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Ceric, H., Zahedmanesh, H., Croes, K., Lacerda de Orio, R., & Selberherr, S. (2023). Electromigration-Induced Void Evolution and Failure of Cu/SiCN Hybrid Bonds. Journal of Applied Physics, 133(10), Article 105101. https://doi.org/10.1063/5.0134692 ( reposiTUm)

Saleh, A. S., Croes, K., Ceric, H., De Wolf, I., & Zahedmanesh, H. (2023). A framework for combined simulations of electromigration induced stress evolution, void nucleation, and its dynamics: Application to nano-interconnect reliability. Journal of Applied Physics, 134(13), 1–12. https://doi.org/10.1063/5.0165949 ( reposiTUm)

Saleh, A., Ceric, H., & Zahedmanesh, H. (2021). Void-Dynamics in Nano-Wires and the Role of Microstructure Investigated via a Multi-Scale Physics-Based Model. Journal of Applied Physics, 129(12), 125102. https://doi.org/10.1063/5.0039953 ( reposiTUm)

Ceric, H., Selberherr, S., Zahedmanesh, H., de Orio, R. L., & Croes, K. (2021). Review - Modeling Methods for Analysis of Electromigration Degradation in Nano-Interconnects. ECS Journal of Solid State Science and Technology, 10(3), 035003. https://doi.org/10.1149/2162-8777/abe7a9 ( reposiTUm)

Grill, A., Stampfer, B., Im, K.-S., Lee, J.-H., Ostermaier, C., Ceric, H., Waltl, M., & Grasser, T. (2019). Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs. Solid-State Electronics, 156, 41–47. https://doi.org/10.1016/j.sse.2019.02.004 ( reposiTUm)

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Sharma, P., Tyaginov, S., Jech, M., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J.-M., Ceric, H., & Grasser, T. (2016). The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in n- and p-channel LDMOS Devices. Solid-State Electronics, 115, 185–191. https://doi.org/10.1016/j.sse.2015.08.014 ( reposiTUm)

Coppeta, R. A., Holec, D., Ceric, H., & Grasser, T. (2015). Evaluation of Dislocation Energy in Thin Films. Philosophical Magazine, 95(2), 186–209. https://doi.org/10.1080/14786435.2014.994573 ( reposiTUm)

Sharma, P., Tyaginov, S. E., Wimmer, Y., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J. M., Minixhofer, R., Ceric, H., & Grasser, T. (2015). Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation. IEEE Transactions on Electron Devices, 62(6), 1811–1818. https://doi.org/10.1109/ted.2015.2421282 ( reposiTUm)

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Ceric, H., Orio, R., Zisser, W., & Selberherr, S. (2014). Microstructural Impact on Electromigration: A TCAD Study. Facta Universitatis - Series: Electronics and Energetics, 27(1), 1–11. https://doi.org/10.2298/fuee1401001c ( reposiTUm)

Zisser, W. H., Ceric, H., Weinbub, J., & Selberherr, S. (2014). Electromigration Reliability of Open TSV Structures. Microelectronics Reliability, 54(9–10), 2133–2137. https://doi.org/10.1016/j.microrel.2014.07.099 ( reposiTUm)

Singulani, A. P., Ceric, H., & Selberherr, S. (2013). Stress Evolution in the Metal Layers of TSVs with Bosch Scallops. Microelectronics Reliability, 53(9–11), 1602–1605. https://doi.org/10.1016/j.microrel.2013.07.132 ( reposiTUm)

Ceric, H., de Orio, R. L., & Selberherr, S. (2012). Interconnect Reliability Dependence on Fast Diffusivity Paths. Microelectronics Reliability, 52(8), 1532–1538. https://doi.org/10.1016/j.microrel.2011.09.035 ( reposiTUm)

de Orio, R. L., Ceric, H., & Selberherr, S. (2012). Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via. Microelectronics Reliability, 52(9–10), 1981–1986. https://doi.org/10.1016/j.microrel.2012.07.021 ( reposiTUm)

