Wissenschaftliche Artikel

Bendra, M., Lacerda de Orio, R., Selberherr, S., Wolfgang Goes, & Sverdlov, V. (2025). A multi-level cell for ultra-scaled STT-MRAM realized by back-hopping. Solid-State Electronics, 223, Article 109027. https://doi.org/10.1016/j.sse.2024.109027 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2024). Electron and Spin Transport in Semiconductor and Magnetoresistive Devices. Solid-State Electronics, 218, Article 108962. https://doi.org/10.1016/j.sse.2024.108962 ( reposiTUm)

Bendra, M., Lacerda de Orio, R., Selberherr, S., Goes, W., & Sverdlov, V. (2024). Advanced modeling and simulation of multilayer spin–transfer torque magnetoresistive random access memory with interface exchange coupling. Micromachines, 15(5), Article 568. https://doi.org/10.3390/mi15050568 ( reposiTUm)

Pruckner, B., Fiorentini, S., Goes, W., Selberherr, S., & Sverdlov, V. (2024). Micromagnetic modeling of double spin-torque magnetic tunnel junction devices. PHYSICA B-CONDENSED MATTER, 688, Article 416124. https://doi.org/10.1016/j.physb.2024.416124 ( reposiTUm)

Antonov, V. A., Tikhonenko, F. V., Popov, V. P., Miakonkikh, A. V., Rudenko, K. V., & Sverdlov, V. (2024). SOS pseudo-FeFETs after Furnace or rapid annealings and thinning by thermal Oxidation. Solid-State Electronics, 215, 1–6. https://doi.org/10.1016/j.sse.2023.108821 ( reposiTUm)

Jorstad, N. P., Fiorentini, S., Ender, J., Wolfgang Goes, Selberherr, S., & Sverdlov, V. (2024). Micromagnetic modeling of SOT-MRAM dynamics. PHYSICA B-CONDENSED MATTER, 676, Article 415612. https://doi.org/10.1016/j.physb.2023.415612 ( reposiTUm)

Hadamek, T., Jorstad, N. P., Goes, W., Selberherr, S., & Sverdlov, V. (2024). Numerical study of two-terminal SOT-MRAM. Physica B: Condensed Matter, 673, 1–6. https://doi.org/10.1016/j.physb.2023.415362 ( reposiTUm)

Illarionov, Yu. Yu., Knobloch, T., Uzlu, B., Banshchikov, A., Ivanov, I. A., Sverdlov, V., Otto, M., Stoll, S. L., Vexler, M., Waltl, M., Wang, Z., Manna, B., Neumaier, D., Lemme, M., Sokolov, N. S., & Grasser, T. (2024). Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF₂ insulators. Npj 2D Materials and Applications, 8(1), 1–10. https://doi.org/10.1038/s41699-024-00461-0 ( reposiTUm)

Sverdlov, V., & Choi, S.-B. (2023). Editorial for the special issue on magnetic and spin devices, volume II. Micromachines, 14(11), Article 2131. https://doi.org/10.3390/mi14112131 ( reposiTUm)

Bendra, M., Fiorentini, S., Selberherr, S., Gös, W., & Sverdlov, V. (2023). A multi-level cell for ultra-scaled STT-MRAM realized by back-hopping. Solid-State Electronics, 208, Article 108738. https://doi.org/10.1016/j.sse.2023.108738 ( reposiTUm)

Fiorentini, S., Ender, J., Selberherr, S., Lacerda de Orio, R., Goes, W., & Sverdlov, V. (2023). Comprehensive evaluation of torques in ultra-scaled MRAM devices. Solid-State Electronics, 199, Article 108491. https://doi.org/10.1016/j.sse.2022.108491 ( reposiTUm)

Bendra, M., Fiorentini, S., Goes, W., Selberherr, S., & Sverdlov, V. (2023). The Influence of Interface Effects on the Switching Behavior in Ultra-Scaled MRAM Cells. Solid-State Electronics, 201, Article 108590. https://doi.org/10.1016/j.sse.2023.108590 ( reposiTUm)

Hadamek, T., Selberherr, S., Wolfgang Goes, & Sverdlov, V. (2023). Modeling Thermal Effects in STT-MRAM. Solid-State Electronics, 200, Article 108522. https://doi.org/10.1016/j.sse.2022.108522 ( reposiTUm)

Hadamek, T., Jorstad, N. P., Lacerda de Orio, R., Goes, W., Selberherr, S., & Sverdlov, V. (2023). A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices. Micromachines, 14(8), 1–14. https://doi.org/10.3390/mi14081581 ( reposiTUm)

Fiorentini, S., Pruckner, B., Goes, W., Selberherr, S., & Sverdlov, V. (2023). Accurate Torque Evaluation in Elongated Ultra-Scaled STT-MRAM Devices. ECS Transactions, 111(1), 181–186. https://doi.org/10.1149/11101.0181ecst ( reposiTUm)

Selberherr, S., & Sverdlov, V. (2022). About electron transport and spin control in semiconductor devices. Solid-State Electronics, 197, Article 108443. https://doi.org/10.1016/j.sse.2022.108443 ( reposiTUm)

Ender, J., Lacerda de Orio, R., Fiorentini, S., Selberherr, S., Goes, W., & Sverdlov, V. (2022). Reinforcement learning to reduce failures in SOT-MRAM switching. Microelectronics Reliability, 135(114570), 114570. https://doi.org/10.1016/j.microrel.2022.114570 ( reposiTUm)

Hadámek, T., Fiorentini, S., Bendra, M., Ender, J., de Orio, R. L., Goes, W., Selberherr, S., & Sverdlov, V. (2022). Temperature Increase in STT-MRAM at Writing: A Fully Three-Dimensional Finite Element Approach. Solid-State Electronics, 193(108269), 108269. https://doi.org/10.1016/j.sse.2022.108269 ( reposiTUm)

Sverdlov, V., & Jutong, N. (2022). Editorial for the Special Issue on Magnetic and Spin Devices. Micromachines, 13(4), 493. https://doi.org/10.3390/mi13040493 ( reposiTUm)

Sverdlov, V., Seiler, H., El-Sayed, A.-M. B., Illarionov, Y., & Kosina, H. (2022). Edge Modes and Their Conductance in Narrow Nanoribbons of 2D Materials in a Topological Phase. Solid-State Electronics, 193(108266), 108266. https://doi.org/10.1016/j.sse.2022.108266 ( reposiTUm)

Loch, W. J., Fiorentini, S., Jørstad, N. P., Goes, W., Selberherr, S., & Sverdlov, V. (2022). Double Reference Layer STT-MRAM Structures with Improved Performance. Solid-State Electronics, 194(108335), Article 108335. https://doi.org/10.1016/j.sse.2022.108335 ( reposiTUm)

Jørstad, N. P., Fiorentini, S., Loch, W. J., Goes, W., Selberherr, S., & Sverdlov, V. (2022). Finite Element Modeling of Spin-Orbit Torques. Solid-State Electronics, 194, Article 108323. https://doi.org/10.1016/j.sse.2022.108323 ( reposiTUm)

Fiorentini, S., Lacerda de Orio, R., Ender, J., Selberherr, S., Bendra, M., Jorstad, N. P., Goes, W., & Sverdlov, V. (2022). Finite Element Method for MRAM Switching Simulations. WSEAS Transactions on Systems and Controls, 17, 585–588. https://doi.org/10.37394/23203.2022.17.64 ( reposiTUm)

Fiorentini, S., Bendra, M., Ender, J., Lacerda de Orio, R., Goes, W., Selberherr, S., & Sverdlov, V. (2022). Spin and charge drift-diffusion in ultra-scaled MRAM cells. Scientific Reports, 12, Article 20958. https://doi.org/10.1038/s41598-022-25586-4 ( reposiTUm)

Fiorentini, S., Ender, J., Selberherr, S., Goes, W., & Sverdlov, V. (2022). Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach. Journal on Systemics, Cybernetics and Informatics, 20(4), 40–44. https://doi.org/10.54808/JSCI.20.04.40 ( reposiTUm)

Bendra, M., Fiorentini, S., Goes, W., Selberherr, S., & Sverdlov, V. (2022). The influence of interface effects on the switching behavior in ultra-scaled MRAM cells. Solid-State Electronics, 201, Article 108590. https://doi.org/10.1016/j.sse.2023.108590 ( reposiTUm)

Ender, J., Fiorentini, S., De Orio, R. L., Goes, W., Sverdlov, V., & Selberherr, S. (2021). Emerging CMOS Compatible Magnetic Memories and Logic. IEEE Journal of the Electron Devices Society, 9, 456–463. https://doi.org/10.1109/jeds.2021.3066679 ( reposiTUm)

Fiorentini, S., Ender, J., Selberherr, S., de Orio, R. L., Goes, W., & Sverdlov, V. (2021). Coupled Spin and Charge Drift-Diffusion Approach Applied to Magnetic Tunnel Junctions. Solid-State Electronics, 186(108103), 108103. https://doi.org/10.1016/j.sse.2021.108103 ( reposiTUm)

de Orio, R. L., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., & Sverdlov, V. (2021). Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning. Micromachines, 12(4), 443. https://doi.org/10.3390/mi12040443 ( reposiTUm)

de Orio, R. L., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., & Sverdlov, V. (2021). Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell. IEEE Journal of the Electron Devices Society, 9, 61–67. https://doi.org/10.1109/jeds.2020.3039544 ( reposiTUm)

de Orio, R. L., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., & Sverdlov, V. (2021). Two-Pulse Switching Scheme and Reinforcement Learning for Energy Efficient SOT-MRAM Simulations. Solid-State Electronics, 185(108075), 108075. https://doi.org/10.1016/j.sse.2021.108075 ( reposiTUm)

Sverdlov, V., El-Sayed, A.-M. B., Seiler, H., Kosina, H., & Selberherr, S. (2021). Subbands in a Nanoribbon of Topologically Insulating MoS₂ in the 1T′ Phase. Solid-State Electronics, 184(108081), 108081. https://doi.org/10.1016/j.sse.2021.108081 ( reposiTUm)

Ender, J., Lacerda de Orio, R., Fiorentini, S., Selberherr, S., Goes, W., & Sverdlov, V. (2021). Improving failure rates in pulsed SOT-MRAM switching by reinforcement learning. Microelectronics Reliability, 126, 1–5. https://doi.org/10.1016/j.microrel.2021.114231 ( reposiTUm)

de Orio, R. L., Makarov, A., Goes, W., Ender, J., Fiorentini, S., & Sverdlov, V. (2020). Two-Pulse Magnetic Field-Free Switching Scheme for Perpendicular SOT-MRAM with a Symmetric Square Free Layer. Physica B: Condensed Matter, 578(411743), 411743. https://doi.org/10.1016/j.physb.2019.411743 ( reposiTUm)

de Orio, R. L., Makarov, A., Selberherr, S., Goes, W., Ender, J., Fiorentini, S., & Sverdlov, V. (2020). Robust Magnetic Field-Free Switching of a Perpendicularly Magnetized Free Layer for SOT-MRAM. Solid-State Electronics, 168(107730), 107730. https://doi.org/10.1016/j.sse.2019.107730 ( reposiTUm)

Sverdlov, V., El-Sayed, E. A.-M., Kosina, H., & Selberherr, S. (2020). Ballistic Conductance in a Topological 1T ’-MoS₂ Nanoribbon. Semiconductors, 54(12), 1713–1715. https://doi.org/10.1134/s1063782620120386 ( reposiTUm)

Fiorentini, S., de Orio, R. L., Selberherr, S., Ender, J., Goes, W., & Sverdlov, V. (2020). Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM. IEEE Journal of the Electron Devices Society, 8, 1249–1256. https://doi.org/10.1109/jeds.2020.3023577 ( reposiTUm)

Sverdlov, V., El-Sayed, A.-M. B., Kosina, H., & Selberherr, S. (2020). Conductance in a Nanoribbon of Topologically Insulating MoS₂ in the 1T’ Phase. IEEE Transactions on Electron Devices, 67(11), 4687–4690. https://doi.org/10.1109/ted.2020.3023921 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2019). Current and Shot Noise at Spin-Dependent Hopping through Junctions with Ferromagnetic Contacts. Solid-State Electronics, 159, 43–50. https://doi.org/10.1016/j.sse.2019.03.053 ( reposiTUm)

Sverdlov, V., Makarov, A., & Selberherr, S. (2019). Two-Pulse Sub-ns Switching Scheme for Advanced Spin-Orbit Torque MRAM. Solid-State Electronics, 155, 49–56. https://doi.org/10.1016/j.sse.2019.03.010 ( reposiTUm)

