hdl.handle.net/20.500.12708/68416 ( reposiTUm)

Schrom, G., Liu, D., Fischer, C., Pichler, C., Svensson, Ch., & Selberherr, S. (1995). VLSI Performance Analysis Method for Low-Voltage Circuit Operation. In Proceedings Solid-State and Integrated-Circuit Technology Conference (pp. 328–330). http://hdl.handle.net/20.500.12708/68417 ( reposiTUm)

Simlinger, T., Deutschmann, R., Fischer, C., Kosina, H., & Selberherr, S. (1995). Two-Dimensional Hydrodynamic Simulation of High Electron Mobility Transistors Using a Block Iterative Scheme in Combination with Full Newton Method. In Proceedings Solid-State and Integrated-Circuit Technology Conference (pp. 589–591). http://hdl.handle.net/20.500.12708/68418 ( reposiTUm)

Köpf, C., Kosina, H., & Selberherr, S. (1995). Mobility Model for III-V Compounds Suited for Hydrodynamic Device Simulation. In Abstracts Intl.Symposium on Compound Semiconductors (p. 108). http://hdl.handle.net/20.500.12708/74571 ( reposiTUm)

Rieger, G., Halama, S., & Selberherr, S. (1995). A Graphical Editor for TCAD Purposes. In Abstracts SIAM Conf. On Geometric Design (p. A17). http://hdl.handle.net/20.500.12708/68314 ( reposiTUm)

Fischer, C., & Selberherr, S. (1994). Optimum Scaling of Non-Symmetric Jacobian Matrices for Threshold Pivoting Preconditioners. In Proceedings NUPAD V, Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (pp. 123–126). http://hdl.handle.net/20.500.12708/68393 ( reposiTUm)

Khalil, N., Faricelli, J., Bell, D., & Selberherr, S. (1994). A Novel Method for Extracting the Two-Dimensional Doping Profile of a Sub-Half Micron MOSFET. In Proceedings Symposium on VLSI Technology (pp. 131–132). http://hdl.handle.net/20.500.12708/68394 ( reposiTUm)

Puchner, H., & Selberherr, S. (1994). Dynamic Grain-Growth and Static Clustering Effects on Dopant Diffusion in Polysilicon. In Proceedings NUPAD V, Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (pp. 109–112). http://hdl.handle.net/20.500.12708/68392 ( reposiTUm)

Halama, S., Fasching, F., Fischer, C., Kosina, H., Leitner, E., Pichler, Ch., Pimingstorfer, H., Puchner, H., Rieger, G., Schrom, G., Simlinger, T., Stiftinger, M., Stippel, H., Strasser, E., Tuppa, W., Wimmer, K., & Selberherr, S. (1993). The Viennese Integrated System for Technology CAD Applications. In Technology CAD Systems (pp. 197–236). https://doi.org/10.1007/978-3-7091-9315-0_10 ( reposiTUm)

Bauer, R., Stiftinger, M., & Selberherr, S. (1993). Capacitance Calculation of VLSI Multilevel Wiring Structures. In Proceedings VPAD Workshop (pp. 142–143). http://hdl.handle.net/20.500.12708/68384 ( reposiTUm)

Pichler, Ch., & Selberherr, S. (1993). Process Flow Representation within the VISTA Framework. In Simulation of Semiconductor Devices and Processes (pp. 25–28). https://doi.org/10.1007/978-3-7091-6657-4_5 ( reposiTUm)

Deutschmann, R., Fischer, C., Sala, C., & Selberherr, S. (1993). Evaluation of Effective Device Parameters by Comparison of Measured and Simulated C-V Characteristics for Conventional and Pseudomorphic HEMTs. In Simulation of Semiconductor Devices and Processes (pp. 461–464). https://doi.org/10.1007/978-3-7091-6657-4_114 ( reposiTUm)

Strasser, E., & Selberherr, S. (1993). A General Simulation Method for Etching and Deposition Processes. In Simulation of Semiconductor Devices and Processes (pp. 357–360). https://doi.org/10.1007/978-3-7091-6657-4_88 ( reposiTUm)

Brand, H., & Selberherr, S. (1993). Electrothermal Analysis of Latch-Up in an IGT. In Proceedings VPAD Workshop (pp. 116–117). http://hdl.handle.net/20.500.12708/68382 ( reposiTUm)

Stippel, H., & Selberherr, S. (1993). Three Dimensional Monte Carlo Simulation of Ion Implantation with Octree Based Point Location. In Proceedings VPAD Workshop (pp. 122–123). http://hdl.handle.net/20.500.12708/68383 ( reposiTUm)

Strasser, E., Wimmer, K., & Selberherr, S. (1993). A New Method for Simulation of Etching and Deposition Processes. In Proceedings VPAD Workshop (pp. 54–55). http://hdl.handle.net/20.500.12708/68381 ( reposiTUm)

Schrom, G., Selberherr, S., Unterleitner, F., Trontelj, J., & Kunc, V. (1993). Analysis of a CMOS-Compatible Vertical Bipolar Transistor. In Simulation of Semiconductor Devices and Processes (pp. 261–264). https://doi.org/10.1007/978-3-7091-6657-4_64 ( reposiTUm)

Heinreichsberger, O., Thurner, M., & Selberherr, S. (1993). Practical Use of a Hierarchical Linear Solver Concept for 3D MOS Device Simulation. In Simulation of Semiconductor Devices and Processes (pp. 85–88). https://doi.org/10.1007/978-3-7091-6657-4_20 ( reposiTUm)

Hackel, M., Kosina, H., & Selberherr, S. (1993). Electron Transport in Silicon Dioxide at Intermediate and High Electric Fields. In Simulation of Semiconductor Devices and Processes (pp. 65–68). https://doi.org/10.1007/978-3-7091-6657-4_15 ( reposiTUm)

Habaš, P., Heinreichsberger, O., & Selberherr, S. (1992). Transient two-dimensional numerical analysis of the charge-pumping experiment. In Microelectronic Engineering (pp. 687–690). https://doi.org/10.1016/0167-9317(92)90522-s ( reposiTUm)

Heinreichsberger, O., Habaš, P., & Selberherr, S. (1992). Analysis of geometric charge-pumping components in a thin-film SOI device. In Microelectronic Engineering (pp. 819–822). https://doi.org/10.1016/0167-9317(92)90552-3 ( reposiTUm)

Halama, S., Fasching, F., Pimingstorfer, H., Tuppa, W., & Selberherr, S. (1992). Consistent User Interface and Task-Level Architecture of a TCAD System. In Proceedings NUPAD IV (pp. 237–242). http://hdl.handle.net/20.500.12708/68377 ( reposiTUm)

Habas, P., Lugbauer, A., & Selberherr, S. (1992). Two-Dimensional Numerical Modeling of Interband Tunneling Accounting for Nonuniform Electric Field. In Proceedings NUPAD IV (pp. 135–140). http://hdl.handle.net/20.500.12708/68375 ( reposiTUm)

Habas, P., & Selberherr, S. (1992). A Closed-Loop Extraction of the Spatial Distribution of Interface Traps Based on Numerical Model of the Charge-Pumping Experiment. In Proceedings SSDM 92 Conference (pp. 170–172). http://hdl.handle.net/20.500.12708/68378 ( reposiTUm)

Brand, H., & Selberherr, S. (1992). Two Dimensional Simulation of Thermal Runaway in a Nonplanar GTO-Thyristor. In Proceedings NUPAD IV (pp. 129–134). http://hdl.handle.net/20.500.12708/68374 ( reposiTUm)

Stippel, H., Halama, S., Hobler, G., Wimmer, K., & Selberherr, S. (1992). Adaptive Grid for Monte Carlo Simulation of Ion Implantation. In Proceedings NUPAD IV (pp. 231–236). http://hdl.handle.net/20.500.12708/68376 ( reposiTUm)

Kosina, H., & Selberherr, S. (1992). A Monte Carlo MOSFET Simulator Based on a New Method for the Poisson-Transport Iteration. In Proceedings NUPAD IV (pp. 117–122). http://hdl.handle.net/20.500.12708/68373 ( reposiTUm)

Fasching, F., Fischer, C., Halama, S., Pimingstorfer, H., Read, H., Selberherr, S., Stippel, H., Verhas, P., & Wimmer, K. (1991). An Integrated Technology CAD Environment. In Proceedings VLSI Technology, Systems and Applications Symposium (pp. 147–151). http://hdl.handle.net/20.500.12708/68353 ( reposiTUm)

Heinreichsberger, O., Selberherr, S., & Stiftinger, M. (1991). Massively Parallel Solution of the Three-Dimensional Van Roosbroeck Equations. In Abstracts NUMSIM’91 (pp. 81–88). http://hdl.handle.net/20.500.12708/68354 ( reposiTUm)

Fasching, F., Fischer, C., Selberherr, S., Stippel, H., Tuppa, W., & Read, H. (1991). A PIF Implementation for TCAD Purposes. In Proceedings SISDEP 91 (pp. 477–482). http://hdl.handle.net/20.500.12708/68370 ( reposiTUm)

Pimingstorfer, H., Halama, S., Selberherr, S., Wimmer, K., & Verhas, P. (1991). A Technology CAD Shell. In Proceedings SISDEP 91 (pp. 409–416). http://hdl.handle.net/20.500.12708/68369 ( reposiTUm)

Kosina, H., Lindorfer, Ph., & Selberherr, S. (1991). Monte-Carlo — Poisson coupling using transport coefficients. In Microelectronic Engineering (pp. 53–56). https://doi.org/10.1016/0167-9317(91)90182-d ( reposiTUm)

