2010 IEEE International Integrated Reliability Workshop Final Report

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2010 IEEE International Integrated Reliability Workshop Final Report
 

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PreviewAuthor(s)TitleTypeIssue Date
1Reisinger, H. ; Grasser, Tibor ; Hofmann, K. ; Gustin, W. ; Schlünder, C. The impact of recovery on BTI reliability assessmentsKonferenzbeitrag Inproceedings2010
2Grasser, T. ; Aichinger, Th. ; Reisinger, H. ; Franco, J. ; Wagner, P.-J. ; Nelhiebel, M. ; Ortolland, C. ; Kaczer, B. On the ‘permanent’ component of NBTIKonferenzbeitrag Inproceedings2010
3Hehenberger, Ph. ; Reisinger, H. ; Grasser, T. Recovery of negative and positive bias temperature stress in pMOSFETsKonferenzbeitrag Inproceedings2010
4Bukhori, Muhammad Faiz ; Grasser, Tibor ; Kaczer, Ben ; Reisinger, Hans. ; Asenov, Asen ‘Atomistic’ simulation of RTS amplitudes due to single and multiple charged defect states and their interactionsKonferenzbeitrag Inproceedings2010