IEEE Transactions on Electron Devices

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Journal description

Title Titel
IEEE Transactions on Electron Devices
 
e-ISSN
1557-9646
 
ISSN
0018-9383
 
Publisher Herausgeber
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Publisher's Address Herausgeber Adresse
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

Filter:
Date Issued:  [2000 TO 2024]
Author:  Pourfath, Mahdi
Date Issued:  [2010 TO 2019]
Date Issued:  2014

Results 1-3 of 3 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Ghobadi, Nayereh ; Pourfath, Mahdi A Comparative Study of Tunneling FETs Based on Graphene and GNR HeterostructuresArtikel Article2014
2Djavid, Nima ; Khaliji, Kaveh ; Tabatabaei, Seyed Mohammad ; Pourfath, Mahdi A Computational Study on the Electronic Transport Properties of Ultra-Narrow Disordered Zigzag Graphene NanoribbonsArtikel Article2014
3Gholipour, M. ; Masoumi, N. ; Chen, Y. C. ; Chen, D. ; Pourfath, Mahdi Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power DesignArtikel Article 2014