Starkov, I., Tyaginov, S., Enichlmair, H., Cervenka, J., Jungemann, C., Carniello, S., Park, J. M., Ceric, H., & Grasser, T. (2011). Hot-Carrier Degradation Caused Interface State Profile-Simulation versus Experiment. Journal of Vacuum Science & Technology B, 29(1), 01AB09. https://doi.org/10.1116/1.3534021 ( reposiTUm)

Ceric, H., & Selberherr, S. (2011). Electromigration in Submicron Interconnect Features of Integrated Circuits. Materials Science and Engineering: R: Reports, 71(5–6), 53–86. https://doi.org/10.1016/j.mser.2010.09.001 ( reposiTUm)

Starkov, I., Tyaginov, S., Enichlmair, H., Park, J. M., Ceric, H., & Grasser, T. (2011). Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements. Solid State Phenomena, 178–179, 267–272. https://doi.org/10.4028/www.scientific.net/ssp.178-179.267 ( reposiTUm)

Tyaginov, S., Starkov, I., Enichlmair, H., Jungemann, Ch., Park, J. M., Seebacher, E., Orio, R., Ceric, H., & Grasser, T. (2011). An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation. Microelectronics Reliability, 51(9–11), 1525–1529. https://doi.org/10.1016/j.microrel.2011.07.089 ( reposiTUm)

de Orio, R. L., Ceric, H., & Selberherr, S. (2011). A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects. Microelectronics Reliability, 51(9–11), 1573–1577. https://doi.org/10.1016/j.microrel.2011.07.049 ( reposiTUm)

Huang, R., Robl, W., Ceric, H., Detzel, T., & Dehm, G. (2010). Stress, Sheet Resistance, and Microstructure Evolution of Electroplated Cu Films During Self-Annealing. IEEE Transactions on Device and Materials Reliability, 10(1), 47–54. https://doi.org/10.1109/tdmr.2009.2032768 ( reposiTUm)

Huang, R., Taylor, A., Himmelsbach, S., Ceric, H., & Detzel, T. (2010). Apparatus for Measuring Local Stress of Metallic Films, Using an Array of Parallel Laser Beams during Rapid Thermal Processing. Measurement Science and Technology, 21(5), 55702–55710. http://hdl.handle.net/20.500.12708/168266 ( reposiTUm)

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Ceric, H., de Orio, R. L., Cervenka, J., & Selberherr, S. (2009). A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects. IEEE Transactions on Device and Materials Reliability, 9(1), 9–19. https://doi.org/10.1109/tdmr.2008.2000893 ( reposiTUm)

Ceric, H., & Selberherr, S. (2009). Editorial Preface to the Special Section on Electromigration Published in March 2009. IEEE Transactions on Device and Materials Reliability, 9(2), 103–103. https://doi.org/10.1109/tdmr.2009.2020086 ( reposiTUm)

Cervenka, J., Ceric, H., & Selberherr, S. (2008). Three-Dimensional Simulation of Sacrificial Etching. Microsystem Technologies, 14(4–5), 665–671. https://doi.org/10.1007/s00542-007-0491-1 ( reposiTUm)

Lacerda de Orio, R., Ceric, H., & Selberherr, S. (2008). Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress. Journal of Computational Electronics, 7(3), 128–131. https://doi.org/10.1007/s10825-008-0211-9 ( reposiTUm)

Movahhedi, M., Abdipour, A., Ceric, H., Sheikholeslami, A., & Selberherr, S. (2007). Optimization of the Perfectly Matched Layer for the Finite-Element Time-Domain Method. IEEE Microwave and Wireless Components Letters, 17(1), 10–12. https://doi.org/10.1109/lmwc.2006.887240 ( reposiTUm)

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Ceric, H., Orio, R., & Selberherr, S. (2012). TCAD Study of Electromigration Failure Modes in Sn-Based Solder Bumps. In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 264–267). http://hdl.handle.net/20.500.12708/72970 ( reposiTUm)

