IEEE International Electron Devices Meeting (IEDM)

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Description

Event name
IEEE International Electron Devices Meeting (IEDM)
 
Event type
Event for scientific audience
 
Start date
11-12-1988
End date
14-12-1988
 
Location
San Francisco, CA, USA
Country
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

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Date Issued:  [2000 TO 2024]
Author:  Pogany, Dionyz

Results 1-6 of 6 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Koller, Christian ; Pobegen, G. ; Ostermaier, C ; Pogany, Dionyz Evidence of defect band in carbon-doped GaN controlling leakage current and trapping dynamicsKonferenzbeitrag Inproceedings2017
2Shrivastava, Mayank ; Bychikhin, Sergey ; Pogany, Dionyz ; Schneider, Jens ; Baghini, Shojaei ; Gossner, Harald ; Gornik, Erich ; Ramgopal Rao, V Filament study of STI type drain extended NMOS device using transient interferometric mappingKonferenzbeitrag Inproceedings2009
3Kohn, Erhard ; Alomari, M ; Denisenko, A ; Dipalo, M ; Maier, D ; Medjdoub, F ; Pietzka, C ; Delage, S.L. ; diForte-Poisson, M.-A. ; Morvan, Erwin ; Sarazin, N ; Jacquet, J.-C. ; Dua, C ; Carlin, Jean-François ; Grandjean, Nicolas ; Py, M.A. ; Gonschorek, Marcus ; Kuzmik, Jan ; Pogany, Dionyz ; Pozzovivo, Gianmauro ; Ostermaier, Clemens ; Toth, L. ; Pecz, B ; Gaquière, Christophe ; Cico, Karol ; Fröhlich, Karol ; Georgakilas, A ; Iliopoulos, E ; Konstantinidis, G. ; Giessen, C ; Heuken, M ; Schineller, B InAlN/GaN Heterostructures for Microwave Power and BeyondKonferenzbeitrag Inproceedings2009
4Reiner, Maria ; Lagger, Peter Willibald ; Prechtl, G. ; Steinschifter, Patrick ; Pietschnig, R ; Pogany, Dionyz ; Ostermaier, Clemens Modification of "Native" Surface Donor States in AlGaN/GaN MIS-HEMTs by Fluorination: Perspective for Defect EngineeringKonferenzbeitrag Inproceedings2015
5Pogany, Dionyz ; Johnsson, David ; Bychikhin, Sergey ; Esmark, Kai ; Rodin, Pavel ; Gornik, Erich ; Stecher, Matthias ; Gossner, Harald Nonlinear dynamics approach in modeling of the on-state-spreading - related voltage and current transients in 90nm CMOS silicon controlled rectifiersKonferenzbeitrag Inproceedings2009
6Lagger, Peter Willibald ; Ostermaier, C ; Pobegen, G. ; Pogany, Dionyz Toward understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTsKonferenzbeitrag Inproceedings2012