Wissenschaftliche Artikel

Cerdeira, A., Estrada, M., Mounir, A., Grasser, T., & Iniguez, B. (2025). Analysis of the mobility behavior of MOS₂ 2D FETs. Solid-State Electronics, 224, 1–7. https://doi.org/10.1016/j.sse.2024.109032 ( reposiTUm)
Ghosh, R., Provias, A., Karl, A., Wilhelmer, C., Knobloch, T., Davoudi, M. R., Sattari Esfahlan, S., Waldhör, D., & Grasser, T. (2025). Theoretical insights into the impact of border and interface traps on hysteresis in monolayer MoS₂ FETs. Microelectronic Engineering, 299, Article 112333. https://doi.org/10.1016/j.mee.2025.112333 ( reposiTUm)
Borghi, M., Giovanelli, G., Montecchi, M., Capelli, R., Mescola, A., Paolicelli, G., D’Addato, S., Grasser, T., & Pasquali, L. (2025). Comprehensive study of SrF₂ growth on highly oriented pyrolytic graphite (HOPG): Temperature-dependent van der Waals epitaxy. Applied Surface Science, 680, 1–9. https://doi.org/10.1016/j.apsusc.2024.161310 ( reposiTUm)
Giovanelli, G., Borghi, M., Lodi, A., Grasser, T., & Pasquali, L. (2025). Thin epitaxial ionic fluoride films for electronics applications. Surfaces, 8(2), Article 22. https://doi.org/10.3390/surfaces8020022 ( reposiTUm)
Sattari-Esfahlan, S. M., Yang, A. J., Ghosh, R., Zheng, W., Rzepa, G., Knobloch, T., Lanza, M., Renshaw Wang, X., & Grasser, T. (2025). Stability and Reliability of van der Waals High-κ SrTiO3 Field-Effect Transistors with Small Hysteresis. ACS Nano, 19(12), 12288–12297. https://doi.org/10.1021/acsnano.5c01145 ( reposiTUm)
Wilhelmer, C., Waldhör, D., Cvitkovich, L., Milardovich, D., Waltl, M., & Grasser, T. (2024). Polaron formation in the hydrogenated amorphous silicon nitride Si₃N₄ : H. Physical Review B, 110(4), 1–12. https://doi.org/10.1103/PhysRevB.110.045201 ( reposiTUm)
Waltl, M., Stampfer, B., & Grasser, T. (2024). Extraction of Charge Trapping Kinetics of Defects From Single-Defect Measurements. IEEE Transactions on Device and Materials Reliability, 24(2), 168–173. https://doi.org/10.1109/TDMR.2024.3395907 ( reposiTUm)
Grasser, T., Waltl, M., & Knobloch, T. (2024). Fluoride dielectrics for 2D transistors. Nature Nanotechnology, 19(7), 880–881. https://doi.org/10.1038/s41565-024-01710-5 ( reposiTUm)
Patoary, N. H., Mamun, F. A., Xie, J., Grasser, T., & Sanchez Esqueda, I. (2024). Analysis and EOT Scaling on Top‐ and Double‐Gate 2D CVD‐Grown Monolayer MoS₂ FETs. Advanced Electronic Materials, 10(11), Article 2400152. https://doi.org/10.1002/aelm.202400152 ( reposiTUm)
Panarella, L., Kaczer, B., Smets, Q., Tyaginov, S., Saraza-Canflanca, P., Vici, A., Verreck, D., Schram, T., Lin, D., Knobloch, T., Grasser, T., Lockhart de la Rosa, C., Kar, G. S., & Afanas’ev, V. (2024). Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS₂ FETs. Npj 2D Materials and Applications, 8(1), 1–9. https://doi.org/10.1038/s41699-024-00482-9 ( reposiTUm)
Cvitkovich, L., Stano, P., Wilhelmer, C., Waldhör, D., Loss, D., Niquet, Y. M., & Grasser, T. (2024). Coherence limit due to hyperfine interaction with nuclei in the barrier material of Si spin qubits. Physical Review Applied, 22(6), Article 064089. https://doi.org/10.1103/PhysRevApplied.22.064089 ( reposiTUm)
Stampfer, P., Roger, F., Cvitkovich, L., Grasser, T., & Waltl, M. (2024). A DLTS Study on Deep Trench Processing-Induced Trap States in Silicon Photodiodes. IEEE Transactions on Device and Materials Reliability, 24(2), 161–167. https://doi.org/10.1109/TDMR.2024.3382396 ( reposiTUm)
Borghi, M., Mescola, A., Paolicelli, G., Montecchi, M., D’Addato, S., Vacondio, S., Bursi, L., Ruini, A., Doyle, B. P., Grasser, T., & Pasquali, L. (2024). Initial Stages of Growth and Electronic Properties of Epitaxial SrF₂ Thin Films on Ag(111). Applied Surface Science, 656, 1–11. https://doi.org/10.1016/j.apsusc.2024.159724 ( reposiTUm)
Smith, N., Berens, J., Pobegen, G., Grasser, T., & Shluger, A. (2024). Al–O–Al defect complexes as possible candidates for channel electron mobility reducing trapping centers in 4H-SiC metal–oxide–semiconductor field-effect transistors. Journal of Applied Physics, 136(8), 1–9. https://doi.org/10.1063/5.0213528 ( reposiTUm)
Feil, M., Waschneck, K., Reisinger, H., Berens, J., Aichinger, T., Prigann, S., Pobegen, G., Salmen, P., Rescher, G., Waldhör, D., Vasilev, A., Gustin, W., Waltl, M., & Grasser, T. (2024). Gate Switching Instability in Silicon Carbide MOSFETs—Part I: Experimental. IEEE Transactions on Electron Devices, 71(7), 4210–4217. https://doi.org/10.1109/TED.2024.3397636 ( reposiTUm)
Ravichandran, H., Knobloch, T., Subbulakshmi Radhakrishnan, S., Wilhelmer, C., Stepanoff, S., Stampfer, B., Ghosh, S., Oberoi, A., Waldhoer, D., Chen, C., Redwing, J. M., Wolfe, D. E., Grasser, T., & Das, S. (2024). A stochastic encoder using point defects in two-dimensional materials. Nature Communications, 15(1), 1–11. https://doi.org/10.1038/s41467-024-54283-1 ( reposiTUm)
Grasser, T., Feil, M. W., Waschneck, K., Reisinger, H., Berens, J., Waldhör, D., Vasilev, A., Waltl, M., Aichinger, T., Bockstedte, M., Gustin, W., & Pobegen, G. (2024). Gate Switching Instability in Silicon Carbide MOSFETs—Part II: Modeling. IEEE Transactions on Electron Devices, 71(7), 4218–4226. https://doi.org/10.1109/TED.2024.3397629 ( reposiTUm)
Feil, M. W., Weger, M., Reisinger, H., Aichinger, T., Kabakow, A., Waldhör, D., Jakowetz, A. C., Prigann, S., Pobegen, G., Gustin, W., Waltl, M., Bockstedte, M., & Grasser, T. (2024). Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETs. Physical Review Applied, 22(2), Article 024075. https://doi.org/10.1103/PhysRevApplied.22.024075 ( reposiTUm)
Illarionov, Yu. Yu., Karl, A., Smets, Q., Kaczer, B., Knobloch, T., Panarella, L., Schram, T., Brems, S., Cott, D., Asselberghs, I., & Grasser, T. (2024). Process implications on the stability and reliability of 300 mm FAB MoS₂ field-effect transistors. Npj 2D Materials and Applications, 8(1), 1–7. https://doi.org/10.1038/s41699-024-00445-0 ( reposiTUm)
Cvitkovich, L., Fehringer, F., Wilhelmer, C., Milardovich, D., Waldhör, D., & Grasser, T. (2024). Machine learning force field for thermal oxidation of silicon. Journal of Chemical Physics, 161(14), Article 144706. https://doi.org/10.1063/5.0220091 ( reposiTUm)
Aslam, M. A., Leitner, S., Tyagi, S., Provias, A., Tkachuk, V., Pavlica, E., Dienstleder, M., Knez, D., Watanabe, K., Taniguchi, T., Yan, D., Shi, Y., Knobloch, T., Waltl, M., Schwingenschlögl, U., Grasser, T., & Matković, A. (2024). All van der Waals Semiconducting PtSe₂ Field Effect Transistors with Low Contact Resistance Graphite Electrodes. Nano Letters, 24(22), 6529–6537. https://doi.org/10.1021/acs.nanolett.4c00956 ( reposiTUm)
Shen, Y., Zhu, K., Xiao, Y., Waldhör, D., Basher Yassin, A. H., Knobloch, T., Pazos, S., Liang, X., Zheng, W., Yuan, Y., Roldan, J. B., Schwingenschlögl, U., Tian, H., Wu, H., Schranghamer, T. F., Trainor, N., Redwing, J. M., Das, S., Grasser, T., & Lanza, M. (2024). Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy. Nature Electronics, 7(10), 856–867. https://doi.org/10.1038/s41928-024-01233-w ( reposiTUm)
Illarionov, Yu. Yu., Knobloch, T., Uzlu, B., Banshchikov, A., Ivanov, I. A., Sverdlov, V., Otto, M., Stoll, S. L., Vexler, M., Waltl, M., Wang, Z., Manna, B., Neumaier, D., Lemme, M., Sokolov, N. S., & Grasser, T. (2024). Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF₂ insulators. Npj 2D Materials and Applications, 8(1), 1–10. https://doi.org/10.1038/s41699-024-00461-0 ( reposiTUm)
Söll, A., Lopriore, E., Ottesen, A., Luxa, J., Pasquale, G., Sturala, J., Hájek, F., Jarý, V., Sedmidubsky, D., Mosina, K., Sokolovic, I., Rasouli, S., Grasser, T., Diebold, U., Kis, A., & Sofer, Z. (2024). High-κ wide-gap layered dielectric for two-dimensional van der Waals heterostructures. ACS Nano, 18(15), 10397–10406. https://doi.org/10.1021/acsnano.3c10411 ( reposiTUm)
Stephanie, M. V., Pham, L., Schindler, A., Grasser, T., Waltl, M., & Schrenk, B. (2024). Photonic Neuron With on Frequency-Domain ReLU Activation Function. Journal of Lightwave Technology, 42(22), 7919–7928. https://doi.org/10.1109/JLT.2024.3413976 ( reposiTUm)
Tselios, K., Knobloch, T., Waldhör, D., Stampfer, B., Ioannidis, E., Enichlmair, H., Minixhofer, R., Grasser, T., & Waltl, M. (2023). Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO₂ Transistors. IEEE Transactions on Device and Materials Reliability, 23(3), 355–362. https://doi.org/10.1109/TDMR.2023.3262141 ( reposiTUm)
Knobloch, T., Selberherr, S., & Grasser, T. (2023). High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI Circuits. ECS Transactions, 111(1), 219–228. https://doi.org/10.1149/11101.0219ecst ( reposiTUm)
Ravichandran, H., Knobloch, T., Pannone, A., Karl, A., Stampfer, B., Waldhör, D., Zheng, Y., Sakib, N., Karim Sadaf, M., Pendurthi, R., Torsi, R., Robinson, J. A., Grasser, T., & Das, S. (2023). Observation of Rich Defect Dynamics in Monolayer MoS₂. ACS Nano, 17(15), 14449–14460. https://doi.org/10.1021/acsnano.2c12900 ( reposiTUm)
Wilhelmer, C., Waldhör, D., Cvitkovich, L., Milardovich, D., Waltl, M., & Grasser, T. (2023). Over- and Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (a-Si3N4). Nanomaterials, 13(16), Article 2286. https://doi.org/10.3390/nano13162286 ( reposiTUm)
Waltl, M., Schleich, C., Vasilev, A., Waldhör, D., Stampfer, B., & Grasser, T. (2023). Physical Modelling of Charge Trapping Effects in SiC MOSFETs. Materials Science Forum, 1090, 185–191. https://doi.org/10.4028/p-o083cb ( reposiTUm)
Hernandez, Y., Schleich, C., Stampfer, B., Grasser, T., & Waltl, M. (2023). Impact of Bias Temperature Instabilities on the Performance of Power Electronics Employing SiC MOSFETs. Materials Science Forum, 1092, 193–200. https://doi.org/10.4028/p-7c79an ( reposiTUm)
Cvitkovich, L., Waldhör, D., El-Sayed, A.-M., Jech, M., Wilhelmer, C., & Grasser, T. (2023). Dynamic modeling of Si(100) thermal oxidation: Oxidation mechanisms and realistic amorphous interface generation. Applied Surface Science, 610, Article 155378. https://doi.org/10.1016/j.apsusc.2022.155378 ( reposiTUm)
Mounir, A., Iniguez, B., Lime, F., Kloes, A., Knobloch, T., & Grasser, T. (2023). Compact I-V Model for back-gated and double-gated TMD FETs. Solid-State Electronics, 207, 1–5. https://doi.org/10.1016/j.sse.2023.108702 ( reposiTUm)
Waldhoer, D., Schleich, C., Michl, J. D., Grill, A., Claes, D., Karl, A., Knobloch, T., Rzepa, G., Franco, J., Kaczer, B., Waltl, M., & Grasser, T. (2023). Comphy v3.0—A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices. Microelectronics Reliability, 146, 1–15. https://doi.org/10.1016/j.microrel.2023.115004 ( reposiTUm)
Stampfer, P., Stampfer, B., Grasser, T., & Waltl, M. (2023). Accurate Extraction of Minority Carrier Lifetimes—Part I: Transient Methods. IEEE Transactions on Electron Devices, 70(8), 4320–4325. https://doi.org/10.1109/TED.2023.3286798 ( reposiTUm)
Stampfer, P., Stampfer, B., Grasser, T., & Waltl, M. (2023). Accurate Extraction of Minority Carrier Lifetimes—Part II: Combined I–V C–V Methods. IEEE Transactions on Electron Devices, 70(8), 4326–4331. https://doi.org/10.1109/TED.2023.3286792 ( reposiTUm)
Stampfer, P., Roger, F., Grasser, T., & Waltl, M. (2023). Impact of Trap States at Deep Trench Sidewalls on the Responsivity of Island Photodiodes. IEEE Transactions on Electron Devices, 70(11), 5738–5744. https://doi.org/10.1109/TED.2023.3315225 ( reposiTUm)
Schleich, C., Feil, M. W., Waldhör, D., Vasilev, A., Grasser, T., & Waltl, M. (2023). Lifetime Projection of Bipolar Operation of SiC DMOSFET. Materials Science Forum, 1091, 73–77. https://doi.org/10.4028/p-9i494d ( reposiTUm)
Feil, M. W., Reisinger, H., Kabakow, A., Aichinger, T., Schleich, C., Vasilev, A., Waldhör, D., Waltl, M., Gustin, W., & Grasser, T. (2023). Electrically stimulated optical spectroscopy of interface defects in wide-bandgap field-effect transistors. Communications Engineering, 2(1), 1–10. https://doi.org/10.1038/s44172-023-00053-8 ( reposiTUm)
Vasilev, A., Feil, M. W., Schleich, C., Stampfer, B., Rzepa, G., Pobegen, G., Grasser, T., & Waltl, M. (2023). Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations. Materials Science Forum, 1090, 119–126. https://doi.org/10.4028/p-k93y93 ( reposiTUm)
Stephanie, M. V., Honz, F., Vokic, N., Boxleitner, W., Waltl, M., Grasser, T., & Schrenk, B. (2023). SOA-REAM Assisted Synaptic Receptor for Weighted-Sum Detection of Multiple Inputs. Journal of Lightwave Technology, 41(4), 1258–1264. https://doi.org/10.1109/JLT.2022.3212111 ( reposiTUm)
Ducry, F., Waldhoer, D., Knobloch, T., Csontos, M., Jimenez Olalla, N., Leuthold, J., Grasser, T., & Luisier, M. (2022). An Ab Initio Study on Resistance Switching in Hexagonal Boron Nitride. Npj 2D Materials and Applications, 6(58). https://doi.org/10.1038/s41699-022-00340-6 ( reposiTUm)
Filipovic, L., & Grasser, T. (2022). Special Issue on Miniaturized Transistors, Volume II. Micromachines, 13(4), 603. https://doi.org/10.3390/mi13040603 ( reposiTUm)
Wilhelmer, C., Waldhoer, D., Jech, M., El-Sayed, A.-M. B., Cvitkovich, L., Waltl, M., & Grasser, T. (2022). Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture. Microelectronics Reliability, 139(114801), 114801. https://doi.org/10.1016/j.microrel.2022.114801 ( reposiTUm)
Knobloch, T., Selberherr, S., & Grasser, T. (2022). Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials. Nanomaterials, 12(20), 3548. https://doi.org/10.3390/nano12203548 ( reposiTUm)
Illarionov, Y. Yu., Knobloch, T., & Grasser, T. (2022). Inorganic Molecular Crystals for 2D Electronics. Nature Electronics, 4(12), 870–871. https://doi.org/10.1038/s41928-021-00691-w ( reposiTUm)
Waltl, M., Knobloch, T., Tselios, K., Filipovic, L., Stampfer, B., Hernandez, Y., Waldhör, D., Illarionov, Y., Kaczer, B., & Grasser, T. (2022). Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology? Advanced Materials, 34(48), 2201082. https://doi.org/10.1002/adma.202201082 ( reposiTUm)
Waltl, M., Hernandez Barrios, Y., Schleich, C., Waschneck, K., Stampfer, B., Reisinger, H., & Grasser, T. (2022). Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models. Materials Science Forum, 1062, 688–695. https://doi.org/10.4028/p-pijkeu ( reposiTUm)
Schleich, C., Waldhör, D., Knobloch, T., Zhou, W., Stampfer, B., Michl, J. D., Waltl, M., & Grasser, T. (2022). Single- Versus Multi-Step Trap Assisted Tunneling Currents—Part I: Theory. IEEE Transactions on Electron Devices, 69(8), 4479–4485. https://doi.org/10.1109/TED.2022.3185966 ( reposiTUm)
Vasilev, A., Jech, M., Grill, A., Rzepa, G., Schleich, C., Tyaginov, S., Makarov, A., Pobegen, G., Grasser, T., & Waltl, M. (2022). TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETs. IEEE Transactions on Electron Devices, 69(6), 3290–3295. https://doi.org/10.1109/TED.2022.3166123 ( reposiTUm)
Nazzari, D., Genser, J. A., Ritter, V., Bethge, O., Bertagnolli, E., Grasser, T., Weber, W. M., & Lugstein, A. (2022). Epitaxial Growth of Crystalline CaF₂ on Silicene. ACS Applied Materials and Interfaces, 14(28), 32675–32682. https://doi.org/10.1021/acsami.2c06293 ( reposiTUm)
Schleich, C., Waldhör, D., El-Sayed, A.-M. B., Tselios, K., Kaczer, B., Grasser, T., & Waltl, M. (2022). Single- Versus Multi-Step Trap Assisted Tunneling Currents—Part II: The Role of Polarons. IEEE Transactions on Electron Devices, 69(8), 4486–4493. https://doi.org/10.1109/TED.2022.3185965 ( reposiTUm)
Tselios, K., Michl, J. D., Knobloch, T., Enichlmair, H., Ioannidis, E. G., Minixhofer, R., Grasser, T., & Waltl, M. (2022). Evaluation of the impact of defects on threshold voltage drift employing SiO₂ pMOS transistors. Microelectronics Reliability, 138, 1–6. https://doi.org/10.1016/j.microrel.2022.114701 ( reposiTUm)
Knobloch, T., Uzlu, B., Illarionov, Y., Wang, Z., Otto, M., Filipovic, L., Waltl, M., Neumaier, D., Lemme, M. C., & Grasser, T. (2022). Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning. Nature Electronics, 5(6), 356–366. https://doi.org/10.1038/s41928-022-00768-0 ( reposiTUm)
Ruch, B., Jech, M., Pobegen, G., & Grasser, T. (2021). Applicability of Shockley-Read-Hall Theory for Interface States. IEEE Transactions on Electron Devices, 68(4), 2092–2097. https://doi.org/10.1109/ted.2021.3049760 ( reposiTUm)
Knobloch, T., Illarionov, Y. Yu., Ducry, F., Schleich, C., Wachter, S., Watanabe, K., Taniguchi, T., Mueller, T., Waltl, M., Lanza, M., Vexler, M. I., Luisier, M., & Grasser, T. (2021). The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials. Nature Electronics, 4(2), 98–108. https://doi.org/10.1038/s41928-020-00529-x ( reposiTUm)
Jech, M., El-Sayed, A.-M., Tyaginov, S., Waldhör, D., Bouakline, F., Saalfrank, P., Jabs, D., Jungemann, C., Waltl, M., & Grasser, T. (2021). Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices. Physical Review Applied, 16(014026). https://doi.org/10.1103/physrevapplied.16.014026 ( reposiTUm)
