Wilhelmer, C., Waldhör, D., Cvitkovich, L., Milardovich, D., Waltl, M., & Grasser, T. (2024). Polaron formation in the hydrogenated amorphous silicon nitride Si₃N₄ : H. Physical Review B, 110(4), 1–12. https://doi.org/10.1103/PhysRevB.110.045201 ( reposiTUm)

Waltl, M., Stampfer, B., & Grasser, T. (2024). Extraction of Charge Trapping Kinetics of Defects From Single-Defect Measurements. IEEE Transactions on Device and Materials Reliability, 24(2), 168–173. https://doi.org/10.1109/TDMR.2024.3395907 ( reposiTUm)

Grasser, T., Waltl, M., & Knobloch, T. (2024). Fluoride dielectrics for 2D transistors. Nature Nanotechnology, 19(7), 880–881. https://doi.org/10.1038/s41565-024-01710-5 ( reposiTUm)

Stampfer, P., Roger, F., Cvitkovich, L., Grasser, T., & Waltl, M. (2024). A DLTS Study on Deep Trench Processing-Induced Trap States in Silicon Photodiodes. IEEE Transactions on Device and Materials Reliability, 24(2), 161–167. https://doi.org/10.1109/TDMR.2024.3382396 ( reposiTUm)

Feil, M., Waschneck, K., Reisinger, H., Berens, J., Aichinger, T., Prigann, S., Pobegen, G., Salmen, P., Rescher, G., Waldhör, D., Vasilev, A., Gustin, W., Waltl, M., & Grasser, T. (2024). Gate Switching Instability in Silicon Carbide MOSFETs—Part I: Experimental. IEEE Transactions on Electron Devices, 71(7), 4210–4217. https://doi.org/10.1109/TED.2024.3397636 ( reposiTUm)

Stephanie, M. V., Pham, L., Schindler, A., Grasser, T., Waltl, M., & Schrenk, B. (2024). Photonic Neuron With on Frequency-Domain ReLU Activation Function. Journal of Lightwave Technology, 42(22), 7919–7928. https://doi.org/10.1109/JLT.2024.3413976 ( reposiTUm)

Grasser, T., Feil, M. W., Waschneck, K., Reisinger, H., Berens, J., Waldhör, D., Vasilev, A., Waltl, M., Aichinger, T., Bockstedte, M., Gustin, W., & Pobegen, G. (2024). Gate Switching Instability in Silicon Carbide MOSFETs—Part II: Modeling. IEEE Transactions on Electron Devices, 71(7), 4218–4226. https://doi.org/10.1109/TED.2024.3397629 ( reposiTUm)

Feil, M. W., Weger, M., Reisinger, H., Aichinger, T., Kabakow, A., Waldhör, D., Jakowetz, A. C., Prigann, S., Pobegen, G., Gustin, W., Waltl, M., Bockstedte, M., & Grasser, T. (2024). Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETs. Physical Review Applied, 22(2), Article 024075. https://doi.org/10.1103/PhysRevApplied.22.024075 ( reposiTUm)

Aslam, M. A., Leitner, S., Tyagi, S., Provias, A., Tkachuk, V., Pavlica, E., Dienstleder, M., Knez, D., Watanabe, K., Taniguchi, T., Yan, D., Shi, Y., Knobloch, T., Waltl, M., Schwingenschlögl, U., Grasser, T., & Matković, A. (2024). All van der Waals Semiconducting PtSe₂ Field Effect Transistors with Low Contact Resistance Graphite Electrodes. Nano Letters, 24(22), 6529–6537. https://doi.org/10.1021/acs.nanolett.4c00956 ( reposiTUm)

Illarionov, Yu. Yu., Knobloch, T., Uzlu, B., Banshchikov, A., Ivanov, I. A., Sverdlov, V., Otto, M., Stoll, S. L., Vexler, M., Waltl, M., Wang, Z., Manna, B., Neumaier, D., Lemme, M., Sokolov, N. S., & Grasser, T. (2024). Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF₂ insulators. Npj 2D Materials and Applications, 8(1), 1–10. https://doi.org/10.1038/s41699-024-00461-0 ( reposiTUm)

Tselios, K., Knobloch, T., Waldhör, D., Stampfer, B., Ioannidis, E., Enichlmair, H., Minixhofer, R., Grasser, T., & Waltl, M. (2023). Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO₂ Transistors. IEEE Transactions on Device and Materials Reliability, 23(3), 355–362. https://doi.org/10.1109/TDMR.2023.3262141 ( reposiTUm)

