Fuchsberger, A., Sistani, M., Eysin, K., & Weber, W. M. (2026). Negative Differential Transconductance Induced by Electrostatic Doping in Multi‐Functional Si Field‐Effect Transistors. Advanced Materials Technologies, 11(2), Article e01768. https://doi.org/10.1002/admt.202501768 ( reposiTUm)

David, M., Dabrowska, A., Sistani, M., Song, Z., Maraspini, F., Wu, Y., Wenk, M., Fuchsberger, A., Vogl, L., Schweizer, P., Szedlak, R., Schwarz, B., Weber, W. M., Strasser, G., García de Abajo, F. J., Darmo, J., Lendl, B., & Lugstein, A. (2026). Mid-Infrared Sensing and Ultrafast Photoresponse in Silicon-Based Plasmonic Detectors. ACS Photonics, 13(11), 3026–3039. https://doi.org/10.1021/acsphotonics.5c02857 ( reposiTUm)

Fuchsberger, A., Knaller, N., Wind, L., Wahler, V., Nazzari, D., Weber, W. M., & Sistani, M. (2026). A Reconfigurable Transistor Enabling Adaptive Computing at Cryogenic Temperatures. IEEE Electron Device Letters, 47(6), 1241–1244. https://doi.org/10.1109/LED.2026.3683584 ( reposiTUm)

Fuchsberger, A., Knaller, N., Nazzari, D., Marböck, J., Prado Navarrete, E., Brehm, M., Pacheco-Sanchez, A., Vogl, L., Schweizer, P., Weber, W. M., & Sistani, M. (2026). A Cryogenic Ultra-Thin Body SiGeSn Transistor. IEEE Journal of the Electron Devices Society, 14, 24–29. https://doi.org/10.1109/JEDS.2025.3647706 ( reposiTUm)

Fuchsberger, A., Wind, L., Nazzari, D., Aberl, J., Prado Navarrete, E., Brehm, M., Hartmann, J.-M., Fournel, F., Vogl, L., Schweizer, P., Minor, A. M., Sistani, M., & Weber, W. M. (2025). Temperature-dependent electronic transport in reconfigurable transistors based on Ge on SOI and strained SOI platforms. Solid-State Electronics, 226, Article 109055. https://doi.org/10.1016/j.sse.2024.109055 ( reposiTUm)

Behrle, R., Pacheco-Sanchez, A., Barth, S., Weber, W. M., & Sistani, M. (2025). Thermionic injection analysis in germanium nanowire Schottky junction FETs by means of 1D and 3D extraction methods. Nanoscale Advances, 7(8), 2266–2271. https://doi.org/10.1039/d4na00957f ( reposiTUm)

Sistani, M., Tatli, E., Wind, L., Behrle, R., Lefloch, F., Lellig, S., Maeder Xavier, Weber, W. M., Murphy-Armando, F., & Lugstein, A. (2025). Gate-induced electron transfer effects in monolithic Al–Ge–Al nanostructures. Applied Physics Letters, 126(25), Article 253504. https://doi.org/10.1063/5.0271499 ( reposiTUm)

Fuchsberger, A., Verdianu, A., Wind, L., Nazzari, D., Prado Navarrete, E., Wilfingseder, C., Aberl, J., Brehm, M., Hartmann, J.-M., Sistani, M., & Weber, W. M. (2025). Electrostatic gating in Ge-based reconfigurable field-effect transistors. IEEE Transactions on Electron Devices, 72(4), 1631–1636. https://doi.org/10.1109/TED.2025.3545802 ( reposiTUm)

Fuchsberger, A., Dobler, A., Wind, L., Kramer, A., Kulenkampff, J., Reuter, M., Nazzari, D., Galderisi, G., Prado Navarrete, E., Aberl, J., Brehm, M., Mikolajick, T., Trommer, J., Hofmann, K., Sistani, M., & Weber, W. M. (2025). Reconfigurable Ge transistors enabling adaptive differential amplifiers. IEEE Transactions on Electron Devices, 72(6), 2868–2873. https://doi.org/10.1109/TED.2025.3559912 ( reposiTUm)

Nazzari, D., Wind, L., Sistani, M., Mayr, D., Kim, K., Wahler, V., & Weber, W. M. (2025). Nonvolatile Reconfigurable Transistor via Ferroelectrically Induced Current Modulation. ACS APPLIED MATERIALS & INTERFACES, 17(7), 10784–10791. https://doi.org/10.1021/acsami.4c16400 ( reposiTUm)

Fuchsberger, A., Eysin, K., Wind, L., Prado Navarrete, E., Aberl, J., Brehm, M., Ratschinski, I., Hiller, D., Sistani, M., & Weber, W. M. (2025). Modulation-acceptor-doped SiGe Schottky barrier field-effect transistors. IEEE Electron Device Letters, 46(8), 1429–1432. https://doi.org/10.1109/LED.2025.3577243 ( reposiTUm)

Wind, L., Preiß, S., Nazzari, D., Aberl, J., Navarrete, E. P., Brehm, M., Vogl, L., Minor, A. M., Sistani, M., & Weber, W. M. (2025). Si/Ge₁₋ₓSnₓ/Si transistors with highly transparent Al contacts. Solid-State Electronics, 225, Article 109069. https://doi.org/10.1016/j.sse.2025.109069 ( reposiTUm)

Fuchsberger, A., Wind, L., Pacheco-Sanchez, A., Aberl, J., Brehm, M., Vogl, L., Schweizer, P., Sistani, M., & Weber, W. M. (2025). A Schottky barrier field-effect transistor platform with variable Ge content on SOI. Solid-State Electronics, 230, Article 109221. https://doi.org/10.1016/j.sse.2025.109221 ( reposiTUm)

Behrle, R., Smoliner, J., Wind, L., Nazzari, D., Lugstein, A., Weber, W. M., & Sistani, M. (2024). Bias-tunable temperature coefficient of resistance in Ge transistors. Applied Physics Letters, 124(9), 093510-1-093510–093515. https://doi.org/10.1063/5.0191503 ( reposiTUm)

Wind, L., Maierhofer, M., Fuchsberger, A., Sistani, M., & Weber, W. M. (2024). Realization of a complementary full adder based on reconfigurable transistors. IEEE Electron Device Letters, 45(4), 724–727. https://doi.org/10.1109/LED.2024.3368110 ( reposiTUm)

Wind, L., Behrle, R., den Hertog, M. I., Murphey, C. G. E., Cahoon, J. F., Sistani, M., & Weber, W. M. (2024). Nanoscale Reconfigurable Si Transistors: From Wires to Sheets and Unto Multi‐Wire Channels. Advanced Electronic Materials, 10(2), Article 2300483. https://doi.org/10.1002/aelm.202300483 ( reposiTUm)

Fuchsberger, A., Wind, L., Nazzari, D., Navarrete, E. P., Aberl, J., Brehm, M., Sistani, M., & Weber, W. M. (2024). Implementation of Negative Differential Resistance-Based Circuits in Multigate Ge Transistors. IEEE Transactions on Electron Devices, 71(12), 7277–7280. https://doi.org/10.1109/TED.2024.3485600 ( reposiTUm)

Fuchsberger, A., Wind, L., Nazzari, D., Kuhberger, L., Popp, D., Aberl, J., Prado Navarrete, E., Brehm, M., Vogl, L., Schweizer, P., Lellig, S., Maeder Xavier, Sistani, M., & Weber, W. M. (2024). A Runtime Reconfigurable Ge Field-Effect Transistor With Symmetric On-States. IEEE Journal of the Electron Devices Society, 12, 83–87. https://doi.org/10.1109/JEDS.2024.3350209 ( reposiTUm)

Bestelink, E., Galderisi, G., Golec, P., Han, Y., Iniguez, B., Kloes, A., Knoch, J., Matsui, H., Mikolajick, T., Niang, K. M., Richstein, B., Schwarz, M., Sistani, M., Sporea, R. A., Trommer, J., Weber, W. M., Zhao, Q.-T., & Calvet, L. E. (2024). Roadmap for Schottky barrier transistors. NANO FUTURES, 8(4), Article 042001. https://doi.org/10.1088/2399-1984/ad92d1 ( reposiTUm)

