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| | Preview | Author(s) | Title | Type | Issue Date |
| 1 | | Fiorentini, S. ; de Orio, R. L. ; Selberherr, S. ; Ender, J. ; Goes, W. ; Sverdlov, V. | Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM | Artikel Article  | 2020 |
| 2 |  | Jeon, Dae-Young ; Park, So Jeong ; Pregl, Sebastian ; Trommer, Jens ; Heinzig, André ; Mikolajick, Thomas ; Weber, Walter M. | Channel Length Dependence of Effective Barrier Height Experienced by Charge Carriers in Schottky-Barrier Transistors Based on Si-Nanowire Arrays | Article Artikel   | 4-Mar-2025 |
| 3 | | Fuchsberger, Andreas ; Knaller, Nikolas ; Nazzari, Daniele ; Marböck, Jacqueline ; Prado Navarrete, Enrique ; Brehm, Moritz ; Pacheco-Sanchez, Aníbal ; Vogl, Lilian ; Schweizer, Peter ; Weber, Walter M. ; Sistani, Masiar | A Cryogenic Ultra-Thin Body SiGeSn Transistor | Article Artikel | 23-Dec-2025 |
| 4 | | Ender, Johannes ; Fiorentini, Simone ; De Orio, Roberto L. ; Goes, Wolfgang ; Sverdlov, Viktor ; Selberherr, Siegfried | Emerging CMOS Compatible Magnetic Memories and Logic | Artikel Article | 2021 |
| 5 | | Oliva, Nicolo ; Illarionov, Yury Yu ; Casu, Emanuele A. ; Cavalieri, Matteo ; Knobloch, Theresia ; Grasser, Tibor ; Ionescu, Adrian M. | Hysteresis Dynamics in Double-Gated n-Type WSe₂ FETs With High-k Top Gate Dielectric | Artikel Article | 2019 |
| 6 | | Trommer, Jens ; Simon, Maik ; Slesazeck, Stefan ; Weber, Walter M. ; Mikolajick, Thomas | Inherent Charge-Sharing-Free Dynamic Logic Gates Employing Transistors With Multiple Independent Inputs | Artikel Article | 2020 |
| 7 | | Filipovic, Lado ; Selberherr, Siegfried | Microstructure and Granularity Effects in Electromigration | Artikel Article | 2021 |
| 8 | | de Orio, R. L. ; Ender, J. ; Fiorentini, S. ; Goes, W. ; Selberherr, S. ; Sverdlov, V. | Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell | Artikel Article | 2021 |
| 9 | | Knobloch, Theresia ; Rzepa, Gerhard ; Illarionov, Yury ; Waltl, Michael ; Schanovski, F. ; Stampfer, Bernhard ; Furchi, Marco Mercurio ; Müller, Thomas ; Grasser, Tibor | A Physical Model for the Hysteresis in MoS2 Transistors | Artikel Article | 2018 |
| 10 | | Roemer, Christian ; Darbandy, Ghader ; Schwarz, Mike ; Trommer, Jens ; Heinzig, André ; Mikolajick, Thomas ; Weber, Walter Michael ; Iniguez, Benjamin ; Kloes, Alexander | Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors | Article Artikel | 1-Jan-2022 |
| 11 | | Fuchsberger, Andreas ; Wind, Lukas ; Nazzari, Daniele ; Dobler, Alexandra ; Aberl, Johannes ; Prado Navarrete, Enrique ; Brehm, Moritz ; Vogl, Lilian ; Schweizer, Peter ; Lellig, Sebastian ; Maeder, Xavier ; Sistani, Masiar ; Weber, Walter Michael | A reconfigurable Ge transistor functionally diversified by negative differential resistance | Article Artikel | 2024 |
| 12 |  | Fuchsberger, Andreas ; Wind, Lukas ; Nazzari, Daniele ; Kuhberger, Larissa ; Popp, Daniel ; Aberl, Johannes ; Prado Navarrete, Enrique ; Brehm, Moritz ; Vogl, Lilian ; Schweizer, Peter ; Lellig, Sebastian ; Maeder Xavier ; Sistani, Masiar ; Weber, Walter M. | A Runtime Reconfigurable Ge Field-Effect Transistor With Symmetric On-States | Article Artikel | 1-Jan-2024 |
