IEEE Transactions on Nanotechnology

Title Titel
IEEE Transactions on Nanotechnology
 
e-ISSN
1941-0085
 
ISSN
1536-125X
 
Publisher Herausgeber
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Publisher's Address Herausgeber Adresse
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

Results 1-12 of 12 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Brinciotti, Enrico ; Badino, Giorgio ; Knaipp, Martin ; Gramse, Georg ; Smoliner, Juergen ; Kienberger, Ferry Calibrated Nanoscale Dopant Profiling and Capacitance of a High-Voltage Lateral MOS Transistor at 20 GHz Using Scanning Microwave MicroscopyArtikel Article 2017
2Jehn, Zoltan ; Feiginov, Michael Demonstration of Sub-THz Traveling-Wave Resonant-Tunneling-Diode OscillatorsArticle Artikel 9-Feb-2023
3Dhar, Siddhartha ; Ungersböck, Stephan Enzo ; Kosina, Hans ; Grasser, Tibor ; Selberherr, Siegfried Electron Mobility Model for 〈110〉 Stressed Silicon Including Strain-Dependent MassArtikel Article 15-Jan-2007
4Brinciotti, Enrico ; Campagnaro, Giulio ; Badino, Giorgio ; Kasper, M ; Gramse, G ; Tuca, Silviu-Sorin ; Smoliner, Jürgen ; Schweinböck, Thomas ; Hommel, Soeren ; Kienberger, Ferry Frequency Analysis of Dopant Profiling and Capacitance Spectroscopy Using Scanning Microwave MicroscopyArtikel Article 2017
5Navarro Quijada, Jorge ; Baldauf, Tim ; Rai, Shubham ; Heinzig, André ; Kumar, Akash ; Weber, Walter Michael ; Mikolajick, Thomas ; Trommer, Jens Germanium Nanowire Reconfigurable Transistor Model for Predictive Technology EvaluationArticle Artikel 2022
6Chen, Rui ; Gao, Weilu ; Wang, Xuan ; Aizin, Gregory R. ; Mikalopas, John ; Arikawa, Takashi ; Tanaka, Koichiro ; Eason, David B. ; Strasser, Gottfried ; Kono, Junichiro ; Bird, Jonathan P. High-Voltage Breakdown and the Gunn Effect in GaAs/AlGaAs NanoconstrictionsArtikel Article 2015
7Ahmed, S. ; Holland, K. D. ; Paydavosi, N. ; Rogers, C. M. S. ; Alam, A. U. ; Neophytou, N. ; Kienle, D. ; Vaidyanathan, M. Impact of Effective Mass on the Scaling Behavior of the fₜ and fₘₐₓ of III-V High-Electron-Mobility TransistorsArtikel Article2012
8Castro, L.C. ; John, D.L. ; Pulfrey, D.L. ; Pourfath, M. ; Gehring, A. ; Kosina, H. Method for predicting f/sub T/ for carbon nanotube FETsArtikel Article 7-Nov-2005
9Ungersboeck, E. ; Pourfath, M. ; Kosina, H. ; Gehring, A. ; Cheong, B.-H. ; Park, W.-J. ; Selberherr, S. Optimization of Single-Gate Carbon-Nanotube Field-Effect TransistorsArtikel Article 2005
10Baumgartner, Oskar ; Sverdlov, Viktor ; Windbacher, Thomas ; Selberherr, Siegfried Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Thin FilmsArtikel Article2011
11Sverdlov, Viktor ; Ungersboeck, Stephan Enzo ; Kosina, Hans Theoretical Electron Mobility Analysis in Thin-Body FETs: Dependence on Substrate Orientation and Biaxial StrainArtikel Article2007
12Dow, Ali B. Alamin ; Lin, H. ; Schneider, M. ; Petkov, C. ; Bittner, A. ; Ahmed, A. ; Popov, C. ; Schmid, U. ; Kherani, N. P. Ultrananocrystalline Diamond-Based High-Velocity SAW Device Fabricated by Electron Beam LithographyArtikel Article2012