Halama, S., Hobler, G., Wimmer, K., & Selberherr, S. (1991). Eine neue Methode zur Simulation der Diffusion in allgemeinen Strukturen. In Tagungsbericht Seminar Grundlagen und Technologie elektronischer Bauelemente (pp. 20–26). http://hdl.handle.net/20.500.12708/68356 ( reposiTUm)

Heinreichsberger, O., Selberherr, S., & Stiftinger, M. (1991). 3D MOS Device Simulation on a Connection Machine. In Abstracts SIAM Conf. in Parallel Processing for Scientific Computing (pp. 388–393). http://hdl.handle.net/20.500.12708/68355 ( reposiTUm)

Selberherr, S., Fischer, C., Halama, S., Pimingstorfer, H., Read, H., Stippel, H., Verhas, P., & Wimmer, K. (1991). The Viennese TCAD System. In Proceedings VPAD Workshop (pp. 32–35). http://hdl.handle.net/20.500.12708/68365 ( reposiTUm)

Fasching, F., Fischer, C., Halama, S., Pimingstorfer, H., Read, H., Selberherr, S., Stippel, H., Tuppa, W., Verhas, P., & Wimmer, K. (1991). A new open technology CAD system. In Microelectronic Engineering (pp. 217–220). https://doi.org/10.1016/0167-9317(91)90216-z ( reposiTUm)

Wimmer, K., Bauer, R., Halama, S., Hobler, G., & Selberherr, S. (1991). Simulation nichtplanarer Herstellungsprozesse mit PROMIS. In Tagungsbericht Seminar Grundlagen und Technologie elektronischer Bauelemente (pp. 10–19). http://hdl.handle.net/20.500.12708/68357 ( reposiTUm)

Kosina, H., & Selberherr, S. (1991). Analysis of Filter Techniques for Monte-Carlo Device Simulation. In Proceedings SISDEP 91 (pp. 251–256). http://hdl.handle.net/20.500.12708/68367 ( reposiTUm)

Wimmer, K., Bauer, R., Halama, S., Hobler, G., & Selberherr, S. (1991). Transformation Methods for Nonplanar Process Simulation. In Proceedings SISDEP 91 (pp. 131–138). http://hdl.handle.net/20.500.12708/68366 ( reposiTUm)

Verhas, P., & Selberherr, S. (1991). Automatic Device Characterization. In Proceedings SISDEP 91 (pp. 399–406). http://hdl.handle.net/20.500.12708/68368 ( reposiTUm)

Dickinger, P., Lindorfer, P., Nanz, G., & Selberherr, S. (1990). Connection of Network and Device Simulation. In NUPAD III Techn. Digest (pp. 73–74). http://hdl.handle.net/20.500.12708/68437 ( reposiTUm)

Heinreichsberger, O., Selberherr, S., Stiftinger, M., & Traar, K. (1990). On Preconditioning Non-Symmetric Matrix Iterations. In Abstracts Conference on Scientific Computation (pp. 34–37). http://hdl.handle.net/20.500.12708/68345 ( reposiTUm)

Stiftinger, M., Heinreichsberger, O., & Selberherr, S. (1990). A Comparison of Various Accelerators for the Iterative Solution of Large Nonsymmetric Systems. In Abstracts Conference on Scientific Computation (pp. 82–85). http://hdl.handle.net/20.500.12708/68346 ( reposiTUm)

Halama, S., Wimmer, K., Hobler, G., & Selberherr, S. (1990). Finite-Differenzen Dreiecksnetzgenerierung für die Prozess-Simulation mit PROMIS. In Proceedings NuTech (p. 3). http://hdl.handle.net/20.500.12708/68364 ( reposiTUm)

Hobler, G., Halama, S., Wimmer, K., Selberherr, S., & Pötzl, H. (1990). RTA-Simulations with the 2-D Process Simulator PROMIS. In NUPAD III Techn. Digest (pp. 13–14). http://hdl.handle.net/20.500.12708/68347 ( reposiTUm)

Wimmer, K., Bauer, R., Halama, S., Hobler, G., & Selberherr, S. (1990). Prozess-Simulation in nichtplanaren Strukturen mit PROMIS. In Proceedings NuTech (p. 4). http://hdl.handle.net/20.500.12708/68358 ( reposiTUm)

Selberherr, S., & Kosina, H. (1990). Simulation of Nanometer MOS-Devices with MINIMOS. In Proceedings 1990 VLSI Process/Device Modeling Workshop (pp. 2–5). http://hdl.handle.net/20.500.12708/68359 ( reposiTUm)

Heinreichsberger, O., Habas, P., Lindorfer, P., Mayer, G., Selberherr, S., & Stiftinger, M. (1989). Neuere Entwicklungen bei MINIMOS. In Proceedings NuTech 89 (p. 7). http://hdl.handle.net/20.500.12708/68350 ( reposiTUm)

Dickinger, P., Nanz, G., & Selberherr, S. (1989). Two-Dimensional Simulation of a Bipolar Dynamic Memory Cell. In Proceedings AMSE Conf. Modelling, Simulation and Control (pp. 33–38). http://hdl.handle.net/20.500.12708/68352 ( reposiTUm)

Nanz, G., Dickinger, P., Fischer, C., Kausel, W., & Selberherr, S. (1989). Bauelementsimulation mit BAMBI. In Proceedings NuTech 89 (p. 6). http://hdl.handle.net/20.500.12708/68351 ( reposiTUm)

Selberherr, S. (1989). Three Dimensional Device Modeling with MINIMOS 5. In Proceedings 1989 VLSI Process/Device Modeling Workshop (pp. 40–41). http://hdl.handle.net/20.500.12708/68339 ( reposiTUm)

Lindorfer, P., & Selberherr, S. (1989). GaAs MESFET simulation with MINIMOS. In 11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium. Gallium Arsenide Integrated Circuits Symposium (GaAs IC), San Diego, Austria. https://doi.org/10.1109/gaas.1989.69342 ( reposiTUm)

Selberherr, S., & Langer, E. (1989). Low Temperature MOS Device Modeling. In Proceedings Workshop On Low Temperature Semiconductor Electronics (pp. 68–72). http://hdl.handle.net/20.500.12708/68349 ( reposiTUm)

Hobler, G., & Selberherr, S. (1988). Monte Carlo Simulation of Ion Implantation into Two- and Three-Dimensional Structures. In Proceedings of the International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits. International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Honolulu, Austria. http://hdl.handle.net/20.500.12708/69842 ( reposiTUm)

Kausel, W., Nanz, G., Selberherr, S., & Pötzl, H. (1988). BAMBI - A Transient Two-Dimensional Device Simulator Using Implicit Backward Euler’s Method and a Totally Self Adaptive Grid. In Proceedings of the International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits. International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Honolulu, Austria. http://hdl.handle.net/20.500.12708/68449 ( reposiTUm)

Thurner, M., Lindorfer, P., & Selberherr, S. (1988). Numerical Treatment of Nonrectangular Field-Oxide for 3D MOSFET Simulation. In Proceedings SISDEP 88 (pp. 375–381). http://hdl.handle.net/20.500.12708/68343 ( reposiTUm)

Selberherr, S. (1988). MOS device modeling at liquid-nitrogen temperature. In Technical Digest., International Electron Devices Meeting. IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, Non-EU. https://doi.org/10.1109/iedm.1988.32863 ( reposiTUm)

Kausel, W., Nanz, G., Selberherr, S., & Pötzl, H. (1988). A New Boundary Condition for Device Simulation Considering Outer Components. In Proceedings SISDEP 88 (pp. 625–636). http://hdl.handle.net/20.500.12708/68342 ( reposiTUm)

Nanz, G., Dickinger, P., Kausel, W., & Selberherr, S. (1988). Avalanche Breakdown in the ALDMOST. In Proceedings SISDEP 88 (pp. 175–181). http://hdl.handle.net/20.500.12708/68341 ( reposiTUm)

Baghai-Wadji, A. R., Männer, O., Selberherr, S., & Seifert, F. (1987). Analysis and Measurement of Transducer End Radiation in SAW Filters on Strongly Coupling Substrates. In Proceedings of the 1er Forum Europeen Temps-Frequence (pp. 315–319). http://hdl.handle.net/20.500.12708/68446 ( reposiTUm)

Selberherr, S. (1987). Low Temperature MOS Device Modeling. In 172#^{nd} ECS Meeting (p. 464). http://hdl.handle.net/20.500.12708/68447 ( reposiTUm)

Selberherr, S. (1987). Low Temperature MOS Device Modeling. In 172#^{nd} ECS Meeting (pp. 70–86). http://hdl.handle.net/20.500.12708/68448 ( reposiTUm)

Hobler, G., & Selberherr, S. (1987). Efficient Two-Dimensional Monte-Carlo Simulation of Ion Implantation. In Proceedings Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits (pp. 225–230). http://hdl.handle.net/20.500.12708/68435 ( reposiTUm)

Thurner, M., & Selberherr, S. (1987). The Extension of MINIMOS to a Three Dimensional Simulation Program. In Proceedings Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits (pp. 327–332). http://hdl.handle.net/20.500.12708/68434 ( reposiTUm)

Markowich, P. A., Schmeiser, C., & Selberherr, S. (1987). Numerical Methods in Semiconductor Device Simulation. In Numerical Methods and Approximation Theory (pp. 287–299). http://hdl.handle.net/20.500.12708/68436 ( reposiTUm)

Baghai-Wadji, A. R., Selberherr, S., & Seifert, F. (1986). Rigorous 3D Electrostatic Field Analysis of SAW Transducers with Closed-Form Formulae. In Proceedings of the Ultrasonics Symposium (pp. 23–28). http://hdl.handle.net/20.500.12708/68433 ( reposiTUm)