Ghosh, J., Osintsev, D., & Sverdlov, V. (2019). Efficient Two-Level Parallelization Approach to Evaluate Spin Relaxation in a Strained Thin Silicon fFilm. Journal of Computational Electronics, 18(1), 28–36. https://doi.org/10.1007/s10825-018-1274-x ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2018). Demands For Spin-based Nonvolatility In Emerging Digital Logic And Memory Devices For Low Power Computing. Facta Universitatis. Series Electronics and Energetics, 31(4), 529–545. https://doi.org/10.2298/fuee1804529s ( reposiTUm)

Sverdlov, V., Makarov, A., & Selberherr, S. (2018). Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell without External Magnetic Field. Journal on Systemics, Cybernetics and Informatics, 16(2), 55–59. http://hdl.handle.net/20.500.12708/144476 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2017). Editorial: Special Issue of Solid-State Electronics, dedicated to EUROSOI-ULIS 2016. Solid-State Electronics, 128, 1–2. https://doi.org/10.1016/j.sse.2016.10.015 ( reposiTUm)

Sverdlov, V., Weinbub, J., & Selberherr, S. (2017). Spintronics as a Non-Volatile Complement to Modern Microelectronics. Informacije Midem - Journal of Microelectronics Electronic Components and Materials, 47(4), 195–210. http://hdl.handle.net/20.500.12708/147561 ( reposiTUm)

Makarov, A., Windbacher, T., Sverdlov, V., & Selberherr, S. (2016). CMOS-Compatible Spintronic Devices: A Review. Semiconductor Science and Technology, 31(11), 113006. https://doi.org/10.1088/0268-1242/31/11/113006 ( reposiTUm)

Ghosh, J., Osintsev, D., Sverdlov, V., & Selberherr, S. (2016). Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stress. Journal of Nano Research, 39, 34–42. https://doi.org/10.4028/www.scientific.net/jnanor.39.34 ( reposiTUm)

Windbacher, T., Makarov, A., Sverdlov, V., & Selberherr, S. (2015). Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop. Solid-State Electronics, 108, 2–7. https://doi.org/10.1016/j.sse.2014.12.023 ( reposiTUm)

Windbacher, T., Ghosh, J., Makarov, A., Sverdlov, V., & Selberherr, S. (2015). Modelling of Multipurpose Spintronic Devices. International Journal of Nanotechnology, 12(3/4), 313. https://doi.org/10.1504/ijnt.2015.067215 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2015). Silicon Spintronics: Progress and Challenges. Physics Reports, 585, 1–40. https://doi.org/10.1016/j.physrep.2015.05.002 ( reposiTUm)

Osintsev, D., Sverdlov, V., & Selberherr, S. (2015). Electron Mobility and Spin Lifetime Enhancement in Strained Ultra-Thin Silicon Films. Solid-State Electronics, 112, 46–50. https://doi.org/10.1016/j.sse.2015.02.007 ( reposiTUm)

Ghosh, J., Osintsev, D., Sverdlov, V., & Selberherr, S. (2015). Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures. Microelectronic Engineering, 147, 89–91. https://doi.org/10.1016/j.mee.2015.04.072 ( reposiTUm)

Mahmoudi, H., Windbacher, T., Sverdlov, V., & Selberherr, S. (2014). Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates. Advanced Materials Research, 854, 89–95. https://doi.org/10.4028/www.scientific.net/amr.854.89 ( reposiTUm)

Ghosh, J., Sverdlov, V., Windbacher, T., & Selberherr, S. (2014). Spin injection and diffusion in silicon based devices from a space charge layer. Journal of Applied Physics, 115(17), 17C503. https://doi.org/10.1063/1.4856056 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2014). Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer. International Journal of High Speed Electronics and Systems, 23(03n04), 1450014. https://doi.org/10.1142/s0129156414500141 ( reposiTUm)

Ghosh, J., Windbacher, T., Sverdlov, V., & Selberherr, S. (2014). Spin Injection in a Semiconductor Through a Space-Charge Layer. Solid-State Electronics, 101, 116–121. https://doi.org/10.1016/j.sse.2014.06.035 ( reposiTUm)

Windbacher, T., Makarov, A., Mahmoudi, H., Sverdlov, V., & Selberherr, S. (2014). Novel Bias-Field-Free Spin Transfer Oscillator. Journal of Applied Physics, 115(17), 17C901. https://doi.org/10.1063/1.4862936 ( reposiTUm)

Osintsev, D., Sverdlov, V., & Selberherr, S. (2014). Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films. Advanced Materials Research, 854, 29–34. https://doi.org/10.4028/www.scientific.net/amr.854.29 ( reposiTUm)

Windbacher, T., Mahmoudi, H., Makarov, A., Sverdlov, V., & Selberherr, S. (2013). Multiple Purpose Spin Transfer Torque Operated Devices. Facta Universitatis - Series: Electronics and Energetics, 26(3), 227–238. https://doi.org/10.2298/fuee1303227w ( reposiTUm)

Mahmoudi, H., Windbacher, T., Sverdlov, V., & Selberherr, S. (2013). Reliability Analysis and Comparison of Implication and Reprogrammable Logic Gates in Magnetic Tunnel Junction Logic Circuits. IEEE Transactions on Magnetics, 49(12), 5620–5628. https://doi.org/10.1109/tmag.2013.2278683 ( reposiTUm)

Mahmoudi, H., Windbacher, T., Sverdlov, V., & Selberherr, S. (2013). Implication Logic Gates Using Spin-Transfer-Torque-Operated Magnetic Tunnel Junctions for Intrinsic Logic-In-Memory. Solid-State Electronics, 84, 191–197. https://doi.org/10.1016/j.sse.2013.02.017 ( reposiTUm)

Mahmoudi, H., Sverdlov, V., & Selberherr, S. (2013). Influence of Geometry on the Memristive Behavior of Domain Wall Spintronic Memristors and its Applications for Measurement. Journal of Superconductivity and Novel Magnetism, 26(5), 1745–1748. https://doi.org/10.1007/s10948-012-2034-y ( reposiTUm)

Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., & Selberherr, S. (2013). Subband Splitting and Surface Roughness Induced Spin Relaxation in (001) Silicon SOI MOSFETs. Solid-State Electronics, 90, 34–38. https://doi.org/10.1016/j.sse.2013.02.055 ( reposiTUm)

Osintsev, D., Sverdlov, V., Makarov, A., & Selberherr, S. (2013). Current and Conductance Modulation at Elevated Temperature in Silicon and InAs-based Spin Field-Effect Transistors. SAINS MALAYSIANA, 42(2), 205–211. http://hdl.handle.net/20.500.12708/154721 ( reposiTUm)

Windbacher, T., Triebl, O., Osintsev, D., Makarov, A., Sverdlov, V., & Selberherr, S. (2013). Simulation Study of an Electrically Read- and Writable Magnetic Logic Gate. Microelectronic Engineering, 112, 188–192. https://doi.org/10.1016/j.mee.2012.12.030 ( reposiTUm)

Schanovsky, F., Baumgartner, O., Sverdlov, V., & Grasser, T. (2012). A Multi Scale Modeling Approach to Non-Radiative Multi Phonon Transitions at Oxide Defects in MOS Structures. Journal of Computational Electronics, 11(3), 218–224. https://doi.org/10.1007/s10825-012-0403-1 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2012). Emerging Memory Technologies: Trends, Challenges, and Modeling Methods. Microelectronics Reliability, 52(4), 628–634. https://doi.org/10.1016/j.microrel.2011.10.020 ( reposiTUm)

Stanojević, Z., Sverdlov, V., Baumgartner, O., & Kosina, H. (2012). Subband Engineering in N-Type Silicon Nanowires using Strain and Confinement. Solid-State Electronics, 70, 73–80. https://doi.org/10.1016/j.sse.2011.11.022 ( reposiTUm)

Osintsev, D., Sverdlov, V., Stanojević, Z., Makarov, A., & Selberherr, S. (2012). Temperature Dependence of the Transport Properties of Spin Field-Effect Transistors Built with InAs and Si Channels. Solid-State Electronics, 71, 25–29. https://doi.org/10.1016/j.sse.2011.10.015 ( reposiTUm)

Makarov, A., Sverdlov, V., Osintsev, D., & Selberherr, S. (2012). Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic Modeling. IEEE Transactions on Magnetics, 48(4), 1289–1292. https://doi.org/10.1109/tmag.2011.2173565 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2011). Stochastic Model of the Resistive Switching Mechanism in Bipolar Resistive Random Access Memory: Monte Carlo Simulations. Journal of Vacuum Science & Technology B, 29(1), 01AD03. https://doi.org/10.1116/1.3521503 ( reposiTUm)

Baumgartner, O., Sverdlov, V., Windbacher, T., & Selberherr, S. (2011). Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Thin Films. IEEE Transactions on Nanotechnology, 10(4), 737–743. https://doi.org/10.1109/tnano.2010.2074211 ( reposiTUm)

Makarov, A., Sverdlov, V., Osintsev, D., & Selberherr, S. (2011). Reduction of Switching Time in Pentalayer Magnetic Tunnel Junctions with a Composite-Free Layer. Physica Status Solidi (RRL) - Rapid Research Letters, 5(12), 420–422. http://hdl.handle.net/20.500.12708/162501 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2010). Stochastic Modeling of Bipolar Resistive Switching in Metal-Oxide based Memory by Monte Carlo Technique. Journal of Computational Electronics, 9(3–4), 146–152. https://doi.org/10.1007/s10825-010-0317-8 ( reposiTUm)

Baumgartner, O., Karner, M., Sverdlov, V., & Kosina, H. (2010). Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 2 Efficient Self-Consistent Numerical Solution of the k.p Schrödinger Equation. Solid-State Electronics, 54(2), 143–148. https://doi.org/10.1016/j.sse.2009.12.010 ( reposiTUm)

Windbacher, T., Sverdlov, V., Baumgartner, O., & Selberherr, S. (2010). Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 1 Analytical Consideration and Strain-Induced Valley Splitting. Solid-State Electronics, 54(2), 137–142. https://doi.org/10.1016/j.sse.2009.12.008 ( reposiTUm)

Sverdlov, V., Baumgartner, O., Windbacher, T., & Selberherr, S. (2009). Modeling of Modern MOSFETs with Strain. Journal of Computational Electronics, 8(3–4), 192–208. https://doi.org/10.1007/s10825-009-0291-1 ( reposiTUm)

Sverdlov, V. A., Windbacher, T., Schanovsky, F., & Selberherr, S. (2009). Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress. Journal of Integrated Circuits and Systems, 4(2), 55–60. https://doi.org/10.29292/jics.v4i2.298 ( reposiTUm)

Tyaginov, S., Sverdlov, V., Starkov, I., Gös, W., & Grasser, T. (2009). Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate. Microelectronics Reliability, 49(9–11), 998–1002. https://doi.org/10.1016/j.microrel.2009.06.018 ( reposiTUm)

Goes, W., Karner, M., Sverdlov, V., & Grasser, T. (2008). Charging and Discharging of Oxide Defects in Reliability Issues. IEEE Transactions on Device and Materials Reliability, 8(3), 491–500. https://doi.org/10.1109/tdmr.2008.2005247 ( reposiTUm)

Sverdlov, V., Karlowatz, G., Dhar, S., Kosina, H., & Selberherr, S. (2008). Two-Band k.p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility. Solid-State Electronics, 52(10), 1563–1568. https://doi.org/10.1016/j.sse.2008.06.019 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2008). Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond. Solid-State Electronics, 52(12), 1861–1866. https://doi.org/10.1016/j.sse.2008.06.054 ( reposiTUm)

Sverdlov, V., Ungersboeck, E., Kosina, H., & Selberherr, S. (2008). Current Transport Models for Nanoscale Semiconductor Devices. Materials Science and Engineering: R: Reports, 58(6), 228–270. https://doi.org/10.1016/j.mser.2007.11.001 ( reposiTUm)

Sverdlov, V., Kosina, H., & Selberherr, S. (2008). Electron Subband Dispersions in Ultra-Thin Silicon Films from a Two-Band k·p Theory. Journal of Computational Electronics, 7(3), 164–167. https://doi.org/10.1007/s10825-008-0177-7 ( reposiTUm)

Sverdlov, V., Ungersboeck, E., Kosina, H., & Selberherr, S. (2007). Volume Inversion Mobility in SOI MOSFETs for Different Thin Body Orientations. Solid-State Electronics, 51(2), 299–305. https://doi.org/10.1016/j.sse.2007.01.022 ( reposiTUm)

Sverdlov, V., Ungersboeck, S. E., & Kosina, H. (2007). Theoretical Electron Mobility Analysis in Thin-Body FETs: Dependence on Substrate Orientation and Biaxial Strain. IEEE Transactions on Nanotechnology, 6(3), 334–340. https://doi.org/10.1109/tnano.2007.894835 ( reposiTUm)

