Butej, B., Wieland, D., Pogany, D., Gharib, A., Pobegen, G., Ostermaier, C., & Koller, C. (2024). Evidence‐based understanding of lateral hole transport during OFF‐state stress completing dynamic GaN‐on‐Si buffer charging model. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Article 2400089. https://doi.org/10.1002/pssa.202400089 ( reposiTUm)

Stabentheiner, M., Diehle, P., Hübner, S., Lejoyeux, M., Altmann, F., Neumann, R., Taylor, A. A., Pogany, D., & Ostermaier, C. (2024). On the insignificance of dislocations in reverse bias degradation of lateral GaN-on-Si devices. Journal of Applied Physics, 135(2), Article 025703. https://doi.org/10.1063/5.0178743 ( reposiTUm)

Krainer, R., Jomar, H., Rockermeier, H., Holland, S., Ritter, H.-M., Kumar, V., & Pogany, D. (2024). I – V Hysteresis in ESD Protection SCR Due to Jumping Between Bulk and Surface Current Paths. IEEE Transactions on Electron Devices, 71(12), 7281–7286. https://doi.org/10.1109/TED.2024.3488682 ( reposiTUm)

Behrle, R., Sistani, M., Lugstein, A., Sadre Momtaz, Z., den Hertog, M. I., Pogany, D., & Weber, W. M. (2023). Low-frequency noise in quasi-ballistic monolithic Al–Ge–Al nanowire field effect transistors. Applied Physics Letters, 122(24), Article 243504. https://doi.org/10.1063/5.0147208 ( reposiTUm)

Stabentheiner, M., Diehle, P., Altmann, F., Hübner, S., Lejoyeux, M., Taylor, A. A., Wieland, D., Pogany, D., & Ostermaier, C. (2023). Test concept for a direct correlation between dislocations and the intrinsic degradation of lateral PIN diodes in GaN-on-Si under reverse bias. Microelectronics Reliability, 150, Article 115071. https://doi.org/10.1016/j.microrel.2023.115071 ( reposiTUm)

Butej, B., Padovan, V., Pogany, D., Pobegen, G., Ostermaier, C., & Koller, C. (2022). Method to Distinguish Between Buffer and Surface Trapping in Stressed Normally-ON GaN GITs Using the Gate-Voltage Dependence of Recovery Time Constants. IEEE Transactions on Electron Devices, 69(6), 3087–3093. https://doi.org/10.1109/ted.2022.3170293 ( reposiTUm)

Karaca, H., Holland, S., Ritter, H.-M., Kumar, V., Notermans, G., & Pogany, D. (2021). 3-D TCAD Methodology for Simulating Double-Hysteresis Filamentary IV Behavior and Holding Current in ESD Protection SCRs. IEEE Transactions on Electron Devices, 68(9), 4214–4222. https://doi.org/10.1109/ted.2021.3100301 ( reposiTUm)

Koller, C., Lymperakis, L., Pogany, D., Pobegen, G., & Ostermaier, C. (2021). Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination. Journal of Applied Physics, 130(18), 185702. https://doi.org/10.1063/5.0060912 ( reposiTUm)

Karaca, H., Fleury, C., Holland, S., Kumar, V., Ritter, H.-M., Notermans, G., & Pogany, D. (2020). Simultaneous and Sequential Triggering in Multi-Finger Floating-Base SCRs Depending on TLP Pulse Rise Time. IEEE Transactions on Device and Materials Reliability, 20(4), 632–640. https://doi.org/10.1109/tdmr.2020.3033618 ( reposiTUm)

Lambert, N., Taylor, A., Hubík, P., Bulíř, J., More-Chevalier, J., Karaca, H., Fleury, C., Voves, J., Šobáň, Z., Pogany, D., & Mortet, V. (2020). Modeling current transport in boron-doped diamond at high electric fields including self-heating effect. Diamond and Related Materials, 109(108003), 108003. https://doi.org/10.1016/j.diamond.2020.108003 ( reposiTUm)

Koller, C., Pobegen, G., Ostermaier, C., Hecke, G., Neumann, R., Holzbauer, M., Strasser, G., & Pogany, D. (2019). Trap-Related Breakdown and Filamentary Conduction in Carbon Doped GaN. Physica Status Solidi (b), 256(6), 1800527. https://doi.org/10.1002/pssb.201800527 ( reposiTUm)

Fleury, C., Simbürger, W., & Pogany, D. (2019). Effect of TLP rise time on ESD failure modes of collector-base junction of SiGe heterojunction bipolar transistors. Microelectronics Reliability, 100–101(113331). https://doi.org/10.1016/j.microrel.2019.06.023 ( reposiTUm)

Padovan, V., Koller, C., Pobegen, G., Ostermaier, C., & Pogany, D. (2019). Stress and Recovery Dynamics of Drain Current in GaN HD-GITs Submitted to DC Semi-ON stress. Microelectronics Reliability, 100–101, 113482. https://doi.org/10.1016/j.microrel.2019.113482 ( reposiTUm)

Cecchini, R., Selmo, S., Wiemer, C., Fanciulli, M., Rotunno, E., Lazzarini, L., Rigato, M., Pogany, D., Lugstein, A., & Longo, M. (2019). In-doped Sb nanowires grown by MOCVD for high speed phase change memories. Micro and Nano Engineering, 2, 117–121. https://doi.org/10.1016/j.mne.2018.11.002 ( reposiTUm)

Notermans, G., Ritter, H.-M., Holland, S., & Pogany, D. (2019). Dynamic Voltage Overshoot During Triggering on an SCR-Type ESD Protection. IEEE Transactions on Device and Materials Reliability, 19(4), 583–590. https://doi.org/10.1109/tdmr.2019.2952713 ( reposiTUm)

Ostermaier, C., Lagger, P., Reiner, M., & Pogany, D. (2018). Review of bias-temperature instabilities at the III-N/dielectric interface. Microelectronics Reliability, 82, 62–83. https://doi.org/10.1016/j.microrel.2017.12.039 ( reposiTUm)

Koller, C., Pobegen, G., Ostermaier, C., & Pogany, D. (2018). Effect of carbon doping on charging/discharging dynamics and leakage behavior of carbon-doped GaN. IEEE Transactions on Electron Devices, 65(12), 5314–5321. https://doi.org/10.1109/ted.2018.2872552 ( reposiTUm)

Rigato, M., Fleury, C., Schwarz, B., Mergens, M., Bychikhin, S., Simburger, W., & Pogany, D. (2018). Analysis of ESD Beheviour of Stacked nMOSFET RF Switches in Bulk Technology. IEEE Transactions on Electron Devices, 65(3), 829–837. https://doi.org/10.1109/ted.2018.2789941 ( reposiTUm)

Koller, C., Pobegen, G., Ostermaier, C., Huber, M., & Pogany, D. (2017). The interplay of blocking properties with charge and potential redistribution in thin carbon-doped GaN on n-doped GaN layers. Applied Physics Letters, 111(3), 032106. https://doi.org/10.1063/1.4993571 ( reposiTUm)

Fleury, C., Notermans, G., Ritter, H.-M., & Pogany, D. (2017). TIM, EMMI and 3D TCAD analysis of discrete-technology SCRs. Microelectronics Reliability, 76–77, 698–702. https://doi.org/10.1016/j.microrel.2017.06.070 ( reposiTUm)

Kuzmik, J., Fleury, C., Adikimenakis, A., Gregušová, D., Ťapajna, M., Dobročka, E., Haščík, Š., Kučera, M., Kúdela, R., Androulidaki, M., Pogany, D., & Georgakilas, A. (2017). Current conduction mechanism and electrical break-down in InN grown on GaN. Applied Physics Letters, 110(23), 232103. https://doi.org/10.1063/1.4985128 ( reposiTUm)

Ostermaier, C., Lagger, P., Prechtl, G., Grill, A., Grasser, T., & Pogany, D. (2017). Dynamics of Carrier Transport via AlGaN Barrier in AlGaN/GaN MIS-HEMTs. Applied Physics Letters, 110(17), 173502. https://doi.org/10.1063/1.4982231 ( reposiTUm)

Meneghini, M., Hilt, O., Fleury, C., Silvestri, R., Capriotti, M., Strasser, G., Pogany, D., Bahat-Treidel, E., Brunner, F., Knauer, A., Würfl, J., Rossetto, I., Zanoni, E., Meneghesso, G., & Dalcanale, S. (2016). Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate-stress and ESD failure. Microelectronics Reliability, 58, 177–184. https://doi.org/10.1016/j.microrel.2015.11.026 ( reposiTUm)

Capriotti, M., Bahat Treidel, E., Fleury, C., Bethge, O., Ostermaier, C., Rigato, M., Lancaster, S., Brunner, F., Detz, H., Hilt, O., Würfl, J., Pogany, D., & Strasser, G. (2016). Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors. Solid-State Electronics, 125, 118–124. https://doi.org/10.1016/j.sse.2016.07.009 ( reposiTUm)

Selmo, S., Cecchini, R., Cecchi, S., Wiemer, C., Fanciulli, M., Rotunno, E., Lazzarini, L., Rigato, M., Pogany, D., Lugstein, A., & Longo, M. (2016). Low power phase change memory switching of ultra-thin In₃Sb1Te₂ nanowires. Applied Physics Letters, 109(21), Article 213103. https://doi.org/10.1063/1.4968510 ( reposiTUm)

Capriotti, M., Lagger, P., Fleury, C., Oposich, M., Bethge, O., Ostermaier, C., Strasser, G., & Pogany, D. (2015). Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states. Journal of Applied Physics, 117(2), 024506. https://doi.org/10.1063/1.4905945 ( reposiTUm)

Fleury, C., Capriotti, M., Rigato, M., Hilt, O., Würfl, J., Derluyn, J., Steinhauer, S., Köck, A., Strasser, G., & Pogany, D. (2015). High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications. Microelectronics Reliability, 55(9–10), 1687–1691. https://doi.org/10.1016/j.microrel.2015.06.010 ( reposiTUm)

Rigato, M., Fleury, C., Heer, M., Capriotti, M., Simbürger, W., & Pogany, D. (2015). ESD characterization of mulit-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique. Microelectronics Reliability, 55(9–10), 1471–1475. https://doi.org/10.1016/j.microrel.2015.06.019 ( reposiTUm)

Steinhauer, S., Köck, A., Gspan, C., Grogger, W., Vandamme, L. K. J., & Pogany, D. (2015). Low-frequency noise characterization of single CuO nanowire gas sensor devices. Applied Physics Letters, 107(12), 123112. https://doi.org/10.1063/1.4931706 ( reposiTUm)

Lagger, P., Steinschifter, P., Reiner, M., Stadtmüller, M., Denifl, G., Naumann, A., Müller, J., Wilde, L., Sundqvist, J., Pogany, D., & Ostermaier, C. (2014). Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress. Applied Physics Letters, 105(3), 033512. https://doi.org/10.1063/1.4891532 ( reposiTUm)

Kuzmík, J., Ťapajna, M., Válik, L., Molnar, M., Donoval, D., Fleury, C., Pogany, D., Strasser, G., Hilt, O., Brunner, F., & Würfl, J. (2014). Self-Heating in GaN Transistors Designed for High-Power Operation. IEEE Transactions on Electron Devices, 61(10), 3429–3434. https://doi.org/10.1109/ted.2014.2350516 ( reposiTUm)

Lagger, P., Reiner, M., Pogany, D., & Ostermaier, C. (2014). Comprehensive Study of the Complex Dynamics of Forward Bias-Induced Threshold Voltage Drifts in GaN Based MIS-HEMTs by Stress/Recovery Experiments. IEEE Transactions on Electron Devices, 61(4), 1022–1030. https://doi.org/10.1109/ted.2014.2303853 ( reposiTUm)

Capriotti, M., Alexewicz, A., Fleury, C., Gavagnin, M., Bethge, O., Visalli, D., Derluyn, J., Wanzenböck, H. D., Bertagnolli, E., Pogany, D., & Strasser, G. (2014). Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capability. Applied Physics Letters, 104(11), 113502. https://doi.org/10.1063/1.4868531 ( reposiTUm)

Lagger, P. W., Schiffmann, A., Pobegen, G., Pogany, D., & Ostermaier, C. (2013). Very Fast Dynamics of Threshold Voltage Drifts in GaN-Based MIS-HEMTs. IEEE Electron Device Letters, 34(9), 1112–1114. http://hdl.handle.net/20.500.12708/155268 ( reposiTUm)

Rossi, S., Alomari, M., Zhang, Y., Bychikhin, S., Pogany, D., Weaver, J. M. R., & Kohn, E. (2013). Thermal analysis of submicron nanocrystalline diamond films. Diamond and Related Materials, 40, 69–74. https://doi.org/10.1016/j.diamond.2013.10.004 ( reposiTUm)

Fleury, C., Zhytnytska, R., Bychikhin, S., Cappriotti, M., Hilt, O., Visalli, D., Meneghesso, G., Zanoni, E., Würfl, J., Derluyn, J., Strasser, G., & Pogany, D. (2013). Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications. Microelectronics Reliability, 53(9–11), 1444–1449. https://doi.org/10.1016/j.microrel.2013.07.117 ( reposiTUm)

Meneghini, M., Zanandrea, A., Rampazzo, F., Stocco, A., Bertin, M., Cibin, G., Pogany, D., Zanoni, E., & Meneghesso, G. (2013). Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions. Japanese Journal of Applied Physics, 52(8S), 08JN17. https://doi.org/10.7567/jjap.52.08jn17 ( reposiTUm)

Hisch, T., Liertzer, M., Pogany, D., Mintert, F., & Rotter, S. (2013). Pump-Controlled Directional Light Emission from Random Lasers. Physical Review Letters, 111(023902). https://doi.org/10.1103/physrevlett.111.023902 ( reposiTUm)

Alexewicz, A., Alomari, M., Maier, D., Behmenburg, H., Giesen, C., Heuken, M., Pogany, D., Kohn, E., & Strasser, G. (2013). Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation. Solid-State Electronics, 89, 207–211. https://doi.org/10.1016/j.sse.2013.09.001 ( reposiTUm)

Kuzmik, J., Vitanov, S., Dua, C., Carlin, J.-F., Ostermaier, C., Alexewicz, A., Strasser, G., Pogany, D., Gornik, E., Grandjean, N., Delage, S., & Palankovski, V. (2012). Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors. Japanese Journal of Applied Physics, 51(5R), 054102. https://doi.org/10.1143/jjap.51.054102 ( reposiTUm)

Marko, P., Alexewicz, A., Hilt, O., Meneghesso, G., Zanoni, E., Würfl, J., Strasser, G., & Pogany, D. (2012). Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors. Applied Physics Letters, 100(14), 143507. https://doi.org/10.1063/1.3701164 ( reposiTUm)

Ostermaier, C., Lagger, P., Alomari, M., Herfurth, P., Maier, D., Alexewicz, A., Forte-Poisson, M.-A. di, Delage, S. L., Strasser, G., Pogany, D., & Kohn, E. (2012). Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure. Microelectronics Reliability, 52(9–10), 1812–1815. https://doi.org/10.1016/j.microrel.2012.06.006 ( reposiTUm)

Alexewicz, A., Ostermaier, C., Henkel, C., Bethge, O., Carlin, J.-F., Lugani, L., Grandjean, N., Bertagnolli, E., Pogany, D., & Strasser, G. (2012). Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN-GaN metal oxide semiconductor high electron mobility transistors on Si substrates. Thin Solid Films, 520(19), 6230–6232. https://doi.org/10.1016/j.tsf.2012.05.073 ( reposiTUm)

Marko, P., Meneghini, M., Bychikhin, S., Marcon, D., Meneghesso, G., Zanoni, E., & Pogany, D. (2012). IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors. Microelectronics Reliability, 52(9–10), 2194–2199. https://doi.org/10.1016/j.microrel.2012.06.030 ( reposiTUm)

