IEEE International Electron Devices Meeting (IEDM)

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Description

Event name
IEEE International Electron Devices Meeting (IEDM)
 
Event type
Event for scientific audience
 
Start date
11-12-1988
End date
14-12-1988
 
Location
San Francisco, CA, USA
Country
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

Filter:
Author:  Groeseneken, G.
Author:  Grasser, T.
Author:  Horiguchi, N.

Results 1-2 of 2 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Franco, J. ; Wu, Z. ; Rzepa, G. ; Vandooren, A. ; Arimura, H. ; Ragnarsson, L. -A ; Hellings, G. ; Brus, S. ; Cott, D. ; De Heyn, V. ; Groeseneken, G. ; Horiguchi, N. ; Ryckaert, J. ; Collaert, N. ; Linten, D. ; Grasser, T. ; Kaczer, B. BTI Reliability Improvement Strategies in Low Thermal Budget Gate Stacks for 3D Sequential IntegrationKonferenzbeitrag Inproceedings 2018
2Franco, J. ; Kaczer, B. ; Eneman, G. ; Roussel, Ph.J. ; Grasser, T. ; Mitard, J. ; Ragnarsson, L.-A. ; Cho, M. ; Witters, L. ; Chiarella, T. ; Togo, M. ; Wang, W.-E ; Hikavyy, A. ; Loo, R. ; Horiguchi, N. ; Groeseneken, G. Superior NBTI reliability of SiGe channel pMOSFETs: Replacement gate, FinFETs, and impact of Body BiasKonferenzbeitrag Inproceedings2011