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Tyaginov, S. E., Starkov, I., Enichlmair, H., Jungemann, C., Park, J. M., Seebacher, E., Orio, R., Ceric, H., & Grasser, T. (2011). An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation. In Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (pp. 1525–1529). http://hdl.handle.net/20.500.12708/72336 ( reposiTUm)

Ceric, H., Orio, R., & Selberherr, S. (2011). Interconnect Reliability Dependence on Fast Diffusivity Paths. In Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2011) (p. 33). http://hdl.handle.net/20.500.12708/72181 ( reposiTUm)

Starkov, I., Ceric, H., Tyaginov, S., & Grasser, T. (2011). Analysis of worst-case hot-carrier conditions for n-type MOSFET. In 2011 7th Conference on Ph.D. Research in Microelectronics and Electronics. 7th Conference on PhD Research in Microelectronics and Electronics (PRIME), Madonna di Campiglio, Italy, EU. https://doi.org/10.1109/prime.2011.5966251 ( reposiTUm)

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Starkov, I., Tyaginov, S. E., Enichlmair, H., Park, J. M., Ceric, H., & Grasser, T. (2011). Accurate Extraction of MOSFET Interface State Spatial Distribution from Charge Pumping Measurements. In GADEST 2011: Abstract Booklet (pp. 105–106). http://hdl.handle.net/20.500.12708/72330 ( reposiTUm)

Tyaginov, S., Starkov, I., Triebl, O., Ceric, H., Grasser, T., Enichlmair, H., Park, J.-M., & Jungemann, C. (2011). Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET. In 2011 International Conference on Simulation of Semiconductor Processes and Devices. 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan. IEEE. https://doi.org/10.1109/sispad.2011.6035065 ( reposiTUm)

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Huang, R., Robl, W., Dehm, G., Ceric, H., & Detzel, T. (2010). Disparate Tendency of Stress Evolution of Thin and Thick Electroplated Cu Films at Room Temperature. In Proceedings of the 17#^{th} International Symposium on the Physical & Failure Analysis of Integrated Circuits (pp. 1–6). http://hdl.handle.net/20.500.12708/72887 ( reposiTUm)

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Lacerda de Orio, R., & Ceric, H. (2008). Analysis of electromigration in redundant vias. In 2008 International Conference on Simulation of Semiconductor Processes and Devices. 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kanagawa, Japan. IEEE. https://doi.org/10.1109/sispad.2008.4648281 ( reposiTUm)

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Ceric, H., Orio, R., Cervenka, J., & Selberherr, S. (2008). TCAD Solutions for Submicron Copper Interconnect. In Proceedings 15#^{th} International Symposium on the Physical and Failure Analysis of Integrated Circuits (pp. 78–81). http://hdl.handle.net/20.500.12708/70253 ( reposiTUm)

Ceric, H., Lacerda de Orio, R., & Selberherr, S. (2008). Comprehensive modeling of electromigration induced interconnect degradation mechanisms. In 2008 26th International Conference on Microelectronics. International Conference on Microelectronics (MIEL), Beograd, Non-EU. https://doi.org/10.1109/icmel.2008.4559225 ( reposiTUm)

Hollauer, C., Ceric, H., van Barel, G., Witvrouw, A., & Selberherr, S. (2007). Investigation of Intrinsic Stress Effects in Cantilever Structures. In Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems (CD ROM) (p. 4). http://hdl.handle.net/20.500.12708/69558 ( reposiTUm)

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Ceric, H., Nentchev, A., Langer, E., & Selberherr, S. (2007). Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 37–40). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_9 ( reposiTUm)

Ceric, H., & Selberherr, S. (2007). Electromigration in Interconnect Structures of Microelectronic Circuits. In Microelectronics, Electronics, and Electronic Technologies (MEET) (pp. 23–28). http://hdl.handle.net/20.500.12708/69827 ( reposiTUm)