Chen, S.-H., Griffoni, A., Srivastava, P., Linten, D., Thijs, S., Scholz, M., Denis, M., Gallerano, A., Lafonteese, D., Concannon, A., Vashchenko, V. A., Hopper, P., Bychikhin, S., Pogany, D., Van Hove, M., Decoutere, S., & Groeseneken, G. (2012). HBM ESD Robustness of GaN-on-Si Schottky Diodes. IEEE Transactions on Device and Materials Reliability, 12(4), 589–598. https://doi.org/10.1109/tdmr.2012.2217746 ( reposiTUm)

Mamanee, W., Bychikhin, S., Johnsson, D., Jensen, N., Stecher, M., Gornik, E., & Pogany, D. (2012). Effect of Elevated Ambient Temperature on Thermal Breakdown Behavior in BCD ESD Protection Devices Subjected to Long Electrical Overstress Pulses. IEEE Transactions on Device and Materials Reliability, 12(3), 562–569. https://doi.org/10.1109/tdmr.2012.2193884 ( reposiTUm)

Čičo, K., Gregušová, D., Kuzmík, J., Jurkovič, M., Alexewicz, A., di Forte Poisson, M.-A., Pogany, D., Strasser, G., Delage, S., & Fröhlich, K. (2012). Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation. Solid-State Electronics, 67(1), 74–78. https://doi.org/10.1016/j.sse.2011.09.002 ( reposiTUm)

Notermans, G., Bychikhin, S., Pogany, D., Johnsson, D., & Maksimovic, D. (2012). HMM-TLP correlation for system-efficient ESD design. Microelectronics Reliability, 52(6), 1012–1019. https://doi.org/10.1016/j.microrel.2011.11.018 ( reposiTUm)

Pfost, M., Costachescu, D., Mayerhofer, A., Stecher, M., Bychikhin, S., Pogany, D., & Gornik, E. (2012). Accurate Temperature Measurements of DMOS Power Transistors up to Thermal Runaway by Small Embedded Sensors. IEEE Transactions on Semiconductor Manufacturing, 25(3), 294–302. https://doi.org/10.1109/tsm.2012.2202750 ( reposiTUm)

Rhayem, J., Besbes, B., Blečić, R., Bychikhin, S., Haberfehlner, G., Pogany, D., Desoete, B., Gillon, R., Wieers, A., & Tack, M. (2012). Electro-thermal characterization and simulation of integrated multi-trenched XtreMOSTM power devices. Microelectronics Journal, 43(9), 618–623. https://doi.org/10.1016/j.mejo.2011.09.010 ( reposiTUm)

Ostermaier, C., Pozzovivo, G., Carlin, J.-F., Basnar, B., Schrenk, W., Andrews, A. M., Douvry, Y., Gaquière, C., De Jaeger, J.-C., Toth, L., Pecz, B., Gonschorek, M., Feltin, E., Grandjean, N., Strasser, G., Pogany, D., & Kuzmik, J. (2011). Improvements of High Performance 2-nm-thin InAlN/AlN Barrier Devices by Interface Engineering. AIP Conference Proceedings. https://doi.org/10.1063/1.3666669 ( reposiTUm)

Pogany, D., Bychikhin, S., Heer, M., Mamanee, W., & Gornik, E. (2011). Application of transient interferometric mapping method for ESD and latch-up analysis. Microelectronics Reliability, 51(9–11), 1592–1596. https://doi.org/10.1016/j.microrel.2011.07.016 ( reposiTUm)

Köck, H., Djelassi, C., Filippis, S. de, Illing, R., Nelhiebel, M., Ladurner, M., Glavanovics, M., & Pogany, D. (2011). Improved thermal management of low voltage power devices with optimized bond wire positions. Microelectronics Reliability, 51(9–11), 1913–1918. https://doi.org/10.1016/j.microrel.2011.06.052 ( reposiTUm)

Pogany, D., Johnsson, D., Bychikhin, S., Esmark, K., Rodin, P., Stecher, M., Gornik, E., & Gossner, H. (2011). Measuring Holding Voltage Related to Homogeneous Current Flow in Wide ESD Protection Structures Using Multilevel TLP. IEEE Transactions on Electron Devices, 58(2), 411–418. https://doi.org/10.1109/ted.2010.2093143 ( reposiTUm)

Čičo, K., Hušeková, K., Ťapajna, M., Gregušová, D., Stoklas, R., Kuzmík, J., Carlin, J.-F., Grandjean, N., Pogany, D., & Fröhlich, K. (2011). Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics. Journal of Vacuum Science & Technology B, 29(1), 01A808. https://doi.org/10.1116/1.3521506 ( reposiTUm)

Kuzmik, J., Bychikhin, S., Pogany, D., Pichonat, E., Lancry, O., Gaquière, C., Tsiakatouras, G., Deligeorgis, G., & Georgakilas, A. (2011). Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond. Journal of Applied Physics, 109(8), 086106. https://doi.org/10.1063/1.3581032 ( reposiTUm)

Podgaynaya, A., Pogany, D., Gornik, E., & Stecher, M. (2010). Enhancement of the Electrical Safe Operating Area of Integrated DMOS Transistors With Respect to High-Engergy Short Duration Pulses. IEEE Transactions on Electron Devices, 57(11), 3044–3049. http://hdl.handle.net/20.500.12708/168055 ( reposiTUm)

Čičo, K., Gregušová, D., Gaži, Š., Šoltýs, J., Kuzmík, J., Carlin, J., Grandjean, N., Pogany, D., & Fröhlich, K. (2010). Optimization of the ohmic contact processing in InAlN/GaN high electron mobility transistors for lower temperature of annealing. Physica Status Solidi c, 7(1), 108–111. https://doi.org/10.1002/pssc.200982640 ( reposiTUm)

Podgaynaya, A., Rudolf, R., Pogany, D., Gornik, E., & Stecher, M. (2010). Experimental and Theoretical Analysis of the Electrical SOA of Rugged p-Channel LDMOS. IEEE Electron Device Letters, 31(12), 1440–1442. http://hdl.handle.net/20.500.12708/168058 ( reposiTUm)

Kuzmik, J., Ostermaier, C., Pozzovivo, G., Basnar, B., Schrenk, W., Carlin, J.-F., Gonschorek, M., Feltin, E., Grandjean, N., Douvry, Y., Gaquière, C., De Jaeger, J.-C., Cico, K., Fröhlich, K., Skriniarova, J., Kovac, J., Strasser, G., Pogany, D., & Gornik, E. (2010). Proposal and Performance Analysis of Normally Off n⁺⁺ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier. IEEE Transactions on Electron Devices, 57(9), 2144–2154. https://doi.org/10.1109/ted.2010.2055292 ( reposiTUm)

Kuzmik, J., Bychikhin, S., Pichonat, E., Gaquière, C., Morvan, E., Kohn, E., Teyssier, J.-P., & Pogany, D. (2010). Self-heating phenomena in high-power III-N transistors and new thermal characterization methods developed within EU project TARGET. International Journal of Microwave and Wireless Technologies, 1(2), 153–160. http://hdl.handle.net/20.500.12708/167173 ( reposiTUm)

Podgaynaya, A., Rudolf, R., Elattari, B., Pogany, D., Gornik, E., Stecher, M., & Strasser, G. (2010). Single pulse energy capability and failure modes of n- and p-channel LDMOS with thick copper metallization. Microelectronics Reliability, 50, 1347–1351. http://hdl.handle.net/20.500.12708/167189 ( reposiTUm)

Ostermaier, C., Ahn, S., Potzger, K., Helm, M., Kuzmik, J., Pogany, D., Strasser, G., Lee, J.-H., Hahm, S.-H., & Lee, J.-H. (2010). Study of Si implantation into Mg-doped GaN for MOSFETs. Physica Status Solidi c, 7(7–8), 1964–1966. https://doi.org/10.1002/pssc.200983534 ( reposiTUm)

Bychikhin, S., Haberfehlner, G., Rhayem, J., Vanderstraeten, D., Gillon, R., & Pogany, D. (2010). Investigation of smart power DMOS devices under repetitive stress conditions using transient thermal mapping and numerical simulation. Microelectronics Reliability, 50, 1427–1430. http://hdl.handle.net/20.500.12708/168080 ( reposiTUm)

Ostermaier, C., Pozzovivo, G., Basnar, B., Schrenk, W., Schmid, M., Tóth, L., Pécz, B., Carlin, J.-F., Gonschorek, M., Grandjean, N., Strasser, G., Pogany, D., & Kuzmik, J. (2010). Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors. Applied Physics Letters, 96, 2635151–2635153. http://hdl.handle.net/20.500.12708/167002 ( reposiTUm)

Donoval, D., Chvála, A., Šramatý, R., Kováč, J., Carlin, J.-F., Grandjean, N., Pozzovivo, G., Kuzmík, J., Pogany, D., Strasser, G., & Kordoš, P. (2010). Current transport and barrier height evaluation in Ni/InAlN/GaN Schottky diodes. Applied Physics Letters, 96(22), 223501. https://doi.org/10.1063/1.3442486 ( reposiTUm)

Ostermaier, C., Pozzovivo, G., Basnar, B., Schrenk, W., Carlin, J.-F., Gonschorek, M., Grandjean, N., Vincze, A., Tóth, L., Pécz, B., Strasser, G., Pogany, D., & Kuzmik, J. (2010). Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6. Japanese Journal of Applied Physics, 49(11R), 116506. https://doi.org/10.1143/jjap.49.116506 ( reposiTUm)

Johnsson, D., Pogany, D., Willemen, J., Gornik, E., & Stecher, M. (2010). Avalanche Breakdown Delay in ESD Protection Diodes. IEEE Transactions on Electron Devices, 57(10), 2470–2476. http://hdl.handle.net/20.500.12708/167185 ( reposiTUm)

Lavchiev, V., Saeed, A., Hu, C., Dubec, V., Pogany, D., Hilber, W., & Jantsch, W. (2010). Hybrid nanoimprinted laser based on conjugated conductive polymer and nanocrystal quantum dots. Optics Letters, 35(6), 868–870. http://hdl.handle.net/20.500.12708/167159 ( reposiTUm)

Heer, M., Domanski, K., Esmark, K., Glaser, U., Pogany, D., Gornik, E., & Stadler, W. (2009). Transient interferometric mapping of carrier plasma during external transient latch-up phenomenian latch-up test structures and I /O cells processed in CMOS technology. Microelectronics Reliability, 49, 1455–1464. http://hdl.handle.net/20.500.12708/165994 ( reposiTUm)

Kuzmik, J., Pozzovivo, G., Ostermaier, C., Strasser, G., Pogany, D., Gornik, E., Carlin, J.-F., Gonschorek, M., Feltin, E., & Grandjean, N. (2009). Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors. Journal of Applied Physics, 106(12), 124503. https://doi.org/10.1063/1.3272058 ( reposiTUm)

Mamanee, W., Johnsson, D., Rodin, P., Bychikhin, S., Dubec, V., Stecher, M., Gornik, E., & Pogany, D. (2009). Interaction of traveling current filaments and its relation to a nontrivial thermal breakdown scenario in avalanching bipolar transistor. Journal of Applied Physics, 105, 0845011–0845015. http://hdl.handle.net/20.500.12708/165910 ( reposiTUm)

Johnsson, D., Mayerhofer, M., Willemen, J., Glaser, U., Pogany, D., Gornik, E., & Stecher, M. (2009). Avalanche Breakdown Delay in High-Voltage p-n Junctions Caused by Pre-Pulse Voltage From IEC 61000-4-2 ESD Generators. IEEE Transactions on Device and Materials Reliability, 9(3), 412–418. http://hdl.handle.net/20.500.12708/165886 ( reposiTUm)

Köck, H., Kosel, V., Djelassi, C., Glavanovics, M., & Pogany, D. (2009). IR thermography and FEM simulation analysis of on-chip temperature during thermal-cycling power-metal reliability testing using in-situ heated structures. Microelectronics Reliability, 49, 1132–1136. http://hdl.handle.net/20.500.12708/165907 ( reposiTUm)

Kuzmik, J., Pozzovivo, G., Carlin, J. ‐F., Gonschorek, M., Feltin, E., Grandjean, N., Strasser, G., Pogany, D., & Gornik, E. (2009). Off-state breakdown in InAlN/AlN/GaN high electron mobility transistors. Physica Status Solidi c, 6(S2). https://doi.org/10.1002/pssc.200880754 ( reposiTUm)

Cico, K., Kuzmik, J., Liday, J., Husekova, K., Pozzovivo, G., Carlin, J.-F., Grandjean, N., Pogany, D., Vogrincic, P., & Fröhlich, K. (2009). InAlN/GaN metal-oxide-semiconductor high electron mobility transistor with Al₂O₃ insulating films grown by metal organic chemical vapor deposition using Ar and NH₃ carrier gases. Journal of Vacuum Science & Technology B, 27(1), 218–222. http://hdl.handle.net/20.500.12708/165641 ( reposiTUm)

Ostermaier, C., Pozzovivo, G., Carlin, J.-F., Basnar, B., Schrenk, W., Douvry, Y., Gaquière, C., DeJaeger, J.-C., Čičo, K., Fröhlich, K., Gonschorek, M., Grandjean, N., Strasser, G., Pogany, D., & Kuzmik, J. (2009). Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation. IEEE Electron Device Letters, 30(10), 1030–1032. https://doi.org/10.1109/led.2009.2029532 ( reposiTUm)

Ťapajna, M., Čičo, K., Kuzmík, J., Pogany, D., Pozzovivo, G., Strasser, G., Carlin, J.-F., Grandjean, N., & Fröhlich, K. (2009). Thermally induced voltage shift in capacitance-voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al₂O₃/InAlN/GaN heterostructures. Semiconductor Science and Technology, 24(3), 035008. https://doi.org/10.1088/0268-1242/24/3/035008 ( reposiTUm)

Tapajna, M., Kuzmik, J., Cico, K., Pogany, D., Pozzovivo, G., Strasser, G., Abermann, S., Bertagnolli, E., Carlin, J.-F., Grandjean, N., & Fröhlich, K. (2009). Interface States and Trapping Effects in Al₂O₃ and ZrO₂/InAlN/AlN/GaN Metal-Oxide-Semiconductor Heterostructures. Japanese Journal of Applied Physics, 48, 0902011–0902013. http://hdl.handle.net/20.500.12708/165908 ( reposiTUm)

Haberfehlner, G., Bychikhin, S., Dubec, V., Heer, M., Podgaynaya, A., Stecher, M., Gornik, E., & Pogany, D. (2009). Thermal imaging of smart power DMOS transistors in the thermally unstable regime using a compact transient interferometric mapping system. Microelectronics Reliability, 49, 1346–1351. http://hdl.handle.net/20.500.12708/165909 ( reposiTUm)

Pozzovivo, G., Kuzmik, J., Giesen, C., Heuken, M., Liday, J., Strasser, G., & Pogany, D. (2009). Low resistance ohmic contacts annealed at 600 °C on a InAlN/GaN heterostructure with SiCl4-reactive ion etching surface treatment. Physica Status Solidi (c), 6(52), 999–1002. http://hdl.handle.net/20.500.12708/165640 ( reposiTUm)

Heer, M., Grombach, P., Heid, A., & Pogany, D. (2008). Hot spot analysis during thermal shutdown of SOI BCDMOS half bridge driver for automotive applications. Microelectronics Reliability, 48(8–9), 1525–1528. https://doi.org/10.1016/j.microrel.2008.07.009 ( reposiTUm)

Pozzovivo, G., Kuzmik, J., Golka, S., Cico, K., Fröhlich, K., Carlin, J.-F., Gonschorek, M., Grandjean, N., Schrenk, W., Strasser, G., & Pogany, D. (2008). Influence of GaN capping on performance of InAlN/AlN/GaN MOS-HEMT with Al₂O₃ gate insulation grown by CVD. Physica Status Solidi (c), 5(6), 1956–1958. http://hdl.handle.net/20.500.12708/168651 ( reposiTUm)

