Metastable nanoscale solid solutions and their integration


Project Acronym Projekt Kurzbezeichnung
HyperGe
 
Project Title (de) Projekttitel (de)
Metastable nanoscale solid solutions and their integration
 
Project Title (en) Projekttitel (en)
Metastable nanoscale solid solutions and their integration
 
Consortium Coordinator Koordinator des Konsortiums
 
Principal Investigator Projektleiter_in
 
Funder/Funding Agency Fördergeber
FWF - Österr. Wissenschaftsfonds
Grant number Förderkennnummer
I 5383-N
 

Publications

Results 1-15 of 15 (Search time: 0.005 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Fuchsberger-2025-Advanced Materials Technologies-vor.pdf.jpgFuchsberger, Andreas ; Sistani, Masiar ; Eysin, Kilian ; Weber, Walter M. Negative Differential Transconductance Induced by Electrostatic Doping in Multi‐Functional Si Field‐Effect TransistorsArticle Artikel 22-Jan-2026
2Fuchsberger-2026-IEEE Journal of the Electron Devices Society-vor.pdf.jpgFuchsberger, Andreas ; Knaller, Nikolas ; Nazzari, Daniele ; Marböck, Jacqueline ; Prado Navarrete, Enrique ; Brehm, Moritz ; Pacheco-Sanchez, Aníbal ; Vogl, Lilian ; Schweizer, Peter ; Weber, Walter M. ; Sistani, Masiar A Cryogenic Ultra-Thin Body SiGeSn TransistorArticle Artikel 2026
3Fuchsberger, Andreas ; Wind, Lukas ; Pacheco-Sanchez, Aníbal ; Aberl, Johannes ; Brehm, Moritz ; Vogl, Lilian ; Schweizer, Peter ; Sistani, Masiar ; Weber, Walter M. A Schottky barrier field-effect transistor platform with variable Ge content on SOIArticle Artikel Dec-2025
4Fuchsberger-2025-IEEE Electron Device Letters-vor.pdf.jpgFuchsberger, Andreas ; Eysin, Kilian ; Wind, Lukas ; Prado Navarrete, Enrique ; Aberl, Johannes ; Brehm, Moritz ; Ratschinski, Ingmar ; Hiller, Daniel ; Sistani, Masiar ; Weber, Walter M. Modulation-acceptor-doped SiGe Schottky barrier field-effect transistorsArticle Artikel Aug-2025
5Fuchsberger-2025-IEEE Transactions on Electron Devices-vor.pdf.jpgFuchsberger, Andreas ; Dobler, Alexandra ; Wind, Lukas ; Kramer, Andreas ; Kulenkampff, Julian ; Reuter, Maximilian ; Nazzari, Daniele ; Galderisi, Giulio ; Prado Navarrete, Enrique ; Aberl, Johannes ; Brehm, Moritz ; Mikolajick, Thomas ; Trommer, Jens ; Hofmann, Klaus ; Sistani, Masiar ; Weber, Walter M. Reconfigurable Ge transistors enabling adaptive differential amplifiersArticle Artikel 6-Jun-2025
6Fuchsberger-2025-Solid-State Electronics-vor.pdf.jpgFuchsberger, Andreas ; Wind, Lukas ; Nazzari, Daniele ; Aberl, Johannes ; Prado Navarrete, Enrique ; Brehm, Moritz ; Hartmann, Jean-Michel ; Fournel, Frank ; Vogl, Lilian ; Schweizer, Peter ; Minor, Andrew M. ; Sistani, Masiar ; Weber, Walter Michael Temperature-dependent electronic transport in reconfigurable transistors based on Ge on SOI and strained SOI platformsArticle Artikel Jun-2025
7Fuchsberger, A. ; Verdianu, A. ; Wind, L. ; Nazzari, D. ; Prado Navarrete, Enrique ; Wilfingseder, C ; Aberl, J. ; Brehm, M. ; Hartmann, J-M. ; Sistani, M. ; Weber, W. M. Electrostatic gating in Ge-based reconfigurable field-effect transistorsArticle Artikel Apr-2025
8Wind-2025-Solid-State Electronics-vor.pdf.jpgWind, Lukas ; Preiß, Stefan ; Nazzari, Daniele ; Aberl, Johannes ; Navarrete, Enrique Prado ; Brehm, Moritz ; Vogl, Lilian ; Minor, Andrew M. ; Sistani, Masiar ; Weber, Walter M. Si/Ge₁₋ₓSnₓ/Si transistors with highly transparent Al contactsArticle Artikel Apr-2025
9Behrle, Raphael ; Murphey, Corban G. E. ; Cahoon, James F. ; Barth, Sven ; den Hertog, Martien I ; Weber, Walter M. ; Sistani, Masiar Understanding the electronic transport of Al-Si and Al-Ge nanojunctions by exploiting temperature-dependent bias spectroscopyArticle Artikel 17-Apr-2024
10Wind-2024-IEEE Electron Device Letters-vor.pdf.jpgWind, Lukas ; Maierhofer, Moritz ; Fuchsberger, Andreas ; Sistani, Masiar ; Weber, Walter M. Realization of a complementary full adder based on reconfigurable transistorsArticle Artikel Apr-2024
11Wind-2024-Advanced Electronic Materials-vor.pdf.jpgWind, Lukas ; Behrle, Raphael ; den Hertog, Martien I. ; Murphey, Corban G. E. ; Cahoon, James F. ; Sistani, Masiar ; Weber, Walter Michael Nanoscale Reconfigurable Si Transistors: From Wires to Sheets and Unto Multi‐Wire ChannelsArticle Artikel 9-Feb-2024
12Fuchsberger-2024-IEEE Journal of the Electron Devices Society-vor.pdf.jpgFuchsberger, Andreas ; Wind, Lukas ; Nazzari, Daniele ; Kuhberger, Larissa ; Popp, Daniel ; Aberl, Johannes ; Prado Navarrete, Enrique ; Brehm, Moritz ; Vogl, Lilian ; Schweizer, Peter ; Lellig, Sebastian ; Maeder Xavier ; Sistani, Masiar ; Weber, Walter M. A Runtime Reconfigurable Ge Field-Effect Transistor With Symmetric On-StatesArticle Artikel 1-Jan-2024
13Behrle-2023-Mapping Electronic Transport in Ge Nanowire SBFETs From Tunnel...-am.pdf.jpgBehrle, Raphael ; Bažíková, Martina ; Barth, Sven ; Weber, Walter M. ; Sistani, Masiar Mapping Electronic Transport in Ge Nanowire SBFETs: From Tunneling to NDRInproceedings Konferenzbeitrag Dec-2023
14Behrle-2023-Bias Spectroscopy of Negative Differential Resistance in Ge Na...-am.pdf.jpgBehrle, Raphael ; Den Hertog, Martien I. ; Lugstein, Alois ; Weber, Walter M. ; Sistani, Masiar Bias Spectroscopy of Negative Differential Resistance in Ge Nanowire Cascode CircuitsInproceedings Konferenzbeitrag Sep-2023
15Behrle-2023-Nanomaterials-vor.pdf.jpgBehrle, Raphael ; Krause Vanessa ; Seifner, Michael S. ; Köstler, Benedikt ; Dick, Kimberly A. ; Wagner, Matthias ; Sistani, Masiar ; Barth, Sven Electrical and Structural Properties of Si₁−ₓGeₓ Nanowires Prepared from a Single-Source PrecursorArticle Artikel 2-Feb-2023