Fuchsberger, A., Wind, L., Nazzari, D., Dobler, A., Aberl, J., Prado Navarrete, E., Brehm, M., Vogl, L., Schweizer, P., Lellig, S., Maeder, X., Sistani, M., & Weber, W. M. (2024). A reconfigurable Ge transistor functionally diversified by negative differential resistance. IEEE Journal of the Electron Devices Society, 12, 541–547. https://doi.org/10.34726/6979 ( reposiTUm)

Behrle, R., Murphey, C. G. E., Cahoon, J. F., Barth, S., den Hertog, M. I., Weber, W. M., & Sistani, M. (2024). Understanding the electronic transport of Al-Si and Al-Ge nanojunctions by exploiting temperature-dependent bias spectroscopy. ACS APPLIED MATERIALS & INTERFACES, 16(15), 19350–19358. https://doi.org/10.1021/acsami.3c18674 ( reposiTUm)

David, M., Doganlar, I. C., Nazzari, D., Arigliani, E., Wacht, D., Sistani, M., Detz, H., Ramer, G., Lendl, B., Weber, W. M., Strasser, G., & Hinkov, B. (2024). Surface Protection and Activation of Mid-IR Plasmonic Waveguides for Spectroscopy of Liquids. Journal of Lightwave Technology, 42(2), 748–759. https://doi.org/10.1109/JLT.2023.3321034 ( reposiTUm)

Wind, L., Fuchsberger, A., Demirkiran, Ö., Vogl, L., Schweizer, P., Maeder, X., Sistani, M., & Weber, W. M. (2024). Reconfigurable Si field-effect transistors with symmetric on-states enabling adaptive complementary and combinational logic. IEEE Transactions on Electron Devices, 71(2), 1302–1307. https://doi.org/10.1109/TED.2023.3346361 ( reposiTUm)

Behrle, R., Sistani, M., Lugstein, A., Sadre Momtaz, Z., den Hertog, M. I., Pogany, D., & Weber, W. M. (2023). Low-frequency noise in quasi-ballistic monolithic Al–Ge–Al nanowire field effect transistors. Applied Physics Letters, 122(24), Article 243504. https://doi.org/10.1063/5.0147208 ( reposiTUm)

Behrle, R., Krause Vanessa, Seifner, M. S., Köstler, B., Dick, K. A., Wagner, M., Sistani, M., & Barth, S. (2023). Electrical and Structural Properties of Si₁−ₓGeₓ Nanowires Prepared from a Single-Source Precursor. Nanomaterials, 13(4), Article 627. https://doi.org/10.3390/nano13040627 ( reposiTUm)

Song, Z., Sistani, M., Schwingshandl, F., & Lugstein, A. (2023). Controlling Hot Charge Carrier Transfer in Monolithic Al-Si-Al Heterostructures for Plasmonic On-Chip Energy Harvesting. Small, Article 2301055. https://doi.org/10.1002/smll.202301055 ( reposiTUm)

Nazzari, D., Genser, J. A., Sistani, M., Bartmann, M. G., Cartoixà, X., Rurali, R., Weber, W. M., & Lugstein, A. (2023). Reliably straining suspended van der Waals heterostructures. APL Materials, 11(11), Article 111123. https://doi.org/10.1063/5.0166460 ( reposiTUm)

Fuchsberger, A., Wind, L., Sistani, M., Behrle, R., Nazzari, D., Aberl, J., Prado Navarrete, E., Vukŭsić, L., Brehm, M., Schweizer, P., Vogl, L., Maeder, X., & Weber, W. M. (2023). Reconfigurable Field‐Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts. Advanced Electronic Materials, Article 2201259. https://doi.org/10.1002/aelm.202201259 ( reposiTUm)

Böckle, R., Sistani, M., Lipovec, B., Pohl, D., Rellinghaus, B., Lugstein, A., & Weber, W. M. (2022). A Top‐Down Platform Enabling Ge Based Reconfigurable Transistors. Advanced Materials Technologies, 7(1), 2100647. https://doi.org/10.1002/admt.202100647 ( reposiTUm)

Mikolajick, T., Galderisi, G., Rai, S., Simon, M., Böckle, R., Sistani, M., Cakirlar, C., Bhattacharjee, N., Mauersberger, T., Heinzig, A., Kumar, A., Weber, W. M., & Trommer, J. (2022). Reconfigurable field effect transistors: A technology enablers perspective. Solid-State Electronics, 194(108381), 108381. https://doi.org/10.1016/j.sse.2022.108381 ( reposiTUm)

Bartmann, M. G., Sistani, M., Luhmann, N., Schmid, S., Bertagnolli, E., Lugstein, A., & Smoliner, J. (2022). Germanium nanowire microbolometer. Nanotechnology, 33(24), 245201. https://doi.org/10.1088/1361-6528/ac5aec ( reposiTUm)

Böckle, R., Sistani, M., Bažíková, M., Wind, L., Sadre‐Momtaz, Z., den Hertog, M. I., Murphey, C. G. E., Cahoon, J. F., & Weber, W. M. (2022). Reconfigurable Complementary and Combinational Logic Based on Monolithic and Single‐Crystalline Al‐Si Heterostructures. Advanced Electronic Materials, 2200567-1-2200567–2200568. https://doi.org/10.1002/aelm.202200567 ( reposiTUm)

Köstler, B., Jungwirth, F., Achenbach, L., Sistani, M., Bolte, M., Lerner, H.-W., Albert, P., Wagner, M., & Barth, S. (2022). Mixed-Substituted Single-Source Precursors for Si1-xGex Thin Film Deposition. Inorganic Chemistry, 61(43), 17248–17255. https://doi.org/10.1021/acs.inorgchem.2c02835 ( reposiTUm)

Jungwirth, F., Porrati, F., Knez, D., Sistani, M., Plank, H., Huth, M., & Barth, S. (2022). Focused Ion Beam vs Focused Electron Beam Deposition of Cobalt Silicide Nanostructures Using Single-Source Precursors: Implications for Nanoelectronic Gates, Interconnects, and Spintronics. ACS Applied Nano Materials, 5(10), 14759–14770. https://doi.org/10.1021/acsanm.2c03074 ( reposiTUm)

Wind, L., Sistani, M., Böckle, R., Smoliner, J., Vukŭsić, L., Aberl, J., Brehm, M., Schweizer, P., Maeder, X., Michler, J., Fournel, F., Hartmann, J.-M., & Weber, W. M. (2022). Composition Dependent Electrical Transport in Si1-x Gex Nanosheets with Monolithic Single-Elementary Al Contacts. Small, Article 2204178. https://doi.org/10.1002/smll.202204178 ( reposiTUm)

Wind, L., Böckle, R., Sistani, M., Schweizer, P., Maeder, X., Michler, J., Murphey, C. G. E., Cahoon, J., & Weber, W. M. (2022). Monolithic and Single-Crystalline Aluminum−Silicon Heterostructures. ACS Applied Materials and Interfaces, 14(22), 26238–26244. https://doi.org/10.1021/acsami.2c04599 ( reposiTUm)

Böckle, R., Sistani, M., Eysin, K., Bartmann, M. G., Luong, M. A., den Hertog, M. I., Lugstein, A., & Weber, W. M. (2021). Gate-Tunable Negative Differential Resistance in Next-Generation Ge Nanodevices and their Performance Metrics. Advanced Electronic Materials, 7(3), 2001178. https://doi.org/10.1002/aelm.202001178 ( reposiTUm)

Bartmann, M. G., Sistani, M., Glassner, S., Salem, B., Baron, T., Gentile, P., Smoliner, J., & Lugstein, A. (2021). Verifying the band gap narrowing in tensile strained Ge nanowires by electrical means. Nanotechnology, 32(14), 145711. https://doi.org/10.1088/1361-6528/abd0b2 ( reposiTUm)

Delaforce, J., Sistani, M., Kramer, R. B. G., Luong, M. A., Roch, N., Weber, W. M., den Hertog, M. I., Robin, E., Naud, C., Lugstein, A., & Buisson, O. (2021). Al-Ge-Al Nanowire Heterostructure: From Single-Hole Quantum Dot to Josephson Effect. Advanced Materials, 33(39), 2101989. https://doi.org/10.1002/adma.202101989 ( reposiTUm)