Kuzmik, J., Pozzovivo, G., Abermann, S., Carlin, J.-F., Gonschorek, M., Feltin, E., Grandjean, N., Bertagnolli, E., Strasser, G., & Pogany, D. (2008). Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using ZrO₂ or HfO₂. IEEE Transactions on Electron Devices, 55(3), 937–941. http://hdl.handle.net/20.500.12708/168652 ( reposiTUm)

Pozzovivo, G., Kuzmik, J., Golka, S., Schrenk, W., Strasser, G., Pogany, D., Cico, K., Tapajna, M., Fröhlich, K., Carlin, J.-F., Gonschorek, M., Feltin, E., & Grandjean, N. (2007). Gate insulation and drain current saturation mechanism in InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors. Applied Physics Letters, 91, 0435091–0435093. http://hdl.handle.net/20.500.12708/168492 ( reposiTUm)

Kuzmik, J., Bychikhin, S., Pogany, D., Gaquière, C., Pichonat, E., & Morvan, E. (2007). Investigation of the thermal boundary resistance at the III-Nitride/substrate interface using optical methods. Journal of Applied Physics, 101, 0545081–0545086. http://hdl.handle.net/20.500.12708/168438 ( reposiTUm)

Cico, K., Kuzmik, J., Gregusova, D., Stoklas, R., Lalinsky, T., Georgakilas, A., Pogany, D., & Fröhlich, K. (2007). Optimization and performance of Al₂O₃/GaN metal-oxide-semiconductor structures. Microelectronics Reliability, 47, 790–793. http://hdl.handle.net/20.500.12708/168464 ( reposiTUm)

Kuzmik, J., Carlin, J.-F., Gonschorek, M., Kostopoulos, A., Konstantinidis, G., Pozzovivo, G., Golka, S., Georgakilas, A., Grandjean, N., Strasser, G., & Pogany, D. (2007). Gate-lag and drain-lag effects in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs. Physica Status Solidi A, 204, 2019–2022. http://hdl.handle.net/20.500.12708/168495 ( reposiTUm)

Kuzmik, J., Bychikhin, S., Lossy, R., Würfl, H.-J., di Forte Poisson, M.-A., Teyssier, J.-P., Gaquière, C., & Pogany, D. (2007). Transient self-heating effects in multifinger AlGaN/GaN HEMTs with metal airbridges. Solid-State Electronics, 51, 969–974. http://hdl.handle.net/20.500.12708/168496 ( reposiTUm)

Dubec, V., Bychikhin, S., Pogany, D., Gornik, E., Brodbeck, T., & Stadler, W. (2007). Backside Interferometric Methods for Localization of ESD-Induced Leakage Current and Metal Shorts. Microelectronics Reliability, 47, 1539–1544. http://hdl.handle.net/20.500.12708/168527 ( reposiTUm)

Heer, M., Bychikhin, S., Mamanee, W., Pogany, D., Heid, A., Grombach, P., Klaussner, M., Soppa, W., & Ramler, B. (2007). Experimental and numerical analysis of current flow homogeneity in low voltage SOI multi-finger gg-NMOS and NPN ESD protection devices. Microelectronics Reliability, 47, 1460–1465. http://hdl.handle.net/20.500.12708/168528 ( reposiTUm)

Bychikhin, S., Swietlik, T., Suski, T., Porowski, S., Perlin, P., & Pogany, D. (2007). Thermal analysis of InGaN/GaN (GaN substrate) laser diodes using transient interferometric mapping. Microelectronics Reliability, 47, 1659–1662. http://hdl.handle.net/20.500.12708/168529 ( reposiTUm)

Abermann, S., Pozzovivo, G., Kuzmik, J., Strasser, G., Pogany, D., Carlin, J.-F., Grandjean, N., & Bertagnolli, E. (2007). MOCVD of HfO₂ and ZrO₂ high-κ gate dielectrics for InAlN/AlN/GaN MOS- HEMTs. Semiconductor Science and Technology, 22, 1272–1275. http://hdl.handle.net/20.500.12708/168547 ( reposiTUm)

Kuzmik, J., Kostopoulos, T., Konstantinidis, G., Carlin, J.-F., Georgakilas, A., & Pogany, D. (2006). InAlN/GaN HEMTs: A first insight into technological optimization. IEEE Transactions on Electron Devices, 53(3), 422–426. http://hdl.handle.net/20.500.12708/171683 ( reposiTUm)

Moens, P., Bychikhin, S., & Pogany, D. (2006). Ruggedness of integrated VDMOS transistors under TLP stress. IEEE Transactions on Device and Materials Reliability, 6(3), 393–398. http://hdl.handle.net/20.500.12708/171754 ( reposiTUm)

Heer, M., Dubec, V., Bychikhin, S., Pogany, D., Gornik, E., Frank, M., Konrad, A., & Schulz, J. (2006). Analysis of triggering behaviour of high voltage CMOS LDMOS clamps and SCRs during ESD induced latch-up. Microelectronics Reliability, 46, 1591–1596. http://hdl.handle.net/20.500.12708/171736 ( reposiTUm)

Kuzmik, J., Bychikhin, S., Pogany, D., Gaquière, C., & Morvan, E. (2006). Current conduction and saturation mechanism in AlGaN/GaN ungated structures. Journal of Applied Physics, 99, 1237201–1237207. http://hdl.handle.net/20.500.12708/171750 ( reposiTUm)

Litzenberger, M., Fürböck, C., Bychikhin, S., Pogany, D., & Gornik, E. (2005). Scanning Heterodyne Interferometer Setup for the Time-Resolved Thermal and Free-Carrier Mapping in Semiconductor Devices. IEEE Transactions on Instrumentation and Measurement, 54(6), 2438–2444. http://hdl.handle.net/20.500.12708/171599 ( reposiTUm)

Kuzmik, J., Bychikhin, S., neuburger, M., Dadgar, A., Krost, A., Kohn, E., & Pogany, D. (2005). Transient Thermal Characterization of AlGaN/GaN HEMTs Grown on Silicon. IEEE Transactions on Electron Devices, 52(8), 1698–1704. http://hdl.handle.net/20.500.12708/171566 ( reposiTUm)

Heer, M., Dubec, V., Blaho, M., Bychikhin, S., Pogany, D., Gornik, E., Denison, M., Stecher, M., & Groos, G. (2005). Automated setup for thermal imaging and electrical degradation study of power DMOS devices. Microelectronics Reliability, 45, 1688–1693. http://hdl.handle.net/20.500.12708/171564 ( reposiTUm)

Moens, P., Bychikhin, S., Reynders, K., Pogany, D., Gornik, E., & Tack, M. (2005). Dynamics of integrated vertical DMOS transistors under 100ns TLP stress. IEEE Transactions on Electron Devices, 52(5), 1008–1013. http://hdl.handle.net/20.500.12708/171499 ( reposiTUm)

Stadler, W., Esmark, K., Reynders, K., Zubeidat, M., Graf, M., Wilkening, W., Willemen, J., Qu, N., Mettler, S., Etherton, M., Nuernbergk, D., Wolf, H., Gieser, H., Soppa, W., Heyn, V. D., Natarajan, M., Groeseneken, G., Morena, E., Stella, R., … Frank, M. (2005). Test Circuits for Fast and Reliable Assessment of CDM Robustness of I/O stages. Microelectronics Reliability, 45(2), 269–277. http://hdl.handle.net/20.500.12708/171465 ( reposiTUm)

Bychikhin, S., Vandamme, L. K. J., Pogany, D., Meneghesso, G., & Zanoni, E. (2005). Low frequency noise sources in as-prepared and aged GaN-based light emitting diodes. Journal of Applied Physics, 97, 1237141–1237147. http://hdl.handle.net/20.500.12708/171501 ( reposiTUm)

Reggiani, S., Gnani, E., Rudan, M., Baccarani, G., Bychikhin, S., Kuzmik, J., Pogany, D., Gornik, E., Denison, M., Jensen, N., Groos, G., & Stecher, M. (2005). A New Numerical and Experimental Analysis Tool for ESD Devices by Means of the Transient Interferometric Technique. IEEE Electron Device Letters, 26(12), 916–918. http://hdl.handle.net/20.500.12708/171603 ( reposiTUm)

Denison, M., Blaho, M., Rodin, P., Dubec, V., Pogany, D., Silber, D., Gornik, E., & Stecher, M. (2004). Moving Current Filaments in Integrated DMOS Transistors Under Short-Duration Current Stress. IEEE Transactions on Electron Devices, 51(10), 1695–1703. http://hdl.handle.net/20.500.12708/174409 ( reposiTUm)

Pogany, D., Bychikhin, S., Kuzmik, J., Dubec, V., Jensen, N., Denison, M., Groos, G., Stecher, M., & Gornik, E. (2003). Thermal  Distribution During Destructive Pulses in ESD Protection Devices Using a Single-Shot Two-Dimensional Interferometric Method. IEEE Transactions on Device and Materials Reliability, 3(4), 197–201. http://hdl.handle.net/20.500.12708/174403 ( reposiTUm)

Seliger, N., Pogany, D., Fürböck, C., Habaš, P., Gornik, E., & Stoisiek, M. (1997). A Laser Beam Method for Evaluation of Thermal Time Constant in Smart Power Devices. Microelectronics Reliability, 37(10–11), 1727–1730. https://doi.org/10.1016/s0026-2714(97)00149-2 ( reposiTUm)

Seliger, N., Habaš, P., Pogany, D., & Gornik, E. (1997). Time-Resolved Analysis of Self-Heating in Power VDMOSFETs Using Backside Laserprobing. Solid-State Electronics, 41(9), 1285–1292. https://doi.org/10.1016/s0038-1101(97)00131-7 ( reposiTUm)

Ruch, B., Padovan, V., Pogany, D., Ostermaier, C., Butej, B., Koller, C., & Waltl, M. (2024). Influence of Hole Injection on Associated Recovery Phenomena in GaN-Based GITs Subjected to Hot Electron Trapping. In M. Waltl, F. F. Huemer, & M. Hofbauer (Eds.), 2024 Austrochip Workshop on Microelectronics (Austrochip) (pp. 1–4). https://doi.org/10.1109/Austrochip62761.2024.10716239 ( reposiTUm)

Stabentheiner, M., Tilly, D., Schinnerl, T., Taylor, A. A., Javernik, P., Novak, M., Ostermaier, C., & Pogany, D. (2024). Identification and Characterization of Conductive Dislocations in p-GaN/AlGaN/GaN Heterojunctions on GaN-on-Si Substrates. In ISTFA 2024 : Conference Proceedings from the 50th International Symposium for Testing and Failure Analysis (pp. 146–152). https://doi.org/10.31399/asm.cp.istfa2024p0146 ( reposiTUm)

Hofer, A. M., Koller, C., Modolo, N., Pogany, D., & Ostermaier, C. (2024). Improved CV characterization technique for interface state evaluation in Si3N4/n-GaN MIS Capacitors. In 35th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ESREF 2024: Proceedings (p. paper 159). http://hdl.handle.net/20.500.12708/204128 ( reposiTUm)

Wieland, D., Butej, B., Stabentheiner, M., Koller, C., Pogany, D., & Ostermaier, C. (2024). Analyzing the role of hole injection on the short circuit performance of p-GaN gate power HEMTs. In 35th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2024): Proceedings. 35th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, (ESREF 2024), Parma, Italy. http://hdl.handle.net/20.500.12708/204123 ( reposiTUm)

Wieland, D., Ofner, S., Stabentheiner, M., Butej, B., Koller, C., Sun, J., Minetto, A., Reiser, K., Häberlen, O., Nelhiebel, M., Glavanovics, M., Pogany, D., & Ostermaier, C. (2023). A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests. In 2023 IEEE International Reliability Physics Symposium (IRPS) (pp. 1–6). https://doi.org/10.1109/IRPS48203.2023.10117943 ( reposiTUm)

Böckle, R., Sistani, M., Sadre-Momtaz, Z., den Hertog, M., Lugstein, A., Weber, W. M., & Pogany, D. (2022). Low-frequency Noise in Room-temperature quasi-ballistic Ge NW Transistors. In Nanowire Week 2022 (p. 20). http://hdl.handle.net/20.500.12708/77712 ( reposiTUm)

Karaca, H., Fleury, C., Holland, S., Ritter, H.-M., Notermans, G., & Pogany, D. (2019). Mechanism of sequential finger triggering of multi-finger floating-base SCRs due to inherent substrate currents. In Proc. EOS/ESD Symposium 2019. EOS/ESD Symposium 2019, Riverside, United States of America (the). http://hdl.handle.net/20.500.12708/76753 ( reposiTUm)

Notermans, G., Ritter, H.-M., Holland, S., & Pogany, D. (2018). Modeling dynamic overshoot in ESD protections. In Electrical overstress/Electrostatic discharge (EOS/ESD) Symposium. Electrical overstress/Electrostatic discharge (EOS/ESD) Symposium, Reno, United States of America (the). http://hdl.handle.net/20.500.12708/76362 ( reposiTUm)

Koller, C., Pobegen, G., Ostermaier, C., & Pogany, D. (2017). Evidence of defect band in carbon-doped GaN controlling leakage current and trapping dynamics. In Proceedings 2017 IEEE International Electron Devices Meeting (pp. 753–756). http://hdl.handle.net/20.500.12708/75961 ( reposiTUm)

Reiner, M., Lagger, P. W., Prechtl, G., Steinschifter, P., Pietschnig, R., Pogany, D., & Ostermaier, C. (2015). Modification of “Native” Surface Donor States in AlGaN/GaN MIS-HEMTs by Fluorination: Perspective for Defect Engineering. In Technical Digest of International Electron Device Meeting (pp. 1–4). http://hdl.handle.net/20.500.12708/74857 ( reposiTUm)

Lagger, P. W., Donsa, S., Spreitzer, P., Pobegen, G., Reiner, M., Naharashi, H., Mohamed, J., Mösslacher, M., Prechtl, G., Pogany, D., & Ostermaier, C. (2015). Thermal activation of PBTI-related stress and recovery processes in GaN MIS-HEMTs using on-wafer heaters. In 2015 IEEE International Reliability Physics Symposium. International Reliability Physics Symposium (IRPS), Phoenix, Non-EU. IEEE. https://doi.org/10.1109/irps.2015.7112767 ( reposiTUm)

Capriotti, M., Fleury, C., Bethge, O., Rigato, M., Lancaster, S., Pogany, D., & Strasser, G. (2015). E-mode AlGaN/GaN True-MOS, with High-k ZrO2 Gate Insulator. In Proceedings of the ESSDERC (pp. 60–63). http://hdl.handle.net/20.500.12708/74648 ( reposiTUm)

Capriotti, M., Fleury, C., Ostermaier, C., Strasser, G., & Pogany, D. (2015). Interaction Between the Instrinsic Frequency Response of the III-N Barrier Layer and Interface States in III-N MIS-HEMTs in Spill-Over Regime. In 2015 Compound Semiconductor Week (pp. 1–2). http://hdl.handle.net/20.500.12708/74647 ( reposiTUm)

Lagger, P. W., Ostermaier, C., & Pogany, D. (2014). Enhancement of Vth Drift for Repetitive Gate Stress Pulses due to Charge Feedback Effect in GaN MIS-HEMTs. In Proceeding of the IEEE International Reliability Physics Symposium (IRPS) (pp. 6C.3.1.-6C.3.6). http://hdl.handle.net/20.500.12708/74364 ( reposiTUm)

Boschke, R., Linten, D., Hellings, G., Chen, S.-H., Scholz, M., Mitard, J., Mertens, H., Witters, L., Van Campenhout, J., Verheyen, P., Pogany, D., & Groeseneken, G. (2014). ESD Characterization of Germanium diodes. In Proc. Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2014 36th (pp. 1–9). IEEE. http://hdl.handle.net/20.500.12708/74387 ( reposiTUm)