Selberherr, S. (1986). The Status of MINIMOS. In Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes (pp. 2–15). http://hdl.handle.net/20.500.12708/68444 ( reposiTUm)

Budil, M., Jüngling, W., Guerrero, E., Selberherr, S., & Pötzl, H. (1986). Modeling of Point Defect Kinetics During Thermal Oxidation. In Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes (pp. 384–397). http://hdl.handle.net/20.500.12708/68443 ( reposiTUm)

Hobler, G., Langer, E., & Selberherr, S. (1986). Two-Dimensional Modeling of Ion-Implantation. In Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes (pp. 256–270). http://hdl.handle.net/20.500.12708/68442 ( reposiTUm)

Hobler, G., Guerrero, E., & Selberherr, S. (1986). Two-Dimensional Modeling of Ion Implantation Induced Point Defects. In Proceedings of the International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (pp. 10–11). http://hdl.handle.net/20.500.12708/68445 ( reposiTUm)

Baghai-Wadji, A. R., Selberherr, S., & Seifert, F. (1984). On the Calculation of Charge, Electrostatic Potential and Capacitance in Generalized SAW Structures. In Abstracts of the Ultrasonics Symposium (pp. 44–48). http://hdl.handle.net/20.500.12708/68432 ( reposiTUm)

Selberherr, S. (1984). Process and Device Modeling for VLSI. In Proceedings of the Yugoslav International Conference on Microelectronics (MIEL) (pp. 1–45). http://hdl.handle.net/20.500.12708/68431 ( reposiTUm)

Selberherr, S., Griebel, W., & Pötzl, H. (1984). Transport Physics for Modeling Semiconductor Devices. In Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes (pp. 133–152). http://hdl.handle.net/20.500.12708/68440 ( reposiTUm)

Straker, F., & Selberherr, S. (1984). Capacitance Computation for VLSI Structures. In Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes (pp. 39–55). http://hdl.handle.net/20.500.12708/68441 ( reposiTUm)

Langer, E., Selberherr, S., & Markowich, P. A. (1983). Surface and Bulk Wave Velocities in Arbitrary Anisotropic Piezoelectric Materials. In Proceedings of the Ultrasonics Symposium (pp. 1157–1160). http://hdl.handle.net/20.500.12708/68430 ( reposiTUm)

Selberherr, S. (1983). Modeling static and dynamic behavior of power devices. In 1983 International Electron Devices Meeting. IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, Non-EU. https://doi.org/10.1109/iedm.1983.190443 ( reposiTUm)

Agler, W., Markowich, P. A., & Selberherr, S. (1983). A Singular Perturbation Analysis of Discretisation Methods for the Parabolic Semiconductor Device Equations. In Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits (pp. 85–90). http://hdl.handle.net/20.500.12708/68438 ( reposiTUm)

Langer, E., Selberherr, S., Ringhofer, Ch., & Markowich, P. A. (1982). Numerical Analysis of Acoustic Wave Generation in Anisotropic Piezoelectric Materials. In Proceedings of the Ultrasonics Symposium (pp. 350–353). http://hdl.handle.net/20.500.12708/68429 ( reposiTUm)

Beiträge in Büchern

Selberherr, S., & Sverdlov, V. (2023). Technology Computer-Aided Design: A Key Component of Microelectronics’ Development. In A. Nathan, S. K. Saha, & R. M. Todi (Eds.), 75th Anniversary of the Transistor (pp. 337–347). Wiley. https://doi.org/10.1002/9781394202478.ch28 ( reposiTUm)

Cervenka, J., Kosik, R., Vasicek, M.-T., Gritsch, M., Selberherr, S., & Grasser, T. (2023). Macroscopic Transport Models for Classical Device Simulation. In M. Rudan, R. Brunetti, & S. Reggiani (Eds.), Springer Handbook of Semiconductor Devices (pp. 1335–1381). Springer. https://doi.org/10.1007/978-3-030-79827-7_37 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2022). Spin-Based Devices for Digital Applications. In M. Rudan, R. Brunetti, & S. Reggiani (Eds.), Springer Handbook of Semiconductor Devices (pp. 1123–1166). Springer International Publishing. https://doi.org/10.1007/978-3-030-79827-7_31 ( reposiTUm)

Benam, M., Wołoszyn, M., & Selberherr, S. (2021). Self-consistent Monte Carlo Solution of Wigner and Poisson Equations Using an Efficient Multigrid Approach. In I. Georgiev, H. Kostadinov, & E. Lilkova (Eds.), Advanced Computing in Industrial Mathematics (pp. 60–67). Springer. https://doi.org/10.1007/978-3-030-71616-5_7 ( reposiTUm)

Ceric, H., Zahedmanesh, H., Lacerda de Orio, R., & Selberherr, S. (2021). Models and Techniques for Reliability Studies of Nano-Scaled Interconnects. In S. Y. Yurish (Ed.), Advances in Measurements and Instrumentation: Reviews (pp. 93–111). International Frequency Sensor Association (IFSA) Publishing. http://hdl.handle.net/20.500.12708/30561 ( reposiTUm)

Filipovic, L., & Selberherr, S. (2021). Electro-Thermo-Mechanical Simulation of Semiconductor Metal Oxide Gas Sensors. In M. I. Khan (Ed.), Prime Archives in Material Science (pp. 1–38). Vide Leaf. http://hdl.handle.net/20.500.12708/30562 ( reposiTUm)

Coppeta, R., Lahlalia, A., Kozic, D., Hammer, R., Riedler, J., Toschkoff, G., Singulani, A., Ali, Z., Sagmeister, M., Carniello, S., Selberherr, S., & Filipovic, L. (2020). Electro-Thermal-Mechanical Modeling of Gas Sensor Hotplates. In W. D. van Driel, O. Pyper, & C. Schumann (Eds.), Sensor Systems Simulations (pp. 17–72). Springer International Publishing. https://doi.org/10.1007/978-3-030-16577-2_2 ( reposiTUm)

Quell, M., Diamantopoulos, G., Hössinger, A., Selberherr, S., & Weinbub, J. (2020). Parallel Correction for Hierarchical Re-Distancing Using the Fast Marching Method. In I. Dimov & S. Fidanova (Eds.), Advances in High Performance Computing (pp. 438–451). Springer International Publishing. https://doi.org/10.1007/978-3-030-55347-0_37 ( reposiTUm)

Fiorentini, S., Lacerda de Orio, R., Selberherr, S., Ender, J., Goes, W., & Sverdlov, V. (2020). Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM. In J. A. Martino, B.-Y. Nguyen, F. Gamiz, H. Ishii, J.-P. Raskin, S. Selberherr, & E. Simoen (Eds.), ECS Transactions (pp. 159–164). ECS Transactions. https://doi.org/10.1149/09705.0159ecst ( reposiTUm)

Quell, M., Manstetten, P., Hössinger, A., Selberherr, S., & Weinbub, J. (2020). Parallelized Construction of Extension Velocities for the Level-Set Method. In R. Wyrzykowski, E. Deelman, J. Dongarra, & K. Karczewski (Eds.), Parallel Processing and Applied Mathematics (pp. 348–358). Springer International Publishing. https://doi.org/10.1007/978-3-030-43229-4_30 ( reposiTUm)

Gnam, L., Manstetten, P., Hössinger, A., Selberherr, S., & Weinbub, J. (2019). Accelerating Flux Calculations Using Sparse Sampling. In L. Filipovic & T. Grasser (Eds.), Miniaturized Transistors (pp. 176–192). MDPI. https://doi.org/10.3390/mi9110550 ( reposiTUm)

Gnam, L., Selberherr, S., & Weinbub, J. (2019). Evaluation of Serial and Parallel Shared-Memory Distance-1 Graph Coloring Algorithms. In G. Nikolov, N. T. Kolkovska, & K. Georgiev (Eds.), Numerical Methods and Applications (pp. 106–114). Springer International Publishing. https://doi.org/10.1007/978-3-030-10692-8_12 ( reposiTUm)

Benam, M., Nedjalkov, M., & Selberherr, S. (2019). A Wigner Potential Decomposition in the Signed-Particle Monte Carlo Approach. In G. Nikolov, N. T. Kolkovska, & K. Georgiev (Eds.), Numerical Methods and Applications (pp. 263–272). Springer International Publishing. https://doi.org/10.1007/978-3-030-10692-8_29 ( reposiTUm)

Windbacher, T., Makarov, A., Selberherr, S., Mahmoudi, H., Malm, B. G., Ekström, M., & Östling, M. (2019). The Exploitation of the Spin-Transfer Torque Effect for CMOS Compatible Beyond Von Neumann Computing. In S. K. Kurinec, S. Walia, & K. Iniewski (Eds.), Energy Efficient Computing & Electronics: Devices to Systems; Devices, Circuits, and Systems Series (pp. 93–155). CRC Press. http://hdl.handle.net/20.500.12708/30016 ( reposiTUm)

Ruscher, S. H., Weinbub, J., & Selberherr, S. (2018). Evaluating Software Testing Methods in an Active and Assisted Living Context. In F. Piazolo & S. Schlögl (Eds.), Innovative Lösungen für eine alternde Gesellschaft (pp. 68–76). Pabst Science Publishers. http://hdl.handle.net/20.500.12708/29528 ( reposiTUm)

