2010 IEEE International Integrated Reliability Workshop Final Report
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2010 IEEE International Integrated Reliability Workshop Final Report
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Preview | Authors / Editors | Title | Type | Issue Date | |
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1 | Bukhori, Muhammad Faiz ; Grasser, Tibor ; Kaczer, Ben ; Reisinger, Hans. ; Asenov, Asen | ‘Atomistic’ simulation of RTS amplitudes due to single and multiple charged defect states and their interactions | Konferenzbeitrag Inproceedings | 2010 | |
2 | Grasser, T. ; Aichinger, Th. ; Reisinger, H. ; Franco, J. ; Wagner, P.-J. ; Nelhiebel, M. ; Ortolland, C. ; Kaczer, B. | On the ‘permanent’ component of NBTI | Konferenzbeitrag Inproceedings | 2010 | |
3 | Hehenberger, Ph. ; Reisinger, H. ; Grasser, T. | Recovery of negative and positive bias temperature stress in pMOSFETs | Konferenzbeitrag Inproceedings | 2010 | |
4 | Reisinger, H. ; Grasser, Tibor ; Hofmann, K. ; Gustin, W. ; Schlünder, C. | The impact of recovery on BTI reliability assessments | Konferenzbeitrag Inproceedings | 2010 |