IEEE Transactions on Electron Devices

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Journal description

Title Titel
IEEE Transactions on Electron Devices
 
e-ISSN
1557-9646
 
ISSN
0018-9383
 
Publisher Herausgeber
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Publisher's Address Herausgeber Adresse
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

Filter:
Author:  Grasser, Tibor
Date Issued:  [2000 TO 2009]

Results 1-4 of 4 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Aichinger, T. ; Nelhiebel, M. ; Grasser, Tibor A Combined Study of p- and n-Channel MOS Devices to Investigate the Energetic Distribution of Oxide Traps After NBTIArtikel Article2009
2Grasser, Tibor ; Kaczer, Ben Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETsArtikel Article2009
3Jungemann, C. ; Grasser, Tibor ; Neinhüs, Burkhard ; Meinerzhagen, Bernd Failure of Moments-Based Transport Models in Nanoscale Devices Near EquilibriumArtikel Article2005
4Dhar, Siddhartha ; Kosina, Hans ; Karlowatz, Gerhard ; Ungersboeck, Stephan Enzo ; Grasser, Tibor ; Selberherr, Siegfried High-Field Electron Mobility Model for Strained-Silicon DevicesArtikel Article2006