Song, Z., Sistani, M., Wind, L., Pohl, D., Rellinghaus, B., Weber, W. M., & Lugstein, A. (2021). Plasmon-assisted polarization-sensitive photodetection with tunable polarity for integrated silicon photonic communication systems. Nanotechnology, 32(50), 505205. https://doi.org/10.1088/1361-6528/ac2848 ( reposiTUm)

Sistani, M., Böckle, R., Bartmann, M. G., Lugstein, A., & Weber, W. M. (2021). Bias-Switchable Photoconductance in a Nanoscale Ge Photodetector Operated in the Negative Differential Resistance Regime. ACS Photonics, 8(12), 3469–3475. https://doi.org/10.1021/acsphotonics.1c01359 ( reposiTUm)

David, M., Dabrowska, A., Sistani, M., Doganlar, I. C., Hinkelmann, E., Detz, H., Weber, W. M., Lendl, B., Strasser, G., & Hinkov, B. (2021). Octave-spanning low-loss mid-IR waveguides based on semiconductor-loaded plasmonics. Optics Express, 29(26), 43567. https://doi.org/10.1364/oe.443966 ( reposiTUm)

Sistani, M., Böckle, R., Falkensteiner, D., Luong, M. A., den Hertog, M. I., Lugstein, A., & Weber, W. M. (2021). Nanometer-Scale Ge Based Adaptable Transistors Providing Programmable Negative Differential Resistance Enabling Multi Valued Logic. ACS Nano, 15(11), 18135–18141. https://doi.org/10.1021/acsnano.1c06801 ( reposiTUm)

Sistani, M., Böckle, R., Wind, L., Eysin, K., Maeder, X., Schweizer, P., Michler, J., Lugstein, A., & Weber, W. M. (2021). Polycrystalline Ge Nanosheets Embedded in Metal‐Semiconductor Heterostructures Enabling Wafer‐Scale 3D Integration of Ge Nanodevices with Self‐Aligned Al Contacts. Advanced Electronic Materials, 7(5), 2100101. https://doi.org/10.1002/aelm.202100101 ( reposiTUm)

Wind, L., Sistani, M., Song, Z., Maeder, X., Pohl, D., Michler, J., Rellinghaus, B., Weber, W. M., & Lugstein, A. (2021). Monolithic Metal−Semiconductor−Metal Heterostructures Enabling Next-Generation Germanium Nanodevices. ACS Applied Materials and Interfaces, 13(10), 12393–12399. https://doi.org/10.1021/acsami.1c00502 ( reposiTUm)

Sistani, M., Delaforce, J., Bharadwaj, K., Luong, M., Nacenta Mendivil, J., Roch, N., den Hertog, M., Kramer, R. B. G., Buisson, O., Lugstein, A., & Naud, C. (2020). Coulomb blockade in monolithic and monocrystalline Al-Ge-Al nanowire heterostructures. Applied Physics Letters, 116(1), 013105. https://doi.org/10.1063/1.5126088 ( reposiTUm)

Luong, M. A., Robin, E., Pauc, N., Gentile, P., Sistani, M., Lugstein, A., Spies, M., Fernandez, B., & Den Hertog, M. I. (2020). In-Situ Transmission Electron Microscopy Imaging of Aluminium Diffusion in Germanium Nanowires for the Fabrication of Sub-10 nm Ge Quantum Disks. ACS Applied Nano Materials, 3(2), 1891–1899. https://doi.org/10.1021/acsanm.9b02564 ( reposiTUm)

Luong, M. A., Robin, E., Pauc, N., Gentile, P., Baron, T., Salem, B., Sistani, M., Lugstein, A., Spies, M., & den Hertog, M. (2020). Reversible Al Propagation in SixGe1- x Nanowires: Implications for Electrical Contact Formation. ACS Applied Nano Material, 3, 10427–10436. http://hdl.handle.net/20.500.12708/140798 ( reposiTUm)

Gächter, N., Könemann, F., Sistani, M., Bartmann, M. G., Sousa, M., Staudinger, P., Lugstein, A., & Gotsmann, B. (2020). Spatially Resolved Thermoelectric Effects in Operando Semiconductor-Metal Nanowire Heterostructures. Nanoscale, 12(40), 20590–20597. https://doi.org/10.1039/d0nr05504b ( reposiTUm)

Sistani, M., Staudinger, P., & Lugstein, A. (2020). Polarity Control in Ge Nanowires by Electronic Surface Doping. The Journal of Physical Chemistry C, 124(36), 19858–19863. https://doi.org/10.1021/acs.jpcc.0c05749 ( reposiTUm)

Böckle, R., Sistani, M., Staudinger, P., Seifner, M. S., Barth, S., & Lugstein, A. (2020). Ge Quantum Wire Memristor. Nanotechnology, 31(44), 445204. https://doi.org/10.1088/1361-6528/aba46b ( reposiTUm)

Sistani, M., Bartmann, M. G., Güsken, N. A., Oulton, R. F., Keshmiri, H., Luong, M. A., Momtaz, Z. S., Den Hertog, M. I., & Lugstein, A. (2020). Plasmon-Driven Hot Electron Transfer at Atomically Sharp Metal-Semiconductor Nanojunctions. ACS Photonics, 7(7), 1642–1648. https://doi.org/10.1021/acsphotonics.0c00557 ( reposiTUm)

Sistani, M., Bartmann, M. G., Güsken, N. A., Oulton, R. F., Keshmiri, H., Luong, M. A., Robin, E., den Hertog, M. I., & Lugstein, A. (2020). Stimulated Raman Scattering in Ge Nanowires. The Journal of Physical Chemistry C, 124(25), 13872–13877. https://doi.org/10.1021/acs.jpcc.0c02602 ( reposiTUm)

Dřínek, V., Remeš, Z., Klementová, M., Palatinus, L., Jarosová, M., Lugstein, A., Sistani, M., Kostejn, M., Jandová, V., & Fajgar, R. (2019). Ytterbium silicide nanostructures prepared by pulsed laser ablation inoven: Structural and electrical characterization. Materials Letters, 246, 17–19. https://doi.org/10.1016/j.matlet.2019.03.032 ( reposiTUm)

Sistani, M., Delaforce, J., Kramer, R. B. G., Roch, N., Luong, M. A., den Hertog, M. I., Robin, E., Smoliner, J., Yao, J., Lieber, C. M., Naud, C., Lugstein, A., & Buisson, O. (2019). Highly transparent contacts to the 1D hole gas in ultra-scaled Ge/Si core/shell nanowires. ACS Nano, 13(12), 14145–14151. https://doi.org/10.1021/acsnano.9b06809 ( reposiTUm)

Sistani, M., Bartmann, M. G., Güsken, N. A., Oulton, R. F., Keshmiri, H., Seifner, M. S., Barth, S., Fukata, N., Luong, M. A., den Hertog, M. I., & Lugstein, A. (2019). Nanoscale aluminum plasmonic waveguide with monolithically integrated germanium detector. Applied Physics Letters, 115(16), 161107. https://doi.org/10.1063/1.5115342 ( reposiTUm)

Seifner, M. S., Dijkstra, A., Bernardi, J., Steiger-Thirsfeld, A., Sistani, M., Lugstein, A., Haverkort, J., & Barth, S. (2019). Epitaxial Ge0.81Sn0.19 Nanowires for Nanoscale Mid-Infrared Emitters. ACS Nano, 13, 1847–1854. https://doi.org/10.34726/2507 ( reposiTUm)

Seifner, M. S., Sistani, M., Zivadinovic, I., Bartmann, M. G., Lugstein, A., & Barth, S. (2019). Drastic Changes in Material Composition and Electrical Properties of Gallium-Seeded Germanium Nanowires. Crystal Growth and Design. https://doi.org/10.1021/acs.cgd.9b00210 ( reposiTUm)

Benter, S., Dubrovskii, V. G., Bartmann, M. G., Campo, A., Zardo, I., Sistani, M., Stöger-Pollach, M., Lancaster, S., Detz, H., & Lugstein, A. (2019). Quasi One-Dimensional Metal–Semiconductor Heterostructures. Nano Letters. https://doi.org/10.1021/acs.nanolett.9b01076 ( reposiTUm)