Waldhoer, D., Schleich, C., Michl, J., Stampfer, B., Tselios, K., Ioannidis, E. G., Enichlmair, H., Waltl, M., & Grasser, T. (2021). Toward Automated Defect Extraction From Bias Temperature Instability Measurements. IEEE Transactions on Electron Devices, 68(8), 4057–4063. https://doi.org/10.1109/ted.2021.3091966 ( reposiTUm)
Tselios, K., Waldhör, D., Stampfer, B., Michl, J., Ioannidis, E., Enichlmair, H., Grasser, T., & Waltl, M. (2021). On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors. IEEE Transactions on Device and Materials Reliability, 21(2), 199–206. https://doi.org/10.1109/tdmr.2021.3080983 ( reposiTUm)
Illarionov, Y. Y., Knobloch, T., & Grasser, T. (2021). Crystalline Insulators for Scalable 2D Nanoelectronics. Solid-State Electronics, 185(108043), 108043. https://doi.org/10.1016/j.sse.2021.108043 ( reposiTUm)
Michl, J., Grill, A., Waldhoer, D., Goes, W., Kaczer, B., Linten, D., Parvais, B., Govoreanu, B., Radu, I., Waltl, M., & Grasser, T. (2021). Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory. IEEE Transactions on Electron Devices, 68(12), 6365–6371. https://doi.org/10.1109/ted.2021.3116931 ( reposiTUm)
Michl, J., Grill, A., Waldhoer, D., Goes, W., Kaczer, B., Linten, D., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., & Waltl, M. (2021). Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: Experimental. IEEE Transactions on Electron Devices, 68(12), 6372–6378. https://doi.org/10.1109/ted.2021.3117740 ( reposiTUm)
Waltl, M., Waldhoer, D., Tselios, K., Stampfer, B., Schleich, C., Rzepa, G., Enichlmair, H., Ioannidis, E. G., Minixhofer, R., & Grasser, T. (2021). Impact of Single-Defects on the Variability of CMOS Inverter Circuits. Microelectronics Reliability, 126(114275), 114275. https://doi.org/10.1016/j.microrel.2021.114275 ( reposiTUm)
Ruch, B., Pobegen, G., & Grasser, T. (2021). Localizing Hot-Carrier Degradation in Silicon Trench MOSFETs. IEEE Transactions on Electron Devices, 68(4), 1804–1809. https://doi.org/10.1109/ted.2021.3060697 ( reposiTUm)
Hernandez, Y., Stampfer, B., Grasser, T., & Waltl, M. (2021). Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor Technologies. Crystals, 11(9), 1150. https://doi.org/10.3390/cryst11091150 ( reposiTUm)
Das, S., Sebastian, A., Pop, E., McClellan, C. J., Franklin, A. D., Grasser, T., Knobloch, T., Illarionov, Y., Penumatcha, A. V., Appenzeller, J., Chen, Z., Zhu, W., Asselbberghs, I., Li, L.-J., Avci, U. E., Bhat, N., Anthopoulos, T. D., & Singh, R. (2021). Transistors based on two-dimensional materials for future integrated circuits. Nature Electronics, 4(11), 786–799. https://doi.org/10.1038/s41928-021-00670-1 ( reposiTUm)
Waltl, M., Waldhör, D., Tselios, K., Stampfer, B., Schleich, C., Rzepa, G., Enichlmair, H., Ioannidis, E. G., Minixhofer, R., & Grasser, T. (2021). Impact of single-defects on the variability of CMOS inverter circuits. Microelectronics Reliability, 126, 1–6. https://doi.org/10.1016/j.microrel.2021.114275 ( reposiTUm)
Feil, M. W., Puschkarsky, K., Gustin, W., Reisinger, H., & Grasser, T. (2021). On the Physical Meaning of Single-Value Activation Energies for BTI in Si and SiC MOSFET Devices. IEEE Transactions on Electron Devices, 68(1), 236–243. https://doi.org/10.1109/ted.2020.3036321 ( reposiTUm)
Schleich, C., Waldhoer, D., Waschneck, K., Feil, M. W., Reisinger, H., Grasser, T., & Waltl, M. (2021). Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies. IEEE Transactions on Electron Devices, 68(8), 4016–4021. https://doi.org/10.1109/ted.2021.3092295 ( reposiTUm)
Jech, M., Rott, G., Reisinger, H., Tyaginov, S., Rzepa, G., Grill, A., Jabs, D., Jungemann, C., Waltl, M., & Grasser, T. (2020). Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities. IEEE Transactions on Electron Devices, 67(8), 3315–3322. https://doi.org/10.1109/ted.2020.3000749 ( reposiTUm)
Stampfer, B., Schanovsky, F., Grasser, T., & Waltl, M. (2020). Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors. Micromachines, 11(4). https://doi.org/10.3390/mi11040446 ( reposiTUm)
Ruch, B., Pobegen, G., & Grasser, T. (2020). Investigation of the Temperature Dependence of Hot-Carrier Degradation in Si MOSFETs Using Spectroscopic Charge Pumping. IEEE Transactions on Electron Devices, 67(10), 4092–4098. https://doi.org/10.1109/ted.2020.3018091 ( reposiTUm)
Berens, J. V., Pobegen, G., & Grasser, T. (2020). Tunneling Effects in NH₃ Annealed 4H-SiC Trench MOSFETs. Materials Science Forum, 1004, 652–658. https://doi.org/10.4028/www.scientific.net/msf.1004.652 ( reposiTUm)
Waltl, M., Stampfer, B., Rzepa, G., Kaczer, B., & Grasser, T. (2020). Separation of Electron and Hole Trapping Components of PBTI in SiON nMOS Transistors. Microelectronics Reliability, 114(113746), 113746. https://doi.org/10.1016/j.microrel.2020.113746 ( reposiTUm)
Wen, C., Banshchikov, A. G., Illarionov, Y., Frammelsberger, W., Knobloch, T., Hui, F., Sokolov, N. S., Grasser, T., & Lanza, M. (2020). Dielectric Properties of Ultrathin CaF₂ Ionic Crystals. Advanced Materials, 32(34), 2002525-1-2002525–2002526. http://hdl.handle.net/20.500.12708/140738 ( reposiTUm)
Illarionov, Y. Yu., Knobloch, T., & Grasser, T. (2020). Native High-k Oxides for 2D Transistors. Nature Electronics, 3(8), 442–443. https://doi.org/10.1038/s41928-020-0464-2 ( reposiTUm)
Illarionov, Y. Yu., Knobloch, T., Jech, M., Lanza, M., Akinwande, D., Vexler, M. I., Mueller, T., Lemme, M. C., Fiori, G., Schwierz, F., & Grasser, T. (2020). Insulators for 2D Nanoelectronics: The Gap to Bridge. Nature Communications, 11(3385). https://doi.org/10.1038/s41467-020-16640-8 ( reposiTUm)
Stampfer, B., Simicic, M., Weckx, P., Abbasi, A., Kaczer, B., Grasser, T., & Waltl, M. (2020). Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays. IEEE Transactions on Device and Materials Reliability, 20(2), 251–257. https://doi.org/10.1109/tdmr.2020.2985109 ( reposiTUm)
Feil, M., Huerner, A., Puschkarsky, K., Schleich, C., Eichinger, T., Gustin, W., Reisinger, H., & Grasser, T. (2020). The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters. Crystals, 10(12), 1143. https://doi.org/10.3390/cryst10121143 ( reposiTUm)
Jing, X., Illarionov, Y., Yalon, E., Zhou, P., Grasser, T., Shi, Y., & Lanza, M. (2019). Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects. Advanced Functional Materials, 30(18), 1901971. https://doi.org/10.1002/adfm.201901971 ( reposiTUm)
Illarionov, Y. Y., Banshchikov, A. G., Polyushkin, D. K., Wachter, S., Knobloch, T., Thesberg, M., Vexler, M. I., Waltl, M., Lanza, M., Sokolov, N. S., Mueller, T., & Grasser, T. (2019). Reliability of Scalable MoS2 FETs With 2 nm Crystalline CaF2 Insulators. 2D Materials, 6(4), 045004. https://doi.org/10.1088/2053-1583/ab28f2 ( reposiTUm)
Filipovic, L., & Grasser, T. (2019). Editorial for the Special Issue on Miniaturized Transistors. Micromachines, 10(5), 300. https://doi.org/10.3390/mi10050300 ( reposiTUm)
Makarov, A., Kaczer, B., Chasin, A., Vandemaele, M., Bury, E., Jech, M., Grill, A., Hellings, G., El-Sayed, A.-M., Grasser, T., Linten, D., & Tyaginov, S. (2019). Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach. IEEE Electron Device Letters, 40(10), 1579–1582. https://doi.org/10.1109/led.2019.2933729 ( reposiTUm)
Ullmann, B., Puschkarsky, K., Waltl, M., Reisinger, H., & Grasser, T. (2019). Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques. IEEE Transactions on Device and Materials Reliability, 19(2), 358–362. https://doi.org/10.1109/tdmr.2019.2909993 ( reposiTUm)
Grill, A., Stampfer, B., Im, K.-S., Lee, J.-H., Ostermaier, C., Ceric, H., Waltl, M., & Grasser, T. (2019). Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs. Solid-State Electronics, 156, 41–47. https://doi.org/10.1016/j.sse.2019.02.004 ( reposiTUm)
Illarionov, Y. Yu., Banshchikov, A. G., Polyushkin, D. K., Wachter, S., Knobloch, T., Thesberg, M., Mennel, L., Paur, M., Stöger-Pollach, M., Steiger-Thirsfeld, A., Vexler, M. I., Waltl, M., Sokolov, N. S., Mueller, T., & Grasser, T. (2019). Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors. Nature Electronics, 2(6), 230–235. https://doi.org/10.1038/s41928-019-0256-8 ( reposiTUm)
Makarov, A., Kaczer, B., Roussel, P., Chasin, A., Grill, A., Vandemaele, M., Hellings, G., El-Sayed, A.-M., Grasser, T., Linten, D., & Tyaginov, S. (2019). Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs. IEEE Electron Device Letters, 40(6), 870–873. https://doi.org/10.1109/led.2019.2913625 ( reposiTUm)
Toifl, A., Simonka, V., Hössinger, A., Selberherr, S., Grasser, T., & Weinbub, J. (2019). Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics. IEEE Transactions on Electron Devices, 66(7), 3060–3065. https://doi.org/10.1109/ted.2019.2916929 ( reposiTUm)
Giering, K.-U., Puschkarsky, K., Reisinger, H., Rzepa, G., Rott, G., Vollertsen, R., Grasser, T., & Jancke, R. (2019). NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling. IEEE Transactions on Electron Devices, 66(4), 1662–1668. https://doi.org/10.1109/ted.2019.2901907 ( reposiTUm)
Puschkarsky, K., Reisinger, H., Rott, G. A., Schlünder, C., Gustin, W., & Grasser, T. (2019). An Efficient Analog Compact NBTI Model for Stress and Recovery Based on Activation Energy Maps. IEEE Transactions on Electron Devices, 66(11), 4623–4630. https://doi.org/10.1109/ted.2019.2941889 ( reposiTUm)
Franco, J., Wu, Z., Rzepa, G., Ragnarsson, L.-A., Dekkers, H., Vandooren, A., Groeseneken, G., Horiguchi, N., Collaert, N., Linten, D., Grasser, T., & Kaczer, B. (2019). On the Impact of the Gate Work-Function Metal on the Charge Trapping Component of NBTI and PBTI. IEEE Transactions on Device and Materials Reliability, 19(2), 268–274. https://doi.org/10.1109/tdmr.2019.2913258 ( reposiTUm)
Berens, J., Pobegen, G., Eichinger, T., Rescher, G., & Grasser, T. (2019). Cryogenic Characterization of NH₃ Post Oxidation Annealed 4H-SiC Trench MOSFETs. Materials Science Forum, 963, 175–179. https://doi.org/10.4028/www.scientific.net/msf.963.175 ( reposiTUm)
Oliva, N., Illarionov, Y. Y., Casu, E. A., Cavalieri, M., Knobloch, T., Grasser, T., & Ionescu, A. M. (2019). Hysteresis Dynamics in Double-Gated n-Type WSe₂ FETs With High-k Top Gate Dielectric. IEEE Journal of the Electron Devices Society, 7, 1163–1169. https://doi.org/10.1109/jeds.2019.2933745 ( reposiTUm)
Ullmann, B., Jech, M., Puschkarsky, K., Rott, G. A., Waltl, M., Illarionov, Y., Reisinger, H., & Grasser, T. (2019). Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: Experimental. IEEE Transactions on Electron Devices, 66(1), 232–240. https://doi.org/10.1109/ted.2018.2873419 ( reposiTUm)
Jech, M., Ullmann, B., Rzepa, G., Tyaginov, S., Grill, A., Waltl, M., Jabs, D., Jungemann, C., & Grasser, T. (2019). Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory. IEEE Transactions on Electron Devices, 66(1), 241–248. https://doi.org/10.1109/ted.2018.2873421 ( reposiTUm)
Ruch, B., Pobegen, G., Rösch, M., Vytla, R. K., & Grasser, T. (2019). Charge Pumping of Low-Voltage Silicon Trench Powers MOSFETs. IEEE Transactions on Device and Materials Reliability, 19(1), 133–139. https://doi.org/10.1109/tdmr.2019.2891794 ( reposiTUm)
Wu, Z., Franco, J., Vandooren, A., Kaczer, B., Roussel, P., Rzepa, G., Grasser, T., Linten, D., & Groeseneken, G. (2019). Improved PBTI Reliability in Junction-Less FET Fabricated at Low Thermal Budget for 3-D Sequential Integration. IEEE Transactions on Device and Materials Reliability, 19(2), 262–267. https://doi.org/10.1109/tdmr.2019.2906843 ( reposiTUm)
Berens, J., Pobegen, G., Rescher, G., Aichinger, T., & Grasser, T. (2019). NH₃ and NO + NH₃ Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability. IEEE Transactions on Electron Devices, 66(11), 4692–4697. https://doi.org/10.1109/ted.2019.2941723 ( reposiTUm)
Puschkarsky, K., Grasser, T., Aichinger, T., Gustin, W., & Reisinger, H. (2019). Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability. IEEE Transactions on Electron Devices, 66(11), 4604–4616. https://doi.org/10.1109/ted.2019.2938262 ( reposiTUm)
Jech, M., El-Sayed, A.-M. B., Tyaginov, S., Shluger, A. L., & Grasser, T. (2019). Ab Initio treatment of silicon-hydrogen bond rupture at Si/SiO₂ interfaces. Physical Review B, 100(19), Article 195302. https://doi.org/10.1103/physrevb.100.195302 ( reposiTUm)
Puschkarsky, K., Reisinger, H., Schlünder, C., Gustin, W., & Grasser, T. (2018). Voltage-Dependent Activation Energy Maps for Analytic Lifetime Modeling of NBTI Without Time Extrapolation. IEEE Transactions on Electron Devices, 65(11), 4764–4771. https://doi.org/10.1109/ted.2018.2870170 ( reposiTUm)
Tyaginov, S. E., Makarov, A. A., Jech, M., Vexler, M. I., Franco, J., Kaczer, B., & Grasser, T. (2018). Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal-Oxide-Semiconductor Structures. Semiconductors, 52(2), 242–247. https://doi.org/10.1134/s1063782618020203 ( reposiTUm)
Rzepa, G., Franco, J., O’Sullivan, B., Subirats, A., Simicic, M., Hellings, G., Weckx, P., Jech, M., Knobloch, T., Waltl, M., Roussel, P. J., Linten, D., Kaczer, B., & Grasser, T. (2018). Comphy -- A Compact-Physics Framework for Unified Modeling of BTI. Microelectronics Reliability, 85, 49–65. https://doi.org/10.1016/j.microrel.2018.04.002 ( reposiTUm)
Kaczer, B., Franco, J., Weckx, P., Roussel, Ph. J., Putcha, V., Bury, E., Simicic, M., Chasin, A., Linten, D., Parvais, B., Catthoor, F., Rzepa, G., Waltl, M., & Grasser, T. (2018). A Brief Overview of Gate Oxide Defect Properties and Their Relation to MOSFET Instabilities and Device and Circuit Time-Dependent Variability. Microelectronics Reliability, 81, 186–194. https://doi.org/10.1016/j.microrel.2017.11.022 ( reposiTUm)
Stathis, J. H., Mahapatra, S., & Grasser, T. (2018). Controversial Issues in Negative Bias Temperature Instability. Microelectronics Reliability, 81, 244–251. https://doi.org/10.1016/j.microrel.2017.12.035 ( reposiTUm)
Stampfer, B., Zhang, F., Illarionov, Y. Y., Knobloch, T., Wu, P., Waltl, M., Grill, A., Appenzeller, J., & Grasser, T. (2018). Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors. ACS Nano, 12(6), 5368–5375. https://doi.org/10.1021/acsnano.8b00268 ( reposiTUm)
Makarov, A. A., Tyaginov, S. E., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M. I., Linten, D., & Grasser, T. (2018). Analysis of the Features of Hot-Carrier Degradation in FinFETs. Semiconductors, 52(10), 1298–1302. https://doi.org/10.1134/s1063782618100081 ( reposiTUm)
Goes, W., Wimmer, Y., El-Sayed, A.-M., Rzepa, G., Jech, M., Shluger, A. L., & Grasser, T. (2018). Identification of Oxide Defects in Semiconductor Devices: A Systematic Approach Linking DFT to Rate Equations and Experimental Evidence. Microelectronics Reliability, 87, 286–320. https://doi.org/10.1016/j.microrel.2017.12.021 ( reposiTUm)
El-Sayed, A.-M., Watkins, M. B., Grasser, T., & Shluger, A. L. (2018). Effect of Electric Field on Migration of Defects in Oxides: Vacancies and Interstitials in Bulk MgO. Physical Review B, 98(064102). https://doi.org/10.1103/physrevb.98.064102 ( reposiTUm)
Tyaginov, S. E., Makarov, A. A., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M. I., Linten, D., & Grasser, T. (2018). Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs. Semiconductors, 52(13), 1738–1742. https://doi.org/10.1134/s1063782618130183 ( reposiTUm)
Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Schanovski, F., Stampfer, B., Furchi, M. M., Müller, T., & Grasser, T. (2018). A Physical Model for the Hysteresis in MoS2 Transistors. IEEE Journal of the Electron Devices Society, 6, 972–978. https://doi.org/10.1109/jeds.2018.2829933 ( reposiTUm)
Puschkarsky, K., Reisinger, H., Aichinger, T., Gustin, W., & Grasser, T. (2018). Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation. IEEE Transactions on Device and Materials Reliability, 18(2), 144–153. https://doi.org/10.1109/tdmr.2018.2813063 ( reposiTUm)
Rescher, G., Pobegen, G., Aichinger, T., & Grasser, T. (2018). Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement Technique. IEEE Transactions on Electron Devices, 65(4), 1419–1426. https://doi.org/10.1109/ted.2018.2803283 ( reposiTUm)
Rescher, G., Pobegen, G., Aichinger, T., & Grasser, T. (2018). Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device Preconditioning. Materials Science Forum, 924, 671–675. https://doi.org/10.4028/www.scientific.net/msf.924.671 ( reposiTUm)
Illarionov, Y. Yu., Smithe, K. K. H., Waltl, M., Knobloch, T., Pop, E., & Grasser, T. (2017). Improved Hysteresis and Reliability of MoS₂ Transistors With High-Quality CVD Growth and Al₂O₃ Encapsulation. IEEE Electron Device Letters, 38(12), 1763–1766. https://doi.org/10.1109/led.2017.2768602 ( reposiTUm)
