IEEE Transactions on Electron Devices

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Journal description

Title Titel
IEEE Transactions on Electron Devices
 
e-ISSN
1557-9646
 
ISSN
0018-9383
 
Publisher Herausgeber
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Publisher's Address Herausgeber Adresse
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

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Author:  Reisinger, H.

Results 1-4 of 4 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Giering, K.-U. ; Puschkarsky, K. ; Reisinger, H. ; Rzepa, G. ; Rott, G. ; Vollertsen, R. ; Grasser, T. ; Jancke, R. NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level ModelingArtikel Article 2019
2Feil, M. W. ; Puschkarsky, K. ; Gustin, W. ; Reisinger, H. ; Grasser, T. On the Physical Meaning of Single-Value Activation Energies for BTI in Si and SiC MOSFET DevicesArtikel Article 2021
3Grasser, Tibor ; Kaczer, Ben ; Gös, Wolfgang ; Reisinger, H. ; Aichinger, T. ; Hehenberger, Philipp Paul ; Wagner, Paul-Jürgen ; Schanovsky, Franz ; Franco, J. ; Toledano-Luque, M. ; Nelhiebel, M. The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide TrapsArtikel Article 2011
4Puschkarsky, K. ; Grasser, T. ; Aichinger, T. ; Gustin, W. ; Reisinger, H. Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage InstabilityArtikel Article 2019