Kohn, E., Alomari, M., Gao, Z., Rossi, S., Dussaigne, A., Carlin, J.-F., Grandjean, N., Aretouli, K. E., Adikimenakis, A., Konstantinidis, G., Georgakilas, A., Zhang, Y., Weaver, J., Calvo, J. A., Kuball, M., Bychikhin, S., Kuzmik, J., Pogany, D., Toth, L., … Kovacs, A. (2014). Direct Interpretation of Diamond Heat Spreader with GaN-Based HEMT Device Structures. In Direct Integration of Diamond Heat Spreader with GaN-Based HEMT Device Structures (pp. 26–29). http://hdl.handle.net/20.500.12708/74112 ( reposiTUm)

Zhang, Y., Dobson, P. S., Weaver, J., Alomari, M., Kohn, E., Bychikhin, S., & Pogany, D. (2013). Measuring Thermal Conductivity of Nanocrystalline Diamond Film with a Scanning Thermal Microscope. In IEEE tnternational Conference on Nanotechnology (pp. 1–6). http://hdl.handle.net/20.500.12708/73599 ( reposiTUm)

Capriotti, M., Alexewicz, A., Bethge, O., Visalli, D., Derluyn, J., Fleury, C., Bertagnolli, E., Pogany, D., & Strasser, G. (2013). AlGaN/GaN MOSHEMTS with selective removal of In-Situ Grown SiN Passivation. In WOCSDICE 2013 (pp. 67–68). http://hdl.handle.net/20.500.12708/73672 ( reposiTUm)

Fleury, C., Bychikhin, S., Hilt, O., Würfl, J., Strasser, G., & Pogany, D. (2013). Transient Thermal Mapping Of P-Gan Gate Normally-Off Algan/gan Transistors. In WOCSDICE 2013 (pp. 69–70). http://hdl.handle.net/20.500.12708/73671 ( reposiTUm)

Fleury, C., Bychikhin, S., Cappriotti, M., Hilt, O., Zhytnytska, R., Würfl, J., Derluyn, J., Visalli, D., Strasser, G., & Pogany, D. (2013). Localization Of Vertical Breakdown Spots In Normally-Off And Normally-On Algan/gan Hemts On Sic And Si Substrates. In WOCSDICE 2013 (pp. 159–160). http://hdl.handle.net/20.500.12708/73670 ( reposiTUm)

Lagger, P. W., Schiffmann, A., Pobegen, G., Pogany, D., & Ostermaier, C. (2013). New insights on forward Gate Bias induced Threshold Voltage Instabilities of GaN-Based MIS-HEMTS. In WOCSDICE 2013 (pp. 161–162). http://hdl.handle.net/20.500.12708/73674 ( reposiTUm)

Lagger, P. W., Ostermaier, C., Pobegen, G., & Pogany, D. (2012). Toward understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs. In International Electron Devices Meeting (IEDM) (pp. 1–4). http://hdl.handle.net/20.500.12708/73221 ( reposiTUm)

Wagner, P.-J., Kaczer, B., Scholten, A., Reisinger, H., Bychikhin, S., Pogany, D., Vandamme, L. K. J., & Grasser, T. (2012). On the Correlation Between NBTI, SILC, and Flicker Noise. In IEEE International Integrated Reliability Workshop Final Report (pp. 60–64). http://hdl.handle.net/20.500.12708/73368 ( reposiTUm)

Marko, P., Alexewicz, A., Hilt, O., Meneghesso, G., Würfl, J., Zanoni, E., Strasser, G., & Pogany, D. (2012). Random telegraph noise and bursts in reverse-bias-stressed AlGaN/GaN HEMTs. In WOCSDICE-EXMATEC 2012 (pp. 1–2). http://hdl.handle.net/20.500.12708/73128 ( reposiTUm)

Alexewicz, A., Behmenburg, H., Giesen, C., Heuken, M., Bychikhin, S., Kuzmik, J., Strasser, G., & Pogany, D. (2012). Thermal analysis and simulation of InAlGaN/AlN GaN HEMTS on Si-Diamond-Si Substrates. In WOCSDICE-EXMATEC 2012. Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Malaga, Spain, EU. http://hdl.handle.net/20.500.12708/73095 ( reposiTUm)

Shrivastava, M., Russ, C., Gossner, H., Bychikhin, S., Pogany, D., & Gornik, E. (2011). ESD Robust DeMOS Devices in Advanced CMOS Technologies. In Eos/esd Symposium (pp. 401–410). http://hdl.handle.net/20.500.12708/72562 ( reposiTUm)

Chen, S.-H., Griffoni, A., Srivastava, P., Linten, D., Thijs, S., Scholz, M., Marcon, D., Gallerano, A., Lafonteese, D., Concannon, A., Vashchenko, V. A., Hopper, P., Bychikhin, S., Pogany, D., Van Hove, M., Decoutere, S., & Groeseneken, G. (2011). HBM ESD Robustness of GaN-on-Si Schottky Diodes. In Eos/esd Symposium (pp. 61–68). http://hdl.handle.net/20.500.12708/72563 ( reposiTUm)

Alexewicz, A., Ostermaier, C., Henkel, C., Bethge, O., Carlin, J.-F., Gonschorek, M., Grandjean, N., Pogany, D., Bertagnolli, E., & Strasser, G. (2011). Threshold Voltage Scaling In E-Mode Inaln/aln-Gan Hemts On Si Substrates. In WOCSDICE 2011 (pp. 1–2). http://hdl.handle.net/20.500.12708/72515 ( reposiTUm)

Pogany, D., Zeiner, C., Bychikhin, S., Burchhart, T., Lugstein, A., & Vandamme, L. K. J. (2011). RTS and 1/f noise in Ge nanowire transistors. In Proc. Int. Conf. on Noise and Fluctuations (pp. 372–375). http://hdl.handle.net/20.500.12708/72516 ( reposiTUm)

Pfost, M., Costachescu, D., Podgaynaya, A., Stecher, M., Bychikhin, S., Pogany, D., & Gornik, E. (2010). Small embedded sensors for accurate temperature measurements in DMOS power transistors. In Proc. ICMTS 2010 (pp. 2–6). http://hdl.handle.net/20.500.12708/72001 ( reposiTUm)

Rhayem, J., Besbes, B., Blecic, R., Bychikhin, S., Haberfehlner, G., Pogany, D., Desoete, B., Gillon, R., Wieers, A., & Tack, M. (2010). "Electro-thermal characterization and simulation of integrated multi trenched XtreMOS power devices. In Proc. THERMINIC 2010 (pp. 140–143). http://hdl.handle.net/20.500.12708/72008 ( reposiTUm)

Shrivastava, M., Bychikhin, S., Pogany, D., Schneider, J., Shojaei, M., Gossner, H., Gornik, E., & Ramgopal Rao, V. (2010). On the differences between 3D filamentation and failure of N & P type drain extended MOS devices under ESD conditions. In Proc. Int. Reliability Physics Symposium (pp. 480–484). http://hdl.handle.net/20.500.12708/72006 ( reposiTUm)

Rhayem, J., Vrbicky, A., Blebic, R., Malena, P., Pogany, D., Bychikhin, S., Wieers, A., & Baric, A. (2010). New methodology on electro-thermal characterization and modeling of large power drivers using lateral PNP BJTs. In Proc. Eurosime 2010 (pp. 1–4). http://hdl.handle.net/20.500.12708/72026 ( reposiTUm)

Alexewicz, A., Ostermaier, C., Pozzovivo, G., Schrenk, W., Schmid, M., Toth, L., Pecz, B., Carlin, J.-F., Gonschorek, M., Grandjean, N., Kuzmik, J., Pogany, D., & Strasser, G. (2010). Microstructural and Electrical Analyses of Oxygen Diffusion into Iridium Metal Gates. In 60th Annual Meeting Austrian Physical Society (pp. 180–181). http://hdl.handle.net/20.500.12708/71723 ( reposiTUm)

Kuzmik, J., Ostermaier, C., Pozzovivo, G., Basnar, B., Schrenk, W., Carlin, J.-F., Gonschorek, M., Feltin, E., Grandjean, N., Douvry, Y., Gaquière, C., De Jaeger, J.-C., Strasser, G., Pogany, D., & Gornik, E. (2010). Role of the gate-to-drain distance in the performance of the normally-off InAlN/GaN HEMTs. In ASDAM 2010 (pp. 163–166). http://hdl.handle.net/20.500.12708/71783 ( reposiTUm)

Ostermaier, C., Pozzovivo, G., Carlin, J.-F., Basnar, B., Schrenk, W., Douvry, Y., Gaquière, C., De Jaeger, J.-C., Gonschorek, M., Feltin, E., Grandjean, N., Strasser, G., Pogany, D., Gornik, E., & Kuzmik, J. (2010). Ultrathin 2 nm Barrier HEMT for state-of-the-art fT.LG product of 16.9 GHz.µm. In 16th International Winterschool Mauterndorf (pp. 257–258). http://hdl.handle.net/20.500.12708/71744 ( reposiTUm)

Ostermaier, C., Pozzovivo, G., Carlin, J.-F., Basnar, B., Schrenk, W., Douvry, Y., Gaquière, C., De Jaeger, J.-C., Gonschorek, M., Feltin, E., Grandjean, N., Strasser, G., Pogany, D., Gornik, E., & Kuzmik, J. (2010). A Novel Concept of High Performance FETs for Harsh Environment. In Tagungsband zur Informationstagung Mikroelektronik 10 (pp. 41–44). http://hdl.handle.net/20.500.12708/71730 ( reposiTUm)

Köck, H., Illing, R., Ostermann, T., Decker, S., Dibra, D., Pobegen, G., de Filippis, S., Glavanovics, M., & Pogany, D. (2010). Design of a test chip with small embedded temperature sensor structures realized in a common-drain power trench technology. In 2011 IEEE Conference on Microelectronic Test Structures (pp. 176–181). http://hdl.handle.net/20.500.12708/72561 ( reposiTUm)

Ostermaier, C., Kuzmik, J., Carlin, J.-F., Pozzovivo, G., Basnar, B., Schrenk, W., Cico, K., Fröhlich, K., Gonschorek, M., Grandjean, N., Strasser, G., & Pogany, D. (2009). High Performance normally-on and normally-off n++ GaN/InAlN/GaN HEMTs. In Programm and Book of Abstracts (pp. 56–59). http://hdl.handle.net/20.500.12708/70976 ( reposiTUm)

Kuzmik, J., Pozzovivo, G., Ostermaier, C., Carlin, J.-F., Gonschorek, M., Feltin, E., Grandjean, N., Strasser, G., & Pogany, D. (2009). InAlN/GaN HEMTs: a new perspective in degradation limits of III-N HEMTs? In Program and Book of Abstracts (pp. 52–55). http://hdl.handle.net/20.500.12708/70975 ( reposiTUm)

Lavchiev, V., Jantsch, W., & Pogany, D. (2009). A quantum dot nanoimprinted DFB laser. In IOP Conference Series: Materials Science and Engineering (p. 012028). https://doi.org/10.1088/1757-899x/6/1/012028 ( reposiTUm)

Pogany, D., Bychikhin, S., Mamanee, W., Gornik, E., Johnsson, D., Esmark, K., Gossner, H., Stecher, M., & Rodin, P. (2009). Interacting traveling current filaments and spreading fronts in sandwiched semiconductor nanostructures. In Bulletin SPG/SSP (p. 87). http://hdl.handle.net/20.500.12708/71050 ( reposiTUm)

Lebon, J., Jenicot, G., Moens, P., Pogany, D., & Bychikhin, S. (2009). EC vs HBM: How to optimize on-chip protections to handle both requirements? In EOS/ESD Symposium 09 (pp. 1–6). http://hdl.handle.net/20.500.12708/71047 ( reposiTUm)

Podgaynaya, A., Pogany, D., Gornik, E., & Stecher, M. (2009). Investigation and improvement of the electrical Safe Operating Area of DMOS transistor during ESD Events. In IEEE CFP09RPS-CDR 47th Annual International Reliability Physics Symposium (pp. 437–442). http://hdl.handle.net/20.500.12708/71048 ( reposiTUm)

Kuzmik, J., Pozzovivo, G., Ostermaier, C., Carlin, J.-F., Gonschorek, M., Feltin, E., Grandjean, N., Strasser, G., Gornik, E., & Pogany, D. (2009). Analysis od degradation mechanisms in InAlN/GaN HEMTs. In Abstract Book (pp. 949–950). http://hdl.handle.net/20.500.12708/71049 ( reposiTUm)

Ostermaier, C., Ahn, S., Potzger, K., Helm, M., Kuzmik, J., Pogany, D., Strasser, G., Lee, J.-H., Hahm, S.-H., & Lee, J.-H. (2009). Studyo f Si implantationin to Mg-dopedG aNf or MOSFETs. In ICNS 8 (pp. 1245–1246). http://hdl.handle.net/20.500.12708/71095 ( reposiTUm)

Kohn, E., Alomari, M., Denisenko, A., Dipalo, M., Maier, D., Medjdoub, F., Pietzka, C., Delage, S. L., diForte-Poisson, M.-A., Morvan, E., Sarazin, N., Jacquet, J.-C., Dua, C., Carlin, J.-F., Grandjean, N., Py, M. A., Gonschorek, M., Kuzmik, J., Pogany, D., … Schineller, B. (2009). InAlN/GaN Heterostructures for Microwave Power and Beyond. In IEDM 09 (pp. 173–176). http://hdl.handle.net/20.500.12708/71345 ( reposiTUm)

Pogany, D., Johnsson, D., Bychikhin, S., Esmark, K., Rodin, P., Gornik, E., Stecher, M., & Gossner, H. (2009). Nonlinear dynamics approach in modeling of the on-state-spreading - related voltage and current transients in 90nm CMOS silicon controlled rectifiers. In IEDM 09 (pp. 509–512). http://hdl.handle.net/20.500.12708/71344 ( reposiTUm)

Shrivastava, M., Bychikhin, S., Pogany, D., Schneider, J., Baghini, S., Gossner, H., Gornik, E., & Ramgopal Rao, V. (2009). Filament study of STI type drain extended NMOS device using transient interferometric mapping. In IEDM 09 (pp. 417–420). http://hdl.handle.net/20.500.12708/71343 ( reposiTUm)

Ostermaier, C., Pozzovivo, G., Carlin, J.-F., Basnar, B., Schrenk, W., Cico, K., Fröhlich, K., Gonschorek, M., Grandjean, N., Strasser, G., Pogany, D., & Kuzmik, J. (2009). Thermally Stable InAIN/GaN Enhancement-Mode HEMTs with highly doped GaN Cap. In ICNS-8 (pp. 1052–1053). http://hdl.handle.net/20.500.12708/71103 ( reposiTUm)

Bychikhin, S., Ferreyra, R., Ostermaier, C., Pozzovivo, G., Kuzmik, J., Coquelin, M., Alomari, M., Kohn, E., di Forte-Poisson, M.-A., Delage, S. L., Strasser, G., & Pogany, D. (2009). Investigation of nanosecond-time-scale dynamics of electric field distribution and breakdown phenomena in InAlN/GaN TLM structures. In HETECH 2009 (pp. 49–50). http://hdl.handle.net/20.500.12708/71105 ( reposiTUm)

Esmark, K., Gossner, H., Bychikhin, S., Pogany, D., Russ, C., Langguth, G., & Gornik, E. (2008). Transient behaviour of SCRs under ESD pulses. In Proc. IRPS (International Reliability Physics Symposium) 2008 (pp. 247–253). http://hdl.handle.net/20.500.12708/70560 ( reposiTUm)

Kuzmik, J., di Forte Poisson, M.-A., Gregusova, D., Sarazin, N., Morvan, E., Fröhlich, K., Delage, S. L., & Pogany, D. (2008). On state breakdown in InAlN/GaN HEMT. In abstract book (pp. 27–28). http://hdl.handle.net/20.500.12708/70562 ( reposiTUm)

