Name Card

Full name Familienname, Vorname
Osintsev, D.
 

Own Publications Eigene Publikationen

Results 1-11 of 11 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Osintsev, D. ; Sverdlov, V. ; Selberherr, S. Electron Momentum and Spin Relaxation in Silicon FilmsBuchbeitrag Book Contribution 2016
2Ghosh, J. ; Osintsev, D. ; Sverdlov, V. ; Selberherr, S. Dependence of spin lifetime on spin injection orientation in strained silicon filmsKonferenzbeitrag Inproceedings2015
3Ghosh, J. ; Osintsev, D. ; Sverdlov, V. ; Selberherr, S. Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI StructuresArtikel Article 2015
4Sverdlov, V. ; Ghosh, J. ; Mahmoudi, H. ; Makarov, A. ; Osintsev, D. ; Windbacher, T. ; Selberherr, S. Modeling spin-based electronic devicesKonferenzbeitrag Inproceedings2014
5Osintsev, D. ; Sverdlov, V. ; Neophytou, N. ; Selberherr, S. Valley Splitting and Spin Lifetime Enhancement in in Strained Thin Silicon FilmsKonferenzbeitrag Inproceedings2014
6Osintsev, D. ; Sverdlov, V. ; Selberherr, S. Influence of the valley degeneracy on spin relaxation in thin silicon filmsKonferenzbeitrag Inproceedings 2013
7Osintsev, D. ; Sverdlov, V. ; Selberherr, S. Reduction of momentum and spin relaxation rate in strained thin silicon filmsKonferenzbeitrag Inproceedings 2013
8Osintsev, D. ; Makarov, A. ; Sverdlov, V. ; Selberherr, S. Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon FinsKonferenzbeitrag Inproceedings2012
9Osintsev, D. ; Sverdlov, V. ; Stanojević, Z. ; Makarov, A. ; Selberherr, S. Temperature Dependence of the Transport Properties of Spin Field-Effect Transistors Built with InAs and Si ChannelsArtikel Article2012
10Osintsev, D. ; Baumgartner, O. ; Stanojevic, Z. ; Sverdlov, V. ; Selberherr, S. Reduction of Surface Roughness Induced Spin Relaxation in SOI MOSFETsKonferenzbeitrag Inproceedings2012
11Osintsev, D. ; Sverdlov, V. ; Stanojevic, Z. ; Makarov, A. ; Selberherr, S. Transport properties of spin field-effect transistors built on Si and InAsKonferenzbeitrag Inproceedings2011