Lorenz, J., Asenov, A., Baer, E., Barraud, S., Millar, C., & Nedjalkov, M. (2018). Process Variability for Devices at and Beyond the 7nm Node. In J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen, & A. Yoshino (Eds.), Advanced CMOS-Compatible Semiconductor Devices 18 (pp. 113–124). ECS Transactions. http://hdl.handle.net/20.500.12708/29732 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2018). Ultra-Fast Switching of a Free Magnetic Layer with Out-of-Plane Magnetization in Spin-Orbit Torque MRAM Cells. In J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen, & A. Yoshino (Eds.), ECS Transactions (pp. 213–218). ECS Transactions. https://doi.org/10.1149/08508.0213ecst ( reposiTUm)

Manstetten, P., Gnam, L., Hössinger, A., Selberherr, S., & Weinbub, J. (2018). Sparse Surface Speed Evaluation on a Dynamic Three-Dimensional Surface Using an Iterative Partitioning Scheme. In Y. Shi, H. Fu, Y. Tian, V. V. Krzhizhanovskaya, M. H. Lees, J. Dongarra, & P. M. A. Sloot (Eds.), Computational Science – ICCS 2018 (pp. 694–707). Springer International Publishing. https://doi.org/10.1007/978-3-319-93698-7_53 ( reposiTUm)

Filipovic, L., & Lahlalia, A. (2018). (Invited)<i />System-on-Chip Sensor Integration in Advanced CMOS Technology. In J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen, & A. Yoshino (Eds.), ECS Transactions (pp. 151–162). ECS Transactions. https://doi.org/10.1149/08508.0151ecst ( reposiTUm)

Dimov, I., Nedjalkov, M., Sellier, J. M., & Selberherr, S. (2016). Neumann Series Analysis of the Wigner Equation Solution. In G. Russo, V. Capasso, G. Nicosia, & V. Romano (Eds.), Mathematics in Industry (pp. 701–707). Springer International Publishing. https://doi.org/10.1007/978-3-319-23413-7_97 ( reposiTUm)

Windbacher, T., Makarov, A., Sverdlov, V., & Selberherr, S. (2016). A Universal Nonvolatile Processing Environment. In S. Luryi, J. Xu, & A. Zaslavsky (Eds.), Future Trends in Microelectronics - Journey into the Unknown (pp. 83–91). John Wiley & Sons. http://hdl.handle.net/20.500.12708/29174 ( reposiTUm)

Gutierrez-D, E. A., Gamiz, F., Sverdlov, V., Selberherr, S., & Torres-J, A. (2016). Device physics, modeling, and technology for nano-scaled semiconductor devices. In E. A. Gutierrez-Dominguez (Ed.), Nano-Scaled Semiconductor Devices: Physics, Modelling, Characterisation, and Societal Impact (pp. 17–185). Institution of Engineering and Technology. https://doi.org/10.1049/pbcs027e_ch2 ( reposiTUm)

Sverdlov, V., Osintsev, D., & Selberherr, S. (2016). Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation. In J. J. Liou, S.-K. Liaw, & Y.-H. Chung (Eds.), Nano Devices and Sensors (pp. 29–48). De Gruyter. https://doi.org/10.1515/9781501501531-003 ( reposiTUm)

Osintsev, D., Sverdlov, V., & Selberherr, S. (2016). Electron Momentum and Spin Relaxation in Silicon Films. In G. Russo, V. Capasso, G. Nicosia, & V. Romano (Eds.), Mathematics in Industry (pp. 695–700). Springer International Publishing. https://doi.org/10.1007/978-3-319-23413-7_96 ( reposiTUm)

Grasser, T., Langer, E., & Selberherr, S. (2015). INSTITUT FÜR MIKROELEKTRONIK / INSTITUTE FOR MICROELECTRONICS. In K. Unterrainer (Ed.), Die Fakultät für Elektrotechnik und Informationstechnik / The Faculty of Electrical Engineering and Information Technology (Vol. 4, pp. 57–62). Böhlau. https://doi.org/10.7767/9783205202240-006 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2015). Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer. In S. Cristoloveanu & M. Shur (Eds.), Frontiers in Electronics. World Scientific Publishing Co. https://doi.org/10.1142/9789814656917_0001 ( reposiTUm)

Mahmoudi, H., Windbacher, T., Sverdlov, V., & Selberherr, S. (2015). Stateful STT-MRAM-Based Logic for Beyond–Von Neumann Computing. In T. Brozek & K. Iniewski (Eds.), Micro- and Nanoelectronics: Emerging Device Challenges and Solutions (pp. 221–250). CRC Press. https://doi.org/10.1201/b17597-11 ( reposiTUm)

Filipovic, L., & Selberherr, S. (2015). Stress Considerations in Thin Films for CMOS-Integrated Gas Sensors. In Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, & B.-Y. Nguyen (Eds.), ECS Transactions (pp. 243–250). ECS Transactions. https://doi.org/10.1149/06605.0243ecst ( reposiTUm)

Windbacher, T., Makarov, A., Sverdlov, V., & Selberherr, S. (2015). Novel Buffered Magnetic Logic Gate Grid. In F. Roozeboom, V. Narayanan, K. Kakushima, P. J. Timans, E. P. Gusev, Z. Karim, & S. DeGendt (Eds.), ECS Transactions (pp. 295–303). ECS Transactions. https://doi.org/10.1149/06604.0295ecst ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2015). (Invited) Spin-Based Silicon and CMOS-Compatible Devices. In Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, & B.-Y. Nguyen (Eds.), ECS Transactions (pp. 223–231). ECS Transactions. https://doi.org/10.1149/06605.0223ecst ( reposiTUm)

Ellinghaus, P., Nedjalkov, M., & Selberherr, S. (2015). Optimized Particle Regeneration Scheme for the Wigner Monte Carlo Method. In I. Dimov, S. Fidanova, & I. Lirkov (Eds.), Numerical Methods and Applications (pp. 27–33). Springer International Publishing. https://doi.org/10.1007/978-3-319-15585-2_3 ( reposiTUm)

Ghosh, J., Osintsev, D., Sverdlov, V., & Selberherr, S. (2015). Variation of Spin Lifetime with Spin Injection Orientation in Strained Thin Silicon Films. In Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, & B.-Y. Nguyen (Eds.), ECS Transactions (pp. 233–240). ECS Transactions. https://doi.org/10.1149/06605.0233ecst ( reposiTUm)

Filipovic, L., Selberherr, S., Mutinati, G. C., Brunet, E., Steinhauer, S., Köck, A., Teva, J., Kraft, J., Siegert, J., Schrank, F., Gspan, C., & Grogger, W. (2014). Modeling and Analysis of Spray Pyrolysis Deposited SnO2 Films for Gas Sensors. In G.-C. Yang, S.-L. Ao, & L. Gelman (Eds.), Transactions on Engineering Technologies (pp. 295–310). Springer. https://doi.org/10.1007/978-94-017-8832-8_22 ( reposiTUm)

Sverdlov, V., Ghosh, J., Osintsev, D., & Selberherr, S. (2014). Modeling Silicon Spintronics. In Y. B. Senichenkov, V. Korablev, I. Chernorytski, N. Korovkin, S. Pozdnjkov, & K. Ntalianis (Eds.), Recent Advances in Mathematical Methods in Applied Sciences (pp. 195–198). Mathematics and Computers in Science and Engineering Series | 32. http://hdl.handle.net/20.500.12708/28370 ( reposiTUm)

Osintsev, D., Sverdlov, V., & Selberherr, S. (2014). Uniaxial Shear Strain as a Mechanism to Increase Spin Lifetime in Thin Film of a SOI-Based Silicon Spin FETs. In A. Nazarov, F. Balestra, V. Kilchytska, & D. Flandre (Eds.), Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting (pp. 127–149). Springer International Publishing. https://doi.org/10.1007/978-3-319-08804-4_7 ( reposiTUm)

Rodríguez, J., Weinbub, J., Pahr, D., Rupp, K., & Selberherr, S. (2013). Distributed High-Performance Parallel Mesh Generation with ViennaMesh. In P. Manninen & P. Öster (Eds.), Applied Parallel and Scientific Computing (pp. 548–552). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-642-36803-5_44 ( reposiTUm)

Weinbub, J., Rupp, K., & Selberherr, S. (2013). A Lightweight Task Graph Scheduler for Distributed High-Performance Scientific Computing. In P. Manninen & P. Öster (Eds.), Applied Parallel and Scientific Computing (pp. 563–566). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-642-36803-5_47 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2013). Magnetic Tunnel Junctions with a Composite Free Layer: A New Concept for Future Universal Memory. In S. Luryi, J. Xu, & A. Zaslavsky (Eds.), Future Trends in Microelectronics - Frontiers and Innovations (pp. 93–101). John Wiley & Sons. http://hdl.handle.net/20.500.12708/27934 ( reposiTUm)

Weinbub, J., Rupp, K., & Selberherr, S. (2013). A Flexible Dynamic Data Structure for Scientific Computing. In G.-C. Yang, S.-L. Ao, & L. Gelman (Eds.), IAENG Transactions on Engineering Technologies (pp. 565–577). Springer. https://doi.org/10.1007/978-94-007-6190-2_43 ( reposiTUm)

Osintsev, D., Sverdlov, V., & Selberherr, S. (2013). Spin Lifetime Enhancement by Shear Strain in Thin Silicon-On-Insulator Films. In Y. Omura, F. Gamiz, B.-Y. Nguyen, H. Ishii, J. A. Martino, S. Selberherr, & J.-P. Raskin (Eds.), ECS Transactions (pp. 203–208). ECS Transactions. https://doi.org/10.1149/05305.0203ecst ( reposiTUm)

Filipovic, L., & Selberherr, S. (2012). Chapter 11. A Two-Dimensional Lorentzian Distribution for an Atomic Force Microscopy Simulator. In K. K. Sabelfeld & I. Dimov (Eds.), Monte Carlo Methods and Applications (pp. 97–104). De Gruyter. https://doi.org/10.1515/9783110293586.97 ( reposiTUm)