Johnsson, D., Mamanee, W., Bychikhin, S., Pogany, D., Gornik, E., & Stecher, M. (2008). Second breakdown in bipolar ESD protection devices during low current long duration stress and its relation to moving current-tubes. In Proc. IRPS (International Reliability Physics Symposium) (pp. 240–246). http://hdl.handle.net/20.500.12708/70561 ( reposiTUm)

Tapajna, M., Cico, K., Kuzmik, J., Pozzovivo, G., Pogany, D., Carlin, J.-F., Grandjean, N., & Fröhlich, K. (2008). Characterization of Semiconductor/Oxide Interface States in the Al2O3/InAlN/GaN MOS structures. In abstract book (pp. 117–118). http://hdl.handle.net/20.500.12708/70563 ( reposiTUm)

Pozzovivo, G., Kuzmik, J., Liday, J., Giesen, C., Heuken, M., Strasser, G., & Pogany, D. (2008). Low resistance ohmic contacts annealed at 600 C on InAlN/GaN heterostructure with SiCl4 reactive ion etching treatment. In Abstracts (pp. 572–573). http://hdl.handle.net/20.500.12708/70507 ( reposiTUm)

Kuzmik, J., Pozzovivo, G., Carlin, J.-F., Gonschorek, M., Feltin, E., Grandjean, N., Strasser, G., & Pogany, D. (2008). Off-state breakdown in InAlN/GaN HEMTs. In Abstracts (pp. 304–305). http://hdl.handle.net/20.500.12708/70508 ( reposiTUm)

Cico, K., Gregusova, D., Kuzmik, J., di Forte Poisson, M.-A., Lalinsky, T., Pogany, D., Delage, S. L., & Fröhlich, K. (2008). InAlN/GaN MOSHEMT with Al2O3 insulating film. In ASDAM (pp. 87–90). http://hdl.handle.net/20.500.12708/70505 ( reposiTUm)

Heer, M., Pogany, D., Street, M., Smith, I., Riedlberger, F., Bonfert, D., & Gieser, H. (2008). Transient latch-up analysis of power control device with combined light emission and backside transient interferometric mapping methods. In Proceedings from the 34th International Symposium for Testing and Failure Analysis (p. 6). http://hdl.handle.net/20.500.12708/70495 ( reposiTUm)

Ostermaier, C., Ahn, S.-I., Potzger, K., Helm, M., Kalchmair, S., Pogany, D., Lee, J.-H., Hahm, S.-H., & Lee, J.-H. (2008). Realization of Inversion-type GaN MOSFETs with Ar Implantation for Device Isolation. In Proceedings Junior Scientist Conference 2008 (pp. 197–198). http://hdl.handle.net/20.500.12708/70496 ( reposiTUm)

Tapajna, M., Cico, K., Kuzmik, J., Pozzovivo, G., Pogany, D., Abermann, S., Bertagnolli, E., Carlin, J.-F., Grandjean, N., & Fröhlich, K. (2008). Evaluation of the interface state Density on Ni/ZrO2/InAlN/GaN MOS contacts. In Abstracts (pp. 314–315). http://hdl.handle.net/20.500.12708/70506 ( reposiTUm)

Pozzovivo, G., Kuzmik, J., Schrenk, W., Carlin, J.-F., Gonschorek, M., Grandjean, N., di Forte Poisson, M.-A., Delage, S. L., Strasser, G., & Pogany, D. (2007). Optimization of the plasma etching in fabrication of InAlN/AlN/GaN HEMTs. In Proceedings of the 31st Workshop on Compound Semiconductor Devices and Inetrated Circuits (pp. 245–247). http://hdl.handle.net/20.500.12708/69714 ( reposiTUm)

Kuzmik, J., Pozzovivo, G., Cico, K., Golka, S., Schrenk, W., Carlin, J.-F., Gonschorek, M., Grandjean, N., Fröhlich, K., Strasser, G., & Pogany, D. (2007). Technology and performance of Al2O3/InAlN/AlN/GaN MOS HEMTs. In Proceedings of The 31st Workshop on Compound Semiconductor Devices and Integrated Circuits (pp. 359–360). http://hdl.handle.net/20.500.12708/69715 ( reposiTUm)

Teyssier, J.-P., Sommet, R., Pogany, D., Kuzmik, J., & Gaquière, C. (2007). Thermal measurement of microwave transistors and MMIC within TARGET NoE. In Proc. Target Days 2007 (pp. 67–71). http://hdl.handle.net/20.500.12708/70039 ( reposiTUm)

Denison, M., Murtaza, S., Steinhoff, R., Merchant, S., Pendharkar, S., Bychikhin, S., & Pogany, D. (2007). 25V ESD npn transistor optimized by distributed emitter ballasting using emitter contact area segmentation. In Proc. International Reliability Physics Symposium (IRPS) (pp. 604–605). http://hdl.handle.net/20.500.12708/70038 ( reposiTUm)

Pozzovivo, G., Kuzmik, J., Golka, S., Cico, K., Fröhlich, K., Carlin, J.-F., Gonschorek, M., Grandjean, N., Schrenk, W., Strasser, G., & Pogany, D. (2007). Influence of GaN capping on performance of InAlN/AlN/GaN MOS-HEMTs with Al2O3 gate insulation prepared by CVD. In Proceeding of The 7th Int´l Conference of Nitride Semiconductors (ICNS-7) (p. 48). http://hdl.handle.net/20.500.12708/69835 ( reposiTUm)

Bychikhin, S., Dubec, V., Kuzmik, J., Würfl, J., Kurpas, P., Teyssier, J.-P., & Pogany, D. (2007). Current Gain Collapse in HBTs Analysed by Transient Interferometric Mapping Method. In Proceedings of the 2nd European Microwave Integrated Circuits Conderence (pp. 28–31). http://hdl.handle.net/20.500.12708/69829 ( reposiTUm)

Domanski, K., Heer, M., Esmark, K., Pogany, D., Stadler, W., & Gornik, E. (2007). External (transient) latchup phenomenon investigated by optical mapping (TIM) technique. In EOS/ESD Symposium (pp. 07347–07353). http://hdl.handle.net/20.500.12708/69834 ( reposiTUm)

Kuzmik, J., Pozzovivo, G., Abermann, S., Carlin, J.-F., Gonschorek, M., Cico, K., Fröhlich, K., Grandjean, N., Bertagnolli, E., Strasser, G., & Pogany, D. (2007). Gate insulation and current collapse suppression in InAlN/GaN HEMTs using High-k dielectrics. In Proceeding of The 7th Int´l Conference of Nitride Semiconductors (ICNS-7) (p. 41). http://hdl.handle.net/20.500.12708/69836 ( reposiTUm)

Kuzmik, J., Bychikhin, S., Lossy, R., Würfl, H.-J., di Forte Poisson, M.-A., Teyssier, J.-P., Gaquière, C., & Pogany, D. (2006). Investigation of the cooling effect introduced by the airbridge structure in the multifinger AlGaN/GaN HEMTs. In Abstract Book WOCSDICE (pp. 181–183). http://hdl.handle.net/20.500.12708/69082 ( reposiTUm)

Kuzmik, J., Carlin, J.-F., Kostopoulos, T., Konstantinidis, G., Bychikhin, S., Georgakilas, A., & Pogany, D. (2006). InAlN/(In)GaN HEMTs for high power applications (Ultragan project). In Workshop on GaN Devices (pp. 1–14). http://hdl.handle.net/20.500.12708/69311 ( reposiTUm)

Pogany, D., Kuzmik, J., Bychikhin, S., Pichonat, E., Gaquière, C., Andersson, K., Fager, C., Teyssier, J.-P., Würfl, J., & di Forte Poisson, M.-A. (2006). Thermal Characterization of HF power FETs. In Target Days 2006, Book of Proceedings (pp. 31–34). http://hdl.handle.net/20.500.12708/69327 ( reposiTUm)

Cico, K., Kuzmik, J., Gregusova, D., Lalinsky, T., Georgakilas, A., Pogany, D., & Fröhlich, K. (2006). Rapid thermal annealing and performance of Al2O3/GaN metal-oxide-semiconductor structures. In Conference Proceedings of the sixth International Conference on Advanced Semiconductor Devices and Microsystems (pp. 197–200). http://hdl.handle.net/20.500.12708/69328 ( reposiTUm)

Heer, M., Bychikhin, S., Dubec, V., Pogany, D., Gornik, E., Zullino, L., Andreini, A., & Meneghesso, G. (2006). Analysis of triggering behavior of low voltage BCD single and multi-finger gc-NMOS ESD protection devices. In Proceedings of the EOS/ESD Symposium 2006 (pp. 275–284). http://hdl.handle.net/20.500.12708/69372 ( reposiTUm)

Kuzmik, J., Bychikhin, S., Pichonat, E., Gaquière, C., Morvan, E., & Pogany, D. (2006). Influence of surface trapping on determination of electron saturation velocity in AlGaN/GaN structure. In Book of Abstracts (p. 307). http://hdl.handle.net/20.500.12708/69385 ( reposiTUm)

Kuzmik, J., Bychikhin, S., Lossy, R., Würfl, H.-J., di Forte Poisson, M.-A., Teyssier, J.-P., Gaquière, C., Kohn, E., & Pogany, D. (2006). Thermal boundary resistance between GaN layer and different substrates determined by transient electrical and optical methods. In Book of Abstracts (p. 306). http://hdl.handle.net/20.500.12708/69386 ( reposiTUm)

Reggiani, S., Gnani, E., Rudan, M., Baccarani, G., Bychikhin, S., Kuzmik, J., Pogany, D., Gornik, E., Denison, M., Jensen, N., Groos, G., & Stecher, M. (2006). Experimental investigation on carrier dynamics at the thermal breakdown. In Book of Abstracts (pp. 366–367). http://hdl.handle.net/20.500.12708/69383 ( reposiTUm)

Cico, K., Kuzmik, J., Gregusova, D., Lalinsky, T., Pogany, D., & Fröhlich, K. (2006). Optimization and performance of Al2O3/GaN metal-oxide-semiconductor structures. In Book of Abstracts (pp. 209–210). http://hdl.handle.net/20.500.12708/69384 ( reposiTUm)

Kuzmik, J., Carlin, J.-F., Kostopoulos, A., Konstantinidis, G., Pozzovivo, G., Georgakilas, A., & Pogany, D. (2006). Gate-lag and drain-lag effects in InAlN/GaN and GaN/InAlN/GaN HEMTs. In Technical Digest (p. 302). http://hdl.handle.net/20.500.12708/69388 ( reposiTUm)

Kuzmik, J., Bychikhin, S., & Pogany, D. (2006). Electrical and thermal transient effects in GaN-based HEMT devices. In Book of Abstracts (pp. 15–16). http://hdl.handle.net/20.500.12708/69387 ( reposiTUm)

Rudan, M., Reggiani, S., Gnani, E., Baccarani, G., Corvasce, C., Ciappa, M., Stecher, M., Pogany, D., & Gornik, E. (2006). Physical Models for Smart-Power Devices. In Proceedings of the International Conference on Mixed Design of Integrated Circuits and Systems (pp. 28–33). http://hdl.handle.net/20.500.12708/69404 ( reposiTUm)

Pichonat, E., Kuzmik, J., Bychikhin, S., Pogany, D., Poisson, M. A., Grimbert, B., & Gaquière, C. (2006). Temperature analysis of AlGaN/GaN High-Electron- Mobility Transistors using micro-Raman scattering spectroscopy and Transient Interferometric Mapping. In Proceedings of the first European Microwave Integrated Circuits Conference (pp. 54–57). http://hdl.handle.net/20.500.12708/69406 ( reposiTUm)

Kuzmik, J., Carlin, J.-F., Kostopoulos, T., Konstantinidis, G., Georgakilas, A., & Pogany, D. (2005). Technology, Properties and Limitations of State-of-the -art InAlN/GaN HEMTs. In Device Research Conference (pp. 57–58). http://hdl.handle.net/20.500.12708/68527 ( reposiTUm)

Kuzmik, J., Bychikhin, S., neuburger, M., Dadgar, A., Blaho, M., Krost, A., Kohn, E., & Pogany, D. (2005). Transient Self-Heating Effects in AlgaN/GaN HEMTs. In 47th Annual TMS Electronic Materials Conference (p. 86). http://hdl.handle.net/20.500.12708/68528 ( reposiTUm)

Kuzmik, J., Bychikhin, S., Dubec, V., Blaho, M., Marso, M., Kordos, P., Suski, T., Bockowski, M., Grzegory, I., & Pogany, D. (2005). Characterization of III-Nitride Group Semiconductors and Devices Using Optical Methods. In Compound Semiconductor Devices and Integrated Circuits (pp. 61–62). http://hdl.handle.net/20.500.12708/68526 ( reposiTUm)

Bychikhin, S., Vandamme, L. K. J., Kuzmik, J., Meneghesso, G., Levada, S., Zanoni, E., & Pogany, D. (2005). Accelerated Aging of GaN Light Emitting Diodes Studied by 1/f and RTS Noise. In 18th International Conference on Noise and Fluctuations (ICNF) (pp. 709–712). http://hdl.handle.net/20.500.12708/68896 ( reposiTUm)

Reggiani, S., Gnani, E., Rudan, M., Baccarani, G., Bychikhin, S., Kuzmik, J., Pogany, D., Gornik, E., Denison, M., Jensen, N., Groos, G., & Stecher, M. (2005). Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments. In Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments (pp. 411–414). http://hdl.handle.net/20.500.12708/68768 ( reposiTUm)

Rodin, P., & Pogany, D. (2005). Theory of travelling filaments in bistable semiconductors. In Book of Abstracts (pp. 33–34). http://hdl.handle.net/20.500.12708/68771 ( reposiTUm)

Pogany, D., Bychikhin, S., Kuzmik, J., Gornik, E., Denison, M., Jensen, N., Stecher, M., Rodin, P., & Groos, G. (2005). Observation of travelling current filaments in semiconductor devices using transient interferometric mapping. In Book of Abstracts Europhysics Conference Series (pp. 55–56). http://hdl.handle.net/20.500.12708/68770 ( reposiTUm)

Hanreich, G., Bychikhin, S., Pogany, D., Marso, M., Kordos, P., & Nicolics, J. (2005). Thermal Simulation and Charakterization of AlGaN/GaN/Si High Electron Mobility Transistors. In ISSE 2005 - 28th International Spring Seminar on Electronics Technology (pp. 106–107). Österreichischer Verband für Elektrotechnik, Wien. http://hdl.handle.net/20.500.12708/68806 ( reposiTUm)

Kuzmik, J., Blaho, M., Pogany, D., Gornik, E., Alam, A., Dikme, Y., Heuken, M., Javorka, P., Marso, M., & Kordos, P. (2003). Backgating, high-current and breakdown characterisation of AlGaN/GaN HEMTs on silicon substrates. In Proc. ESSDERC’03 (pp. 319–322). http://hdl.handle.net/20.500.12708/68425 ( reposiTUm)

Denison, M., Blaho, M., Silber, D., Joos, J., Jensen, N., Stecher, M., Dubec, V., Pogany, D., & Gornik, E. (2003). Hot spot dynamics in quasi vertical DMOS under ESD stress. In Proceedings of ISPSD (pp. 80–83). http://hdl.handle.net/20.500.12708/68426 ( reposiTUm)

Pogany, D., Bychikhin, S., Dubec, V., Blaho, M., Litzenberger, M., Kuzmik, J., Pflügl, C., Strasser, G., & Gornik, E. (2003). Transient interferometric mapping of temperature and free carriers in semiconductor devices. In 2003 IEEE LEOS Annual Meeting Conference Proceedings (pp. 666–667). http://hdl.handle.net/20.500.12708/68424 ( reposiTUm)

