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		Preview	Author(s)	Title	Type	Issue Date
	1		Smith, N. ; Berens, J. ; Pobegen, G. ; Grasser, Tibor ; Shluger, A.	Al–O–Al defect complexes as possible candidates for channel electron mobility reducing trapping centers in 4H-SiC metal–oxide–semiconductor field-effect transistors	Article Artikel	28-Aug-2024
	2		Grasser, Tibor ; Feil, Maximilian ; Waschneck, Katja ; Reisinger, Hans ; Berens, Judith ; Waldhör, Dominic ; Vasilev, Alexander ; Waltl, Michael ; Aichinger, Thomas ; Bockstedte, Michel ; Gustin, Wolfgang ; Pobegen, Gregor	A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs	Inproceedings Konferenzbeitrag	2024