Pertl, P., Seifner, M. S., Herzig, C., Limbeck, A., Sistani, M., Lugstein, A., & Barth, S. (2018). Solution-based low-temperature synthesis of germanium nanorods and nanowires. Monatshefte Für Chemie - Chemical Monthly. https://doi.org/10.1007/s00706-018-2191-1 ( reposiTUm)

Seifner, M. S., Sistani, M., Porrati, F., Di Prima, G., Pertl, P., Huth, M., Lugstein, A., & Barth, S. (2018). Direct Synthesis of Hyperdoped Germanium Nanowires. ACS Nano, 12(2), 1236–1241. https://doi.org/10.1021/acsnano.7b07248 ( reposiTUm)

Staudinger, P., Sistani, M., Greil, J., Bertagnolli, E., & Lugstein, A. (2018). Ultrascaled Germanium Nanowires for Highly Sensitive Photodetection at the Quantum Ballistic Limit. Nano Letters, 18(8), 5030–5035. https://doi.org/10.1021/acs.nanolett.8b01845 ( reposiTUm)

Sistani, M., Seifner, M. S., Bartmann, M. G., Smoliner, J., Lugstein, A., & Barth, S. (2018). Electrical characterization and examination of temperature-induced degradation of metastable Ge0.81Sn0.19 nanowires. Nanoscale, 10(41), 19443–19449. https://doi.org/10.1039/c8nr05296d ( reposiTUm)

Sistani, M., Luong, M. A., Den Hertog, M., Robin, E., Spies, M., Fernandez, B., Yao, J., Bertagnolli, E., & Lugstein, A. (2018). Monolithic axial and radial metal–semiconductor nanowire heterostructures. Nano Letters, 18(12), 7692–7697. https://doi.org/10.1021/acs.nanolett.8b03366 ( reposiTUm)

Sistani, M., Staudinger, P., Greil, J., Holzbauer, M., Detz, H., Bertagnolli, E., & Lugstein, A. (2017). Room-Temperature Quantum Ballistic Transport in Monolithic Ultrascaled Al−Ge−Al Nanowire Heterostructures. Nano Letters, 17(8), 4556–4561. https://doi.org/10.1021/acs.nanolett.7b00425 ( reposiTUm)

Sistani, M., Fuchsberger, A., Knaller, N., Wind, L., Wahler, V., Nazzari, D., Vogl, L., Schweizer, P., Prado-Navarrete E, Aberl, J., Brehm, M., & Weber, W. M. (2026). Monolithic Metal-Semiconductor Heterojunctions Enabling Adaptive Computation at Cryogenic Temperatures. In Book of Abstracts of the International Workshop on Superconductor Semiconductor Hybrids (2026) (pp. 91–92). http://hdl.handle.net/20.500.12708/226516 ( reposiTUm)

Maraspini, F., David, M., Sistani, M., Wind, L., Schwingshandl, F., Buisson, O., Naud, C., Weber, W. M., & Lugstein, A. (2025). Scalable Al-Ge Hybrid Heterostructures for Next-Generation Superconducting Quantum Devices. In Quantum Matter International Conference QUANTUMatter 2025 - Posters. Quantum Matter International Conference – QUANTUMatter 2025, Grenoble, France. http://hdl.handle.net/20.500.12708/216607 ( reposiTUm)

Galderisi, G., Kramer, A., Fuchsberger, A., Gonzalez-Medina Jose Maria, He Yuxuan, Hung Lee-Chi, Hong Li Marrit Jen, Kulenkampff, J., Reuter, M., Wind, L., Sistani, M., Mikolajick, T., Neckel-Wesling Bruno, Deng Marina, Maneux Cristell, Harpe Pieter, Prado Lopez, S., Baumgartner, O., Mukherjee Chhandak, … Trommer, J. (2025). Multi-Partner Project: Smart Sensor Analog Front-Ends Powered by Emerging Reconfigurable Devices (SENSOTERIC). In 2025 Design, Automation & Test in Europe Conference (DATE) (pp. 1–4). https://doi.org/10.23919/DATE64628.2025.10992831 ( reposiTUm)

Fuchsberger, A., Dobler, A., Wind, L., Kramer, A., Kulenkampff, J., Reuter, M., Nazzari, D., Galderisi, G., Prado Navarrete, E., Aberl, J., Brehm, M., Trommer, J., Hofmann, K., Sistani, M., & Weber, W. M. (2025). Electrostatically Adaptable Current Mirror based on Germanium Field-Effect Transistors. In 2025 IEEE International Symposium on Circuits and Systems (ISCAS). IEEE International Symposium on Circuits and Systems (ISCAS 2025), London, United Kingdom of Great Britain and Northern Ireland (the). https://doi.org/10.1109/ISCAS56072.2025.11043600 ( reposiTUm)

Wind, L., Fuchsberger, A., Sistani, M., & Weber, W. M. (2024). Three-Input Combinational Logic Gates based on Reconfigurable Si Field-Effect Transistors. In Proceedings 2024 Device Research Conference (DRC) (pp. 1–2). https://doi.org/10.1109/DRC61706.2024.10605460 ( reposiTUm)

Nazzari, D., Wind, L., Mayr, D., Kim, K., Lellig, S., Sistani, M., & Weber, W. M. (2024). Realization and characterization of HZO-based Schottky-Barrier FETs towards Logic-in-Memory applications. In Proceedings 2024 Device Research Conference (DRC) (pp. 1–3). https://doi.org/10.1109/DRC61706.2024.10605488 ( reposiTUm)

Fuchsberger, A., Wind, L., Nazzari, D., Aberl, J., Navarrete, E. P., Brehm, M., Vogl, L., Schweizer, P., Sistani, M., & Weber, W. M. (2024). Temperature-Dependent Electronic Transport in Reconfigurable Transistors based on Ge on SOI and Strained SOI Platforms. In 10th International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2024 : Abstract Book (pp. 40–41). http://hdl.handle.net/20.500.12708/208469 ( reposiTUm)

Behrle, R., Murphey, C. G. E., Cahoon, J. F., Barth, S. C., Den Hertog, M. I., Weber, W. M., & Sistani, M. (2024). Comparative Study of Charge Carrier Transport in Al-Si and Al-Ge Nanowire Heterostructure Transistors. In GADEST 2024. 20th Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST), Bad Schandau, Germany. http://hdl.handle.net/20.500.12708/200987 ( reposiTUm)

Prado Navarrete, E., Aberl, J., Fuchsberger, A., Wind, L., Nazzari, D., Sistani, M., Weber, W. M., Vogl, L., Schweizer, P., Maeder, X., & Brehm, M. (2024). Growth of (Si)Ge nanosheets by MBE at ultra-low temperatures for nanoelectronics applications. In 73rd Annual Meeting of the Austrian Physical Society: ÖPG Tagungsband Nr. 73 (pp. 187–187). http://hdl.handle.net/20.500.12708/204624 ( reposiTUm)

Behrle, R., Lugstein, A., den Hertog, M., Weber, W. M., & Sistani, M. (2023). Bias Spectroscopy of Negative Differential Resistance in Ge Nanowire Field Effect Transistors. In Nanowire Week 2023 : Conference Information & Abstracts (pp. 43–43). ( reposiTUm)

Behrle, R., Den Hertog, M. I., Lugstein, A., Weber, W. M., & Sistani, M. (2023). Bias Spectroscopy of Negative Differential Resistance in Ge Nanowire Cascode Circuits. In ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC) (pp. 37–40). IEEE. https://doi.org/10.34726/5319 ( reposiTUm)

Behrle, R., Sistani, M., Murphey, C. G. E., Cahoon, J., Barth S., Salem, B., Den Hertog, M., & Weber, W. M. (2023). Comparison and Analysis of Charge Carrier Transport in Al-Si/Ge Nanowire Heterostructure Field Effect Transistors. In Nanowire Week 2023 : Conference Information & Abstracts (pp. 86–86). http://hdl.handle.net/20.500.12708/189496 ( reposiTUm)

