Wilhelmer, C., Waldhör, D., Cvitkovich, L., Milardovich, D., Waltl, M., & Grasser, T. (2024). Polaron formation in the hydrogenated amorphous silicon nitride Si₃N₄ : H. Physical Review B, 110(4), 1–12. https://doi.org/10.1103/PhysRevB.110.045201 ( reposiTUm)

Waltl, M., Stampfer, B., & Grasser, T. (2024). Extraction of Charge Trapping Kinetics of Defects From Single-Defect Measurements. IEEE Transactions on Device and Materials Reliability, 24(2), 168–173. https://doi.org/10.1109/TDMR.2024.3395907 ( reposiTUm)

Stampfer, P., Roger, F., Cvitkovich, L., Grasser, T., & Waltl, M. (2024). A DLTS Study on Deep Trench Processing-Induced Trap States in Silicon Photodiodes. IEEE Transactions on Device and Materials Reliability, 24(2), 161–167. https://doi.org/10.1109/TDMR.2024.3382396 ( reposiTUm)

Feil, M., Waschneck, K., Reisinger, H., Berens, J., Aichinger, T., Prigann, S., Pobegen, G., Salmen, P., Rescher, G., Waldhör, D., Vasilev, A., Gustin, W., Waltl, M., & Grasser, T. (2024). Gate Switching Instability in Silicon Carbide MOSFETs—Part I: Experimental. IEEE Transactions on Electron Devices, 71(7), 4210–4217. https://doi.org/10.1109/TED.2024.3397636 ( reposiTUm)

Grasser, T., Feil, M. W., Waschneck, K., Reisinger, H., Berens, J., Waldhör, D., Vasilev, A., Waltl, M., Aichinger, T., Bockstedte, M., Gustin, W., & Pobegen, G. (2024). Gate Switching Instability in Silicon Carbide MOSFETs—Part II: Modeling. IEEE Transactions on Electron Devices, 71(7), 4218–4226. https://doi.org/10.1109/TED.2024.3397629 ( reposiTUm)

Feil, M. W., Weger, M., Reisinger, H., Aichinger, T., Kabakow, A., Waldhör, D., Jakowetz, A. C., Prigann, S., Pobegen, G., Gustin, W., Waltl, M., Bockstedte, M., & Grasser, T. (2024). Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETs. Physical Review Applied, 22(2), Article 024075. https://doi.org/10.1103/PhysRevApplied.22.024075 ( reposiTUm)

Illarionov, Yu. Yu., Knobloch, T., Uzlu, B., Banshchikov, A., Ivanov, I. A., Sverdlov, V., Otto, M., Stoll, S. L., Vexler, M., Waltl, M., Wang, Z., Manna, B., Neumaier, D., Lemme, M., Sokolov, N. S., & Grasser, T. (2024). Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF₂ insulators. Npj 2D Materials and Applications, 8(1), 1–10. https://doi.org/10.1038/s41699-024-00461-0 ( reposiTUm)

Tselios, K., Knobloch, T., Waldhör, D., Stampfer, B., Ioannidis, E., Enichlmair, H., Minixhofer, R., Grasser, T., & Waltl, M. (2023). Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO₂ Transistors. IEEE Transactions on Device and Materials Reliability, 23(3), 355–362. https://doi.org/10.1109/TDMR.2023.3262141 ( reposiTUm)

Waltl, M., Schleich, C., Vasilev, A., Waldhör, D., Stampfer, B., & Grasser, T. (2023). Physical Modelling of Charge Trapping Effects in SiC MOSFETs. Materials Science Forum, 1090, 185–191. https://doi.org/10.4028/p-o083cb ( reposiTUm)

Hernandez, Y., Schleich, C., Stampfer, B., Grasser, T., & Waltl, M. (2023). Impact of Bias Temperature Instabilities on the Performance of Power Electronics Employing SiC MOSFETs. Materials Science Forum, 1092, 193–200. https://doi.org/10.4028/p-7c79an ( reposiTUm)

Stampfer, P., Stampfer, B., Grasser, T., & Waltl, M. (2023). Accurate Extraction of Minority Carrier Lifetimes—Part I: Transient Methods. IEEE Transactions on Electron Devices, 70(8), 4320–4325. https://doi.org/10.1109/TED.2023.3286798 ( reposiTUm)

Stampfer, P., Stampfer, B., Grasser, T., & Waltl, M. (2023). Accurate Extraction of Minority Carrier Lifetimes—Part II: Combined I–V C–V Methods. IEEE Transactions on Electron Devices, 70(8), 4326–4331. https://doi.org/10.1109/TED.2023.3286792 ( reposiTUm)

Stampfer, P., Roger, F., Grasser, T., & Waltl, M. (2023). Impact of Trap States at Deep Trench Sidewalls on the Responsivity of Island Photodiodes. IEEE Transactions on Electron Devices, 70(11), 5738–5744. https://doi.org/10.1109/TED.2023.3315225 ( reposiTUm)

Schleich, C., Feil, M. W., Waldhör, D., Vasilev, A., Grasser, T., & Waltl, M. (2023). Lifetime Projection of Bipolar Operation of SiC DMOSFET. Materials Science Forum, 1091, 73–77. https://doi.org/10.4028/p-9i494d ( reposiTUm)

Vasilev, A., Feil, M. W., Schleich, C., Stampfer, B., Rzepa, G., Pobegen, G., Grasser, T., & Waltl, M. (2023). Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations. Materials Science Forum, 1090, 119–126. https://doi.org/10.4028/p-k93y93 ( reposiTUm)

