Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)

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Author: Franco, J.

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		Preview	Author(s)	Title	Type	Issue Date
	1		Kaczer, Ben ; Amoroso, S. M. ; Hussin, Razaidi ; Asenov, A ; Franco, J. ; Weckx, P. ; Roussel, Ph. J. ; Rzepa, Gerhard ; Grasser, Tibor ; Horiguchi, N.	On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects	Konferenzbeitrag Inproceedings	2016