Abermann, S., Ostermaier, C., Pozzovivo, G., Kuzmik, J., Bethge, O., Henkel, C., Strasser, G., Pogany, D., Giesen, C., Heuken, M., Kohn, E., Alomari, M., & Bertagnolli, E. (2009). Atomic Layer Deposition of high-k oxides on InAlN/GaN-based materials. In ECS transactions (pp. 123–129). The Electrochemical Society. http://hdl.handle.net/20.500.12708/26692 ( reposiTUm)

Stabentheiner M, Novak M, Taylor, A. A., Knuuttila L., Jamnig A., Pogany, D., & Ostermaier, C. (2024, November 7). Investigation of electrically active dislocations in quasi-vertical GaN-on-Si diodes [Conference Presentation]. International Workshop on Nitride Semiconductors (IWN 2024), O’ahu, United States of America (the). ( reposiTUm)

Krainer, R., Jomar, H. E., Karaca, H., Pogany, D., Holland, S., Ritter, H.-M., & Kumar, V. (2023, May 11). IV hysteresis in SCR due to interaction of bulk and surface current paths [Conference Presentation]. International Electrostatic Discharge Workshop (IEW) 2023, Tutzing, Germany. http://hdl.handle.net/20.500.12708/177545 ( reposiTUm)

Jomar, H. E., Karaca, H., Krainer, R., & Pogany, D. (2023, May 8). Compact modeling of sequential finger triggering in multi-finger SCRs using RC coupling [Poster Presentation]. International Electrostatic Discharge Workshop (IEW) 2023, Tutzing, Germany. ( reposiTUm)

Pogany, D. (2023, May 3). Field effect transistors based on III-nitride heterostructures for power switching applications [Presentation]. AMN Seminar Series 2023, Brno, Czechia. ( reposiTUm)

Stabentheiner, M., Diehle, P., Altmann, F., Hübner, S., Lejoyeux, M., Taylor, A. A., Wieland, D., Pogany, D., & Ostermaier, C. (2023, October 4). Test concept for a direct correlation between dislocations and the intrinsic degradation of lateral PIN diodes in GaN-on-Si under reverse bias [Conference Presentation]. 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2023), Toulouse, France. http://hdl.handle.net/20.500.12708/190229 ( reposiTUm)

Karaca, H., Fleury, C., Holland, S., Ritter, H.-M., Krainer, R., Kumar, V., Notermans, G., & Pogany, D. (2021). Triggering of multi-finger and multi-segment SCRs near the holding voltage studied by emission microscopy under DC conditions. International Electrostatic Discharge workshop (IEW) 2021, Unknown. http://hdl.handle.net/20.500.12708/91348 ( reposiTUm)

Kumar, V., Karaca, H., Holland, S., Ritter, H.-M., & Pogany, D. (2021). Influencing SCR Holding Current by Segmentation Topology. International Electrostatic Discharge workshop (IEW) 2021, Italy. http://hdl.handle.net/20.500.12708/91347 ( reposiTUm)

Lambert, N., Taylor, A., Hubik, P., Bulir, J., More-Chevalier, J., Karaca, H., Fleury, C., Pogany, D., & Mortet, V. (2019). Modelling I-V characteristics of boron-doped diamond at high electric field including self-heating effect. 30th International Conference on diamond and carbon materials, Sevilla, Spain. http://hdl.handle.net/20.500.12708/91209 ( reposiTUm)

Padovan, V., Koller, C., Pobegen, G., Ostermaier, C., & Pogany, D. (2019). Stress and recovery dynamics of drain current in GaN HD-GIT submitted to DC semi-on stress. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, Netherlands (the). http://hdl.handle.net/20.500.12708/91218 ( reposiTUm)

Taylor, A., Lambert, N., Hubik, P., Bulir, J., Moris-Chevalier, J., Karaca, H., Fleury, C., Voves, J., Soban, Z., Pogany, D., & Mortet, V. (2019). Experimental and modelled I-V characteristics of boron-doped diamond at high electric fields including self-heating effect. MRS Fall Meeting, Boston, USA, Austria. http://hdl.handle.net/20.500.12708/91271 ( reposiTUm)

Fleury, C., Simbürger, W., & Pogany, D. (2019). Effect of TLP rise time on ESD failure modes of collector-base junction of SiGe heterojunction bipolar transistors. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, Netherlands (the). http://hdl.handle.net/20.500.12708/91226 ( reposiTUm)

Pogany, D. (2019). Effects of interface and buffer defects on performance limitations and reliability of GaN HFETs. Seminarvortrag am Ioffe Physicotechnical Institute of Russian Academy of Sciences, St. Petersburg, Russian Federation (the). http://hdl.handle.net/20.500.12708/91225 ( reposiTUm)

Ostermaier, C., Lagger, P. W., Reiner, M., Pobegen, G., Pogany, D., Prechtl, G., Detzel, T., & Häberlen, O. (2019). The role of defects on reliability aspects in GaN power devices. IEEE International Integrated Reliability Workshop (IIRW), Fallen Leaf Lake, CA, United States of America (the). http://hdl.handle.net/20.500.12708/91220 ( reposiTUm)

Koller, C., Pobegen, G., Ostermaier, C., & Pogany, D. (2018). Trap-related localized breakdown in carbon-doped GaN. International Conference on Physics of Semiconductor (ICPS), Wien, Österreich, Austria. http://hdl.handle.net/20.500.12708/91092 ( reposiTUm)

Ostermaier, C., Lagger, P. W., Reiner, M., Koller, C., Pobegen, G., & Pogany, D. (2018). Dielectrics for GaN and GaN as dielectric: The role of interface and bulk defects. Workshop on Dielectrics in Microelectronics (WODIM), Catania, Italy. http://hdl.handle.net/20.500.12708/91090 ( reposiTUm)

Notermans, G., Ritter, H.-M., Holland, S., & Pogany, D. (2018). A physical approach to dynamic clamp modeling. IEW 2018, Oud-Turnhout, Belgium. http://hdl.handle.net/20.500.12708/91062 ( reposiTUm)

Cecchini, R., Selmo, S., Wiemer, C., Fanciulli, M., Rotunno, E., Lazzarini, L., Rigato, M., Pogany, D., Lugstein, A., & Longo, M. (2018). In-doped Sb nanowires grown by MOCVD for high speed phase change memories. Materials for advanced metallizations (MAM), Milan, Italy. http://hdl.handle.net/20.500.12708/91091 ( reposiTUm)

Pogany, D. (2018). Analysis of nanosecond time scale current flow dynamics in semiconductor devices with S-shape current-voltage characteristics. Seminar Czech Academy of Sciences, Prag, Czechia. http://hdl.handle.net/20.500.12708/91042 ( reposiTUm)

Koller, C., Pobegen, G., Ostermaier, C., & Pogany, D. (2018). The role and mechanisms of carbon in insulating GaN buffers. International workshop on nitride semiconductors (IWN), Kanazawa, Japan. http://hdl.handle.net/20.500.12708/91093 ( reposiTUm)

Koller, C., Pobegen, G., Ostermaier, C., Huber, M., & Pogany, D. (2017). Leakage and voltage blocking behavior of carbon-doped GaN buffer layers. Workshop on Compound Semiconductor Devices and Integrated Circuits  (WOCSDICE), Cardiff, Unided Kingdom, Austria. http://hdl.handle.net/20.500.12708/90941 ( reposiTUm)

Wiemer, C., Selmo, S., Cecchini, R., Cecchi, S., Fanciulli, M., Rotunno, E., Lazzarini, L., Rigato, M., Pogany, D., Lugstein, A., & Longo, M. (2017). In-based chalcogenide nanowires for ultra-scalded phase change memory applications. International Interconnect Technology and Materials for Advanced Metallization Conference (IITC/MAM), Grenoble, France. http://hdl.handle.net/20.500.12708/90938 ( reposiTUm)

Cecchini, R., Selmo, S., Cecchi, S., Wiemer, C., Fanciulli, M., Rotunno, E., Lazzarini, L., Rigato, M., Pogany, D., Lugstein, A., & Longo, M. (2017). Synthesis and electrical analysis of phase change In3Sb1Te2 nanowire-based devices with low power switching. European Phase-Change and Ovonics Symposium, Aachen, Germany. http://hdl.handle.net/20.500.12708/90940 ( reposiTUm)

Ostermaier, C., Lagger, P. W., Reiner, M., Grill, A., Stradiotto, R., Pobegen, G., Grasser, T., Pietschnig, R., & Pogany, D. (2017). Review of bias-temperature instabilities at the III-N/dielectric interface. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, Netherlands (the). http://hdl.handle.net/20.500.12708/90942 ( reposiTUm)

Fleury, C., Notermans, G., Ritter, H.-M., & Pogany, D. (2017). TIM, EMMI and 3D TCAD analysis of discrete-technology SCRs. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, Netherlands (the). http://hdl.handle.net/20.500.12708/90943 ( reposiTUm)

Koller, C., Pobegen, G., Ostermaier, C., Huber, M., & Pogany, D. (2017). Transient capacitance analysis of thin carbon doped GaN layers. Conference of Nitride Semiconductors (ICNS), Las Vegas, United States of America (the). http://hdl.handle.net/20.500.12708/90939 ( reposiTUm)

Pogany, D. (2016). Noise-based techniques for gas sensing. 4th International Action Workshop on Innovations and Challenges for Air Quality Control Sensors (EuNetAir), Wien, Austria. http://hdl.handle.net/20.500.12708/90783 ( reposiTUm)

Pogany, D. (2016). GaN device and characterization activities at TU Wien. Seminar at Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia. http://hdl.handle.net/20.500.12708/90784 ( reposiTUm)

Simbürger, W., Rigato, M., Fleury, C., Pogany, D., Willemen, J., Vendt, V., Schwingshackl, T., & D´Arbonneau, A. (2016). ESD Protection Devices and Technologies: Recent Advances and Trends. International Electrostatic Discharge workshop (IEW), Villard de Lans, France. http://hdl.handle.net/20.500.12708/90773 ( reposiTUm)

Rigato, M., Fleury, C., Pogany, D., & Simbürger, W. (2015). Transient interferometric mapping technique (TIM): an effective tools to understand ESD and device breakdown. Infineon University Evening 2015, Neubiberg, Germany, EU. http://hdl.handle.net/20.500.12708/90607 ( reposiTUm)

Pogany, D. (2015). Use of TIM technique to probe free carrier and thermal dynamics in ESD protection devices. NXP Hamburg, Hamburg, EU. http://hdl.handle.net/20.500.12708/90609 ( reposiTUm)

Ostermaier, C., Lagger, P. W., Prechtl, G., Grill, A., Grasser, T., & Pogany, D. (2015). The role of electron transport in the charge trapping at the III-N/dielectric interface in AlGaN/GaN MIS-HEMT structures. Semiconductor Interface Specialists Conference, Arlington, VA, USA, Non-EU. http://hdl.handle.net/20.500.12708/90593 ( reposiTUm)

Fleury, C., Capriotti, M., Rigato, M., Hilt, O., Würfl, J., Derluyn, J., Steinhauer, S., Köck, A., Strasser, G., & Pogany, D. (2015). High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/90610 ( reposiTUm)

Fleury, C., Capriotti, M., Rigato, M., Hilt, O., Würfl, J., Derluyn, J., Strasser, G., & Pogany, D. (2015). Vertical breakdown in AlGaN/GaN high electron mobility transistors. Gemeinsame Jahrestagung 2015 der ÖPG, SPS, ÖGA und SSAA in Wien, Wien, Austria. http://hdl.handle.net/20.500.12708/90608 ( reposiTUm)

Capriotti, M., Bahat-Treidel, E., Fleury, C., Bethge, O., Brunner, F., Hilt, O., Würfl, J., Pogany, D., & Strasser, G. (2015). High performances normally-off AlGaN/GaN True-MOS with sub-micrometric gate features. Gemeinsame Jahrestagung 2015 der ÖPG, SPS, ÖGA und SSAA in Wien, Wien, Austria. http://hdl.handle.net/20.500.12708/90530 ( reposiTUm)

Rigato, M., Fleury, C., Heer, M., Simbürger, W., & Pogany, D. (2015). ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/90552 ( reposiTUm)

Lagger, P. W., Reiner, M., Denifl, G., Stadtmüller, M., Pogany, D., & Ostermaier, C. (2014). Understanding the Fundamental Limitations for the Improvement of Forward Gate Bias induced Vth Drift Stability of GaN based MIS-HEMTs. International Workshop on Nitride Semiconductors (IWN 2014), Wroclaw, EU. http://hdl.handle.net/20.500.12708/90364 ( reposiTUm)

Capriotti, M., Lagger, P. W., Fleury, C., Stradiotto, R., Oposich, M., Ostermaier, C., Strasser, G., & Pogany, D. (2014). Effect of III-N Barrier Resistance on CV Characteristics in GaN-based MOSHEMTs in Spill-Over Regime. International Workshop on Nitride Semiconductors (IWN 2014), Wroclaw, EU. http://hdl.handle.net/20.500.12708/90363 ( reposiTUm)

Ostermaier, C., Lagger, P. W., Reiner, M., Pobegen, G., & Pogany, D. (2014). Is PBTI at the dielectric/III‐N interface limited by interface traps? WOCSEMMAD, Napa Valley, USA, Non-EU. http://hdl.handle.net/20.500.12708/90353 ( reposiTUm)

Pogany, D. (2014). GaN electronics and optoelectronics from ESD perspective. International Electrostatic Discharge workshop (IEW), Villard de Lans, France, EU. http://hdl.handle.net/20.500.12708/90354 ( reposiTUm)

Pogany, D. (2014). GaN HEMT/MIS-HEMT technology and device reliability activities at TU Vienna. MINATEC, Grenoble, France, EU. http://hdl.handle.net/20.500.12708/90355 ( reposiTUm)

Pogany, D. (2014). GaN HEMT technology and device reliability activities at TU Vienna. Nanotechnology Institute, INSA de Lyon, Villeurbanne, France, EU. http://hdl.handle.net/20.500.12708/90356 ( reposiTUm)

Fleury, C., Capriotti, M., Hilt, O., Würfl, J., Strasser, G., & Pogany, D. (2014). Temperature extraction in Normally-Off AlGaN/GaN HEMTs using Transient Interferometric Mapping0. WOCSDICE-EXMATEC 2014, Delphi, EU. http://hdl.handle.net/20.500.12708/90376 ( reposiTUm)

Capriotti, M., Alexewicz, A., Fleury, C., Derluyn, J., Visalli, D., Pogany, D., & Strasser, G. (2014). Different layer designs for normally-off GaN HEMTs with ultrathin AlN barrier, GaN cap and in situ SiN passivation. WOCSDICE-EXMATEC 2014, Delphi, EU. http://hdl.handle.net/20.500.12708/90377 ( reposiTUm)

Steinhauer, S., Pogany, D., Seidl, C., Mutinati, G. C., Maier, T., & Köck, A. (2014). Low-frequency noise characterization of single CuO nanowire gas sensors. 1st International Conference on Functional Integrated nano Systems, Graz, Austria. http://hdl.handle.net/20.500.12708/90422 ( reposiTUm)

Capriotti, M., Bethge, O., Fleury, C., Alexewicz, A., Bertagnolli, E., Pogany, D., & Strasser, G. (2014). Gate dielectric in GaN-based Metal Oxide Semiconductor High Electron Mobility Transistors: an overview on technology, issues and limitations. FBH-Institutskolloquium, Berlin, EU. http://hdl.handle.net/20.500.12708/90418 ( reposiTUm)

Pogany, D. (2014). Probing the current flow, thermal and free-carrier dynamics in ESD protection devices during ESD stress by TIM technique. Taiwan ESD and Reliability Conference, Hsinchu City, Taiwan, Non-EU. http://hdl.handle.net/20.500.12708/90421 ( reposiTUm)

Fleury, C., Rigato, M., Simbürger, W., & Pogany, D. (2014). Transient Interferometric Mapping of SiGe-base RF BJTs in 0,35 μm B7HFV technology under ESD stress. Infineon University Evening 2014, München, EU. http://hdl.handle.net/20.500.12708/90442 ( reposiTUm)