Hinkov, B., David, M., Pilat, F., Schwaighofer, A., Marschick, G., Arigliani, E., Souza, P. L., Doganlar Ismail C., Gsodam, X., Dabrowska, A., Wacht, D., Sistani, M., Nazzari, D., Disnan, D., Detz, H., Andrews, A. M., Schmid, U., Weber, W. M., Schwarz, B., … Strasser, G. (2023). On-chip liquid sensing using mid-IR plasmonics. In Optica Sensing Congress 2023 (AIS, FTS, HISE, Sensors, ES) (p. EW3E.3). Optica Publishing Group. https://doi.org/10.1364/ES.2023.EW3E.3 ( reposiTUm)

Behrle, R., Bažíková, M., Barth, S., Weber, W. M., & Sistani, M. (2023). Mapping Electronic Transport in Ge Nanowire SBFETs: From Tunneling to NDR. In 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC) (pp. 889–894). IEEE. https://doi.org/10.34726/5370 ( reposiTUm)

Weber, W. M., Wind, L., Fuchsberger, A., Behrle, R., Nazzari, D., Aberl, J., Navarrete Enrique Prado, Brehm, M., & Sistani, M. (2023). Ultrathin Germanium and Silicon-Germanium Nanosheet Transistors for Runtime Reconfigurable Electronics. In 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC) (pp. 446–447). IEEE. https://doi.org/10.1109/NMDC57951.2023.10343862 ( reposiTUm)

Wind, L., Böckle, R., Sistani, M., Vukusic, L., Aberl, J., Brehm, M., Schweizer, P., & Weber, W. M. (2022). Highly transparent Contacts to SixGe1-x Nanowires embedded in Metal-Semiconductor-Metal Heterostructures. In Nanowire Week 2022 (p. 69). http://hdl.handle.net/20.500.12708/77709 ( reposiTUm)

Sistani, M., Böckle, R., Luong, M. A., den Hertog, M., Lugstein, A., & Weber, W. M. (2022). Programmable negative differential Resistance in Ge Nanowire Transistors. In Nanowire Week 2022 (p. 64). http://hdl.handle.net/20.500.12708/77710 ( reposiTUm)

Böckle, R., Sistani, M., Bartmann, M. G., Lugstein, A., & Weber, W. M. (2022). Bias-Switchable Photoconductance in a Nanoscale Ge Photodetector Operated in the Negative Differential Resistance Regime. In Nanowire Week 2022. Nanowire Week, Chamonix, France. http://hdl.handle.net/20.500.12708/77711 ( reposiTUm)

Böckle, R., Sistani, M., Sadre-Momtaz, Z., den Hertog, M., Lugstein, A., Weber, W. M., & Pogany, D. (2022). Low-frequency Noise in Room-temperature quasi-ballistic Ge NW Transistors. In Nanowire Week 2022 (p. 20). http://hdl.handle.net/20.500.12708/77712 ( reposiTUm)

David, M., Dabrowska, A., Sistani, M., Hinkelmann, E., Doganlar, I. C., Detz, H., Weber, W. M., Lendl, B., Strasser, G., & Hinkov, B. (2022). Octave-spanning long-range plasmonic waveguide based on semiconductor-loading for mid-infrared monolithic sensors. In Novel In-Plane Semiconductor Lasers XXI. SPIE Photonics West 2022 (SPIE OPTO), San Francisco, United States of America (the). https://doi.org/10.1117/12.2610311 ( reposiTUm)

Barth, S., Seifner, M. S., & Sistani, M. (2022). Metastable Ge-based Nanowire Materials. In Nanowire Week 2022 (p. 68). http://hdl.handle.net/20.500.12708/77719 ( reposiTUm)

Sistani, M., Wind, L., Böckle, R., Smoliner, J., Weber, W. M., Vukŭsić, L., Aberl, J., Brehm, M., & Schweizer, P. (2022). Composition Dependent Electrical Transport in Si1−xGex Nanosheets with Monolithic Single-Elementary Al Contacts. In E-MRS Fall Meeting 2022. European Material Research Society (E-MRS) Fall Meeting 2022, Warsaw, Poland. http://hdl.handle.net/20.500.12708/139597 ( reposiTUm)

David, M., Dabrowska, A., Sistani, M., Hinkelmann, E., Doganlar, I. C., Schwarz, B., Detz, H., Weber, W. M., Lendl, B., Strasser, G., & Hinkov, B. (2021). Low loss dielectric loaded plasmonic waveguides for sensing applications above nine microns. In 2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). CLEO/Europe EQEC 2021, Virtual Conference, Unknown. https://doi.org/10.1109/cleo/europe-eqec52157.2021.9542741 ( reposiTUm)

Sistani, M., Lugstein, A., Eysin, K., Bartmann, M. G., Böckle, R., & Weber, W. M. (2021). Gate‐Tunable Negative Differential Resistance in Next‐Generation Ge Nanodevices and their Performance Metrics. In Euromat 2021 -European Congress And Exhibition On Advanced Materials And Processes. European Congress and Exhibition on Advanced Materials and Processes (EUROMAT), VIRTUAL, Austria. http://hdl.handle.net/20.500.12708/77450 ( reposiTUm)

Böckle, R., Lugstein, A., Rellinghaus, B., Lipovec, B., Pohl, D., Sistani, M., & Weber, W. M. (2021). A Top‐Down Platform Enabling Ge Based Reconfigurable Transistors. In European Congress And Exhibition On Advanced Materials And Processes - Euromat 2021. European Congress and Exhibition on Advanced Materials and Processes (EUROMAT), VIRTUAL, Austria. http://hdl.handle.net/20.500.12708/77449 ( reposiTUm)

Song, Z., Sistani, M., Wind, L., & Lugstein, A. (2021). CMOS-compatible Nanometre-Scale Germanium Photodetector with Tunable-Polarity Sensitivity. In Euromat 2021 (p. 1). http://hdl.handle.net/20.500.12708/77471 ( reposiTUm)

Doganlar, I. C., David, M., Sistani, M., Nazzari, D., Detz, H., Lugstein, A., Weber, W. M., Strasser, G., & Hinkov, B. (2021). Material Analysis for Mid-IR Dielectric Loaded Plasmonic Waveguides and Their Application in Chemical Sensing. In Gemeinsame Jahrestagung in Innsbruck (p. 54). http://hdl.handle.net/20.500.12708/77459 ( reposiTUm)

David, M., Dabrowska, A., Sistani, M., Hinkelmann, E., Doganlar, I. C., Detz, H., Weber, W. M., Lendl, B., Strasser, G., & Hinkov, B. (2021). LWIR dielectric-loaded surface-plasmon-polariton waveguide for optical sensing. In 15th International Conference on Mid-Infrared: Optoelectronic Materials and Devices (MIOMD) (p. 1). http://hdl.handle.net/20.500.12708/77474 ( reposiTUm)

David, M., Dabrowska, A., Sistani, M., Doganlar, I. C., Schwarz, B., Detz, H., Weber, W. M., Lendl, B., Strasser, G., Hinkov, B., & Hinkelmann, E. (2021). Low loss dielectric loaded plasmonic waveguides for sensing applications above nine microns. In Proceedings of the Compound Semiconductor Week (CSW 2021). Compound Semiconductor Week (CSW) 2021, Unknown. http://hdl.handle.net/20.500.12708/77378 ( reposiTUm)

David, M., Dabrowska, A., Sistani, M., Hinkelmann, E., Doganlar, I. C., Schwarz, B., Detz, H., Weber, W. M., Lendl, B., Strasser, G., & Hinkov, B. (2021). Towards long-wave infrared lab-on-chip sensors using plasmonic and quantum cascade technology. In 11th International Conference on advanced vibrational spectroscopy (p. 31). http://hdl.handle.net/20.500.12708/77673 ( reposiTUm)

Delaforce, J., Sistani, M., Kramer, R., Hertog, M., Roch, N., Naud, C., Lugstein, A., & Buisson, O. (2021). Superconducting Proximity Effect in Ultra-Scaled Pure Ge Quantum Dots. In APS March Meeting (p. 1). http://hdl.handle.net/20.500.12708/77434 ( reposiTUm)

Lancaster, S., Schinnerl, M., Andrews, A. M., Sistani, M., Lugstein, A., Schrenk, W., Strasser, G., & Detz, H. (2019). Optically active nanowires nucleated via a novel focused ion beam implantation method. In Gemeinsame Jahrestagung in Zürich ÖPS, SPS (p. 42). http://hdl.handle.net/20.500.12708/76711 ( reposiTUm)