Illarionov, Y. Y., Knobloch, T., Waltl, M., Rzepa, G., Pospischil, A., Polyushkin, D., Furchi, M. M., Mueller, T., & Grasser, T. (2017). Energetic mapping of oxide traps in MoS₂ field-effect transistors. 2D Materials, 4(2), Article 025108. https://doi.org/10.1088/2053-1583/aa734a ( reposiTUm)
Stradiotto, R., Pobegen, G., Ostermaier, C., Waltl, M., Grill, A., & Grasser, T. (2017). Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs. IEEE Transactions on Electron Devices, 64(3), 1045–1052. https://doi.org/10.1109/ted.2017.2655367 ( reposiTUm)
Kaczer, B., Franco, J., Tyaginov, S., Jech, M., Rzepa, G., Grasser, T., O’Sullivan, B. J., Ritzenhaler, R., Schram, T., Spessot, A., Linten, D., & Horiguchi, N. (2017). Mapping of CMOS FET Degradation in Bias Space--Application to Dram Peripheral Devices. Journal of Vacuum Science & Technology B, 35(1), 01A109. https://doi.org/10.1116/1.4972872 ( reposiTUm)
Ostermaier, C., Lagger, P., Prechtl, G., Grill, A., Grasser, T., & Pogany, D. (2017). Dynamics of Carrier Transport via AlGaN Barrier in AlGaN/GaN MIS-HEMTs. Applied Physics Letters, 110(17), 173502. https://doi.org/10.1063/1.4982231 ( reposiTUm)
Waltl, M., Rzepa, G., Grill, A., Goes, W., Franco, J., Kaczer, B., Witters, L., Mitard, J., Horiguchi, N., & Grasser, T. (2017). Superior NBTI in High-k SiGe Transistors - Part I: Experimental. IEEE Transactions on Electron Devices, 64(5), 2092–2098. https://doi.org/10.1109/ted.2017.2686086 ( reposiTUm)
Waltl, M., Rzepa, G., Grill, A., Goes, W., Franco, J., Kaczer, B., Witters, L., Mitard, J., Horiguchi, N., & Grasser, T. (2017). Superior NBTI in High-k SiGe Transistors - Part II: Theory. IEEE Transactions on Electron Devices, 64(5), 2099–2105. https://doi.org/10.1109/ted.2017.2686454 ( reposiTUm)
Illarionov, Yu. Yu., Waltl, M., Rzepa, G., Knobloch, T., Kim, J.-S., Akinwande, D., & Grasser, T. (2017). Highly-Stable Black Phosphorus Field-Effect Transistors with Low Density of Oxide Traps. Npj 2D Materials and Applications, 1(23). https://doi.org/10.1038/s41699-017-0025-3 ( reposiTUm)
Song, X., Hui, F., Knobloch, T., Wang, B., Fan, Z., Grasser, T., Jing, X., Shi, Y., & Lanza, M. (2017). Piezoelectricity in Two Dimensions: Graphene vs. Molybdenum Disulfide. Applied Physics Letters, 111(8), 083107. https://doi.org/10.1063/1.5000496 ( reposiTUm)
Sharma, P., Tyaginov, S., Rauch, S. E., Franco, J., Makarov, A., Vexler, M. I., Kaczer, B., & Grasser, T. (2017). Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the Drift-Diffusion Approach. IEEE Electron Device Letters, 38(2), 160–163. https://doi.org/10.1109/led.2016.2645901 ( reposiTUm)
Ullmann, B., & Grasser, T. (2017). Transformation: nanotechnology—challenges in transistor design and future technologies. Elektrotechnik Und Informationstechnik : E & i, 134(7), 349–354. https://doi.org/10.1007/s00502-017-0534-y ( reposiTUm)
Rescher, G., Pobegen, G., Aichinger, T., & Grasser, T. (2017). Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique. Materials Science Forum, 897, 143–146. https://doi.org/10.4028/www.scientific.net/msf.897.143 ( reposiTUm)
Wimmer, Y., El-Sayed, A.-M., Gös, W., Grasser, T., & Shluger, A. L. (2016). Role of hydrogen in volatile behaviour of defects in SiO₂-based electronic devices. Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences, 472(2190). https://doi.org/10.1098/rspa.2016.0009 ( reposiTUm)
Rescher, G., Pobegen, G., & Grasser, T. (2016). Threshold Voltage Instabilities of Present SiC-Power MOSFETs Under Positive Bias Temperature Stress. Materials Science Forum, 858, 481–484. https://doi.org/10.4028/www.scientific.net/msf.858.481 ( reposiTUm)
Illarionov, Y. Yu., Waltl, M., Smith, A. D., Vaziri, S., Ostling, M., Lemme, M. C., & Grasser, T. (2016). Bias-Temperature Instability on the Back Gate of Single-Layer Double-Gated Graphene Field-Effect Transistors. Japanese Journal of Applied Physics, 55(4S), 04EP03. https://doi.org/10.7567/jjap.55.04ep03 ( reposiTUm)
Illarionov, Y. Y., Rzepa, G., Waltl, M., Knobloch, T., Grill, A., Furchi, M. M., Mueller, T., & Grasser, T. (2016). The role of charge trapping in Mo₂/SiO₂ and MoS₂/hBN field-effect transistors. 2D Materials, 3(3), 035004. https://doi.org/10.1088/2053-1583/3/3/035004 ( reposiTUm)
Rupp, K., Weinbub, J., Jüngel, A., & Grasser, T. (2016). Pipelined Iterative Solvers with Kernel Fusion for Graphics Processing Units. ACM Transactions on Mathematical Software, 43(2), 1–27. https://doi.org/10.1145/2907944 ( reposiTUm)
Kaczer, B., Franco, J., Weckx, P., Roussel, Ph. J., Simicic, M., Putcha, V., Bury, E., Cho, M., Degraeve, R., Linten, D., Groeseneken, G., Debacker, P., Parvais, B., Raghavan, P., Catthoor, F., Rzepa, G., Waltl, M., Goes, W., & Grasser, T. (2016). The Defect-Centric Perspective of Device and Circuit Reliability - From Gate Oxide Defects to Circuits. Solid-State Electronics, 125, 52–62. https://doi.org/10.1016/j.sse.2016.07.010 ( reposiTUm)
Stradiotto, R., Pobegen, G., Ostermaier, C., & Grasser, T. (2016). Characterization of Charge Trapping Phenomena at III-N/Dielectric Interfaces. Solid-State Electronics, 125, 142–153. https://doi.org/10.1016/j.sse.2016.07.017 ( reposiTUm)
Rupp, K., Tillet, P., Rudolf, F., Weinbub, J., Morhammer, A., Grasser, T., Jüngel, A., & Selberherr, S. (2016). ViennaCL---Linear Algebra Library for Multi- and Many-Core Architectures. SIAM Journal on Scientific Computing, 38(5), S412–S439. https://doi.org/10.1137/15m1026419 ( reposiTUm)
Tyaginov, S., Jech, M., Franco, J., Sharma, P., Kaczer, B., & Grasser, T. (2016). Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON n-MOSFETs. IEEE Electron Device Letters, 37(1), 84–87. https://doi.org/10.1109/led.2015.2503920 ( reposiTUm)
Jech, M., Sharma, P., Tyaginov, S., Rudolf, F., & Grasser, T. (2016). On the Limits of Applicability of Drift-Diffusion Based Hot Carrier Degradation Modeling. Japanese Journal of Applied Physics, 55(4S), 04ED14. https://doi.org/10.7567/jjap.55.04ed14 ( reposiTUm)
Jing, X., Panholzer, E., Song, X., Grustan-Gutierrez, E., Hui, F., Shi, Y., Benstetter, G., Illarionov, Y., Grasser, T., & Lanza, M. (2016). Fabrication of Scalable and Ultra Low Power Photodetectors with High Light/Dark Current Ratios Using Polycrystalline Monolayer MoS2 Sheets. Nano Energy, 30, 494–502. https://doi.org/10.1016/j.nanoen.2016.10.032 ( reposiTUm)
Illarionov, Y. Y., Waltl, M., Rzepa, G., Kim, J.-S., Kim, S., Dodabalapur, A., Akinwande, D., & Grasser, T. (2016). Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors. ACS Nano, 10(10), 9543–9549. https://doi.org/10.1021/acsnano.6b04814 ( reposiTUm)
Sharma, P., Tyaginov, S., Jech, M., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J.-M., Ceric, H., & Grasser, T. (2016). The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in n- and p-channel LDMOS Devices. Solid-State Electronics, 115, 185–191. https://doi.org/10.1016/j.sse.2015.08.014 ( reposiTUm)
Rupp, K., Jungemann, C., Hong, S.-M., Bina, M., Grasser, T., & Jüngel, A. (2016). A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation. Journal of Computational Electronics. https://doi.org/10.1007/s10825-016-0828-z ( reposiTUm)
Illarionov, Yu. Yu., Vexler, M. I., Karner, M., Tyaginov, S. E., Cervenka, J., & Grasser, T. (2015). TCAD Simulation of Tunneling Leakage Current in CaF2/Si(111) MIS Structures. Current Applied Physics, 15(2), 78–83. https://doi.org/10.1016/j.cap.2014.10.015 ( reposiTUm)
Coppeta, R. A., Holec, D., Ceric, H., & Grasser, T. (2015). Evaluation of Dislocation Energy in Thin Films. Philosophical Magazine, 95(2), 186–209. https://doi.org/10.1080/14786435.2014.994573 ( reposiTUm)
Vexler, M. I., Illarionov, Yu. Yu., Tyaginov, S. E., & Grasser, T. (2015). Adaptation of the Model of Tunneling in a Metal/CaF2/Si(111) System for Use in Industrial Simulators of MIS Devices. Semiconductors, 49(2), 259–263. https://doi.org/10.1134/s1063782615020207 ( reposiTUm)
El-Sayed, A.-M., Wimmer, Y., Goes, W., Grasser, T., Afanas’ev, V. V., & Shluger, A. L. (2015). Theoretical Models of Hydrogen-Induced Defects in Amorphous Silicon Dioxide. Physical Review B, 92(014107). https://doi.org/10.1103/physrevb.92.014107 ( reposiTUm)
El-Sayed, A.-M., Watkins, M. B., Grasser, T., Afanas’ev, V. V., & Shluger, A. L. (2015). Hydrogen-Induced Rupture of Strained Si-O Bonds in Amorphous Silicon Dioxide. Physical Review Letters, 114(115503). https://doi.org/10.1103/physrevlett.114.115503 ( reposiTUm)
El-Sayed, A.-M., Watkins, M. B., Grasser, T., Afanas’ev, V. V., & Shluger, A. L. (2015). Hole Trapping at Hydrogenic Defects in Amorphous Silicon Dioxide. Microelectronic Engineering, 147, 141–144. https://doi.org/10.1016/j.mee.2015.04.073 ( reposiTUm)
Tyaginov, S., Bina, M., Franco, J., Wimmer, Y., Kaczer, B., & Grasser, T. (2015). On the Importance of Electron-Electron Scattering for Hot-Carrier Degradation. Japanese Journal of Applied Physics, 54(4S), 04DC18. https://doi.org/10.7567/jjap.54.04dc18 ( reposiTUm)
Sharma, P., Tyaginov, S. E., Wimmer, Y., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J. M., Minixhofer, R., Ceric, H., & Grasser, T. (2015). Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation. IEEE Transactions on Electron Devices, 62(6), 1811–1818. https://doi.org/10.1109/ted.2015.2421282 ( reposiTUm)
Sharma, P., Tyaginov, S., Wimmer, Y., Rudolf, F., Rupp, K., Enichlmair, H., Park, J.-M., Ceric, H., & Grasser, T. (2015). Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs. Microelectronics Reliability, 55(9–10), 1427–1432. https://doi.org/10.1016/j.microrel.2015.06.021 ( reposiTUm)
Kaczer, B., Franco, J., Roussel, P. J., Groeseneken, G., Chiarella, T., Horiguchi, N., & Grasser, T. (2015). Extraction of The Random Component of Time-Dependent Variability Using Matched Pairs. IEEE Electron Device Letters, 36(4), 300–302. https://doi.org/10.1109/led.2015.2404293 ( reposiTUm)
Illarionov, Y., Bina, M., Tyaginov, S., Rott, K., Kaczer, B., Reisinger, H., & Grasser, T. (2015). Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs. IEEE Transactions on Electron Devices, 62(9), 2730–2737. https://doi.org/10.1109/ted.2015.2454433 ( reposiTUm)
Illarionov, Y., Smith, A., Vaziri, S., Ostling, M., Mueller, T., Lemme, M., & Grasser, T. (2015). Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences. IEEE Transactions on Electron Devices, 62(11), 3876–3881. https://doi.org/10.1109/ted.2015.2480704 ( reposiTUm)
Tyaginov, S., Wimmer, Y., & Grasser, T. (2014). Modeling of Hot-Carrier Degradation Based on Thorough Carrier Transport Treatment. Facta Universitatis - Series: Electronics and Energetics, 27(4), 479–508. https://doi.org/10.2298/fuee1404479t ( reposiTUm)
Rott, G. A., Rott, K., Reisinger, H., Gustin, W., & Grasser, T. (2014). Mixture of Negative Bias Temperature Instability and Hot-Carrier Driven Threshold Voltage Degradation of 130 nm Technology p-Channel Transistors. Microelectronics Reliability, 54(9–10), 2310–2314. https://doi.org/10.1016/j.microrel.2014.07.040 ( reposiTUm)
Rupp, K., Tillet, P., Jüngel, A., & Grasser, T. (2014). Achieving Portable High Performance for Iterative Solvers on Accelerators. Proceedings in Applied Mathematics and Mechanics, 14(1), 963–964. http://hdl.handle.net/20.500.12708/157791 ( reposiTUm)
Camargo, V. V. A., Kaczer, B., Grasser, T., & Wirth, G. (2014). Circuit Simulation of Workload-Dependent RTN and BTI Based on Trap Kinetics. Microelectronics Reliability, 54(11), 2364–2370. http://hdl.handle.net/20.500.12708/157788 ( reposiTUm)
Tyaginov, S. E., Illarionov, Yu. Yu., Vexler, M. I., Bina, M., Cervenka, J., Franco, J., Kaczer, B., & Grasser, T. (2014). Modeling of Deep-Submicron Silicon-Based MISFETs with Calcium Fluoride Dielectric. Journal of Computational Electronics, 13(3), 733–738. https://doi.org/10.1007/s10825-014-0593-9 ( reposiTUm)
Illarionov, Yu. Yu., Smith, A. D., Vaziri, S., Ostling, M., Mueller, T., Lemme, M. C., & Grasser, T. (2014). Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors. Applied Physics Letters, 105(14), 143507. https://doi.org/10.1063/1.4897344 ( reposiTUm)
Grasser, T., Rott, K., Reisinger, H., Waltl, M., Schanovsky, F., & Kaczer, B. (2014). NBTI in Nanoscale MOSFETs-The Ultimate Modeling Benchmark. IEEE Transactions on Electron Devices, 61(11), 3586–3593. https://doi.org/10.1109/ted.2014.2353578 ( reposiTUm)
Illarionov, Y. Yu., Bina, M., Tyaginov, S. E., & Grasser, T. (2014). An Analytical Approach for the Determination of the Lateral Trap Position in Ultra-Scaled MOSFETs. Japanese Journal of Applied Physics, 53(4S), 04EC22. https://doi.org/10.7567/jjap.53.04ec22 ( reposiTUm)
Pobegen, G., Aichinger, T., Salinaro, A., & Grasser, T. (2014). Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs. Materials Science Forum, 778–780, 959–962. https://doi.org/10.4028/www.scientific.net/msf.778-780.959 ( reposiTUm)
Bina, M., Tyaginov, S., Franco, J., Rupp, K., Wimmer, Y., Osintsev, D., Kaczer, B., & Grasser, T. (2014). Predictive Hot-Carrier Modeling of n-Channel MOSFETs. IEEE Transactions on Electron Devices, 61(9), 3103–3110. https://doi.org/10.1109/ted.2014.2340575 ( reposiTUm)
Pobegen, G., & Grasser, T. (2013). Efficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps. Materials Science Forum, 740–742, 757–760. https://doi.org/10.4028/www.scientific.net/msf.740-742.757 ( reposiTUm)
Franco, J., Kaczer, B., Mitard, J., Toledano-Luque, M., Roussel, P. J., Witters, L., Grasser, T., & Groeseneken, G. (2013). NBTI Reliability of SiGe and Ge Channel pMOSFETs With SiO2/HfO2 Dielectric Stack. IEEE Transactions on Device and Materials Reliability, 13(4), 497–506. https://doi.org/10.1109/tdmr.2013.2281731 ( reposiTUm)
Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, Ph. J., Cho, M., Kauerauf, T., Mitard, J., Eneman, G., Witters, L., Grasser, T., & Groeseneken, G. (2013). Superior Reliability of High Mobility (Si)Ge Channel pMOSFETs. Microelectronic Engineering, 109, 250–256. https://doi.org/10.1016/j.mee.2013.03.001 ( reposiTUm)
Pobegen, G., & Grasser, T. (2013). On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time Scale. IEEE Transactions on Electron Devices, 60(7), 2148–2155. https://doi.org/10.1109/ted.2013.2264816 ( reposiTUm)
Pobegen, G., Tyaginov, S., Nelhiebel, M., & Grasser, T. (2013). Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation. IEEE Electron Device Letters, 34(8), 939–941. https://doi.org/10.1109/led.2013.2262521 ( reposiTUm)
Pobegen, G., Nelhiebel, M., de Filippis, S., & Grasser, T. (2013). Accurate High Temperature Measurements Using Local Polysilicon Heater Structures. IEEE Transactions on Device and Materials Reliability, 14(1), 169–176. https://doi.org/10.1109/tdmr.2013.2265015 ( reposiTUm)
Camargo, V. V. A., Kaczer, B., Wirth, G., Grasser, T., & Groeseneken, G. (2013). Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 22(2), 280–285. https://doi.org/10.1109/tvlsi.2013.2240323 ( reposiTUm)
Kaczer, B., Toledano-Luque, M., Goes, W., Grasser, T., & Groeseneken, G. (2013). Gate Current Random Telegraph Noise and Single Defect Conduction. Microelectronic Engineering, 109, 123–125. https://doi.org/10.1016/j.mee.2013.03.110 ( reposiTUm)
Franco, J., Kaczer, B., Roussel, P. J., Mitard, J., Cho, M., Witters, L., Grasser, T., & Groeseneken, G. (2013). SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices-Part I: NBTI. IEEE Transactions on Electron Devices, 60(1), 396–404. https://doi.org/10.1109/ted.2012.2225625 ( reposiTUm)
Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, P. J., Kauerauf, T., Mitard, J., Witters, L., Grasser, T., & Groeseneken, G. (2013). SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices-Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability Issues. IEEE Transactions on Electron Devices, 60(1), 405–412. https://doi.org/10.1109/ted.2012.2225624 ( reposiTUm)
Toledano-Luque, M., Kaczer, B., Grasser, T., Roussel, P. J., Franco, J., & Groeseneken, G. (2013). Toward a Streamlined Projection of Small Device Bias Temperature Instability Lifetime Distributions. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 31(1), 01A114. https://doi.org/10.1116/1.4772587 ( reposiTUm)
Aichinger, T., Nelhiebel, M., & Grasser, T. (2013). Refined NBTI Characterization of Arbitrarily Stressed PMOS Devices at Ultra-low and Unique Temperatures. Microelectronics Reliability, 53(7), 937–946. https://doi.org/10.1016/j.microrel.2013.03.007 ( reposiTUm)
Franco, J., Kaczer, B., Toledano-Luque, M., Bukhori, M. F., Roussel, Ph. J., Grasser, T., Asenov, A., & Groeseneken, G. (2012). Impact of Individual Charged Gate-Oxide Defects on the Entire ID -VG Characteristic of Nanoscaled FETs. IEEE Electron Device Letters, 33(6), 779–781. http://hdl.handle.net/20.500.12708/163672 ( reposiTUm)
