Name Card

Full name Familienname, Vorname
Otto, Gustav
 
Main Affiliation Organisations­zuordnung
 

Own Publications Eigene Publikationen

Results 1-10 of 10 (Search time: 0.006 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Pongratz, Peter ; Otto, Gustav ; Hobler, Gerhard ; Palmetshofer, L. Analysis of Experimental TEM Image Contrast of Amorphous Pockets using Molecular Dynamics Computer Simulations aof Collision Cascades in SiliconPräsentation Presentation2007
2Otto, Gustav ; Hobler, Gerhard ; Palmetshofer, L. ; Pongratz, Peter Amorphous pockets in Si: Comparison of coupled molecular dynamics and TEM image contrast simulations with experimental resultsArtikel Article2007
3Otto, Gustav ; Hobler, Gerhard ; Palmetshofer, L. ; Pongratz, Peter Verification of MD Results on Amorphous Pockets in Si using TEM Image Contrast SimulationsPräsentation Presentation2006
4Otto, Gustav ; Hobler, Gerhard ; Palmetshofer, L. ; Pongratz, Peter Comparison of TEM image contrast simulations of amorphous pockets in Si as obtained by molecular dynamics simulations with experimental resultsPräsentation Presentation2006
5Otto, Gustav ; Hobler, Gerhard ; Palmetshofer, L. ; Mayerhofer, Karl Emanuel ; Piplits, Kurt ; Hutter, Herbert Dose-rate dependence of damage formation in Si by N implantation as determined from channeling profile measurementsArtikel Article2006
6Zahel, Thomas ; Otto, Gustav ; Hobler, Gerhard Atomistic Simulation of Hydrogen Implantation for SOI Wafer ProductionKonferenzbeitrag Inproceedings2005
7Zahel, Thomas ; Otto, Gustav ; Hobler, Gerhard Atomistic simulation of the isotope effect on defect formation in H/D-implanted SiKonferenzbeitrag Inproceedings2005
8Otto Gustav - 2005 - Multi-method simulations and transmission electron...pdf.jpgOtto, Gustav Multi-method simulations and transmission electron microscope investigations of ion implantation damage in siliconThesis Hochschulschrift 2005
9Hobler, Gerhard ; Otto, Gustav Detailed modeling of ion implantation damage in silicon using a binary collision approach with information from molecular dynamics simulationsPräsentation Presentation2002
10Otto, Gustav ; Hobler, Gerhard ; Gärtner, K. Defect characterization of 10-200 eV recoil events in silicon using classical molecular dynamcsPräsentation Presentation2002