Sistani, M., Bartmann, M. G., Staudinger, P., Brunbauer, F., Kral, S., Luong, M. A., den Hertog, M., Robin, E., & Bertagnolli, E. (2018). Carrier Transport and Photonics in Monolithic Al-Ge-Al Nanowire Heterostructures. In Web Tagungsband EMRS Spring 2018 (p. 1). http://hdl.handle.net/20.500.12708/76438 ( reposiTUm)

Seifner, M. S., Sistani, M., Pertl, P., Porrati, F., Zivadinovic, I., Lugstein, A., Huth, M., & Barth, S. C. (2018). Growth and Characterization of Hyperdoped Germanium Nanorods and Nanowires. In 2018 MRS Fall Meeting (p. 1). http://hdl.handle.net/20.500.12708/76439 ( reposiTUm)

Bartmann, M. G., Sistani, M., Glassner, S., Steinbauer, B., Bertagnolli, E., & Smoliner, J. (2018). Strain Induced Band-Gap Modification of Ge nanowires. In Nanowire Week 2018. Nanowire Week 2018, Hamilton, Canada. http://hdl.handle.net/20.500.12708/76436 ( reposiTUm)

Sistani, M., Staudinger, P., Bertagnolli, E., & Lugstein, A. (2018). Ultra-scaled Quantum Ballistic Ge Nanowire Photodetector. In Nanowire Week 2018. Nanowire Week 2018, Hamilton, Canada. http://hdl.handle.net/20.500.12708/76432 ( reposiTUm)

Shawrav, M. M., Taus, P., Wanzenböck, H. D., Schinnerl, M., Sistani, M., Lugstein, A., Stöger-Pollach, M., Schwarz, S., Steiger-Thirsfeld, A., & Bertagnolli, E. (2016). Highly conductive & (almost) pure gold deposition without post treatment - A fairy tale has come true? In FEBIP 2016 (p. 106). http://hdl.handle.net/20.500.12708/75401 ( reposiTUm)

Fuchsberger, A., Eysin, K., Wind, L., Nazzari, D., Navarrete Enrique Prado, Aberl, J., Brehm, M., Weber, W. M., & Sistani, M. (2026, May 22). Enhancing Negative Differential Transconductance by Ultra-Thin Ge on SOI [Conference Presentation]. 12th joint EUROSOI Workshop and international conference on ultimate integration on silicon (EUROSOI-ULIS 2026), Granada, Spain. http://hdl.handle.net/20.500.12708/228465 ( reposiTUm)

Krajiczek, P., Fuchsberger, A., Knaller, N. T., Wind, L., Nazzari, D., Vogl, L. M., Schweizer, P., Prado Navarrete, E., Aberl, J., Brehm, M., Weber, W. M., & Sistani, M. (2026, June). An Ultra-Thin Body SiGeSn Transistor for Cryogenic Electronics [Poster Presentation]. MESS26 - Microelectronic Systems Symposium, Wien, Austria. ( reposiTUm)

Maraspini, F., David, M., Sistani, M., Schwingshandl, F., Buisson, O., Naud, C., Weber, W. M., & Lugstein, A. (2026, February). Scalable Al-Ge Hybrid Heterostructures for Next- Generation Superconducting Quantum Devices [Poster Presentation]. International Workshop on Superconductor Semiconductor Hybrids, Villard-de-Lans, France. ( reposiTUm)

Sistani, M., Fuchsberger, A., Behrle, R., Wind, L., Nazzari, D., Aberl, J., Prado Navarrete, E., Brehm, M., Vogl, L., Schweizer, P., Lellig, S., Maeder Xavier, & Weber, W. M. (2025, February 14). Multifunctional Si and Ge based  Schottky Barrier Field-Effect Transistors [Conference Presentation]. 23rd International Winterschool on New Developments in Solid State Physics, Mauterndorf, Austria. http://hdl.handle.net/20.500.12708/213234 ( reposiTUm)

Wahler, V., Nazzari, D., Wind, L., Sistani, M., Vogl, L., Schweizer, P., & Weber, W. M. (2025, September 16). HZO-Enhanced Schottky Barrier FETs for Neuromorphic Computing [Conference Presentation]. 2025 E-MRS Fall Meeting, Warsaw, Poland. ( reposiTUm)

Wahler, V., Nazzari, D., Wind, L., Sistani, M., & Weber, W. M. (2025, November 18). Ferroelectric Schottky Barrier FETs with Floating Gates for Neuromorphic Applications [Conference Presentation]. Symposium on Schottky Barrier MOS Devices 2025, Wien, Austria. ( reposiTUm)

Nazzari, D., Wind, L., Wahler, V., Rossi Chiara, Esseni, D., Sistani, M., Fuchsberger, A., & Weber, W. M. (2025, March 12). Local Ferroelectric Gating in Schottky-Junction Transistors [Conference Presentation]. Novel High-k Application Workshop 2025, Dresden, Germany. ( reposiTUm)

Nazzari, D., Wind, L., Wahler, V., Sistani, M., Rossi C, Esseni, D., & Weber, W. M. (2025, November 18). Non-Volatile Ferroelectric RFETs [Conference Presentation]. Symposium on Schottky Barrier MOS Devices 2025, Wien, Austria. ( reposiTUm)

David, M., Sistani, M., Maraspini, F., & Wind, L. (2025, August 14). Engineering Nanowires: From Fundamental Physics to Scalable Quantum Technologies [Conference Presentation]. Summer School 25, Wien, Austria. ( reposiTUm)

Nazzari, D., Wind, L., Sistani, M., Mayr, D., Kim, K., Wahler, V., & Weber, W. M. (2025, February 12). Ferroelectrically Enhanced Reconfigurable Transistors: From Selective Charge Carrier Control to Neuromorphic Applications [Presentation]. 23rd International Winterschool on New Developments in Solid State Physics, Mauterndorf, Austria. http://hdl.handle.net/20.500.12708/213239 ( reposiTUm)

Nazzari, D., Rossi C., Wahler, V., Wind, L., Sistani, M., Esseni, D., & Weber, W. M. (2025, October 9). Non-Volatile Reconfigurable Transistor via Ferroelectric Modulation: Fabrication Strategy and TCAD Simulations [Conference Presentation]. International Semiconductor Conference - CAS 2025, Sinaia, Romania. http://hdl.handle.net/20.500.12708/221810 ( reposiTUm)

Sistani, M., Fuchsberger, A., Wind, L., Knaller, N., Vogl, L., Schweizer, P., Prado Navarrete, E., Aberl, J., Brehm, M., & Weber, W. M. (2025, September 15). Temperature-dependent Electronic Transport in Multi-Gate Ge/Sn and SiGeSn Schottky Barrier Field Effect Transistors [Conference Presentation]. 2025 MRS Fall Meeting, Warsaw, Poland. http://hdl.handle.net/20.500.12708/219658 ( reposiTUm)

Fuchsberger, A., Dobler Alexandra, Popp, D., Wind, L., Kramer Andreas, Kulenkampff, J., Reuter Maximilian, Nazzari, D., Galderisi Giulio, Prado-Navarrete E, Aberl, J., Vogl, L., Schweizer, P., Trommer, J., Brehm, M., Hofmann Klaus, Sistani, M., & Weber, W. M. (2025, November 18). Ge-on-SOI RFETs: Performance and Analog Circuits [Conference Presentation]. Symposium on Schottky Barrier MOS Devices 2025, Wien, Austria. http://hdl.handle.net/20.500.12708/221537 ( reposiTUm)

Sistani, M., Fuchsberger, A., Stipkovich Maximilian, Knaller Nikolas, Wind, L., Wahler, V., Nazzari, D., Aberl, J., Prado-Navarrete E, Brehm, M., Pacheco-Sanchez Anibal, Vogl, L., Schweizer, P., & Weber, W. M. (2025, November 17). Multi-functional Si- and Ge-based SBFETs [Conference Presentation]. Symposium on Schottky Barrier MOS Devices 2025, Wien, Austria. http://hdl.handle.net/20.500.12708/221375 ( reposiTUm)