Ungersboeck, E., Dhar, S., Karlowatz, G., Sverdlov, V., Kosina, H., & Selberherr, S. (2007). The Effect of General Strain on the Band Structure and Electron Mobility of Silicon. IEEE Transactions on Electron Devices, 54(9), 2183–2190. https://doi.org/10.1109/ted.2007.902880 ( reposiTUm)

Kinkhabwala, Y., Sverdlov, V., Korotkov, A. N., & Likharev, K. (2006). A Numerical Study of Transport and Shot Noise in 2D Hopping. Journal of Physics: Condensed Matter, 18, 1999–2012. http://hdl.handle.net/20.500.12708/171650 ( reposiTUm)

Kinkhabwala, Y., Sverdlov, V., & Likharev, K. (2006). A Numerical Study of Coulomb Interaction Effects on 2D Hopping Transport. Journal of Physics: Condensed Matter, 18, 2013–2027. http://hdl.handle.net/20.500.12708/171651 ( reposiTUm)

Sverdlov, V., Kosina, H., & Selberherr, S. (2006). Modeling Current Transport in Ultra-Scaled Field-Effect Transistors. Microelectronics Reliability, 47(1), 11–19. https://doi.org/10.1016/j.microrel.2006.03.009 ( reposiTUm)

Sverdlov, V., Grasser, T., Kosina, H., & Selberherr, S. (2006). Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices. Journal of Computational Electronics, 5(4), 447–450. https://doi.org/10.1007/s10825-006-0041-6 ( reposiTUm)

Sverdlov, V., Gehring, A., Kosina, H., & Selberherr, S. (2005). Quantum Transport in Ultra-Scaled Double-Gate MOSFETs: A Wigner Function-Based Monte Carlo Approach. Solid-State Electronics, 49(9), 1510–1515. https://doi.org/10.1016/j.sse.2005.07.013 ( reposiTUm)

Beiträge in Tagungsbänden

Pruckner, B., Jorstad, N. P., Goes, W., Selberherr, S., & Sverdlov, V. (2024). Magnetic Spin Hall Induced Field-Free Magnetization Switching in SOT-MRAM Devices. In 10th International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2024: Abtract Book (pp. 154–155). ( reposiTUm)

Pruckner, B., Jorstad, N. P., Goes, W., Selberherr, S., & Sverdlov, V. (2024). Field-free Perpendicular Magnetization Switching of SOT-MRAM Devices with Non-Collinear Antiferromagnets. In International Conference on Magnetism: Book of Abstracts (pp. 1842–1842). ( reposiTUm)

Bendra, M., Lacerda de Orio, R., Selberherr, S., Goes, W., & Sverdlov, V. (2024). Influence of Interface Exchange Coupling in Multilayered Spintronic Structures. In Proceedings 2024 47th MIPRO ICT and Electronics Convention (MIPRO) (pp. 1579–1583). https://doi.org/10.1109/MIPRO60963.2024.10569798 ( reposiTUm)

Bendra, M., Ender, J., Lacerda de Orio, R., Selberherr, S., Goes, W., & Sverdlov, V. (2024). Interlayer Exchange Coupling for Enhanced Performance in Spin-Transfer Torque MRAM Devices. In 10th International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2024: Abstract Book (pp. 94–95). ( reposiTUm)

Jorstad, N. P., Goes, W., Selberherr, S., & Sverdlov, V. (2024). Optimizing Unconventional Trilayer SOTs for Field-Free Switching. In 10th International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2024: Abstract Book (pp. 84–85). ( reposiTUm)

Jorstad, N. P., Goes, W., Selberherr, S., & Sverdlov, V. (2024). Optimization of Spin-Orbit Torque for Field-Free Switching of Ferromagnetic Trilayers. In International Conference on Magnetism: Book of Abstract (pp. 1286–1286). ( reposiTUm)

Sverdlov, V., Jorstad, N. P., Bendra, M., Pruckner, B., Hadamek, T., Goes, W., & Selberherr, S. (2024). Modeling Spin and Charge Transport in Magnetic Multilayers: From Emerging Memories to Terahertz Emitters. In Technical Program and Abstract Booklet: TeraTech 2024: The 11th International Symposium of Terahertz Related Devices and Technologies (pp. 13–14). ( reposiTUm)

Pruckner, B., Jorstad, N. P., Hadamek, T., Gös, W., Selberherr, S., & Sverdlov, V. (2024). Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices by Magnetic Spin Hall Effect. In Proceedings 2024 47th MIPRO ICT and Electronics Convention (MIPRO) (pp. 1584–1589). https://doi.org/10.1109/MIPRO60963.2024.10569617 ( reposiTUm)

Bendra, M., Pruckner, B., Lacerda de Orio, R., Selberherr, S., Goes, W., & Sverdlov, V. (2024). Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling. In Proceedings 2024 Device Research Conference (DRC) (pp. 1–2). https://doi.org/10.1109/DRC61706.2024.10605512 ( reposiTUm)

Bendra, M., Lacerda de Orio, R., Goes, W., Selberherr, S., & Sverdlov, V. (2024). Investigating Reliability Issues in Multi-Layered STT-MRAM with Synthetic Antiferromagnets. In 2024 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2024, Singapur, Singapore. https://doi.org/10.1109/IPFA61654.2024.10690971 ( reposiTUm)

Jørstad, N. P., Pruckner, B., Goes, W., Selberherr, S., & Sverdlov, V. (2024). Magnetic Field Free SOT-MRAM Switching. In 2024 Workshop on Innovative Nanoscale Devices and Systems. Book of Abstracts (pp. 44–45). TU Wien. ( reposiTUm)

Pruckner, B., Jorstad, N. P., Bendra, M., Hadamek, T., Goes, W., Selberherr, S., & Sverdlov, V. (2024). Simulation of Advanced MRAM Devices for sub-ns Switching. In B. Pruckner (Ed.), 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 1–4). https://doi.org/10.1109/SISPAD62626.2024.10733317 ( reposiTUm)

Pruckner, B., Jorstad, N. P., Goes, W., Selberherr, S., & Sverdlov, V. (2024). Field-Free Magnetization Switching in SOT-MRAM Devices with Noncollinear Antiferromagnets. In 2024 Austrochip Workshop on Microelectronics (Austrochip) (pp. 1–4). https://doi.org/10.1109/Austrochip62761.2024.10716227 ( reposiTUm)

Bendra, M., Goes, W., Selberherr, S., & Sverdlov, V. (2024). Simulation of SAF-Enhanced Multilayered STT-MRAM Structures. In 2024 Austrochip Workshop on Microelectronics (Austrochip) (pp. 1–4). https://doi.org/10.1109/Austrochip62761.2024.10716241 ( reposiTUm)

Jorstad, N. P., Pruckner, B., Goes, W., Selberherr, S., & Sverdlov, V. (2024). Out-of-plane Polarized Spin Current Generation for Field-free Switching of Perpendicular SOT-MRAM. In Book of abstracts of the Device Research Conference (DRC-2024) (pp. 143–143). http://hdl.handle.net/20.500.12708/202619 ( reposiTUm)

Jorstad, N. P., Pruckner, B., Bendra, M., Goes, W., & Sverdlov, V. (2024). Modeling Advanced Perpendicular MRAM Cells: Generating Spin Currents for Fast Field-free Cell Switching. In The 5th International Congress on Advanced Materials Sciences and Engineering: Abstract Book (pp. 46–46). http://hdl.handle.net/20.500.12708/212143 ( reposiTUm)

Pruckner, B., Jørstad, N. P., Bendra, M., Hadamek, T., Wolfgang Goes, Selberherr, S., & Sverdlov, V. (2024). Simulation of Advanced MRAM Devices for sub-ns Switching. In 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Jose, United States of America (the). https://doi.org/10.1109/SISPAD62626.2024.10733317 ( reposiTUm)

Sverdlov, V., El-Sayed, A.-M. B., Seiler, H., & Kosina, H. (2023). Edge States Dispersion in Narrow Nanoribbons of 2D Transition Metal Dichalcogenides in the 1T′ Topological Phase. In 22nd International Winterschool - New Developments in Solid State Physics - Abstract Book (pp. 116–116). ( reposiTUm)

Jorstad, N. P., Hadamek, T., Bendra, M., Ender, J., Pruckner, B., Goes, W., & Sverdlov, V. (2023). Numerical Simulations of Spintronic Magnetoresistive Memories. In SURGE Virtual Event North America 2023: Agenda (pp. 1–1). ( reposiTUm)

Ender, J., Lacerda de Orio, R., Goes, W., & Sverdlov, V. (2023). Towards Efficient SOT-assisted STT-MRAM Cell Switching using Reinforcement Learning. In 14th International Conference, Large-Scale Scientific Computations LSSC’23 : Scientific Program, Abstracts, List of Participants (pp. 39–39). ( reposiTUm)

Bendra, M., Lacerda de Orio, R., Goes, W., Sverdlov, V., & Selberherr, S. (2023). Modeling of Ultra-Scaled Magnetoresistive Random Access Memory. In Proceedings of the 5th International Conferenceon Microelectronic Devices and Technologies (MicDAT ’2023) (pp. 28–30). ( reposiTUm)

Sverdlov, V., Bendra, M., Jorstad, N. P., Pruckner, B., Hadamek, T., Goes, W., & Selberherr, S. (2023). Multi-bit Operation in an MRAM Cell with a Composite Free Layer. In 2023 Workshop on Innovative Nanoscale Devices and Systems: Book of Abstracts (pp. 143–144). ( reposiTUm)

Sverdlov, V., Bendra, M., Pruckner, B., Jorstad, N. P., Hadamek, T., Ender, J., Lacerda de Orio, R., & Gös, W. (2023). Spin and Charge Transport in Ultra-Scaled MRAM Cells. In Proceedings of the International Conference “Micro- and Nanoelectronics” (ICMNE) (pp. 55–55). https://doi.org/10.29003/m3563.ICMNE-2023 ( reposiTUm)

Hadamek, T., Jorstad, N. P., Goes, W., Selberherr, S., & Sverdlov, V. (2023). Numerical study of two-terminal SOT-MRAM. In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (pp. 1–1). ( reposiTUm)

Pruckner, B., Fiorentini, S., Jorstad, N. P., Hadamek, T., Selberherr, S., Gös, W., & Sverdlov, V. (2023). Switching Performance of Mo-based pMTJ and dsMTJ Structures. In Book of Abstracts of the International Workshop on Computational Nanotechnology (pp. 144–145). ( reposiTUm)

Sverdlov, V., Bendra, M., Goes, W., Fiorentini, S., Garcia-Barrientos, A., & Selberherr, S. (2023). Multi-level Operation in Ultra-scaled MRAM. In 2023 IEEE Latin American Electron Devices Conference (LAEDC) Proceedings. 2023 IEEE Latin American Electron Devices Conference (LAEDC), Puebla, Mexico. https://doi.org/10.1109/LAEDC58183.2023.10209117 ( reposiTUm)

Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Jorstad, N. P., Pruckner, B., Selberherr, S., Goes, W., & Sverdlov, V. (2023). Back-Hopping in Ultra-Scaled MRAM Cells. In Proceedings of the International Convention MIPRO (pp. 159–162). IEEE. https://doi.org/10.23919/MIPRO57284.2023.10159764 ( reposiTUm)

Sverdlov, V., Bendra, M., Pruckner, B., Fiorentini, S., Goes, W., & Selberherr, S. (2023). Comprehensive Modeling of Advanced Composite Magnetoresistive Devices. In Proceedings of the IEEE European Solid-State Device Research Conference (ESSDERC) (pp. 93–96). https://doi.org/10.1109/ESSDERC59256.2023.10268508 ( reposiTUm)

Bendra, M., Fiorentini, S., Selberherr, S., Goes, W., & Sverdlov, V. (2023). Simulation of Spin-Torque and Magnetization Dynamics in STT-MRAM Multi-Level Cells. In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (pp. 1–1). ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2023). Charge and Spin Transport in Semiconductor Devices. In 2023 IEEE 15th International Conference on ASIC (ASICON) (pp. 1–4). https://doi.org/10.1109/ASICON58565.2023.10396645 ( reposiTUm)

Bendra, M., Jorstad, N. P., Lacerda de Orio, R., Selberherr, S., Goes, W., & Sverdlov, V. (2023). Unified Modeling of Ultra-Scaled STT-MRAM Cells: Harnessing Parasitic Effects for Enhanced Data Storage Dynamics. In IEDM 2023 Special MRAM poster session. International Electron Devices Meeting (IEDM 2023), San Francisco, United States of America (the). http://hdl.handle.net/20.500.12708/193762 ( reposiTUm)

