Japanese Journal of Applied Physics

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Journal description

Title Titel
Japanese Journal of Applied Physics
 
e-ISSN
1347-4065
 
ISSN
0021-4922
 
Publisher Herausgeber
IOP PUBLISHING LTD
 

Publications Publikationen

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Subject:  General Physics and Astronomy
Date Issued:  [2010 TO 2019]
Subject:  General Engineering
Author:  Pogany, Dionyz

Results 1-3 of 3 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Kuzmik, Jan ; Vitanov, Stanislav ; Dua, Christian ; Carlin, Jean-Francois ; Ostermaier, Clemens ; Alexewicz, Alexander ; Strasser, Gottfried ; Pogany, Dionyz ; Gornik, Erich ; Grandjean, Nicolas ; Delage, Sylvain ; Palankovski, Vassil Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility TransistorsArtikel Article2012
2Ostermaier, Clemens ; Pozzovivo, Gianmauro ; Basnar, Bernhard ; Schrenk, Werner ; Carlin, Jean-François ; Gonschorek, Marcus ; Grandjean, Nicolas ; Vincze, Andrej ; Tóth, Lajos ; Pécz, Bela ; Strasser, Gottfried ; Pogany, Dionyz ; Kuzmik, Jan Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6Artikel Article2010
3Meneghini, Matteo ; Zanandrea, Alberto ; Rampazzo, Fabiana ; Stocco, Antonio ; Bertin, Marco ; Cibin, Giulia ; Pogany, Dionyz ; Zanoni, Enrico ; Meneghesso, Gaudenzio Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown ConditionsArtikel Article2013