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Cervenka, J., Ceric, H., Ertl, O., & Selberherr, S. (2007). Three-Dimensional Sacrificial Etching. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 433–436). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_105 ( reposiTUm)

Orio, R., Ceric, H., & Selberherr, S. (2007). Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 62–63). http://hdl.handle.net/20.500.12708/69804 ( reposiTUm)

Cervenka, J., Ceric, H., & Selberherr, S. (2007). Three-Dimensional Simulation of Sacrificial Etching. In T. Becker, C. Cané, & N. S. Barker (Eds.), Smart Sensors, Actuators, and MEMS III (pp. 452–460). SPIE. https://doi.org/10.1117/12.721979 ( reposiTUm)

Ceric, H., Langer, E., & Selberherr, S. (2007). Modeling of Residual Stresses in Thin Metal Films. In 9#^{th} International Workshop on Stress-Induced Phenomena in Metallization (p. 18). http://hdl.handle.net/20.500.12708/70078 ( reposiTUm)

Ceric, H., Langer, E., & Selberherr, S. (2007). Three-Phase Model for the Volmer-Weber Crystal Growth. In Nanostructures and Carrier Interactions (p. 127). http://hdl.handle.net/20.500.12708/70077 ( reposiTUm)

Ceric, H., Hollauer, C., & Selberherr, S. (2006). Simulation of Texture Development Caused Stress Build-Up in Electroplated Copper Lines. In Proceedings 13#^{th} International Symposium on the Physical and Failure Analysis of Integrated Circuits (pp. 359–363). http://hdl.handle.net/20.500.12708/69128 ( reposiTUm)

Wittmann, R., Puchner, H., Ceric, H., & Selberherr, S. (2006). Impact of Random Bit Values on NBTI Lifetime of an SRAM Cell. In Proceedings 13#^{th} International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (pp. 41–44). http://hdl.handle.net/20.500.12708/69130 ( reposiTUm)

Holzer, S., Hollauer, C., Ceric, H., Karner, M., Grasser, T., Langer, E., & Selberherr, S. (2006). Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress. In Proceedings 13#^{th} International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (pp. 154–157). http://hdl.handle.net/20.500.12708/69129 ( reposiTUm)

Ceric, H., Hollauer, C., & Selberherr, S. (2006). Three-Dimensional Simulation of Intrinsic Stress Build-Up in Thin Films. In 2006 International Conference on Simulation of Semiconductor Processes and Devices. 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, California, United States of America (the). IEEE. https://doi.org/10.1109/sispad.2006.282869 ( reposiTUm)

Hollauer, C., Ceric, H., & Selberherr, S. (2006). Modeling of Intrinsic Stress Effects in Deposited Thin Films. In Eurosensors 20#^{th} Anniversary Vol. 1 (pp. 324–325). http://hdl.handle.net/20.500.12708/69244 ( reposiTUm)

Ceric, H., Cervenka, J., Langer, E., & Selberherr, S. (2006). Moving Boundary Applications in Process and Interconnect TCAD. In Proceedings Mini-Workshop on Anisotropic Motion Laws (pp. 13–16). http://hdl.handle.net/20.500.12708/69233 ( reposiTUm)

Movahhedi, M., Nentchev, A., Ceric, H., Abdipour, A., & Selberherr, S. (2006). A Finite Element Time-Domain Algorithm Based on the Alternating-Direction Implicit Method. In European Microwave Week 2006 Book of Abstracts (pp. 1–4). http://hdl.handle.net/20.500.12708/69243 ( reposiTUm)

Holzer, S., Hollauer, C., Ceric, H., Wagner, S., Entner, R., Langer, E., Grasser, T., & Selberherr, S. (2005). Three-Dimensional Transient Electro-Thermal Interconnect Simulation for Stress and Electromigration Analysis. In NSTI Nanotech Technical Proceedings (pp. 620–623). http://hdl.handle.net/20.500.12708/68483 ( reposiTUm)