Hadamek, T., Jorstad, N. P., Goes, W., Selberherr, S., & Sverdlov, V. (2023). Study of Self-Heating and its Effects in SOT-STT-MRAM. In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 337–340). IEEE. https://doi.org/10.23919/SISPAD57422.2023.10319549 ( reposiTUm)

Bendra, M., Fiorentini, S., Selberherr, S., Goes, W., & Sverdlov, V. (2023). A Multi-Level Cell for Ultra-Scaled STT-MRAM Realized by Back-Hopping. In 9th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2023 (pp. 1–2). http://hdl.handle.net/20.500.12708/189602 ( reposiTUm)

Bendra, M., Fiorentini, S., Hadamek, T., Jorstad, N. P., Ender, J., Lacerda de Orio, R., Selberherr, S., Goes, W., & Sverdlov, V. (2023). Switching Composite Free Layers in Ultra-Scaled MRAM Cells. In 22nd International Winterschool - New Developments in Solid State Physics - Abstract Book (pp. 184–185). http://hdl.handle.net/20.500.12708/188886 ( reposiTUm)

Jorstad, N. P., Fiorentini, S., Goes, W., Selberherr, S., & Sverdlov, V. (2023). Micromagnetic Modeling of SOT-MRAM Dynamics. In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (pp. 1–1). http://hdl.handle.net/20.500.12708/188154 ( reposiTUm)

Pruckner, B., Fiorentini, S., Goes, W., Selberherr, S., & Sverdlov, V. (2023). Impact of Spin-Flip Length in dsMTJ Spacer Layers on Switching Performance. In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023). 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023), Vienna, Austria. http://hdl.handle.net/20.500.12708/189409 ( reposiTUm)

Jorstad, N. P., Goes, W., Selberherr, S., & Sverdlov, V. (2023). Spin Drift-Diffusion Boundary Conditions for FEM Modeling of Multilayer SOT Devices. In Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 357–360). https://doi.org/10.23919/SISPAD57422.2023.10319650 ( reposiTUm)

Fiorentini, S., Pruckner, B., Goes, W., Selberherr, S., & Sverdlov, V. (2023). Accurate Torque Evaluation in Elongated Ultra-Scaled STT-MRAM Devices. In 243rd ECS Meeting with the Eighteenth International Symposium on Solid Oxide Fuel Cells May 28, 2023 - June 2, 2023 Boston, USA (pp. 1–1). https://doi.org/10.1149/MA2023-01331859mtgabs ( reposiTUm)

Sverdlov, V., Jorstad, N. P., Bendra, M., Hadamek, T., & Goes, W. (2023). Modeling Emerging Spintronic Devices and Spintronic THz Emitters. In Book of abstracts of the International Symposium on Terahertz-Related Devices and Technologies (TeraTech 2023) (pp. 50–51). http://hdl.handle.net/20.500.12708/192889 ( reposiTUm)

Hadámek, T., Fiorentini, S., Bendra, M., Orio, R., Loch, W. J., Jorstad, N. P., Selberherr, S., Goes, W., & Sverdlov, V. (2022). Temperature Modeling in STT-MRAM:A Fully Three-Dimensional Finite Element Approach. In Book of Abstracts of the International Conference on Nanostructured Materials (NANO). 16th International Conference on Nanostructured Materials, Sevilla, Spain. http://hdl.handle.net/20.500.12708/153564 ( reposiTUm)

Jørstad, N. P., Fiorentini, S., Selberherr, S., Goes, W., & Sverdlov, V. (2022). Modeling Interfacial and Bulk Spin-Orbit torques. In Book of Abstracts of the International Conference on Nanostructured Materials (NANO). 16th International Conference on Nanostructured Materials, Sevilla, Spain. http://hdl.handle.net/20.500.12708/153565 ( reposiTUm)

Loch, W. J., Selberherr, S., & Sverdlov, V. (2022). Simulation of Novel MRAM Devices with Enhanced Performance. In Book of Abstracts of the International Conference on Nanostructured Materials (NANO). 16th International Conference on Nanostructured Materials, Sevilla, Spain. http://hdl.handle.net/20.500.12708/153566 ( reposiTUm)

Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W. J., Jørstad, N. P., & Selberherr, S. (2022). Modeling Advanced Magnetoresistive Memory: A Journey from Finite Element Methods to Machine Learning Approaches. In 2nd Global Webinar on Nanoscience & Nanotechnology. 2 nd Global Webinar on Nanoscience & Nanotechnology, online, Unknown. http://hdl.handle.net/20.500.12708/153568 ( reposiTUm)

Fiorentini, S., Ender, J., Orio, R., Selberherr, S., Goes, W., & Sverdlov, V. (2022). Comprehensive Evaluation of Torques in Ultra Scaled MRAM Devices. In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 11–12). http://hdl.handle.net/20.500.12708/153578 ( reposiTUm)

Hadámek, T., Goes, W., Selberherr, S., & Sverdlov, V. (2022). Modeling Thermal Effects in STT-MRAM. In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 132–133). http://hdl.handle.net/20.500.12708/153579 ( reposiTUm)

Selberherr, S., & Sverdlov, V. (2022). About Electron Transport and Spin Control in Semiconductor Devices. In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet. 2022 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain. http://hdl.handle.net/20.500.12708/153582 ( reposiTUm)

Sverdlov, V. (2022). Modeling Ultra-Scaled Magnetoresistive Memory Cells. In 3rd Global Webinar on Nanoscience & Nanotechnology. 3rd Global Webinar on Nanoscience & Nanotechnology, online, Unknown. http://hdl.handle.net/20.500.12708/153569 ( reposiTUm)

Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W. J., Jørstad, N. P., Goes, W., & Selberherr, S. (2022). Modeling Advanced Spintronic Based Magnetoresistive Memory. In International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022). International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022), Yerevan, Armenia, Armenia. http://hdl.handle.net/20.500.12708/153572 ( reposiTUm)

Fiorentini, S., Loch, W. J., Bendra, M., Jørstad, N. P., Ender, J., Orio, R., Hadámek, T., Goes, W., Sverdlov, V., & Selberherr, S. (2022). Design Analysis of Ultra-Scaled MRAM Cells. In Proceedings of 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, Nanjing, China, China. http://hdl.handle.net/20.500.12708/153535 ( reposiTUm)

Fiorentini, S., Bendra, M., Ender, J., Orio, R., Goes, W., Selberherr, S., & Sverdlov, V. (2022). Spin Torques in ULTRA-Scaled MRAM Devices. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 348–351). http://hdl.handle.net/20.500.12708/153549 ( reposiTUm)

Fiorentini, S., Ender, J., Selberherr, S., Goes, W., & Sverdlov, V. (2022). Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach. In The 26th World Multi-Conference on Systemics, Cybernetics and Informatics: WMSCI 2022. Proceedings Volume II (pp. 40–44). http://hdl.handle.net/20.500.12708/153554 ( reposiTUm)

Sverdlov, V., Loch, W. J., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Jorstad, N. P., Goes, W., & Selberherr, S. (2022). Modeling Approach to Ultra-Scaled MRAM Cells. In Book of Abstracts of the International Meet On Applied Science, Engineering and Technology (ASETMEET) (pp. 7–8). http://hdl.handle.net/20.500.12708/153545 ( reposiTUm)

Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W. J., Jørstad, N. P., Selberherr, S., Goes, W., & Sverdlov, V. (2022). Spin Transfer Torques in Ultra-Scaled MRAM Cells. In 2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO) (pp. 129–132). http://hdl.handle.net/20.500.12708/153553 ( reposiTUm)

Orio, R., Ender, J., Goes, W., Fiorentini, S., Selberherr, S., & Sverdlov, V. (2022). About the Switching Energy of a Magnetic Tunnel Junction determined by Spin-Orbit Torque and Voltage-Controlled Magnetic Anisotropy. In 2022 IEEE Latin American Electron Devices Conference (LAEDC). 2022 IEEE Latin American Electron Devices Conference (LAEDC), Puebla, Mexico, Mexico. 978-1-6654-9768-8. https://doi.org/10.1109/laedc54796.2022.9908222 ( reposiTUm)

Sverdlov, V., Seiler, H., El-Sayed, A.-M., Illarionov, Y., Kosina, H., & Selberherr, S. (2022). Edge Modes in Narrow Nanoribbons of Transition Metal Dichalcogenides in a Topological 1T. In International Conference on Physics and its Application 2022 (pp. 36–37). http://hdl.handle.net/20.500.12708/153561 ( reposiTUm)

Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W. J., Jørstad, N. P., Goes, W., & Selberherr, S. (2022). Emerging Devices for Digital Spintronics. In 2nd Global Conference & Expo on Nanotechnology & Nanoscience (pp. 32–33). http://hdl.handle.net/20.500.12708/153560 ( reposiTUm)

Sverdlov, V., El-Sayed, A.-M. B., Seiler, H., & Kosina, H. (2022). Edge State Band Gap Dependencies on the Width of Transition Metal Dichalcogenide Nanoribbons in the 1T′ Topological Phase. In Workshop on Innovative Nanoscale Devices and Systems. Book of Abstracts (pp. 48–49). TU Wien. ( reposiTUm)

Fiorentini, S., Bendra, M., Ender, J., Goes, W., Sverdlov, V., & Selberherr, S. (2022). Evaluating Spin Transfer Torques in Multilayered Magnetic Tunnel Junctions and Spin Valves. In Workshop on Innovative Nanoscale Devices and Systems. Book of Abstracts (pp. 44–45). TU Wien. http://hdl.handle.net/20.500.12708/177016 ( reposiTUm)

Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W. J., Jorstad, N. P., Goes, W., & Selberherr, S. (2022). Advanced Modeling of Emerging Magneto-resistive Memory. In NANOMEET 2022 2nd International Meet & Expo on Nanotechnology (pp. 78–79). http://hdl.handle.net/20.500.12708/187443 ( reposiTUm)

Ender, J., Fiorentini, S., Orio, R., Hadámek, T., Bendra, M., Goes, W., Selberherr, S., & Sverdlov, V. (2022). Advances in Modeling Emerging Magnetoresistive Random Access Memories: From Finite Element Methods to Machine Learning Approaches. In V. Lukichev & K. Rudenko (Eds.), Proc. SPIE 12157, International Conference on Micro- and Nano-Electronics 2021. SPIE. https://doi.org/10.1117/12.2624595 ( reposiTUm)

Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W. J., Jorstad, N. P., Goes, W., & Selberherr, S. (2022). Advanced Modeling of Emerging Devices for Digital Spintronics. In 2nd International Conference on Nanoscience and Nanotechnology (pp. 40–40). http://hdl.handle.net/20.500.12708/188147 ( reposiTUm)

Fiorentini, S., Bendra, M., Ender, J., Hadamek, T., Loch, W. J., Jorstad, N. P., Lacerda de Orio, R., Goes, W., Selberherr, S., & Sverdlov, V. (2022). Modeling Advanced Spintronic Based Magnetoresistive Memory. In International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022) (pp. 49–52). Institution of Engineering and Technology. https://doi.org/10.1049/icp.2022.2795 ( reposiTUm)

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Mahmoudi, H., Sverdlov, V., & Selberherr, S. (2012). Novel Memristive Charge- and Flux-Based Sensors. In Proceedings of the 8th Conference on Ph.D. Research in Microelectronics & Electronics (p. 4). http://hdl.handle.net/20.500.12708/72847 ( reposiTUm)

Mahmoudi, H., Sverdlov, V., & Selberherr, S. (2012). State Drift Optimization of Memristive Stateful IMP Logic Gates. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 243–244). http://hdl.handle.net/20.500.12708/72829 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2012). Reduction of the Switching Current in Spin Transfer Torque Random Access Memory. In Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Into the Cross Currents (p. 49). http://hdl.handle.net/20.500.12708/72853 ( reposiTUm)

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Mahmoudi, H., Sverdlov, V., & Selberherr, S. (2012). A Robust and Efficient MTJ-based Spintronic IMP Gate for New Logic Circuits and Large-Scale Integration. In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 225–228). http://hdl.handle.net/20.500.12708/72949 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2012). MOSFET and Spin Transistor Simulations. In Abstract of 2012 CMOS Emerging Technologies (p. 1). http://hdl.handle.net/20.500.12708/72931 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2012). Study of Self-Accelerating Switching in MTJs with Composite Free Layer by Micromagnetic Simulations. In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 229–232). http://hdl.handle.net/20.500.12708/72946 ( reposiTUm)

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Makarov, A., Sverdlov, V., & Selberherr, S. (2012). STT-RAM with a Composite Free Layer: High Thermal Stability, Low Switching Barrier, and Sharp Switching Time Distribution. In Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012) (p. H4). http://hdl.handle.net/20.500.12708/72908 ( reposiTUm)