Wilhelmer, C., Waldhör, D., Cvitkovich, L., Milardovich, D., Waltl, M., & Grasser, T. (2023). Over- and Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (a-Si3N4). Nanomaterials, 13(16), Article 2286. https://doi.org/10.3390/nano13162286 ( reposiTUm)

Waltl, M., Schleich, C., Vasilev, A., Waldhör, D., Stampfer, B., & Grasser, T. (2023). Physical Modelling of Charge Trapping Effects in SiC MOSFETs. Materials Science Forum, 1090, 185–191. https://doi.org/10.4028/p-o083cb ( reposiTUm)

Hernandez, Y., Schleich, C., Stampfer, B., Grasser, T., & Waltl, M. (2023). Impact of Bias Temperature Instabilities on the Performance of Power Electronics Employing SiC MOSFETs. Materials Science Forum, 1092, 193–200. https://doi.org/10.4028/p-7c79an ( reposiTUm)

Waldhoer, D., Schleich, C., Michl, J. D., Grill, A., Claes, D., Karl, A., Knobloch, T., Rzepa, G., Franco, J., Kaczer, B., Waltl, M., & Grasser, T. (2023). Comphy v3.0—A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices. Microelectronics Reliability, 146, 1–15. https://doi.org/10.1016/j.microrel.2023.115004 ( reposiTUm)

Stampfer, P., Stampfer, B., Grasser, T., & Waltl, M. (2023). Accurate Extraction of Minority Carrier Lifetimes—Part I: Transient Methods. IEEE Transactions on Electron Devices, 70(8), 4320–4325. https://doi.org/10.1109/TED.2023.3286798 ( reposiTUm)

Stampfer, P., Stampfer, B., Grasser, T., & Waltl, M. (2023). Accurate Extraction of Minority Carrier Lifetimes—Part II: Combined I–V C–V Methods. IEEE Transactions on Electron Devices, 70(8), 4326–4331. https://doi.org/10.1109/TED.2023.3286792 ( reposiTUm)

Stampfer, P., Roger, F., Grasser, T., & Waltl, M. (2023). Impact of Trap States at Deep Trench Sidewalls on the Responsivity of Island Photodiodes. IEEE Transactions on Electron Devices, 70(11), 5738–5744. https://doi.org/10.1109/TED.2023.3315225 ( reposiTUm)

Schleich, C., Feil, M. W., Waldhör, D., Vasilev, A., Grasser, T., & Waltl, M. (2023). Lifetime Projection of Bipolar Operation of SiC DMOSFET. Materials Science Forum, 1091, 73–77. https://doi.org/10.4028/p-9i494d ( reposiTUm)

Feil, M. W., Reisinger, H., Kabakow, A., Aichinger, T., Schleich, C., Vasilev, A., Waldhör, D., Waltl, M., Gustin, W., & Grasser, T. (2023). Electrically stimulated optical spectroscopy of interface defects in wide-bandgap field-effect transistors. Communications Engineering, 2(1), 1–10. https://doi.org/10.1038/s44172-023-00053-8 ( reposiTUm)

Vasilev, A., Feil, M. W., Schleich, C., Stampfer, B., Rzepa, G., Pobegen, G., Grasser, T., & Waltl, M. (2023). Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations. Materials Science Forum, 1090, 119–126. https://doi.org/10.4028/p-k93y93 ( reposiTUm)

Stephanie, M. V., Honz, F., Vokic, N., Boxleitner, W., Waltl, M., Grasser, T., & Schrenk, B. (2023). SOA-REAM Assisted Synaptic Receptor for Weighted-Sum Detection of Multiple Inputs. Journal of Lightwave Technology, 41(4), 1258–1264. https://doi.org/10.1109/JLT.2022.3212111 ( reposiTUm)

Wilhelmer, C., Waldhoer, D., Jech, M., El-Sayed, A.-M. B., Cvitkovich, L., Waltl, M., & Grasser, T. (2022). Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture. Microelectronics Reliability, 139(114801), 114801. https://doi.org/10.1016/j.microrel.2022.114801 ( reposiTUm)

Waltl, M. (2022). Editorial for the Special Issue on Robust Microelectronic Devices. Crystals, 12(1), 16. https://doi.org/10.3390/cryst12010016 ( reposiTUm)