Schwaha, P., Nedjalkov, M., Selberherr, S., & Dimov, I. (2012). Monte Carlo Investigations of Electron Decoherence due to Phonons. In K. K. Sabelfeld & I. Dimov (Eds.), Monte Carlo Methods and Applications (pp. 203–211). De Gruyter. http://hdl.handle.net/20.500.12708/27717 ( reposiTUm)

Kysenko, V., Rupp, K., Marchenko, O., Selberherr, S., & Anisimov, A. (2012). GPU-Accelerated Non-negative Matrix Factorization for Text Mining. In G. Bouma, A. Ittoo, E. Metais, & H. Wortmann (Eds.), Natural Language Processing and Information Systems (pp. 158–163). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-642-31178-9_15 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2011). Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations. In I. Dimov, S. Dimova, & N. T. Kolkovska (Eds.), Numerical Methods and Applications (pp. 87–94). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-642-18466-6_9 ( reposiTUm)

Nedjalkov, M., Selberherr, S., & Dimov, I. (2011). Stochastic Algorithm for Solving the Wigner-Boltzmann Correction Equation. In I. Dimov, S. Dimova, & N. T. Kolkovska (Eds.), Numerical Methods and Applications (pp. 95–102). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-642-18466-6_10 ( reposiTUm)

Windbacher, T., Sverdlov, V., & Selberherr, S. (2011). Classical Device Modeling. In D. Vasileska & S. M. Goodnick (Eds.), Nano-Electronic Devices (pp. 1–96). Springer New York. https://doi.org/10.1007/978-1-4419-8840-9_1 ( reposiTUm)

Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Weinbub, J., & Selberherr, S. (2011). Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors. In Y. Omura, H. Ishii, B.-Y. Nguyen, S. Selberherr, F. Gamiz, J. A. Martino, & J.-P. Raskin (Eds.), ECS Transactions (pp. 277–282). ECS Transactions. https://doi.org/10.1149/1.3570806 ( reposiTUm)

Windbacher, T., Sverdlov, V., & Selberherr, S. (2010). Biotin-Streptavidin Sensitive BioFETs and Their Properties. In A. Fred, J. Filipe, & H. Gamboa (Eds.), Biomedical Engineering Systems and Technologies (pp. 85–95). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-642-11721-3_6 ( reposiTUm)

Sverdlov, V., Baumgartner, O., Windbacher, T., & Selberherr, S. (2010). Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting. In S. Luryi, J. Xu, & A. Zaslavsky (Eds.), Future Trends in Microelectronics (pp. 281–291). John Wiley & Sons. http://hdl.handle.net/20.500.12708/27028 ( reposiTUm)

Heinzl, R., Schwaha, P., Stimpfl, F., & Selberherr, S. (2009). Concepts for High-Perfomance Scientific Computing. In J. Filipe, B. Shishkov, M. Helfert, & L. A. Maciaszek (Eds.), Software and Data Technologies (pp. 89–100). Springer. https://doi.org/10.1007/978-3-540-88655-6_7 ( reposiTUm)

Riedling, K., & Selberherr, S. (2007). A Publication Database for Research Documentation and Performance Evaluation. In Innovations 2007 (pp. 365–380). International Network for Engineering Education and Research (iNEER). http://hdl.handle.net/20.500.12708/25047 ( reposiTUm)

Spevak, M., Heinzl, R., Schwaha, P., & Selberherr, S. (2007). A Computational Framework for Topological Operations. In B. Kaagström, E. Elmroth, J. Jackson, & J. Wasniewski (Eds.), Applied Parallel Computing. State of the Art in Scientific Computing (pp. 781–790). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-540-75755-9_95 ( reposiTUm)

Heinzl, R., Spevak, M., Schwaha, P., & Selberherr, S. (2007). A High Performance Generic Scientific Simulation Environment. In B. Kaagström, E. Elmroth, J. Dongarra, & J. Wasniewski (Eds.), Applied Parallel Computing. State of the Art in Scientific Computing (pp. 996–1005). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-540-75755-9_117 ( reposiTUm)

Karner, M., Holzer, S., Gös, W., Vasicek, M., Wagner, M., Kosina, H., & Selberherr, S. (2006). Numerical Analysis of Gate Stacks. In S. Kar, S. De Gendt, M. Houssa, H. Iwai, D. Landheer, & D. Misra (Eds.), ECS Transactions (pp. 299–308). ECS Transactions. https://doi.org/10.1149/1.2355721 ( reposiTUm)

Karner, M., Gehring, A., Holzer, S., Kosina, H., & Selberherr, S. (2006). Efficient Calculation of Lifetime Based Direct Tunneling Through Stacked Dielectrics. In S. Kar, S. De Gendt, M. Houssa, D. Landheer, D. Misra, & W. Tsai (Eds.), ECS Transactions (pp. 693–703). ECS Transactions. https://doi.org/10.1149/1.2209316 ( reposiTUm)

Ungersboeck, E., Sverdlov, V., Kosina, H., & Selberherr, S. (2006). Modeling of Advanced Semiconductor Devices. In J. A. Diniz, P. French, N. Morimoto, J. W. Swart, & D. De Lima Monteiro (Eds.), ECS Transactions (pp. 207–216). ECS Transactions. https://doi.org/10.1149/1.2813493 ( reposiTUm)

Wittmann, R., Uppal, S., Hoessinger, A., Cervenka, J., & Selberherr, S. (2006). A Study of Boron Implantation into High Ge Content SiGe Alloys. In D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, & S. Zaima (Eds.), ECS Transactions (pp. 667–676). ECS Transactions. https://doi.org/10.1149/1.2355862 ( reposiTUm)

Kosina, H., & Selberherr, S. (2006). Device Simulation Demands of Upcoming Microelectronics Devices. In H. Iwai, Y. Nishida, M. Shur, & H. Wong (Eds.), International Journal of High Speed Electronics and Systems (pp. 115–136). World Scientific Publishing Co. https://doi.org/10.1142/s0129156406003576 ( reposiTUm)

Karlowatz, G., Ungersböck, S. E., Wessner, W., Kosina, H., & Selberherr, S. (2006). Analysis of Hole Transport in Arbitrarily Strained Germanium. In D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, & S. Zaima (Eds.), ECS Transactions (pp. 443–450). ECS Transactions. https://doi.org/10.1149/1.2355842 ( reposiTUm)

Ungersboeck, E., Sverdlov, V., Kosina, H., & Selberherr, S. (2006). Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations. In D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, & S. Zaima (Eds.), ECS Transactions (pp. 45–54). ECS Transactions. https://doi.org/10.1149/1.2355793 ( reposiTUm)

Ceric, H., Heinzl, R., Hollauer, C., Grasser, T., & Selberherr, S. (2006). Microstructure and Stress Aspects of Electromigration Modeling. In Stress-Induced Phenomena in Metallization (pp. 262–268). American Institute of Physics. http://hdl.handle.net/20.500.12708/25011 ( reposiTUm)

Gehring, A., & Selberherr, S. (2006). Tunneling Models for Semiconductor Device Simulation. In Handbook of Theoretical and Computational Nanotechnology (pp. 469–543). American Scientific Publishers. http://hdl.handle.net/20.500.12708/25045 ( reposiTUm)

Hollauer, C., Ceric, H., & Selberherr, S. (2005). Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress. In ECS Meeting Abstracts (pp. 734–734). ECS Transactions. https://doi.org/10.1149/ma2005-02/19/734 ( reposiTUm)

Sverdlov, V., Kinkhabwala, Y., Kaplan, D., Korotkov, A. N., Kosina, H., & Selberherr, S. (2005). Shot Noise Suppression and Enhancement at 2D Hopping and in Single-Electron Arrays. In Unsolved Problems of Noise and Fluctuations (pp. 177–182). American Institute of Physics. http://hdl.handle.net/20.500.12708/25001 ( reposiTUm)

Wittmann, R., Hössinger, A., & Selberherr, S. (2004). Calibration for the Monte Carlo Simulation of Ion Implantation in Relaxed SiGe. In SiGe: Materials, Processing, and Devices (pp. 181–192). ECS Transactions. http://hdl.handle.net/20.500.12708/25031 ( reposiTUm)

Kosina, H., Wimmer, K., Fischer, C., & Selberherr, S. (1991). Simulation of ULSI Processes and Devices. In M. Doyama (Ed.), Computer Aided Innovation of New Materials (pp. 723–728). North Holland Publishing Company. http://hdl.handle.net/20.500.12708/24970 ( reposiTUm)

Selberherr, S. (1986). On Modeling MOS-Devices. In W. L. Engl (Ed.), Process and Device Modeling (pp. 265–299). North Holland Publishing Company. http://hdl.handle.net/20.500.12708/24968 ( reposiTUm)

Selberherr, S., Schütz, A., & Pötzl, H. (1983). Two-Dimensional MOS-Transistor Modeling. In P. Antognetti, D. Antoniadis, R. W. Dutton, & W. G. Oldham (Eds.), Process and Device Simulation for MOS-VLSI Circuits (pp. 490–581). Martinus Nijhoff. http://hdl.handle.net/20.500.12708/24969 ( reposiTUm)

Bücher

Stochastic Approaches to Electron Transport in Micro- and Nanostructures. (2021). In M. Nedjalkov, I. Dimov, & S. Selberherr (Eds.), Modeling and Simulation in Science, Engineering and Technology. Birkhäuser Basel. https://doi.org/10.1007/978-3-030-67917-0 ( reposiTUm)