Schanovsky, F., Baumgartner, O., Sverdlov, V., & Grasser, T. (2012). A Multi Scale Modeling Approach to Non-Radiative Multi Phonon Transitions at Oxide Defects in MOS Structures. Journal of Computational Electronics, 11(3), 218–224. https://doi.org/10.1007/s10825-012-0403-1 ( reposiTUm)
Grasser, T. (2012). Stochastic Charge Trapping in Oxides: From Random Telegraph Noise to Bias Temperature Instabilities. Microelectronics Reliability, 52(1), 39–70. https://doi.org/10.1016/j.microrel.2011.09.002 ( reposiTUm)
Vasicek, M., Cervenka, J., Esseni, D., Palestri, P., & Grasser, T. (2012). Applicability of Macroscopic Transport Models to Decananometer MOSFETs. IEEE Transactions on Electron Devices, 59(3), 639–646. https://doi.org/10.1109/ted.2011.2181177 ( reposiTUm)
Franco, J., Graziano, S., Kaczer, B., Crupi, F., Ragnarsson, L.-Å., Grasser, T., & Groeseneken, G. (2012). BTI Reliability of Ultra-Thin EOT MOSFETs for Sub-Threshold Logic. Microelectronics Reliability, 52(9–10), 1932–1935. https://doi.org/10.1016/j.microrel.2012.06.058 ( reposiTUm)
Rott, K., Reisinger, H., Aresu, S., Schlünder, C., Kölpin, K., Gustin, W., & Grasser, T. (2012). New Insights on the PBTI Phenomena in SiON pMOSFETs. Microelectronics Reliability, 52(9–10), 1891–1894. https://doi.org/10.1016/j.microrel.2012.06.015 ( reposiTUm)
Toledano-Luque, M., Kaczer, B., Franco, J., Roussel, Ph. J., Grasser, T., & Groeseneken, G. (2012). Defect-Centric Perspective of Time-Dependent BTI Variability. Microelectronics Reliability, 52(9–10), 1883–1890. https://doi.org/10.1016/j.microrel.2012.06.120 ( reposiTUm)
Starkov, I., Tyaginov, S., Enichlmair, H., Cervenka, J., Jungemann, C., Carniello, S., Park, J. M., Ceric, H., & Grasser, T. (2011). Hot-Carrier Degradation Caused Interface State Profile-Simulation versus Experiment. Journal of Vacuum Science & Technology B, 29(1), 01AB09. https://doi.org/10.1116/1.3534021 ( reposiTUm)
Kaczer, B., Grasser, T., Franco, J., Toledano-Luque, M., Roussel, Ph. J., Cho, M., Simoen, E., & Groeseneken, G. (2011). Recent Trends in Bias Temperature Instability. Journal of Vacuum Science & Technology B, 29, 01AB01-1-01AB01-7. http://hdl.handle.net/20.500.12708/161748 ( reposiTUm)
Schanovsky, F., Gös, W., & Grasser, T. (2011). Multiphonon Hole Trapping from First Principles. Journal of Vacuum Science & Technology B, 29(1), 01A201. https://doi.org/10.1116/1.3533269 ( reposiTUm)
Starkov, I., Tyaginov, S., Enichlmair, H., Park, J. M., Ceric, H., & Grasser, T. (2011). Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements. Solid State Phenomena, 178–179, 267–272. https://doi.org/10.4028/www.scientific.net/ssp.178-179.267 ( reposiTUm)
Tyaginov, S., Starkov, I., Enichlmair, H., Jungemann, Ch., Park, J. M., Seebacher, E., Orio, R., Ceric, H., & Grasser, T. (2011). An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation. Microelectronics Reliability, 51(9–11), 1525–1529. https://doi.org/10.1016/j.microrel.2011.07.089 ( reposiTUm)
Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, Ph. J., Hehenberger, P. P., Grasser, T., Mitard, J., Eneman, G., Witters, L., Hoffmann, T. Y., & Groeseneken, G. (2011). On the impact of the Si passivation layer thickness on the NBTI of nanoscaled Si0.45Ge0.55 pMOSFETs. Microelectronic Engineering, 88(7), 1388–1391. https://doi.org/10.1016/j.mee.2011.03.065 ( reposiTUm)
Toledano-Luque, M., Kaczer, B., Simoen, E., Roussel, Ph. J., Veloso, A., Grasser, T., & Groeseneken, G. (2011). Temperature and Voltage Dependences of the Capture and Emission Times of Individual Traps in High-k Dielectrics. Microelectronic Engineering, 88(7), 1243–1246. https://doi.org/10.1016/j.mee.2011.03.097 ( reposiTUm)
Goes, W., Schanovsky, F., Reisinger, H., Kaczer, B., & Grasser, T. (2011). Bistable Defects as the Cause for NBTI and RTN. Solid State Phenomena, 178–179, 473–482. https://doi.org/10.4028/www.scientific.net/ssp.178-179.473 ( reposiTUm)
Toledano-Luque, M., Kaczer, B., Roussel, Ph. J., Franco, J., Ragnarsson, L. Å., Grasser, T., & Groeseneken, G. (2011). Depth Localization of Positive Charge Trapped in Silicon Oxynitride Field Effect Transistors after Positive and Negative Gate Bias Temperature Stress. Applied Physics Letters, 98(18), 183506. https://doi.org/10.1063/1.3586780 ( reposiTUm)
Toledano-Luque, M., Kaczer, B., Roussel, Ph., Cho, M. J., Grasser, T., & Groeseneken, G. (2011). Temperature Dependence of the Emission and Capture Times of SiON Individual Traps after Positive Bias Temperature Stress. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 29(1), 01AA04. https://doi.org/10.1116/1.3532947 ( reposiTUm)
Grasser, T., Kaczer, B., Gös, W., Reisinger, H., Aichinger, T., Hehenberger, P. P., Wagner, P.-J., Schanovsky, F., Franco, J., Toledano-Luque, M., & Nelhiebel, M. (2011). The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps. IEEE Transactions on Electron Devices, 58(11), 3652–3666. https://doi.org/10.1109/ted.2011.2164543 ( reposiTUm)
Pobegen, G., Aichinger, T., Grasser, T., & Nelhiebel, M. (2011). Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETs. Microelectronics Reliability, 51(9–11), 1530–1534. https://doi.org/10.1016/j.microrel.2011.06.024 ( reposiTUm)
Schanovsky, F., Gös, W., & Grasser, T. (2010). An Advanced Description of Oxide Traps in MOS Transistors and its Relation to DFT. Journal of Computational Electronics, 9(3–4), 135–140. https://doi.org/10.1007/s10825-010-0323-x ( reposiTUm)
Grasser, T., Reisinger, H., Wagner, P.-J., & Kaczer, B. (2010). Time-Dependent Defect Spectroscopy for Characterization of Border Traps in Metal-Oxide-Semiconductor Transistors. Physical Review B, 82(245318). https://doi.org/10.1103/physrevb.82.245318 ( reposiTUm)
Tyaginov, S. E., Starkov, I., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J. M., Enichlmair, H., Karner, M., Kernstock, C., Seebacher, E., Minixhofer, R., Ceric, H., & Grasser, T. (2010). Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling. Microelectronics Reliability, 50, 1267–1272. http://hdl.handle.net/20.500.12708/168176 ( reposiTUm)
Kaczer, B., Roussel, P. J., Grasser, T., & Groeseneken, G. (2010). Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices-Application to NBTI. IEEE Electron Device Letters, 31(5), 411–413. https://doi.org/10.1109/led.2010.2044014 ( reposiTUm)
Ryan, J. T., Lenahan, P. M., Grasser, T., & Enichlmair, H. (2010). Observations of Negative Bias Temperature Instability Defect Generation via On The Fly Electron Spin Resonance. Applied Physics Letters, 96(22), 223509. https://doi.org/10.1063/1.3428783 ( reposiTUm)
Rupp, K., Jüngel, A., & Grasser, T. (2010). Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation for Semiconductors. Journal of Computational Physics, 229, 8750–8765. http://hdl.handle.net/20.500.12708/167168 ( reposiTUm)
Aichinger, T., Nelhiebel, M., Einspieler, S., & Grasser, T. (2010). In Situ Poly Heater-A Reliable Tool for Performing Fast and Defined Temperature Switches on Chip. IEEE Transactions on Device and Materials Reliability, 10(1), 3–8. http://hdl.handle.net/20.500.12708/166946 ( reposiTUm)
Aichinger, T., Nelhiebel, M., Einspieler, S., & Grasser, T. (2010). Observing Two Stage Recovery of Gate Oxide Damage Created under Negative Bias Temperature Stress. Journal of Applied Physics, 107, 024508-1-024508–8. http://hdl.handle.net/20.500.12708/167854 ( reposiTUm)
Aichinger, T., Nelhiebel, M., & Grasser, T. (2010). Energetic Distribution of Oxide Traps created under Negative Bias Temperature Stress and their Relation to Hydrogen. Applied Physics Letters, 96, 133511-1-133511–133513. http://hdl.handle.net/20.500.12708/166969 ( reposiTUm)
Reisinger, H., Vollertsen, R. P., Wagner, P.-J., Huttner, T., Martin, A., Aresu, S., Gustin, W., Grasser, T., & Schlünder, C. (2009). A Study of NBTI and Short-Term Threshold Hysteresis of Thin Nitrided and Thick Non-Nitrided Oxides. IEEE Transactions on Device and Materials Reliability, 9(2), 106–114. https://doi.org/10.1109/tdmr.2009.2021389 ( reposiTUm)
Hehenberger, Ph., Wagner, P.-J., Reisinger, H., & Grasser, T. (2009). On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress. Microelectronics Reliability, 49(9–11), 1013–1017. https://doi.org/10.1016/j.microrel.2009.06.040 ( reposiTUm)
Vexler, M. I., Sokolov, N. S., Suturin, S. M., Banshchikov, A. G., Tyaginov, S. E., & Grasser, T. (2009). Electrical Characterization and Modeling of the Au/CaF₂/nSi(111) Sructures with High-Quality Tunnel-Thin Fluoride Layer. Journal of Applied Physics, 105(8), 083716. https://doi.org/10.1063/1.3110066 ( reposiTUm)
Grasser, T., & Kaczer, B. (2009). Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs. IEEE Transactions on Electron Devices, 56(5), 1056–1062. https://doi.org/10.1109/ted.2009.2015160 ( reposiTUm)
Tyaginov, S., Sverdlov, V., Starkov, I., Gös, W., & Grasser, T. (2009). Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate. Microelectronics Reliability, 49(9–11), 998–1002. https://doi.org/10.1016/j.microrel.2009.06.018 ( reposiTUm)
Kaczer, B., Veloso, A., Roussel, Ph. J., Grasser, T., & Groeseneken, G. (2009). Investigation of Bias-Temperature Instability in Work-Function-Tuned High-k/Metal-Gate Stacks. Journal of Vacuum Science & Technology B, 27(1), 459–462. http://hdl.handle.net/20.500.12708/165460 ( reposiTUm)
Tyaginov, S. E., Vexler, M. I., Sokolov, N. S., Suturin, S. M., Banshchikov, A. G., Grasser, T., & Meinerzhagen, B. (2009). Determination of Correlation Length for Thickness Fluctuations in Thin Oxide and Fluoride Films. Journal of Physics D: Applied Physics, 42(11), 115307. https://doi.org/10.1088/0022-3727/42/11/115307 ( reposiTUm)
Aichinger, T., Nelhiebel, M., & Grasser, T. (2009). A Combined Study of p- and n-Channel MOS Devices to Investigate the Energetic Distribution of Oxide Traps After NBTI. IEEE Transactions on Electron Devices, 56(12), 3018–3026. http://hdl.handle.net/20.500.12708/166578 ( reposiTUm)
Grasser, T., Kaczer, B., Gös, W., Aichinger, T., Hehenberger, P. P., & Nelhiebel, M. (2009). Understanding Negative Bias Temperature Instability in the Context of Hole Trapping. Microelectronic Engineering, 86(7–9), 1876–1882. http://hdl.handle.net/20.500.12708/166580 ( reposiTUm)
Goes, W., Karner, M., Sverdlov, V., & Grasser, T. (2008). Charging and Discharging of Oxide Defects in Reliability Issues. IEEE Transactions on Device and Materials Reliability, 8(3), 491–500. https://doi.org/10.1109/tdmr.2008.2005247 ( reposiTUm)
Grasser, T., Gös, W., & Kaczer, B. (2008). Dispersive Transport and Negative Bias Temperature Instability: Boundary Conditions, Initial Conditions, and Transport Models. IEEE Transactions on Device and Materials Reliability, 8(1), 79–97. https://doi.org/10.1109/tdmr.2007.912779 ( reposiTUm)
Grasser, T., Wagner, P.-Jü., Hehenberger, P., Goes, W., & Kaczer, B. (2008). A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability. IEEE Transactions on Device and Materials Reliability, 8(3), 526–535. https://doi.org/10.1109/tdmr.2008.2002353 ( reposiTUm)
Vasicek, M., Cervenka, J., Wagner, M., Karner, M., & Grasser, T. (2008). A 2D Non-Parabolic Six-Moments Model. Solid-State Electronics, 52(10), 1606–1609. https://doi.org/10.1016/j.sse.2008.06.010 ( reposiTUm)
Martens, K., Kaczer, B., Grasser, T., De Jaeger, B., Meuris, M., Maes, H. E., & Groeseneken, G. (2008). Applicability of Charge Pumping on Germanium MOSFETs. IEEE Electron Device Letters, 29(12), 1364–1366. https://doi.org/10.1109/led.2008.2007582 ( reposiTUm)
Lenahan, P. M., Knowlton, B., Conley, J. F., Tonti, B., Suehle, J., & Grasser, T. (2008). Introduction to the Special Issue on the 2007 International Integrated Reliability Workshop. IEEE Transactions on Device and Materials Reliability, 8(3), 490. http://hdl.handle.net/20.500.12708/171208 ( reposiTUm)
Vasicek, M., Cervenka, J., Wagner, M., Karner, M., & Grasser, T. (2008). Parameter Modeling for Higher-Order Transport Models in UTB SOI MOSFETs. Journal of Computational Electronics, 7(3), 168–171. https://doi.org/10.1007/s10825-008-0239-x ( reposiTUm)
Aichinger, T., Nelhiebel, M., & Grasser, T. (2008). On the Temperature Dependence of NBTI Recovery. Microelectronics Reliability, 48(8–9), 1178–1184. https://doi.org/10.1016/j.microrel.2008.06.018 ( reposiTUm)
Wagner, M., Karner, M., Cervenka, J., Vasicek, M., Kosina, H., Holzer, S., & Grasser, T. (2007). Quantum Correction for DG MOSFETs. Journal of Computational Electronics, 5(4), 397–400. https://doi.org/10.1007/s10825-006-0032-7 ( reposiTUm)
Entner, R., Grasser, T., Triebl, O., Enichlmair, H., & Minixhofer, R. (2007). Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures. Microelectronics Reliability, 47(4–5), 697–699. http://hdl.handle.net/20.500.12708/168505 ( reposiTUm)
Dhar, S., Ungersböck, S. E., Kosina, H., Grasser, T., & Selberherr, S. (2007). Electron Mobility Model for 〈110〉 Stressed Silicon Including Strain-Dependent Mass. IEEE Transactions on Nanotechnology, 6(1), 97–100. https://doi.org/10.1109/tnano.2006.888533 ( reposiTUm)
Grasser, T., & Selberherr, S. (2007). Editorial. Microelectronics Reliability, 47(6), 839–840. https://doi.org/10.1016/j.microrel.2006.10.005 ( reposiTUm)
Spevak, M., & Grasser, T. (2007). Discretization of Macroscopic Transport Equations on Non-Cartesian Coordinate Systems. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 26(8), 1408–1416. http://hdl.handle.net/20.500.12708/168480 ( reposiTUm)
Wagner, M., Span, G., Holzer, S., & Grasser, T. (2007). Thermoelectric Power Generation Using Large-Area Si/SiGe pn-Junctions with Varying Ge Content. Semiconductor Science and Technology, 22, 173–176. http://hdl.handle.net/20.500.12708/168424 ( reposiTUm)
Triebl, O., & Grasser, T. (2007). Vector Discretization Schemes in Technology CAD Environments. Romanian Journal of Information Science and Technology, 10(2), 167–176. http://hdl.handle.net/20.500.12708/168515 ( reposiTUm)
Grasser, T., & Selberherr, S. (2007). Modeling of Negative Bias Temperature Instability. Journal of Telecommunications and Information Technology, 7(2), 92–102. http://hdl.handle.net/20.500.12708/168523 ( reposiTUm)
Span, G., Wagner, M., Grasser, T., & Holmgren, L. (2007). Miniaturized TEG with Thermal Generation of Free Carriers. Physica Status Solidi (RRL) - Rapid Research Letters, 1(6), 241–243. https://doi.org/10.1002/pssr.200701171 ( reposiTUm)
Karner, M., Gehring, A., Wagner, M., Entner, R., Holzer, S., Goes, W., Vasicek, M., Grasser, T., Kosina, H., & Selberherr, S. (2007). VSP - A Gate Stack Analyzer. Microelectronics Reliability, 47(4–5), 704–708. https://doi.org/10.1016/j.microrel.2007.01.059 ( reposiTUm)
Holzer, S., Sheikholeslami, A., Karner, M., Grasser, T., & Selberherr, S. (2007). Comparison of Deposition Models for a TEOS LPCVD Process. Microelectronics Reliability, 47(4–5), 623–625. https://doi.org/10.1016/j.microrel.2007.01.058 ( reposiTUm)
Karner, M., Gehring, A., Holzer, S., Pourfath, M., Wagner, M., Goes, W., Vasicek, M., Baumgartner, O., Kernstock, C., Schnass, K., Zeiler, G., Grasser, T., Kosina, H., & Selberherr, S. (2007). A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications. Journal of Computational Electronics, 6(1–3), 179–182. https://doi.org/10.1007/s10825-006-0077-7 ( reposiTUm)
Cervenka, J., Wessner, W., Al-Ani, E., Grasser, T., & Selberherr, S. (2006). Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 25(10), 2118–2128. https://doi.org/10.1109/tcad.2006.876514 ( reposiTUm)
Dhar, S., Kosina, H., Karlowatz, G., Ungersboeck, S. E., Grasser, T., & Selberherr, S. (2006). High-Field Electron Mobility Model for Strained-Silicon Devices. IEEE Transactions on Electron Devices, 53(12), 3054–3062. https://doi.org/10.1109/ted.2006.885639 ( reposiTUm)
Sverdlov, V., Grasser, T., Kosina, H., & Selberherr, S. (2006). Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices. Journal of Computational Electronics, 5(4), 447–450. https://doi.org/10.1007/s10825-006-0041-6 ( reposiTUm)
Kim, S. C., Bahng, W., Kim, N. K., Kim, E. D., Ayalew, T., Grasser, T., & Selberherr, S. (2005). Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication. Materials Science Forum, 483–485, 793–796. https://doi.org/10.4028/www.scientific.net/msf.483-485.793 ( reposiTUm)
Ayalew, T., Grasser, T., Kosina, H., & Selberherr, S. (2005). Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices. Materials Science Forum, 483–485, 845–848. https://doi.org/10.4028/www.scientific.net/msf.483-485.845 ( reposiTUm)
Grasser, T. (2005). Non-Parabolic Macroscopic Transport Models for Semiconductor Device Simulation. Physica A: Statistical Mechanics and Its Applications, 349, 221–258. http://hdl.handle.net/20.500.12708/171459 ( reposiTUm)