Rigato, M., Fleury, C., Simbürger, W., & Pogany, D. (2014). ESD characterization of RF-NMOS transistors in 0.13 μm CMOS technology with transient interferometric mapping. Infineon University Evening 2014, München, EU. http://hdl.handle.net/20.500.12708/90443 ( reposiTUm)

Rotter, S., Liertzer, M., Hisch, T., Brandstetter, M., Tureci, H., Deutsch, C., Klang, P., Pogany, D., Schöberl, J., Strasser, G., & Unterrainer, K. (2013). Controlling a Laser by Spatial Variation of the Pump Profile. Ferdinand Braun Institute Colloquium, Berlin, EU. http://hdl.handle.net/20.500.12708/130396 ( reposiTUm)

Rotter, S., Liertzer, M., Brandstetter, M., Hisch, T., Deutsch, C., Pogany, D., Mintert, F., Ge, L., Tureci, H., Cerjan, A., Stone, A. D., Strasser, G., & Unterrainer, K. (2013). Pump-controlled exceptional points and random laser emission. Advances in Quantum Chaotic Scattering: From (Non-)Linear Waves to Few-Body Systems, Dresden, EU. http://hdl.handle.net/20.500.12708/129505 ( reposiTUm)

Rotter, S., Liertzer, M., Hisch, T., Pogany, D., Mintert, F., Ge, L., Stone, A. D., Tureci, H., & Cerjan, A. (2013). Controlling a laser by spatial variation of the pump profile. GMe Workshop 2013, Wien, Austria. http://hdl.handle.net/20.500.12708/130303 ( reposiTUm)

Rotter, S., Liertzer, M., Hisch, T., Ge, L., Cerjan, A., Stone, A. D., Tureci, H., Mintert, F., & Pogany, D. (2013). Pump-controlled exceptional points and random laser emission. Seminarvortrag am Atominstitut, Wien, Austria. http://hdl.handle.net/20.500.12708/130277 ( reposiTUm)

Liertzer, M., Hisch, T., Esterhazy, S., Mintert, F., Pogany, D., Melenk, J. M., & Rotter, S. (2013). New solution strategies for the steady-state ab-initio laser theory and applications to random lasers. MASOMO 2013, Berlin, EU. http://hdl.handle.net/20.500.12708/130278 ( reposiTUm)

Rotter, S., Ambichl, P., Liertzer, M., Hisch, T., Libisch, F., Pogany, D., & Mintert, F. (2013). Complex scattering and lasing photonic micro-structures. Seminar talk, Brunel University, London, EU. http://hdl.handle.net/20.500.12708/130331 ( reposiTUm)

Rotter, S., Liertzer, M., Hisch, T., Pogany, D., Mintert, F., Brandstetter, M., & Unterrainer, K. (2013). Pump-Controlled Exceptional Points and Random Laser Emission. Batsheva de Rothschild Seminar (Israel Science Foundation workshop), Ein Gedi, Israel, Non-EU. http://hdl.handle.net/20.500.12708/130294 ( reposiTUm)

Rotter, S., Liertzer, M., Hisch, T., Pogany, D., Mintert, F., Ge, L., Stone, A. D., Tureci, H., & Cerjan, A. (2013). Controlling a laser by spatial variation of the pump profile. Theorieseminar, Uni Duisburg-Essen, Duisburg, EU. http://hdl.handle.net/20.500.12708/130307 ( reposiTUm)

Rotter, S., Ambichl, P., Liertzer, M., Hisch, T., Doppler, J., Libisch, F., & Pogany, D. (2013). Taming waves in theory and experiment. Physikalisches Kolloquium, Universität Graz / Technische Universität Graz, Graz, Österreich, Austria. http://hdl.handle.net/20.500.12708/130309 ( reposiTUm)

Rotter, S., Liertzer, M., Hisch, T., Ge, L., Cerjan, A., Stone, A. D., Tureci, H., Pogany, D., & Mintert, F. (2013). Pump-controlled exceptional points and random laser emission. Institutssseminar Institut Langevin, Paris, EU. http://hdl.handle.net/20.500.12708/130276 ( reposiTUm)

Pogany, D. (2013). Physics and reliability of GaN-base HFETs. Intel Mobile Telecommunications, München, Deutschland, EU. http://hdl.handle.net/20.500.12708/90209 ( reposiTUm)

Pogany, D., Fleury, C., Sultan, S. M., Ashburn, P., Chong, H. M. H., & Vandamme, L. K. J. (2013). Low frequency noise and breakdown analysis of top-down fabricated ZnO nanowire transistors. European Materials Research Society (EMRS), Strasbourg, France, EU. http://hdl.handle.net/20.500.12708/90207 ( reposiTUm)

Meneghini, M., Cibin, G., Bertin, M., Carraro, S., Marconi, S., Marioli, M., la Grassa, M., Ferretti, M., Bychikhin, S., Pogany, D., Strasser, G., Zanoni, E., & Meneghesso, G. (2013). Comparison of breakdown characteristics of AlGaN/GaN HEMTs in voltage and current controlled mode: electrical and optical characterization. Topical workshop on heterostructure microelectronics (TWHM), Hakodate, Japan, Non-EU. http://hdl.handle.net/20.500.12708/90208 ( reposiTUm)

Alexewicz, A., Capriotti, M., Bethge, O., Visalli, D., Derluyn, J., Pogany, D., Bertagnolli, E., & Strasser, G. (2013). Normally-off GaN MOSHEMTs with thin barrier on Si substrate. ÖPG-Jahrestagung, Innsbruck, Austria, Austria. http://hdl.handle.net/20.500.12708/90119 ( reposiTUm)

Fleury, C., Zhytnytska, R., Bychikhin, S., Cappriotti, M., Hilt, O., Visalli, D., Meneghesso, G., Zanoni, E., Würfl, J., Derluyn, J., Strasser, G., & Pogany, D. (2013). Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/90135 ( reposiTUm)

Capriotti, M., Alexewicz, A., Bethge, O., Visalli, D., Derluyn, J., Fleury, C., Bertagnolli, E., Pogany, D., & Strasser, G. (2013). Role of In-Situ Grown SiN Passivation for E-Mode AlGaN/GaN MOSHEMTS on silicon substrate for efficient power converters. Italien Crystal Growth, Parma, Italien, EU. http://hdl.handle.net/20.500.12708/90136 ( reposiTUm)

Alexewicz, A., Marko, P., Alomari, M., Behmenburg, H., Giesen, C., Heuken, M., Pogany, D., Kohn, E., & Strasser, G. (2012). Performance Enhancement of InAlGaN/AlN GaN-HEMTs by using In-Situ SiN Passivation. 76. Jahrestagung der DPG und DPG-Frühjahrstagung, Berlin, Deutschland, EU. http://hdl.handle.net/20.500.12708/89889 ( reposiTUm)

Ostermaier, C., Lagger, P. W., Alomari, M., Herfurth, P., Maier, D., Alexewicz, A., di Forte Poisson, M.-A., Delage, S. L., Strasser, G., Pogany, D., & Kohn, E. (2012). Reliability Investigation of the Degradation of the Surface Passivation of InAlN/GaN HEMTs using a Dual Gate Structure. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/89920 ( reposiTUm)

Alexewicz, A., Ostermaier, C., Henkel, C., Bethge, O., Carlin, J.-F., Gonschorek, M., Grandjean, N., Pogany, D., Bertagnolli, E., & Strasser, G. (2012). E-Mode InAlN/AlN-GaN MOS-HEMTs on Si Substrates. Microelectronics Conference, Wien, Austria. http://hdl.handle.net/20.500.12708/89935 ( reposiTUm)

Alexewicz, A., Marko, P., Alomari, M., Behmenburg, H., Giesen, C., Heuken, M., Pogany, D., Kohn, E., & Strasser, G. (2012). InAlGaN/AlN GaN-HEMTs with In-Situ SiN Passivation. International Conference on Physics of Semiconductor (ICPS), Wien, Österreich, Austria. http://hdl.handle.net/20.500.12708/89912 ( reposiTUm)

Rossi, S., Alomari, M., Kohn, E., Zhang, E., Weaver, J., Bychikhin, S., Pogany, D., Carlin, J.-F., & Grandjean, N. (2012). Thermal Analysis of NCD Heat-Spreading Films on InAlN/GaN HEMTs. New Diamond and Nano Carbons Conference (NDNC), San Juan, Puerto Rico, Non-EU. http://hdl.handle.net/20.500.12708/89978 ( reposiTUm)

Meneghesso, G., Meneghini, M., Zanandrea, A., Rampazzo, F., Stocco, A., Bertin, M., Pogany, D., & Zanoni, E. (2012). Evidence for breakdown luminescence in AlGaN/GaN HEMTs. International Workshop on Nitride Semiconductors 2012 (INW), Sapporo, Japan, Non-EU. http://hdl.handle.net/20.500.12708/89979 ( reposiTUm)

Marko, P., Meneghini, M., Bychikhin, S., Marcon, D., Meneghesso, G., Zanoni, E., & Pogany, D. (2012). IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/89980 ( reposiTUm)

Alexewicz, A., Marko, P., Alomari, M., Behmenburg, H., Giesen, C., Heuken, M., Pogany, D., Kohn, E., & Strasser, G. (2012). InAlGaN/AlN GaN-HEMTs with In-Situ SiN Passivation. GMe Forum 2012, Wien, Austria. http://hdl.handle.net/20.500.12708/89958 ( reposiTUm)

Marko, P., Alexewicz, A., Meneghini, M., Meneghesso, G., Zanoni, E., Hilt, O., Würfl, J., Strasser, G., & Pogany, D. (2012). Pre-breakdown current fluctuations and RTS noise in reverse-bias-stressed AlGaN/GaN HEMTs. International Workshop on Nitride Semiconductors 2012 (INW), Sapporo, Japan, Non-EU. http://hdl.handle.net/20.500.12708/89919 ( reposiTUm)

Capriotti, M., Alexewicz, A., Parlar, A., Brunner, A., Andrews, A. M., Pogany, D., & Strasser, G. (2012). Comparison of MOS and Schottky-barrier structure in AlGaN/GaN HEMTs. ÖPG-Jahrestagung, Innsbruck, Austria, Austria. http://hdl.handle.net/20.500.12708/89921 ( reposiTUm)

Alexewicz, A., Ostermaier, C., Henkel, C., Bethge, O., Carlin, J.-F., Gonschorek, M., Grandjean, N., Pogany, D., Bertagnolli, E., & Strasser, G. (2011). Dependence of the threshold voltage on oxide interlayer Thickness in E-mode InAlN/AlN GaN-MOS-HEMTs on Si substrate. ÖPG-Jahrestagung, Innsbruck, Austria, Austria. http://hdl.handle.net/20.500.12708/89629 ( reposiTUm)

Cico, K., Jurkovic, M., Gregusova, D., Kuzmik, J., Alexewicz, A., di Forte Poisson, M.-A., Pogany, D., Strasser, G., Delage, S. L., & Fröhlich, K. (2011). Impact of forming gas annealing on electrical characteristics of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation. Conference of Nitride Semiconductors (ICNS), Las Vegas, USA, Non-EU. http://hdl.handle.net/20.500.12708/89647 ( reposiTUm)

Rhayem, J., Van der Voorde, L., Wieers, A., Heer, M., & Pogany, D. (2011). Wear out analysis in vertical DMOS under repetitive short circuit testing. European Failure Analysis Network, Toulouse, France, EU. http://hdl.handle.net/20.500.12708/89648 ( reposiTUm)

Alexewicz, A., Ostermaier, C., Pozzovivo, G., Schrenk, W., Schmid, M., Toth, L., Pecz, B., Carlin, J.-F., Gonschorek, M., Grandjean, N., Kuzmik, J., Pogany, D., & Strasser, G. (2011). Microstructural and Electrical Analyses of Oxygen Diffusion into Iridium Metal Gates. GMe Forum 2011, Vienna, Austria, Austria. http://hdl.handle.net/20.500.12708/89771 ( reposiTUm)

Kuzmik, J., Ostermaier, C., Alexewicz, A., Carlin, J.-F., Grandjean, N., Dua, C., Delage, S. L., Strasser, G., Pogany, D., & Gornik, E. (2011). Study of electrical performance and degradation of double-heterostructure InAlN/AlN/GaN/AlGaN/GaN transitors. Conference of Nitride Semiconductors (ICNS), Las Vegas, USA, Non-EU. http://hdl.handle.net/20.500.12708/89646 ( reposiTUm)

Pogany, D., Bychikhin, S., Heer, M., Mamanee, W., & Gornik, E. (2011). Application of transient interferometric mapping method for ESD and latch-up analysis. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/89645 ( reposiTUm)

Köck, H., Djelassi, C., de Filippis, S., Nelhiebel, M., Ladurner, M., Glavanovics, M., & Pogany, D. (2011). Improved thermal management of low voltage power devices with optimized bond wire positions. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/89644 ( reposiTUm)

Ostermaier, C., Pozzovivo, G., Carlin, J.-F., Basnar, B., Schrenk, W., Ahn, S., Detz, H., Klang, P., Andrews, A. M., Douvry, Y., Gaquière, C., De Jaeger, J.-C., Toth, L., Pecz, B., Gonschorek, M., Feltin, E., Grandjean, N., Strasser, G., Pogany, D., & Kuzmik, J. (2010). Improvements of High Performance 2-nm-thin InAlN/AlN Barrier Devices by Interface Enfineering. International Conference on Physics of Semiconductor (ICPS), Wien, Österreich, Austria. http://hdl.handle.net/20.500.12708/89313 ( reposiTUm)

Mamanee, W., Johnsson, D., Bychikhin, S., Stecher, M., Esmark, K., Gossner, H., Gornik, E., Rodin, P., & Pogany, D. (2010). Pulse risetime effect on current filamentary modes and interaction of current filaments in ESD protection devices. ESD workshop, Tutzing, Deutschland, EU. http://hdl.handle.net/20.500.12708/89260 ( reposiTUm)

Kuzmik, J., Bychikhin, S., Pichonat, E., Gaquière, C., Tsiakatouras, G., Deligeorgis, G., Georgakilas, A., Balmer, R., & Pogany, D. (2010). Thermal Characterization of MBE-grown GaN/AlGaN/GaN on Single Crystalline Diamond. International Workshop on Nitride Semiconductors 2010, Tampa, Florida, USA, Non-EU. http://hdl.handle.net/20.500.12708/89281 ( reposiTUm)

De Jaeger, J.-C., Gaquière, C., Douvry, Y., Defrance, N., Hoel, V., Delage, S. L., di Forte-Poisson, M. A., Sarazin, N., Morvan, E., Alomari, M., Kohn, E., Dussaigne, A., Carlin, J.-F., Kuzmik, J., Ostermaier, C., & Pogany, D. (2010). Microwave Power Capabilities of InAlN/GaN HEMTs". 4th Microwave and Radar Week MRW-2010 (MIKON 2010), Vilnius, Lithuania, EU. http://hdl.handle.net/20.500.12708/89484 ( reposiTUm)

Aretouli, K. E., Kuzmik, J., Pogany, D., Adikimenakis, A., Kostopoulos, T., Konstantinidis, G., & Georgakilas, A. (2010). Pulsed I-V performance of AlN/GaN HEMTs. 4th Int. Conf. on Micro-Nanoelectronics, Nanotechnologies & MEMs, Athen, Greece, EU. http://hdl.handle.net/20.500.12708/89485 ( reposiTUm)

Aretouli, K. E., Kuzmik, J., Pogany, D., Adikimenakis, A., Kostopoulos, A., Konstantinidis, G., & Georgakilas, A. (2010). Current instabilities in AlN/GaN HEMTs. European Workshop on Heterostructure Technology, Smolenice Castle, Slovakia, Austria. http://hdl.handle.net/20.500.12708/89470 ( reposiTUm)

