IEEE Transactions on Electron Devices

View Statistics Email Alert RSS Feed

Journal description

Title Titel
IEEE Transactions on Electron Devices
 
e-ISSN
1557-9646
 
ISSN
0018-9383
 
Publisher Herausgeber
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Publisher's Address Herausgeber Adresse
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

Filter:
Date Issued:  [2000 TO 2024]
Author:  Pourfath, Mahdi
Author:  Fathipour, Morteza

Results 1-5 of 5 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Yazdanpanah, Arash ; Pourfath, Mahdi ; Fathipour, Morteza ; Kosina, Hans ; Selberherr, Siegfried A Numerical Study of Line-Edge Roughness Scattering in Graphene NanoribbonsArtikel Article2012
2Goharrizi, Arash Yazdanpanah ; Pourfath, Mahdi ; Fathipour, Morteza ; Kosina, Hans ; Selberherr, Siegfried An Analytical Model for Line-Edge Roughness Limited Mobility of Graphene NanoribbonsArtikel Article2011
3Yazdanpanah Goharrizi, Arash ; Pourfath, Mahdi ; Fathipour, Morteza ; Kosina, Hans Device Performance of Graphene Nanoribbon Field-Effect Transistors in the Presence of Line-Edge RoughnessArtikel Article2012
4Moradinasab, Mahdi ; Pourfath, Mahdi ; Fathipour, Morteza ; Kosina, Hans Numerical Study of Graphene Superlattice-Based PhotodetectorsArtikel Article 2015
5Khaliji, Kaveh ; Noei, Maziar ; Tabatabaei, Seyed Mohammad ; Pourfath, Mahdi ; Fathipour, Morteza ; Abdi, Yaser Tunable Bandgap in Bilayer Armchair Graphene Nanoribbons: Concurrent Influence of Electric Field and Uniaxial StrainArtikel Article2013