Ayalew, T., Kim, S. C., Grasser, T., & Selberherr, S. (2005). Numerical Analysis of SiC Merged PiN Schottky Diodes. Materials Science Forum, 483–485, 949–952. https://doi.org/10.4028/www.scientific.net/msf.483-485.949 ( reposiTUm)
Jungemann, C., Grasser, T., Neinhüs, B., & Meinerzhagen, B. (2005). Failure of Moments-Based Transport Models in Nanoscale Devices Near Equilibrium. IEEE Transactions on Electron Devices, 52(11), 2404–2408. http://hdl.handle.net/20.500.12708/171538 ( reposiTUm)
Grasser, T., Kosik, R., Jungemann, C., Kosina, H., & Selberherr, S. (2005). Nonparabolic Macroscopic Transport Models for Device Simulation Based on Bulk Monte Carlo Data. Journal of Applied Physics, 97(9), 093710. https://doi.org/10.1063/1.1883311 ( reposiTUm)
Wagner, S., Grasser, T., Fischer, C., & Selberherr, S. (2005). An Advanced Equation Assembly Module. Engineering with Computers, 21(2), 151–163. https://doi.org/10.1007/s00366-005-0319-5 ( reposiTUm)
Grasser, T., Kosik, R., Jungemann, C., Meinerzhagen, B., Kosina, H., & Selberherr, S. (2004). A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Semiconductor Devices. Journal of Computational Electronics, 3(3–4), 183–187. https://doi.org/10.1007/s10825-004-7041-1 ( reposiTUm)

Beiträge in Tagungsbänden

Waltl, M., Stampfer, B., & Grasser, T. (2024). Advanced Extraction of Trap Parameters from Single-Defect Measurements. In 2023 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–5). https://doi.org/10.1109/IIRW59383.2023.10477640 ( reposiTUm)
Kaczer, B., Degraeve, R., Franco, J., Grasser, T., Roussel, P., Bury, E., Weckx, P., Chasin, A., Tyaginov, S., Vandemaele, M., Grill, A., O’Sullivan, B., Diaz-Fortuny, J., Saraza-Canflanca, P., Waltl, M., Rinaudo, P., Zhao, Y., Kao, E., Asanovski, R., … Linten, D. (2024). Gate oxide reliability: upcoming trends, challenges, and opportunities. In 2024 IEEE Silicon Nanoelectronics Workshop (SNW) (pp. 3–4). https://doi.org/10.1109/SNW63608.2024.10639245 ( reposiTUm)
Grasser, T., Feil, M., Waschneck, K., Reisinger, H., Berens, J., Waldhör, D., Vasilev, A., Waltl, M., Aichinger, T., Bockstedte, M., Gustin, W., & Pobegen, G. (2024). A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. In 2024 IEEE International Reliability Physics Symposium (IRPS) (pp. 3B.1-1-3B.1-7). https://doi.org/10.1109/IRPS48228.2024.10529465 ( reposiTUm)
Loesener, M., Zinsler, T., Stampfer, B., Wimmer, F., Ioannidis, E., Monga, U., Pflanzl, W., Minixhofer, R., Grasser, T., & Waltl, M. (2024). Evaluation of the Robustness of the Defect-Centric Model for Defect Parameter Extraction from RTN Analysis. In M. Waltl, F. F. Huemer, & M. Hofbauer (Eds.), 2024 Austrochip Workshop on Microelectronics (Austrochip). IEEE. https://doi.org/10.1109/Austrochip62761.2024.10716231 ( reposiTUm)
Stephanie, M. V., Pham, L., Schindler, A., Waltl, M., Grasser, T., & Schrenk, B. (2024). Neural Network with Optical Frequency-Coded ReLU. In Optical Fiber Communication Conference (OFC) 2024. 2024 Optical Fiber Communications Conference and Exhibition (OFC), United States of America (the). http://hdl.handle.net/20.500.12708/212518 ( reposiTUm)
Knobloch, T., Selberherr, S., & Grasser, T. (2023). High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI Circuits. In ECS Meeting Abstracts (pp. 1864–1864). ECS Transactions. https://doi.org/10.1149/MA2023-01331864mtgabs ( reposiTUm)
Knobloch, T., & Grasser, T. (2023). Gate Stack Design for Field-Effect Transistors Based on Two-Dimensional Materials. In ECS Meeting Abstracts (pp. 1319–1319). ECS Transactions. https://doi.org/10.1149/MA2023-01131319mtgabs ( reposiTUm)
Wilhelmer, C., Waldhör, D., Milardovich, D., Cvitkovich, L., Waltl, M., & Grasser, T. (2023). Intrinsic Electron Trapping in Amorphous Silicon Nitride (a-Si3N4:H). In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 149–152). IEEE. https://doi.org/10.23919/SISPAD57422.2023.10319493 ( reposiTUm)
Wilhelmer, C., Waldhör, D., Cvitkovich, L., Waltl, M., & Grasser, T. (2023). Ab initio investigations of electron and hole trapping processes of H induced defects in amorphous SiO₂. In The 14th International Conference on SiO₂, Dielectrics and Related Devices : Book of Abstracts (pp. 18–19). ( reposiTUm)
Provias, A., Knobloch, T., Kitamura, A., O’Brien, K. P., Dorow, C. J., Waldhör, D., Stampfer, B., Penumatcha, A. V., Lee, S., Ramamurthy, R., Clendenning, S., Waltl, M., Avci, U., & Grasser, T. (2023). Reliability Assessment of Double-Gated Wafer-Scale MoS2 Field Effect Transistors through Hysteresis and Bias Temperature Instability Analyses. In 2023 International Electron Devices Meeting (IEDM) (pp. 1–4). https://doi.org/10.1109/IEDM45741.2023.10413755 ( reposiTUm)
Grill, A., Michl, J., Díaz-Fortuny, J., Beckers, A., Bury, E., Chasin, A., Grasser, T., Waltl, M., Kaczer, B., & De Greve, K. (2023). A Comprehensive Cryogenic CMOS Variability and Reliability Assessment using Transistor Arrays. In 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (pp. 1–3). https://doi.org/10.1109/EDTM55494.2023.10102937 ( reposiTUm)
Bahrami, M., Waldhoer, D., Khakbaz, P., Knobloch, T., Nazir, A., Liu, C., & Grasser, T. (2023). Defects in Strontium Titanate: A First Principles Study. In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 145–148). IEEE. https://doi.org/10.23919/SISPAD57422.2023.10319515 ( reposiTUm)
Bogner, C., Schlunder, C., Waltl, M., Reisinger, H., & Grasser, T. (2023). Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of Variability. In 2023 IEEE International Reliability Physics Symposium (IRPS) (pp. 1–7). IEEE. https://doi.org/10.1109/IRPS48203.2023.10117818 ( reposiTUm)
Stephanie, M. V., Pham, L., Schindler, A., Waltl, M., Grasser, T., & Schrenk, B. (2023). All-Optical ReLU as a Photonic Neural Activation Function. In 2023 IEEE Photonics Society Summer Topicals Meeting Series (SUM) (pp. 1–2). https://doi.org/10.1109/SUM57928.2023.10224396 ( reposiTUm)
Knobloch, T., Illarionov, Y., & Grasser, T. (2022). Enhancing the Stability of 2D Material-Based Transistors via Fermi-Level Tuning. In Abstracts of Graphene Week 2022. Graphene Week 2022, Munich, Germany. http://hdl.handle.net/20.500.12708/153567 ( reposiTUm)
Milardovich, D., Waldhoer, D., Jech, M., El-Sayed, A.-M. B., & Grasser, T. (2022). Building Robust Machine Learning Force Fields by Composite Gaussian Approximation Potentials. In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 61–62). http://hdl.handle.net/20.500.12708/153555 ( reposiTUm)
Jech, M., Grasser, T., & Waltl, M. (2022). The Importance of Secondary Generated Carriers in Modeling of Full Bias Space. In 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). 6th IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Japan. EDTM. https://doi.org/10.1109/edtm53872.2022.9798262 ( reposiTUm)
Wilhelmer, C., Waldhör, D., Jech, M., El-Sayed, A.-M., Cvitkovich, L., Waltl, M., & Grasser, T. (2022). Ab-Initio Study of Multi-State Defects in Amorphous SiO2. In PSI-K 2022: abstracts book (p. 264). http://hdl.handle.net/20.500.12708/153559 ( reposiTUm)
Milardovich, D., Jech, M., Waldhoer, D., El-Sayed, A.-M. B., & Grasser, T. (2022). Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide. In PSI-K 2022 Abstracts Book. Psi-K Conference (Psi-K) 2022, Lausanne, Switzerland. http://hdl.handle.net/20.500.12708/153558 ( reposiTUm)
Knobloch, T., Illarionov, Y. Yu., & Grasser, T. (2022). Finding Suitable Gate Insulators for Reliable 2D FETs. In 2022 IEEE International Reliability Physics Symposium (IRPS). 2022 IEEE International Reliability Physics Symposium (IRPS), Dallas, United States of America (the). https://doi.org/10.1109/irps48227.2022.9764499 ( reposiTUm)
Cvitkovich, L., Waldhör, D., El-Sayed, A.-M., Jech, M., Wilhelmer, C., & Grasser, T. (2022). Ab-Initio Modeling of the Initial Stages of Si(100) Thermal Oxidation. In PSI-K 2022: abstracts book (p. 209). http://hdl.handle.net/20.500.12708/153557 ( reposiTUm)
Tselios, K., Knobloch, T., Michl, J. D., Waldhör, D., Schleich, C., Ioannidis, E., Enichlmair, H., Minixhofer, R., Grasser, T., & Waltl, M. (2022). Impact of Single Defects on NBTI and PBTI Recovery in SiO₂ Transistors. In Proceedings 2022 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–5). https://doi.org/10.1109/IIRW56459.2022.10032748 ( reposiTUm)
Stephanie, M. V., Waltl, M., Grasser, T., & Schrenk, B. (2022). WDM-Conscious Synaptic Receptor Assisted by SOA+EAM. In Optical Fiber Communication Conference (OFC) 2022. 2022 Optical Fiber Communications Conference and Exhibition (OFC), San Diego, California, United States of America (the). https://doi.org/10.1364/ofc.2022.m1g.2 ( reposiTUm)
Stampfer, P., Meinhardt, G., Grasser, T., & Waltl, M. (2022). Simulating and Modeling the Influence of Deep Trench Interface Recombination on Si Photodiodes. In 2022 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–5). https://doi.org/10.1109/IIRW56459.2022.10032736 ( reposiTUm)
Grill, A., John, V., Michl, J., Beckers, A., Bury, E., Tyaginov, S., Parvais, B., Chasin, A. V., Grasser, T., Waltl, M., Kaczer, B., & Govoreanu, B. (2022). Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors. In 2022 IEEE International Reliability Physics Symposium (IRPS) (pp. 1–6). IEEE. https://doi.org/10.1109/IRPS48227.2022.9764594 ( reposiTUm)
Bogner, C., Grasser, T., Waltl, M., Reisinger, H., & Schlunder, C. (2022). Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays. In 2022 IEEE International Reliability Physics Symposium (IRPS) (pp. 1–8). https://doi.org/10.1109/IRPS48227.2022.9764496 ( reposiTUm)
Wilhelmer, C., Waldhör, D., Jech, M., El-Sayed, A.-M. B., Cvitkovich, L., Waltl, M., & Grasser, T. (2022). Metastability of Negatively Charged Hydroxyl-E’ Centers and their Potential Role in Positive Bias Temperature Instabilities. In ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC) (pp. 376–379). https://doi.org/10.1109/ESSDERC55479.2022.9947111 ( reposiTUm)
Stephanie, M. V., Honz, F., Vokic, N., Boxleitner, W., Waltl, M., Grasser, T., & Schrenk, B. (2022). Reception of Frequency-Coded Synapses through Fabry-Perot SOA- REAM Integrating Weighting and Detection Functions. In 2022 European Conference on Optical Communication (ECOC) (pp. 1–4). http://hdl.handle.net/20.500.12708/213280 ( reposiTUm)
Cvitkovich, L., Jech, M., Waldhör, D., El-Sayed, A.-M., Wilhelmer, C., & Grasser, T. (2021). Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface. In ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC). ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), Grenoble, France. https://doi.org/10.1109/essderc53440.2021.9631790 ( reposiTUm)
Grasser, T., O’Sullivan, B., Kaczer, B., Franco, J., Stampfer, B., & Waltl, M. (2021). CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States. In 2021 IEEE International Reliability Physics Symposium (IRPS). 2021 IEEE International Reliability Physics Symposium (IRPS), Monterey, United States of America (the). https://doi.org/10.1109/irps46558.2021.9405184 ( reposiTUm)
Ribeiro, F., Rupp, K., & Grasser, T. (2021). Parallel Solver Study for Solving the Boltzmann Transport Equation using Spherical Harmonics Expansions on Supercomputers. In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2021) (pp. 97–98). http://hdl.handle.net/20.500.12708/77399 ( reposiTUm)
Franco, J., Marneffe, J.-F., Vandooren, A., Kimura, Y., Nyns, L., Wu, Z., El-Sayed, A.-M., Jech, M., Waldhör, D., Claes, D., Arimura, H., Ragnarsson, L. A., Afanas´Ev, V., Horiguchi, N., Linten, D., Grasser, T., & Kaczer, B. (2021). Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking. In 2020 IEEE International Electron Devices Meeting (IEDM). 2020 IEEE International Electron Devices Meeting (IEDM), San Francisco, United States of America (the). https://doi.org/10.1109/iedm13553.2020.9372054 ( reposiTUm)
Wilhelmer, C., Jech, M., Waldhoer, D., El-Sayed, A.-M. B., Cvitkovich, L., & Grasser, T. (2021). Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network. In ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC). ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), Grenoble, France. https://doi.org/10.1109/essderc53440.2021.9631833 ( reposiTUm)
Wen, C., Illarionov, Y., Frammelsberger, W., Knobloch, T., Grasser, T., & Lanza, M. (2021). Outstanding Dielectric Properties of Ultra-thin CaF2 Dielectric Films. In Bulletin of the American Physical Society. APS March Meeting, Los Angeles/USA, Austria. http://hdl.handle.net/20.500.12708/77691 ( reposiTUm)
Milardovich, D., Jech, M., Waldhoer, D., El-Sayed, A.-M. B., & Grasser, T. (2021). Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide. In ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC). ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), Grenoble, France. https://doi.org/10.1109/essderc53440.2021.9631837 ( reposiTUm)
Franco, J., Marneffe, J.-F., Vandooren, A., Arimura, H., Ragnarsson, L. A., Claes, D., Litta, E. D., Horiguchi, N., Croes, K., Linten, D., Grasser, T., & Kaczer, B. (2021). Low Temperature Atomic Hydrogen Treatment for Superior NBTI Reliability -- Demonstration and Modeling across SiO2 IL Thicknesses from 1.8 to 0.6 nm for I/O and Core Logic. In 2021 Symposium on VLSI Technology (VLSIT) (pp. 1–2). http://hdl.handle.net/20.500.12708/77692 ( reposiTUm)
Franco, J., Arimura, H., de Marneffe, J.-F., Vandooren, A., Ragnarsson, L.-A., Wu, Z., Claes, D., Litta, E. D., Horiguchi, N., Croes, K., Linten, D., Grasser, T., & Kaczer, B. (2021). Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paper. In 2021 International Conference on IC Design and Technology (ICICDT). 2021 International Conference on IC Design and Technology (ICICDT), Dresde, Germany. https://doi.org/10.1109/icicdt51558.2021.9626482 ( reposiTUm)
Michl, J., Grill, A., Stampfer, B., Waldhoer, D., Schleich, C., Knobloch, T., Ioannidis, E., Enichlmair, H., Minixhofer, R., Kaczer, B., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., & Waltl, M. (2021). Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS. In Proceedings of the IEEE International Electron Devices Meeting (IEDM) (pp. 31.3.1-31.3.4). https://doi.org/10.1109/IEDM19574.2021.9720501 ( reposiTUm)
Illarionov, Y., Banshchikov, A. G., Knobloch, T., Polyushkin, D. K., Wachter, S., Fedorov, V. V., Suturin, S. M., Stöger-Pollach, M., Vexler, M. I., Sokolov, N. S., & Grasser, T. (2020). Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics. In 2020 Device Research Conference (DRC). Device Research Conference (DRC), Santa-Barbara, United States of America (the). https://doi.org/10.1109/drc50226.2020.9135160 ( reposiTUm)
Illarionov, Y. Y., Knobloch, T., & Grasser, T. (2020). Where Are the Best Insulators for 2D Field-Effect Transistors? In ECS Meeting Abstracts (pp. 844–844). https://doi.org/10.1149/ma2020-0110844mtgabs ( reposiTUm)
Tyaginov, S., Grill, A., Vandemaele, M., Grasser, T., Hellings, G., Makarov, A., Jech, M., Linten, D., & Kaczer, B. (2020). A Compact Physics Analytical Model for Hot-Carrier Degradation. In 2020 IEEE International Reliability Physics Symposium (IRPS). IEEE International Reliability Physics Symposium (IRPS), Waikoloa, United States of America (the). https://doi.org/10.1109/irps45951.2020.9128327 ( reposiTUm)
Milardovich, D., Jech, M., Waldhoer, D., Waltl, M., & Grasser, T. (2020). Machine Learning Prediction of Defect Formation Energies in a-SiO₂. In 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. IEEE. https://doi.org/10.23919/sispad49475.2020.9241609 ( reposiTUm)
Grasser, T., Kaczer, B., O’Sullivan, B., Rzepa, G., Stampfer, B., & Waltl, M. (2020). The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release. In 2020 IEEE International Reliability Physics Symposium (IRPS). IEEE International Reliability Physics Symposium (IRPS), Waikoloa, United States of America (the). https://doi.org/10.1109/irps45951.2020.9129198 ( reposiTUm)
Knobloch, T., Michl, J., Waldhör, D., Illarionov, Y., Stampfer, B., Grill, A., Zhou, R., Wu, P., Waltl, M., Appenzeller, J., & Grasser, T. (2020). Analysis of Single Electron Traps in Nano-scaled MoS2 FETs at Cryogenic Temperatures. In Proceedings of the Device Research Conference (DRC) (pp. 52–53). http://hdl.handle.net/20.500.12708/77274 ( reposiTUm)
Knobloch, T., Illarionov, Y., Uzlu, B., Waltl, M., Neumaier, D., Lemme, M., & Grasser, T. (2020). The Impact of the Graphene Work Function on the Stability of Flexible GFETs. In Proceedings of the Electronic Materials Conference (EMC). Electronic Materials Conference (EMC), Columbus (virtual), United States of America (the). http://hdl.handle.net/20.500.12708/77275 ( reposiTUm)
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Toledano-Luque, M., Kaczer, B., Roussel, Ph. J., Grasser, T., & Groeseneken, G. (2010). Temperature Dependence of the Emission and Capture Times of SiON Individual Traps after Positive Bias Temperature Stress. In Book of Abstracts (p. 28). http://hdl.handle.net/20.500.12708/71604 ( reposiTUm)