Waltl, M., Knobloch, T., Tselios, K., Filipovic, L., Stampfer, B., Hernandez, Y., Waldhör, D., Illarionov, Y., Kaczer, B., & Grasser, T. (2022). Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology? Advanced Materials, 34(48), 2201082. https://doi.org/10.1002/adma.202201082 ( reposiTUm)

Waltl, M., Hernandez Barrios, Y., Schleich, C., Waschneck, K., Stampfer, B., Reisinger, H., & Grasser, T. (2022). Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models. Materials Science Forum, 1062, 688–695. https://doi.org/10.4028/p-pijkeu ( reposiTUm)

Schleich, C., Waldhör, D., Knobloch, T., Zhou, W., Stampfer, B., Michl, J. D., Waltl, M., & Grasser, T. (2022). Single- Versus Multi-Step Trap Assisted Tunneling Currents—Part I: Theory. IEEE Transactions on Electron Devices, 69(8), 4479–4485. https://doi.org/10.1109/TED.2022.3185966 ( reposiTUm)

Vasilev, A., Jech, M., Grill, A., Rzepa, G., Schleich, C., Tyaginov, S., Makarov, A., Pobegen, G., Grasser, T., & Waltl, M. (2022). TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETs. IEEE Transactions on Electron Devices, 69(6), 3290–3295. https://doi.org/10.1109/TED.2022.3166123 ( reposiTUm)

Schleich, C., Waldhör, D., El-Sayed, A.-M. B., Tselios, K., Kaczer, B., Grasser, T., & Waltl, M. (2022). Single- Versus Multi-Step Trap Assisted Tunneling Currents—Part II: The Role of Polarons. IEEE Transactions on Electron Devices, 69(8), 4486–4493. https://doi.org/10.1109/TED.2022.3185965 ( reposiTUm)

Tselios, K., Michl, J. D., Knobloch, T., Enichlmair, H., Ioannidis, E. G., Minixhofer, R., Grasser, T., & Waltl, M. (2022). Evaluation of the impact of defects on threshold voltage drift employing SiO₂ pMOS transistors. Microelectronics Reliability, 138, 1–6. https://doi.org/10.1016/j.microrel.2022.114701 ( reposiTUm)

Knobloch, T., Uzlu, B., Illarionov, Y., Wang, Z., Otto, M., Filipovic, L., Waltl, M., Neumaier, D., Lemme, M. C., & Grasser, T. (2022). Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning. Nature Electronics, 5(6), 356–366. https://doi.org/10.1038/s41928-022-00768-0 ( reposiTUm)

Knobloch, T., Illarionov, Y. Yu., Ducry, F., Schleich, C., Wachter, S., Watanabe, K., Taniguchi, T., Mueller, T., Waltl, M., Lanza, M., Vexler, M. I., Luisier, M., & Grasser, T. (2021). The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials. Nature Electronics, 4(2), 98–108. https://doi.org/10.1038/s41928-020-00529-x ( reposiTUm)

Shah, A. P., & Waltl, M. (2021). Impact of Negative Bias Temperature Instability on Single Event Transients in Scaled Logic Circuits. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 34(3). https://doi.org/10.1002/jnm.2854 ( reposiTUm)

Jech, M., El-Sayed, A.-M., Tyaginov, S., Waldhör, D., Bouakline, F., Saalfrank, P., Jabs, D., Jungemann, C., Waltl, M., & Grasser, T. (2021). Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices. Physical Review Applied, 16(014026). https://doi.org/10.1103/physrevapplied.16.014026 ( reposiTUm)

Gupta, N., Shah, A. P., Khan, S., Vishvakarma, S. K., Waltl, M., & Girard, P. (2021). Error-Tolerant Reconfigurable VDD 10T SRAM Architecture for IoT Applications. Electronics, 10(14), 1718. https://doi.org/10.3390/electronics10141718 ( reposiTUm)

Waldhoer, D., Schleich, C., Michl, J., Stampfer, B., Tselios, K., Ioannidis, E. G., Enichlmair, H., Waltl, M., & Grasser, T. (2021). Toward Automated Defect Extraction From Bias Temperature Instability Measurements. IEEE Transactions on Electron Devices, 68(8), 4057–4063. https://doi.org/10.1109/ted.2021.3091966 ( reposiTUm)