Wind, L., Fuchsberger, A., Nazzari, D., Aberl, J., Prado-Navarrete E, Brehm, M., Vogl, L., Schweizer, P., Sistani, M., & Weber, W. M. (2025, November 18). Si-to-SiGe Heterostructure Transistors for Reconfigurable Circuits [Conference Presentation]. Symposium on Schottky Barrier MOS Devices 2025, Wien, Austria. http://hdl.handle.net/20.500.12708/221518 ( reposiTUm)

Weber, W. M., Wind, L., Fuchsberger, A., Behrle, R., Wahler, V., Prado-Navarrete, E., Brehm, M., Nazzari, D., & Sistani, M. (2025, September 17). Reconfigurable Si, SixGe1-x and Ge nano-sheet Transistors: from Charge Selection to Ferroelectrically Enhanced Neuromorphic Functionality [Conference Presentation]. The 2025 Fall Meeting of the European Materials Research Society (E-MRS), Warschau, Poland. http://hdl.handle.net/20.500.12708/225932 ( reposiTUm)

Prado-Navarrete E, Aberl, J., Marböck J, Salomon, A., Haya Enriquez D, Wilfingseder C, Fromherz, T., Wind, L., Fuchsberger, A., Sistani, M., Weber, W. M., & Brehm, M. (2025, September 15). Low temperature epitaxy of supersaturated SiGe and Ge layers on Si and SOI [Conference Presentation]. The 2025 Fall Meeting of the European Materials Research Society (E-MRS), Warsaw, Poland. http://hdl.handle.net/20.500.12708/219724 ( reposiTUm)

Fuchsberger, A., Wind, L., Pacheco-Sanchez A., Prado-Navarrete E, Aberl, J., Brehm, M., Schweizer, P., Vogl L, Sistani, M., & Weber, W. M. (2025, May). A Schottky Barrier Field-Effect Transistor Platform with Variable Ge Content on SOI [Conference Presentation]. 11th Joint EuroSOI Workshop and International Conference on Ultimate Integration of Silicon (EuroSOI-ULIS 2025), Warsaw, Poland. http://hdl.handle.net/20.500.12708/217191 ( reposiTUm)

Fuchsberger, A., Sistani, M., Eysin, K., Wind, L., Prado-Navarrete E, Aberl, J., Brehm, M., Ratschinski I, Hiller D, & Weber, W. M. (2025, September 16). Modulation-Acceptor-Doped SiGe Schottky Barrier Field-Effect Transistors [Conference Presentation]. The 2025 Fall Meeting of the European Materials Research Society (E-MRS), Warsaw, Poland. http://hdl.handle.net/20.500.12708/219804 ( reposiTUm)

Weber, W. M., Wind, L., Fuchsberger, A., Behrle, R., Wahler, V., Navarrete Enrique Prado, Brehm, M., Nazzari, D., & Sistani, M. (2025, October 8). Silicon-Germanium and Germanium nano-sheet FETs: from reconfigurable functionality to ferroelectrically enhanced neuromorphic operability [Conference Presentation]. IEEE Latin American Electron Devices Conference (LAEDC 2025), Jalisco, Mexico. http://hdl.handle.net/20.500.12708/225937 ( reposiTUm)

Dobler Alexandra, Fuchsberger, A., Wind, L., Nazzari, D., Aberl, J., Brehm, M., Vogl, L., Schweizer, P., Sistani, M., & Weber, W. M. (2024, June). Adaptive Analog Circuits based on Reconfigurable Ge Transistors [Poster Presentation]. MESS24 - Microelectronic Systems Symposium, Wien, Austria. http://hdl.handle.net/20.500.12708/207571 ( reposiTUm)

Maraspini, F., David, M., Sistani, M., Wind, L., Schwingshandl, F., Buisson, O., Naud, C., Weber, W. M., & Lugstein, A. (2024, September 26). Monolithic Superconductor-Semiconductor Quantum Circuits [Poster Presentation]. 73rd Annual Meeting of the Austrian Physical Society, Linz, Austria. http://hdl.handle.net/20.500.12708/204283 ( reposiTUm)

Wahler, V., Wind, L., Preiß S, Nazzari, D., Bažíková, M., Aberl, J., Navarrete, Brehm, M., Vogl, L., Sistani, M., & Weber, W. M. (2024, June). Highly Transparent Al Contacts to Si/Ge1-xSnx/Si Heterostructures on SOI [Poster Presentation]. MESS24 - Microelectronic Systems Symposium, Wien, Austria. http://hdl.handle.net/20.500.12708/207573 ( reposiTUm)

Wind, L., Preiß, S., Nazzari, D., Bažíková, M., Aberl, J., Prado Navarrete, E., Brehm, M., Vogl, L., Sistani, M., & Weber, W. M. (2024, May 15). Si/Ge₁₋ₓSnₓ/Si transistors with highly transparent Al contacts [Conference Presentation]. 10th Joint EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2024), Athen, Greece. http://hdl.handle.net/20.500.12708/199907 ( reposiTUm)

Behrle, R., Wind, L., Sistani, M., Sadre‐Momtaz, Z., den Hertog, M. I., Murphey, C. G. E., Cahoon, J. F., & Weber, W. M. (2023, May 30). Reconfigurable Silicon Transistors with Single-Elementary Metal Contacts for Complementary and Combinational Logic [Conference Presentation]. European Materials Research Society (E-MRS) Spring Meeting 2023, Strassburg, France. http://hdl.handle.net/20.500.12708/187184 ( reposiTUm)

Sistani, M., Behrle, R., Barth, S., Murphey, C. G. E., Cahoon, J., den Hertog, M. I., Sadre‐Momtaz, Z., & Weber, W. M. (2023, May 30). Electrical Transport in Monolithic Al-Si/Al-Ge Heterojunction based Nanowire Schottky Barrier Field-Effect Transistors [Conference Presentation]. European Materials Research Society (E-MRS) Spring Meeting 2023, Strasbourg, France. http://hdl.handle.net/20.500.12708/187165 ( reposiTUm)

Behrle, R., Sistani, M., Barth S., Murphey, C. G. E., Cahoon, J. F., Den Hertog, M., Momtaz, Z. S., & Weber, W. M. (2023, September 6). Electrical Transport in Monolithic Al-Si/Al-Ge Heterojunction based Nanowire Schottky Barrier Field-Effect Transistors [Conference Presentation]. Materials Science and Technology in Europe : FEMS EUROMAT 2023, Frankfurt am Main, Germany. http://hdl.handle.net/20.500.12708/188298 ( reposiTUm)

Wind, L., Sistani, M., Fuchsberger, A., Behrle, R., Nazzari, D., Aberl, J., Navarrete, E., Vukŭsić, L., Brehm, M., Schweizer, P., Vogl, L., Maeder, X., & Weber, W. M. (2023, May 29). Reconfigurable Field-Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts [Conference Presentation]. European Materials Research Society (E-MRS) Spring Meeting 2023, Strasbourg, France. http://hdl.handle.net/20.500.12708/187183 ( reposiTUm)

Nazzari, D., Sistani, M., Behrle, R., Wind, L., Lugstein, A., & Weber, W. M. (2022, September 13). Interface engineering of Ge nanosheets: evaluation of different high-k materials for improving device performances [Conference Presentation]. High k Workshop 2022, Dresden, Germany. ( reposiTUm)

Demirkiran Özgür, Wind, L., Sistani, M., Böckle, R., & Weber, W. M. (2022, June 1). Reconfigurable Transistors Based on Top-Down Fabricated Al-Si Heterostructures [Poster Presentation]. Microelectronic Systems Symposium (MESS22), Wien, Austria. ( reposiTUm)

Sistani, M., Behrle, R., Weber, W. M., Luong, M. A., & den Hertog, M. (2022, September 19). Gate-Tunable Negative Differential Resistance Enabling the Functional Diversification of Ge-Based Nanoelectronic Devices [Conference Presentation]. European Material Research Society (E-MRS) Fall Meeting 2022, Warsaw, Poland. ( reposiTUm)

David, M., Sistani, M., Frank, F., Doganlar, I. C., Nazzari, D., Dabrowska, A., Marschick, G., Arigliani, E., Detz, H., Lendl, B., Weber, W. M., Strasser, G., & Hinkov, B. (2022, July 5). Surface-enhancement of ultra-broadband mid-IR plasmonic waveguides  for liquid spectroscopy applications [Conference Presentation]. International School on Plasmonics and Nano-Optics, Turin, Italy. http://hdl.handle.net/20.500.12708/78082 ( reposiTUm)