Windbacher, T., Makarov, A., Sverdlov, V., & Selberherr, S. (2012). Simulations of an Electrical Read-Write Operation of a Magnetic XOR Gate. In Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012) (p. J3). http://hdl.handle.net/20.500.12708/72909 ( reposiTUm)

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Makarov, A., Sverdlov, V., & Selberherr, S. (2012). New Trends in Microelectronics: Towards an Ultimate Memory Concept. In 2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS). IEEE Xplore. https://doi.org/10.1109/iccdcs.2012.6188899 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2012). Recent developments in advanced memory modeling. In 2012 28th International Conference on Microelectronics Proceedings. International Conference on Microelectronics (MIEL), Beograd, Non-EU. https://doi.org/10.1109/miel.2012.6222795 ( reposiTUm)

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Makarov, A., Sverdlov, V., & Selberherr, S. (2012). Modeling Emerging Non-volatile Memories: Current Trends and Challenges. In Physics Procedia (pp. 99–104). https://doi.org/10.1016/j.phpro.2012.03.056 ( reposiTUm)

Mahmoudi, H., Sverdlov, V., & Selberherr, S. (2012). Influence of Geometry on Memristive Behavior of the Domain Wall Spintronic Memristors and its Applications for Measurements. In Proceedings of International Conference on Superconductivity and Magnetism (ICSM 2012) (p. 1). http://hdl.handle.net/20.500.12708/72794 ( reposiTUm)

Sverdlov, V., Makarov, A., & Selberherr, S. (2012). Switching Energy Barrier and Current Reduction in MTJs with Composite Free Layer. In Bulletin American Physical Society (APS March Meeting 2012) (p. 1). http://hdl.handle.net/20.500.12708/72746 ( reposiTUm)

Makarov, A., Selberherr, S., & Sverdlov, V. (2012). Emerging Non-Volatile Memories for Ultra-Low Power Applications. In Tagungsband zur Informationstagung Mikroelektronik 12 (pp. 21–24). http://hdl.handle.net/20.500.12708/72791 ( reposiTUm)

Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., & Selberherr, S. (2012). Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors. In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 153–156). http://hdl.handle.net/20.500.12708/72947 ( reposiTUm)

Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., & Selberherr, S. (2012). Reduction of Surface Roughness Induced Spin Relaxation in MOSFETs by Strain. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 229–230). http://hdl.handle.net/20.500.12708/72824 ( reposiTUm)

Osintsev, D., Sverdlov, V., & Selberherr, S. (2012). Using Strain for the Reduction of Surface Roughness Induced Spin Relaxation in Field-Effect Transistors with Thin Silicon Body. In Conference Proceedings of the VIII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits (pp. 77–78). http://hdl.handle.net/20.500.12708/72710 ( reposiTUm)

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Windbacher, T., Osintsev, D., Makarov, A., Sverdlov, V., & Selberherr, S. (2012). Fully Electrically Read- Write Magneto Logic Gates. In Book of Abstracts (p. 1). http://hdl.handle.net/20.500.12708/72985 ( reposiTUm)

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Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., & Selberherr, S. (2012). Valley Splitting and Spin Relaxation in Strained Silicon Quantum Wells. In Book of Abstracts (p. P-27). http://hdl.handle.net/20.500.12708/72930 ( reposiTUm)

Osintsev, D., Sverdlov, V., & Selberherr, S. (2012). Modeling Spintronic Effects in Silicon. In Abstracts International Workshop on Mathematics for Semiconductor Heterostructures (MSH) (p. 3). http://hdl.handle.net/20.500.12708/72966 ( reposiTUm)

Osintsev, D., Sverdlov, V., Makarov, A., & Selberherr, S. (2012). Surface Roughness Induced Spin Scattering and Relaxation in Silicon SOI MOSFETs. In Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012) (p. B3). http://hdl.handle.net/20.500.12708/72903 ( reposiTUm)

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Osintsev, D., Makarov, A., Sverdlov, V., & Selberherr, S. (2012). Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins. In I. Lirkov, S. Margenov, & J. Waśniewski (Eds.), Large-Scale Scientific Computing: 8th International Conference, LSSC 2011 (pp. 630–637). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-642-29843-1_72 ( reposiTUm)

Stanojevic, Z., Sverdlov, V., & Selberherr, S. (2011). Subband Structure Engineering in Silicon-On-Insulator FinFETs Using Confinement. In ECS Transactions (pp. 117–122). https://doi.org/10.1149/1.3570785 ( reposiTUm)

Makarov, A., Sverdlov, V., Kryzhanovsky, D., Girkin, M., & Selberherr, S. (2011). Modeling of Non-Volatile Memory Cells of RRAM Type on High Performance Computer Systems with the Monte-Carlo Method. In Book of Abstracts: Parallel Computing Technologies (PaVT) (p. 1). http://hdl.handle.net/20.500.12708/72155 ( reposiTUm)

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Osintsev, D., Sverdlov, V., Makarov, A., & Selberherr, S. (2011). Properties of InAs- and silicon-based ballistic spin field-effect transistors. In 2011 International Conference on Simulation of Semiconductor Processes and Devices. 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan. IEEE. https://doi.org/10.1109/sispad.2011.6035049 ( reposiTUm)

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Makarov, A., Sverdlov, V., Osintsev, D., & Selberherr, S. (2011). Fast Switching in Magnetic Tunnel Junctions with Double Barrier Layer. In Extended Abstracts of 2011 International Conference on Solid State Devices and Materials (p. 2). http://hdl.handle.net/20.500.12708/72326 ( reposiTUm)

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Makarov, A., Sverdlov, V., Osintsev, D., Weinbub, J., & Selberherr, S. (2011). Modeling of the Advanced Spin Transfer Torque Memory: Macro- and Micromagnetic Simulations. In Proceedings of the 25th European Simulation and Modelling Conference (pp. 177–181). http://hdl.handle.net/20.500.12708/72370 ( reposiTUm)

Makarov, A., Sverdlov, V., Osintsev, D., & Selberherr, S. (2011). Micromagnetic Modeling of Penta-Layer Magnetic Tunnel Junctions with a Composite Soft Layer. In Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems (p. 1). http://hdl.handle.net/20.500.12708/72224 ( reposiTUm)

Makarov, A., Sverdlov, V., Osintsev, D., & Selberherr, S. (2011). Modeling of the Switching Process in Multi-Layered Magnetic Tunnel Junctions. In Proceedings of International School and Conference on Spintronics and Quantum Information Technology (p. 238). http://hdl.handle.net/20.500.12708/72232 ( reposiTUm)

Makarov, A., Sverdlov, V., Osintsev, D., & Selberherr, S. (2011). About the Switching Process in Magnetic Tunnel Junctions with Two Fixed Layers and One Soft Magnetic Layer. In Abstracts Book of The 20th International Conference on Soft Magnetic Materials (p. 444). http://hdl.handle.net/20.500.12708/72295 ( reposiTUm)

Makarov, A., Sverdlov, V., Osintsev, D., & Selberherr, S. (2011). Optimization of the Penta-Layer Magnetic Tunnel Junction for Fast STTRAM Switching. In Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN) (p. 2). http://hdl.handle.net/20.500.12708/72493 ( reposiTUm)

Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Weinbub, J., & Selberherr, S. (2011). Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors. In Meeting Abstracts (p. 1). ECS. http://hdl.handle.net/20.500.12708/75949 ( reposiTUm)

Makarov, A., Sverdlov, V., Osintsev, D., & Selberherr, S. (2011). Switching Time and Current Reduction Using a Composite Free Layer in Magnetic Tunnel Junctions. In Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011) (p. 2). http://hdl.handle.net/20.500.12708/72502 ( reposiTUm)

Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., & Selberherr, S. (2011). Transport properties of spin field-effect transistors built on Si and InAs. In Ulis 2011 Ultimate Integration on Silicon. International Conference on Ultimate Integration of Silicon (ULIS), Bologna, Austria. IEEE. https://doi.org/10.1109/ulis.2011.5757998 ( reposiTUm)

Sverdlov, V., Stanojevic, Z., Baumgartner, O., & Selberherr, S. (2010). Confinement-Enhanced Valley Splitting for Spin-Driven Silicon Devices. In Proceedings of the 6#^{th} International Conference on the Physics and Application of Spin Related Phenomena in Semiconductors (PASPS-VI) (pp. 273–274). http://hdl.handle.net/20.500.12708/71955 ( reposiTUm)

Sverdlov, V., Stanojevic, Z., Baumgartner, O., & Selberherr, S. (2010). Enhanced Valley Splitting in Silicon Nanowires and Point Contacts. In Abstract Book of the Nanoelectronics Days 2010 (p. 118). JARA-FIT. http://hdl.handle.net/20.500.12708/72133 ( reposiTUm)

Sverdlov, V., Baumgartner, O., & Selberherr, S. (2010). Large Valley Splitting in Slightly Misaligned Uniaxially Strained Silicon Films. In Bulletin American Physical Society (APS March Meeting 2010) (p. B9.00001). http://hdl.handle.net/20.500.12708/71956 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2010). Modelling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations. In Abstracts of the International Conference on Numerical Methods and Applications (NM&A) (p. B-39). http://hdl.handle.net/20.500.12708/71599 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2010). Modeling of Resistive Switching in RRAM Using Monte Carlo Simulations. In Book of Abstracts (p. 141). http://hdl.handle.net/20.500.12708/71606 ( reposiTUm)

Makarov, A., Weinbub, J., Sverdlov, V., & Selberherr, S. (2010). First-Principles Modeling of Bipolar Resistive Switching in Metal-Oxide Based Memory. In Proceedings of the European Simulation and Modelling Conference (ESM) (pp. 181–186). http://hdl.handle.net/20.500.12708/71666 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2010). Monte Carlo Simulation of Bipolar Resistive Switching Memories. In Proceedings of the Nanoelectronics Days 2010 (p. 22). http://hdl.handle.net/20.500.12708/71665 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2010). A Monte Carlo simulation of reproducible hysteresis in RRAM. In 2010 14th International Workshop on Computational Electronics. International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA, Non-EU. https://doi.org/10.1109/iwce.2010.5677934 ( reposiTUm)

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Makarov, A., Sverdlov, V., & Selberherr, S. (2010). Stochastic modeling hysteresis and resistive switching in bipolar oxide-based memory. In 2010 International Conference on Simulation of Semiconductor Processes and Devices. 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy. IEEE. https://doi.org/10.1109/sispad.2010.5604517 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2010). Stochastic Modeling of the Resistive Switching Mechanism in Oxide-Based Memory. In Proceedings of the 17#^{th} International Symposium on the Physics & Failure Analysis of Integrated Circuits (pp. 309–312). http://hdl.handle.net/20.500.12708/71664 ( reposiTUm)

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Pourfath, M., Sverdlov, V., & Selberherr, S. (2010). Transport Modeling for Nanoscale Semiconductor Devices. In Proceedings of the International Conference on Solid-State and Integrated Circuit Technology (ICSICT) (pp. 1737–1740). http://hdl.handle.net/20.500.12708/71692 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2010). Scalability of a Second Generation Z-RAM Cell: A Computational Study. In Proceedings of the International Conference on Computational & Experimental Engineering and Sciences (ICCES) (pp. 232–247). http://hdl.handle.net/20.500.12708/71386 ( reposiTUm)

Pourfath, M., Sverdlov, V., & Selberherr, S. (2010). Modeling Demands for Nanoscale Devices. In Proceedings of the Device Research Conference (DRC) (pp. 211–214). http://hdl.handle.net/20.500.12708/71474 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2010). Modeling floating body Z-RAM storage cells. In 2010 27th International Conference on Microelectronics Proceedings. International Conference on Microelectronics (MIEL), Beograd, Non-EU. https://doi.org/10.1109/miel.2010.5490533 ( reposiTUm)

Baumgartner, O., Sverdlov, V., Kosina, H., & Selberherr, S. (2010). Strain-Induced Valley Splitting in Slightly Misaligned Silicon Films. In Conference Proceedings of the Sixth Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits (pp. 91–92). http://hdl.handle.net/20.500.12708/71369 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2010). Modeling of Modern MOSFETs with Strain. In Proceedings of the 1st International Workshop on Semiconductor Devices Modeling and Electronic (SDMEM2010) (pp. 1–11). http://hdl.handle.net/20.500.12708/72491 ( reposiTUm)

Stanojevic, Z., Baumgartner, O., Sverdlov, V., & Kosina, H. (2010). Subband Structure of Silicon Nanowires from the Hensel-Hasegawa-Nakayama Model. In Proceedings of the 11th International Conference on Ultimate Integration o Silicon (pp. 69–72). http://hdl.handle.net/20.500.12708/72142 ( reposiTUm)

