Kosina, Hans

Network Lab View Statistics Email Alert RSS Feed

Name Card

Full name Familienname, Vorname
Kosina, Hans
 
Main Affiliation Organisations­zuordnung
 

Own Publications Eigene Publikationen

Results 221-240 of 444 (Search time: 0.011 seconds).

PreviewAuthor(s)TitleTypeIssue Date
221Neophytou, Neophytos ; Kosina, Hans Large Enhancement in Hole Velocity and Mobility in p-type [110] and [111] Silicon Nanowires by Cross Section Scaling: An Atomistic AnalysisArtikel Article2010
222Milovanovic, G. ; Kosina, H. A Semiclassical Transport Model for Quantum Cascade Lasers based on the Pauli Master EquationArtikel Article 2010
223Nedjalkov, M. ; Kosina, H. ; Schwaha, P. Device Modeling in the Wigner PictureArtikel Article 2010
224Stanojevic, Z. ; Baumgartner, O. ; Sverdlov, V. ; Kosina, H. Electronic band structure modeling in strained Si-nanowires: Two band k · p versus tight bindingKonferenzbeitrag Inproceedings2010
225Stanojevic, Zlatan ; Baumgartner, Oskar ; Sverdlov, Viktor ; Kosina, Hans Subband Structure of Silicon Nanowires from the Hensel-Hasegawa-Nakayama ModelKonferenzbeitrag Inproceedings2010
226Milovanovic, G. ; Kosina, H. Nonparabolicity Effects in Quantum Cascade LasersKonferenzbeitrag Inproceedings2009
227Sverdlov, Viktor ; Baumgartner, Oskar ; Kosina, Hans ; Selberherr, Siegfried ; Schanovsky, Franz ; Esseni, David The Linear Combination of Bulk Bands-Method for Electron and Hole Subband Calculations in Strained Silicon Films and Surface LayersKonferenzbeitrag Inproceedings2009
228Baumgartner, Oskar ; Karner, Markus ; Sverdlov, Viktor ; Kosina, Hans Numerical Quadrature of the Subband Distribution Functions in Strained Silicon UTB DevicesKonferenzbeitrag Inproceedings2009
229Neophytou, Neophytos ; Kosina, Hans ; Rakshit, Titash Quantum Transport Simulations of InGaAs HEMTs: Influence of Mass Variations on the Device PerformanceKonferenzbeitrag Inproceedings2009
230Baumgartner, Oskar ; Karner, Markus ; Sverdlov, Viktor ; Kosina, Hans Numerical Study of the Electron Subband Structure in Strained Silicon UTB DevicesKonferenzbeitrag Inproceedings2009
231Kosina, Hans Transport Modeling for Nanowires and NanotubesKonferenzbeitrag Inproceedings2009
232Pourfath, Mahdi ; Kosina, Hans ; Selberherr, Siegfried Theoretical Study of Graphene Nanoribbon Photo-DetectorsKonferenzbeitrag Inproceedings2009
233Pourfath, Mahdi ; Baumgartner, Oskar ; Kosina, Hans ; Selberherr, Siegfried Performance Evaluation of Graphene Nanoribbon Infrared PhotodetectorsKonferenzbeitrag Inproceedings2009
234Milovanovic, Goran ; Baumgartner, Oskar ; Kosina, Hans Simulation of Quantum Cascade Lasers using Robin Boundary ConditionsKonferenzbeitrag Inproceedings2009
235Sverdlov, Viktor ; Vasicek, Martin ; Cervenka, Johann ; Grasser, Tibor ; Kosina, Hans ; Selberherr, Siegfried Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments ModelsKonferenzbeitrag Inproceedings2009
236Milovanovic, G. ; Baumgartner, O. ; Kosina, H. On Open Boundary Conditions for Quantum Cascade StructuresArtikel Article2009
237Pourfath, Mahdi ; Kosina, Hans Computational Study of Carbon-Based ElectronicsArtikel Article 2009
238Kosina, Hans ; Selberherr, Siegfried Guest EditorialArtikel Article2009
239Neophytou, Neophytos ; Kosina, Hans ; Selberherr, Siegfried ; Klimeck, Gerhard Dependence of Injection Velocity and Capacitance of Si Nanowires on Diameter, Orientation, and Gate Bias: An Atomistic Tight-Binding StudyKonferenzbeitrag Inproceedings2009
240Neophytou, Neophytos ; Wagner, M ; Kosina, Hans ; Selberherr, Siegfried Analysis of Thermoelectric Properties of Scaled Silicon Nanostructures using an Atomistic Thight-Binding ModelKonferenzbeitrag Inproceedings2009