Shah, A. P., Gupta, N., & Waltl, M. (2021). High-Performance Radiation Hardened NMOS Only Schmitt Trigger Based Latch Designs. Analog Integrated Circuits and Signal Processing, 109(3), 657–671. https://doi.org/10.1007/s10470-021-01924-w ( reposiTUm)

Tselios, K., Waldhör, D., Stampfer, B., Michl, J., Ioannidis, E., Enichlmair, H., Grasser, T., & Waltl, M. (2021). On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors. IEEE Transactions on Device and Materials Reliability, 21(2), 199–206. https://doi.org/10.1109/tdmr.2021.3080983 ( reposiTUm)

Michl, J., Grill, A., Waldhoer, D., Goes, W., Kaczer, B., Linten, D., Parvais, B., Govoreanu, B., Radu, I., Waltl, M., & Grasser, T. (2021). Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory. IEEE Transactions on Electron Devices, 68(12), 6365–6371. https://doi.org/10.1109/ted.2021.3116931 ( reposiTUm)

Michl, J., Grill, A., Waldhoer, D., Goes, W., Kaczer, B., Linten, D., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., & Waltl, M. (2021). Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: Experimental. IEEE Transactions on Electron Devices, 68(12), 6372–6378. https://doi.org/10.1109/ted.2021.3117740 ( reposiTUm)

Waltl, M., Waldhoer, D., Tselios, K., Stampfer, B., Schleich, C., Rzepa, G., Enichlmair, H., Ioannidis, E. G., Minixhofer, R., & Grasser, T. (2021). Impact of Single-Defects on the Variability of CMOS Inverter Circuits. Microelectronics Reliability, 126(114275), 114275. https://doi.org/10.1016/j.microrel.2021.114275 ( reposiTUm)

Hernandez, Y., Stampfer, B., Grasser, T., & Waltl, M. (2021). Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor Technologies. Crystals, 11(9), 1150. https://doi.org/10.3390/cryst11091150 ( reposiTUm)

Waltl, M., Waldhör, D., Tselios, K., Stampfer, B., Schleich, C., Rzepa, G., Enichlmair, H., Ioannidis, E. G., Minixhofer, R., & Grasser, T. (2021). Impact of single-defects on the variability of CMOS inverter circuits. Microelectronics Reliability, 126, 1–6. https://doi.org/10.1016/j.microrel.2021.114275 ( reposiTUm)

Schleich, C., Waldhoer, D., Waschneck, K., Feil, M. W., Reisinger, H., Grasser, T., & Waltl, M. (2021). Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies. IEEE Transactions on Electron Devices, 68(8), 4016–4021. https://doi.org/10.1109/ted.2021.3092295 ( reposiTUm)

Jech, M., Rott, G., Reisinger, H., Tyaginov, S., Rzepa, G., Grill, A., Jabs, D., Jungemann, C., Waltl, M., & Grasser, T. (2020). Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities. IEEE Transactions on Electron Devices, 67(8), 3315–3322. https://doi.org/10.1109/ted.2020.3000749 ( reposiTUm)

Shah, A. P., & Waltl, M. (2020). Bias Temperature Instability Aware and Soft Error Tolerant Radiation Hardened 10T SRAM. Electronics, 9(2), 256. https://doi.org/10.3390/electronics9020256 ( reposiTUm)

Shah, A. P., Rossi, D., Sharma, V., Vishvakarma, S. K., & Waltl, M. (2020). Soft Error Hardening Enhancement Analysis of NBTI Tolerant Schmitt Trigger Circuit. Microelectronics Reliability, 107(113617), 113617. https://doi.org/10.1016/j.microrel.2020.113617 ( reposiTUm)

Waltl, M. (2020). Ultra-Low Noise Defect Probing Instrument for Defect Spectroscopy of MOS Transistors. IEEE Transactions on Device and Materials Reliability, 20(2), 242–250. https://doi.org/10.1109/tdmr.2020.2988650 ( reposiTUm)

Stampfer, B., Schanovsky, F., Grasser, T., & Waltl, M. (2020). Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors. Micromachines, 11(4). https://doi.org/10.3390/mi11040446 ( reposiTUm)

Waltl, M., Stampfer, B., Rzepa, G., Kaczer, B., & Grasser, T. (2020). Separation of Electron and Hole Trapping Components of PBTI in SiON nMOS Transistors. Microelectronics Reliability, 114(113746), 113746. https://doi.org/10.1016/j.microrel.2020.113746 ( reposiTUm)