Sverdlov, V., Stanojevic, Z., Baumgartner, O., & Selberherr, S. (2010). Spin-Driven Silicon Devices Utilizing Enhanced Valley Splitting. In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. TH-06). http://hdl.handle.net/20.500.12708/71853 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2010). Strain Engineering Techniques: A Rigorous Physical Review. In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. TH-05). http://hdl.handle.net/20.500.12708/71852 ( reposiTUm)

Vasicek, M., Sverdlov, V., Cervenka, J., Grasser, T., Kosina, H., & Selberherr, S. (2010). Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models. In I. Lirkov, S. Margenov, & J. Waśniewski (Eds.), Large-Scale Scientific Computing: 7th International Conference, LSSC 2009 (pp. 443–450). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-642-12535-5_52 ( reposiTUm)

Sverdlov, V., Vasicek, M., Cervenka, J., Grasser, T., Kosina, H., & Selberherr, S. (2009). Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models. In Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC) (p. 93). http://hdl.handle.net/20.500.12708/71598 ( reposiTUm)

Sverdlov, V., Baumgartner, O., & Selberherr, S. (2009). Subband Parameters in Strained (110) Silicon Films from the Hensel-Hasegawa-Nakayama Model of the Conduction Band. In Proceedings of the International Semiconductor Device Research Symposium (ISDRS) (pp. TP6-03.1-2). http://hdl.handle.net/20.500.12708/71287 ( reposiTUm)

Sverdlov, V., Baumgartner, O., Windbacher, T., & Selberherr, S. (2009). Modeling Techniques for Strained CMOS Technology. In 216#^{th} ECS Meeting (pp. 3–18). http://hdl.handle.net/20.500.12708/71288 ( reposiTUm)

Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovsky, F., & Selberherr, S. (2009). Thickness Dependence of the Effective Masses in a Strained Thin Silicon Film. In 2009 International Conference on Simulation of Semiconductor Processes and Devices. 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, United States of America (the). IEEE. https://doi.org/10.1109/sispad.2009.5290252 ( reposiTUm)

Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovsky, F., & Selberherr, S. (2009). Impact of Confinement and Stress on the Subband Parameters in Ultra-Thin Silicon Films. In ECS Transactions (pp. 389–396). http://hdl.handle.net/20.500.12708/71019 ( reposiTUm)

Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., & Ringhofer, Ch. (2009). Study of the Properties of Biotin-Streptavidin Sensitive BioFETs. In Proceedings of the International Conference on Biomedical Electronics and Devices (BIODEVICES) (pp. 24–30). http://hdl.handle.net/20.500.12708/71321 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2009). Scaling of Advanced Floating Body Z-RAM Storage Cells: A Modeling Approach. In Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC) (p. 4). http://hdl.handle.net/20.500.12708/70972 ( reposiTUm)

Sverdlov, V., Baumgartner, O., Kosina, H., Selberherr, S., Schanovsky, F., & Esseni, D. (2009). The Linear Combination of Bulk Bands-Method for Electron and Hole Subband Calculations in Strained Silicon Films and Surface Layers. In 2009 13th International Workshop on Computational Electronics. International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA, Non-EU. https://doi.org/10.1109/iwce.2009.5091158 ( reposiTUm)

Windbacher, T., Sverdlov, V., & Selberherr, S. (2009). Modeling of Low Concentrated Buffer DNA Detection with Suspend Gate Field-Effect Transistors (SGFET). In 2009 13th International Workshop on Computational Electronics. International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA, Non-EU. https://doi.org/10.1109/iwce.2009.5091122 ( reposiTUm)

Baumgartner, O., Karner, M., Sverdlov, V., & Kosina, H. (2009). Numerical Quadrature of the Subband Distribution Functions in Strained Silicon UTB Devices. In 2009 13th International Workshop on Computational Electronics. International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA, Non-EU. https://doi.org/10.1109/iwce.2009.5091131 ( reposiTUm)

Sverdlov, V., Windbacher, T., Baumgartner, O., Schanovsky, F., & Selberherr, S. (2009). Valley Splitting in Thin Silicon Films from a Two-Band k·p Model. In Proceedings of the 10#^{th} International Conference on Ultimate Integration of Silicon (pp. 277–280). http://hdl.handle.net/20.500.12708/70760 ( reposiTUm)

Sverdlov, V., Baumgartner, O., Windbacher, T., & Selberherr, S. (2009). Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Ultra-Thin Films. In Proceedings of 2009 Silicon Nanoelectronics Workshop (pp. 95–96). http://hdl.handle.net/20.500.12708/70865 ( reposiTUm)

Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovsky, F., & Selberherr, S. (2009). Impact of Confinement of Semiconductor and Band Engineering on Future Device Performance. In 215#^{th} ECS Meeting (pp. 15–26). http://hdl.handle.net/20.500.12708/70835 ( reposiTUm)

Sverdlov, V., Baumgartner, O., Windbacher, T., & Selberherr, S. (2009). Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting. In Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Unmapped Roads (p. 58). http://hdl.handle.net/20.500.12708/70836 ( reposiTUm)

Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., & Ringhofer, Ch. (2009). Study of the Properties of Biotin-Streptavidin Sensitive Biofets. In Final Program and Book of Abstracts (p. 42). http://hdl.handle.net/20.500.12708/70726 ( reposiTUm)

Sverdlov, V., Windbacher, T., Baumgartner, O., & Selberherr, S. (2009). Electron Subband Structure and Valley Splitting in Silicon Ultra-Thin Body SOI Structures from the Two-Band k.p Model. In EUROSOI 2009 Conference Proceedings (pp. 81–82). http://hdl.handle.net/20.500.12708/70775 ( reposiTUm)

Baumgartner, O., Karner, M., Sverdlov, V., & Kosina, H. (2009). Numerical Study of the Electron Subband Structure in Strained Silicon UTB Devices. In EUROSOI 2009 Conference Proceedings (pp. 57–58). http://hdl.handle.net/20.500.12708/70774 ( reposiTUm)

Tyaginov, S. E., Sverdlov, V., Gös, W., Schwaha, P., Heinzl, R., Stimpfl, F., & Grasser, T. (2009). Si-O Bond-Breakage Energetics under Consideration of the Whole Crystal. In Proceedings of the International Semiconductor Technology Conference & China Semiconductor Technology International Conference (p. 84). http://hdl.handle.net/20.500.12708/70883 ( reposiTUm)

Tyaginov, S. E., Sverdlov, V., Gös, W., Schwaha, P., Heinzl, R., Stimpfl, F., & Grasser, T. (2009). Impact of the Surrounding Network on the Si-O Bond-Breakage Energetics. In Proceedings of the 2009 MRS Spring Meeting. Materials Research Society Spring Meeting (MRS), San Francisco, Non-EU. http://hdl.handle.net/20.500.12708/70884 ( reposiTUm)

Sverdlov, V., Baumgartner, O., Tyaginov, S. E., Windbacher, T., & Selberherr, S. (2009). Subband Structure in Ultra-Thin Silicon Films. In Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology (pp. 62–63). http://hdl.handle.net/20.500.12708/70881 ( reposiTUm)

Tyaginov, S. E., Sverdlov, V., Gös, W., & Grasser, T. (2009). Statistics of Si-O Bond-Breakage Rate Variations Induced by O-Si-O Angle Fluctuations. In 2009 13th International Workshop on Computational Electronics. International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA, Non-EU. https://doi.org/10.1109/iwce.2009.5091156 ( reposiTUm)

Tyaginov, S. E., Gös, W., Grasser, T., Sverdlov, V., Schwaha, P., Heinzl, R., & Stimpfl, F. (2009). Description of Si-O Bond Breakage Using Pair-Wise Interatomic Potentials Under Consideration of the Whole Crystal. In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 514–522). http://hdl.handle.net/20.500.12708/70795 ( reposiTUm)

Tyaginov, S. E., Sverdlov, V., Gös, W., & Grasser, T. (2009). Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate. In Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Maastricht, EU. http://hdl.handle.net/20.500.12708/72192 ( reposiTUm)

Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovski, F., & Selberherr, S. (2009). Enhanced by Shear Strain Splitting of Unprimed Subbands in (001) Silicon Films and Point Contacts. In Abstracts of the International Conference on Spintronics and Quantum Information Technology (SPINTECH) (p. 301). http://hdl.handle.net/20.500.12708/71269 ( reposiTUm)

Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., & Ringhofer, C. (2008). Simulation of field-effect Biosensors (BioFETs). In 2008 International Conference on Simulation of Semiconductor Processes and Devices. 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kanagawa, Japan. IEEE. https://doi.org/10.1109/sispad.2008.4648270 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2008). Modeling and Simulation of Advanced Floating Body Z-RAM Memory Cells. In Proceedings European Simulation and Modeling Conference (ESM) (pp. 380–384). http://hdl.handle.net/20.500.12708/70465 ( reposiTUm)

Windbacher, T., Sverdlov, V., Selberherr, S., & Heitzinger, C. (2008). A General Bottom-Up Modeling Approach for BioFETs. In Abstracts Conf.on Nanosensors for Industrial Applications (NANOSENS). 2. Internationale Konferenz NanoSens2008, Vienna, Austria. http://hdl.handle.net/20.500.12708/70466 ( reposiTUm)

Sverdlov, V., Windbacher, T., Kosina, H., & Selberherr, S. (2008). Stress-Induced Valley Splitting in Silicon Thin Films. In Proceedings of the 9th International Conference on Ultimate Integration on Silicon (pp. 93–96). http://hdl.handle.net/20.500.12708/70594 ( reposiTUm)

Sverdlov, V., Kosina, H., & Selberherr, S. (2008). Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond. In Proceedings of the 4#^{th} Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (pp. 41–42). http://hdl.handle.net/20.500.12708/70595 ( reposiTUm)

Pourfath, M., Sverdlov, V., & Kosina, H. (2008). On the Role of Off‐Diagonal Dephasing in Carbon Nanotube Based Photo‐Detectors. In 1#^{st} Fone Conference Nanoelectronics 2008 (p. 41). http://hdl.handle.net/20.500.12708/70255 ( reposiTUm)

Gös, W., Karner, M., Sverdlov, V., & Grasser, T. (2008). A Rigorous Model for Trapping and Detrapping in Thin Gate Dielectrics. In Proceedings 15#^{th} International Symposium on the Physical and Failure Analysis of Integrated Circuits (pp. 249–254). http://hdl.handle.net/20.500.12708/70254 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2008). Strain-Controlled Valley Splitting in Si-SiGe Heterostructures. In Abstract Book (pp. 20–21). http://hdl.handle.net/20.500.12708/70213 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2008). Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress. In ECS Transactions (pp. 159–168). http://hdl.handle.net/20.500.12708/70748 ( reposiTUm)

Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., & Ringhofer, Ch. (2008). Simulation of Field-Effect Biosensors (BioFETs) for Biotin-Streptavidin Complexes. In PHYSICS OF SEMICONDUCTORS: 29#^{th} International Conference on the Physics of Semiconductors (pp. 507–508). http://hdl.handle.net/20.500.12708/71358 ( reposiTUm)

Sverdlov, V., Kosina, H., & Selberherr, S. (2008). Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations with an Analytical Two-Band k·p Model: Conduction Band of Silicon. In K. A. Valiev & A. A. Orlikovsky (Eds.), Micro- and Nanoelectronics 2007 (pp. 70251I-1-70251I – 8). https://doi.org/10.1117/12.802503 ( reposiTUm)

Sverdlov, V., Ungersboeck, E., & Kosina, H. (2008). Monte Carlo Algorithm for Mobility Calculations in Thin Body Field Effect Transistors: Role of Degeneracy and Intersubband Scattering. In I. Lirkov, S. Margenov, & J. Waśniewski (Eds.), Large-Scale Scientific Computing: 6th International Conference, LSSC 2007 (pp. 157–164). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-540-78827-0_16 ( reposiTUm)

Okhonin, S., Nagoga, M., Lee, C. W., Colinge, J. P., Afzalian, A., Yan, R., Akhavan, N. D., Xiong, W., Sverdlov, V., Selberherr, S., & Mazure, C. (2008). Ultra-Scaled Z-RAM Cell. In 2008 IEEE International SOI Conference Proceedings (pp. 157–158). https://doi.org/10.1109/SOI.2008.4656342 ( reposiTUm)

Grasser, T., Gös, W., Sverdlov, V., & Kaczer, B. (2007). The Universality of NBTI Relaxation and its Implications for Modeling and Characterization. In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 268–280). http://hdl.handle.net/20.500.12708/69672 ( reposiTUm)

