Sheikholeslami, A., Parhami, F., Puchner, H., & Selberherr, S. (2007). Planarization of Silicon Dioxide and Silicon Nitride Passivation Layers. Journal of Physics: Conference Series, 61, 1051–1055. https://doi.org/10.1088/1742-6596/61/1/208 ( reposiTUm)

Puchner, H., & Selberherr, S. (1995). An Advanced Model for Dopant Diffusion in Polysilicon. IEEE Transactions on Electron Devices, 42(10), 1750–1755. https://doi.org/10.1109/16.464423 ( reposiTUm)

Stippel, H., Leitner, E., Pichler, Ch., Puchner, H., Strasser, E., & Selberherr, S. (1995). Process Simulation for the 1990s. Microelectronics Journal, 26(2–3), 203–215. https://doi.org/10.1016/0026-2692(95)98922-e ( reposiTUm)

Halama, S., Fasching, F., Fischer, C., Kosina, H., Leitner, E., Lindorfer, P., Pichler, Ch., Pimingstorfer, H., Puchner, H., Rieger, G., Schrom, G., Simlinger, T., Stiftinger, M., Stippel, H., Strasser, E., Tuppa, W., Wimmer, K., & Selberherr, S. (1995). The Viennese Integrated System for Technology CAD Applications. Microelectronics Journal, 26(2–3), 137–158. https://doi.org/10.1016/0026-2692(95)98918-h ( reposiTUm)

Sheikholeslami, A., Parhami, F., Puchner, H., & Selberherr, S. (2006). Planarization of Silicon Dioxide and Silicon Nitride Passivation Layers. In International Conference on Nanoscience and Technology (ICNT 2006) (pp. 163–164). http://hdl.handle.net/20.500.12708/69229 ( reposiTUm)

Sheikholeslami, A., Heinzl, R., Holzer, S., Heitzinger, C., Spevak, M., Leicht, M., Häberlen, O., Fugger, J., Badrieh, F., Parhami, F., Puchner, H., Grasser, T., & Selberherr, S. (2006). Applications of Two- and Three-Dimensional General Topography Simulator in Semiconductor Manufacturing Processes. In Proceedings of the 14#^{th} Iranian Conference on Electrical Engineering ICEE 2006 (p. 4). http://hdl.handle.net/20.500.12708/69060 ( reposiTUm)

Sheikholeslami, A., Selberherr, S., Parhami, F., & Puchner, H. (2006). Planarization of Passivation Layers during Manufacturing Processes of Image Sensors. In Proceedings of the 6#^{th} International Conference on Numerical Simulation of Optoelectronic Devices (pp. 35–36). http://hdl.handle.net/20.500.12708/69198 ( reposiTUm)

Wittmann, R., Puchner, H., Ceric, H., & Selberherr, S. (2006). Impact of Random Bit Values on NBTI Lifetime of an SRAM Cell. In Proceedings 13#^{th} International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (pp. 41–44). http://hdl.handle.net/20.500.12708/69130 ( reposiTUm)

Wittmann, R., Puchner, H., Hinh, L., Ceric, H., Gehring, A., & Selberherr, S. (2005). Simulation of Dynamic NBTI Degradation for a 90 nm CMOS Technology. In NSTI Nanotech Technical Proceedings (pp. 29–32). http://hdl.handle.net/20.500.12708/68488 ( reposiTUm)

Wittmann, R., Puchner, H., Hinh, L., Ceric, H., Gehring, A., & Selberherr, S. (2005). Impact of NBTI-driven Parameter Degradation on Lifetime of a 90nm p-MOSFET. In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 99–102). http://hdl.handle.net/20.500.12708/68996 ( reposiTUm)

Sheikholeslami, A., Parhami, F., Heinzl, R., Al-Ani, E., Heitzinger, C., Badrieh, F., Puchner, H., Grasser, T., & Selberherr, S. (2005). Applications of Three-Dimensional Topography Simulation in the Design of Interconnect Lines. In 2005 International Conference On Simulation of Semiconductor Processes and Devices. 2005 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. IEEE. https://doi.org/10.1109/sispad.2005.201504 ( reposiTUm)

Sheikholeslami, A., Al-Ani, E., Heinzl, R., Heitzinger, C., Parhami, F., Badrieh, F., Puchner, H., Grasser, T., & Selberherr, S. (2005). Level Set Method Based General Topography Simulator and its Application in Interconnect Processes. In ULIS 2005 6#^{th} International Conference on Ultimate Integration of Silicon (pp. 139–142). http://hdl.handle.net/20.500.12708/68462 ( reposiTUm)

Puchner, H., & Selberherr, S. (1995). A Two-Dimensional Dopant Diffusion Model for Polysilicon. In Abstracts Meeting on Impurity Diffusion and Defects in Silicon and Related Materials (pp. 16–17). http://hdl.handle.net/20.500.12708/68399 ( reposiTUm)

Puchner, H., & Selberherr, S. (1995). Simulation of Ion Implantation Using the Four-Parameter Kappa Distribution Function. In Proceedings Solid-State and Integrated-Circuit Technology Conference (pp. 295–297). http://hdl.handle.net/20.500.12708/68415 ( reposiTUm)

Puchner, H., & Selberherr, S. (1994). Dynamic Grain-Growth and Static Clustering Effects on Dopant Diffusion in Polysilicon. In Proceedings NUPAD V, Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (pp. 109–112). http://hdl.handle.net/20.500.12708/68392 ( reposiTUm)

Halama, S., Fasching, F., Fischer, C., Kosina, H., Leitner, E., Pichler, Ch., Pimingstorfer, H., Puchner, H., Rieger, G., Schrom, G., Simlinger, T., Stiftinger, M., Stippel, H., Strasser, E., Tuppa, W., Wimmer, K., & Selberherr, S. (1993). The Viennese Integrated System for Technology CAD Applications. In Technology CAD Systems (pp. 197–236). https://doi.org/10.1007/978-3-7091-9315-0_10 ( reposiTUm)

Sheikholeslami, A., Heitzinger, C., Puchner, H., Badrieh, F., & Selberherr, S. (2003). Simulation of Void Formation in Interconnect Lines. SPIE VLSI Circuits and Systems, Sevilla, Spain. http://hdl.handle.net/20.500.12708/91306 ( reposiTUm)

Martins, R., Puchner, H., Selberherr, S., Simlinger, T., & Tuppa, W. (1996). VISTA Status Report June 1996. http://hdl.handle.net/20.500.12708/31441 ( reposiTUm)

Mlekus, R., Pichler, C., Puchner, H., Selberherr, S., & Tuppa, W. (1995). VISTA Status Report June 1995. http://hdl.handle.net/20.500.12708/31443 ( reposiTUm)

Puchner, H. (2001). Process integration for deep-submicron CMOS technology [Professorial Dissertation, Technische Universität Wien]. reposiTUm. http://hdl.handle.net/20.500.12708/179690 ( reposiTUm)