Wittmann, R., Puchner, H., Hinh, L., Ceric, H., Gehring, A., & Selberherr, S. (2005). Simulation of Dynamic NBTI Degradation for a 90 nm CMOS Technology. In NSTI Nanotech Technical Proceedings (pp. 29–32). http://hdl.handle.net/20.500.12708/68488 ( reposiTUm)

Wittmann, R., Puchner, H., Hinh, L., Ceric, H., Gehring, A., & Selberherr, S. (2005). Impact of NBTI-driven Parameter Degradation on Lifetime of a 90nm p-MOSFET. In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 99–102). http://hdl.handle.net/20.500.12708/68996 ( reposiTUm)

Hollauer, C., Ceric, H., & Selberherr, S. (2005). Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress. In 208#^{th} ECS Meeting (p. 1). http://hdl.handle.net/20.500.12708/68909 ( reposiTUm)

Ceric, H., Hollauer, C., & Selberherr, S. (2005). Microstructure and Stress Aspects of Electromigration Modeling. In 8#^{th} International Workshop on Stress-Induced Phenomena in Metallization (p. P 17). http://hdl.handle.net/20.500.12708/68911 ( reposiTUm)

Ceric, H., Deshpande, V., Hollauer, C., Holzer, S., Grasser, T., & Selberherr, S. (2005). Comprehensive Analysis of Vacancy Dynamics Due to Electromigration. In Proceedings of the 12#^{th} International Symposium on the Physical & Failure Analysis of Integrated Circuits (pp. 100–103). http://hdl.handle.net/20.500.12708/68912 ( reposiTUm)

Hollauer, C., Holzer, S., Ceric, H., Wagner, S., Grasser, T., & Selberherr, S. (2005). Investigation of Thermo-Mechanical Stress in Modern Interconnect Layouts. In Proceedings of The Sixth International Congress on Thermal Stresses (pp. 637–640). Schriftenreihe der Technischen Universität Wien. http://hdl.handle.net/20.500.12708/68513 ( reposiTUm)

Hollauer, Ch., Ceric, H., & Selberherr, S. (2005). Three-Dimensional Simulation of Stress Dependent Thermal Oxidation. In 2005 International Conference On Simulation of Semiconductor Processes and Devices. 2005 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. IEEE. https://doi.org/10.1109/sispad.2005.201503 ( reposiTUm)

Wessner, W., Ceric, H., Cervenka, J., & Selberherr, S. (2005). Dynamic Mesh Adaptation for Three-Dimensional Electromigration Simulation. In 2005 International Conference On Simulation of Semiconductor Processes and Devices. 2005 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. IEEE. https://doi.org/10.1109/sispad.2005.201494 ( reposiTUm)

Holzer, S., Hollauer, C., Ceric, H., Wagner, S., Langer, E., Grasser, T., & Selberherr, S. (2005). Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress. In J. Lopez, F. V. Fernandez, J. M. Lopez-Villegas, & J. M. de la Rosa (Eds.), VLSI Circuits and Systems II (pp. 380–387). SPIE. https://doi.org/10.1117/12.608414 ( reposiTUm)

Ceric, H., Zahedmanesh, H., Lacerda de Orio, R., & Selberherr, S. (2021). Models and Techniques for Reliability Studies of Nano-Scaled Interconnects. In S. Y. Yurish (Ed.), Advances in Measurements and Instrumentation: Reviews (pp. 93–111). International Frequency Sensor Association (IFSA) Publishing. http://hdl.handle.net/20.500.12708/30561 ( reposiTUm)

Ceric, H., Heinzl, R., Hollauer, C., Grasser, T., & Selberherr, S. (2006). Microstructure and Stress Aspects of Electromigration Modeling. In Stress-Induced Phenomena in Metallization (pp. 262–268). American Institute of Physics. http://hdl.handle.net/20.500.12708/25011 ( reposiTUm)

Hollauer, C., Ceric, H., & Selberherr, S. (2005). Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress. In ECS Meeting Abstracts (pp. 734–734). ECS Transactions. https://doi.org/10.1149/ma2005-02/19/734 ( reposiTUm)