David, M., Doganlar, I. C., Nazzari, D., Sistani, M., Detz, H., Weber, W. M., Strasser, G., & Hinkov, B. (2022, September 0). Functionalization of mid-IR plasmonic waveguides for novel lab-on-a-chip biosensors [Conference Presentation]. 71. Jahrestagung der Österreichischen Physikalischen Gesellschaft (ÖPG) 2022, Leoben, Austria. ( reposiTUm)

Sistani, M., Behrle, R., Luong, M. A., den Hertog, M. I., Lugstein, A., & Weber, W. M. (2022, September 11). Programmable negative differential Resistance in Ge Nanowire Transistors [Conference Presentation]. 19th Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST-19), Mondsee, Austria. http://hdl.handle.net/20.500.12708/153022 ( reposiTUm)

David, M., Arigliani, E., Dabrowska, A., Lardschneider, A., Sistani, M., Nazzari, D., Disnan, D., Doganlar, I. C., Hoang, H. T., Marschick, G., Detz, H., Schmid, U., Lendl, B., Weber, W. M., Strasser, G., & Hinkov, B. (2022). Low Loss Mid-infrared Plasmonic Waveguides: Extending the Limits of Noble Metals [Poster Presentation]. 2022 MRS Fall Meeting & Exhibit, Boston, United States of America (the). http://hdl.handle.net/20.500.12708/153225 ( reposiTUm)

Sistani, M., Wind, L., Behrle, R., Smoliner, J., Weber, W. M., Vukusic, L., Aberl, J., Brehm, M., & Schweizer, P. (2022, September 20). Composition Dependent Electrical Transport in SiGe Nanosheets with Monolithic Single-Elementary Al Contacts [Poster Presentation]. European Material Research Society (E-MRS) Fall Meeting 2022, Warsaw, Poland. http://hdl.handle.net/20.500.12708/139598 ( reposiTUm)

Wind, L., Sistani, M., Demirkiran Özgür, Böckle, R., Fuchsberger, A., Schweizer, P., Maeder Xavier, Michler, J., & Weber, W. M. (2022, October 6). Metal-Semiconductor based  Reconfigurable Electronics [Presentation]. 21. nanoNET-Austria Meeting, Lustenau, Austria. http://hdl.handle.net/20.500.12708/113037 ( reposiTUm)

Behrle, R., Sistani, M., Bažíková, M., Wind, L., Sadre-Momtaz, Z., den Hertog, M. I., Murphey, C. G. E., Cahoon, J. F., & Weber, W. M. (2022, September 7). Reconfigurable Complementary and Combinational Logic based on Monolithic and Single-Crystalline Al-Si Het­erostructures [Conference Presentation]. DPG-Tagung der Sektion Kondensierte Materie (SKM) 2022, Regensburg, Germany. http://hdl.handle.net/20.500.12708/153109 ( reposiTUm)

Nazzari, D., Solfronk, O., Mustajbasic Melisa, Sistani, M., & Weber, W. M. (2022, September). Fabrication and evaluation of different passivation layers for the Ge-Insulator interface using Plasma-Enhanced ALD [Conference Presentation]. European Material Research Society (E-MRS) Fall Meeting 2022, Warsaw, Poland. http://hdl.handle.net/20.500.12708/139601 ( reposiTUm)

Nazzari, D., Solfronk, O., Sistani, M., & Weber, W. M. (2022, September 13). Fabrication and evaluation of different passivation layers for the Ge-Insulator interface using Plasma-Enhanced ALD [Poster Presentation]. 19th Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST-19), Mondsee, Austria. http://hdl.handle.net/20.500.12708/152446 ( reposiTUm)

Sistani, M., Delaforce, J., Naud, C., Kramer, R., Luong, M. A., Hertog, M., Weber, W. M., Buisson, O., & Lugstein, A. (2021). A Ge quantum dot monolithically embedded in a metal-semiconductor heterostructure: from single-hole transport to proximity induced superconductivity. Online Conference - JMC17, Unknown. http://hdl.handle.net/20.500.12708/91350 ( reposiTUm)

Böckle, R., Sistani, M., & Weber, W. M. (2021). Ge-based Reconfigurable Transistors: A Platform Enabling Negative Differential Resistance. Dresden Microelectronics Academy (DMA), Dresden, Germany. http://hdl.handle.net/20.500.12708/91352 ( reposiTUm)

Sistani, M., Delaforce, J., Kramer, R., Roch, N., Luong, M. A., Hertog, M., Robin, E., Smoliner, J., Yao, J., Lieber, C. M., Naud, C., Lugstein, A., & Buisson, O. (2019). Transport in ultra-scaled Ge quantum dots. MRS Boston, Boston, United States of America (the). http://hdl.handle.net/20.500.12708/91247 ( reposiTUm)

Sistani, M., Bartmann, M. G., Keshmiri, H., Seifner, M. S., Barth, S., Luong, M. A., den Hertog, M., Smoliner, J., Bertagnolli, E., & Lugstein, A. (2019). Monolithic metal-semiconductor nanowire heterostructures for electrical and optical applications. 10th International Conference on Materials for Advanced Technologies (ICMAT 2019), Singapore, Singapore. http://hdl.handle.net/20.500.12708/91262 ( reposiTUm)

Sistani, M., Bartmann, M. G., Keshmiri, H., & Lugstein, A. (2019). Stimulated Raman Scattering in Ge Nanowires. Nanowire Week, Chamonix, France. http://hdl.handle.net/20.500.12708/91205 ( reposiTUm)

Lugstein, A., Sistani, M., Luong, M. A., den Hertog, M., Robin, E., Sebastian, K., Staudinger, P., Benter, S., Bartmann, M. G., & Bertagnolli, E. (2018). Synthesis and applications of monolithic metal-semiconductor nanowire heterostructures. Nanowire Week, Chamonix, France. http://hdl.handle.net/20.500.12708/91126 ( reposiTUm)

Lugstein, A., Sistani, M., Luong, M. A., den Hertog, M., Robin, E., Krall, S., Staudinger, P., Benter, S., Bartmann, M. G., & Bertagnolli, E. (2018). Monolithic metal-semiconductor nanowire heterostructures for electrical and optical applications. Interphotonics, Antalya, Turkey. http://hdl.handle.net/20.500.12708/91127 ( reposiTUm)

Sistani, M., Staudinger, P., Greil, J. M., Holzbauer, M., Detz, H., & Bertagnolli, E. (2017). Room Temperature Quantum Ballistic Transport in Monolithic Ultrascaled Al-Ge-Al Nanowire Heterostructures. Nanowire Week 2017, Lund, Sweden. http://hdl.handle.net/20.500.12708/91019 ( reposiTUm)

Lugstein, A., Sistani, M., Staudinger, P., Greil, J. M., Holzbauer, M., Detz, H., & Bertagnolli, E. (2017). Room Temperature Quantum Ballistic Transport in Monolithic Al-Ge-Al Nanowire Heterostructures. International Conference on Advanced Materials (IUMRS-ICAM), Kyoto, Japan. http://hdl.handle.net/20.500.12708/91018 ( reposiTUm)

Sistani, M., Staudinger, P., Greil, J. M., Holzbauer, M., Detz, H., Bertagnolli, E., & Lugstein, A. (2017). Room Temperature Quantum Ballistic Transport in Monolithic Al-Ge-Al Nanowire Heterostructures. Collaborative Conference on Materials Research, Jeju island, Korea (the Republic of). http://hdl.handle.net/20.500.12708/91017 ( reposiTUm)

Sistani, M. (2019). Transport in ultra-scaled Ge quantum dots embedded in Al-Ge-Al nanowire heterostructures [Dissertation, Technische Universität Wien]. reposiTUm. https://doi.org/10.34726/hss.2019.40484 ( reposiTUm)

Sistani, M. (2016). Ballistic transport phenomena in Al-Ge-Al nanowire heterostructures [Diploma Thesis, Technische Universität Wien]. reposiTUm. https://doi.org/10.34726/hss.2016.38922 ( reposiTUm)