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| | Preview | Authors / Editors | Title | Type | Issue Date |
| 1 | | Berens, Judith ; Pobegen, Gregor ; Rescher, Gerald ; Aichinger, Thomas ; Grasser, Tibor | NH₃ and NO + NH₃ Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability | Artikel Article | 2019 |
| 2 | | Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor | Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device Preconditioning | Artikel Article | 2018 |
| 3 | | Puschkarsky, Katja ; Reisinger, Hans ; Aichinger, Thomas ; Gustin, Wolfgang ; Grasser, Tibor | Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation | Artikel Article | 2018 |
| 4 | | Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor | Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement Technique | Artikel Article | 2018 |
| 5 | | Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor | Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique | Artikel Article | 2017 |
| 6 | | Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor | On the subthreshold drain current sweep hysteresis of 4H-SiC nMOSFETs | Konferenzbeitrag Inproceedings | 2016 |
| 7 | | Pobegen, Gregor ; Aichinger, Thomas ; Salinaro, Alberto ; Grasser, Tibor | Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs | Artikel Article | 2014 |
| 8 | | Gasser, Christoph ; Aichinger, Thomas ; Ofner, Johannes ; Lendl, Bernhard | Stand-off Spatially Offset Raman spectroscopy: towards 3D stand-off imaging | Konferenzbeitrag Inproceedings | 2014 |
| 9 | | Gasser, Christoph ; Aichinger, Thomas ; Ofner, Johannes ; Lendl, Bernhard | Stand-off Spatially Offset Raman spectroscopy | Konferenzbeitrag Inproceedings | 2014 |
| 10 | | Aichinger, Thomas ; Nelhiebel, Michael ; Grasser, Tibor | Refined NBTI Characterization of Arbitrarily Stressed PMOS Devices at Ultra-low and Unique Temperatures | Artikel Article | 2013 |
| 11 | | Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor ; Nelhiebel, Michael | Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETs | Artikel Article | 2011 |
| 12 | | Pobegen, Gregor ; Aichinger, Thomas ; Nelhiebel, Michael ; Grasser, Tibor | Understanding temperature acceleration for NBTI | Konferenzbeitrag Inproceedings | 2011 |
| 13 |  | Aichinger, Thomas | On the role of hydrogen in silicon device degradation and metalization processing | Thesis Hochschulschrift   | 2010 |
