Name Card

Full name Familienname, Vorname
Triendl, Fabian
 
Main Affiliation Organisations­zuordnung
 

Own Publications Eigene Publikationen

Results 1-14 of 14 (Search time: 0.005 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Triendl, F ; Pfusterschmied, G ; Schwarz, S ; Pobegen, G ; Konrath, J P ; Schmid, U Barrier height tuning by inverse sputter etching at poly-Si/4H-SiC heterojunction diodesArtikel Article 2021
2Pfusterschmied, G. ; Triendl, F. ; Schneider, M. ; Schmid, U. Impact of Ar+ bombardment of 4H-SiC substrates on Schottky diode barrier heightsArtikel Article 2021
3Triendl, Fabian ; Pfusterschmied, Georg ; Berger, Claudio ; Schwarz, Sabine ; Artner, Werner ; Schmid, Ulrich Ti/4H-SiC schottky barrier modulation by ultrathin a-SiC:H interface layerArtikel Article 2021
4Triendl, F. ; Pfusterschmied, G. ; Pobegen, G. ; Schwarz, S. ; Artner, W. ; Konrath, J.P. ; Schmid, U. Growth and characterization of low pressure chemical vapor deposited Si on Si-face 4H-SiCArtikel Article 2021
5Triendl, F. ; Pfusterschmied, G. ; Schwarz, S. ; Artner, W. ; Schmid, U. Si/4H-SiC heterostructure formation using metal-induced crystallizationArtikel Article 2021
6Triendl Fabian - 2021 - Microstructural and electrical characterization of...pdf.jpgTriendl, Fabian Microstructural and electrical characterization of Si/4H-SiC heterojunction diodesThesis Hochschulschrift 2021
7Triendl, F. ; Pfusterschmied, G. ; Fleckl, G. ; Schwarz, S. ; Schmid, U. On the crystallization behavior of sputter-deposited a-Si films on 4H-SiCArtikel Article 2020
8Triendl, F ; Pfusterschmied, G ; Pobegen, G ; Konrath, J P ; Schmid, U Theoretical and experimental investigations of barrier height inhomogeneities in poly-Si/4H-SiC heterojunction diodesArtikel Article 2020
9Schmid, P. ; Triendl, F. ; Zarfl, C. ; Schwarz, S. ; Artner, W. ; Schneider, M. ; Schmid, U. Influence of the AlN/Pt-ratio on the electro-mechanical properties ofmultilayered AlN/Pt thin film strain gauges at high temperaturesArtikel Article 2020
10Triendl, F. ; Pfusterschmied, G. ; Zellner, C. ; Artner, W. ; Hradil, K. ; Schmid, U. Low-temperature epitaxial Si on 4H-SiC using metal-induced crystallizationArtikel Article 2020
11Triendl, Fabian ; Fleckl, Gernot ; Schneider, Michael ; Pfusterschmied, Georg ; Schmid, Ulrich Evaluation of interface trap characterization methods in 4H-SiC metal oxide semiconductor structures over a wide temperature rangeArtikel Article 2019
12Schmid, P. ; Triendl, F. ; Zarfl, C. ; Schwarz, S. ; Artner, W. ; Schneider, M. ; Schmid, U. Electro-mechanical Properties of Multilayered Aluminum Nitride and Platinum Thin Films at High TemperaturesArtikel Article 2019
13Schmid, P. ; Zarfl, C. ; Triendl, F. ; Maier, F.J. ; Schwarz, S. ; Schneider, M. ; Schmid, U. Impact of adhesion promoters and sputter parameters on theelectro-mechanical properties of Pt thin films at high temperaturesArtikel Article 2018
14Triendl Fabian - 2018 - Interface trap and mobile charge density in dry oxidized...pdf.jpgTriendl, Fabian Interface trap and mobile charge density in dry oxidized 4H-SiC MOS structures in a wide temperature rangeThesis Hochschulschrift 2018