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Southwick III, R. G., Knowlton, B., Kaczer, B., & Grasser, T. (2009). On the Thermal Activation of Negative Bias Temperature Instability. In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 36–41). http://hdl.handle.net/20.500.12708/71314 ( reposiTUm)
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Bindu, B., Gös, W., Kaczer, B., & Grasser, T. (2009). Analytical Solution of the Switching Trap Model for Negative Bias Temperature Stress. In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 93–96). http://hdl.handle.net/20.500.12708/71316 ( reposiTUm)
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Kaczer, B., Grasser, T., Roussel, Ph. J., Martin-Martinez, J., O´Connor, R., O´Sullivan, B. J., & Groeseneken, G. (2008). Ubiquitous Relaxation in BTI Stressing-New Evaluation and Insights. In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 20–27). http://hdl.handle.net/20.500.12708/70646 ( reposiTUm)
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Gös, W., Karner, M., Sverdlov, V., & Grasser, T. (2008). A Rigorous Model for Trapping and Detrapping in Thin Gate Dielectrics. In Proceedings 15#^{th} International Symposium on the Physical and Failure Analysis of Integrated Circuits (pp. 249–254). http://hdl.handle.net/20.500.12708/70254 ( reposiTUm)
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Gös, W., & Grasser, T. (2007). First-Principles Investigation on Oxide Trapping. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 157–160). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_38 ( reposiTUm)
Vasicek, M., Karner, M., Ungersboeck, E., Wagner, M., Kosina, H., & Grasser, T. (2007). Modeling of Macroscopic Transport Parameters in Inversion Layers. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 201–204). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_48 ( reposiTUm)
Meller, G., Li, L., Holzer, S., & Kosina, H. (2007). Dynamic Monte Carlo Simulation of an Amorphous Organic Device. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 373–376). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_90 ( reposiTUm)
Ceric, H., Nentchev, A., Langer, E., & Selberherr, S. (2007). Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 37–40). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_9 ( reposiTUm)
Vitanov, S., Palankovski, V., Murad, S., Rödle, T., Quay, R., & Selberherr, S. (2007). Hydrodynamic Modeling of AlGaN/GaN HEMTs. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 273–276). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_65 ( reposiTUm)
Nentchev, A., & Selberherr, S. (2007). On the Magnetic Field Extraction for On-Chip Inductance Calculation. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 349–352). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_84 ( reposiTUm)
Sverdlov, V., Kosina, H., Grasser, T., & Selberherr, S. (2007). Self-Consistent Wigner Monte Carlo Simulations of Current in Emerging Nanodevices: Role of Tunneling and Scattering. In AIP Conference Proceedings. American Institute of Physics. https://doi.org/10.1063/1.2730425 ( reposiTUm)
Sverdlov, V. A., Karlowatz, G., Ungersboeck, E., & Kosina, H. (2007). Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparabolicity Parameter. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 329–332). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_79 ( reposiTUm)
Baumgartner, O., Karner, M., Holzer, S., Pourfath, M., Grasser, T., & Kosina, H. (2007). Adaptive Energy Integration of Non-Equilibrium Green’s Functions. In NSTI Nanotech Proceedings (pp. 145–148). http://hdl.handle.net/20.500.12708/69624 ( reposiTUm)
Triebl, O., & Grasser, T. (2007). Investigation of Vector Discretization Schemes for Box Volume Methods. In NSTI Nanotech Proceedings (pp. 61–64). http://hdl.handle.net/20.500.12708/69635 ( reposiTUm)
Ertl, O., Heitzinger, C., & Selberherr, S. (2007). Efficient Coupling of Monte Carlo and Level Set Methods for Topography Simulation. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 417–420). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_101 ( reposiTUm)
Pourfath, M., & Kosina, H. (2007). The Effect of Optical Phonon Scattering on the On-Current and Gate Delay Time of CNT-FETs. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 309–312). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_74 ( reposiTUm)
Cervenka, J., Ceric, H., Ertl, O., & Selberherr, S. (2007). Three-Dimensional Sacrificial Etching. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 433–436). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_105 ( reposiTUm)
Gös, W., & Grasser, T. (2007). Charging and Discharging of Oxide Defects in Reliability Issues. In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 27–32). http://hdl.handle.net/20.500.12708/70134 ( reposiTUm)
Grasser, T., Wagner, P.-J., Hehenberger, P. P., Gös, W., & Kaczer, B. (2007). A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability. In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 6–11). http://hdl.handle.net/20.500.12708/70131 ( reposiTUm)
Kosina, H., Triebl, O., & Grasser, T. (2007). Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 317–320). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_76 ( reposiTUm)
Grasser, T., Kaczer, B., Hehenberger, P. P., Gös, W., Connor, R., Reisinger, H., Gustin, W., & Schlünder, C. (2007). Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability. In 2007 IEEE International Electron Devices Meeting. IEEE International Electron Devices Meeting (IEDM), San Francisco, United States of America (the). https://doi.org/10.1109/iedm.2007.4419069 ( reposiTUm)
Li, L., Meller, G., & Kosina, H. (2007). Charge Injection Model in Organic Light-Emitting Diodes Based on a Master Equation. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 377–380). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_91 ( reposiTUm)
Vasicek, M., Cervenka, J., Karner, M., Wagner, M., & Grasser, T. (2007). Parameter Modeling for Higher-Order Transport Models in UTB SOI MOSFETs. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 96–97). http://hdl.handle.net/20.500.12708/69802 ( reposiTUm)
Grasser, T., & Kaczer, B. (2007). Negative Bias Temperature Instability: Recoverable versus Permanent Degradation. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 127–130). http://hdl.handle.net/20.500.12708/69753 ( reposiTUm)
Grabinski, W., Grasser, T., Gildenblat, G., Smit, G.-J., Bucher, M., Aarts, A., Tajic, A., Chauhan, Y. S., Napieralski, A., Fjeldly, T. A., Iniguez, B., Iannaccone, G., Kayal, M., Posch, W., Wachutka, G., Prégaldiny, F., Lallement, C., & Lemaitre, L. (2007). MOS-AK: Open Compact Modeling Forum. In The 4th International Workshop on Compact Modeling (pp. 1–11). http://hdl.handle.net/20.500.12708/70052 ( reposiTUm)
Span, G., Wagner, M., Holzer, S., & Grasser, T. (2006). Thermoelectric Power Conversion using Generation of Electron-Hole Pairs in Large Area p-n Junctions. In International Conference on Thermoelectrics (pp. 23–28). http://hdl.handle.net/20.500.12708/69625 ( reposiTUm)
Heinzl, R., Spevak, M., Schwaha, P., & Grasser, T. (2006). A High Performance Generic Scientific Simulation Environment. In Proceedings of the PARA Conference (p. 61). http://hdl.handle.net/20.500.12708/69100 ( reposiTUm)
Schwaha, P., Heinzl, R., Spevak, M., & Grasser, T. (2006). Advanced Equation Processing for TCAD. In Proceedings of the PARA Conference (p. 64). http://hdl.handle.net/20.500.12708/69101 ( reposiTUm)
Karner, M., Gehring, A., Wagner, M., Entner, R., Holzer, S., Gös, W., Vasicek, M., Grasser, T., Kosina, H., & Selberherr, S. (2006). VSP-A Gate Stack Analyzer. In WODIM 2006 14#^{th} Workshop on Dielectrics in Microelectronics Workshop Program and Abstracts (pp. 101–102). http://hdl.handle.net/20.500.12708/69106 ( reposiTUm)
Entner, R., Grasser, T., Enichlmair, H., & Minixhofer, R. (2006). Influence of Interface and Oxide Traps on Negative Bias Temperature Instability. In Abstracts IEEE 2006 Silicon Nanoelectronics Workshop (pp. 163–164). http://hdl.handle.net/20.500.12708/69097 ( reposiTUm)
Heinzl, R., Schwaha, P., Spevak, M., & Grasser, T. (2006). Concepts for High Performance Generic Scientific Computing. In 5#^{th} Mathmod Vienna Proceedings (pp. 4-1-4–9). http://hdl.handle.net/20.500.12708/68997 ( reposiTUm)
Kosina, H., Sverdlov, V., & Grasser, T. (2006). Wigner Monte Carlo Simulation: Particle Annihilation and Device Applications. In 2006 International Conference on Simulation of Semiconductor Processes and Devices. 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, California, United States of America (the). IEEE. https://doi.org/10.1109/sispad.2006.282908 ( reposiTUm)
Schwaha, P., Heinzl, R., Spevak, M., & Grasser, T. (2006). A Generic Approach to Scientific Computing. In ICCAM 2006 Abstracts of Talks (p. 137). http://hdl.handle.net/20.500.12708/69235 ( reposiTUm)
Holzer, S., Wagner, M., Friembichler, L., Langer, E., Grasser, T., & Selberherr, S. (2006). A Multi-Purpose Optimization Framework for TCAD Applications. In ICCAM 2006 Abstracts of Talks (p. 76). http://hdl.handle.net/20.500.12708/69234 ( reposiTUm)
Spevak, M., Heinzl, R., Schwaha, P., Grasser, T., & Selberherr, S. (2006). A Generic Discretization Library. In OOPSLA Proceedings (pp. 95–100). http://hdl.handle.net/20.500.12708/69288 ( reposiTUm)
Triebl, O., & Grasser, T. (2006). Vector Discretization Schemes Based on Unstructured Neighbourhood Information. In CAS 2006 Proceedings Vol. 2 (pp. 337–340). http://hdl.handle.net/20.500.12708/69256 ( reposiTUm)
Heinzl, R., Spevak, M., Schwaha, P., & Grasser, T. (2006). Multidimensional and Multitopological TCAD with a Generic Scientific Simulation Environment. In Proceedings International Caribbean Conference on Devices, Circuits and Systems (pp. 173–176). http://hdl.handle.net/20.500.12708/69019 ( reposiTUm)
Grasser, T., & Selberherr, S. (2006). Modeling of Negative Bias Temperature Instability. In Abstracts 7#^{th} Symposium Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI ERA (pp. 1–2). http://hdl.handle.net/20.500.12708/69092 ( reposiTUm)
Dhar, S., Ungersböck, S. E., Kosina, H., Grasser, T., & Selberherr, S. (2006). Electron Mobility Model for #lt110#gt Stressed Si Including Strain-Dependent Mass. In Abstracts IEEE 2006 Silicon Nanoelectronics Workshop (pp. 153–154). http://hdl.handle.net/20.500.12708/69095 ( reposiTUm)
Entner, R., Grasser, T., Enichlmair, H., & Minixhofer, R. (2006). Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures. In WODIM 2006 14#^{th} Workshop on Dielectrics in Microelectronics Workshop Programme and Abstracts (pp. 96–97). http://hdl.handle.net/20.500.12708/69107 ( reposiTUm)
Dhar, S., Kosina, H., Karlowatz, G., Ungersböck, S. E., Grasser, T., & Selberherr, S. (2006). A Tensorial High-Field Electron Mobility Model for Strained Silicon. In 2006 International SiGe Technology and Device Meeting Conference Digest (pp. 72–73). http://hdl.handle.net/20.500.12708/69074 ( reposiTUm)
Wagner, M., Span, G., & Grasser, T. (2006). Thermoelectric Power Generation Using Large Area Si/SiGe pn-Junctions With Varying Ge-Content. In 2006 International SiGe Technology and Device Meeting Conference Digest (pp. 216–217). http://hdl.handle.net/20.500.12708/69073 ( reposiTUm)
Heinzl, R., Spevak, M., Schwaha, P., & Grasser, T. (2006). High Performance Process and Device Simulation with a Generic Environment. In Proceedings of the 14#^{th} Iranian Conference on Electrical Engineering ICEE 2006 (p. 4). http://hdl.handle.net/20.500.12708/69054 ( reposiTUm)
Spevak, M., Heinzl, R., Schwaha, P., & Grasser, K.-T. (2006). Process and Device Simulation with a Generic Scientific Simulation Environment. In 2006 25th International Conference on Microelectronics. International Conference on Microelectronics (MIEL), Beograd, Non-EU. https://doi.org/10.1109/icmel.2006.1650996 ( reposiTUm)
Karner, M., Wagner, M., Grasser, T., & Kosina, H. (2006). A Physically Based Quantum Correction Model for DG MOSFETs. In San Francisco 2006 MRS Meeting Abstracts (pp. 104–105). http://hdl.handle.net/20.500.12708/69071 ( reposiTUm)
Entner, R., Grasser, T., Enichlmair, H., & Minixhofer, R. (2006). Investigation of NBTI Recovery During Measurement. In San Francisco 2006 MRS Meeting Abstracts (pp. 110–111). http://hdl.handle.net/20.500.12708/69072 ( reposiTUm)
Schwaha, P., Heinzl, R., Brezna, W., Smoliner, J., Enichlmair, H., Minixhofer, R., & Grasser, T. (2006). Leakage Current Analysis of a Real World Silicon-Silicon Dioxide Capacitance. In Proceedings International Caribbean Conference on Devices, Circuits and Systems (pp. 365–370). http://hdl.handle.net/20.500.12708/69025 ( reposiTUm)
Spevak, M., Heinzl, R., Schwaha, P., & Grasser, T. (2006). Simulation of Microelectronic Structures Using A Posteriori Error Estimation and Mesh Optimization. In 5#^{th} Mathmod Vienna Proceedings (pp. 5-1-5–8). http://hdl.handle.net/20.500.12708/69059 ( reposiTUm)
Spevak, M., Heinzl, R., Schwaha, P., & Grasser, T. (2006). A Computational Framework for Topological Operations. In Proceedings of the PARA Conference (p. 57). http://hdl.handle.net/20.500.12708/69099 ( reposiTUm)
Heinzl, R., Schwaha, P., Spevak, M., & Grasser, T. (2006). Performance Aspects of a DSEL for Scientific Computing with C++. In Proceedings of the POOSC Conference (pp. 37–41). http://hdl.handle.net/20.500.12708/69230 ( reposiTUm)
Spevak, M., Heinzl, R., Schwaha, P., & Grasser, T. (2006). Automatic Linearization using Functional Programming for Scientific Computing. In ICCAM 2006 Abstracts of Talks (p. 147). http://hdl.handle.net/20.500.12708/69236 ( reposiTUm)
Sheikholeslami, A., Heinzl, R., Holzer, S., Heitzinger, C., Spevak, M., Leicht, M., Häberlen, O., Fugger, J., Badrieh, F., Parhami, F., Puchner, H., Grasser, T., & Selberherr, S. (2006). Applications of Two- and Three-Dimensional General Topography Simulator in Semiconductor Manufacturing Processes. In Proceedings of the 14#^{th} Iranian Conference on Electrical Engineering ICEE 2006 (p. 4). http://hdl.handle.net/20.500.12708/69060 ( reposiTUm)
Holzer, S., Sheikholeslami, A., Karner, M., & Grasser, T. (2006). Comparison of Deposition Models for TEOS CVD Process. In WODIM 2006 14#^{th} Workshop on Dielectrics in Microelectronics Workshop Programme and Abstracts (pp. 158–159). http://hdl.handle.net/20.500.12708/69105 ( reposiTUm)
Holzer, S., Wagner, M., Sheikholeslami, A., Karner, M., Span, G., Grasser, T., & Selberherr, S. (2006). An Extendable Multi-Purpose Simulation and Optimization Framework for Thermal Problems in TCAD Applications. In Collection of Papers Presented at the 12#^{th} International Workshop on Thermal Investigation of ICs and Systems (pp. 239–244). http://hdl.handle.net/20.500.12708/69237 ( reposiTUm)
Dhar, S., Ungersboeck, E., Kosina, H., Grasser, T., & Selberherr, S. (2006). Analytical Modeling of Electron Mobility in Strained Germanium. In 2006 International Conference on Simulation of Semiconductor Processes and Devices. 2006 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, United States of America (the). IEEE. https://doi.org/10.1109/sispad.2006.282833 ( reposiTUm)
Grasser, T., Gös, W., & Kaczer, B. (2006). Modeling of Dispersive Transport in the Context of Negative Bias Temperature Instability. In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 5–10). http://hdl.handle.net/20.500.12708/69673 ( reposiTUm)
Wagner, M., Karner, M., Grasser, T., & Kosina, H. (2006). Quantum Correction for DG MOSFETs. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 87–88). http://hdl.handle.net/20.500.12708/69064 ( reposiTUm)
Heinzl, R., Spevak, M., Schwaha, P., Grasser, T., & Selberherr, S. (2006). Performance Analysis for High-Precision Interconnect Simulation. In The 2006 European Simulation and Modelling Conference (pp. 113–116). http://hdl.handle.net/20.500.12708/69280 ( reposiTUm)
Sverdlov, V., & Grasser, T. (2006). Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 29–30). http://hdl.handle.net/20.500.12708/69063 ( reposiTUm)
Wagner, M., Span, G., Holzer, S., & Grasser, T. (2006). Design Optimization of Large Area Si/SiGe Thermoelectric Generators. In 2006 International Conference on Simulation of Semiconductor Processes and Devices. 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, California, United States of America (the). IEEE. https://doi.org/10.1109/sispad.2006.282918 ( reposiTUm)
