Fuchsberger, A., Wind, L., Nazzari, D., Aberl, J., Prado Navarrete, E., Brehm, M., Hartmann, J.-M., Fournel, F., Vogl, L., Schweizer, P., Minor, A. M., Sistani, M., & Weber, W. M. (2025). Temperature-dependent electronic transport in reconfigurable transistors based on Ge on SOI and strained SOI platforms. Solid-State Electronics, 226, Article 109055. https://doi.org/10.1016/j.sse.2024.109055 ( reposiTUm)

Wind, L., Preiß, S., Nazzari, D., Aberl, J., Navarrete, E. P., Brehm, M., Vogl, L., Minor, A. M., Sistani, M., & Weber, W. M. (2025). Si/Ge₁₋ₓSnₓ/Si transistors with highly transparent Al contacts. Solid-State Electronics, 225, Article 109069. https://doi.org/10.1016/j.sse.2025.109069 ( reposiTUm)

Fuchsberger, A., Dobler, A., Wind, L., Kramer, A., Kulenkampff, J., Reuter, M., Nazzari, D., Galderisi, G., Prado Navarrete, E., Aberl, J., Brehm, M., Mikolajick, T., Trommer, J., Hofmann, K., Sistani, M., & Weber, W. M. (2025). Reconfigurable Ge transistors enabling adaptive differential amplifiers. IEEE Transactions on Electron Devices, 72(6), 2868–2873. https://doi.org/10.1109/TED.2025.3559912 ( reposiTUm)

Wind, L., Maierhofer, M., Fuchsberger, A., Sistani, M., & Weber, W. M. (2024). Realization of a complementary full adder based on reconfigurable transistors. IEEE Electron Device Letters, 45(4), 724–727. https://doi.org/10.1109/LED.2024.3368110 ( reposiTUm)

Wind, L., Behrle, R., den Hertog, M. I., Murphey, C. G. E., Cahoon, J. F., Sistani, M., & Weber, W. M. (2024). Nanoscale Reconfigurable Si Transistors: From Wires to Sheets and Unto Multi‐Wire Channels. Advanced Electronic Materials, 10(2), Article 2300483. https://doi.org/10.1002/aelm.202300483 ( reposiTUm)

Behrle, R., Murphey, C. G. E., Cahoon, J. F., Barth, S., den Hertog, M. I., Weber, W. M., & Sistani, M. (2024). Understanding the electronic transport of Al-Si and Al-Ge nanojunctions by exploiting temperature-dependent bias spectroscopy. ACS APPLIED MATERIALS & INTERFACES, 16(15), 19350–19358. https://doi.org/10.1021/acsami.3c18674 ( reposiTUm)

Fuchsberger, A., Wind, L., Nazzari, D., Kuhberger, L., Popp, D., Aberl, J., Prado Navarrete, E., Brehm, M., Vogl, L., Schweizer, P., Lellig, S., Maeder Xavier, Sistani, M., & Weber, W. M. (2024). A Runtime Reconfigurable Ge Field-Effect Transistor With Symmetric On-States. IEEE Journal of the Electron Devices Society, 12, 83–87. https://doi.org/10.1109/JEDS.2024.3350209 ( reposiTUm)

Behrle, R., Krause Vanessa, Seifner, M. S., Köstler, B., Dick, K. A., Wagner, M., Sistani, M., & Barth, S. (2023). Electrical and Structural Properties of Si₁−ₓGeₓ Nanowires Prepared from a Single-Source Precursor. Nanomaterials, 13(4), Article 627. https://doi.org/10.3390/nano13040627 ( reposiTUm)

Behrle, R., Den Hertog, M. I., Lugstein, A., Weber, W. M., & Sistani, M. (2023). Bias Spectroscopy of Negative Differential Resistance in Ge Nanowire Cascode Circuits. In ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC) (pp. 37–40). IEEE. https://doi.org/10.34726/5319 ( reposiTUm)

Behrle, R., Bažíková, M., Barth, S., Weber, W. M., & Sistani, M. (2023). Mapping Electronic Transport in Ge Nanowire SBFETs: From Tunneling to NDR. In 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC) (pp. 889–894). IEEE. https://doi.org/10.34726/5370 ( reposiTUm)