Schleich, C., Waldhör, D., Knobloch, T., Zhou, W., Stampfer, B., Michl, J. D., Waltl, M., & Grasser, T. (2022). Single- Versus Multi-Step Trap Assisted Tunneling Currents—Part I: Theory. IEEE Transactions on Electron Devices, 69(8), 4479–4485. https://doi.org/10.1109/TED.2022.3185966 ( reposiTUm)

Schleich, C., Waldhör, D., El-Sayed, A.-M. B., Tselios, K., Kaczer, B., Grasser, T., & Waltl, M. (2022). Single- Versus Multi-Step Trap Assisted Tunneling Currents—Part II: The Role of Polarons. IEEE Transactions on Electron Devices, 69(8), 4486–4493. https://doi.org/10.1109/TED.2022.3185965 ( reposiTUm)

Tselios, K., Michl, J. D., Knobloch, T., Enichlmair, H., Ioannidis, E. G., Minixhofer, R., Grasser, T., & Waltl, M. (2022). Evaluation of the impact of defects on threshold voltage drift employing SiO₂ pMOS transistors. Microelectronics Reliability, 138, 1–6. https://doi.org/10.1016/j.microrel.2022.114701 ( reposiTUm)

Ruch, B., Padovan, V., Pogany, D., Ostermaier, C., Butej, B., Koller, C., & Waltl, M. (2024). Influence of Hole Injection on Associated Recovery Phenomena in GaN-Based GITs Subjected to Hot Electron Trapping. In M. Waltl, F. F. Huemer, & M. Hofbauer (Eds.), 2024 Austrochip Workshop on Microelectronics (Austrochip) (pp. 1–4). https://doi.org/10.1109/Austrochip62761.2024.10716239 ( reposiTUm)

Waltl, M., Stampfer, B., & Grasser, T. (2024). Advanced Extraction of Trap Parameters from Single-Defect Measurements. In 2023 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–5). https://doi.org/10.1109/IIRW59383.2023.10477640 ( reposiTUm)

Grasser, T., Feil, M., Waschneck, K., Reisinger, H., Berens, J., Waldhör, D., Vasilev, A., Waltl, M., Aichinger, T., Bockstedte, M., Gustin, W., & Pobegen, G. (2024). A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. In 2024 IEEE International Reliability Physics Symposium (IRPS) (pp. 3B.1-1-3B.1-7). https://doi.org/10.1109/IRPS48228.2024.10529465 ( reposiTUm)

Loesener, M., Zinsler, T., Stampfer, B., Wimmer, F., Ioannidis, E., Monga, U., Pflanzl, W., Minixhofer, R., Grasser, T., & Waltl, M. (2024). Evaluation of the Robustness of the Defect-Centric Model for Defect Parameter Extraction from RTN Analysis. In M. Waltl, F. F. Huemer, & M. Hofbauer (Eds.), 2024 Austrochip Workshop on Microelectronics (Austrochip). IEEE. https://doi.org/10.1109/Austrochip62761.2024.10716231 ( reposiTUm)

Wilhelmer, C., Waldhör, D., Milardovich, D., Cvitkovich, L., Waltl, M., & Grasser, T. (2023). Intrinsic Electron Trapping in Amorphous Silicon Nitride (a-Si3N4:H). In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 149–152). IEEE. https://doi.org/10.23919/SISPAD57422.2023.10319493 ( reposiTUm)

Wilhelmer, C., Waldhör, D., Cvitkovich, L., Waltl, M., & Grasser, T. (2023). Ab initio investigations of electron and hole trapping processes of H induced defects in amorphous SiO₂. In The 14th International Conference on SiO₂, Dielectrics and Related Devices : Book of Abstracts (pp. 18–19). ( reposiTUm)

Bogner, C., Schlunder, C., Waltl, M., Reisinger, H., & Grasser, T. (2023). Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of Variability. In 2023 IEEE International Reliability Physics Symposium (IRPS) (pp. 1–7). IEEE. https://doi.org/10.1109/IRPS48203.2023.10117818 ( reposiTUm)

Tselios, K., Knobloch, T., Michl, J. D., Waldhör, D., Schleich, C., Ioannidis, E., Enichlmair, H., Minixhofer, R., Grasser, T., & Waltl, M. (2022). Impact of Single Defects on NBTI and PBTI Recovery in SiO₂ Transistors. In Proceedings 2022 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–5). https://doi.org/10.1109/IIRW56459.2022.10032748 ( reposiTUm)

Stampfer, P., Meinhardt, G., Grasser, T., & Waltl, M. (2022). Simulating and Modeling the Influence of Deep Trench Interface Recombination on Si Photodiodes. In 2022 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–5). https://doi.org/10.1109/IIRW56459.2022.10032736 ( reposiTUm)

Wilhelmer, C., Waldhör, D., Jech, M., El-Sayed, A.-M. B., Cvitkovich, L., Waltl, M., & Grasser, T. (2022). Metastability of Negatively Charged Hydroxyl-E’ Centers and their Potential Role in Positive Bias Temperature Instabilities. In ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC) (pp. 376–379). https://doi.org/10.1109/ESSDERC55479.2022.9947111 ( reposiTUm)

Wilhelmer, C., Milardovich, D., Waldhör, D., Cvitkovich, L., Waltl, M., & Grasser, T. (2023, May 30). Intrinsic Charge Trapping Sites in Amorphous Si₃N₄ [Conference Presentation]. European Materials Research Society (E-MRS) Spring Meeting 2023, Strasbourg, France. ( reposiTUm)

Wilhelmer, C., Milardovich, D., Waldhör, D., Cvitkovich, L., Waltl, M., & Grasser, T. (2023, May 29). Charged instrinsic defect states in amorphous Si3N4 [Conference Presentation]. European Materials Research Society (E-MRS) Spring Meeting 2023, Strasbourg, France. http://hdl.handle.net/20.500.12708/188962 ( reposiTUm)