IEEE International Electron Devices Meeting (IEDM)

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Description

Event name
IEEE International Electron Devices Meeting (IEDM)
 
Event type
Event for scientific audience
 
Start date
11-12-1988
End date
14-12-1988
 
Location
San Francisco, CA, USA
Country
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

Filter:
Author:  Franco, J.
Author:  Groeseneken, G.
Author:  Sioncke, S.

Results 1-3 of 3 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Franco, J. ; Putcha, V. ; Vais, A. ; Sioncke, S. ; Waldron, N. ; Zhou, D. ; Rzepa, G. ; Roussel, Ph. J. ; Groeseneken, G. ; Heyns, M. ; Collaert, N. ; Linten, D. ; Grasser, T. ; Kaczer, B. Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs (invited)Konferenzbeitrag Inproceedings 2017
2Franco, J. ; Kaczer, B. ; Waldron, N. ; Roussel, Ph.J. ; Alian, A. ; Pourghaderi, M. A. ; Ji, Z. ; Grasser, T. ; Kauerauf, T. ; Sioncke, S. ; Collaert, N. ; Thean, A. ; Groeseneken, G. RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETsKonferenzbeitrag Inproceedings2014
3Franco, J. ; Kaczer, B. ; Roussel, Ph. J. ; Mitard, J. ; Sioncke, S. ; Witters, L. ; Mertens, H. ; Grasser, T. ; Groeseneken, G. Understanding the suppressed charge trapping in relaxed- and strained-Ge/SiO<inf>2</inf>/HfO<inf>2</inf> pMOSFETs and implications for the screening of alternative high-mobility substrate/dielectric CMOS gate stacksKonferenzbeitrag Inproceedings2013