Martino, J. A., Nguyen, B.-Y., Gamiz, F., Ishii, H., Raskin, J.-P., Selberherr, S., & Simoen, E. (Eds.). (2020). Advanced CMOS-Compatible Semiconductor Devices 19. ECS Transactions, The Electrochemical Society, Vol.97, No.5. http://hdl.handle.net/20.500.12708/24717 ( reposiTUm)

Weinbub, J., Jonker, B., Riechert, H., Machida, T., Goodnick, S. M., & Selberherr, S. (Eds.). (2018). Innovative Nanoscale Devices and Systems. Society for Micro- and Nanoelectronics. http://hdl.handle.net/20.500.12708/24515 ( reposiTUm)

Martino, J. A., Raskin, J.-P., Selberherr, S., Ishii, H., Gamiz, F., Nguyen, B.-Y., & Yoshino, A. (Eds.). (2018). Advanced CMOS-Compatible Semiconductor Devices 18. ECS Transactions, The Electrochemical Society, Vol.85, No.5. http://hdl.handle.net/20.500.12708/24425 ( reposiTUm)

Matsumoto, K., Jonker, B., Weinbub, J., Machida, T., Selberherr, S., & Goodnick, S. M. (Eds.). (2017). Innovative Nanoscale Devices and Systems. Society for Micro- and Nanoelectronics. http://hdl.handle.net/20.500.12708/24352 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (Eds.). (2017). Special Issue: Extended Papers Selected from EUROSOI-ULIS 2016. Solid-State Electronics, Elsevier. http://hdl.handle.net/20.500.12708/24231 ( reposiTUm)

Jonker, B., Porod, W., Sverdlov, V., Matsumoto, K., Selberherr, S., & Goodnick, S. M. (Eds.). (2016). Innovative Nanoscale Devices and Systems. Society for Micro- and Nanoelectronics. http://hdl.handle.net/20.500.12708/24211 ( reposiTUm)

Omura, Y., Martino, J. A., Raskin, J.-P., Selberherr, S., Ishii, H., Gamiz, F., & Nguyen, B.-Y. (Eds.). (2015). Advanced CMOS-Compatible Semiconductor Devices 17. ECS Transactions, The Electrochemical Society, Vol.66, No.5. http://hdl.handle.net/20.500.12708/23973 ( reposiTUm)

Sverdlov, V., Jonker, B., Ishibashi, K., Goodnick, S. M., & Selberherr, S. (Eds.). (2014). Innovative Nanoscale Devices and Systems. Society for Micro- and Nanoelectronics. http://hdl.handle.net/20.500.12708/23884 ( reposiTUm)

Omura, Y., Gamiz, F., Nguyen, B.-Y., Ishii, H., Martino, J. A., Selberherr, S., & Raskin, J.-P. (Eds.). (2013). Advanced Semiconductor-on-Insulator Technology and Related Physics 16. ECS Transactions, The Electrochemical Society, Vol.53, No.5. http://hdl.handle.net/20.500.12708/23669 ( reposiTUm)

Ishibashi, K., Goodnick, S. M., Selberherr, S., & Fujiwara, A. (Eds.). (2012). Innovative Nanoscale Devices and Systems. Society for Micro- and Nanoelectronics. http://hdl.handle.net/20.500.12708/23587 ( reposiTUm)

Omura, Y., Gamiz, F., Ishii, H., Martino, J. A., Nguyen, B.-Y., Raskin, J.-P., & Selberherr, S. (Eds.). (2011). Advanced Semiconductor-on-Insulator Technology and Related Physics 15. ECS Transactions, The Electrochemical Society, Vol.35, No.5. http://hdl.handle.net/20.500.12708/23307 ( reposiTUm)

Klima, R., & Selberherr, S. (2010). Programmieren in C. Springer-Verlag, Wien - New York. https://doi.org/10.1007/978-3-7091-0393-7 ( reposiTUm)

Swart, J. W., Selberherr, S., Susin, A. A., Diniz, J. A., & Morimoto, N. (Eds.). (2008). Microelectronics Technology and Devices - SBMICRO 2008. ECS Transactions, The Electrochemical Society, Vol.14, No.1. http://hdl.handle.net/20.500.12708/22765 ( reposiTUm)

Klima, R., & Selberherr, S. (2007). Programmieren in C, 2. Auflage. Springer-Verlag, Wien - New York. http://hdl.handle.net/20.500.12708/22121 ( reposiTUm)

Grasser, T., & Selberherr, S. (Eds.). (2007). Simulation of Semiconductor Processes and Devices 2007. Springer-Verlag, Wien - New York. https://doi.org/10.1007/978-3-211-72861-1 ( reposiTUm)

Selberherr, S., Stippel, H., & Strasser, R. (Eds.). (1993). Simulation of Semiconductor Devices and Processes. Springer-Verlag, Wien - New York. https://doi.org/10.1007/978-3-7091-6657-4 ( reposiTUm)

Fasching, F., Halama, S., & Selberherr, S. (Eds.). (1993). Technology CAD Systems. Springer-Verlag, Wien - New York. https://doi.org/10.1007/978-3-7091-9315-0 ( reposiTUm)

Selberherr, S. (1984). Analysis and Simulation of Semiconductor Devices. Springer-Verlag, Wien - New York. https://doi.org/10.1007/978-3-7091-8752-4 ( reposiTUm)

Selberherr, S. (Ed.). (1981). Two Dimensional Modeling of MOS Transistors. Semiconductor Physics, Inc. http://hdl.handle.net/20.500.12708/22094 ( reposiTUm)

Tagungsbände

Jagannathan, H., Martino, J., Karim, Z., Kakushima, K., Timans, P. J., Gousev, E., De Gendt, S., Misra, D., Obeng, Y., Roozeboom, F., Nguyen, B., Raskin, J., Gamiz, F., Selberherr, S., Simoen, E., & Ishii, H. (Eds.). (2023). Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 13 & Advanced CMOS-Compatible Semiconductor Devices 20 (Vol. 111). ECS The Electrochemical Society. ( reposiTUm)

Weinbub, J., Ferry, D. K., Knezevic, I., Nedjalkov, M., & Selberherr, S. (Eds.). (2017). Book of Abstracts of the 2nd International Wigner Workshop. Institute for Microelectronics, TU Wien. http://hdl.handle.net/20.500.12708/24303 ( reposiTUm)

Sverdlov, V., Gamiz, F., Cristoloveanu, S., & Selberherr, S. (Eds.). (2016). 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS Book of Abstracts. Society for Micro- and Nanoelectronics. http://hdl.handle.net/20.500.12708/24123 ( reposiTUm)

Sverdlov, V., Cristoloveanu, S., Gamiz, F., & Selberherr, S. (Eds.). (2016). 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS. IEEE. http://hdl.handle.net/20.500.12708/24200 ( reposiTUm)

Mori, N., & Selberherr, S. (Eds.). (2013). 16th International Workshop on Computational Electronics Book of Abstracts. Society for Micro- and Nanoelectronics. http://hdl.handle.net/20.500.12708/23673 ( reposiTUm)

Kosina, H., & Selberherr, S. (Eds.). (2006). 11th International Workshop on Computational Electronics Book of Abstracts. Technische Universität Wien, Institut für Mikroelektronik. http://hdl.handle.net/20.500.12708/22107 ( reposiTUm)

Präsentationen

Bendra, M., Lacerda de Orio, R., Selberherr, S., Wolfgang Goes, & Sverdlov, V. (2024, May 25). Influence of Interface Exchange Coupling in Multilayered Spintronic Structures [Conference Presentation]. 47th MIPRO ICT and Electronics Convention (MIPRO 2024), Opatija, Croatia. http://hdl.handle.net/20.500.12708/207487 ( reposiTUm)

Fiorentini, S., Lacerda de Orio, R., Ender, J., Selberherr, S., Bendra, M., Jorstad, N. P., Gös, W., & Sverdlov, V. (2023, January 21). Finite Element Method for MRAM Switching Simulations [Keynote Presentation]. International Conference on Mathematical Models, Computational Techniques in Science, and Engineering (MMCTSE), Athens, Greece. ( reposiTUm)

Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Jørstad, N. P., Pruckner, B., Selberherr, S., Wolfgang Goes, & Sverdlov, V. (2023, May 25). Back-Hopping in Ultra-Scaled MRAM Cells [Conference Presentation]. 46th MIPRO ICT and Electronics Convention (MIPRO), Opatija, Croatia. http://hdl.handle.net/20.500.12708/207485 ( reposiTUm)

Fiorentini, S., Bendra, M., Ender, J., Orio, R., Selberherr, S., Goes, W., & Sverdlov, V. (2021). Design Support for Ultra-Scaled MRAM Cells. In Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM. 2021 IEEE International Electron Devices Meeting (IEDM), San Francisco, United States of America (the). http://hdl.handle.net/20.500.12708/77685 ( reposiTUm)

Selberherr, S. (2017). The Evolution and Potential Future of Microelectronics. IEEE EDS Distinguished Lecture, Campinas, Brazil. http://hdl.handle.net/20.500.12708/90909 ( reposiTUm)

Selberherr, S. (2017). Integrated Gas Sensors for Wearable Electronics. IEEE EDS Distinguished Lecture, Campinas, Brazil. http://hdl.handle.net/20.500.12708/90910 ( reposiTUm)

Nedjalkov, M., Ellinghaus, P., Weinbub, J., Selberherr, S., Sadi, T., Asenov, A., Wang, L., Amoroso, S. M., & Towie, E. (2016). Physical Models for Variation-Aware Device Simulation. Workshop on Variability-Aware Design Technology Co-Optimization, Nürnberg, Germany. http://hdl.handle.net/20.500.12708/90786 ( reposiTUm)