Sverdlov, V., Karlowatz, G., Kosina, H., & Selberherr, S. (2007). Two-Band k.p Model for the Conduction Band in Silicon. In Proceedings European Simulation and Modeling Conference (pp. 220–224). http://hdl.handle.net/20.500.12708/70037 ( reposiTUm)

Sverdlov, V., Ungersböck, S. E., & Kosina, H. (2007). Influence of Uniaxial [110] Stress on Silicon Band Structure and Electron Low-Field Mobility in Ultra-Thin Body SOIs. In EUROSOI 2007 (pp. 39–40). http://hdl.handle.net/20.500.12708/70059 ( reposiTUm)

Sverdlov, V., Kosina, H., & Selberherr, S. (2007). Conduction Band in Silicon: Numerical Versus Analytical Two-Band k·p Model. In 8#^{th} Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics (p. 4). http://hdl.handle.net/20.500.12708/70060 ( reposiTUm)

Sverdlov, V., Karlowatz, G., Dhar, S., Kosina, H., & Selberherr, S. (2007). Two-Band k·p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility. In 2007 International Semiconductor Device Research Symposium (p. 2). http://hdl.handle.net/20.500.12708/70046 ( reposiTUm)

Sverdlov, V. (2007). Enhancing Performance of Modern MOSFETs: Strain Engineering and Advanced Device Architectures. In 7#^{th} International Conference Frontiers of Josephson Physics and Nanoscience (pp. 63–64). http://hdl.handle.net/20.500.12708/70062 ( reposiTUm)

Sverdlov, V., Kosina, H., & Selberherr, S. (2007). Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations with an Analytical Two-Band k·p Model: Conduction Band of Silicon. In International Conference “Micro and Nanoelectronics - 2007” Book of Abstracts. International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Non-EU. http://hdl.handle.net/20.500.12708/70061 ( reposiTUm)

Sverdlov, V., Ungersböck, S. E., Kosina, H., & Selberherr, S. (2007). Effects of Shear Strain on the Conduction Band in Silicon: An Efficient Two-Band k.p Theory. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 386–389). http://hdl.handle.net/20.500.12708/69752 ( reposiTUm)

Sverdlov, V., & Kosina, H. (2007). Electron Subband Dispersions in Ultra-Thin Silicon Films from a Two-Band k·p Theory. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 92–93). http://hdl.handle.net/20.500.12708/69805 ( reposiTUm)

Sverdlov, V. A., Karlowatz, G., Ungersboeck, E., & Kosina, H. (2007). Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparabolicity Parameter. In T. Grasser & S. Selberherr (Eds.), Simulation of Semiconductor Processes and Devices 2007 (pp. 329–332). Springer-Verlag. https://doi.org/10.1007/978-3-211-72861-1_79 ( reposiTUm)

Ungersboeck, E., Sverdlov, V., Kosina, H., & Selberherr, S. (2007). Low-Field Mobility in Strained Silicon Inversion Layers and UTB MOSFETs for Different Substrate Orientations. In AIP Conference Proceedings. American Institute of Physics. https://doi.org/10.1063/1.2730422 ( reposiTUm)

Sverdlov, V., Kosina, H., Grasser, T., & Selberherr, S. (2007). Self-Consistent Wigner Monte Carlo Simulations of Current in Emerging Nanodevices: Role of Tunneling and Scattering. In AIP Conference Proceedings. American Institute of Physics. https://doi.org/10.1063/1.2730425 ( reposiTUm)

Sverdlov, V., Kosina, H., & Selberherr, S. (2006). Current Transport in Nanoelectronic Semiconductor Devices. In Proceedings IEEE Conference on Emerging Technologies - Nanoelectronics (pp. 490–495). http://hdl.handle.net/20.500.12708/68929 ( reposiTUm)

Sverdlov, V., Ungersböck, S. E., & Kosina, H. (2006). Mobility for High Effective Field in Double-Gate and Single-Gate SOI for Different Substrate Orientations. In EUROSOI 2006 Second Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (pp. 133–134). http://hdl.handle.net/20.500.12708/68998 ( reposiTUm)

Kosina, H., Sverdlov, V., & Grasser, T. (2006). Wigner Monte Carlo Simulation: Particle Annihilation and Device Applications. In 2006 International Conference on Simulation of Semiconductor Processes and Devices. 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, California, United States of America (the). IEEE. https://doi.org/10.1109/sispad.2006.282908 ( reposiTUm)

Ungersboeck, E., Sverdlov, V., Kosina, H., & Selberherr, S. (2006). Electron Inversion Layer Mobility Enhancement by Uniaxial Stress on (001) and (110) Oriented MOSFETs. In 2006 International Conference on Simulation of Semiconductor Processes and Devices. 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, California, United States of America (the). IEEE. https://doi.org/10.1109/sispad.2006.282834 ( reposiTUm)

Ungersböck, S. E., Sverdlov, V., Kosina, H., & Selberherr, S. (2006). Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations. In 210#^{th} ECS Meeting (p. 1). http://hdl.handle.net/20.500.12708/69275 ( reposiTUm)

Sverdlov, V., Kosina, H., & Selberherr, S. (2006). Current Flow in Upcoming Microelectronic Devices. In Proceedings International Caribbean Conference on Devices, Circuits and Systems (pp. 3–8). http://hdl.handle.net/20.500.12708/69021 ( reposiTUm)

Sverdlov, V., Ungersböck, S. E., Kosina, H., & Selberherr, S. (2006). Comparative Study of Low-Field Mobilities in Double- and Single-Gate Ultra-Thin Body SOI for Different Substrate Orientations. In Abstracts IEEE 2006 Silicon Nanoelectronics Workshop (pp. 17–18). http://hdl.handle.net/20.500.12708/69094 ( reposiTUm)

Sverdlov, V., & Grasser, T. (2006). Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 29–30). http://hdl.handle.net/20.500.12708/69063 ( reposiTUm)

Sverdlov, V., Ungersböck, S. E., & Kosina, H. (2006). Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions. In NATO Advanced Research Workshop Conference Abstracts (pp. 77–78). http://hdl.handle.net/20.500.12708/69436 ( reposiTUm)

Ungersböck, S. E., Sverdlov, V., Kosina, H., & Selberherr, S. (2006). Modeling of Advanced Semiconductor Devices. In ECS Transactions (pp. 207–216). http://hdl.handle.net/20.500.12708/69241 ( reposiTUm)

Ungersböck, S. E., Sverdlov, V., Kosina, H., & Selberherr, S. (2006). Strain Engineering for CMOS Devices. In 2006 8#^{th} International Conference on Solid-State and Integrated Circuit Technology Proceedings (Part 1 of 3) (pp. 124–127). http://hdl.handle.net/20.500.12708/69276 ( reposiTUm)

Sverdlov, V., Ungersböck, S. E., Kosina, H., & Selberherr, S. (2006). Orientation Dependence of the Low Field Mobility in Double- and Single-Gate SOI FETs. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 178–181). http://hdl.handle.net/20.500.12708/69231 ( reposiTUm)

Sverdlov, V., Kosina, H., Ringhofer, C., Nedjalkov, M., & Selberherr, S. (2006). Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator. In I. Lirkov, S. Margenov, & J. Waśniewski (Eds.), Large-Scale Scientific Computing (pp. 594–601). Springer Berlin Heidelberg. https://doi.org/10.1007/11666806_68 ( reposiTUm)

Gehring, A., Sverdlov, V., Kosina, H., & Selberherr, S. (2005). Quantum Transport in Ultra-Scaled Double-gate MOSFETs: A Wigner Function-based Monte Carlo Approach. In EUROSOI 2005 First Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (pp. 71–72). http://hdl.handle.net/20.500.12708/68452 ( reposiTUm)

Sverdlov, V. (2005). Shot noise suppression and enhancement in 2D Shot Noise Suppression and Enhancement at 2D Hopping and Single-Electron Arrays. In 4-th International Conference on Unsolved Problems of Noise and Fluctuations in Physics, Biology & High Technology (pp. 177–182). http://hdl.handle.net/20.500.12708/68498 ( reposiTUm)

Kosina, H., Sverdlov, V., Ringhofer, Ch., Nedjalkov, M., & Selberherr, S. (2005). Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator. In Abstracts of the 5th International Conference on Large-Scale Scientific Computations (pp. 36–37). http://hdl.handle.net/20.500.12708/68494 ( reposiTUm)

Sverdlov, V., Kosina, H., & Selberherr, S. (2005). Modeling Current Transport in Ultra-Scaled Field Effect Transistors. In Proceedings of the 2005 IEEE Conference on Electron Devices and Solid-State Circuits (pp. 385–390). http://hdl.handle.net/20.500.12708/68918 ( reposiTUm)

Sverdlov, V., Gehring, A., Kosina, H., & Selberherr, S. (2005). Tunneling and Intersubband Coupling in Ultra-Thin Body Double-Gate MOSFETs. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 93–96). http://hdl.handle.net/20.500.12708/68624 ( reposiTUm)

Beiträge in Büchern

Selberherr, S., & Sverdlov, V. (2023). Technology Computer-Aided Design: A Key Component of Microelectronics’ Development. In A. Nathan, S. K. Saha, & R. M. Todi (Eds.), 75th Anniversary of the Transistor (pp. 337–347). Wiley. https://doi.org/10.1002/9781394202478.ch28 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2022). Spin-Based Devices for Digital Applications. In M. Rudan, R. Brunetti, & S. Reggiani (Eds.), Springer Handbook of Semiconductor Devices (pp. 1123–1166). Springer International Publishing. https://doi.org/10.1007/978-3-030-79827-7_31 ( reposiTUm)

Fiorentini, S., Lacerda de Orio, R., Selberherr, S., Ender, J., Goes, W., & Sverdlov, V. (2020). Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM. In J. A. Martino, B.-Y. Nguyen, F. Gamiz, H. Ishii, J.-P. Raskin, S. Selberherr, & E. Simoen (Eds.), ECS Transactions (pp. 159–164). ECS Transactions. https://doi.org/10.1149/09705.0159ecst ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2018). Ultra-Fast Switching of a Free Magnetic Layer with Out-of-Plane Magnetization in Spin-Orbit Torque MRAM Cells. In J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen, & A. Yoshino (Eds.), ECS Transactions (pp. 213–218). ECS Transactions. https://doi.org/10.1149/08508.0213ecst ( reposiTUm)

Windbacher, T., Makarov, A., Sverdlov, V., & Selberherr, S. (2016). A Universal Nonvolatile Processing Environment. In S. Luryi, J. Xu, & A. Zaslavsky (Eds.), Future Trends in Microelectronics - Journey into the Unknown (pp. 83–91). John Wiley & Sons. http://hdl.handle.net/20.500.12708/29174 ( reposiTUm)

Gutierrez-D, E. A., Gamiz, F., Sverdlov, V., Selberherr, S., & Torres-J, A. (2016). Device physics, modeling, and technology for nano-scaled semiconductor devices. In E. A. Gutierrez-Dominguez (Ed.), Nano-Scaled Semiconductor Devices: Physics, Modelling, Characterisation, and Societal Impact (pp. 17–185). Institution of Engineering and Technology. https://doi.org/10.1049/pbcs027e_ch2 ( reposiTUm)

Sverdlov, V., Osintsev, D., & Selberherr, S. (2016). Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation. In J. J. Liou, S.-K. Liaw, & Y.-H. Chung (Eds.), Nano Devices and Sensors (pp. 29–48). De Gruyter. https://doi.org/10.1515/9781501501531-003 ( reposiTUm)

Osintsev, D., Sverdlov, V., & Selberherr, S. (2016). Electron Momentum and Spin Relaxation in Silicon Films. In G. Russo, V. Capasso, G. Nicosia, & V. Romano (Eds.), Mathematics in Industry (pp. 695–700). Springer International Publishing. https://doi.org/10.1007/978-3-319-23413-7_96 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2015). Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer. In S. Cristoloveanu & M. Shur (Eds.), Frontiers in Electronics. World Scientific Publishing Co. https://doi.org/10.1142/9789814656917_0001 ( reposiTUm)

Mahmoudi, H., Windbacher, T., Sverdlov, V., & Selberherr, S. (2015). Stateful STT-MRAM-Based Logic for Beyond–Von Neumann Computing. In T. Brozek & K. Iniewski (Eds.), Micro- and Nanoelectronics: Emerging Device Challenges and Solutions (pp. 221–250). CRC Press. https://doi.org/10.1201/b17597-11 ( reposiTUm)