Waltl, M. (2020). Reliability of Miniaturized Transistors from the Perspective of Single-Defects. Micromachines, 11(8), 736. https://doi.org/10.3390/mi11080736 ( reposiTUm)

Stampfer, B., Simicic, M., Weckx, P., Abbasi, A., Kaczer, B., Grasser, T., & Waltl, M. (2020). Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays. IEEE Transactions on Device and Materials Reliability, 20(2), 251–257. https://doi.org/10.1109/tdmr.2020.2985109 ( reposiTUm)

Illarionov, Y. Y., Banshchikov, A. G., Polyushkin, D. K., Wachter, S., Knobloch, T., Thesberg, M., Vexler, M. I., Waltl, M., Lanza, M., Sokolov, N. S., Mueller, T., & Grasser, T. (2019). Reliability of Scalable MoS2 FETs With 2 nm Crystalline CaF2 Insulators. 2D Materials, 6(4), 045004. https://doi.org/10.1088/2053-1583/ab28f2 ( reposiTUm)

Ullmann, B., Puschkarsky, K., Waltl, M., Reisinger, H., & Grasser, T. (2019). Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques. IEEE Transactions on Device and Materials Reliability, 19(2), 358–362. https://doi.org/10.1109/tdmr.2019.2909993 ( reposiTUm)

Grill, A., Stampfer, B., Im, K.-S., Lee, J.-H., Ostermaier, C., Ceric, H., Waltl, M., & Grasser, T. (2019). Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs. Solid-State Electronics, 156, 41–47. https://doi.org/10.1016/j.sse.2019.02.004 ( reposiTUm)

Illarionov, Y. Yu., Banshchikov, A. G., Polyushkin, D. K., Wachter, S., Knobloch, T., Thesberg, M., Mennel, L., Paur, M., Stöger-Pollach, M., Steiger-Thirsfeld, A., Vexler, M. I., Waltl, M., Sokolov, N. S., Mueller, T., & Grasser, T. (2019). Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors. Nature Electronics, 2(6), 230–235. https://doi.org/10.1038/s41928-019-0256-8 ( reposiTUm)

Ullmann, B., Jech, M., Puschkarsky, K., Rott, G. A., Waltl, M., Illarionov, Y., Reisinger, H., & Grasser, T. (2019). Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: Experimental. IEEE Transactions on Electron Devices, 66(1), 232–240. https://doi.org/10.1109/ted.2018.2873419 ( reposiTUm)

Jech, M., Ullmann, B., Rzepa, G., Tyaginov, S., Grill, A., Waltl, M., Jabs, D., Jungemann, C., & Grasser, T. (2019). Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory. IEEE Transactions on Electron Devices, 66(1), 241–248. https://doi.org/10.1109/ted.2018.2873421 ( reposiTUm)

Rzepa, G., Franco, J., O’Sullivan, B., Subirats, A., Simicic, M., Hellings, G., Weckx, P., Jech, M., Knobloch, T., Waltl, M., Roussel, P. J., Linten, D., Kaczer, B., & Grasser, T. (2018). Comphy -- A Compact-Physics Framework for Unified Modeling of BTI. Microelectronics Reliability, 85, 49–65. https://doi.org/10.1016/j.microrel.2018.04.002 ( reposiTUm)

Kaczer, B., Franco, J., Weckx, P., Roussel, Ph. J., Putcha, V., Bury, E., Simicic, M., Chasin, A., Linten, D., Parvais, B., Catthoor, F., Rzepa, G., Waltl, M., & Grasser, T. (2018). A Brief Overview of Gate Oxide Defect Properties and Their Relation to MOSFET Instabilities and Device and Circuit Time-Dependent Variability. Microelectronics Reliability, 81, 186–194. https://doi.org/10.1016/j.microrel.2017.11.022 ( reposiTUm)

Stampfer, B., Zhang, F., Illarionov, Y. Y., Knobloch, T., Wu, P., Waltl, M., Grill, A., Appenzeller, J., & Grasser, T. (2018). Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors. ACS Nano, 12(6), 5368–5375. https://doi.org/10.1021/acsnano.8b00268 ( reposiTUm)

Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Schanovski, F., Stampfer, B., Furchi, M. M., Müller, T., & Grasser, T. (2018). A Physical Model for the Hysteresis in MoS2 Transistors. IEEE Journal of the Electron Devices Society, 6, 972–978. https://doi.org/10.1109/jeds.2018.2829933 ( reposiTUm)

Illarionov, Y. Yu., Smithe, K. K. H., Waltl, M., Knobloch, T., Pop, E., & Grasser, T. (2017). Improved Hysteresis and Reliability of MoS₂ Transistors With High-Quality CVD Growth and Al₂O₃ Encapsulation. IEEE Electron Device Letters, 38(12), 1763–1766. https://doi.org/10.1109/led.2017.2768602 ( reposiTUm)

Illarionov, Y. Y., Knobloch, T., Waltl, M., Rzepa, G., Pospischil, A., Polyushkin, D., Furchi, M. M., Mueller, T., & Grasser, T. (2017). Energetic mapping of oxide traps in MoS₂ field-effect transistors. 2D Materials, 4(2), Article 025108. https://doi.org/10.1088/2053-1583/aa734a ( reposiTUm)

Stradiotto, R., Pobegen, G., Ostermaier, C., Waltl, M., Grill, A., & Grasser, T. (2017). Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs. IEEE Transactions on Electron Devices, 64(3), 1045–1052. https://doi.org/10.1109/ted.2017.2655367 ( reposiTUm)

Waltl, M., Rzepa, G., Grill, A., Goes, W., Franco, J., Kaczer, B., Witters, L., Mitard, J., Horiguchi, N., & Grasser, T. (2017). Superior NBTI in High-k SiGe Transistors - Part I: Experimental. IEEE Transactions on Electron Devices, 64(5), 2092–2098. https://doi.org/10.1109/ted.2017.2686086 ( reposiTUm)

Waltl, M., Rzepa, G., Grill, A., Goes, W., Franco, J., Kaczer, B., Witters, L., Mitard, J., Horiguchi, N., & Grasser, T. (2017). Superior NBTI in High-k SiGe Transistors - Part II: Theory. IEEE Transactions on Electron Devices, 64(5), 2099–2105. https://doi.org/10.1109/ted.2017.2686454 ( reposiTUm)

Illarionov, Yu. Yu., Waltl, M., Rzepa, G., Knobloch, T., Kim, J.-S., Akinwande, D., & Grasser, T. (2017). Highly-Stable Black Phosphorus Field-Effect Transistors with Low Density of Oxide Traps. Npj 2D Materials and Applications, 1(23). https://doi.org/10.1038/s41699-017-0025-3 ( reposiTUm)

Illarionov, Y. Yu., Waltl, M., Smith, A. D., Vaziri, S., Ostling, M., Lemme, M. C., & Grasser, T. (2016). Bias-Temperature Instability on the Back Gate of Single-Layer Double-Gated Graphene Field-Effect Transistors. Japanese Journal of Applied Physics, 55(4S), 04EP03. https://doi.org/10.7567/jjap.55.04ep03 ( reposiTUm)

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Illarionov, Y., Rzepa, G., Waltl, M., Pandey, H., Kataria, S., Passi, V., Lemme, M. C., & Grasser, T. (2016). A Systematic Study of Charge Trapping in Single-Layer Double-Gated GFETs. In 74#^{th }Device Research Conference Digest (pp. 89–90). http://hdl.handle.net/20.500.12708/75178 ( reposiTUm)

Illarionov, Yu. Yu., Waltl, M., Furchi, M. M., Mueller, T., & Grasser, T. (2016). Reliability of single-layer MoS<inf>2</inf> field-effect transistors with SiO<inf>2</inf> and hBN gate insulators. In 2016 IEEE International Reliability Physics Symposium (IRPS). IEEE International Reliability Physics Symposium (IRPS), Waikoloa, United States of America (the). https://doi.org/10.1109/irps.2016.7574543 ( reposiTUm)

Ullmann, B., Waltl, M., & Grasser, T. (2015). Characterization of the Permanent Component of MOSFET Degradation Mechanisms. In Proceedings of the 2015 Vienna Young Scient Symposium (pp. 36–37). http://hdl.handle.net/20.500.12708/74613 ( reposiTUm)

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Illarionov, Y., Waltl, M., Smith, A. D., Vaziri, S., Ostling, M., Lemme, M. C., & Grasser, T. (2015). Impact of hot carrier stress on the defect density and mobility in double-gated graphene field-effect transistors. In EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon. Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy. Ieee Xplore. https://doi.org/10.1109/ulis.2015.7063778 ( reposiTUm)