Heinzl, R., Spevak, M., Schwaha, P., & Grasser, T. (2006). A Generic Scientific Simulation Environment for Multidimensional Simulation in the Area of TCAD. In NSTI Nanotech Proceedings (pp. 526–529). http://hdl.handle.net/20.500.12708/69058 ( reposiTUm)
Holzer, S., Hollauer, C., Ceric, H., Karner, M., Grasser, T., Langer, E., & Selberherr, S. (2006). Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress. In Proceedings 13#^{th} International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (pp. 154–157). http://hdl.handle.net/20.500.12708/69129 ( reposiTUm)
Wagner, M., Span, G., Holzer, S., Triebl, O., & Grasser, T. (2006). Power Output Improvement of SiGe Thermoelectric Generators. In Meeting Abstracts 2006 Joint International Meeting (p. 1). http://hdl.handle.net/20.500.12708/69292 ( reposiTUm)
Holzer, S., Hollauer, C., Ceric, H., Wagner, S., Entner, R., Langer, E., Grasser, T., & Selberherr, S. (2005). Three-Dimensional Transient Electro-Thermal Interconnect Simulation for Stress and Electromigration Analysis. In NSTI Nanotech Technical Proceedings (pp. 620–623). http://hdl.handle.net/20.500.12708/68483 ( reposiTUm)
Entner, R., Gehring, A., Kosina, H., Grasser, T., & Selberherr, S. (2005). Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices. In NSTI Nanotech Technical Proceedings (pp. 45–48). http://hdl.handle.net/20.500.12708/68484 ( reposiTUm)
Jungemann, C., Grasser, T., Neinhüs, B., & Meinerzhagen, B. (2005). Failure of Macroscopic Transport Models in Nanoscale Devices near Equilibrium. In NSTI Nanotech Technical Proceedings (pp. 25–28). http://hdl.handle.net/20.500.12708/68485 ( reposiTUm)
Wagner, M., Karner, M., & Grasser, T. (2005). Quantum Correction Models for Modern Semiconductor Devices. In Proceedings of the XIII International Workshop on Semiconductor Devices (pp. 458–461). http://hdl.handle.net/20.500.12708/68921 ( reposiTUm)
Ceric, H., Deshpande, V., Hollauer, C., Holzer, S., Grasser, T., & Selberherr, S. (2005). Comprehensive Analysis of Vacancy Dynamics Due to Electromigration. In Proceedings of the 12#^{th} International Symposium on the Physical & Failure Analysis of Integrated Circuits (pp. 100–103). http://hdl.handle.net/20.500.12708/68912 ( reposiTUm)
Hollauer, C., Holzer, S., Ceric, H., Wagner, S., Grasser, T., & Selberherr, S. (2005). Investigation of Thermo-Mechanical Stress in Modern Interconnect Layouts. In Proceedings of The Sixth International Congress on Thermal Stresses (pp. 637–640). Schriftenreihe der Technischen Universität Wien. http://hdl.handle.net/20.500.12708/68513 ( reposiTUm)
Heinzl, R., Spevak, M., Schwaha, P., & Grasser, T. (2005). A Novel Technique for Coupling Three Dimensional Mesh Adaption With An A Posteriori Error Estimator. In 2005 PhD Research in Microelectronics and Electronics (pp. 175–178). http://hdl.handle.net/20.500.12708/68519 ( reposiTUm)
Span, G., Wagner, M., & Grasser, T. (2005). Thermoelectric Power Generation Using Large Area pn-Junctions. In The 3#^{rd} European Conference on Thermoelectrics Proceedings ECT2005 (pp. 72–75). http://hdl.handle.net/20.500.12708/68534 ( reposiTUm)
Heinzl, R., & Grasser, T. (2005). Generalized Comprehensive Approach for Robust Three-Dimensional Mesh Generation for TCAD. In 2005 International Conference On Simulation of Semiconductor Processes and Devices. 2005 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. IEEE. https://doi.org/10.1109/sispad.2005.201510 ( reposiTUm)
Entner, R., Gehring, A., Kosina, H., Grasser, T., & Selberherr, S. (2005). Modeling of Tunneling Currents for Highly Degraded CMOS Devices. In 2005 International Conference On Simulation of Semiconductor Processes and Devices. 2005 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. IEEE. https://doi.org/10.1109/sispad.2005.201512 ( reposiTUm)
Schwaha, P., Heinzl, R., Spevak, M., & Grasser, T. (2005). Coupling Three-Dimensional Mesh Adaptation with an A Posteriori Error Estimator. In 2005 International Conference On Simulation of Semiconductor Processes and Devices. 2005 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. IEEE. https://doi.org/10.1109/sispad.2005.201516 ( reposiTUm)
Schwaha, P., Heinzl, R., Brezna, W., Smoliner, J., Enichlmair, H., Minixhofer, R., & Grasser, T. (2005). Fully Three-Dimensional Analysis of Leakage Current in Non-Planar Oxides. In The 2005 European Simulation and Modelling Conference Proceedings (pp. 469–473). http://hdl.handle.net/20.500.12708/68734 ( reposiTUm)
Spevak, M., & Grasser, T. (2005). Discretisation Schemes For Macroscopic Transport Equations on Non-Cartesian Coordinate Systems. In The 2005 European Simulation and Modelling Conference Proceedings (pp. 474–478). http://hdl.handle.net/20.500.12708/68735 ( reposiTUm)
Al-Ani, E., Heinzl, R., Schwaha, P., Grasser, T., & Selberherr, S. (2005). Three-Dimensional State-Of-The-Art Topography Simulation. In The 2005 European Simulation and Modelling Conference Proceedings (pp. 430–432). http://hdl.handle.net/20.500.12708/68733 ( reposiTUm)
Heinzl, R., Schwaha, P., Spevak, M., & Grasser, T. (2005). Adaptive Mesh Generation for TCAD with Guaranteed Error Bounds. In The 2005 European Simulation and Modelling Conference Proceedings (pp. 425–429). http://hdl.handle.net/20.500.12708/68732 ( reposiTUm)
Sheikholeslami, A., Parhami, F., Heinzl, R., Al-Ani, E., Heitzinger, C., Badrieh, F., Puchner, H., Grasser, T., & Selberherr, S. (2005). Applications of Three-Dimensional Topography Simulation in the Design of Interconnect Lines. In 2005 International Conference On Simulation of Semiconductor Processes and Devices. 2005 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. IEEE. https://doi.org/10.1109/sispad.2005.201504 ( reposiTUm)
Sheikholeslami, A., Al-Ani, E., Heinzl, R., Heitzinger, C., Parhami, F., Badrieh, F., Puchner, H., Grasser, T., & Selberherr, S. (2005). Level Set Method Based General Topography Simulator and its Application in Interconnect Processes. In ULIS 2005 6#^{th} International Conference on Ultimate Integration of Silicon (pp. 139–142). http://hdl.handle.net/20.500.12708/68462 ( reposiTUm)
Sheikholeslami, A., Holzer, S., Heitzinger, C., Leicht, M., Häberlen, O., Fugger, J., Grasser, T., & Selberherr, S. (2005). Inverse Modeling of Oxid Deposition Using Measurements of a TEOS CVD Process. In 2005 PhD Research in Microelectronics and Electronics (pp. 279–282). http://hdl.handle.net/20.500.12708/68518 ( reposiTUm)
Holzer, S., Hollauer, C., Ceric, H., Wagner, S., Langer, E., Grasser, T., & Selberherr, S. (2005). Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress. In J. Lopez, F. V. Fernandez, J. M. Lopez-Villegas, & J. M. de la Rosa (Eds.), VLSI Circuits and Systems II (pp. 380–387). SPIE. https://doi.org/10.1117/12.608414 ( reposiTUm)
Sheikholeslami, A., Heitzinger, C., Al-Ani, E., Heinzl, R., Grasser, T., & Selberherr, S. (2004). Three-Dimensional Surface Evolution Using a Level Set Method. In Proceedings of the Iranian Ph.D. Students Seminar on Computer Science, Mathematics and Statistics (ICSMS). Iranian Ph.D. Students Seminar on Computer Science, Mathematics and Statistics (ICSMS), Paris, Austria. http://hdl.handle.net/20.500.12708/68457 ( reposiTUm)
Grasser, T. (2001). Simulation of Semiconductor Devices and Circuits at High Frequencies. In Proceedings of the GMe Forum (pp. 91–96). http://hdl.handle.net/20.500.12708/68623 ( reposiTUm)
Kosina, H., Gritsch, M., Grasser, T., Linton, T., Yu, S., Giles, M., & Selberherr, S. (2001). An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (p. 67). http://hdl.handle.net/20.500.12708/68337 ( reposiTUm)

Beiträge in Büchern

Cervenka, J., Kosik, R., Vasicek, M.-T., Gritsch, M., Selberherr, S., & Grasser, T. (2023). Macroscopic Transport Models for Classical Device Simulation. In M. Rudan, R. Brunetti, & S. Reggiani (Eds.), Springer Handbook of Semiconductor Devices (pp. 1335–1381). Springer. https://doi.org/10.1007/978-3-030-79827-7_37 ( reposiTUm)
Waltl, M., Hernandez, Y., Schleich, C., Waschneck, K. A., Stampfer, B., Reisinger, H., & Grasser, T. (2022). Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models. In J. F. Michaud, L. V. Phung, D. Alquier, & D. Planson (Eds.), Silicon Carbide and Related Materials 2021 (pp. 688–695). Trans Tech Publications Ltd , Switzerland. http://hdl.handle.net/20.500.12708/30782 ( reposiTUm)
Stampfer, B., Grill, A., & Waltl, M. (2020). Advanced Electrical Characterization of Single Oxide Defects Utilizing Noise Signals. In T. Grasser (Ed.), Noise in Nanoscale Semiconductor Devices (pp. 229–257). Springer International Publishing. https://doi.org/10.1007/978-3-030-37500-3_7 ( reposiTUm)
Waldhoer, D., El-Sayed, A.-M. B., Wimmer, Y., Waltl, M., & Grasser, T. (2020). Atomistic Modeling of Oxide Defects. In T. Grasser (Ed.), Noise in Nanoscale Semiconductor Devices (pp. 609–648). Springer International Publishing. https://doi.org/10.1007/978-3-030-37500-3_18 ( reposiTUm)
Gnam, L., Manstetten, P., Hössinger, A., Selberherr, S., & Weinbub, J. (2019). Accelerating Flux Calculations Using Sparse Sampling. In L. Filipovic & T. Grasser (Eds.), Miniaturized Transistors (pp. 176–192). MDPI. https://doi.org/10.3390/mi9110550 ( reposiTUm)
Knobloch, T., Rzepa, G., Illarionov, Y. Y., Waltl, M., Polyushkin, D., Pospischil, A., Furchi, M., Mueller, T., & Grasser, T. (2017). (Invited) Impact of Gate Dielectrics on the Threshold Voltage in MoS2Transistors. In D. Misra, S. De Gendt, M. Houssa, K. Kita, & D. Landheer (Eds.), ECS Transactions (pp. 203–217). ECS Transactions. https://doi.org/10.1149/08001.0203ecst ( reposiTUm)
Grasser, T., Langer, E., & Selberherr, S. (2015). INSTITUT FÜR MIKROELEKTRONIK / INSTITUTE FOR MICROELECTRONICS. In K. Unterrainer (Ed.), Die Fakultät für Elektrotechnik und Informationstechnik / The Faculty of Electrical Engineering and Information Technology (Vol. 4, pp. 57–62). Böhlau. https://doi.org/10.7767/9783205202240-006 ( reposiTUm)
Kaczer, B., Grasser, T., Franco, J., Toledano-Luque, M., Roussel, J., Cho, M., Simoen, E., & Groeseneken, G. (2015). Recent Trends in Bias Temperature Instability. In R. Reis, Y. Cao, & G. Wirth (Eds.), Circuit Design for Reliability (pp. 5–19). Springer New York. https://doi.org/10.1007/978-1-4614-4078-9_2 ( reposiTUm)
Bina, M., & Rupp, K. (2015). The Spherical Harmonics Expansion Method for Assessing Hot Carrier Degradation. In T. Grasser (Ed.), Hot Carrier Degradation in Semiconductor Devices (pp. 197–220). Springer International Publishing. https://doi.org/10.1007/978-3-319-08994-2_6 ( reposiTUm)
Tyaginov, S. (2015). Physics-Based Modeling of Hot-Carrier Degradation. In T. Grasser (Ed.), Hot Carrier Degradation in Semiconductor Devices (pp. 105–150). Springer International Publishing. https://doi.org/10.1007/978-3-319-08994-2_4 ( reposiTUm)
Schanovsky, F., & Grasser, T. (2013). On the Microscopic Limit of the RD Model. In T. Grasser (Ed.), Bias Temperature Instability for Devices and Circuits (pp. 379–408). Springer New York. https://doi.org/10.1007/978-1-4614-7909-3_15 ( reposiTUm)
Goes, W., Schanovsky, F., & Grasser, T. (2013). Advanced Modeling of Oxide Defects. In T. Grasser (Ed.), Bias Temperature Instability for Devices and Circuits (pp. 409–446). Springer New York. https://doi.org/10.1007/978-1-4614-7909-3_16 ( reposiTUm)
Grasser, T. (2013). The Capture/Emission Time Map Approach to the Bias Temperature Instability. In T. Grasser (Ed.), Bias Temperature Instability for Devices and Circuits (pp. 447–481). Springer New York. https://doi.org/10.1007/978-1-4614-7909-3_17 ( reposiTUm)
Rupp, K., Jüngel, A., & Grasser, T. (2012). A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors. In R. Keller, D. Kramer, & J.-P. Weiss (Eds.), Facing the Multicore-Challenge II. Springer Berlin Heidelberg. http://hdl.handle.net/20.500.12708/27606 ( reposiTUm)
Rupp, K., Jüngel, A., & Grasser, T. (2012). Deterministic Numerical Solution of the Boltzmann Transport Equation. In R. Keller, D. Kramer, & J.-P. Weiss (Eds.), Mathematics in Industry (pp. 53–59). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-642-25100-9_7 ( reposiTUm)
Tyaginov, S. E., Starkov, I., Enichlmair, H., Park, J. M., Jungemann, C., & Grasser, T. (2011). Physics-Based Hot-Carrier Degradation Modeling. In R. Sah (Ed.), ECS Transactions (pp. 321–352). ECS Transactions. https://doi.org/10.1149/1.3572292 ( reposiTUm)
Goes, W., Schanovsky, F., Hehenberger, P., Wagner, P.-J., & Grasser, T. (2010). (Invited) Charge Trapping and the Negative Bias Temperature Instability. In ECS Transactions (pp. 565–589). ECS Transactions. https://doi.org/10.1149/1.3481647 ( reposiTUm)
Triebl, O., & Grasser, T. (2010). Numerical Power/HV Device Modeling. In W. Grabinski & T. Gneiting (Eds.), POWER/HVMOS Devices Compact Modeling (pp. 1–31). Springer Netherlands. https://doi.org/10.1007/978-90-481-3046-7_1 ( reposiTUm)
Vasicek, M., Esseni, D., Fiegna, C., & Grasser, T. (2010). Modeling and Simulation Approaches for Drain Current Computation. In Nanoscale CMOS: Innovative Materials, Modeling and Characterization (pp. 259–285). Wiley. http://hdl.handle.net/20.500.12708/26992 ( reposiTUm)
Grasser, T., Goes, W., & Kaczer, B. (2009). Critical Modeling Issues in Negative Bias Temperature Instability. In R. Ekwal Sah, J. Zhang, J. Deen, J. Yota, & A. Toriumi (Eds.), ECS Transactions (pp. 265–287). ECS Transactions. https://doi.org/10.1149/1.3122096 ( reposiTUm)
Grasser, T., Gös, W., & Kaczer, B. (2008). Towards Engineering Modeling of Negative Bias Temperature Instability. In Defects in Microelectronic Materials and Devices (pp. 399–436). Taylor and Francis/CRC Press. http://hdl.handle.net/20.500.12708/26256 ( reposiTUm)
Kaczer, B., Grasser, T., Fernandez, R., & Groeseneken, G. (2007). Toward Understanding the Wide Distribution of Time Scales in Negative Bias Temperature Instability. In R. Sah, J. Zhang, Y. Kamakura, M. Deen, & J. Yota (Eds.), ECS Transactions (pp. 265–281). ECS Transactions. https://doi.org/10.1149/1.2728801 ( reposiTUm)
Ceric, H., Heinzl, R., Hollauer, C., Grasser, T., & Selberherr, S. (2006). Microstructure and Stress Aspects of Electromigration Modeling. In Stress-Induced Phenomena in Metallization (pp. 262–268). American Institute of Physics. http://hdl.handle.net/20.500.12708/25011 ( reposiTUm)
Wagner, M., Span, G., Holzer, S., Palankovski, V., Triebl, O., & Grasser, T. (2006). Power Output Improvement of Silicon-Germanium Thermoelectric Generators. In ECS Transactions (pp. 1151–1162). ECS Transactions. https://doi.org/10.1149/1.2355909 ( reposiTUm)
Grasser, T. (2004). Closure Relations for Macroscopic Transport Models in Semiconductor Device Simulation. In Recent Research Developments in Applied Physics Vol. 7 - 2004 Part II (pp. 423–446). Transworld Research Network. http://hdl.handle.net/20.500.12708/24974 ( reposiTUm)

Bücher

Filipovic, L., & Grasser, T. (Eds.). (2022). Miniaturized Transistors, Volume II. MDPI. https://doi.org/10.3390/books978-3-0365-4170-9 ( reposiTUm)
Grasser, T. (Ed.). (2020). Noise in Nanoscale Semiconductor Devices. Springer Science+Business Media New York. https://doi.org/10.1007/978-3-030-37500-3 ( reposiTUm)
Filipovic, L., & Grasser, T. (Eds.). (2019). Miniaturized Transistors. MDPI. https://doi.org/10.3390/books978-3-03921-011-4 ( reposiTUm)
Grasser, T. (Ed.). (2014). Hot Carrier Degradation in Semiconductor Devices. Springer International Publishing. https://doi.org/10.1007/978-3-319-08994-2 ( reposiTUm)
Grasser, T. (Ed.). (2013). Bias Temperature Instability for Devices and Circuits. Springer Science+Business Media New York. https://doi.org/10.1007/978-1-4614-7909-3 ( reposiTUm)
Organic Electronics. (2009). In G. Meller & T. Grasser (Eds.), Advances in Polymer Science. Springer-Verlag, Berlin-Heidelberg. https://doi.org/10.1007/978-3-642-04538-7 ( reposiTUm)
Grasser, T., & Selberherr, S. (Eds.). (2007). Simulation of Semiconductor Processes and Devices 2007. Springer-Verlag, Wien - New York. https://doi.org/10.1007/978-3-211-72861-1 ( reposiTUm)

Präsentationen

Sokolovic, I., Rasouli, S., Wu, B., Sofer, Z., Matković, A., Schmid, M., Diebold, U., & Grasser, T. (2024, March 19). PtSe₂ vdW single-crystal surfaces studied at the atomic scale with ncAFM [Conference Presentation]. 87. Jahrestagung der DPG und DPG-Frühjahrstagung, Berlin, Germany. http://hdl.handle.net/20.500.12708/196026 ( reposiTUm)
Wilhelmer, C., Milardovich, D., Waldhör, D., Cvitkovich, L., Waltl, M., & Grasser, T. (2023, May 30). Intrinsic Charge Trapping Sites in Amorphous Si₃N₄ [Conference Presentation]. European Materials Research Society (E-MRS) Spring Meeting 2023, Strasbourg, France. ( reposiTUm)
Wilhelmer, C., Milardovich, D., Waldhör, D., Cvitkovich, L., Waltl, M., & Grasser, T. (2023, May 29). Charged instrinsic defect states in amorphous Si3N4 [Conference Presentation]. European Materials Research Society (E-MRS) Spring Meeting 2023, Strasbourg, France. http://hdl.handle.net/20.500.12708/188962 ( reposiTUm)