Nedjalkov, M., Weinbub, J., Ellinghaus, P., & Selberherr, S. (2016). Wigner Signed Particles - An Intuitive Alternative of Particle-Wave Duality. SEMODAY Meeting, Florenz, Italy. http://hdl.handle.net/20.500.12708/90787 ( reposiTUm)

Selberherr, S. (2015). The Evolution and Potential Future of Microelectronics. IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. http://hdl.handle.net/20.500.12708/90714 ( reposiTUm)

Selberherr, S. (2015). CMOS-Compatible Spintronic Devices. IEEE EDS Mini-Colloquium Distinguished Lecture, Seaport Conference Center, Oranjestad, Aruba, Non-EU. http://hdl.handle.net/20.500.12708/90729 ( reposiTUm)

Selberherr, S. (2014). Modeling Spin-Based Electronic Devices & About Voids in Copper Interconnects. ISEE Academic Lecture, Hangzhou, China. http://hdl.handle.net/20.500.12708/90717 ( reposiTUm)

Selberherr, S. (2014). Modeling Spin-Based Electronic Devices. IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. http://hdl.handle.net/20.500.12708/90716 ( reposiTUm)

Selberherr, S. (2014). Modeling Spin-Based Electronic Devices. IEEE EDS Mini-Colloquium Distinguished Lecture, Seaport Conference Center, Oranjestad, Aruba, Non-EU. http://hdl.handle.net/20.500.12708/90728 ( reposiTUm)

Sverdlov, V., Osintsev, D., & Selberherr, S. (2014). From Strained SOI MOSFET to Spin MOSFET with Strain: a Modeling Approach. Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada, Austria. http://hdl.handle.net/20.500.12708/90347 ( reposiTUm)

Singulani, A. P., Ceric, H., & Selberherr, S. (2013). Stress Evolution in the Metal Layers of TSVs with Bosch Scallops. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/90205 ( reposiTUm)

Selberherr, S. (2012). Transport Modeling for Nanoscale Semiconductor Devices. IEEE EDS Mini-Colloquium Distinguished Lecture, Seaport Conference Center, Oranjestad, Aruba, Non-EU. http://hdl.handle.net/20.500.12708/90719 ( reposiTUm)

Selberherr, S. (2012). Recent Developments in Advanced Memory Modeling. IEEE EDS Mini-Colloquium Distinguished Lecture, Seaport Conference Center, Oranjestad, Aruba, Non-EU. http://hdl.handle.net/20.500.12708/90718 ( reposiTUm)

Axelevitch, A., Palankovski, V., Selberherr, S., & Golan, G. (2012). Large Silicon Solar Cells of a Lateral Type. 2nd International Conference on Crystalline Silicon Photovoltaics (Silicon PV 2012), Leuven, Belgium, EU. http://hdl.handle.net/20.500.12708/90104 ( reposiTUm)

Selberherr, S. (2011). Transport Modeling for Nanoscale Semiconductor Devices. IEEE EDS Mini-Colloquium Distinguished Lecture, Seaport Conference Center, Oranjestad, Aruba, Non-EU. http://hdl.handle.net/20.500.12708/90706 ( reposiTUm)

Orio, R., Ceric, H., & Selberherr, S. (2011). A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects. 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France, EU. http://hdl.handle.net/20.500.12708/89571 ( reposiTUm)

Selberherr, S. (2010). Modeling Solar Cells. IEEE EDS Mini-Colloquium Distinguished Lecture, Seaport Conference Center, Oranjestad, Aruba, Non-EU. http://hdl.handle.net/20.500.12708/90707 ( reposiTUm)

Selberherr, S. (2010). Modeling Floating Body Z-RAM Storage Cells. IEEE EDS Mini-Colloquium Distinguished Lecture, Seaport Conference Center, Oranjestad, Aruba, Non-EU. http://hdl.handle.net/20.500.12708/90708 ( reposiTUm)

Selberherr, S. (2009). Strain Engineering in CMOS Devices. IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. http://hdl.handle.net/20.500.12708/90709 ( reposiTUm)

Selberherr, S. (2008). Process Simulation for Modern Microelectronics Technologies. IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. http://hdl.handle.net/20.500.12708/90711 ( reposiTUm)

Selberherr, S. (2008). Challenges of the Nanoscale Era. IEEE EDS Mini-Colloquium Distinguished Lecture, Seaport Conference Center, Oranjestad, Aruba, Non-EU. http://hdl.handle.net/20.500.12708/90710 ( reposiTUm)

Selberherr, S. (2007). Strain Engineering for Nanoscale CMOS Transistors. IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. http://hdl.handle.net/20.500.12708/90713 ( reposiTUm)

Selberherr, S. (2007). Microeletronics Modeling. IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. http://hdl.handle.net/20.500.12708/90712 ( reposiTUm)

Cervenka, J., Ceric, H., & Selberherr, S. (2007). Three-Dimensional Simulation of Sacriﬁcial Etching. SPIE Smart Sensors, Actuators, and MEMS, Masapalomas, Spain, EU. http://hdl.handle.net/20.500.12708/88615 ( reposiTUm)

Selberherr, S. (2006). About Models and Simulation of Nano-Scale Devices. IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. http://hdl.handle.net/20.500.12708/90721 ( reposiTUm)

Selberherr, S. (2005). Current Transport in Upcoming Microelectronic Devices. IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. http://hdl.handle.net/20.500.12708/90722 ( reposiTUm)

Wessner, W., Ceric, H., Hollauer, C., Langer, E., & Selberherr, S. (2005). Electromigration Reliability TCAD Solutions. SEMICON Europa2005, München, Austria. http://hdl.handle.net/20.500.12708/88274 ( reposiTUm)

Holzer, S., Hollauer, C., Ceric, H., Wagner, S., Langer, E., Grasser, T., & Selberherr, S. (2005). Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress. SPIE VLSI Circuits and Systems, Sevilla, Spain, Austria. http://hdl.handle.net/20.500.12708/88317 ( reposiTUm)

Selberherr, S. (2004). Analysis of High Speed Heterostructure Devices. IEEE EDS Mini-Colloquium Distinguished Lecture, Seaport Conference Center, Oranjestad, Aruba, Non-EU. http://hdl.handle.net/20.500.12708/90723 ( reposiTUm)

Selberherr, S. (2004). Gate Currents in Small MOSFETs. IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. http://hdl.handle.net/20.500.12708/90724 ( reposiTUm)

Ayalew, T., Gehring, A., Grasser, T., & Selberherr, S. (2004). Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/88145 ( reposiTUm)

Sverdlov, V., Kosina, H., Ringhofer, Ch., Nedjalkov, M., & Selberherr, S. (2004). Beyond the Golden Rule in Electron-Phonon Scattering: an Advanced Monte Carlo Algorithm. DFG Workshop on Multiscale Problems in Quantum Mechanics and Averaging Techniques, Garching, Austria. http://hdl.handle.net/20.500.12708/88148 ( reposiTUm)

Gehring, A., & Selberherr, S. (2004). Statistical Simulation of Gate Dielectric Wearout, Leakage, and Breakdown. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/88144 ( reposiTUm)

Wagner, S., Grasser, T., & Selberherr, S. (2004). Evaluation of Linear Solver Modules for Semiconductor Device Simulation. International Conference on Mathematical Problems in Engineering and Aerospace Sciences (ICNPAA), Timisoara, Austria. http://hdl.handle.net/20.500.12708/88244 ( reposiTUm)

Selberherr, S. (2003). Modeling High Speed Semiconductor Devices of Modern Communication Systems. IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. http://hdl.handle.net/20.500.12708/90725 ( reposiTUm)

Selberherr, S. (2003). Past and Future of Microelectronics Technology. IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. http://hdl.handle.net/20.500.12708/90726 ( reposiTUm)

Gehring, A., Jimenez-Molinos, F., Kosina, H., Palma, A., Gamiz, F., & Selberherr, S. (2003). Modeling of Retention Time Degradation Due to Inelastic Trap-Assisted Tunneling in EEPROM Devices. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/87988 ( reposiTUm)

Ayalew, T., Gehring, A., Park, J. M., Grasser, T., & Selberherr, S. (2003). Improving SiC Lateral DMOSFET Reliability under High Field Stress. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/87982 ( reposiTUm)

Sheikholeslami, A., Heitzinger, C., Puchner, H., Badrieh, F., & Selberherr, S. (2003). Simulation of Void Formation in Interconnect Lines. SPIE VLSI Circuits and Systems, Sevilla, Spain, Austria. http://hdl.handle.net/20.500.12708/91306 ( reposiTUm)

Selberherr, S. (2002). Recent Advances in Transport Modeling for Miniaturized CMOS Devices. IEEE EDS Mini-Colloquium Distinguished Lecture, Seaport Conference Center, Oranjestad, Aruba, Non-EU. http://hdl.handle.net/20.500.12708/90628 ( reposiTUm)

Ceric, H., & Selberherr, S. (2002). Simulative Prediction of the Resistance Change due to Electromigration Induced Void Evolution. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/87973 ( reposiTUm)

Heitzinger, C., & Selberherr, S. (2000). An Extensible TCAD Optimization Framework Combining Gradient Based and Genetic Optimizers. SPIE Design, Modeling, and Simulation in Microelectronics, Singapur, Austria. http://hdl.handle.net/20.500.12708/87654 ( reposiTUm)

Palankovski, V., Rottinger, M., Simlinger, T., & Selberherr, S. (1997). Two-Dimensional Simulation and Comparison of Si-based and GaAs-based HBTs. III-V Semiconductor Device Simulation Workshop, Turin, Austria. http://hdl.handle.net/20.500.12708/87439 ( reposiTUm)

