2010 International Electron Devices Meeting
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2010 International Electron Devices Meeting
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| Preview | Authors / Editors | Title | Type | Issue Date | |
|---|---|---|---|---|---|
| 1 | Franco, J. ; Kaczer, B. ; Eneman, G. ; Mitard, J. ; Stesmans, A. ; Afanas'ev, V. ; Kauerauf, T. ; Roussel, Ph.J. ; Toledano-Luque, M. ; Cho, M. ; Degraeve, R. ; Grasser, T. ; Ragnarsson, L.-A. ; Witters, L. ; Tseng, J. ; Takeoka, S. ; Wang, W.-E. ; Hoffmann, T.Y. ; Groeseneken, G. | 6&#x00C5; EOT Si<inf>0.45</inf>Ge<inf>0.55</inf> pMOSFET with optimized reliability (V<inf>DD</inf>=1V): Meeting the NBTI lifetime target at ultra-thin EOT | Konferenzbeitrag Inproceedings | 2010 | |
| 2 | Grasser, T. ; Kaczer, B. ; Goes, W. ; Reisinger, H. ; Aichinger, Th. ; Hehenberger, Ph. ; Wagner, P.-J. ; Schanovsky, F. ; Franco, J. ; Roussel, Ph. ; Nelhiebel, M. | Recent advances in understanding the bias temperature instability | Konferenzbeitrag Inproceedings | 2010 |