Illarionov, Y., Knobloch, T., Waltl, M., Smets, Q., Panarella, L., Kaczer, B., Schram, T., Brems, S., Cott, D., Asselberghs, I., & Grasser, T. (2022). Top Gate Length Dependence of Hysteresis in 300mm FAB MoS2 FETs. Graphne 2022, Aachen, Germany. http://hdl.handle.net/20.500.12708/153516 ( reposiTUm)
Illarionov, Y., Knobloch, T., Uzlu, B., Sokolov, N. S., Lemme, M. C., & Grasser, T. (2022). Highly stable GFETs with 2nm crystalline CaF2 insulators. 6th International Conference on Physics of 2D materials based electronics and optoelectronics (ICP2DC6, 2022), Yerevan, Armenia. http://hdl.handle.net/20.500.12708/153517 ( reposiTUm)
Knobloch, T., & Grasser, T. (2022). Scalable and Reliable Gate Insulators for 2D Material-Based FETs. IEEE Latin America Electron Devices Conference (LAEDC 2022), Puebla, Mexico. http://hdl.handle.net/20.500.12708/153518 ( reposiTUm)
Nazzari, D., Genser, J. A., Ritter, V., Bethge, O., Bertagnolli, E., Grasser, T., Weber, W. M., & Lugstein, A. (2022, September 0). Epitaxial growth of crystalline CaF2 on silicene by molecular beam epitaxy [Conference Presentation]. European Material Research Society (E-MRS) Fall Meeting 2022, Warsaw, Poland. ( reposiTUm)
Nazzari, D., Genser, J. A., Ritter, V., Bethge, O., Bertagnolli, E., Grasser, T., Weber, W. M., & Lugstein, A. (2022, September 12). Epitaxial growth of crystalline CaF2 on silicene by molecular beam epitaxy [Conference Presentation]. 19th Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST-19), Mondsee, Austria. ( reposiTUm)
Illarionov, Y., Banshchikov, A. G., Sokolov, N. S., Fedorov, V. V., Suturin, S. M., Vexler, M. I., Knobloch, T., Polyushkin, D. K., Mueller, T., & Grasser, T. (2021). Epitaxial Fluorides as a Universal Platform for More Moore and More than Moore Electronics Based on 2D Materials. Scientific Council Meeting of the Russian Academy of Sciences, Moscow, Russian Federation (the). http://hdl.handle.net/20.500.12708/91345 ( reposiTUm)
Illarionov, Y., Knobloch, T., & Grasser, T. (2021). Crystalline Insulators for Scalable 2D Nanoelectronics. INFOS 2021, Rende, Italy. http://hdl.handle.net/20.500.12708/91403 ( reposiTUm)
Illarionov, Y., Banshchikov, A. G., Polyushkin, D. K., Wachter, S., Vexler, M. I., Sokolov, N. S., Müller, T., & Grasser, T. (2019). Reliability and Thermal Stability of MoS2 FETs with Ultrathin CaF2 Insulator. IEEE Nanotechnology Materials and Devices Conference (NMDC), Stockholm, Sweden. http://hdl.handle.net/20.500.12708/91243 ( reposiTUm)
Grasser, T. (2019). CaF2 Insulators for Ultrascaled 2D Field Effect Transistors. Workshop “Wafer-scale Integration of 2D materials,” Aachen, Germany. http://hdl.handle.net/20.500.12708/91303 ( reposiTUm)
Grasser, T. (2019). CaF2 Insulators for Ultrascaled 2D Field Effect Transistors. IEEE EDS Distinguished Lecture at RWTH Aachen, Aachen, Germany. http://hdl.handle.net/20.500.12708/91135 ( reposiTUm)
Illarionov, Y., Banshchikov, A. G., Polyushkin, D. K., Wachter, S., Vexler, M. I., Sokolov, N. S., Müller, T., & Grasser, T. (2019). CaF2 Insulators for Ultrascaled 2D Field Effect Transistors. Graphene Week, Delft, Netherlands (the). http://hdl.handle.net/20.500.12708/91134 ( reposiTUm)
Grasser, T. (2018). Multiscale Reliability Modeling. IEEE EDS Distinguished Lecture at the SINANO Sommer School 2018, Tarragona, Spain. http://hdl.handle.net/20.500.12708/91176 ( reposiTUm)
Illarionov, Y., Stampfer, B., Zhang, F., Knobloch, T., Wu, P., Waltl, M., Grill, A., Appenzeller, J., & Grasser, T. (2018). Characterization of Single Defects: from Si to MoS2 FETs. International Conference on Physics of 2D Crystals (ICP2C3), Valetta, Malta. http://hdl.handle.net/20.500.12708/91060 ( reposiTUm)
Ostermaier, C., Lagger, P. W., Reiner, M., Grill, A., Stradiotto, R., Pobegen, G., Grasser, T., Pietschnig, R., & Pogany, D. (2017). Review of bias-temperature instabilities at the III-N/dielectric interface. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, Netherlands (the). http://hdl.handle.net/20.500.12708/90942 ( reposiTUm)
Illarionov, Y., Waltl, M., Knobloch, T., Rzepa, G., & Grasser, T. (2017). Reliability Perspective of 2D Electronics. International Conference on Physics of 2D Crystals (ICP2C2), Ha Long, Viet Nam. http://hdl.handle.net/20.500.12708/90927 ( reposiTUm)
Grasser, T. (2017). Charge Trapping and Time-dependent Variability in Low-Voltage MOS Transistors. Short Course at IEEE EDS Electron Devices Technology and Manufacturing Conference, Toyama, Japan. http://hdl.handle.net/20.500.12708/91178 ( reposiTUm)
Grasser, T. (2017). Charge Trapping and Time-dependent Variability in CMOS Transistors. IEEE EDS Distinguished Lecture, Campinas, Brazil. http://hdl.handle.net/20.500.12708/91179 ( reposiTUm)
Grasser, T. (2017). Defects in 3D and 2D Field Effect Transistors: Characterization and Modeling. IEEE EDS Distinguished Lecture, Campinas, Brazil. http://hdl.handle.net/20.500.12708/91177 ( reposiTUm)
Grasser, T. (2015). Charge Transfer of Single Holes in Nanoscale MOS Transistors: Linking DFT to Experiment. CECAM-Workshop on Structural and Electronic Phenomena at Interfaces of Nanoscale Oxides, Lausanne, Switzerland. http://hdl.handle.net/20.500.12708/90702 ( reposiTUm)
Grasser, T. (2015). Advanced Modeling and Characterization of Bias Temperature Instabilities and Hot Carrier Degradation. D2T Symposium, Tokyo, Japan. http://hdl.handle.net/20.500.12708/90703 ( reposiTUm)
Grasser, T. (2015). Recent Progress in Understanding the Bias Temperature Instability: from Single Traps to Distributions. IEEE EDS Distinguished Lecture, Campinas, Brazil. http://hdl.handle.net/20.500.12708/90699 ( reposiTUm)
Grasser, T. (2015). Advanced Modeling and Characterization of Bias Temperature Instabilities and Hot Carrier Degradation. Kyoto Institute of Technology, Kyoto, Japan. http://hdl.handle.net/20.500.12708/90701 ( reposiTUm)
Grasser, T. (2015). Oxide Defects in MOS Transistors: Characterization and Modeling. IEEE EDS Distinguished Lecture, Campinas, Brazil. http://hdl.handle.net/20.500.12708/90698 ( reposiTUm)
Rupp, K., Jüngel, A., & Grasser, T. (2015). A Performance Comparison of Algebraic Multigrid Preconditioners on GPUs and MIC. Copper Mountain Conference on Multigrid Methods, Copper Mountain, United States of America (the). http://hdl.handle.net/20.500.12708/90531 ( reposiTUm)
Ostermaier, C., Lagger, P. W., Prechtl, G., Grill, A., Grasser, T., & Pogany, D. (2015). The role of electron transport in the charge trapping at the III-N/dielectric interface in AlGaN/GaN MIS-HEMT structures. Semiconductor Interface Specialists Conference, Arlington, United States of America (the). http://hdl.handle.net/20.500.12708/90593 ( reposiTUm)
Grasser, T. (2015). Oxide Defects in MOS Transistors: Characterization and Modeling. Workshop on Dielectrics in Microelectronics (WODIM), Catania, Italy. http://hdl.handle.net/20.500.12708/90700 ( reposiTUm)
Rupp, K., Bina, M., Morhammer, A., Grasser, T., & Jüngel, A. (2015). ViennaSHE: A Semiconductor Device Simulator Based on the Spherical Harmonics Expansion Method. Workshop on Applied Mathematics and Simulation for Semiconductors (AMaSIS), Berlin, Germany. http://hdl.handle.net/20.500.12708/90519 ( reposiTUm)
Grasser, T. (2014). Bias Temperature Instability in CMOS Nanodevices. SINANO Summer School, Bertinoro, Italy. http://hdl.handle.net/20.500.12708/90704 ( reposiTUm)
Grasser, T. (2014). Characterization and Modeling of Charge Trapping in CMOS Transistors. International Workshop on Characterization and Modeling of Memory Devices, Agrate Brianza, Italy. http://hdl.handle.net/20.500.12708/90705 ( reposiTUm)
Grasser, T. (2014). Characterization and Modeling of Charge Trapping and Hot Carrier Degradation. IEEE EDS Distinguished Lecture, Campinas, Brazil. http://hdl.handle.net/20.500.12708/90697 ( reposiTUm)
Grasser, T. (2012). Aging in CMOS Devices: From Microscopic Physics to Compact Models. The 2012 Forum on Specification & Design Languages, Vienna, Austria, Austria. http://hdl.handle.net/20.500.12708/89833 ( reposiTUm)
Schanovsky, F., & Grasser, T. (2012). Bias Temperature Instabilities in highly-scaled MOSFETs. 2012 CMOS Emerging Technologies, Vancouver, BC Canada, Non-EU. http://hdl.handle.net/20.500.12708/90031 ( reposiTUm)
Grasser, T. (2011). Modeling of Device Reliability. Tutorial at 37th European Solid-State Devices Conference, Helsinki, Finland, EU. http://hdl.handle.net/20.500.12708/89549 ( reposiTUm)
Grasser, T. (2011). Cause, Detection, and Impact of Charge Trapping on Aging. VLSI Symposium Short Course, Kyoto, Japan, Non-EU. http://hdl.handle.net/20.500.12708/89548 ( reposiTUm)
Grasser, T. (2011). Oxide Defects: From Microscopic Physics to Compact Models. SISPAD Workshop, Nürnberg, Germany, EU. http://hdl.handle.net/20.500.12708/89547 ( reposiTUm)
Grasser, T. (2010). Transport Modeling in Modern Semiconductor Devices. CoMoN Workshop 2010, Tarragona, EU. http://hdl.handle.net/20.500.12708/89456 ( reposiTUm)
Grasser, T. (2010). Recent Developments in Device Reliability Modeling. MOS-AK ESSDERC Companion Workshop, Grenoble, Austria. http://hdl.handle.net/20.500.12708/89400 ( reposiTUm)
Grasser, T. (2010). Statistical Reliability in Nanoscale Devices. SISPAD Workshop, Nürnberg, Germany, EU. http://hdl.handle.net/20.500.12708/89401 ( reposiTUm)
Franco, J., Kaczer, B., Mitard, J., Eneman, G., Roussel, Ph. J., Crupi, F., Grasser, T., Witters, L., Hoffmann, T. Y., & Groeseneken, G. (2010). Implications of Channel Hot Carrier Degradation in Si0.45Ge0.55 pMOSFETs. Semiconductor Interface Specialists Conference (SISC), Arlington, United States of America (the). http://hdl.handle.net/20.500.12708/89459 ( reposiTUm)
Grasser, T., Reisinger, H., Wagner, P.-J., Gös, W., Schanovsky, F., & Kaczer, B. (2010). The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, Netherlands (the). http://hdl.handle.net/20.500.12708/89410 ( reposiTUm)
Toledano-Luque, M., Kaczer, B., Roussel, Ph. J., Degraeve, R., Franco, J., Kauerauf, T., Grasser, T., & Groeseneken, G. (2010). Depth Localization of Trapped Holes in SiON after Positive and Negative Gate Stress. Semiconductor Interface Specialists Conference (SISC), Arlington, United States of America (the). http://hdl.handle.net/20.500.12708/89460 ( reposiTUm)
Grasser, T. (2010). Characterization and Modeling of the Negative Bias Temperature Instability. VDE/VDI GMM Workshop “Stand und Perspektiven von SOI-Technologien und Anwendungen,” München, Germany. http://hdl.handle.net/20.500.12708/89402 ( reposiTUm)
Franco, J., Kaczer, B., Stesmans, A., Afanas´Ev, V., Martens, K., Aoulaiche, M., Grasser, T., Mitard, J., & Groeseneken, G. (2009). Impact of Si-Passivation Thickness and Processing on NBTI Reliability of Ge and SiGe pMOSFETs. 40#^{th} Semiconductor Interface Specialists Conference (SISC), Washington, Non-EU. http://hdl.handle.net/20.500.12708/89269 ( reposiTUm)
Grasser, T. (2009). Understanding Negative Bias Temperature Instability in the Context of Hole Trapping. International Conference on Insulating Films on Semiconductors (INFOS), Krakau, Poland. http://hdl.handle.net/20.500.12708/89467 ( reposiTUm)
Grasser, T. (2009). Physical Mechanisms and Modeling of the Bias Temperature Instability. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, Netherlands (the). http://hdl.handle.net/20.500.12708/89477 ( reposiTUm)
Grasser, T. (2008). Device Simulation Based on the Statistical Moments of the Boltzmann Transport Equation. 3rd SINANO Device Modeling Summer School, Bertinoro, Italy, EU. http://hdl.handle.net/20.500.12708/89643 ( reposiTUm)
Aichinger, T., Nelhiebel, M., & Grasser, T. (2008). On the Temperature Dependence of NBTI Recovery. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/88924 ( reposiTUm)
Grasser, T., Vasicek, M., & Wagner, M. (2007). Higher-Order Moment Models for Engineering Applications. Equadiff, Wien, Austria. http://hdl.handle.net/20.500.12708/88671 ( reposiTUm)
Martens, K., Kaczer, B., Grasser, T., De Jaeger, B., Meuris, M., Groeseneken, G., & Maes, H. E. (2007). Charge Pumping Charcaterization of Germanium MOSFETs. Semiconductor Interface Specialists Conference (SISC), Arlington, Non-EU. http://hdl.handle.net/20.500.12708/88782 ( reposiTUm)
Grasser, T. (2005). Higher-Order Moment Models for Engineering Applications. Recent Advances in Modeling and Simulation of Semiconductor Devices and Circuits (SEMIC), Milano, Austria. http://hdl.handle.net/20.500.12708/88270 ( reposiTUm)
Holzer, S., Hollauer, C., Ceric, H., Wagner, S., Langer, E., Grasser, T., & Selberherr, S. (2005). Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress. SPIE VLSI Circuits and Systems, Sevilla, Spain, Austria. http://hdl.handle.net/20.500.12708/88317 ( reposiTUm)
Grasser, T. (2005). Mixed Mode Device/Circuit Simulation. MOS-AK ESSDERC Companion Workshop, Grenoble, Austria. http://hdl.handle.net/20.500.12708/88282 ( reposiTUm)
Wagner, S., Grasser, T., & Selberherr, S. (2004). Evaluation of Linear Solver Modules for Semiconductor Device Simulation. International Conference on Mathematical Problems in Engineering and Aerospace Sciences (ICNPAA), Timisoara, Austria. http://hdl.handle.net/20.500.12708/88244 ( reposiTUm)
Ayalew, T., Gehring, A., Grasser, T., & Selberherr, S. (2004). Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, Netherlands (the). http://hdl.handle.net/20.500.12708/88145 ( reposiTUm)
Ayalew, T., Gehring, A., Park, J. M., Grasser, T., & Selberherr, S. (2003). Improving SiC Lateral DMOSFET Reliability under High Field Stress. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, Netherlands (the). http://hdl.handle.net/20.500.12708/87982 ( reposiTUm)
Grasser, T. (2001). Simulation of SOI-Devices. VDE/VDI GMM Workshop “Stand und Perspektiven von SOI-Technologien und Anwendungen,” München, Austria. http://hdl.handle.net/20.500.12708/88281 ( reposiTUm)

Berichte

Grasser, T., Karner, M., Kernstock, C., Kosina, H., & Triebl, O. (2010). Customized Software Development Report. http://hdl.handle.net/20.500.12708/36740 ( reposiTUm)
Grasser, T. (2010). Verification and Validation of the Coupled HCI & NBTI Model for HV Devices. http://hdl.handle.net/20.500.12708/36754 ( reposiTUm)
Rupp, K., Jüngel, A., & Grasser, T. (2010). Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation for Semiconductors (ASC Report 10/2010; pp. 1–32). Institute of Analysis and Scientific Computing, TU Wien. http://hdl.handle.net/20.500.12708/26785 ( reposiTUm)
Ceric, H., Grasser, T., Orio, R., Pourfath, M., Vasicek, M., & Selberherr, S. (2008). VISTA Status Report July 2008. http://hdl.handle.net/20.500.12708/34954 ( reposiTUm)
Grasser, T. (2008). Report on Coupled NBTI and HC Models for HV Devices. http://hdl.handle.net/20.500.12708/36738 ( reposiTUm)
Grasser, T., Gös, W., Triebl, O., Hehenberger, P. P., Wagner, P.-J., Schwaha, P., Heinzl, R., Holzer, S., Entner, R., Wagner, S., & Schanovsky, F. (2007). 3 Year Report 2005-2007. http://hdl.handle.net/20.500.12708/31397 ( reposiTUm)
Vasicek, M., & Grasser, T. (2007). Higher-Order Macroscopic Transport Models (No. P18316-N13). http://hdl.handle.net/20.500.12708/31467 ( reposiTUm)
Grützmacher, D., Dhar, S., Milovanovic, G., Grasser, T., & Kosina, H. (2007). Disposable Dot Field Effect Transistor for High Speed Si Integrated Circuits. http://hdl.handle.net/20.500.12708/31417 ( reposiTUm)
Grasser, T., Gritsch, M., Heitzinger, C., Hössinger, A., & Selberherr, S. (2001). VISTA Status Report December 2001. http://hdl.handle.net/20.500.12708/31432 ( reposiTUm)
Dragosits, K., Grasser, T., & Strasser, R. (1999). VISTA Status Report June 1999. http://hdl.handle.net/20.500.12708/31435 ( reposiTUm)
Grasser, T., Hössinger, A., Kosik, R., Mlekus, R., Pyka, W., Stockinger, M., & Selberherr, S. (1999). VISTA Status Report December 1999. http://hdl.handle.net/20.500.12708/31436 ( reposiTUm)
Dragosits, K., Grasser, T., & Selberherr, S. (1998). VISTA Status Report June 1998. http://hdl.handle.net/20.500.12708/31437 ( reposiTUm)
Grasser, T., Hössinger, A., Kirchauer, H., Knaipp, M., Martins, R., Plasun, R., Rottinger, M., Schrom, G., & Selberherr, S. (1997). VISTA Status Report December 1997. http://hdl.handle.net/20.500.12708/31440 ( reposiTUm)

Hochschulschriften

Grasser, T. (2002). Simulation of miniaturized semiconductor devices [Professorial Dissertation, Technische Universität Wien]. reposiTUm. http://hdl.handle.net/20.500.12708/180242 ( reposiTUm)
Grasser, T. (1999). Mixed-mode device simulation [Dissertation, Technische Universität Wien]. reposiTUm. https://doi.org/10.34726/hss.1999.02581881 ( reposiTUm)