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Goes, W., Waltl, M., Wimmer, Y., Rzepa, G., & Grasser, T. (2014). Advanced modeling of charge trapping: RTN, 1/f noise, SILC, and BTI. In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. IEEE. https://doi.org/10.1109/sispad.2014.6931567 ( reposiTUm)

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Waltl, M., Gös, W., Rott, K., Reisinger, H., & Grasser, T. (2014). A Single-Trap Study of PBTI in SiON nMOS Transistors: Similarities and Differences to the NBTI/pMOS Case. In Proceedings of the International Reliability Physics Symposium (IRPS) (p. XT18.1-XT18.5). http://hdl.handle.net/20.500.12708/74076 ( reposiTUm)

Grasser, T., Rott, K., Reisinger, H., Waltl, M., Schanovsky, F., Gös, W., & Kaczer, B. (2013). Recent Advances in Understanding Oxide Traps in pMOS Transistors. In Proceedings of 2013 IWDTF (pp. 95–96). http://hdl.handle.net/20.500.12708/73721 ( reposiTUm)

Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, Ph. J., Groeseneken, G., Schwarz, B., Bina, M., Waltl, M., Wagner, P.-J., & Grasser, T. (2013). Reduction of the BTI Time-Dependent Variability in Nanoscaled MOSFETs by Body Bias. In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 1–6). http://hdl.handle.net/20.500.12708/73426 ( reposiTUm)

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Waltl, M., Hernandez, Y., Schleich, C., Waschneck, K. A., Stampfer, B., Reisinger, H., & Grasser, T. (2022). Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models. In J. F. Michaud, L. V. Phung, D. Alquier, & D. Planson (Eds.), Silicon Carbide and Related Materials 2021 (pp. 688–695). Trans Tech Publications Ltd , Switzerland. http://hdl.handle.net/20.500.12708/30782 ( reposiTUm)

Stampfer, B., Grill, A., & Waltl, M. (2020). Advanced Electrical Characterization of Single Oxide Defects Utilizing Noise Signals. In T. Grasser (Ed.), Noise in Nanoscale Semiconductor Devices (pp. 229–257). Springer International Publishing. https://doi.org/10.1007/978-3-030-37500-3_7 ( reposiTUm)

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Knobloch, T., Rzepa, G., Illarionov, Y. Y., Waltl, M., Polyushkin, D., Pospischil, A., Furchi, M., Mueller, T., & Grasser, T. (2017). (Invited) Impact of Gate Dielectrics on the Threshold Voltage in MoS₂Transistors. In D. Misra, S. De Gendt, M. Houssa, K. Kita, & D. Landheer (Eds.), ECS Transactions (pp. 203–217). ECS Transactions. https://doi.org/10.1149/08001.0203ecst ( reposiTUm)

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Wilhelmer, C., Milardovich, D., Waldhör, D., Cvitkovich, L., Waltl, M., & Grasser, T. (2023, May 30). Intrinsic Charge Trapping Sites in Amorphous Si₃N₄ [Conference Presentation]. European Materials Research Society (E-MRS) Spring Meeting 2023, Strasbourg, France. ( reposiTUm)

Wilhelmer, C., Milardovich, D., Waldhör, D., Cvitkovich, L., Waltl, M., & Grasser, T. (2023, May 29). Charged instrinsic defect states in amorphous Si3N4 [Conference Presentation]. European Materials Research Society (E-MRS) Spring Meeting 2023, Strasbourg, France. http://hdl.handle.net/20.500.12708/188962 ( reposiTUm)

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Illarionov, Y., Stampfer, B., Zhang, F., Knobloch, T., Wu, P., Waltl, M., Grill, A., Appenzeller, J., & Grasser, T. (2018). Characterization of Single Defects: from Si to MoS2 FETs. International Conference on Physics of 2D Crystals (ICP2C3), Valetta, Malta. http://hdl.handle.net/20.500.12708/91060 ( reposiTUm)

Illarionov, Y., Waltl, M., Knobloch, T., Rzepa, G., & Grasser, T. (2017). Reliability Perspective of 2D Electronics. International Conference on Physics of 2D Crystals (ICP2C2), Ha Long, Viet Nam. http://hdl.handle.net/20.500.12708/90927 ( reposiTUm)

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