International Scientific and Applied Science Conference (ET)

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International Scientific and Applied Science Conference (ET)
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PreviewAuthor(s)TitleTypeIssue Date
1Vainshtein, Sergey ; Yuferev, Valentin ; Kostamovaara, Juha ; Palankovski, Vassil Collapsing Field Domains in Avalanche GaAs Transistors: Peculiar Phenomenon and Prospective ApplicationsKonferenzbeitrag Inproceedings2010
2Vitanov, Stanislav ; Palankovski, Vassil Electron Mobility Models for III-NitridesKonferenzbeitrag Inproceedings2010
3Vitanov, Stanislav ; Palankovski, Vassil Influence of the Gate Recess on the Performance of Enhancement-Mode AlGaN/GaN HEMTsKonferenzbeitrag Inproceedings2009
4Dhar, Siddhartha ; Ungersböck, Stephan Enzo ; Nedjalkov, Mihail ; Palankovski, Vassil Monte Carlo Simulation of the Electron Mobility in Strained SiliconKonferenzbeitrag Inproceedings2006
5Vitanov, Stanislav ; Palankovski, Vassil Simulation of AlGaN/GaN HEMTs with InGaN Cap LayerKonferenzbeitrag Inproceedings2008
6Palankovski, Vassil ; Hristov, Marin ; Philippov, Philipp Two-Dimensional Physical AC-Simulation of GaAs HBTsKonferenzbeitrag Inproceedings2006