2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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Preview | Authors / Editors | Title | Type | Issue Date | |
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1 | Sverdlov, Viktor ; Makarov, Alexander ; Windbacher, Thomas ; Selberherr, Siegfried | Magnetic field dependent tunneling magnetoresistance through a quantum well between ferromagnetic contacts | Konferenzbeitrag Inproceedings | 2016 | |
2 | Sadi, Toufik ; Towie, Ewan ; Nedjalkov, Mihail ; Riddet, Craig ; Alexander, Craig ; Wang, Liping ; Georgiev, Vihar ; Brown, Andrew ; Millar, Campbell ; Asenov, Asen | One-dimensional multi-subband Monte Carlo simulation of charge transport in Si nanowire transistors | Konferenzbeitrag Inproceedings | 2016 | |
3 | Simonka, Vito ; Hössinger, Andreas ; Weinbub, Josef ; Selberherr, Siegfried | Three-dimensional growth rate modeling and simulation of silicon carbide thermal oxidation | Konferenzbeitrag Inproceedings | 2016 | |
4 | Manstetten, Paul ; Filipovic, Lado ; Hössinger, Andreas ; Weinbub, Josef ; Selberherr, Siegfried | Using one-dimensional radiosity to model neutral flux in convex high aspect ratio structures | Konferenzbeitrag Inproceedings | 2016 |