Windbacher, T., Makarov, A., Sverdlov, V., & Selberherr, S. (2015). Novel Buffered Magnetic Logic Gate Grid. In F. Roozeboom, V. Narayanan, K. Kakushima, P. J. Timans, E. P. Gusev, Z. Karim, & S. DeGendt (Eds.), ECS Transactions (pp. 295–303). ECS Transactions. https://doi.org/10.1149/06604.0295ecst ( reposiTUm)

Sverdlov, V., & Selberherr, S. (2015). (Invited) Spin-Based Silicon and CMOS-Compatible Devices. In Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, & B.-Y. Nguyen (Eds.), ECS Transactions (pp. 223–231). ECS Transactions. https://doi.org/10.1149/06605.0223ecst ( reposiTUm)

Ghosh, J., Osintsev, D., Sverdlov, V., & Selberherr, S. (2015). Variation of Spin Lifetime with Spin Injection Orientation in Strained Thin Silicon Films. In Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, & B.-Y. Nguyen (Eds.), ECS Transactions (pp. 233–240). ECS Transactions. https://doi.org/10.1149/06605.0233ecst ( reposiTUm)

Sverdlov, V., Ghosh, J., Osintsev, D., & Selberherr, S. (2014). Modeling Silicon Spintronics. In Y. B. Senichenkov, V. Korablev, I. Chernorytski, N. Korovkin, S. Pozdnjkov, & K. Ntalianis (Eds.), Recent Advances in Mathematical Methods in Applied Sciences (pp. 195–198). Mathematics and Computers in Science and Engineering Series | 32. http://hdl.handle.net/20.500.12708/28370 ( reposiTUm)

Osintsev, D., Sverdlov, V., & Selberherr, S. (2014). Uniaxial Shear Strain as a Mechanism to Increase Spin Lifetime in Thin Film of a SOI-Based Silicon Spin FETs. In A. Nazarov, F. Balestra, V. Kilchytska, & D. Flandre (Eds.), Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting (pp. 127–149). Springer International Publishing. https://doi.org/10.1007/978-3-319-08804-4_7 ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2013). Magnetic Tunnel Junctions with a Composite Free Layer: A New Concept for Future Universal Memory. In S. Luryi, J. Xu, & A. Zaslavsky (Eds.), Future Trends in Microelectronics - Frontiers and Innovations (pp. 93–101). John Wiley & Sons. http://hdl.handle.net/20.500.12708/27934 ( reposiTUm)

Osintsev, D., Sverdlov, V., & Selberherr, S. (2013). Spin Lifetime Enhancement by Shear Strain in Thin Silicon-On-Insulator Films. In Y. Omura, F. Gamiz, B.-Y. Nguyen, H. Ishii, J. A. Martino, S. Selberherr, & J.-P. Raskin (Eds.), ECS Transactions (pp. 203–208). ECS Transactions. https://doi.org/10.1149/05305.0203ecst ( reposiTUm)

Makarov, A., Sverdlov, V., & Selberherr, S. (2011). Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations. In I. Dimov, S. Dimova, & N. T. Kolkovska (Eds.), Numerical Methods and Applications (pp. 87–94). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-642-18466-6_9 ( reposiTUm)

Windbacher, T., Sverdlov, V., & Selberherr, S. (2011). Classical Device Modeling. In D. Vasileska & S. M. Goodnick (Eds.), Nano-Electronic Devices (pp. 1–96). Springer New York. https://doi.org/10.1007/978-1-4419-8840-9_1 ( reposiTUm)

Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Weinbub, J., & Selberherr, S. (2011). Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors. In Y. Omura, H. Ishii, B.-Y. Nguyen, S. Selberherr, F. Gamiz, J. A. Martino, & J.-P. Raskin (Eds.), ECS Transactions (pp. 277–282). ECS Transactions. https://doi.org/10.1149/1.3570806 ( reposiTUm)

Windbacher, T., Sverdlov, V., & Selberherr, S. (2010). Biotin-Streptavidin Sensitive BioFETs and Their Properties. In A. Fred, J. Filipe, & H. Gamboa (Eds.), Biomedical Engineering Systems and Technologies (pp. 85–95). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-642-11721-3_6 ( reposiTUm)

Sverdlov, V., Baumgartner, O., Windbacher, T., & Selberherr, S. (2010). Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting. In S. Luryi, J. Xu, & A. Zaslavsky (Eds.), Future Trends in Microelectronics (pp. 281–291). John Wiley & Sons. http://hdl.handle.net/20.500.12708/27028 ( reposiTUm)

Sverdlov, V., Ungersboeck, E., & Kosina, H. (2007). Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions. In S. Hall, A. Nazarov, & V. Lysenko (Eds.), Nanoscaled Semiconductor-on-Insulator Structures and Devices (pp. 357–362). Springer Netherlands. https://doi.org/10.1007/978-1-4020-6380-0_23 ( reposiTUm)

Ungersboeck, E., Sverdlov, V., Kosina, H., & Selberherr, S. (2006). Modeling of Advanced Semiconductor Devices. In J. A. Diniz, P. French, N. Morimoto, J. W. Swart, & D. De Lima Monteiro (Eds.), ECS Transactions (pp. 207–216). ECS Transactions. https://doi.org/10.1149/1.2813493 ( reposiTUm)

Ungersboeck, E., Sverdlov, V., Kosina, H., & Selberherr, S. (2006). Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations. In D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, & S. Zaima (Eds.), ECS Transactions (pp. 45–54). ECS Transactions. https://doi.org/10.1149/1.2355793 ( reposiTUm)

Sverdlov, V., Kinkhabwala, Y., Kaplan, D., Korotkov, A. N., Kosina, H., & Selberherr, S. (2005). Shot Noise Suppression and Enhancement at 2D Hopping and in Single-Electron Arrays. In Unsolved Problems of Noise and Fluctuations (pp. 177–182). American Institute of Physics. http://hdl.handle.net/20.500.12708/25001 ( reposiTUm)

Bücher

Sverdlov, V., & Choi, S. (Eds.). (2023). Magnetic and Spin Devices, Volume II (Vol. 2). MDPI. https://doi.org/10.3390/books978-3-0365-9891-8 ( reposiTUm)

Sverdlov, V., & Jutong, N. (Eds.). (2022). Magnetic and Spin Devices. MDPI. https://doi.org/10.3390/books978-3-0365-3841-9 ( reposiTUm)

Sverdlov, V., & Selberherr, S. (Eds.). (2017). Special Issue: Extended Papers Selected from EUROSOI-ULIS 2016. Solid-State Electronics, Elsevier. http://hdl.handle.net/20.500.12708/24231 ( reposiTUm)

Jonker, B., Porod, W., Sverdlov, V., Matsumoto, K., Selberherr, S., & Goodnick, S. M. (Eds.). (2016). Innovative Nanoscale Devices and Systems. Society for Micro- and Nanoelectronics. http://hdl.handle.net/20.500.12708/24211 ( reposiTUm)

Sverdlov, V., Jonker, B., Ishibashi, K., Goodnick, S. M., & Selberherr, S. (Eds.). (2014). Innovative Nanoscale Devices and Systems. Society for Micro- and Nanoelectronics. http://hdl.handle.net/20.500.12708/23884 ( reposiTUm)

Strain-Induced Effects in Advanced MOSFETs. (2011). In V. Sverdlov (Ed.), Computational Microelectronics. Springer-Verlag, Wien - New York. https://doi.org/10.1007/978-3-7091-0382-1 ( reposiTUm)

Tagungsbände

Gamiz, F., Sverdlov, V., Sampedro, C., & Donet, L. (Eds.). (2018). 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS Book of Abstracts. Universidad de Granada. http://hdl.handle.net/20.500.12708/24426 ( reposiTUm)

Sverdlov, V., Gamiz, F., Cristoloveanu, S., & Selberherr, S. (Eds.). (2016). 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS Book of Abstracts. Society for Micro- and Nanoelectronics. http://hdl.handle.net/20.500.12708/24123 ( reposiTUm)

Sverdlov, V., Cristoloveanu, S., Gamiz, F., & Selberherr, S. (Eds.). (2016). 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS. IEEE. http://hdl.handle.net/20.500.12708/24200 ( reposiTUm)

Präsentationen

Bendra, M., Lacerda de Orio, R., Selberherr, S., Wolfgang Goes, & Sverdlov, V. (2024, May 25). Influence of Interface Exchange Coupling in Multilayered Spintronic Structures [Conference Presentation]. 47th MIPRO ICT and Electronics Convention (MIPRO 2024), Opatija, Croatia. http://hdl.handle.net/20.500.12708/207487 ( reposiTUm)

Fiorentini, S., Lacerda de Orio, R., Ender, J., Selberherr, S., Bendra, M., Jorstad, N. P., Gös, W., & Sverdlov, V. (2023, January 21). Finite Element Method for MRAM Switching Simulations [Keynote Presentation]. International Conference on Mathematical Models, Computational Techniques in Science, and Engineering (MMCTSE), Athens, Greece. ( reposiTUm)

Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Jørstad, N. P., Pruckner, B., Selberherr, S., Wolfgang Goes, & Sverdlov, V. (2023, May 25). Back-Hopping in Ultra-Scaled MRAM Cells [Conference Presentation]. 46th MIPRO ICT and Electronics Convention (MIPRO), Opatija, Croatia. http://hdl.handle.net/20.500.12708/207485 ( reposiTUm)

Fiorentini, S., Bendra, M., Ender, J., Orio, R., Selberherr, S., Goes, W., & Sverdlov, V. (2021). Design Support for Ultra-Scaled MRAM Cells. In Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM. 2021 IEEE International Electron Devices Meeting (IEDM), San Francisco, United States of America (the). http://hdl.handle.net/20.500.12708/77685 ( reposiTUm)

Sverdlov, V. (2019). Magnetic Field Free Switching of a Perpendicular SOT MRAM Cell. LETI Innovation days: Advanced Simulation for Non-Volatile Memory Workshop, Grenoble, France. http://hdl.handle.net/20.500.12708/91195 ( reposiTUm)

Ender, J., Orio, R., Fiorentini, S., Goes, W., & Sverdlov, V. (2019). Large-Scale Finite Element Micromagnetics Simulations using Open Source Software. European Materials Research Society (EMRS), Strasbourg, France. http://hdl.handle.net/20.500.12708/91212 ( reposiTUm)

Fiorentini, S., Orio, R., Goes, W., Ender, J., & Sverdlov, V. (2019). Comprehensive Comparison of Switching Models for Perpendicular Spin Transfer Torque MRAM Cells. European Materials Research Society (EMRS), Strasbourg, France. http://hdl.handle.net/20.500.12708/91213 ( reposiTUm)

Sverdlov, V., Osintsev, D., & Selberherr, S. (2014). From Strained SOI MOSFET to Spin MOSFET with Strain: a Modeling Approach. Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada, Austria. http://hdl.handle.net/20.500.12708/90347 ( reposiTUm)

Kosina, H., & Sverdlov, V. (2007). Impact of Strain and Defects on CMOS Process and Device Performance. 15#^{th}Biannual Conference Insulating Films on Semiconductors (INFOS-2007), Glyfada Athens, Greece, EU. http://hdl.handle.net/20.500.12708/88738 ( reposiTUm)

Kinkhabwala, Y., Sverdlov, V., & Likharev, K. (2005). Quasi-continuous Charge Transfer via 2D Hopping. APS March Meeting, Los Angeles/USA, Austria. http://hdl.handle.net/20.500.12708/88283 ( reposiTUm)

Sverdlov, V., Kosina, H., Ringhofer, Ch., Nedjalkov, M., & Selberherr, S. (2004). Beyond the Golden Rule in Electron-Phonon Scattering: an Advanced Monte Carlo Algorithm. DFG Workshop on Multiscale Problems in Quantum Mechanics and Averaging Techniques, Garching, Austria. http://hdl.handle.net/20.500.12708/88148 ( reposiTUm)

Berichte

Ceric, H., Hehenberger, P. P., Milovanovic, G., Sverdlov, V., Vasicek, M., & Selberherr, S. (2009). VISTA Status Report June 2009. http://hdl.handle.net/20.500.12708/35720 ( reposiTUm)

Baumgartner, O., Gös, W., Nentchev, A., Stimpfl, F., Sverdlov, V., & Selberherr, S. (2007). VISTA Status Report December 2007. http://hdl.handle.net/20.500.12708/31399 ( reposiTUm)

Dhar, S., Li, L., Pourfath, M., Spevak, M., Sverdlov, V., & Selberherr, S. (2006). VISTA Status Report June 2006. http://hdl.handle.net/20.500.12708/31421 ( reposiTUm)

Hochschulschriften

Sverdlov, V. (2011). Strain-induced effects in advanced MOSFETs [Professorial Dissertation, Technische Universität Wien]. reposiTUm. http://hdl.handle.net/20.500.12708/159534 ( reposiTUm)