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| | Preview | Author(s) | Title | Type | Issue Date |
| 1 |  | Fuchsberger, Andreas ; Sistani, Masiar ; Eysin, Kilian ; Weber, Walter M. | Negative Differential Transconductance Induced by Electrostatic Doping in Multi‐Functional Si Field‐Effect Transistors | Article Artikel    | 22-Jan-2026 |
| 2 | | Fuchsberger, Andreas ; Wind, Lukas ; Pacheco-Sanchez, Aníbal ; Aberl, Johannes ; Brehm, Moritz ; Vogl, Lilian ; Schweizer, Peter ; Sistani, Masiar ; Weber, Walter M. | A Schottky barrier field-effect transistor platform with variable Ge content on SOI | Article Artikel | Dec-2025 |
| 3 |  | Fuchsberger, Andreas ; Eysin, Kilian ; Wind, Lukas ; Prado Navarrete, Enrique ; Aberl, Johannes ; Brehm, Moritz ; Ratschinski, Ingmar ; Hiller, Daniel ; Sistani, Masiar ; Weber, Walter M. | Modulation-acceptor-doped SiGe Schottky barrier field-effect transistors | Article Artikel | Aug-2025 |
| 4 |  | Fuchsberger, Andreas ; Dobler, Alexandra ; Wind, Lukas ; Kramer, Andreas ; Kulenkampff, Julian ; Reuter, Maximilian ; Nazzari, Daniele ; Galderisi, Giulio ; Prado Navarrete, Enrique ; Aberl, Johannes ; Brehm, Moritz ; Mikolajick, Thomas ; Trommer, Jens ; Hofmann, Klaus ; Sistani, Masiar ; Weber, Walter M. | Reconfigurable Ge transistors enabling adaptive differential amplifiers | Article Artikel | 6-Jun-2025 |
| 5 |  | Fuchsberger, Andreas ; Wind, Lukas ; Nazzari, Daniele ; Aberl, Johannes ; Prado Navarrete, Enrique ; Brehm, Moritz ; Hartmann, Jean-Michel ; Fournel, Frank ; Vogl, Lilian ; Schweizer, Peter ; Minor, Andrew M. ; Sistani, Masiar ; Weber, Walter Michael | Temperature-dependent electronic transport in reconfigurable transistors based on Ge on SOI and strained SOI platforms | Article Artikel | Jun-2025 |
| 6 | | Fuchsberger, A. ; Verdianu, A. ; Wind, L. ; Nazzari, D. ; Prado Navarrete, Enrique ; Wilfingseder, C ; Aberl, J. ; Brehm, M. ; Hartmann, J-M. ; Sistani, M. ; Weber, W. M. | Electrostatic gating in Ge-based reconfigurable field-effect transistors | Article Artikel | Apr-2025 |
| 7 |  | Wind, Lukas ; Preiß, Stefan ; Nazzari, Daniele ; Aberl, Johannes ; Navarrete, Enrique Prado ; Brehm, Moritz ; Vogl, Lilian ; Minor, Andrew M. ; Sistani, Masiar ; Weber, Walter M. | Si/Ge₁₋ₓSnₓ/Si transistors with highly transparent Al contacts | Article Artikel | Apr-2025 |
| 8 | | Behrle, Raphael ; Murphey, Corban G. E. ; Cahoon, James F. ; Barth, Sven ; den Hertog, Martien I ; Weber, Walter M. ; Sistani, Masiar | Understanding the electronic transport of Al-Si and Al-Ge nanojunctions by exploiting temperature-dependent bias spectroscopy | Article Artikel | 17-Apr-2024 |
| 9 |  | Wind, Lukas ; Maierhofer, Moritz ; Fuchsberger, Andreas ; Sistani, Masiar ; Weber, Walter M. | Realization of a complementary full adder based on reconfigurable transistors | Article Artikel | Apr-2024 |
| 10 |  | Wind, Lukas ; Behrle, Raphael ; den Hertog, Martien I. ; Murphey, Corban G. E. ; Cahoon, James F. ; Sistani, Masiar ; Weber, Walter Michael | Nanoscale Reconfigurable Si Transistors: From Wires to Sheets and Unto Multi‐Wire Channels | Article Artikel | 9-Feb-2024 |
| 11 |  | Fuchsberger, Andreas ; Wind, Lukas ; Nazzari, Daniele ; Kuhberger, Larissa ; Popp, Daniel ; Aberl, Johannes ; Prado Navarrete, Enrique ; Brehm, Moritz ; Vogl, Lilian ; Schweizer, Peter ; Lellig, Sebastian ; Maeder Xavier ; Sistani, Masiar ; Weber, Walter M. | A Runtime Reconfigurable Ge Field-Effect Transistor With Symmetric On-States | Article Artikel | 1-Jan-2024 |
| 12 |  | Behrle, Raphael ; Bažíková, Martina ; Barth, Sven ; Weber, Walter M. ; Sistani, Masiar | Mapping Electronic Transport in Ge Nanowire SBFETs: From Tunneling to NDR | Inproceedings Konferenzbeitrag | Dec-2023 |
| 13 |  | Behrle, Raphael ; Den Hertog, Martien I. ; Lugstein, Alois ; Weber, Walter M. ; Sistani, Masiar | Bias Spectroscopy of Negative Differential Resistance in Ge Nanowire Cascode Circuits | Inproceedings Konferenzbeitrag | Sep-2023 |
| 14 |  | Behrle, Raphael ; Krause Vanessa ; Seifner, Michael S. ; Köstler, Benedikt ; Dick, Kimberly A. ; Wagner, Matthias ; Sistani, Masiar ; Barth, Sven | Electrical and Structural Properties of Si₁−ₓGeₓ Nanowires Prepared from a Single-Source Precursor | Article Artikel | 2-Feb-2023 |