Kaiblinger-Grujin, G., Köpf, C., Kosina, H., & Selberherr, S. (1997). Dependence of Electron Mobility on Impurities in Compound Semiconductors. III-V Semiconductor Device Simulation Workshop, Turin, Austria. http://hdl.handle.net/20.500.12708/87438 ( reposiTUm)

Selberherr, S. (1997). The State of the Art in Technology Computer-Aided Design. Sematech Meeting on Microelectronics, Boston, Non-EU. http://hdl.handle.net/20.500.12708/88651 ( reposiTUm)

Selberherr, S. (1988). Process Modeling. Microcircuit Engineering Conference, Wien, Austria. http://hdl.handle.net/20.500.12708/87865 ( reposiTUm)

Berichte

Ceric, H., Hehenberger, P. P., Milovanovic, G., Sverdlov, V., Vasicek, M., & Selberherr, S. (2009). VISTA Status Report June 2009. http://hdl.handle.net/20.500.12708/35720 ( reposiTUm)

Baumgartner, O., Ertl, O., Orio, R., Wagner, P.-J., Windbacher, T., & Selberherr, S. (2009). VISTA Status Report December 2009. http://hdl.handle.net/20.500.12708/35879 ( reposiTUm)

Ceric, H., Grasser, T., Orio, R., Pourfath, M., Vasicek, M., & Selberherr, S. (2008). VISTA Status Report July 2008. http://hdl.handle.net/20.500.12708/34954 ( reposiTUm)

Baumgartner, O., Ertl, O., Gös, W., Stimpfl, F., Windbacher, T., & Selberherr, S. (2008). VISTA Status Report December 2008. http://hdl.handle.net/20.500.12708/35167 ( reposiTUm)

Baumgartner, O., Gös, W., Nentchev, A., Stimpfl, F., Sverdlov, V., & Selberherr, S. (2007). VISTA Status Report December 2007. http://hdl.handle.net/20.500.12708/31399 ( reposiTUm)

Ceric, H., Dhar, S., Karlowatz, G., Li, L., Pourfath, M., & Selberherr, S. (2007). VISTA Status Report June 2007. http://hdl.handle.net/20.500.12708/31398 ( reposiTUm)

Entner, R., Heinzl, R., Nentchev, A., Ungersböck, S. E., Wagner, M., & Selberherr, S. (2006). VISTA Status Report December 2006. http://hdl.handle.net/20.500.12708/31422 ( reposiTUm)

Dhar, S., Li, L., Pourfath, M., Spevak, M., Sverdlov, V., & Selberherr, S. (2006). VISTA Status Report June 2006. http://hdl.handle.net/20.500.12708/31421 ( reposiTUm)

Ceric, H., Karner, M., Nentchev, A., Schwaha, P., Ungersböck, S. E., & Selberherr, S. (2005). VISTA Status Report December 2005. http://hdl.handle.net/20.500.12708/31424 ( reposiTUm)

Entner, R., Heinzl, R., Hollauer, C., Sheikholeslami, A., Wittmann, R., & Selberherr, S. (2005). VISTA Status Report June 2005. http://hdl.handle.net/20.500.12708/31423 ( reposiTUm)

Gehring, A., Pourfath, M., Ungersböck, S. E., Wagner, S., Wessner, W., & Selberherr, S. (2004). VISTA Status Report December 2004. http://hdl.handle.net/20.500.12708/31426 ( reposiTUm)

Ceric, H., Holzer, S., Sheikholeslami, A., Ayalew, T., Wittmann, R., & Selberherr, S. (2004). VISTA Status Report June 2004. http://hdl.handle.net/20.500.12708/31425 ( reposiTUm)

Gehring, A., Heitzinger, C., Hössinger, A., Ungersböck, S. E., Wessner, W., & Selberherr, S. (2003). VISTA Status Report December 2003. http://hdl.handle.net/20.500.12708/31428 ( reposiTUm)

Hollauer, C., Sheikholeslami, A., Palankovski, V., Wagner, S., Wittmann, R., & Selberherr, S. (2003). VISTA Status Report June 2003. http://hdl.handle.net/20.500.12708/31427 ( reposiTUm)

Ceric, H., Dragosits, K., Gehring, A., Smirnov, S., Palankovski, V., & Selberherr, S. (2002). VISTA Status Report December 2002. http://hdl.handle.net/20.500.12708/31430 ( reposiTUm)

Gritsch, M., Heitzinger, C., Park, J. M., Klima, R., Rodriguez-Torres, R., & Selberherr, S. (2002). VISTA Status Report June 2002. http://hdl.handle.net/20.500.12708/31429 ( reposiTUm)

Binder, T., Cervenka, J., Gehring, A., Harlander, C., Heitzinger, C., & Selberherr, S. (2001). VISTA Status Report June 2001. http://hdl.handle.net/20.500.12708/31431 ( reposiTUm)

Grasser, T., Gritsch, M., Heitzinger, C., Hössinger, A., & Selberherr, S. (2001). VISTA Status Report December 2001. http://hdl.handle.net/20.500.12708/31432 ( reposiTUm)

Binder, T., Gritsch, M., Heitzinger, C., Palankovski, V., & Selberherr, S. (2000). VISTA Status Report December 2000. http://hdl.handle.net/20.500.12708/31434 ( reposiTUm)

Dragosits, K., Harlander, C., Kosik, R., Kosina, H., Nedjalkov, M., & Selberherr, S. (2000). VISTA Status Report June 2000. http://hdl.handle.net/20.500.12708/31433 ( reposiTUm)

Grasser, T., Hössinger, A., Kosik, R., Mlekus, R., Pyka, W., Stockinger, M., & Selberherr, S. (1999). VISTA Status Report December 1999. http://hdl.handle.net/20.500.12708/31436 ( reposiTUm)

Dragosits, K., Grasser, T., & Selberherr, S. (1998). VISTA Status Report June 1998. http://hdl.handle.net/20.500.12708/31437 ( reposiTUm)

Klima, R., Palankovski, V., Radi, M., Strasser, R., & Selberherr, S. (1998). VISTA Status Report December 1998. http://hdl.handle.net/20.500.12708/31438 ( reposiTUm)

Grasser, T., Hössinger, A., Kirchauer, H., Knaipp, M., Martins, R., Plasun, R., Rottinger, M., Schrom, G., & Selberherr, S. (1997). VISTA Status Report December 1997. http://hdl.handle.net/20.500.12708/31440 ( reposiTUm)

Knaipp, M., Kosina, H., Mlekus, R., Radi, M., Rottinger, M., & Selberherr, S. (1997). VISTA Status Report June 1997. http://hdl.handle.net/20.500.12708/31439 ( reposiTUm)

Martins, R., Puchner, H., Selberherr, S., Simlinger, T., & Tuppa, W. (1996). VISTA Status Report June 1996. http://hdl.handle.net/20.500.12708/31441 ( reposiTUm)

Kirchauer, H., Plasun, R., Radi, M., Selberherr, S., & Strasser, R. (1996). VISTA Status Report December 1996. http://hdl.handle.net/20.500.12708/31442 ( reposiTUm)

Knaipp, M., Pichler, C., Rieger, G., Rottinger, M., Sabelka, R., Selberherr, S., & Strasser, R. (1995). VISTA Status Report December 1995. http://hdl.handle.net/20.500.12708/31444 ( reposiTUm)

Mlekus, R., Pichler, C., Puchner, H., Selberherr, S., & Tuppa, W. (1995). VISTA Status Report June 1995. http://hdl.handle.net/20.500.12708/31443 ( reposiTUm)

Bohmayr, W., Halama, S., Pichler, C., Selberherr, S., Simlinger, T., Strasser, E., & Tuppa, W. (1994). VISTA Status Report June 1994. http://hdl.handle.net/20.500.12708/31445 ( reposiTUm)

Bohmayr, W., Fasching, F., Rieger, G., Selberherr, S., & Simlinger, T. (1994). VISTA Status Report December 1994. http://hdl.handle.net/20.500.12708/31446 ( reposiTUm)

Fasching, F., Halama, S., Pichler, C., Pimingstorfer, H., Rieger, G., Schrom, G., Selberherr, S., & Stiftinger, M. (1993). VISTA Status Report June 1993. http://hdl.handle.net/20.500.12708/31447 ( reposiTUm)

Halama, S., Pichler, C., Rieger, G., Selberherr, S., Simlinger, T., Stippel, H., & Strasser, E. (1993). VISTA Status Report December 1993. http://hdl.handle.net/20.500.12708/31448 ( reposiTUm)

Spezialbeiträge

Selberherr, S. (1988). Computerunterstützte Konstruktion von Bauelementen der Mikroelektronik. Österreichische Hochschulzeitung : ÖHZ, 7, 25. http://hdl.handle.net/20.500.12708/174330 ( reposiTUm)

Selberherr, S. (1988). Computer für Wissenschaft und Forschung. Österreichische Hochschulzeitung : ÖHZ, 5, 9–10. http://hdl.handle.net/20.500.12708/174366 ( reposiTUm)

Hochschulschriften

Selberherr, S. (1983). Analysis and simulation of semiconductor devices [Professorial Dissertation, Technische Universität Wien]. reposiTUm. https://doi.org/10.34726/hss.1983.00319699 ( reposiTUm)

Selberherr, S. (1981). Zweidimensionale Modellierung von MOS-Transistoren [Dissertation, Technische Universität Wien]. reposiTUm. https://doi.org/10.34726/hss.1981.00317827 ( reposiTUm)