Ghosh, R., Provias, A., Karl, A., Wilhelmer, C., Knobloch, T., Davoudi, M. R., Sattari Esfahlan, S., Waldhör, D., & Grasser, T. (2025). Theoretical insights into the impact of border and interface traps on hysteresis in monolayer MoS₂ FETs. Microelectronic Engineering, 299, Article 112333. https://doi.org/10.1016/j.mee.2025.112333 ( reposiTUm)

Franckel, M. L. D., Turiansky, M. E., Waldhör, D., & Van De Walle, C. G. (2024). First-principles study of proton migration in indium oxide. Physical Review B, 110(22), 1–6. https://doi.org/10.1103/PhysRevB.110.L220101 ( reposiTUm)

Knobloch, T., Selberherr, S., & Grasser, T. (2023). High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI Circuits. ECS Transactions, 111(1), 219–228. https://doi.org/10.1149/11101.0219ecst ( reposiTUm)

Ravichandran, H., Knobloch, T., Pannone, A., Karl, A., Stampfer, B., Waldhör, D., Zheng, Y., Sakib, N., Karim Sadaf, M., Pendurthi, R., Torsi, R., Robinson, J. A., Grasser, T., & Das, S. (2023). Observation of Rich Defect Dynamics in Monolayer MoS₂. ACS Nano, 17(15), 14449–14460. https://doi.org/10.1021/acsnano.2c12900 ( reposiTUm)

Mounir, A., Iniguez, B., Lime, F., Kloes, A., Knobloch, T., & Grasser, T. (2023). Compact I-V Model for back-gated and double-gated TMD FETs. Solid-State Electronics, 207, 1–5. https://doi.org/10.1016/j.sse.2023.108702 ( reposiTUm)

Waldhoer, D., Schleich, C., Michl, J. D., Grill, A., Claes, D., Karl, A., Knobloch, T., Rzepa, G., Franco, J., Kaczer, B., Waltl, M., & Grasser, T. (2023). Comphy v3.0—A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices. Microelectronics Reliability, 146, 1–15. https://doi.org/10.1016/j.microrel.2023.115004 ( reposiTUm)

Knobloch, T., Selberherr, S., & Grasser, T. (2023). High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI Circuits. In ECS Meeting Abstracts (pp. 1864–1864). ECS Transactions. https://doi.org/10.1149/MA2023-01331864mtgabs ( reposiTUm)

Knobloch, T., & Grasser, T. (2023). Gate Stack Design for Field-Effect Transistors Based on Two-Dimensional Materials. In ECS Meeting Abstracts (pp. 1319–1319). ECS Transactions. https://doi.org/10.1149/MA2023-01131319mtgabs ( reposiTUm)

Provias, A., Knobloch, T., Kitamura, A., O’Brien, K. P., Dorow, C. J., Waldhör, D., Stampfer, B., Penumatcha, A. V., Lee, S., Ramamurthy, R., Clendenning, S., Waltl, M., Avci, U., & Grasser, T. (2023). Reliability Assessment of Double-Gated Wafer-Scale MoS2 Field Effect Transistors through Hysteresis and Bias Temperature Instability Analyses. In 2023 International Electron Devices Meeting (IEDM) (pp. 1–4). https://doi.org/10.1109/IEDM45741.2023.10413755 ( reposiTUm)