Podgaynaya, A., Rudolf, R., Elattari, B., Pogany, D., Gornik, E., & Stecher, M. (2010). Single pulse energy capability and failure modes of n- and p- channel LDMOS with thick copper metallization. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/89474 ( reposiTUm)

Bychikhin, S., Haberfehlner, G., Rhayem, J., Vanderstraeten, D., Gillon, R., & Pogany, D. (2010). "Investigation of smart power DMOS devices under repetitive stress conditions using transient thermal mapping and numerical simulation. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/89483 ( reposiTUm)

Mamanee, W., Bychikhin, S., Johnsson, D., Jensen, N., Stecher, M., Gornik, E., & Pogany, D. (2009). Effect of Chip Heating on Thermal Breakdown Occurrence in SPT ESD Protection Devices Subjected to 0.5-1µs Long Current Pulses. International electrostatic discharge workshop, Lake Tahoe, Non-EU. http://hdl.handle.net/20.500.12708/89055 ( reposiTUm)

Pogany, D., Bychikhin, S., Heer, M., Mamanee, W., Dubec, V., Gornik, E., Johnsson, D., Domanski, K., Esmark, K., Stadler, W., Gossner, H., & Stecher, M. (2009). Application of transient interferometric mapping (TIM) technique for analysis of ns time scale thermal and free carrier dynamics in ESD protection devices. Optical localization techniques Workshop, Toulouse, Non-EU. http://hdl.handle.net/20.500.12708/89057 ( reposiTUm)

Pogany, D., Bychikhin, S., Johnsson, D., Esmark, K., Rodin, P., Stecher, M., Gornik, E., & Gossner, H. (2009). Assessing “2D” holding point in ESD protection structures exhibiting 3D behavior using multi-level TLP analysis. International electrostatic discharge workshop, Lake Tahoe, Non-EU. http://hdl.handle.net/20.500.12708/89056 ( reposiTUm)

Ostermaier, C., Pozzovivo, G., Carlin, J.-F., Basnar, B., Schrenk, W., Cico, K., Fröhlich, K., Gonschorek, M., Grandjean, N., Strasser, G., Pogany, D., & Kuzmik, J. (2009). Depletion and Enhancement Mode InAlN/GaN HEMTs for Digital Circuits. International Symposium on Compound Semiconductors (ISCS), Cheju Island, Austria. http://hdl.handle.net/20.500.12708/89062 ( reposiTUm)

Pozzovivo, G., Ostermaier, C., Carlin, J.-F., Gonschorek, M., Grandjean, N., Strasser, G., Pogany, D., & Kuzmik, J. (2009). High-Electric-Field Degradation Effects in Unpassivated InAlN/GaN HEMTs. International Symposium on Compound Semiconductors (ISCS), Cheju Island, Austria. http://hdl.handle.net/20.500.12708/89061 ( reposiTUm)

Köck, H., Kosel, V., Djelassi, C., Glavanovics, M., & Pogany, D. (2009). IR thermography and FEM simulation analysis of on-chip temperature during thermal-cycling power-metal reliability testing using in-situ heated structures. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/89060 ( reposiTUm)

Haberfehlner, G., Bychikhin, S., Dubec, V., Heer, M., Podgaynaya, A., Pfost, M., Stecher, M., Gornik, E., & Pogany, D. (2009). Thermal imaging of smart power DMOS transistors in the thermally unstable regime using a compact transient interferometric mapping system. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/89059 ( reposiTUm)

Ostermaier, C., Pozzovivo, G., Carlin, J.-F., Basnar, B., Schrenk, W., Cico, K., Fröhlich, K., Gonschorek, M., Grandjean, N., Strasser, G., Pogany, D., & Kuzmik, J. (2009). High Performance of Thermally Stable Enhancement-Mode HEMTs on In/AlN/GaN Heterostructures. ÖPG-Jahrestagung, Innsbruck, Austria, Austria. http://hdl.handle.net/20.500.12708/89086 ( reposiTUm)

Pogany, D., Bychikhin, S., Esmark, K., Rodin, P., Johnsson, D., Stecher, M., Gornik, E., & Gossner, H. (2009). Modeling of on-state width spreading and voltage transients in 90nm CMOS SCR. International electrostatic discharge workshop, Lake Tahoe, Non-EU. http://hdl.handle.net/20.500.12708/89108 ( reposiTUm)

Abermann, S., Ostermaier, C., Pozzovivo, G., Kuzmik, J., Bethge, O., Henkel, C., Strasser, G., Pogany, D., Giesen, C., Heuken, M., Alomari, M., Kohn, E., & Bertagnolli, E. (2009). oeAtomic Layer Deposition of High-k Oxides on InAlN/GaN-Based Materials. Meeting of the Electrochemical Society (ECS), Honolulu, Austria. http://hdl.handle.net/20.500.12708/89181 ( reposiTUm)

Ostermaier, C., Ahn, S.-I., Potzger, K., Helm, M., Kalchmair, S., Pogany, D., Lee, J.-H., Hahm, S.-H., & Lee, J.-H. (2008). Realization of Inversion-type GaN MOSFETs with Ar Implantation for Device Isolation. Junior Scientist Conference 2008, Vienna, Austria. http://hdl.handle.net/20.500.12708/88837 ( reposiTUm)

Heer, M., Grombach, P., Heid, A., & Pogany, D. (2008). Hot spot analysis during thermal shutdown of SOI BCDMOS half bridge driver for automotive applications. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/88839 ( reposiTUm)

Pozzovivo, G., Kuzmik, J., Abermann, S., Ostermaier, C., Carlin, J.-F., Gonschorek, M., Feltin, E., Liday, J., Grandjean, N., Bertagnolli, E., Strasser, G., & Pogany, D. (2008). Recent Improvements on InAlN/GaN MOS-HEMTs. GMe Forum 2008, Wien, Austria. http://hdl.handle.net/20.500.12708/88874 ( reposiTUm)

Dubec, V., Bychikhin, S., Pogany, D., Gornik, E., Brodbeck, T., & Stadler, W. (2007). Backside Interferometric Methods for Localization of ESD-Induced Leakage Current and Metal Shorts. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/88637 ( reposiTUm)

Heer, M., Bychikhin, S., Mamanee, W., Pogany, D., Heid, A., Grambach, P., Klaussner, M., Soppa, W., & Ramler, B. (2007). Experimental and numerical analysis of current flow homogeneity in low voltage SOI multi-finger gg-NMOS and NPN ESD protection devices. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/88638 ( reposiTUm)

Bychikhin, S., Swietlik, T., Suski, T., Porowski, S., Perlin, P., & Pogany, D. (2007). Thermal Analysis of InGaN/GaN(GaN substrate) Laser Diodes using Transient Interferometric Mapping. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/88677 ( reposiTUm)

Kuzmik, J., Bychikhin, S., & Pogany, D. (2006). Status and prospects in InAlN/(In)GaN HEMTs and nanosecond thermal analysis of III-Nitride devices. European Microwave Week (EUMW), Manchester, EU. http://hdl.handle.net/20.500.12708/88518 ( reposiTUm)

Pozzovivo, G., Golka, S., Cico, K., Kuzmik, J., Schrenk, W., Strasser, G., & Pogany, D. (2006). Technology of InAlN/(In)GaN - based HEMT’s. Monte Verita´summer School, Wide-banbgap semiconductor quantum structure, Switzerland, Non-EU. http://hdl.handle.net/20.500.12708/88516 ( reposiTUm)

Pogany, D., Kuzmik, J., & Bychikhin, S. (2006). Thermal characterization of high frequency three and two terminal devices. European Microwave Week (EUMW), Manchester, EU. http://hdl.handle.net/20.500.12708/88517 ( reposiTUm)

Heer, M., Dubec, V., Bychikhin, S., Pogany, D., Gornik, E., Frank, M., Konrad, A., & Schulz, J. (2006). Analysis of triggering behaviour of high voltage CMOS LDMOS clamps and SCRs during ESD induced latch-up. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/88522 ( reposiTUm)

Heer, M., Dubec, V., Blaho, M., Bychikhin, S., Pogany, D., Gornik, E., Denison, M., Stecher, M., & Groos, G. (2005). Automated setup for thermal imaging and electrical degradation study of power DMOS devices. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/88304 ( reposiTUm)

Dubec, V., Bychikhin, S., Blaho, M., Heer, M., Pogany, D., Gornik, E., Denison, M., Jensen, N., Stecher, M., & Groos, G. (2004). Multiple-time-instant 2D thermal mapping during a single ESD event. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/88226 ( reposiTUm)

Bychikhin, S., Dubec, V., Pogany, D., Gornik, E., Graf, M., Dudek, V., & Soppa, W. (2004). Transient interferometric mapping of smart power SOI ESD protection devices under TLP and vf-TLP stress. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/88227 ( reposiTUm)

Pogany, D., Bychikhin, S., Pflügl, C., Dubec, V., Kuzmik, J., Blaho, M., Litzenberger, M., Strasser, G., & Gornik, E. (2003). Thermal mapping of semiconductor devices with nanosecond resolution. European Microwave week 2003, GAAS conference, München, Deutschland, Austria. http://hdl.handle.net/20.500.12708/88032 ( reposiTUm)

Dubec, V., Bychikhin, S., Blaho, M., Pogany, D., Gornik, E., Willemen, J., Qu, N., Wilkening, W., Zullino, L., & Andreini, A. (2003). A dual-beam Michelson interferometer for investigation of trigger dynamics in ESD protection devices under very fast TLP stress. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/88031 ( reposiTUm)

Pflügl, C., Litzenberger, M., Schrenk, W., Anders, S., Pogany, D., Gornik, E., & Strasser, G. (2003). Thermal Dynamics of CaAs-based quantum cascade lasers. Photonics West, San Jose, Cal. USA, Non-EU. http://hdl.handle.net/20.500.12708/87992 ( reposiTUm)

Kuzmik, J., Pogany, D., Blaho, M., Gornik, E., Javorka, P., Marso, M., & Kordos, P. (2003). Breakdown and degradation processes in AlGaN/GaN HEMTs during electrostatic discharge. Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Malaga, Spain, EU. http://hdl.handle.net/20.500.12708/88006 ( reposiTUm)

Pflügl, C., Litzenberger, M., Schrenk, W., Anders, S., Pogany, D., Gornik, E., & Strasser, G. (2002). Interferometric Temperature Mapping of GaAs-based Quantum Cascade Laser Ridges. 29th Int. Symp. on Comp. Semicond. (ISCS 2002), Lausanne, Switzerland, Austria. http://hdl.handle.net/20.500.12708/87924 ( reposiTUm)

Stadler, W., Esmark, K., Gossner, H., Streibl, M., Wendel, M., Fichtner, W., Litzenberger, M., Pogany, D., & Gornik, E. (2002). Device Simulation and Backside Laser Interferometry - Powerful Tools for ESD Protection Development. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/87909 ( reposiTUm)

Blaho, M., Pogany, D., Gornik, E., Zullino, L., & Andreini, A. (2002). Expermental ans simulation analysis of a BCD ESD protection element under the DC and TLP stress conditions. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/87908 ( reposiTUm)

Pogany, D., Kuzmik, J., Darmo, J., Litzenberger, M., Bychikhin, S., Unterrainer, K., Gornik, E., Mozolova, Z., Hascik, S., & Lalinsky, T. (2002). Electrical fied mapping in InGaPHEMTs and GaAs teraherz emitters using backside infrared OBIC technique. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/87912 ( reposiTUm)

Litzenberger, M., Pichler, R., Bychikhin, S., Pogany, D., Esmark, K., Gossner, H., & Gornik, E. (2001). Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection structures. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/87846 ( reposiTUm)

Bychikhin, S., Litzenberger, M., Pichler, R., Pogany, D., Gornik, E., Groos, G., & Stecher, M. (2001). Thermal and free carrier laser interferometric mapping and failure analysis of anti-serial smart power ESD protection structures. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/87847 ( reposiTUm)

Litzenberger, M., Esmark, K., Pogany, D., Fürböck, C., Gossner, H., Gornik, E., & Fichtner, W. (2000). Study of tiggering inhomogeneities in gg-nMOS ESD protection devices via thermal mapping using bachside laser interferometry. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/87730 ( reposiTUm)

Pogany, D., Esmark, K., Litzenberger, M., Fürböck, C., Gossner, H., & Gornik, E. (2000). Bulk and surface degradation mode in 0.35um technology gg-nMOS ESD protection devices. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/87731 ( reposiTUm)

Fürböck, C., Esmark, K., Litzenberger, M., Pogany, D., Groos, G., Zelsacher, R., Stecher, M., & Gornik, E. (2000). Thermal and free carrier concentration mapping during ESD event in Smart Power ESD protection devices using a modified laser interferometry technique. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/87727 ( reposiTUm)

Pogany, D. (2007). Report on ESD measurements by TIM to LAAS. http://hdl.handle.net/20.500.12708/31491 ( reposiTUm)

Pogany, D. (2007). Report on ESD measurements by TIM to Texas Instruments. http://hdl.handle.net/20.500.12708/31490 ( reposiTUm)

Pogany, D. (2007). Report on ESD measurements by TIM to Atmel. http://hdl.handle.net/20.500.12708/31489 ( reposiTUm)

Pogany, D. (2007). Report on latch-up TIM measurements for ZETEX. http://hdl.handle.net/20.500.12708/31494 ( reposiTUm)

Pogany, D. (2007). Report on TIM thermal measurements to IMS/NXP. http://hdl.handle.net/20.500.12708/31493 ( reposiTUm)

Pogany, D. (2007). Report on ESD measurements by TIM to AMIS. http://hdl.handle.net/20.500.12708/31492 ( reposiTUm)

Kuzmik, J., & Pogany, D. (2007). ULTRAGAN contractual Deliverable D3.1: Insulated gate InAlN/GaN HEMT. http://hdl.handle.net/20.500.12708/31496 ( reposiTUm)

Kuzmik, J., & Pogany, D. (2007). Ultragan contractual Deliverable D4.2: Thermal condcutivity measurement results on InAlN materials. http://hdl.handle.net/20.500.12708/31497 ( reposiTUm)

Pogany, D. (2007). Reports on TIM measurements of ESD protection devices to Infineon. http://hdl.handle.net/20.500.12708/31495 ( reposiTUm)

Kuzmik, J., & Pogany, D. (2007). Ultragan contracutal Deliverable D5.2: Report on preliminary evaluation on the breakdown mechanisms. http://hdl.handle.net/20.500.12708/31499 ( reposiTUm)

Kuzmik, J., & Pogany, D. (2007). ULTRAGAN contractual Deliverable D3.2: Passivated InAlN/GaN HEMT. http://hdl.handle.net/20.500.12708/31498 ( reposiTUm)

Kuzmik, J., & Pogany, D. (2007). Ultragan 2nd annual activity report. http://hdl.handle.net/20.500.12708/31500 ( reposiTUm)

Pogany, D. (2007). Final SIDRA Medea + projekt report to FFG. http://hdl.handle.net/20.500.12708/31487 ( reposiTUm)

Pogany, D. (2007). Report on ESD measurements by TIM to NXP (SIDRA). http://hdl.handle.net/20.500.12708/31488 ( reposiTUm)

Gornik, E., Pogany, D., Fürböck, C., & Litzenberger, M. (2000). New characterisation methods for development of ESD protection structures. http://hdl.handle.net/20.500.12708/31054 ( reposiTUm)

Gornik, E., Pogany, D., & Fürböck, C. (2000). Report on failure analysis of semiconductor devices. http://hdl.handle.net/20.500.12708/31055 ( reposiTUm)

Gornik, E., Pogany, D., Fürböck, C., & Litzenberger, M. (2000). Endbericht für Ministery Projekt. http://hdl.handle.net/20.500.12708/31056 ( reposiTUm)

Pogány, D. (2003). Reliability and testing of semiconductor devices [Professorial Dissertation, Technische Universität Wien]. reposiTUm. http://hdl.handle.net/20.500.12708/180722 ( reposiTUm)