Ceric, H., Zahedmanesh, H., & Croes, K. (2019). Analysis of Electromigration Failure of Nano-Interconnects through a Combination of Modeling and Experimental Methods. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, Netherlands (the). http://hdl.handle.net/20.500.12708/91221 ( reposiTUm)

Singulani, A. P., Ceric, H., & Selberherr, S. (2013). Stress Evolution in the Metal Layers of TSVs with Bosch Scallops. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/90205 ( reposiTUm)

Orio, R., Ceric, H., & Selberherr, S. (2011). A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects. 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France, EU. http://hdl.handle.net/20.500.12708/89571 ( reposiTUm)

Rupp, K., & Ceric, H. (2010). Analytical and Numerical Investigation of the Segregation Problem. 4#^{th} International Conference Computational Methods in Applied Mathematics: CMAM-4, Bedlewo, EU. http://hdl.handle.net/20.500.12708/89268 ( reposiTUm)

Cervenka, J., Ceric, H., & Selberherr, S. (2007). Three-Dimensional Simulation of Sacrificial Etching. SPIE Smart Sensors, Actuators, and MEMS, Masapalomas, Spain, EU. http://hdl.handle.net/20.500.12708/88615 ( reposiTUm)

Wessner, W., Ceric, H., Hollauer, C., Langer, E., & Selberherr, S. (2005). Electromigration Reliability TCAD Solutions. SEMICON Europa2005, München, Austria. http://hdl.handle.net/20.500.12708/88274 ( reposiTUm)

Holzer, S., Hollauer, C., Ceric, H., Wagner, S., Langer, E., Grasser, T., & Selberherr, S. (2005). Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress. SPIE VLSI Circuits and Systems, Sevilla, Spain, Austria. http://hdl.handle.net/20.500.12708/88317 ( reposiTUm)

Ceric, H., & Selberherr, S. (2002). Simulative Prediction of the Resistance Change due to Electromigration Induced Void Evolution. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/87973 ( reposiTUm)

Ceric, H., Hehenberger, P. P., Milovanovic, G., Sverdlov, V., Vasicek, M., & Selberherr, S. (2009). VISTA Status Report June 2009. http://hdl.handle.net/20.500.12708/35720 ( reposiTUm)

Ceric, H., Grasser, T., Orio, R., Pourfath, M., Vasicek, M., & Selberherr, S. (2008). VISTA Status Report July 2008. http://hdl.handle.net/20.500.12708/34954 ( reposiTUm)

Ceric, H., Dhar, S., Karlowatz, G., Li, L., Pourfath, M., & Selberherr, S. (2007). VISTA Status Report June 2007. http://hdl.handle.net/20.500.12708/31398 ( reposiTUm)

Ceric, H., Karner, M., Nentchev, A., Schwaha, P., Ungersböck, S. E., & Selberherr, S. (2005). VISTA Status Report December 2005. http://hdl.handle.net/20.500.12708/31424 ( reposiTUm)

Ceric, H., Holzer, S., Sheikholeslami, A., Ayalew, T., Wittmann, R., & Selberherr, S. (2004). VISTA Status Report June 2004. http://hdl.handle.net/20.500.12708/31425 ( reposiTUm)

Ceric, H., Dragosits, K., Gehring, A., Smirnov, S., Palankovski, V., & Selberherr, S. (2002). VISTA Status Report December 2002. http://hdl.handle.net/20.500.12708/31430 ( reposiTUm)

Ceric, H. (2014). Reliability of interconnect structures for modern integrated circuits [Professorial Dissertation, Technische Universität Wien]. reposiTUm. http://hdl.handle.net/20.500.12708/158745 ( reposiTUm)

Ceric, H. (2000). Analytical modeling of WDM LAN medium access protocols by means of semi-markov processes [Diploma Thesis, Technische Universität Wien]. reposiTUm. http://hdl.handle.net/20.500.12708/178185 ( reposiTUm)