2011 International Reliability Physics Symposium
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2011 International Reliability Physics Symposium
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| Preview | Authors / Editors | Title | Type | Issue Date | |
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| 1 | Franco, J. ; Kaczer, B. ; Eneman, G. ; Roussel, Ph. J. ; Cho, M. ; Mitard, J. ; Witters, L. ; Hoffmann, T. Y. ; Groeseneken, G. ; Crupi, F. ; Grasser, T. | On the recoverable and permanent components of Hot Carrier and NBTI in Si pMOSFETs and their implications in Si<inf>0.45</inf>Ge<inf>0.55</inf> pMOSFETs | Konferenzbeitrag Inproceedings | 2011 |